CN108090301B - Crimping type IGBT device reliability calculation method considering fatigue life of internal material - Google Patents
Crimping type IGBT device reliability calculation method considering fatigue life of internal material Download PDFInfo
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Abstract
The invention relates to a method for calculating the reliability of a crimping type IGBT device considering the fatigue life of an internal material. Firstly, establishing a geometric model of a crimping type IGBT device, and setting finite element simulation conditions according to the operating conditions of the crimping type IGBT device; secondly, obtaining the fatigue strength born by each layer of material through simulation, extracting the fatigue attribute parameters of each layer of material, and calculating the cycle number of fatigue failure of each layer of material; and finally, calculating the fatigue life and the failure rate of each layer of material in the device, establishing a reliability calculation model of the single-chip crimping type IGBT device, and obtaining reliability indexes such as the failure rate of the crimping type IGBT device. The invention provides a method for calculating the reliability of a crimping type IGBT device considering the fatigue life of internal materials, which fully considers the influence of the property life of different materials in the crimping type IGBT device on the reliability of the device, improves the reliability calculation accuracy of the crimping type IGBT device, and can be widely used for the reliability design and weak link evaluation of the crimping type IGBT device.
Description
Technical Field
The invention belongs to the technical field of reliability of high-power semiconductor devices, and relates to a method for calculating the reliability of a compression joint type IGBT device considering the fatigue life of internal materials.
Background
The crimping type IGBT device is widely applied to high-voltage high-power electronic equipment because of the advantages of double-sided heat dissipation, failure short circuit and the like, and the high requirement on the design reliability of the crimping type IGBT device is certainly provided. However, different from a conventional welding type IGBT device, the crimping type IGBT device is complex in internal structure and different in material properties, and the interior of the crimping type IGBT device is mainly formed by crimping multiple materials such as a copper layer, a molybdenum layer, an IGBT chip and a silver sheet. The design reliability of the crimping type IGBT device is greatly different due to factors such as the performance and the size of materials of all layers in the device, and the service life of power electronic equipment is finally influenced. Therefore, how to accurately analyze the reliability of the crimping type IGBT device has important practical significance for mastering the weak links in the crimping type IGBT device and improving the reliability design level and the reliable operation level of power electronic equipment.
The reliability of the crimping type IGBT device is closely related to the fatigue life of the internal component materials of the crimping type IGBT device, the existing reliability analysis related to the crimping type IGBT device is mostly based on data statistics, the reliability analysis based on a physical model is rarely related, the reliability analysis related to the physical analysis is mostly only a chip, the fatigue life of other internal layers of materials is hardly related, and the fatigue life of the internal layers of materials of the device also influences the overall reliability level of the IGBT device to a great extent.
Disclosure of Invention
In view of this, the present invention provides a method for calculating reliability of a crimped IGBT device, which can evaluate the reliability of the crimped IGBT device more comprehensively and accurately.
In order to achieve the purpose, the invention provides the following technical scheme:
a method for calculating the reliability of a crimping type IGBT device considering the fatigue life of an internal material comprises the following steps:
s1: establishing a geometric model of the crimping type IGBT device, and setting finite element simulation conditions according to the operation condition of the crimping type IGBT device;
s2: obtaining the fatigue strength borne by each layer of material through simulation, extracting the fatigue attribute parameters of each layer of material, and calculating the cycle number of fatigue failure of each layer of material;
s3: calculating the fatigue life and the failure rate of each layer of material in the crimping type IGBT device, establishing a reliability calculation model of the crimping type IGBT device, and obtaining the reliability index of the crimping type IGBT device.
Further, in the step S1, the geometric model of the press-fit IGBT device includes a copper cover plate, a collector molybdenum layer, an IGBT chip, an emitter molybdenum layer, a silver gasket, and a copper pillar, which are sequentially stacked from top to bottom, and the copper cover plate, the collector molybdenum layer, the IGBT chip, the emitter molybdenum layer, the silver gasket, the copper pillar, and the gate spring are encapsulated by external pressure to form a single-chip press-fit IGBT device.
Further, step S1 specifically includes:
s11: setting comparison material parameters of materials of all layers, wherein the comparison material parameters comprise thermal expansion coefficients, Young modulus and Poisson ratio of a copper cover plate, a collector molybdenum layer, an IGBT chip, an emitter molybdenum layer, a silver gasket and a copper column;
s12: setting mechanical-thermal-electric physical field parameters and boundary conditions of the crimping type IGBT device according to the operation condition of the crimping type IGBT device;
s13: and carrying out finite element modeling grid subdivision on the crimping type IGBT device.
