CN108098570A - Polishing assembly and its polishing process method - Google Patents

Abstract

The invention provides a polishing assembly and a polishing process method thereof, which relate to the field of semiconductor technology. In order to solve the problem that in the existing polishing process, the outer surface of the workpiece to be processed is also polished under the extrusion of the polishing liquid and the inner wall of the planetary wheel, It is designed to make the original appearance of the polished piece or the outer surface topography of the polished piece polished. It relates to a polishing assembly, which includes a polishing piece, and the outer surface of the polishing piece is covered with a protective layer. It also relates to a polishing process method, including the above-mentioned polishing component. The polishing component and its polishing process method will not change the size of the outer surface of the polished piece, so as to meet the requirement that the outer surface of the polished piece is not or less affected by polishing.

Description

Polishing component and polishing process method thereof

technical field

The invention relates to the technical field of semiconductors, in particular to a polishing component and a polishing process method thereof.

Background technique

Chemical mechanical polishing (CMP) technology is one of the key technologies for surface processing of semiconductor materials, and it is widely used in the surface polishing process of large-size bare wafers and silicon parts. The process of chemical mechanical polishing is mainly the process of removing materials from the surface of wafers or silicon parts through the action of polishing pads, polishing liquids and selected chemical reagents.

For a double polishing machine, if you want to process both sides of the semiconductor wafer and silicon parts at the same time, you must use a star wheel to fix the parts to be processed between the upper and lower disks of the polishing machine. Both the upper and lower disks are covered with polishing cloths. The upper surface of the polishing disk flows down, and the two disks exert pressure on the wafer to fix the wafer in the middle of the disk surface. The star wheel will rotate to drive the wafer to rotate between the disk surfaces. At the same time, the two large disks rotate in the same direction or in the opposite direction to achieve the purpose of polishing. .

However, in the polishing process of the double polishing machine, because the outer surface of the workpiece to be processed must rotate in the planetary wheel, as the polishing liquid flows down the surface of the workpiece, the outer surface of the workpiece to be processed is also in the polishing liquid and the planetary wheel. It is polished under the extrusion of the inner wall of the wheel, which is extremely unfavorable for the requirement of maintaining the original appearance of the polished piece or trying not to affect the outer surface morphology of the polished piece.

Contents of the invention

The first object of the present invention is to provide a polishing assembly to solve the problem in the prior art that in the existing polishing process, the outer surface of the workpiece to be processed is also polished under the extrusion of the polishing liquid and the inner wall of the planetary wheel , A technical problem that destroys the original appearance of the polished piece or the external surface morphology of the polished piece.

The polishing assembly provided by the present invention is used in the polishing process, comprising: a polishing piece, the outer surface of the polishing piece is covered with an adhesive film layer and a bearing film layer in turn, and the adhesive film layer and the bearing film layer Bonding and fixing, the adhesive film layer is bonded to the outer surface of the polishing piece.

A polishing process method for a polishing assembly as described above, comprising the following steps:

Step 1: bonding and fixing the adhesive film layer and the bearing film layer, and bonding the adhesive film layer to the outer surface of the polishing piece;

Step 2: removing the carrying film layer on the polishing piece, and curing the adhesive film layer;

Step 3: polishing the polishing piece in step 2, and removing the adhesive film layer in step 2 after polishing.

Further, in the second step, the adhesive film layer is cured by means of heating, UV irradiation or extrusion.

In the third step, after the polishing is completed, the glue film layer on the outer surface of the polishing piece is removed by calcining or wet removal.

The second object of the present invention is to provide a polishing assembly to solve the problem in the prior art that in the existing polishing process, the outer surface of the workpiece to be processed is also polished under the extrusion of the polishing liquid and the inner wall of the planetary wheel , A technical problem that destroys the original appearance of the polished piece or the external surface morphology of the polished piece.

The polishing assembly provided by the present invention is used in a polishing process, comprising: a polishing piece, the outer peripheral surface of which is coated with a deposited film layer.

A polishing process method for a polishing assembly as described above, comprising the following steps:

Step 1: Depositing a layer of the deposition film on the outer peripheral surface of the polishing piece;

Step 2: removing the deposited film layer at the surface to be polished of the polishing piece in step 1 to expose the surface to be polished;

Step 3: Polishing the polishing piece described in Step 2, and removing the deposited film layer in Step 2 after the polishing is completed.

