CN108091683A - 半导体功率器件的超结结构及其制作方法 - Google Patents
半导体功率器件的超结结构及其制作方法 Download PDFInfo
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- CN108091683A CN108091683A CN201711305322.7A CN201711305322A CN108091683A CN 108091683 A CN108091683 A CN 108091683A CN 201711305322 A CN201711305322 A CN 201711305322A CN 108091683 A CN108091683 A CN 108091683A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 30
- 238000002360 preparation method Methods 0.000 title description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 46
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 42
- 229920005591 polysilicon Polymers 0.000 claims abstract description 42
- 238000002347 injection Methods 0.000 claims abstract description 37
- 239000007924 injection Substances 0.000 claims abstract description 37
- 238000000407 epitaxy Methods 0.000 claims abstract description 28
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 17
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 37
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 36
- 239000002184 metal Substances 0.000 claims description 28
- 229910052751 metal Inorganic materials 0.000 claims description 28
- 229920002120 photoresistant polymer Polymers 0.000 claims description 24
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 150000002500 ions Chemical class 0.000 claims description 10
- 238000001039 wet etching Methods 0.000 claims description 9
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 claims description 4
- 230000000717 retained effect Effects 0.000 claims description 3
- 230000002035 prolonged effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 101
- 230000015556 catabolic process Effects 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 241001270131 Agaricus moelleri Species 0.000 description 1
- 230000002146 bilateral effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000002355 dual-layer Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201711305322.7A CN108091683B (zh) | 2017-12-11 | 2017-12-11 | 半导体功率器件的超结结构及其制作方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201711305322.7A CN108091683B (zh) | 2017-12-11 | 2017-12-11 | 半导体功率器件的超结结构及其制作方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108091683A true CN108091683A (zh) | 2018-05-29 |
CN108091683B CN108091683B (zh) | 2020-09-22 |
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Family Applications (1)
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CN201711305322.7A Active CN108091683B (zh) | 2017-12-11 | 2017-12-11 | 半导体功率器件的超结结构及其制作方法 |
Country Status (1)
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CN (1) | CN108091683B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108807184A (zh) * | 2018-06-25 | 2018-11-13 | 张帅 | 具有超级结结构的场效应晶体管及其制造方法 |
WO2020151087A1 (zh) * | 2019-01-21 | 2020-07-30 | 东南大学 | 一种低反向恢复电荷sj-vdmos器件 |
CN113113496A (zh) * | 2020-01-10 | 2021-07-13 | 苏州晶湛半导体有限公司 | 垂直型器件的制作方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020009832A1 (en) * | 2000-06-02 | 2002-01-24 | Blanchard Richard A. | Method of fabricating high voltage power mosfet having low on-resistance |
US20020070418A1 (en) * | 2000-12-07 | 2002-06-13 | International Rectifier Corporation | High voltage vertical conduction superjunction semiconductor device |
CN101872724A (zh) * | 2009-04-24 | 2010-10-27 | 上海华虹Nec电子有限公司 | 超级结mosfet的制作方法 |
US20130175607A1 (en) * | 2012-01-05 | 2013-07-11 | Tsung-Hsiung LEE | Semiconductor device and fabricating method thereof |
CN107342226A (zh) * | 2017-07-19 | 2017-11-10 | 无锡新洁能股份有限公司 | 超小单元尺寸纵向超结半导体器件的制造方法 |
-
2017
- 2017-12-11 CN CN201711305322.7A patent/CN108091683B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020009832A1 (en) * | 2000-06-02 | 2002-01-24 | Blanchard Richard A. | Method of fabricating high voltage power mosfet having low on-resistance |
US20020070418A1 (en) * | 2000-12-07 | 2002-06-13 | International Rectifier Corporation | High voltage vertical conduction superjunction semiconductor device |
CN101872724A (zh) * | 2009-04-24 | 2010-10-27 | 上海华虹Nec电子有限公司 | 超级结mosfet的制作方法 |
US20130175607A1 (en) * | 2012-01-05 | 2013-07-11 | Tsung-Hsiung LEE | Semiconductor device and fabricating method thereof |
CN107342226A (zh) * | 2017-07-19 | 2017-11-10 | 无锡新洁能股份有限公司 | 超小单元尺寸纵向超结半导体器件的制造方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108807184A (zh) * | 2018-06-25 | 2018-11-13 | 张帅 | 具有超级结结构的场效应晶体管及其制造方法 |
CN108807184B (zh) * | 2018-06-25 | 2021-01-05 | 济南安海半导体有限公司 | 具有超级结结构的场效应晶体管及其制造方法 |
WO2020151087A1 (zh) * | 2019-01-21 | 2020-07-30 | 东南大学 | 一种低反向恢复电荷sj-vdmos器件 |
CN113113496A (zh) * | 2020-01-10 | 2021-07-13 | 苏州晶湛半导体有限公司 | 垂直型器件的制作方法 |
Also Published As
Publication number | Publication date |
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CN108091683B (zh) | 2020-09-22 |
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Inventor after: Feng Lin Inventor after: Zhu Min Inventor before: Request for anonymity |
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TR01 | Transfer of patent right |
Effective date of registration: 20211216 Address after: 311200 room 603, Yuesheng International Center, ningwei street, Xiaoshan District, Hangzhou City, Zhejiang Province Patentee after: PN JUNCTION SEMICONDUCTOR (HANGZHOU) Co.,Ltd. Address before: 518000 Guangdong Shenzhen Longhua New District big wave street Longsheng community Tenglong road gold rush e-commerce incubation base exhibition hall E commercial block 706 Patentee before: Shenzhen Meliao Technology Transfer Center Co.,Ltd. |