CN109885884B - IGBT module fatigue analysis processing method and semiconductor device processing method - Google Patents
IGBT module fatigue analysis processing method and semiconductor device processing method Download PDFInfo
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- CN109885884B CN109885884B CN201910053020.8A CN201910053020A CN109885884B CN 109885884 B CN109885884 B CN 109885884B CN 201910053020 A CN201910053020 A CN 201910053020A CN 109885884 B CN109885884 B CN 109885884B
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Abstract
The application relates to a fatigue analysis processing method for an IGBT module, which comprises the following steps: establishing a finite element model of the IGBT module; electrical-thermal-structural coupling calculations; drawing a strain fatigue curve; calculating fatigue damage values of all units of the IGBT module; determining a finite element model of the next power cycle; and establishing a state evaluation model of the IGBT module. Therefore, the finite element model of the IGBT module is skillfully designed, and the accumulated damage value is calculated and analyzed, so that the fatigue failure mechanism of the IGBT module can be accurately obtained, the defect that the traditional numerical analysis method cannot simulate the physical characteristics during the fatigue crack propagation period is overcome, the problems that the test method is high in cost and difficult to deeply research the fatigue characteristics of the whole service life of the module are solved, the crack initiation period and the crack propagation period of the fatigue failure of the IGBT module are comprehensively considered, and the accurate simulation analysis of the fatigue of the whole service life of the IGBT module is realized.
Description
Technical Field
The application relates to the field of IGBT module fatigue failure, in particular to an IGBT module fatigue analysis processing method and a semiconductor device processing method, which can also be called as an IGBT module full-life fatigue analysis processing method and a semiconductor device fatigue analysis replacement method.
Background
In recent years, the widespread use of Insulated Gate Bipolar Transistors (IGBTs) and related modules has brought power electronics technology into a new era. With the continuous improvement of the current-carrying density and the voltage level of the IGBT module, the loss is rapidly increased, the volume is relatively reduced, and the electrical, mechanical and thermal loads borne by the module are heavier and heavier. Statistically, 49% of device failures are associated with thermal problems, while the form of thermal failure under power cycling is fatigue failure of the bonding wires. Therefore, the research on the fatigue failure problem of the IGBT module is of great engineering significance.
According to the fatigue life theory, the failure fatigue period of the IGBT module can be divided into: in order to research the fatigue failure mechanism of the IGBT module, a plurality of related researches are carried out at present in the crack initiation period and the crack propagation period, but the fatigue failure mechanism of the IGBT module cannot be comprehensively and accurately researched, and the defects of the methods are as follows:
(1) analysis according to an analytic method of a fatigue life statistical theory:
this type of method is called analytical method and it is believed that the failure of an IGBT module is related to junction temperature, time, frequency, average value, etc. Usually, a statistical counting method is adopted to extract temperature amplitude cycle times and mean cycle times, then, a related damage accumulation theory is applied to calculate the damage degree and the service life of an offline power device, and then, the state of the IGBT module is evaluated according to the service life.
(2) Fatigue failure analysis method based on multi-physical-field coupling analysis
The method researches the multi-physical field characteristics in the module operation process through the electro-thermal-structure multi-physical field calculation, further predicts the fatigue life of the module based on the stress strain result, and further evaluates the fatigue accumulated damage of the module, however, the method mainly focuses on the crack germination stage, does not consider the influence of crack propagation on the physical characteristics, does not analyze the fatigue crack propagation period related to the module failure information, and therefore, the fatigue failure mechanism of the module is difficult to comprehensively research.
(3) Accelerated fatigue failure test
The method mainly adopts an experimental method at present for researching the fatigue crack propagation of the IGBT module, utilizes an accelerated fatigue test to research the failure of the IGBT module, obtains a failure sample of the IGBT module under the action of power cycle through the test, and then observes the fatigue damage of materials of each part of the module under a microscope.
Disclosure of Invention
Accordingly, there is a need for a method for analyzing and processing fatigue of an IGBT module and a method for processing a semiconductor device.
A fatigue analysis processing method for an IGBT module comprises the following steps:
step S1, establishing a finite element model of the IGBT module: establishing a geometric model of the IGBT module according to the actual size of the IGBT module, and carrying out mesh subdivision on the geometric model to obtain a finite element model of the IGBT module;
step S2, electro-thermal-structural coupling calculation: calculating the distribution of thermal stress and strain generated by the IGBT module under power circulation through electric-thermal-structure coupling according to the finite element model, and recording the distribution result;
step S3, drawing a strain fatigue curve: performing a fatigue life test on a material standard part of each part of the IGBT module to obtain a relation between alternating strain borne by the part and the cycle frequency of fracture as a strain fatigue curve;
step S4, calculating a fatigue damage value of each cell of the IGBT module: according to the strain fatigue curve, calculating a fatigue damage value of the unit subjected to multiple cycles under the action of multiple strain levels, and determining an accumulated damage value of the unit according to the fatigue damage value;
step S5, determining a finite element model of the next power cycle: judging whether the units fail according to the accumulated damage values, continuously determining a new IGBT module finite element model according to the units which do not fail, and returning to continuously execute the step S2 until all the units fail;
step S6, establishing a state evaluation model of the IGBT module: and establishing a state evaluation model of the full-life fatigue failure of the IGBT module according to the failure condition of each unit and the distribution result obtained by the electric-thermal-structure coupling calculation.