Further, in the first step, the polished piece is deposited on its outer peripheral surface by any one of oxidation method, nitriding method, vapor deposition method, magnetron sputtering method and physical vapor deposition method. Deposited film layer.

In the second step, the deposited film layer is removed by vapor phase etching or liquid chemical etching on the surface to be polished, so that the surface to be polished is exposed.

Alternatively, the deposited film layer is removed by grinding or polishing on the surface to be polished, so that the surface to be polished is exposed.

In the third step, after the polishing is completed, the deposited film layer on the outer surface of the polishing piece is removed by means of wet etching or dry etching.

The third object of the present invention is to provide a polishing assembly to solve the problem in the prior art that in the existing polishing process, the outer surface of the workpiece to be processed is also polished under the extrusion of the polishing liquid and the inner wall of the planetary wheel , A technical problem that destroys the original appearance of the polished piece or the external surface morphology of the polished piece.

The polishing assembly provided by the present invention is used in the polishing process, comprising: a polishing piece, the outer surface or peripheral surface of the polishing piece is coated with a photoresist film layer.

A polishing process method for a polishing assembly as described above, comprising the following steps:

Step 1: Coating a layer of the photoresist film on the outer surface or peripheral surface of the polished piece;

Step 2: removing the photoresist film layer at the surface to be polished of the polishing piece in step 1 to expose the surface to be polished;

Step 3: curing the photoresist film layer on the outer surface of the polishing piece;

Step 4: Polishing the polishing piece in Step 3, and removing the photoresist film layer in Step 3 after polishing.

Further, in the first step, the polishing piece is coated with a layer of the photoresist film layer on its outer surface or peripheral surface by magnetron sputtering or pulling method.

When the outer peripheral surface of the polishing piece is coated with the photoresist film layer, in the second step, the polishing piece is developed or the photoresist film layer on the surface to be polished is cleaned with a chemical solution.

In the third step, the photoresist film layer in the step 2 is hard-baked to cure the photoresist film layer on the outer surface of the polishing piece.

In the fourth step, after the polishing is completed, the photoresist film layer on the outer surface of the polishing piece is removed by means of wet etching or dry etching.

Further, when the outer peripheral surface of the polishing piece is covered with the photoresist film layer, in the second step, the polishing piece is first exposed and then developed to remove the light on the surface to be polished. Resist film layer.

The beneficial effects of the polishing assembly provided by the invention and its polishing process method:

In the above-mentioned polishing assembly, since the outer peripheral surface or the outer side of the polishing piece is coated with a protective layer (the "protective layer" here refers to the above-mentioned adhesive film layer/carrier film layer, deposited film layer or optical Resist film layer) to protect the outer surface of the polished piece (the "outer side" here refers to the surface that does not need to be polished), so that when the polishing component is polished, the original appearance of the outer surface of the polished piece can not be directly compared with the original appearance of the polished piece. The contact with the star wheel plays a certain role in protecting the original appearance of the outer surface of the polished piece; after the polishing is completed, the protective layer on the outer surface of the polished piece is removed by other auxiliary methods, so that the original shape can be restored, and the outer surface of the polished piece can be restored. The dimensions of the side surfaces do not change in any way, so that the requirement that the outer surfaces of the polished piece are not or less affected by polishing is achieved.

Description of drawings

In order to more clearly illustrate the specific implementation of the present invention or the technical solutions in the prior art, the following will briefly introduce the accompanying drawings that need to be used in the specific implementation or description of the prior art. Obviously, the accompanying drawings in the following description The drawings show some implementations of the present invention, and those skilled in the art can obtain other drawings based on these drawings without creative work.

Figure 1 is a schematic diagram of the positional relationship between the planetary wheel and the polishing piece during polishing;

Fig. 2 is the schematic structural view of the adhesive film layer and the carrying film layer in the first kind of polishing assembly provided by the present embodiment;

FIG. 3 is a schematic structural view of the first polishing assembly provided in this embodiment;

Fig. 4 is a schematic structural view of the first polishing assembly shown in Fig. 3 after the carrying film layer is removed;

FIG. 5 is a schematic structural view of the second polishing assembly provided in this embodiment, wherein the deposited film layer is deposited on the peripheral surface of the polishing piece;

Fig. 6 is a schematic structural view of the second polishing assembly shown in Fig. 5 after removing part of the deposited film layer to expose the polishing surface;

Fig. 7 is a schematic structural view of the second polishing assembly shown in Fig. 5 after polishing;

FIG. 8 is a schematic structural diagram of a third polishing assembly provided in this embodiment;

FIG. 9 is a schematic structural view of the cured photoresist film layer in the third polishing assembly shown in FIG. 8 .

