KR101175472B1 - A method for manufacturing flexible membrane for head of chemical-mechanical polisher and flexible membrane manufactured by the same - Google Patents
A method for manufacturing flexible membrane for head of chemical-mechanical polisher and flexible membrane manufactured by the same Download PDFInfo
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- KR101175472B1 KR101175472B1 KR1020100074026A KR20100074026A KR101175472B1 KR 101175472 B1 KR101175472 B1 KR 101175472B1 KR 1020100074026 A KR1020100074026 A KR 1020100074026A KR 20100074026 A KR20100074026 A KR 20100074026A KR 101175472 B1 KR101175472 B1 KR 101175472B1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
Provided are a method for manufacturing a flexible thin film for a chemical mechanical polishing head, and a flexible thin film for a chemical mechanical polishing head manufactured thereby.
The method for manufacturing a flexible thin film for a chemical mechanical polishing head according to the present invention includes spray coating a polymer coating layer on a flexible thin film substrate; And thermally curing the polymer coating layer, and the flexible thin film according to the present invention can improve the yield of the chemical mechanical polishing process with better flatness than the conventional flexible thin film, and furthermore, The present invention relates to a flexible thin film for a chemical mechanical polishing head, which can easily reduce wafer removal after wafer removal, thereby effectively reducing process time and yield loss due to wafer desorption.
Description
The present invention relates to a method for manufacturing a flexible thin film for chemical mechanical polishing heads and a flexible thin film for chemical mechanical polishing heads produced by the same. More specifically, the present invention exhibits superior edge profiles compared to conventional flexible thin films. Since the yield of the polishing process can be improved, and furthermore, the wafer can be easily detached after the process, a flexible thin film for a chemical mechanical polishing head can effectively reduce the process time, yield loss, etc. due to non-wafer removal of the wafer. will be
Integrated circuits are generally formed on wafers, in particular silicon wafers, by successive deposition of conductors, semiconductors or insulating layers. After each layer is deposited, the layers are etched to generate circuit characteristics. As a series of layers are successively deposited and etched, the outer or topmost surface of the wafer, i.e., the exposed surface of the wafer, gradually becomes unplanarized. This non-planar outer surface presents a problem for integrated circuit manufacturers. If the wafer outer surface is not planar, the photoresist layer overlying it is also not planar. The photoresist layer is generally patterned by photolithographic devices that focus the optical image on the photoresist. If the outer surface of the wafer is too bumpy, the maximum height difference between peaks and valleys on the outer surface will exceed the depth of focus of the imaging device, and the optical image cannot be properly focused on the outer surface of the wafer. Designing a new photolithography device with improved focus depth is a very expensive task. In addition, as the minimum wiring width used in integrated circuits becomes smaller, shorter wavelengths of light must be used, which further reduces the available depth of focus. Thus, there is a need to periodically planarize the wafer surface to provide a substantially planar layer surface.
Chemical mechanical polishing (CMP) is one method of planarization, wherein the chemical mechanical polishing is a wafer (wafer) to be flattened is mounted to the polishing head, and the polishing head mounting of the wafer is mounted on the lower surface of the polishing head. It is performed by contact of the flexible thin film with the wafer. Then, the wafer mounted on the head by contacting the flexible thin film is brought into contact with the polishing pad in which the surface opposite to the contact surface with the flexible thin film rotates. The head then presses the wafer against the polishing pad, and the head rotates to provide further movement between the wafer and the polishing pad. An abrasive slurry comprising an abrasive and at least one chemical reagent is distributed on the abrasive pad to provide an abrasive chemical solution at the interface between the pad and the wafer. This CMP process is quite complex and differs from simple wet sanding. In the CMP process, the reactants in the slurry react with the outer surface of the wafer to form reaction sites. Polishing is performed by the interaction of the abrasive particles with the polishing pad having the reaction site.