According to the IGBT module fatigue analysis processing method, the finite element model of the IGBT module is skillfully designed, and accumulated damage values are calculated and analyzed according to the finite element model, so that the fatigue failure mechanism of the IGBT module can be accurately obtained, the defect that the traditional numerical analysis method cannot simulate the physical characteristics during the fatigue crack propagation period is overcome, the problems that the test method is high in cost and the fatigue characteristics of the whole service life of the module are difficult to deeply research are solved, the crack initiation period and the crack propagation period of the fatigue failure of the IGBT module are comprehensively considered, and the accurate simulation analysis of the fatigue of the whole service life of the IGBT module is realized.
In one embodiment, in step S1, when the geometric model is subjected to mesh segmentation, the geometric model is subjected to encryption mesh segmentation at a position where a crack may occur.
In one embodiment, the geometric model is mesh-split based on historical data such that a possible crack is located in a mesh.
In one embodiment, in step S2, a power cycle load is applied, and the distribution of thermal stress and strain generated by the IGBT module under the power cycle is calculated through the electro-thermal-structure coupling.
In one embodiment, in step S3, the strain fatigue curve is obtained by performing a fatigue life test on the IGBT module material to obtain the different alternating strains that the component is subjected to, and the corresponding fracture times, and performing data fitting.
In one embodiment, in step S3, the strain-fatigue curve is further modified according to the machining process of the target working environment.
In one embodiment, in step S4, the life-cycle fatigue is divided into a fatigue crack initiation stage and a fatigue crack propagation stage according to the critical fatigue damage, and the stage where the cell is located is determined by using the cumulative damage value of 1 as a boundary point of the two stages.
In one embodiment, in step S5, the live-dead cell technique is used to mark whether the cell has failed.
In one embodiment, in step S6, the operation strategy of the IGBT module is also set or adjusted according to the state evaluation model.
A semiconductor device processing method is realized by adopting any one of the IGBT module fatigue analysis processing methods, the operation strategy of the semiconductor device is set according to the state evaluation model, and the semiconductor device comprises an IGBT, an MOSFET tube, a thyristor and/or a diode device.
Drawings
Fig. 1 is a schematic flow chart according to an embodiment of the present application.
Fig. 2 is a schematic flow chart of another embodiment of the present application.
Fig. 3 is a schematic diagram of a simulation model and a finite element model of an IGBT module according to another embodiment of the present application.
Fig. 4 is a schematic diagram of the temperature distribution of the IGBT module at 16s according to another embodiment of the present application.
Fig. 5 is a schematic diagram of the potential distribution of the IGBT module at 16s according to another embodiment of the present application.
Fig. 6 is a schematic diagram of thermal stress distribution of an IGBT at 16s according to another embodiment of the present application.
Fig. 7 is a schematic diagram of equivalent plastic deformation of a 16s bonding wire according to another embodiment of the present application.
FIG. 8 is a schematic diagram illustrating an aluminum substrate failure after 10000 power cycles in accordance with another embodiment of the present application.
FIG. 9 is a schematic diagram illustrating an aluminum substrate failure after 12500 power cycles according to another embodiment of the present application.
FIG. 10 is a schematic diagram illustrating an aluminum substrate failure after 13200 power cycles in accordance with another embodiment of the present invention.
FIG. 11 is a schematic diagram illustrating an aluminum substrate failure after 13700 power cycles in accordance with another embodiment of the present application.
Fig. 12 is a graph illustrating potential variation curves for different cycle numbers according to another embodiment of the present disclosure.
FIG. 13 is a graph illustrating temperature variation curves for different cycle numbers according to another embodiment of the present disclosure.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present application more comprehensible, embodiments accompanying the present application are described in detail below with reference to the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application. This application is capable of embodiments in many different forms than those described herein and that modifications may be made by one skilled in the art without departing from the spirit and scope of the application and it is therefore not intended to be limited to the specific embodiments disclosed below.
It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "left," "right," and the like as used herein are for illustrative purposes only and do not represent the only embodiments.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
The application provides a fatigue analysis processing method of an IGBT module, which can also be called as a fatigue analysis method of the whole service life of the IGBT module, solves the defects that the traditional numerical analysis method can not simulate the physical characteristics during the fatigue crack propagation period, overcomes the problems that the test method is high in cost and difficult to deeply research the fatigue characteristics of the whole service life of the module, and comprehensively considers the crack initiation period and the crack propagation period of the fatigue failure of the IGBT module, wherein in one embodiment, as shown in figure 1, the fatigue analysis processing method of the IGBT module comprises the following steps: step S1, establishing a finite element model of the IGBT module: establishing a geometric model of the IGBT module according to the actual size of the IGBT module, and carrying out mesh subdivision on the geometric model to obtain a finite element model of the IGBT module; step S2, electro-thermal-structural coupling calculation: calculating the distribution of thermal stress and strain generated by the IGBT module under power circulation through electric-thermal-structure coupling according to the finite element model, and recording the distribution result; step S3, drawing a strain fatigue curve: performing a fatigue life test on a material standard part of each part of the IGBT module to obtain a relation between alternating strain borne by the part and the cycle frequency of fracture as a strain fatigue curve; step S4, calculating a fatigue damage value of each cell of the IGBT module: according to the strain fatigue curve, calculating a fatigue damage value of the unit subjected to multiple cycles under the action of multiple strain levels, and determining an accumulated damage value of the unit according to the fatigue damage value; step S5, determining a finite element model of the next power cycle: judging whether the units fail according to the accumulated damage values, continuously determining a new IGBT module finite element model according to the units which do not fail, and returning to continuously execute the step S2 until all the units fail; step S6, establishing a state evaluation model of the IGBT module: and establishing a state evaluation model of the full-life fatigue failure of the IGBT module according to the failure condition of each unit and the distribution result obtained by the electric-thermal-structure coupling calculation. According to the IGBT module fatigue analysis processing method, the finite element model of the IGBT module is skillfully designed, and accumulated damage values are calculated and analyzed according to the finite element model, so that the fatigue failure mechanism of the IGBT module can be accurately obtained, the defect that the traditional numerical analysis method cannot simulate the physical characteristics during the fatigue crack propagation period is overcome, the problems that the test method is high in cost and the fatigue characteristics of the whole service life of the module are difficult to deeply research are solved, the crack initiation period and the crack propagation period of the fatigue failure of the IGBT module are comprehensively considered, and the accurate simulation analysis of the fatigue of the whole service life of the IGBT module is realized.
