JPH01268032A - Method and apparatus for wafer polishing - Google Patents

Method and apparatus for wafer polishing

Info

Publication number
JPH01268032A
JPH01268032A JP9550588A JP9550588A JPH01268032A JP H01268032 A JPH01268032 A JP H01268032A JP 9550588 A JP9550588 A JP 9550588A JP 9550588 A JP9550588 A JP 9550588A JP H01268032 A JPH01268032 A JP H01268032A
Authority
JP
Japan
Prior art keywords
polishing
wafer
surface plate
chuck
semiconductor wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9550588A
Other languages
Japanese (ja)
Inventor
Hajime Yui
肇 油井
Takashi Shimura
俊 志村
Masahiko Nonaka
野中 正彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP9550588A priority Critical patent/JPH01268032A/en
Publication of JPH01268032A publication Critical patent/JPH01268032A/en
Pending legal-status Critical Current

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  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

PURPOSE:To enable accurately polish a wafer into plane form, by polishing the wafer held in a polishing chuck with a part thereof sticking out from a polishing surface plate or a polishing cloth. CONSTITUTION:Each polishing chuck 4 holds one semiconductor wafer 5, which is polished with a part thereof sticking out from a polishing surface plate 1 or a polishing cloth 3. For example, the semiconductor wafer 5 to be polished is held by the polishing chuck 4 by vacuum absorption or any other means, rotating the polishing chuck 4 with a motor 9 forces the semiconductor wafer 5 to rotate together with the polishing chuck 4 at a rotating speed n and presses the wafer 5 on the polishing cloth 3 on the polishing surface plate 1 forcibly rotated by a motor 2 at a rotating speed N. The semiconductor wafer 5 in this state rotates together with the polishing chuck 4 at a rotating speed n while reciprocating in the direction of the diameter of the polishing surface plate 1 and is polished by the friction between said wafer and the polishing cloth 3, with a part thereof sticking out from the polishing cloth 3 in the inside and outside of the polishing surface plate 1.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は研磨技術、特に、半導体ウェハの如き薄板材料
の研磨に適用して効果のある技術に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a polishing technique, and particularly to a technique that is effective when applied to polishing thin plate materials such as semiconductor wafers.

〔従来の技術〕[Conventional technology]

従来、半導体ウェハ(以下、単にウェハということがあ
る。)の研磨技術については、株式会社工業調査会、昭
和58年11月15日発行、「電子材料J 1983年
別冊、P49〜P56に記載されている。
Conventionally, polishing technology for semiconductor wafers (hereinafter simply referred to as wafers) has been described in "Electronic Materials J 1983 Special Issue, P49 to P56, published by Kogyo Research Association Co., Ltd., November 15, 1983. ing.

ところで、本発明者は半導体ウェハの研磨技術について
検討した。すなわち、半導体ウェハの研磨はウェハ全面
を研磨布上に強く押し当て、研磨布上に研磨剤を流しな
がら研磨布およびウェハを回転させることによって、そ
の摩擦で研磨を行うものである。
By the way, the present inventor has studied polishing techniques for semiconductor wafers. That is, in polishing a semiconductor wafer, the entire surface of the wafer is strongly pressed against a polishing cloth, and the polishing cloth and wafer are rotated while a polishing agent is flowed onto the polishing cloth, and the polishing is performed using the friction generated by the polishing.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

しかしながら、上記従来技術は、ウェハを研磨布に押し
当てたとき、研磨圧力がウェハ外周部で高く、中央部で
低くなり、全体的には不均一になるという問題、また、
研磨布全面にウェハが均一に作用しないために研磨布の
摩耗が不均一になる問題がある。さらに、研磨布の上あ
るいは中に異物が堆積し易くなるという問題がある。
However, the above conventional technology has the problem that when the wafer is pressed against the polishing cloth, the polishing pressure is high at the outer periphery of the wafer and low at the center, resulting in non-uniformity as a whole.
There is a problem in that the polishing cloth wears unevenly because the wafer does not work uniformly on the entire surface of the polishing cloth. Furthermore, there is a problem in that foreign matter tends to accumulate on or in the polishing cloth.

本発明の目的は、ウェハを平坦に精度良く研磨する技術
を提供することにある。
An object of the present invention is to provide a technique for polishing a wafer to a flat surface with high precision.

本発明の他の目的は、ウェハに傷をつけることなく研磨
する技術を提供することにある。
Another object of the present invention is to provide a technique for polishing a wafer without damaging it.

本発明の前記ならびにその他の目的と新規な特徴は、本
明細書の記述および添付図面から明らかになるであろう
The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.

〔課題を解決するための手段] 本願において開示される発明のうち代表的なものの概要
を簡単に説明すれば、次の通りである。
[Means for Solving the Problems] A brief overview of typical inventions disclosed in this application is as follows.