In particular, in CMP processes, the polishing rate, finish and flatness are determined by the pad and slurry combination, the relative speed between the wafer and the pad, and the force pushing the wafer against the pad. Insufficient flatness and finish will result in a defective wafer, so the combination of polishing pad and slurry is selected by the required finish and flatness. Under these conditions, the polishing rate determines the maximum throughput of the polishing apparatus. The polishing rate depends on the force with which the wafer is pressed against the pad. In particular, the greater this force, the faster the polishing rate. If the carrier head is subjected to non-uniform loads, that is, if the carrier head is subjected to greater force in only one area of the wafer, the high pressure area will be polished more quickly than the low pressure area. Thus, if the load is uneven, the wafer will be unevenly polished. One problem with the ring CMP process is that the edge of the wafer is often polished at a different speed than the wafer center (generally faster, sometimes slower). This problem, called the "edge effect", occurs even when the load is applied uniformly to the wafer. Edge effects generally occur at the periphery of the wafer, for example at the outermost 5 to 10 mm of the wafer. Edge effects reduce the overall flatness of the wafer, make the periphery of the wafer unsuitable for use in integrated circuits, and reduce yield. Therefore, the carrier head of the CMP apparatus should be equipped to optimize the polishing throughput and provide the desired flatness and finish.
In general, the carrier head includes a main body, a flexible thin film (membrane) loaded on the front surface of the main body, and a retaining ring mounted on an outer circumferential surface of the flexible thin film to prevent the wafer from being dislodged during rotation. . Among them, the flexible thin film is one of very important parts because the wafer directly contacts and presses a constant force on the contacted wafer. However, the flexible thin film according to the prior art has a problem that the semiconductor wafer is not detached from the head after the process, due to the surface tension of the water film formed between the flexible thin film and the semiconductor wafer. In other words, after the polishing process, the wafer should be easily unloaded (desorption), the wafer is not easily detached by the water between the water and the thin film, causing a process error, this process error rate is very frequent in the field. . Accordingly, there is an urgent need for a flexible thin film that can effectively eliminate the edge effect and can be easily detached from the flexible thin film even after the polishing process.
Accordingly, an object of the present invention is to provide a method of manufacturing a flexible thin film for a chemical mechanical polishing head, wherein the wafer is easily detached and polished.
Another problem to be solved by the present invention is to provide a flexible thin film for a chemical mechanical polishing head which has an easy edge detachment, polished wafer has an excellent edge profile.
In order to solve the above problems, the present invention comprises the steps of applying a polymer coating liquid on a flexible thin film substrate in a spray method; And thermally curing the polymer coating layer.
In one embodiment of the present invention, the flexible thin film substrate is a silicon rubber, the polymer coating layer is a silicon polymer, the silicon polymer is cross-linked by the thermal curing. Worse, the polymer coating layer was formed with irregularities by the thermal curing. In one embodiment of the present invention, the polymer coating solution was Silopren® LSR Topcoat TP 3719 (trade name) of GE Bayer Silicones. In addition, the thermal curing is carried out in a temperature range of 100 to 200 ℃.
The present invention further provides a flexible thin film for a chemical mechanical polishing head manufactured by the above-described method.
The present invention also provides a flexible thin film substrate made of silicon rubber; And a silicon rubber coating layer provided on the substrate, the silicon rubber coating layer having a predetermined uneven bend, wherein the silicone rubber coating layer is formed by spraying a silicone polymer liquid onto the substrate. After dispersion, it may be prepared by heat curing.
The flexible thin film according to the present invention exhibits a better edge profile than the conventional flexible thin film to improve the yield of the chemical mechanical polishing process, and furthermore, it is possible to easily remove the wafer after the process, so that the wafer is not removed. The present invention relates to a flexible thin film for a chemical mechanical polishing head, which can effectively reduce processing time and yield loss.
1 is a step diagram for a method of manufacturing a flexible thin film according to an embodiment of the present invention.
Figure 2 is a schematic diagram showing a manufacturing process of a flexible thin film according to an embodiment of the present invention.
3 is a surface photograph of a flexible thin film prepared according to the present embodiment.
4 and 5 are surface photographs of the flexible thin films of Comparative Examples 1 and 3, respectively.
Hereinafter, the present invention will be described in detail with reference to the accompanying drawings. However, the following contents are all for illustrating the present invention, and the scope of the present invention is not limited thereto or limited.
The present invention noted that the coating properties of a conventional, single-flat silicon rubber-based flexible thin film for a chemical mechanical polishing head do not cover the drive mechanism of a complex chemical mechanical polishing head simply by hydrophobic character. In particular, a water film is simply formed between the flexible thin film and the semiconductor wafer, and the complex chemical and mechanical mechanism in which the semiconductor wafer rotates in accordance with the rotation of the flexible thin film has a sufficient polishing effect as well as the effective polishing of the wafer, as in the prior art. Desorption is difficult to achieve In addition, even in the prior art of coating an organic material such as parylene on the surface of the thin film, sufficient polishing speed and wafer non-desorption cannot be easily solved, and a chemical process called deposition of organic material is required, resulting in economical efficiency. Falls.