In one embodiment, the fatigue analysis processing method for the IGBT module comprises part or all of the following steps; namely, the IGBT module fatigue analysis processing method comprises the following steps of partial technical features or all technical features.
In one embodiment, the IGBT module fatigue analysis processing method comprises the following steps: establishing a finite element model of the IGBT module; electrical-thermal-structural coupling calculations; drawing a corrected strain fatigue curve (epsilon-N curve); calculating a fatigue damage value of the unit; determining a finite element model of the next power cycle; and restarting the electric-thermal-structure coupling calculation, and repeating the calculation steps to analyze the change rule of the physical quantity of the IGBT module under different cracks, so as to simulate the fatigue characteristic of the whole service life of the IGBT module, further establish an evaluation model of the IGBT module and formulate an operation strategy. In one embodiment, the IGBT module fatigue analysis processing method comprises the following stepsThe method comprises the following steps: step S1, establishing a finite element model of the IGBT module: establishing a geometric model of the module according to the actual size of the IGBT module, and obtaining a finite element model of the IGBT through mesh division; step S2, electro-thermal-structural coupling calculation: calculating the distribution of thermal stress/strain generated by the module under the power cycle through the electro-thermal-structure coupling; step S3, drawing a corrected strain fatigue curve (epsilon-N curve): performing a fatigue life test on an IGBT module material to obtain a relation between alternating strain borne by a component and a cycle frequency of fracture, namely a basic epsilon-N curve, and correcting the basic epsilon-N curve by considering process treatment made by actual processing on the basis to obtain a corrected epsilon-N curve; step S4, calculating a fatigue damage value of the cell: according to the corrected epsilon-N curve and based on Miner linear accumulated damage theory, the strain level epsilon can be determinediCumulative damage under action is as follows: the component is subjected to niInjury of the subcirculation is Di＝ni/Ni. If at k strain levels εiUnder the action of niFor the second cycle, the fatigue damage for each cell can then be determined as follows:
if N is 0, D is 0, the member has no fatigue damage, the physical properties of the units are not changed, and if N is N, D is 1, the local units fail, and the crack extension period is entered; step S5, determining a finite element model of the next power cycle: and judging whether the unit fails according to the method in the step 4), wherein the failed unit is described by killing the unit, and the unit which does not reach the critical damage is the living unit. A new IGBT module finite element model can be determined through a living and dead unit technology, and the crack is expanded in the next step; step S6, restart electrical-thermal-structural coupling calculation: and (4) performing electric-thermal-structure coupling calculation under a new finite element model, and repeating the steps from S4 to S5 to analyze the change rule of the physical quantity of the IGBT module under different cracks, so as to simulate the full-life fatigue characteristic of the IGBT module, further establish an evaluation model of the IGBT module and formulate an operation strategy. The IGBT module fatigue analysis processing method skillfully establishes the limit according to the target geometric parameters and the working conditionsThe meta-model carries out electric-thermal-structure coupling calculation, calculates the accumulated damage value of the analysis unit according to the calculated accumulated damage value, and researches the change rule of related physical parameters, so that the fatigue failure mechanism of the IGBT module can be accurately obtained, the defects that the traditional numerical analysis method cannot simulate the physical characteristics during the fatigue crack propagation period are overcome, the problems that the test method is high in cost and difficult to deeply research the fatigue characteristics of the whole service life of the module are solved, the crack initiation period and the crack propagation period of the fatigue failure of the IGBT module are comprehensively considered, and the accurate simulation analysis of the fatigue of the whole service life of the IGBT module is realized.
In one embodiment, as shown in fig. 2, the method for analyzing and processing fatigue of the IGBT module includes the following steps: starting; establishing a finite element model of the IGBT module; total fatigue life N with applied power cycle loadf＝Nf+ 1; electrical-thermal-structural coupling calculations; and calculating the damage value of the unit through electric-thermal-structure coupling calculation, judging whether the unit exceeds the critical fatigue damage, if so, killing the failed unit, further judging whether the device fails, if so, ending, and otherwise, returning to continuously apply the power cycle load. And judging whether the unit exceeds the critical fatigue damage or not, and returning to continuously apply the power cycle load if the unit does not exceed the critical fatigue damage. Analyzing and analyzing the change rule of the related parameters through electric-thermal-structure coupling calculation; and establishing an evaluation model of the IGBT module. And determining a strain fatigue curve by adopting a low-cycle fatigue test, and calculating the damage value of the unit together by matching with the electric-thermal-structure coupling calculation.