Further, in step S2, the number of cycles of fatigue failure of each layer of material is calculated as,
wherein N isfThe number of cycles of fatigue failure of the material under the action of long-term cyclic load, k is the influence coefficient of the aged material on the reliability of the IGBT device, sigmafIs the fatigue strength of the material, σcThe material is obtained by fitting the cyclic load experimental data of the material, wherein m is the model parameter and the tensile strength of the material is the cyclic load experimental data of the material.
Further, the fatigue life of each layer material in step S3 is:
ti＝Nf.i·T
wherein, tiIs the fatigue life of material i, Nf.iThe cycle number of fatigue failure of the material i under the action of long-term cyclic load, and T is the power cycle period of the device;
the failure rate of each layer material in step S3 is:
wherein λ isiIs the failure rate of material i.
Further, the reliability calculation model of the voltage-connected IGBT device in step S3 is:
λ＝∑λi
wherein, lambda is the failure rate of the crimping type IGBT device.
The invention has the beneficial effects that: according to the method, the material properties of a copper layer, a molybdenum layer, an IGBT chip and the like in the device and the operation condition of the device are fully considered, a finite element simulation model of the crimping type IGBT is built, and the reliability of the crimping type IGBT is favorably further researched; the failure cycle times, the fatigue life and the failure rate of each layer of material are obtained by extracting the fatigue strength and other fatigue attribute parameters borne by each layer of material, so that the reliability calculation accuracy of the crimping type IGBT device is greatly improved; by analyzing the reliability relation among all layers of materials of the crimping type IGBT device, the reliability index expression of the crimping type IGBT is obtained, the crimping type IGBT device reliability calculation method considering the fatigue life of the internal materials is formed, and the method can be widely used for reliability evaluation of the crimping type IGBT device with a packaging structure.
Drawings
In order to make the object, technical scheme and beneficial effect of the invention more clear, the invention provides the following drawings for explanation:
FIG. 1 is a structural diagram of a crimping type IGBT device;
fig. 2 is a flow chart of reliability evaluation of the crimp type IGBT device.
Detailed Description
Preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
Example 1:
fig. 1 is a structural diagram of a crimp type IGBT device, and fig. 2 is a flowchart for evaluating reliability of the crimp type IGBT device. As shown, wherein:
the method comprises the following steps:
1) establishing a geometric model of the crimping type IGBT device, and setting finite element simulation conditions according to the operation condition of the crimping type IGBT device;
2) obtaining the fatigue strength borne by each layer of material through simulation, extracting the fatigue attribute parameters of each layer of material, and calculating the cycle number of fatigue failure of each layer of material;
3) calculating the fatigue life and the failure rate of each layer of material in the device, establishing a reliability calculation model of the single-chip crimping type IGBT device, and obtaining reliability indexes such as the failure rate of the crimping type IGBT device.
The geometric model structure of the crimping type IGBT device comprises a copper cover plate 1, a collector electrode molybdenum layer 2, an IGBT chip 3, an emitter electrode molybdenum layer 4, a silver gasket 5 and a copper column 6. The copper cover plate 1, the collector molybdenum layer 2, the IGBT chip 3, the emitter molybdenum layer 4, the silver gasket 5, the copper column 6 and the grid spring are packaged through external pressure to form a single-chip crimping type IGBT device.
Finite element simulation of the crimping type IGBT device is set as follows:
1) setting relative material parameters of materials of each layer, including the thermal expansion coefficient, Young modulus and Poisson ratio of the copper cover plate 1, the collector molybdenum layer 2, the IGBT chip 3, the emitter molybdenum layer 4, the silver gasket 5 and the copper column 6;
2) setting mechanical-thermal-electric physical field parameters and boundary conditions of the crimping type IGBT device, such as clamp pressure, ambient temperature and the like according to the operation condition of the device;
3) carrying out finite element modeling grid subdivision on the crimping type IGBT device;
the cycle times of the fatigue failure of the material i of the crimping type IGBT device are as follows:
wherein N isfThe cycle number of fatigue failure of the material i under the action of long-term cyclic load, k is the influence coefficient of the aged material on the reliability of the IGBT device, and sigmafIs the fatigue strength of the material, σcThe material is obtained by fitting the cyclic load experimental data of the material, wherein m is the model parameter and the tensile strength of the material is the cyclic load experimental data of the material.
The fatigue life (year) of the material i of the crimping type IGBT device is as follows:
ti＝Nf.i·T
wherein the subscript i represents the constituent materials i, NfThe cycle number of the fatigue failure of the material i under the action of long-term cyclic load, and T is the power cycle period time of the device.