In order to solve the above-mentioned problems, the liquefied polymer material, for example, a silicone polymer liquid is sprayed onto the surface of the flexible thin film, and then cured again, thereby forming a dense bent structure on the surface. Flexible thin films for mechanical polishing (CMP) heads were prepared. That is, the present inventors apply and deposit an uncured liquid silicone polymer to a silicone rubber which is a silicone polymer used as a conventional flexible thin film, and then harden and crosslink the liquid silicone polymer in the deposited state. Another silicone rubber coating layer is formed. The flexible thin film of the present invention manufactured in this manner has a dense curved structure (low surface roughness) of the surface and a stable structure even at a head rotating at high speed through homogeneous adhesion with the lower flexible thin film. At the same time, the problem of low polishing rate and non-desorption of wafers was solved.
1 is a step diagram showing a manufacturing process of a flexible thin film for a chemical mechanical polishing head according to an embodiment of the present invention.
Referring to FIG. 1, first, a coating material, that is, a silicon polymer material, is sprayed onto a surface of a flexible thin film substrate for a chemical mechanical polishing head made of silicon rubber. The injected liquid silicon rubber is adsorbed on the flat thin film surface of the silicon rubber material. In one embodiment of the present invention Silopren® LSR Topcoat TP 3719 (trade name, TP 3719) manufactured by GE Bayer Silicones, which is a silicone rubber that simultaneously applies two mixed polymer materials and a diluent to the surface and crosslinks them by heat treatment. Was used as the silicon coating layer, through which the increase of frictional force and the improvement of the wafer non-adsorption problem were simultaneously achieved. However, the scope of the present invention is not limited thereto, and another material may be used, which may form a coating layer having curved portions of unevenness, which is within the scope of the present invention. The TP 3719 used in one embodiment of the present invention is also bonded to the lower silicon rubber as the heat proceeds to cure, thereby fully bonding the coating material with the lower flexible thin film substrate.
Thereafter, the liquid polymer material is cured. The curing temperature is preferably 100 to 200 ℃, which corresponds to the curing temperature of TP 3719. In particular, in one embodiment of the present invention, the liquid silicone polymer is crosslinked with each other to form another silicone rubber coating layer, and the silicone rubber coating layer exhibits excellent wafer desorption properties and polishing speed. If the curing temperature is less than the above range, the crosslinking is difficult to proceed at a sufficient rate. If the curing temperature is exceeded, the lower substrate is affected.
Figure 2 is a schematic diagram showing a manufacturing process of a flexible thin film according to an embodiment of the present invention.
Referring to FIG. 2, first, a flexible
Thereafter, the applied
The uneven curved structure of the surface of the flexible thin film according to the present invention is very important in the chemical mechanical polishing process to which the present invention is applied, which will be described in detail below.
As described above, the present invention forms a dense structure of the surface (which means that a smaller elevation curve is formed, which is also expressed as a low surface roughness) by the silicon rubber that is cured after deposition. The compact structure (that is, the low height difference concave-convex structure) reduces the unit contact area between the wafer and the flexible thin film, thereby solving the problem of non-adhesion of the wafer. The flexible thin film produced by the above-described method furthermore increases the friction of the flexible thin film due to the densified convex convex curvature, as well as the densified bent structure, and the chemical mechanical polishing head according to the present invention by the increased frictional force. The flexible thin film achieves excellent polishing properties, edge polishing properties, and the like.
This will be described in more detail as follows.
In general, the chemical mechanical polishing head itself rotates at a high rpm, but the wafer to be actually polished is rotated by a flexible thin film that rotates in contact with it. In other words, even though a water film is formed therebetween, the relative frictional force between the flexible thin film and the wafer becomes the basic driving force for rotating the wafer. Therefore, if the frictional force of the flexible thin film is sufficiently secured, since the rotational speed of the flexible thin film and the wafer contacting the flexible thin film is close to the rotational speed of the head itself, sufficient polishing effect can be achieved through this. That is, although a water film formed by water is formed between the wafer and the flexible thin film, the increased frictional force on the surface of the flexible thin film affects the actual wafer polishing, which will be described in more detail through the following experimental example.