In one embodiment, the method for analyzing and processing the fatigue of the IGBT module includes step S1 of establishing a finite element model of the IGBT module: establishing a geometric model of the IGBT module according to the actual size of the IGBT module, and carrying out mesh subdivision on the geometric model to obtain a finite element model of the IGBT module; in one embodiment, in step S1, when the geometric model is subjected to mesh segmentation, the geometric model is subjected to encryption mesh segmentation at a position where a crack may occur. In one embodiment, the geometric model is mesh-split based on historical data such that a possible crack is located in a mesh. Further, when the finite element model of the IGBT module is established, the local region of the geometric model should be divided by encryption, especially at a position where a crack may occur, so that when a subsequent step, such as step S5, is performed, it is ensured that the crack span is not too large, and the accuracy of the simulation is improved. In one embodiment, establishing the geometric model of the IGBT module according to the actual size of the IGBT module includes establishing the geometric model of the IGBT module according to the actual size, the geometric parameters, and the operating conditions of the IGBT module.
In one embodiment, a geometric model of the IGBT module is built based on the target geometric parameters. In one embodiment, the mesh generation of the geometric model includes: the geometric model is gridded so that the grid density is high at the positions where cracks may occur. Due to the design, the grid can reflect the possible crack condition practically, so that the accuracy of simulation is improved, and further the accumulated damage value of the unit determined according to the fatigue damage value in the subsequent step can reflect the target fatigue damage more accurately. At the moment, encryption processing is not needed for the position with little field quantity change, so that the computing resource is saved.
In one embodiment, the IGBT module fatigue analysis processing method includes step S2, electrical-thermal-structure coupling calculation: calculating the distribution of thermal stress and strain generated by the IGBT module under power circulation through electric-thermal-structure coupling according to the finite element model, and recording the distribution result; in one embodiment, in step S2, a power cycle load is applied, and the distribution of thermal stress and strain generated by the IGBT module under the power cycle is calculated through the electro-thermal-structure coupling. In one embodiment, an electro-thermal-structural coupling calculation is performed, comprising: and applying load, and calculating the distribution of thermal stress and strain generated by the IGBT module through electric-thermal-structure coupling. The specific applied load and electro-thermal-structural coupling calculation methods may be implemented using conventional techniques, and are not intended to be within the scope of the present application, which is the only technique utilized by the present application and its various embodiments. In one embodiment, an electro-thermal-structural coupling calculation is performed, comprising: applying power cycle load, calculating the distribution of thermal stress and strain generated by the IGBT module through electric-thermal-structure coupling, and obtaining other relevant physical parameters, such as potential, temperature and the like, for representing the internal damage state.
In one embodiment, the IGBT module fatigue analysis processing method includes step S3, drawing a strain fatigue curve: performing a fatigue life test on a material standard part of each part of the IGBT module to obtain a relation between alternating strain borne by the part and the cycle frequency of fracture as a strain fatigue curve; that is, step S3 plots the strain fatigue curve of each component of the IGBT module. In one embodiment, in step S3, the strain fatigue curve is obtained by performing a fatigue life test on the IGBT module material to obtain the different alternating strains that the component is subjected to, and the corresponding fracture times, and performing data fitting. In one embodiment, in step S3, the strain-fatigue curve is further modified according to the machining process of the target working environment. In one embodiment, in step S3, a fatigue life test is performed on a material standard part of each component of the IGBT module, a relationship between alternating strain borne by the component and a cycle number of fracture is obtained as a strain fatigue curve, and the strain fatigue curve is further corrected according to a machining process of a target working environment, so as to obtain a corrected strain fatigue curve. In one embodiment, the times required by the standard part to break under different strains are obtained through a strain fatigue test of the material, a fatigue curve of the material can be obtained by fitting data, and the fatigue curve obtained through the test is corrected to a certain extent in consideration of the difference between each material of the IGBT module and the standard part under actual operation, so that the corrected strain fatigue curve is obtained.
In one embodiment, the strain fatigue curve is plotted, i.e., the strain fatigue curve is generated; in one of the embodiments, a strain fatigue curve is plotted: the method comprises the steps of carrying out fatigue life tests on material standard parts of all parts of the IGBT module to obtain the relation between alternating strain borne by the parts and the cycle frequency of fracture, and drawing or generating a strain fatigue curve according to the relation between the alternating strain borne by the parts and the cycle frequency of fracture. Further, in one embodiment, a strain fatigue curve is generated by performing a fatigue life test on each material standard of the IGBT module; in one embodiment, generating a strain fatigue curve comprises: the method comprises the steps of obtaining the times required by breakage of a material standard part under different strains through a strain fatigue test of the material standard part, fitting data to obtain a fatigue curve of the material standard part, correcting the fatigue curve obtained through the test to a certain extent by considering the difference between the material standard parts of the IGBT module under actual operation to obtain a corrected strain fatigue curve, and taking the corrected strain fatigue curve as the basis for calculation of the subsequent steps. Wherein the strain fatigue test is carried out on a fatigue machine by standard parts, the standard parts are distinguished from the parts, and the parts can be provided with one or more standard parts, namely material standard parts.
