CN106291299A - The thermal fatigue life determination methods of power semiconductor modular and power semiconductor modular - