JPS6251226A - Polishing method - Google Patents
Polishing methodInfo
- Publication number
- JPS6251226A JPS6251226A JP60191596A JP19159685A JPS6251226A JP S6251226 A JPS6251226 A JP S6251226A JP 60191596 A JP60191596 A JP 60191596A JP 19159685 A JP19159685 A JP 19159685A JP S6251226 A JPS6251226 A JP S6251226A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- polishing
- face
- protective film
- polished
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明は半導体ウェハの一面側を研磨治具に固定して
この半導体ウェハの他面側を研磨する研磨方法の改良に
関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to an improvement in a polishing method for fixing one side of a semiconductor wafer to a polishing jig and polishing the other side of the semiconductor wafer.
一般に、半導体ウェハの研磨方法の一種として研磨治具
のリファレンスプレートに半導体ウェハの一面側（非研
磨面側）を固定し、この半導体ウェハの他面側（研磨面
側）を例えば研磨装置の定盤表面の研磨布に圧接させて
研磨する片面研磨方法が知られている。また、この片面
研磨方法では例え、ばパラフィン等のワックスによって
半導体ウェハの非研磨面側をリファレンスプレートに固
定する方法が知られているが、これ以外にも半導体ウェ
ハをワックス無しで研磨冶具に固定する方法が開発され
ている。Generally, as a type of polishing method for semiconductor wafers, one side (non-polishing side) of the semiconductor wafer is fixed to a reference plate of a polishing jig, and the other side (polishing side) of the semiconductor wafer is fixed to the reference plate of a polishing jig, for example. A single-sided polishing method is known in which the surface of the disc is polished by pressing it against a polishing cloth. In addition, in this single-sided polishing method, for example, a method is known in which the non-polished side of the semiconductor wafer is fixed to the reference plate with wax such as paraffin, but there are other methods in which the semiconductor wafer is fixed to the polishing jig without using wax. A method has been developed to do so.
第３図は半導体ウェハの非研磨面側をワックス無しで研
磨治具に固定して半導体ウェハの研磨面側を研磨する半
導体ウェハの研磨方法を実施する場合に使用する研磨治
具Ａの要部の概略構成を示すもので、、１はリファレン
スプレートである。このリファレンスプレート１の一方
の面には接着シート２を介して微少空孔を有する弾性層
３が固定されている。また、４はテンプレートで、この
テンプレート４には複数の円孔５・・・が形成されてい
る。さらに、このテンプレート４は各円孔５と対向する
位置に各円孔５と同一径の円孔６・・・がそれぞれ形成
された接着シート７を介して弾性層３に固定されている
。Figure 3 shows the main parts of polishing jig A used when performing a semiconductor wafer polishing method in which the non-polished side of the semiconductor wafer is fixed to the polishing jig without wax and the polished side of the semiconductor wafer is polished. 1 is a reference plate. An elastic layer 3 having minute holes is fixed to one surface of the reference plate 1 via an adhesive sheet 2. Further, 4 is a template, and this template 4 has a plurality of circular holes 5 formed therein. Further, this template 4 is fixed to the elastic layer 3 via an adhesive sheet 7 in which circular holes 6 having the same diameter as each circular hole 5 are formed at a position facing each circular hole 5.