In one embodiment, the method for analyzing and processing the fatigue of the IGBT module includes step S4, calculating a fatigue damage value of each unit of the IGBT module: according to the strain fatigue curve, calculating a fatigue damage value of the unit subjected to multiple cycles under the action of multiple strain levels, and determining an accumulated damage value of the unit according to the fatigue damage value; in one embodiment, calculating the fatigue damage value of the cell comprises: and calculating the fatigue damage value of the unit subjected to multiple cycles under the action of multiple strain levels according to the strain fatigue curve after the correction treatment. Further, in one embodiment, the fatigue damage value of the unit is calculated based on Miner's linear accumulated damage theory and according to the strain fatigue curve after the correction process. Further, in one embodiment, fatigue damage values for the unit subjected to multiple cycles at multiple strain levels are calculated based on Miner's linear cumulative damage theory. In one embodiment, in step S4, the life-cycle fatigue is divided into a fatigue crack initiation stage and a fatigue crack propagation stage according to the critical fatigue damage, and the stage where the cell is located is determined by using the cumulative damage value of 1 as a boundary point of the two stages. In one embodiment, the life-cycle fatigue is divided into two phases by the fatigue cumulative damage value: and in the fatigue crack initiation stage and the fatigue crack propagation stage, based on a Miner linear accumulated damage theory, the accumulated damage D of each unit is 1 as a dividing point of the two stages, and the accumulated damage value of each unit can be determined through the electric-thermal-structure coupling calculation result and the cycle number. In one embodiment, the IGBT module fatigue analysis processing method uses a Miner linear accumulated damage theory to use a unit accumulated damage D-1 as a dividing point of two stages, and the accumulated damage value of each unit can be determined according to the electric-thermal-structure coupling calculation result and the cycle number. When the accumulated damage of part of units is more than or equal to 1, the crack is expanded in a crack expansion period, the crack expansion is represented by a life-dead unit technology, the change of physical quantity in the whole life fatigue process of the module is calculated and analyzed by combining multiple physical fields, the defects of the prior art are overcome, the change of physical parameters in the whole fatigue life of the IGBT module is simulated, and therefore the accurate simulation analysis of the whole life fatigue of the IGBT module is realized.
In practical application, the Meinner theory considers that the fatigue failure of the material is caused by the continuous action of cyclic load, the damage is generated and is continuously accumulated; the net work W absorbed as fatigue damage accumulates to failure is independent of the history of the fatigue load and the degree of fatigue damage of a material is proportional to the number of stress cycles. Based on Miner linear accumulated damage theory, strain level epsilon can be determinediCumulative damage under action is as follows: the component is subjected to niInjury of the subcirculation is Di＝ni/Ni. If at k strain levels εiUnder the action of niFor the second cycle, the fatigue damage for each cell can then be determined as follows:
when the value of D is equal to 1, the evaluated object is considered to start to be damaged, and the element which is the most dangerous element in the finite element model fails firstly. That is, whether a cell fails is determined according to whether the damage value of the cell is greater than 1, the failed cell is described by killing the cell, and the cell that does not reach the critical damage is a live cell. And determining a new IGBT module finite element model by using a living and dead unit technology, and carrying out next-step crack propagation.
In one embodiment, the method for analyzing and processing the fatigue of the IGBT module includes step S5, determining a finite element model of the next power cycle: judging whether the units fail according to the accumulated damage values, continuously determining a new IGBT module finite element model according to the units which do not fail, and returning to continuously execute the step S2 until all the units fail; in one embodiment, in step S4 or step S5, the cell is marked as dead or dead using dead cell technology. In one embodiment, whether the unit fails or not is described by a life-death unit technology, the unit with D larger than or equal to 1 is killed, the killed unit is just the rigidity multiplied by a small coefficient and does not influence the calculation result any more, and the unit with D smaller than 1 is considered to have the unchanged characteristic and generate the life unit. Thus, finite element models under different cracks can be obtained. According to the design, electro-thermal-structure coupling calculation is carried out under a new finite element model, the change rule of the physical quantity of the IGBT module under different cracks can be analyzed by repeating the steps until the complete failure of the device is determined, the full-life fatigue characteristic of the IGBT module is simulated, and then a state evaluation model of the module is established. Therefore, fatigue crack initiation and crack propagation characteristics of the IGBT module can be simulated, failure mechanisms in the fatigue whole-life process of the module can be accurately researched, the change rule of physical quantity of the IGBT module in a whole-life fatigue cycle is analyzed, a fatigue failure state evaluation method of the IGBT module is established according to the change rule, safe and stable operation of the IGBT module is realized, a maintenance strategy is formulated, and safe operation of equipment is ensured. In one embodiment, for a running device, the operating environment parameters may be adjusted to enable the IGBT module to support longer or more times until a safe stop; for the equipment which is about to fail, the IGBT module can be replaced, and the trouble exists.
In one embodiment, the method for analyzing and processing the fatigue of the IGBT module includes step S6, establishing a state evaluation model of the IGBT module: and establishing a state evaluation model of the full-life fatigue failure of the IGBT module according to the failure condition of each unit and the distribution result obtained by the electric-thermal-structure coupling calculation. In one embodiment, based on the new finite element model obtained in step S5, the electrical-thermal-structural coupling calculation is restarted to obtain physical parameters under crack propagation, and a state evaluation model of the IGBT module is established accordingly. In one embodiment, in step S6, the operation strategy of the IGBT module is also set or adjusted according to the state evaluation model. In one embodiment, in step S6, a state evaluation model of the IGBT module is established: and establishing a state evaluation model of the full-life fatigue failure of the IGBT module according to the failure condition of each unit and the distribution result obtained by the electric-thermal-structure coupling calculation, and setting or adjusting the operation strategy of the IGBT module according to the state evaluation model. In one embodiment, in step S6, the IGBT module is further set or adjusted according to the state estimation model. In one embodiment, the method for analyzing and processing fatigue of the IGBT module further includes the steps of: and replacing the IGBT module according to the state evaluation model.