すなわち、研磨チャックに保持した半導体ウェハの一部
を研磨定盤または研磨布から外側にはみ出させた状態で
研磨を行うものである。
That is, polishing is performed with a part of the semiconductor wafer held by the polishing chuck protruding outward from the polishing surface plate or polishing cloth.

〔作用〕[Effect]

上記した手段によれば、ウェハの一部分が研磨布から外
にはみ出すことにより、ウェハがはみ出している部分は
研磨されないために、ウェハの外周部のブレを打ち消す
ことができる。
According to the above-mentioned means, a portion of the wafer protrudes outside the polishing cloth, and the protruding portion of the wafer is not polished, thereby making it possible to cancel out the wobbling of the outer periphery of the wafer.

また、研磨布から外にウェハが出ることにより、研磨布
全面が均一に摩耗する。さらに、研磨布上または中の異
物は、ウェハが研磨布から外に出るときに研磨布外(;
掃き出すことができる。
Further, since the wafer comes out from the polishing cloth, the entire surface of the polishing cloth is worn uniformly. Furthermore, foreign matter on or in the polishing cloth may be removed from the polishing cloth (;
It can be swept out.

〔実施例〕〔Example〕

第1図は本発明の一実施例である研磨装置の概略を示す
横断面図、第2図はウェハの平坦精度とはみ出し徽との
関係を示す説明図である。
FIG. 1 is a cross-sectional view schematically showing a polishing apparatus according to an embodiment of the present invention, and FIG. 2 is an explanatory diagram showing the relationship between wafer flatness accuracy and protrusion.

本実施例の研磨装置は1つの研磨チャックに1枚の半導
体ウェハ(薄板材)をたとえば真空吸着力などで保持す
る枚葉式@暦装置である。
The polishing apparatus of this embodiment is a single-wafer type @calendar apparatus in which one semiconductor wafer (thin plate material) is held in one polishing chuck by, for example, vacuum suction force.

この研磨装置は研磨定盤1を有し、この研磨定盤1はモ
ータ2により回転速度Nで矢印方向に強制回転される。
This polishing apparatus has a polishing surface plate 1, which is forcibly rotated by a motor 2 at a rotational speed N in the direction of the arrow.

この研磨定盤1の上面すなわち被研磨面には、研磨布3
が内径dを除いた部分に設けられている。
A polishing cloth 3 is placed on the upper surface of this polishing surface plate 1, that is, the surface to be polished.
is provided in a portion excluding the inner diameter d.

研磨定盤1の上方には、研磨チャック4が設けられ、薄
板材の一例としての半導体ウェハ5を研磨定盤1と対向
させて研磨チャック4に枚葉式に保持する。また、研磨
チャック4の研磨定盤1側には、半導体ウェハ5の真空
吸着用のパッド6およびガードリング7を有している。
A polishing chuck 4 is provided above the polishing surface plate 1, and a semiconductor wafer 5, which is an example of a thin plate, is held on the polishing chuck 4 in a single-wafer manner so as to face the polishing surface plate 1. Further, the polishing chuck 4 has a pad 6 and a guard ring 7 for vacuum suction of the semiconductor wafer 5 on the polishing surface plate 1 side.

研麿チ丁ツク4は摺い機構8を介し、モータ9により、
上記研磨定盤1と同一方向に回転速度nで強制回転され
る。また、本実施例の研磨チャック4は研磨定盤1に対
して水平方向に往復運動するようになっている。
The Kenmaro chichotsuk 4 is operated by a motor 9 via a printing mechanism 8.
It is forcibly rotated in the same direction as the polishing surface plate 1 at a rotational speed n. Further, the polishing chuck 4 of this embodiment is adapted to reciprocate in the horizontal direction with respect to the polishing surface plate 1.

さらに、研磨定盤1の上方には研磨剤を供給するための
ノズル10が垂下されており、研磨定盤1の中心および
外側より研磨剤が排液される。
Further, a nozzle 10 for supplying an abrasive is suspended above the polishing surface plate 1, and the abrasive is drained from the center and outside of the polishing surface plate 1.

次に、本実施例の作用について説明する。Next, the operation of this embodiment will be explained.

研磨される半導体ウェハ5は、研磨チャック4により、
各チャック4について1枚ずつ枚葉式に真空吸着などで
保持される。この半導体ウェハ5は、研磨チャック4を
モータ9で回転させることにより該研磨チャック4と共
に回転速度nで強制回転され、モータ2で回転速度Nで
強制回転されている研磨定盤l上の研磨布3の上に押圧
される。
The semiconductor wafer 5 to be polished is moved by the polishing chuck 4.
Each chuck 4 holds one sheet at a time by vacuum suction or the like. This semiconductor wafer 5 is forcibly rotated together with the polishing chuck 4 at a rotational speed n by rotating the polishing chuck 4 with a motor 9, and the polishing cloth on the polishing surface plate l which is forcibly rotated at a rotational speed N with the motor 2. Pressed on top of 3.