The failure rate (next/year) of the material i of the crimp type IGBT device is:
wherein the subscript i denotes the constituent material i, tiIs the fatigue life of material i.
Materials of all layers of the crimping type IGBT device are in a reliable series connection relationship, and the whole IGBT device fails due to failure of any layer of material. The failure rate (next/year) of the crimp type IGBT device is:
λ＝∑λi
wherein the subscript i denotes the constituent material i, Σ λiRepresenting the sum of the failure rates of all constituent materials.
Example 2:
a specific example of a press-fit IG is given belowThe BT device internal structure is shown in fig. 1. The IGBT device is internally composed of a copper cover plate 1, a collector electrode molybdenum layer 2, an IGBT chip 3, an emitter electrode molybdenum layer 4, a silver gasket 5 and a copper column 6, and the thermal expansion coefficients of the copper cover plate, the collector electrode molybdenum layer, the emitter electrode molybdenum layer, the silver gasket and the copper column are as follows in sequence: 17e-6K-1、4.8e-6K-1、2.6e-6K-1、4.8e-6K-1、18.9e-6K-1And 17e-6K-1The conductivity is as follows: 5.998e7S/m, 1.89e7S/m, 90.404S/m, 1.89e7S/m, 61.6e6S/m, and 5.998e 7S/m. The operating conditions of the device are as follows: the fixture pressure was 1200N, ambient temperature was 25 deg.C, and current was 50A. Specifically, the method for calculating the reliability of the crimping type IGBT device is described with reference to fig. 2, and specifically includes the following steps:
1) establishing a geometric model of the crimping type IGBT device, and setting finite element simulation conditions according to the operation condition of the crimping type IGBT device;
2) obtaining the fatigue strength borne by each layer of material through simulation, extracting the fatigue attribute parameters of each layer of material, and calculating the cycle number of fatigue failure of each layer of material;
3) calculating the fatigue life and the failure rate of each layer of material in the device, establishing a reliability calculation model of the single-chip crimping type IGBT device, and obtaining reliability indexes such as the failure rate of the crimping type IGBT device.
Fatigue strength sigma borne by copper cover plate 1, collector molybdenum layer 2, IGBT chip 3, emitter molybdenum layer 4, silver gasket 5 and copper column 6 of crimping type IGBT devicefSequentially comprises the following steps: 83.924MPa, 111.99MPa, 258.1MPa, 239.68MPa and 89.599 MPa. The influence coefficient k on the reliability of the IGBT device after aging is as follows in sequence: 29.9520, 5.0724, 17.4197, 166.2029, 738.4387 and 6937.7765. Tensile Strength σcSequentially comprises the following steps: 514MPa, 1150MPa, 1100MPa, 1150MPa, 33700MPa and 514 MPa. m is in turn: -0.07, -0.12, -0.02, -0.12, -0.14, -0.07.
The failure cycle times of the component materials of the crimping type IGBT device are as follows in sequence:
copper cover plate: n is a radical off。15.2527e +12 times
A collector electrode molybdenum layer: n is a radical off。21.3631e +9 times
An IGBT chip: n is a radical off。31.4461e +5 times
LaunchingAn extremely molybdenum layer: n is a radical off。44.2484e +7 times
Silver gasket: n is a radical off。51.6261e +18 times
Copper column: n is a radical off。64.7777e +14 times
Assuming that the power cycle period time of the IGBT device is 140s, the service lives (years) of the components of the crimp-type IGBT device are as follows:
copper cover plate: t is t116656183.15 years old (5.2527e +12) × 140/60/60/8760
A collector electrode molybdenum layer: t is t24322.473417 years old (1.3631e +9) × 140/60/60/8760
An IGBT chip: t is t30.458560056 years old (1.4461e +5) × 140/60/60/8760
An emitter molybdenum layer: t is t4134.7143811 years old (4.2484e +7) × 140/60/60/8760
Silver gasket: t is t55.15646e +12 years (1.6261e +18) × 140/60/60/8760
Copper column: t is t61515001549 years old (4.7777e +14) × 140/60/60/8760
The failure rate (times/year) of each layer of the crimping type IGBT device is as follows:
copper cover plate: lambda [ alpha ]11/16656183.15 ═ 6.00378e-08 times/year
A collector electrode molybdenum layer: lambda [ alpha ]21/4322.473417-0.000231349 times/year
An IGBT chip: lambda [ alpha ]31/0.458560056-2.180739442 times/year
An emitter molybdenum layer: lambda [ alpha ]41/134.7143811-0.007423112 times/year
Silver gasket: lambda [ alpha ]51/5.15646e +12 ═ 1.93932e-13 times/year
Copper column: lambda [ alpha ]61/1515001549 ═ 6.60065e-10 times/year
Materials of all layers of the crimping type IGBT device are in a reliable series connection relationship, and the whole IGBT device fails due to failure of any layer of material. The failure rate (next/year) of the crimp type IGBT device is:
λ＝λ1+λ2+λ3+λ4+λ5+λ6＝2.188393964 times/year
Therefore, by adopting the method for calculating the reliability of the crimping type IGBT device considering the fatigue life of the internal material, the attributes of the internal copper layer, the molybdenum layer, the IGBT chip and other component materials of the device and the operation condition of the device can be fully considered, and the accuracy of the reliability calculation of the crimping type IGBT device is greatly improved; by analyzing the reliability relation among all layers of materials of the crimping type IGBT device, the reliability index expression of the crimping type IGBT is further obtained, and the method can be widely used for reliability evaluation of the crimping type IGBT device with a packaging structure.