In one embodiment, after step S6, the method for analyzing and processing fatigue of IGBT module further includes: and adjusting or replacing the IGBT module according to the state evaluation model of the IGBT module. In one embodiment, according to physical parameters and an evaluation model in the operation of the IGBT module, what state the IGBT module is in is evaluated, and the IGBT module is adjusted or replaced, including adjusting the operating environment of the IGBT module or replacing the IGBT module on the premise of safe use. In one embodiment, the IGBT modules are adjusted or replaced one, two, three, five, ten, twenty, fifty, one hundred, two hundred, five hundred, or one thousand times in advance. In one embodiment, the IGBT module is adjusted or replaced one minute, five minutes, ten minutes, thirty minutes, one hour, two hours, three hours, five hours, twelve hours, twenty four hours, two days, three days, five days, seven days, or ten days in advance, etc. In one embodiment, the impending failure state comprises: and the fault state is in a fault state within a preset time threshold or a preset time threshold range. In one embodiment, the preset number threshold includes one, two, three, five, ten, twenty, fifty, one hundred, two hundred, five hundred, or one thousand, etc.; in one embodiment, the predetermined time threshold range includes one minute, five minutes, ten minutes, thirty minutes, one hour, two hours, three hours, five hours, twelve hours, twenty-four hours, two days, three days, five days, seven days, ten days, or the like; further, the preset time threshold and/or the preset time threshold are set or adjusted according to a working environment, an actual demand, a use condition and/or a safety guarantee requirement. Therefore, the method can be applied to the treatment of the full-life fatigue property of the IGBT module under the target working environment parameters, such as the replacement of the IGBT module or related products thereof in advance, and effectively ensures the operation safety of products adopting the IGBT module, such as the operation safety of high-speed rails.
In one embodiment, the electric-thermal-structure coupling calculation is carried out under a new finite element model, and the change rule of the physical quantity of the IGBT module under different cracks can be analyzed by repeating the steps. It can be understood that, in one embodiment, the IGBT module fatigue analysis processing method includes the following steps: performing an electro-thermal-structural coupling calculation; calculating the fatigue damage value of the unit according to the corrected strain fatigue curve and the cycle number; determining an accumulated damage value of a unit according to the fatigue damage value; killing units with damage values larger than 1, and continuing to perform electric-thermal-structure coupling calculation and subsequent steps until the device is completely out of service; and repeating the steps until the analysis of all the target working environment parameters is completed. The rest of the examples are analogized. The fatigue analysis and processing method for the IGBT module is also applicable to other devices with similar working conditions, such as MOSFET tubes, thyristors, diodes and the like, which may be subjected to fatigue failure due to the influence of alternating thermal stress, so that the thermal fatigue failure mechanism of the devices can be researched, and the change rule of the physical quantity of the devices can be analyzed, which is simplified at least in the introduction.
In one embodiment, the method for analyzing the full-life fatigue of the IGBT module comprises the following steps:
step 1) establishing a finite element model of the IGBT module: establishing a geometric model of the module according to actual parameters of the IGBT module, then carrying out mesh subdivision, wherein the model is required to be subjected to encrypted subdivision, particularly at the position where the crack appears, so that the crack span can be ensured not to be too large when the step 5) is carried out, and the simulation accuracy is improved;
step 2) electro-thermal-structural coupling calculation: applying a load, calculating a thermal stress/strain distribution generated by the module through electro-thermal-structural coupling;
and 3) drawing a corrected strain fatigue curve (epsilon-N curve): performing fatigue life tests on materials of all parts of the IGBT module or standard parts of the materials to obtain a relation between alternating strain borne by each part and the cycle frequency of fracture, namely a basic epsilon-N curve, and correcting the basic epsilon-N curve by considering process treatment made by actual processing on the basis to obtain a corrected epsilon-N curve;
step 4), calculating the fatigue damage value of each unit: according to the corrected epsilon-N curve and based on Miner linear accumulated damage theory, the strain level epsilon can be determinediCumulative damage under action is as follows: IGBT module or other semiconductor component is subjected to niInjury of the subcirculation is Di＝ni/Ni. If at k strain levels εiUnder the action of niFor the second cycle, the fatigue damage for each cell can then be determined as follows:
if N is 0, D is 0, the member is not subjected to fatigue damage, the physical properties of the unit are not changed, and if N is N, D is 1, the partial unit fails, and the crack growth period is entered. Taking the accumulated damage D of the unit as 1 as a demarcation point of two stages, and determining the accumulated damage value of each unit through an electric-thermal-structure coupling calculation result and the cycle number;
step 5) determining a finite element model of the next power cycle: judging whether the unit fails according to the method of the step 4), killing the unit with D >1 as a failed unit, multiplying the rigidity of the killed unit by a small coefficient, and not influencing the calculation result any more, wherein the unit with D <1 does not reach the critical damage as a living unit, and the characteristic of the unit is unchanged. Thus, new finite element models under different cycles can be determined through the living and dead unit technology, and different cracks can be simulated;
step 6) restart the electrical-thermal-structural coupling calculation: and (3) performing electric-thermal-structure coupling calculation under the new finite element model, and repeating the step 4-5) to analyze the change rule of the physical quantity of the IGBT module under different cracks so as to establish an evaluation model of the IGBT module, thereby simulating the whole life fatigue characteristic of the IGBT module and formulating an operation strategy.
According to the design, the expansion of the fatigue crack of the IGBT module is represented by a life-dead unit technology, a module fatigue crack expansion model is established, and a traditional crack expansion simulation method is simplified; and the change rule of physical parameters of the IGBT module in the fatigue crack propagation stage is calculated and analyzed by electric-thermal-structure coupling, so that a fatigue damage state model of the module can be established, and the traditional evaluation technology is optimized.