そして、研磨加工時には第４図に示すようにテンプレー
ト４の各円孔５内に半導体ウェハ８・・・をそれぞれ挿
入状態で配設する。この場合、各半導体ウェハ８の非研
磨面８ａ側を弾性Ｈ３に対向させた状態で半導体ウェハ
８を載置し、この半導体ウェハ８の非研磨面８ａ側と弾
性層３との間に介在させた水の表面張力によって半導体
ウェハ８を研磨治具Ａに固定する。そして、この状態で
第５図に示すようにリファレンスプレート１をプレート
加圧ヘッド９によって保持させて半導体ウェハ８の研磨
面８ｂ側を研磨装置の定盤１０表面の研磨布１１に圧接
させ、プレート加圧ヘッド９および研磨装置の定盤１０
をそれぞれ回転させて半導体ウェハ８の研磨面８ｂ側を
研磨加工するＪζうにしている。During the polishing process, semiconductor wafers 8 are inserted into each of the circular holes 5 of the template 4, as shown in FIG. 4. In this case, the semiconductor wafer 8 is placed with the non-polished surface 8a side of each semiconductor wafer 8 facing the elastic layer H3, and the semiconductor wafer 8 is placed between the non-polished surface 8a side of the semiconductor wafer 8 and the elastic layer 3. The semiconductor wafer 8 is fixed to the polishing jig A by the surface tension of the water. In this state, as shown in FIG. 5, the reference plate 1 is held by the plate pressure head 9, and the polishing surface 8b side of the semiconductor wafer 8 is pressed against the polishing cloth 11 on the surface plate 10 of the polishing apparatus, and the plate Pressure head 9 and polishing device surface plate 10
are rotated to polish the polishing surface 8b side of the semiconductor wafer 8.
半導体ウェハ８の非研磨面８ａ側をワックス無しで研磨
治具Ａに固定して半導体ウェハ８の研磨面８ｂ側を研磨
する従来の研磨方法ではテンプレート４の各円孔５内に
半導体ウェハ８・・・をそれぞれ挿入配設した際に第６
図に示すように半導体ウェハ８の外周面８Ｃとテンプレ
ート４の円孔５の内周面５ａとの間に隙間Ｓが形成され
るので、研磨作業中にこの隙間Ｓを介して研磨液が弾性
層３側に浸入し、半導体ウェハ８の非研磨面８ａがこの
研磨液によって汚染される問題があった。特に、例えば
砒化ガリウムウェハ８を次亜塩素酸系研磨剤によって研
磨する場合には研磨作業中にウェハ８の外周面８Ｃとテ
ンプレート４の円孔５の内周面５ａとの間の隙間Ｓを介
して弾性層３側に浸入した次亜塩素酸系研磨剤との接触
によってウェハ８の非研磨面８ａが化学反応を起こし、
ウェハ規格外の黒色の反応生成物が形成されて不良品に
なる問題があった。In the conventional polishing method in which the unpolished surface 8a side of the semiconductor wafer 8 is fixed to the polishing jig A without wax and the polished surface 8b side of the semiconductor wafer 8 is polished, the semiconductor wafer 8 is placed in each circular hole 5 of the template 4. When inserting and arranging the 6th
As shown in the figure, a gap S is formed between the outer circumferential surface 8C of the semiconductor wafer 8 and the inner circumferential surface 5a of the circular hole 5 of the template 4. There was a problem that the polishing liquid entered the layer 3 side and contaminated the non-polished surface 8a of the semiconductor wafer 8. In particular, when polishing a gallium arsenide wafer 8 with a hypochlorous acid-based polishing agent, for example, the gap S between the outer circumferential surface 8C of the wafer 8 and the inner circumferential surface 5a of the circular hole 5 of the template 4 is The non-polished surface 8a of the wafer 8 causes a chemical reaction due to contact with the hypochlorous acid-based polishing agent that has entered the elastic layer 3 side through the wafer 8.
There was a problem in that black reaction products that did not meet the wafer specifications were formed, resulting in defective products.
この発明は研磨作業中に半導体ウェハの非研磨面側が研
磨液によって汚染されることを防止することができ、不
良品の発生を防止することができる研磨方法を提供する
ことを目的とするものである。An object of the present invention is to provide a polishing method that can prevent the non-polishing side of a semiconductor wafer from being contaminated by polishing liquid during polishing work, and can also prevent the production of defective products. be.
この発明は半導体ウェハを研磨治具に固定する前に、研
磨液による半導体ウェハの非研磨面側の汚染を防止する
保護膜を半導体ウェハの非研磨面側に形成させたことを
特徴とするものである。This invention is characterized in that, before fixing the semiconductor wafer to a polishing jig, a protective film is formed on the non-polishing surface of the semiconductor wafer to prevent contamination of the non-polishing surface of the semiconductor wafer by the polishing liquid. It is.