Finally, it is noted that the above-mentioned preferred embodiments illustrate rather than limit the invention, and that, although the invention has been described in detail with reference to the above-mentioned preferred embodiments, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the scope of the invention as defined by the appended claims.
Claims (1)
1. A method for calculating reliability of a compression joint type IGBT device considering fatigue life of internal materials is characterized by comprising the following steps: the method comprises the following steps:
s1: establishing a geometric model of the crimping type IGBT device, and setting finite element simulation conditions according to the operation condition of the crimping type IGBT device; the structure of the geometric model of the crimping type IGBT device comprises a copper cover plate, a collector electrode molybdenum layer, an IGBT chip, an emitter electrode molybdenum layer, a silver gasket and a copper column which are sequentially stacked from top to bottom, and the copper cover plate, the collector electrode molybdenum layer, the IGBT chip, the emitter electrode molybdenum layer, the silver gasket, the copper column and a grid spring are packaged through external pressure to form the single-chip crimping type IGBT device;
step S1 specifically includes:
s11: setting comparison material parameters of materials of all layers, wherein the comparison material parameters comprise thermal expansion coefficients, Young modulus and Poisson ratio of a copper cover plate, a collector molybdenum layer, an IGBT chip, an emitter molybdenum layer, a silver gasket and a copper column;
s12: setting mechanical-thermal-electric physical field parameters and boundary conditions of the crimping type IGBT device according to the operation condition of the crimping type IGBT device;
s13: carrying out finite element modeling grid subdivision on the crimping type IGBT device;
s2: obtaining the fatigue strength born by each layer of material through simulation, extracting the fatigue attribute parameters of each layer of material, and calculating the cycle number of fatigue failure of each layer of material, wherein the cycle number is as follows:
wherein N isfThe number of cycles of fatigue failure of the material under the action of long-term cyclic load, k is the influence coefficient of the aged material on the reliability of the IGBT device, sigmafIs the fatigue strength of the material, σcThe material is obtained by fitting the cyclic load experimental data of the material, wherein m is the tensile strength of the material and is a model parameter;
s3: calculating the fatigue life and the failure rate of each layer of material in the crimping type IGBT device, establishing a reliability calculation model of the crimping type IGBT device, and obtaining the reliability index of the crimping type IGBT device;
the fatigue life of each layer of material is as follows:
ti＝Nf.i·T，
wherein, tiIs the fatigue life of material i, Nf.iThe cycle number of fatigue failure of the material i under the action of long-term cyclic load, and T is the power cycle period of the device;
the failure rate of each layer of material is as follows:
wherein λ isiIs the failure rate of material i;
the reliability calculation model of the crimping type IGBT device is as follows:
λ＝∑λi，
wherein, lambda is the failure rate of the crimping type IGBT device.
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| CN109885884B (en) * | 2019-01-21 | 2021-11-02 | 广东电网有限责任公司广州供电局 | IGBT module fatigue analysis processing method and semiconductor device processing method |
| CN112487651A (en) * | 2020-12-07 | 2021-03-12 | 广东电网有限责任公司江门供电局 | Method for detecting service life of power device of photovoltaic converter |
| CN112818622B (en) * | 2021-01-06 | 2022-06-03 | 武汉大学 | Multi-chip parallel IGBT module reliability comprehensive evaluation method and system |
| CN115099520B (en) * | 2022-07-15 | 2024-05-24 | 兰州交通大学 | Chip life prediction method under different position faults of crimping IGBT module |
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