The fatigue analysis processing method of the IGBT module is further described below by taking a commercially available GD50HFL120C1S module as an example. In the internal structure of GD50HFL120C1S, terminal No. 1 is the collector of tube 1, terminal No. 2 is the emitter of tube 1, and is also connected to the collector of tube 2, 7 is the emitter voltage leading-out terminal of tube 1, and 6 is the gate of tube 1; terminal No. 3 is the emitter of tube 2, 5 is the emitter voltage terminal of tube 2, and 4 is the gate of tube 2, through which the electrical properties of the end of the module can be measured. Considering that the module is a double-tube structure, one IGBT chip is selected for analysis. Since the thermal conductivity of the encapsulant and the filled silicone is low, the heat is mainly dissipated downward through the copper substrate, and for simplicity of analysis, the upper silicone and the encapsulation are ignored and the module top is considered to be in an adiabatic condition. The IGBT module fatigue analysis processing method mainly comprises the following steps.
(1) Establishing a finite element model of the IGBT module: as shown in fig. 3, a simulation model is established according to a GD50HFL120C1S physical model, and a finite element model can be obtained by dividing a mesh, that is, a finite mesh is set therein, and the mesh is used as a unit for subsequent calculation;
(2) electro-thermal-structural coupling calculations: and applying power cycle load, and calculating the distribution of temperature, potential and stress through electric-thermal-structure coupling. The bonding lead can be determined to have undergone plastic deformation by combining the yield strength of each material, and the thermal stress of other layers of materials is smaller than the yield strength and only undergoes elastic deformation, so that the fatigue life of the bonding lead is longer than that of the bonding lead, and the bonding surface is most likely to undergo fatigue failure to cause the bonding lead to fall off. The temperature distribution of the IGBT module at 16s is shown in FIG. 4, the potential distribution of the IGBT module at 16s is shown in FIG. 5, the thermal stress distribution of the IGBT at 16s is shown in FIG. 6, the equivalent plastic deformation of the bonding wire at 16s is shown in FIG. 7, and the concrete state at the rest time is similar;
(3) drawing a corrected strain fatigue curve (epsilon-N curve): the fatigue test adopts strain amplitude control to carry out tension-compression symmetric fatigue, the stress ratio R is-1, the frequency is 50Hz, and a relation curve between the strain amplitude epsilon and the corresponding cycle N of the fracture is established. On the basis, the basic epsilon-N curve is corrected by considering the process treatment of actual processing to obtain a corrected epsilon-N curve;
(4) calculating the fatigue damage value of the unit: determining the damage degree of each unit according to the corrected epsilon-N curve, the electric-thermal-structure coupling calculation result and the power cycle number to obtain the damage values of the units under different cycle numbers;
(5) determining a finite element model of the next power cycle: comparing the critical damage strength, a fatigue crack propagation model of the module under different cycle times can be established through a life-dead unit technology, wherein the aluminum substrate failure condition after 10000 times of power cycle is shown in fig. 8, the aluminum substrate failure condition after 12500 times of power cycle is shown in fig. 9, the aluminum substrate failure condition after 13200 times of power cycle is shown in fig. 10, and the aluminum substrate failure condition after 13700 times of power cycle is shown in fig. 11. The oval circles are shown to indicate the presence of cracks therein.
(6) Restart electrical-thermal-structural coupling calculation: and generating a new finite element model according to the fatigue crack propagation model, and performing electric-thermal-structure coupling calculation on the basis to obtain the physical quantity of the module during the crack propagation period and draw a change curve of the parameters. In which the potential variation curve at different cycle numbers is shown in fig. 12 and the temperature variation curve at different cycle numbers is shown in fig. 13, and then, according to the curves shown in fig. 12 and 13, the location of the sudden change in pressure drop, i.e., the location of the sudden change in pressure drop, was determined as a criterion for evaluation, i.e., the location of the sudden change in shell temperature was 77.523 deg.c, which was an increase of about 3.71%. And then, an operation strategy is formulated according to the evaluation standard, so that the reliability of the device can be ensured, and the utilization rate of the device can be maximized.
In one embodiment, a semiconductor device processing method is implemented by using the method for analyzing and processing the fatigue of the IGBT module according to any one of the embodiments, and an operation strategy of the semiconductor device is set according to the state evaluation model, and the semiconductor device includes an IGBT, a MOSFET tube, a thyristor and/or a diode device. In one embodiment, the method for replacing the semiconductor device is realized by adopting the method for analyzing and processing the fatigue of the IGBT module, and the semiconductor device comprises an IGBT, a MOSFET tube, a thyristor and/or a diode device. In one embodiment, an IGBT, a MOSFET transistor, a thyristor, and/or a diode device is used as or in place of the IGBT module in the IGBT module fatigue analysis processing method according to any one embodiment. In one embodiment, the semiconductor device is adjusted or replaced when the semiconductor device is judged to be in a failure state according to the accumulated damage value of any unit or all units of the semiconductor device. And adjusting or replacing the semiconductor device, wherein the adjustment or replacement comprises adjusting the working environment parameters of the semiconductor device or replacing the semiconductor device on the premise of safe use. In one embodiment, the semiconductor device is adjusted or replaced one, two, three, five, ten, twenty, fifty, one hundred, two hundred, five hundred, or one thousand times in advance. In one embodiment, the semiconductor device is adjusted or replaced one minute, five minutes, ten minutes, thirty minutes, one hour, two hours, three hours, five hours, twelve hours, twenty four hours, two days, three days, five days, seven days, or ten days in advance, etc. By the design, the fatigue failure mechanism of the semiconductor device can be accurately obtained, the defect that the traditional numerical analysis method cannot simulate the physical characteristics during the fatigue crack propagation period is overcome, the problems that the test method is high in cost and difficult to deeply research the fatigue characteristics of the whole service life of the module are solved, the crack initiation period and the crack propagation period of the fatigue failure of the semiconductor device are comprehensively considered, the accurate simulation analysis of the whole service life fatigue of the semiconductor device is realized, and the maintenance, the working condition adjustment or the component replacement is carried out in advance before the failure occurs.