以下、この発明の一実施例を第１図および第２図を参照
して説明する。なお、第１図および第２図中で第３図乃
至第６図と同一部分には同一の符号を付してその説明を
省略する。すなわち、この発明は半導体ウェハ８を研磨
治具Ａに固定する前に、研磨液による半導体ウェハ８の
非研磨面８ａ側の汚染を防止する保護膜２１を半導体ウ
ェハ８の非研磨面側に形成させたことを特徴とするもの
である。この場合、半導体ウェハ８の非研磨面８ａ側に
保護膜２１を形成させる手段の一例を次に述べる。An embodiment of the present invention will be described below with reference to FIGS. 1 and 2. Note that the same parts in FIGS. 1 and 2 as in FIGS. 3 to 6 are given the same reference numerals, and their explanations will be omitted. That is, in the present invention, before fixing the semiconductor wafer 8 to the polishing jig A, a protective film 21 is formed on the non-polishing surface side of the semiconductor wafer 8 to prevent the non-polishing surface 8a side of the semiconductor wafer 8 from being contaminated by the polishing liquid. It is characterized by the fact that In this case, an example of means for forming the protective film 21 on the non-polished surface 8a side of the semiconductor wafer 8 will be described below.
まず、第１図に示すように研磨作業を行なう半導体ウェ
ハ８を研磨冶具Ａに固定する前に、円形の回転プレート
２２上に非研磨面８ａ側を上に向けた状態（非研磨面８
ａ側を外側に露出させた状態）で載置する。この回転プ
レー１〜２２には中央に吸着口が形成されており、この
回転プレート２２の吸着口には管状の回転軸２３の上端
部が連結されている。また、回転軸２３の下端部は図示
しない駆動機構に連結されており、この駆動機構によっ
て回転軸２３を介して回転プレート２２が回−転駆動さ
れるようになっている。さらに、回転軸２３には例えば
真空ポンプ等のバキューム機構が連結されており、この
バキューム機構によって回転軸２３の管内部の空気が吸
引されて回転プレート２２の吸着口に半導体ウェハ８が
吸着されるようになっている。そして、バキューム機構
によって回転プレート２２上に半導体ウェハ８を固定し
たのち、回転プレート２２を例えばｉ ｏｏｏ〜６００
０ｒｌ）ｍの節回の回転数で回転駆動する。First, as shown in FIG. 1, before fixing the semiconductor wafer 8 to be polished to the polishing jig A, place it on a circular rotating plate 22 with the non-polishing surface 8a facing upward (the non-polishing surface 8
Place it with the a side exposed to the outside. A suction port is formed in the center of each of the rotary plates 1 to 22, and the upper end of a tubular rotating shaft 23 is connected to the suction port of the rotary plate 22. Further, the lower end of the rotating shaft 23 is connected to a drive mechanism (not shown), and the rotating plate 22 is rotationally driven via the rotating shaft 23 by this drive mechanism. Furthermore, a vacuum mechanism such as a vacuum pump is connected to the rotating shaft 23 , and the air inside the tube of the rotating shaft 23 is sucked by the vacuum mechanism, and the semiconductor wafer 8 is attracted to the suction port of the rotating plate 22 . It looks like this. After the semiconductor wafer 8 is fixed on the rotating plate 22 by a vacuum mechanism, the rotating plate 22 is moved to
Rotationally driven at a rotational speed of 0rl)m.
さらに、回転プレート２２の回転数が設定回転数に上昇
して回転が安定した状態で、第２図に示すように半導体
ウェハ８の非研磨面８ａに、例えばポリテルペン樹脂を
主成分とした［スカイコートＢＲＪ （商品名；白化
精工（株）製）などの合成樹脂製の保護林２４を滴下し
、遠心力によって半導体ウェハ８の非研磨面８ａの表面
に厚さの均一な前記保護膜２１を形成する。Further, when the rotational speed of the rotating plate 22 increases to the set rotational speed and the rotation is stabilized, as shown in FIG. Protective film 24 made of synthetic resin such as Coat BRJ (trade name; manufactured by Hakuka Seiko Co., Ltd.) is dropped, and the protective film 21 of uniform thickness is formed on the surface of non-polished surface 8a of semiconductor wafer 8 by centrifugal force. Form.