Icons: 100-protective layer; 200-polished part; 300-planet wheel; 110-adhesive film layer; 120-carrying film layer; 130-deposited film layer; 140-photoresist film layer.

Detailed ways

The technical solutions of the present invention will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred mechanism or element must have a specific orientation, and must have a specific orientation. construction and operation, therefore, should not be construed as limiting the invention. In addition, the terms "first", "second", and "third" are used for descriptive purposes only, and should not be construed as indicating or implying relative importance.

In the description of the present invention, it should be noted that unless otherwise specified and limited, the terms "installation", "connection" and "connection" should be understood in a broad sense, for example, it can be a fixed connection or a detachable connection. Connected, or integrally connected; it can be mechanically connected or electrically connected; it can be directly connected or indirectly connected through an intermediary, and it can be the internal communication of two components. Those of ordinary skill in the art can understand the specific meanings of the above terms in the present invention in specific situations.

Example

As shown in Figure 1, the polishing piece 200 adopts a wafer or a silicon piece. When it is polished in the star wheel 300, the rotation of the star wheel 300 drives the wafer or silicon piece to move so that the upper and lower end faces are thrown up and down with the double throwing machine. The cloth acts to achieve the purpose of polishing.

As shown in FIG. 2 and FIG. 3 , this embodiment provides a polishing assembly used in a polishing process, including a polishing piece 200 , the outer surface or peripheral surface of the polishing piece 200 is coated with a protective layer 100 .

In some embodiments, the protective layer 100 may have various specific structural forms, and the following are introduced, but not limited to.

The first type of polishing component structure: the outer surface of the polishing piece 200 is covered with an adhesive film layer 110 and a carrier film layer 120 in sequence, the adhesive film layer 110 and the carrier film layer 120 are bonded and fixed, and the adhesive film layer 110 is bonded to the Polish the outer side of the piece 200.

In some embodiments, the material of the adhesive film layer 110 is any one of thermal curing material, UV curing material, and pressure sensitive curing material.

Wherein, the material of the carrying film layer 120 is any one of resin, metal, and organic fiber.

Wherein, the thickness range of the adhesive film layer 110 and the carrying film layer 120 is 100 nm˜10 mm.

This embodiment provides a polishing process method of the first polishing assembly as described above, including the following steps:

Step 1: bonding and fixing the adhesive film layer 110 and the carrier film layer 120, and bonding the adhesive film layer 110 on the outer surface of the polishing piece 200 (see FIG. 3 );

Step 2: remove the carrying film layer 120 on the polishing piece 200, and cure the adhesive film layer 110 (see FIG. 4);

Step 3: Polish the polishing piece 200 in step 2, and remove the adhesive film layer 110 in step 2 after polishing.

In some embodiments, in the second step, the adhesive film layer 110 is cured by heating, UV irradiation or pressing (see FIG. 4 ).

In the third step, after the polishing is completed, the glue film layer 110 on the outer surface of the polishing piece 200 is removed from the polishing piece 200 by calcination or wet removal.

The second structure of the polishing assembly: as shown in FIG. 5 and FIG. 6 , the outer peripheral surface of the polishing piece 200 is coated with a deposited film layer 130 .

In some embodiments, the deposition film layer 130 adopts any one of oxide film, nitride film, metal film, and organic film, or sprays a layer of deposition film layer on the outer peripheral surface of the polishing piece 200 by using nano-spray paint. 130.

Specifically, the outer peripheral surface of the polishing piece 200 is coated with the deposited film 130 by any one of oxidation method, nitriding method, vapor deposition method, magnetron sputtering method, and physical vapor deposition method.

Wherein, the thickness of the deposited film layer 130 ranges from 100 nm to 10 mm.

This embodiment provides a polishing process method of the second polishing assembly as described above, including the following steps:

Step 1: Deposit a deposition film layer 130 on the outer peripheral surface of the polishing piece 200 (see FIG. 5 );

Step 2: remove the deposited film layer 130 at the surface to be polished of the polishing piece 200 in step 1, exposing the surface to be polished (see FIG. 6 );

Step 3: Polish the polishing piece 200 in step 2, and remove the deposited film layer 130 in step 2 after polishing (see FIG. 7 ).