この状態で半導体ウェハ5は研磨チャック4と共に回転
速度Nとnで回転しながら研磨定盤1の半径方向に往復
運動する。これにより、半導体ウェハ5は研磨定盤1の
内側と外側でその一部分が研磨布3からはみ出しながら
研磨布3との摩擦によって研磨される。
In this state, the semiconductor wafer 5 reciprocates in the radial direction of the polishing surface plate 1 while rotating together with the polishing chuck 4 at rotational speeds N and n. As a result, the semiconductor wafer 5 is polished by friction with the polishing cloth 3, with parts of the semiconductor wafer 5 protruding from the polishing cloth 3 inside and outside the polishing surface plate 1.

その結果、本実施例においては、半導体ウェハ5は研磨
布3からはみ出した部分が研磨されないため、第2図の
ようにはみ出しilWの変化で凸型または凹型に研磨で
き、適当なはみ出し量Wを選ぶことで平坦精度良く研磨
できる。
As a result, in this embodiment, since the portion of the semiconductor wafer 5 that protrudes from the polishing cloth 3 is not polished, it can be polished into a convex or concave shape by changing the protrusion ilW as shown in FIG. By selecting the right type, you can polish with good flatness and precision.

以上本発明者によってなされた発明を実施例に基づき具
体的に説明したが、本発明は前記実施例に限定されるも
のではなく、その要旨を逸脱しない範囲で種々変更可能
であることはいうまでもない。
Although the invention made by the present inventor has been specifically explained above based on Examples, it goes without saying that the present invention is not limited to the Examples and can be modified in various ways without departing from the gist thereof. Nor.

たとえば、研磨チャック4は半導体ウェハ5の一部が研
磨定盤1または研磨布3の外側にはみ出るよう偏心回転
される構造としてもよい。
For example, the polishing chuck 4 may have a structure in which the polishing chuck 4 is rotated eccentrically so that a portion of the semiconductor wafer 5 protrudes outside the polishing surface plate 1 or the polishing cloth 3.

以上の説明では主として本発明者によってなされた発明
をその利用分野である半導体ウェハに適用した場合につ
いて説明したが、これに限定されるものではなく、たと
えば他の薄板材の如きウェハにも適用することができる
In the above explanation, the invention made by the present inventor is mainly applied to semiconductor wafers, which is its field of application, but it is not limited to this, and the invention can also be applied to wafers such as other thin plate materials. be able to.

〔発明の効果〕〔Effect of the invention〕

本願において開示される発明のうち代表的なものの概要
を簡単に説明すれば、次の通りである。
A brief overview of typical inventions disclosed in this application is as follows.

すなわち、半導体ウェハの研磨方法であって、各研磨チ
ャックに半導体ウェハを1枚ずつ保持し、その半導体ウ
ェハの一部を研磨定盤または研磨布から外側にはみ出さ
せた状態で研磨することにより、ウェハの外周部のブレ
をなくし、被研磨面の全体にわたって均一に、平坦精度
良く研磨することができる。
That is, a method for polishing semiconductor wafers, in which one semiconductor wafer is held in each polishing chuck, and a part of the semiconductor wafer is polished with a part of the semiconductor wafer protruding from the polishing surface plate or polishing cloth. It is possible to eliminate wobbling on the outer periphery of the wafer and to polish the entire surface to be polished uniformly and with high flatness accuracy.

また、本発明によれば、はみ出し量を変えることで凸形
状から凹形状に研磨でき、適切なはみ出し量を選択する
ことによって所望の平坦精度の高い研磨が可能となる。
Further, according to the present invention, by changing the amount of protrusion, it is possible to polish from a convex shape to a concave shape, and by selecting an appropriate amount of protrusion, it is possible to perform polishing with high desired flatness accuracy.

さらに、本発明によれば、ウェハが研磨チャックの水平
往復運動または偏心回転運動によって研磨布の外に出る
ことにより、研磨布の摩耗が均一になり、加えて研磨布
上あるいは研磨布内の異物が研磨布の外に掃き出される
ため、ウェハに傷をつけることなく研磨を行うことがで
きる。
Further, according to the present invention, the wafer is moved out of the polishing cloth by the horizontal reciprocating movement or eccentric rotational movement of the polishing chuck, so that the abrasion of the polishing cloth becomes uniform. Since the wafer is swept out of the polishing cloth, polishing can be performed without damaging the wafer.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例である研磨装置の概略を示す
横断面図、 第2図はウェハの平坦精度とはみ出し量との関係を示す
説明図である。
FIG. 1 is a cross-sectional view schematically showing a polishing apparatus according to an embodiment of the present invention, and FIG. 2 is an explanatory diagram showing the relationship between wafer flatness accuracy and protrusion amount.