また、このように半導体ウェハ８の非研磨面８ａの表面
に厚さの均一な保護膜２１を形成させたのち、従来と同
様に半導体ウェハ８の非研磨面８ａ側を弾性層３に対向
させた状態で半導体ウェハ８をテンプレート４の円孔５
内の弾性層３上に載置し、この半導体ウェハ８の非研磨
面８ａ側と弾性層３との間に介在させた水の表面張力に
よって半導体ウェハ８を研磨治具Ａに固定する。そして
、この状態でリファレンスプレート１をプレート加圧ヘ
ッド９によって保持させて半導体ウェハ８の研磨面８ｂ
側を研磨装置の定盤１０表面の研磨布１１に圧接させ、
プレート加圧ヘッド９および研磨装置の定盤１０をそれ
ぞれ回転させて半導体ウェハ８の研磨面８ｂ側を研磨加
工する。Further, after forming the protective film 21 with a uniform thickness on the surface of the non-polished surface 8a of the semiconductor wafer 8, the non-polished surface 8a side of the semiconductor wafer 8 is placed opposite the elastic layer 3 as in the conventional method. In this state, insert the semiconductor wafer 8 into the circular hole 5 of the template 4.
The semiconductor wafer 8 is fixed to the polishing jig A by the surface tension of water interposed between the non-polished surface 8a of the semiconductor wafer 8 and the elastic layer 3. In this state, the reference plate 1 is held by the plate pressure head 9, and the polished surface 8b of the semiconductor wafer 8 is
The side is brought into pressure contact with the polishing cloth 11 on the surface plate 10 of the polishing device,
The plate pressure head 9 and the surface plate 10 of the polishing apparatus are rotated to polish the polishing surface 8b side of the semiconductor wafer 8.
そこで、上記方法によれば研磨作業を行なう半導体ウェ
ハ８を研磨治具Ａに固定する前に、半導体ウェハ８の非
研磨面８ａの表面に厚さの均一な保護膜２１を形成し、
非研磨面８ａの表面に保護膜２１を形成させた半導体ウ
ェハ８をこの半導体ウェハ８の非研磨面８ａ側と弾性層
３との間に介在させた水の表面張力によって研磨治具Ａ
に固定して半導体ウェハ８の研磨面８ｂを研磨するよう
にしたので、研磨作業中に半導体ウェハ８の外周面８Ｇ
とテンプレート４の円孔５の内周面５ａとの間の隙間Ｓ
を介して研磨液が弾性層３側に浸入した場合であっても
非研磨面８ａの表面の保護膜２１によって研磨液が半導
体ウェハ８の非研磨面８ａに直接接触することを防止す
ることができる。Therefore, according to the above method, before the semiconductor wafer 8 to be polished is fixed to the polishing jig A, a protective film 21 having a uniform thickness is formed on the non-polished surface 8a of the semiconductor wafer 8,
The semiconductor wafer 8 with the protective film 21 formed on the surface of the non-polishing surface 8a is polished by the surface tension of water interposed between the non-polishing surface 8a side of the semiconductor wafer 8 and the elastic layer 3 in the polishing jig A.
Since the polishing surface 8b of the semiconductor wafer 8 is polished by fixing it to
and the inner peripheral surface 5a of the circular hole 5 of the template 4
Even if the polishing liquid enters the elastic layer 3 side through the protective film 21 on the surface of the non-polishing surface 8a, the polishing liquid can be prevented from coming into direct contact with the non-polishing surface 8a of the semiconductor wafer 8. can.
そのため、従来のように研磨作業中に研磨液が半導体ウ
ェハ８の非研磨面８ａに直接接触して半導体ウェハ８の
非研磨面８ａがこの研磨液によって汚染されることを確
実に防止することができる。Therefore, it is impossible to reliably prevent the polishing liquid from coming into direct contact with the non-polishing surface 8a of the semiconductor wafer 8 and contaminating the non-polishing surface 8a of the semiconductor wafer 8 with the polishing liquid, unlike in the conventional polishing operation. can.