In some embodiments, in this step one, the polishing piece 200 deposits a layer on its outer peripheral surface by using any one of oxidation method, nitriding method, vapor deposition method, magnetron sputtering method, and physical vapor deposition method. A film layer 130 is deposited.

In the second step, the deposited film layer 130 is removed by vapor phase etching or liquid chemical etching, so that the deposited film layer 130 on the surface to be polished is exposed.

Alternatively, the deposited film layer 130 is removed by grinding or polishing on the surface to be polished, so that the surface to be polished is exposed.

In the third step, after polishing, the polishing piece 200 removes the deposited film layer 130 on the outer surface of the polishing piece 200 by means of wet etching or dry etching.

The third structure of the polishing assembly: as shown in FIG. 8 and FIG. 9 , the outer surface or peripheral surface of the polishing member 200 is covered with a photoresist film layer 140 .

Wherein, as shown in FIG. 8 and FIG. 9 , the outer surface of the polishing piece 200 is coated with a photoresist film layer 140 .

In some embodiments, the outer surface or peripheral surface of the polishing piece 200 is covered with the photoresist film layer 140 by using a magnetron sputtering method or a pulling method.

Wherein, the thickness of the photoresist film layer 140 ranges from 100 nm to 10 mm.

On the basis of the above embodiments, it should be noted that the polishing piece 200 may adopt a columnar structure, or the cross section of the polishing piece 200 may be a square or circular structure.

Taking the cylindrical structure of the polishing piece 200 as an example, the "outer side" mentioned above refers to the arc-shaped side of the cylindrical structure.

The "outer peripheral surface" mentioned above includes an arc-shaped side of the cylindrical structure and two end faces connected to the arc-shaped side.

This embodiment provides a polishing process method of the third polishing assembly as described above, including the following steps:

Step 1: Coating a photoresist film layer 140 on the outer surface or peripheral surface of the polishing piece 200 (see FIG. 8 );

Step 2: removing the photoresist film layer 140 at the surface to be polished of the polishing piece 200 in step 1, exposing the surface to be polished;

Step 3: curing the photoresist film layer 140 on the outer surface of the polishing piece 200 (see FIG. 9 );

Step 4: Polish the polishing piece 200 in step 3, and remove the photoresist film layer 140 in step 3 after polishing.

In some embodiments, in the first step, the polishing piece 200 is coated with a layer of photoresist film 140 on its outer surface or peripheral surface by magnetron sputtering or pulling method.

When the outer peripheral surface of the polishing piece 200 is coated with the photoresist film layer 140 , in the second step, the photoresist film layer 140 on the surface to be polished is cleaned on the polishing piece 200 by developing or chemical solution.

In the third step, the photoresist film layer 140 in the step 2 is hard-baked to cure the photoresist film layer 140 on the outer surface of the polishing piece 200;

In the fourth step, after the polishing is completed, the photoresist film layer 140 on the outer surface of the polishing piece 200 is removed from the polishing piece 200 by means of wet etching or dry etching.

Wherein, when the outer peripheral surface of the polishing piece 200 is coated with the photoresist film layer 140, in this step 2, the photoresist film layer on the surface to be polished can also be removed by first exposing the polishing piece 200 and then developing. 140.

In the above-mentioned polishing components and polishing process methods, no matter which method is used, it has the following effective effects:

Since the outer peripheral surface or outer side of the polishing piece 200 is coated with a protective layer 100 (the "protective layer" here refers to the above-mentioned adhesive film layer 110/carrier film layer 120, deposited film layer 130 or photoresist film layer 140) to protect the outer surface of the polishing piece 200 (the "outer side" here refers to the surface that does not need to be polished), so that the polishing assembly can make the original appearance of the outer surface of the polishing piece 200 not directly Contact with the planetary wheel 300 can protect the original appearance of the outer surface of the polished piece 200 to a certain extent; after the polishing is completed, the protective layer 100 on the outer surface of the polished piece 200 is removed by other auxiliary methods, so that the original appearance can be restored , the size of the outer surface of the polishing piece 200 will not change in any way, so as to meet the requirement that the outer surface of the polishing piece 200 is not or less affected by polishing.

Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present invention, rather than limiting them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: It is still possible to modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements for some or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the technical solutions of the various embodiments of the present invention. scope.

Claims (10)

1. a kind of polishing assembly, in glossing, which is characterized in that including：Polished part (200), the polished part (200) Lateral surface successively to being coated with adhesive film (110) and carrying film layer (120), the adhesive film (110) and the carrier film Layer (120) is adhesively fixed, and the adhesive film (110) is bonded in the lateral surface of the polished part (200).

2. a kind of polishing process method of polishing assembly as described in claim 1, which is characterized in that comprise the following steps：

Step 1：The adhesive film (110) and the carrying film layer (120) are adhesively fixed, and the adhesive film (110) is viscous Tie the lateral surface in the polished part (200)；

Step 2：The carrying film layer (120) on the polished part (200) is removed, and cures the adhesive film (110)；

Step 3：The polished part (200) in the step 2 is polished, the institute in the step 2 is removed after polishing to be done State adhesive film (110).

3. polishing process method according to claim 2, which is characterized in that in the step 2, the adhesive film (110) its curing is made heating, UV irradiations or by way of squeezing；

In the step 3, after polishing to be done, the polished part (200) is removed by way of calcining or wet method removal The adhesive film (110) of the lateral surface of the polished part (200).

4. a kind of polishing assembly, in glossing, which is characterized in that including：Polished part (200), the polished part (200) Periphery face out and be coated with depositional coating (130).

5. a kind of polishing process method of polishing assembly as claimed in claim 4, which is characterized in that comprise the following steps：

Step 1：One layer of depositional coating (130) is deposited in the outer circumferential surface of the polished part (200)；

Step 2：The depositional coating (130) at the polished face of the polished part (200) in the step 1 is gone It removes, exposes polished face；

Step 3：Polished part (200) described in the step 2 are polished, it is described heavy in the step 2 to be removed after polishing to be done Integrated membrane layer (130).

6. polishing process method according to claim 5, which is characterized in that in the step 1, the polished part (200) by using any one of oxidizing process, nitriding, vapour deposition process, magnetron sputtering method, physical vaporous deposition at it Outer circumferential surface deposits one layer of depositional coating (130)；

In the step 2, the depositional coating (130) is etched by gas phase or liquid etching mode is treated at burnishing surface Depositional coating (130) removal, makes polished show out；

Either, the depositional coating (130) makes the depositional coating at polished face by grinding or polishing mode (130) remove, make polished show out；

In the step 3, after polishing to be done, the polished part (200) is gone by way of wet etching or dry etching Except the depositional coating (130) of the lateral surface of the polished part (200).

7. a kind of polishing assembly, in glossing, which is characterized in that including：Polished part (200), the polished part (200) Lateral surface or periphery face out and be coated with photoresist film layer (140).

8. a kind of polishing process method of polishing assembly as claimed in claim 7, which is characterized in that comprise the following steps：

Step 1：One layer of photoresist film layer (140) is coated in the lateral surface or outer circumferential surface of the polished part (200)；

Step 2：The photoresist film layer (140) at the polished face of polished part (200) described in the step 1 is gone It removes, exposes polished face；

Step 3：Cure the photoresist film layer (140) of the lateral surface of the polished part (200)；

Step 4：The polished part (200) in the step 3 is polished, the institute in the step 3 is removed after polishing to be done State photoresist film layer (140).

9. polishing process method according to claim 8, which is characterized in that in the step 1, the polished part (200) by using magnetron sputtering method or czochralski method one layer of photoresist film layer (140) is coated in its lateral surface or outer circumferential surface；

The periphery of the polished part (200) faces out when being coated with the photoresist film layer (140), right in the step 2 Polished part (200) development or liquid clean the photoresist film layer (140) in polished face；

In the step 3, the photoresist film layer (140) in the step 2 makes the polishing by way of hard baking The photoresist film layer (140) of the lateral surface of part (200) cures；

In the step 4, after polishing to be done, the polished part (200) is gone by way of wet etching or dry etching Except the photoresist film layer (140) of the lateral surface of the polished part (200).

10. polishing process method according to claim 8, which is characterized in that the periphery of the polished part (200) faces out When being coated with the photoresist film layer (140), in the step 2, the polished part (200) is used first to expose and is developed afterwards Mode remove the photoresist film layer (140) in polished face.