In other embodiments of the present application, the present application further includes an IGBT module fatigue analysis processing method and a semiconductor device replacement method that can be implemented by combining technical features of the above embodiments.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present application, and the description thereof is more specific and detailed, but not construed as limiting the claims. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, which falls within the scope of protection of the present application. Therefore, the protection scope of the present application shall be subject to the appended claims.
Claims (10)
1. The fatigue analysis and processing method of the IGBT module is characterized by comprising the following steps of:
step S1, establishing a finite element model of the IGBT module: establishing a geometric model of the IGBT module according to the actual size of the IGBT module, and carrying out mesh subdivision on the geometric model to obtain a finite element model of the IGBT module;
step S2, electro-thermal-structural coupling calculation: calculating the distribution of thermal stress and strain generated by the IGBT module under power circulation through electric-thermal-structure coupling according to the finite element model, and recording the distribution result;
step S3, drawing a strain fatigue curve: performing a fatigue life test on a material standard part of each part of the IGBT module to obtain a relation between alternating strain borne by each part and the cycle frequency of fracture as a strain fatigue curve;
step S4, calculating a fatigue damage value of each cell of the IGBT module: according to the strain fatigue curve, calculating a fatigue damage value of the unit subjected to multiple cycles under the action of multiple strain levels, and determining an accumulated damage value of the unit according to the fatigue damage value; wherein the member is subjected to niInjury of the subcirculation is Di＝ni/Ni(ii) a When at k strain levels εiUnder the action of niFor the second cycle, the fatigue damage for each cell can then be determined as follows:
wherein, i is 1,2 …, k; if N is 0, D is 0, the member has no fatigue damage, the physical properties of the units are not changed, and if N is N, D is 1, the local units fail, and the crack extension period is entered;
step S5, determining a finite element model of the next power cycle: judging whether the units fail according to the accumulated damage values, continuously determining a new IGBT module finite element model according to the units which do not fail, and returning to continuously execute the step S2 until all the units fail; the method comprises the following steps that a life and death unit technology is adopted to mark whether a unit fails, the failed unit is described through a killing unit, the unit which does not reach critical damage is a life unit, the unit with the D larger than or equal to 1 is killed, the killed unit is just the unit with the rigidity multiplied by a small coefficient, so that the killed unit does not influence a calculation result any more, and the characteristic of the unit with the D smaller than 1 is unchanged, so that the killed unit is the life unit;
step S6, establishing a state evaluation model of the IGBT module: establishing a state evaluation model of the full-life fatigue failure of the IGBT module according to the failure condition of each unit and the distribution result obtained by the electro-thermal-structure coupling calculation; setting or adjusting an operation strategy of the IGBT module according to the state evaluation model, wherein for the running equipment, the IGBT module can support longer time or more times until the equipment is safely stopped by adjusting working environment parameters; for the equipment about to fail, the IGBT module is replaced.
2. The method for analyzing and processing the fatigue of the IGBT module according to claim 1, wherein in step S1, when the geometric model is gridded, the geometric model is densely gridded at a position where a crack may occur.
3. The IGBT module fatigue analysis processing method of claim 2, characterized in that the geometric model is mesh-split based on historical data to locate a possible crack in a mesh.
4. The method for analyzing and processing the fatigue of the IGBT module as claimed in claim 1, wherein in step S2, a power cycle load is applied, and the distribution of the thermal stress and strain generated by the IGBT module under the power cycle is calculated through the electro-thermal-structure coupling.
5. The method for analyzing and processing the fatigue of the IGBT module as claimed in claim 1, wherein in step S3, the strain fatigue curve is obtained by performing a fatigue life test on the IGBT module material to obtain the different alternating strains born by the component and the corresponding fracture times and performing data fitting.
6. The method for analyzing and processing the fatigue of the IGBT module according to claim 1, wherein in step S3, the strain-fatigue curve is further corrected according to a machining process of a target working environment.
7. The method for analyzing and processing the fatigue of the IGBT module according to claim 1, wherein in step S4, the total life fatigue is divided into a fatigue crack initiation stage and a fatigue crack propagation stage according to the critical fatigue damage, and the stage where the cell is located is determined by using the cumulative damage value of 1 as a boundary point between the two stages.
8. The IGBT module fatigue analysis and processing method according to claim 1, characterized in that the strain fatigue test is carried out on a fatigue machine through standard parts, and the part is provided with one or more standard parts.
9. The IGBT module fatigue analysis processing method of claim 1, wherein performing mesh generation on the geometric model comprises: the geometric model is gridded so that the grid density is high at the positions where cracks may occur.
10. A semiconductor device processing method, which is implemented by the IGBT module fatigue analysis processing method according to any one of claims 1 to 9, wherein an operation strategy of a semiconductor device is set according to the state evaluation model, and the semiconductor device includes an IGBT, a MOSFET tube, a thyristor and/or a diode device.
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