したがって、例えば砒化ガリウムウェハ８を次亜□塩素
酸系研磨剤によって研磨する場合であってもウェハ８′
のシＬ研磨面８ａが化学反応を起こし、ウェハ規格外の
黒色の反応生成物が形成されて不良品が発生することを
防止することができ、ウェハ８の非研磨面８ａ側を常に
正常な状態で保持させることができる。Therefore, for example, even when polishing a gallium arsenide wafer 8 with a hypochlorite-based polishing agent, the wafer 8'
It is possible to prevent the non-polished surface 8a of the wafer 8 from causing a chemical reaction and the formation of a black reaction product that does not meet the wafer specifications, thereby preventing the production of defective products. It can be kept in the same state.
なお、この発明は上記実施例に限定されるものではない
。例えば、上記実施例では半導体ウェハ８の非研磨面８
ａ側と弾性層３との間に介在させた水の表面張力によっ
て半導体ウェハ８を固定する研磨治具Ａを使用する際に
この発明を適用した場合について示したが、半導体ウェ
ハ８の非研磨面８ａ側を真空吸着によってリファレンス
プレート１に固定する研磨冶具を使用する際にこの発明
を適用してもよい。さらに、その他この発明の要旨を逸
脱しない範囲で種々変形実施できることは勿論である。Note that this invention is not limited to the above embodiments. For example, in the above embodiment, the non-polished surface 8 of the semiconductor wafer 8
Although the present invention is applied when using the polishing jig A that fixes the semiconductor wafer 8 by the surface tension of water interposed between the a side and the elastic layer 3, The present invention may be applied when using a polishing jig that fixes the surface 8a side to the reference plate 1 by vacuum suction. Furthermore, it goes without saying that various other modifications can be made without departing from the gist of the invention.
この発明によれば半導体ウェハを研磨治具に固定する前
に、研磨液による半導体ウェハの非研磨面側の汚染を防
止する保護膜を半導体ウェハの非研磨面側に形成させた
ので、研磨作業中に半導体−〇−
ウェハの非研磨面側が研磨液によって汚染されることを
防止することができ、不良品の発生を防止することがで
きる。According to this invention, before fixing the semiconductor wafer to the polishing jig, a protective film is formed on the non-polishing surface of the semiconductor wafer to prevent contamination of the non-polishing surface of the semiconductor wafer by the polishing liquid. It is possible to prevent the non-polishing surface side of the semiconductor wafer from being contaminated by the polishing liquid, and to prevent the production of defective products.
第１図および第２図はこの発明の一実施例を示すもので
、第１図は半導体ウェハを研磨治具に固定する前に回転
プレートに載置した状態を示す側面図、第２図は半導体
ウェハの非研磨面に保護膜を形成する作業を説明するた
めの斜視図、第３図は研磨冶具の概略構成を示す分解斜
視図、第４図は研磨冶具に半導体ウェハを固定した状態
を示す斜視図、第５図は半導体ウェハの研磨面の研磨作
業状態を示す縦断面図、第６図は研磨治具における半導
体ウェハ固定部の要部を示す縦断面図である。
Ａ・・・研磨治具、８・・・半導体ウェハ、８ａ・・・
非研磨面、８ｂ・・・研磨面、２１・・・保護膜。
出願人代理人 弁理士 鈴江武彦
第１図 第２図
第５図
第６図1 and 2 show an embodiment of the present invention. FIG. 1 is a side view showing a semiconductor wafer placed on a rotating plate before being fixed to a polishing jig, and FIG. A perspective view for explaining the process of forming a protective film on the non-polished surface of a semiconductor wafer, FIG. 3 is an exploded perspective view showing the schematic structure of a polishing jig, and FIG. 4 shows a semiconductor wafer fixed to the polishing jig. FIG. 5 is a longitudinal cross-sectional view showing the state of polishing the polished surface of a semiconductor wafer, and FIG. 6 is a vertical cross-sectional view showing a main part of the semiconductor wafer fixing part in the polishing jig. A... Polishing jig, 8... Semiconductor wafer, 8a...