Claims (1)

【特許請求の範囲】 1、半導体ウェハの研磨方法であって、各研磨チャック
に半導体ウェハを1枚ずつ保持し、その半導体ウェハの
一部を研磨定盤または研磨布から外側にはみ出させた状
態で研磨することを特徴とするウェハ研磨方法。 2、半導体ウェハを自転させながら前記研磨定盤の半径
方向に往復運動または偏心回転運動させることを特徴と
する請求項1記載のウェハ研磨方法。 3、半導体ウェハの研磨装置であって、所定の回転数で
所定の方向に水平面内で回転する研磨定盤と、この研磨
定盤上に設けられた研磨布と、半導体ウェハの被研磨面
が前記研磨布と接触するよう各々に半導体ウェハを1枚
ずつ保持し、前記研磨定盤と同一方向に所定の回転数で
回転され、前記研磨定盤の半径方向に往復運動可能また
は偏心回転可能である研磨チャックとからなることを特
徴とするウェハ研磨装置。
[Claims] 1. A method for polishing semiconductor wafers, in which one semiconductor wafer is held in each polishing chuck, with a portion of the semiconductor wafer protruding outward from the polishing surface plate or polishing cloth. A wafer polishing method characterized by polishing. 2. The wafer polishing method according to claim 1, wherein the polishing surface plate is reciprocated or eccentrically rotated in the radial direction while rotating the semiconductor wafer. 3. A polishing device for semiconductor wafers, which includes a polishing surface plate that rotates in a horizontal plane in a predetermined direction at a predetermined rotation speed, a polishing cloth provided on the polishing surface plate, and a surface to be polished of a semiconductor wafer. Each semiconductor wafer is held in contact with the polishing cloth, rotated in the same direction as the polishing surface plate at a predetermined rotation speed, and capable of reciprocating movement or eccentric rotation in the radial direction of the polishing surface plate. A wafer polishing device comprising a polishing chuck.
JP9550588A 1988-04-20 1988-04-20 Method and apparatus for wafer polishing Pending JPH01268032A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9550588A JPH01268032A (en) 1988-04-20 1988-04-20 Method and apparatus for wafer polishing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9550588A JPH01268032A (en) 1988-04-20 1988-04-20 Method and apparatus for wafer polishing

Publications (1)

Publication Number Publication Date
JPH01268032A true JPH01268032A (en) 1989-10-25

Family

ID=14139453

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9550588A Pending JPH01268032A (en) 1988-04-20 1988-04-20 Method and apparatus for wafer polishing

Country Status (1)

Country Link
JP (1) JPH01268032A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4125732A1 (en) * 1990-08-06 1992-02-13 Micron Technology Inc METHOD AND DEVICE FOR MECHANICAL PLANNING AND FINAL POINT DETERMINATION OF A SEMICONDUCTOR WAXER
US5429711A (en) * 1992-09-18 1995-07-04 Mitsubishi Materials Corporation Method for manufacturing wafer
US5783497A (en) * 1994-08-02 1998-07-21 Sematech, Inc. Forced-flow wafer polisher
EP0911115A1 (en) * 1992-09-24 1999-04-28 Ebara Corporation Polishing apparatus
US6332826B1 (en) 1997-11-21 2001-12-25 Ebara Corporation Polishing apparatus

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4125732A1 (en) * 1990-08-06 1992-02-13 Micron Technology Inc METHOD AND DEVICE FOR MECHANICAL PLANNING AND FINAL POINT DETERMINATION OF A SEMICONDUCTOR WAXER
DE4125732C2 (en) * 1990-08-06 2002-05-29 Micron Technology Inc Method and device for polishing a flat wafer
US5429711A (en) * 1992-09-18 1995-07-04 Mitsubishi Materials Corporation Method for manufacturing wafer
EP0911115A1 (en) * 1992-09-24 1999-04-28 Ebara Corporation Polishing apparatus
US5783497A (en) * 1994-08-02 1998-07-21 Sematech, Inc. Forced-flow wafer polisher
US6332826B1 (en) 1997-11-21 2001-12-25 Ebara Corporation Polishing apparatus
US6413146B1 (en) 1997-11-21 2002-07-02 Ebara Corporation Polishing apparatus
US6918814B2 (en) 1997-11-21 2005-07-19 Ebara Corporation Polishing apparatus
US7101255B2 (en) 1997-11-21 2006-09-05 Ebara Corporation Polishing apparatus

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