Example One
Example 1-1
Surface coating
Silopren® LSR Topcoat TP 3719 from GE Bayer Silicones, a silicone polymer, was sprayed onto the flexible thin film (membrane) surface of Applite's CMP equipment. Thereafter, the sprayed coating material was cured at 180 ° C. for 30 minutes. The coating material includes a silicone polymer solution capable of crosslinking with heat and a diluent thereof.
3 is a surface photograph of a flexible thin film prepared according to the present embodiment.
Referring to FIG. 3, it can be seen that the surface of the flexible thin film according to the present invention has a fairly dense surface curvature, whereby low surface roughness is obtained.
Comparative example One
After sand was sprayed on the mold surface, a flexible thin film was formed in which the bent portion of the sand was formed on the basis of the mold.
Comparative example 2
Comparative Example 2 used an uncoated flexible thin film (Applied Materials, USA).
Comparative example 3
A parylene-coated flexible thin film (Applied Materials, USA) was used as Comparative Example 3.
Experimental Example One
Friction force measurement result
Coefficient of Friction corresponding to the friction of the flexible thin film measured in the present invention is as follows. In this experimental example, the friction force was measured by dividing the water sprayed and the water sprayed.
First, the frictional force without water is shown in Table 1 below.
In addition, the frictional force in the water sprayed state is shown in Table 2 below.
Referring to the above results, the index of friction of the flexible thin film (Example 1) of the present invention after spraying a silicone-based polymer material with a spray, and then hardened it is particularly high, especially in the water sprayed state (this is the actual working environment Correspondence) shows that the frictional force is much higher than that of Comparative Example 3 having similar surface curvature.
Experimental Example 2
Wafer Desorption
In the present experimental example, the CMP process was performed with CMP equipment of Applied Materials for 21 cycles with a dummy wafer. After each cycle, the wafer was cleaned with water and loaded back onto the head, leaving water on the wafer surface.
Table 3 below shows the wafer desorption test results for the thin film of Sample # 1-4.
Referring to the above results, it can be seen that the flexible thin film of the present invention in which surface roughness is generated by spraying silicon rubber on the surface and then curing can effectively eliminate the problem of non-desorption of the wafer.
Experimental Example 3
Surface photo
4 and 5 are surface photographs of the flexible thin films of Comparative Examples 1 and 3, respectively.
It can be seen that the surface of the flexible thin film according to the present invention and the flexible thin film of Comparative Example 3 have less dense surface curvature. This less dense surface curvature increases the unit contact area between the wafer and the thin film, which causes the wafer to adhere to the thin film by surface tension during wafer unloading. In the case of Comparative Example 1 has a very flat surface structure, the wafer is attached to the thin film with a stronger force, which can be seen from the results of Experimental Example 2.
Claims (9)
Spray coating a liquid silicone polymer on a flexible thin film substrate that is a silicone rubber; And
Thermally curing the applied liquid silicone polymer, thereby adhering the liquid silicone polymer to the flexible thin film substrate and simultaneously forming irregularities in the liquid silicone polymer layer. Flexible thin film manufacturing method.
The thermal curing is a flexible thin film manufacturing method characterized in that the progress in the temperature range of 100 to 200 ℃.
A chemical machine comprising: a silicon rubber coating layer provided on the substrate, the silicon rubber coating layer having a predetermined uneven bend, wherein the silicone rubber coating layer is manufactured by thermal curing after the silicone polymer liquid is dispersed by spray onto the substrate. Flexible thin film for polishing heads.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020100074026A KR101175472B1 (en) | 2010-07-30 | 2010-07-30 | A method for manufacturing flexible membrane for head of chemical-mechanical polisher and flexible membrane manufactured by the same |
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| Application Number | Priority Date | Filing Date | Title |
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| KR1020100074026A KR101175472B1 (en) | 2010-07-30 | 2010-07-30 | A method for manufacturing flexible membrane for head of chemical-mechanical polisher and flexible membrane manufactured by the same |
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| KR20120012098A KR20120012098A (en) | 2012-02-09 |
| KR101175472B1 true KR101175472B1 (en) | 2012-08-21 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102504029B1 (en) | 2022-02-24 | 2023-02-28 | 세정로봇 주식회사 | Multi wafer transfer machine for cmp process |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019125933A1 (en) * | 2017-12-19 | 2019-06-27 | Applied Materials, Inc. | Method and precursor selection for flowable silicon dioxide gap fill for advanced memory application |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102504029B1 (en) | 2022-02-24 | 2023-02-28 | 세정로봇 주식회사 | Multi wafer transfer machine for cmp process |
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