Non-polished surface, 8b... Polished surface, 21... Protective film. Applicant's representative Patent attorney Takehiko Suzue Figure 1 Figure 2 Figure 5 Figure 6
Claims (1)
前記半導体ウェハの研磨面側を研磨加工する研磨方法に
おいて、前記半導体ウェハを前記研磨治具に固定する前
に、研磨液による前記半導体ウェハの非研磨面側の汚染
を防止する保護膜を前記半導体ウェハの非研磨面側に形
成させたことを特徴とする研磨方法。In a polishing method in which the polished side of the semiconductor wafer is polished while the non-polished side of the semiconductor wafer is fixed to a polishing jig, the semiconductor wafer is polished with a polishing liquid before the semiconductor wafer is fixed to the polishing jig. A polishing method characterized in that a protective film for preventing contamination of the non-polishing surface of the wafer is formed on the non-polishing surface of the semiconductor wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60191596A JPS6251226A (en) | 1985-08-30 | 1985-08-30 | Polishing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60191596A JPS6251226A (en) | 1985-08-30 | 1985-08-30 | Polishing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6251226A true JPS6251226A (en) | 1987-03-05 |
Family
ID=16277266
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60191596A Pending JPS6251226A (en) | 1985-08-30 | 1985-08-30 | Polishing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6251226A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01125830A (en) * | 1987-11-10 | 1989-05-18 | Naoetsu Denshi Kogyo Kk | Grinding of semiconductor wafer |
| WO2000067305A1 (en) * | 1999-04-30 | 2000-11-09 | Shin-Etsu Handotai Co., Ltd. | Wafer polishing method and cleaning method, and protection film |
| CN102263024A (en) * | 2011-07-18 | 2011-11-30 | 北京通美晶体技术有限公司 | Back side anticorrosion method of single side polishing wafer |
| CN102267087A (en) * | 2010-06-01 | 2011-12-07 | 旭硝子株式会社 | Grinding method and grinding device for glass substate |
| CN108098570A (en) * | 2017-12-15 | 2018-06-01 | 苏州新美光纳米科技有限公司 | Polishing assembly and its polishing process method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57178330A (en) * | 1981-04-28 | 1982-11-02 | Toshiba Corp | Manufacture of semiconductor device |
| JPS6084821A (en) * | 1983-10-15 | 1985-05-14 | Rohm Co Ltd | Manufacture of semiconductor device |
-
1985
- 1985-08-30 JP JP60191596A patent/JPS6251226A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57178330A (en) * | 1981-04-28 | 1982-11-02 | Toshiba Corp | Manufacture of semiconductor device |
| JPS6084821A (en) * | 1983-10-15 | 1985-05-14 | Rohm Co Ltd | Manufacture of semiconductor device |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01125830A (en) * | 1987-11-10 | 1989-05-18 | Naoetsu Denshi Kogyo Kk | Grinding of semiconductor wafer |
| WO2000067305A1 (en) * | 1999-04-30 | 2000-11-09 | Shin-Etsu Handotai Co., Ltd. | Wafer polishing method and cleaning method, and protection film |
| EP1122767A1 (en) * | 1999-04-30 | 2001-08-08 | Shin-Etsu Handotai Co., Ltd | Wafer polishing method and cleaning method, and protection film |
| EP1122767A4 (en) * | 1999-04-30 | 2006-05-17 | Shinetsu Handotai Kk | Wafer polishing method and cleaning method, and protection film |
| KR100654501B1 (en) * | 1999-04-30 | 2006-12-05 | 신에쯔 한도타이 가부시키가이샤 | Wafer Polishing, Cleaning and Protective Films |
| CN102267087A (en) * | 2010-06-01 | 2011-12-07 | 旭硝子株式会社 | Grinding method and grinding device for glass substate |
| CN102263024A (en) * | 2011-07-18 | 2011-11-30 | 北京通美晶体技术有限公司 | Back side anticorrosion method of single side polishing wafer |
| CN108098570A (en) * | 2017-12-15 | 2018-06-01 | 苏州新美光纳米科技有限公司 | Polishing assembly and its polishing process method |
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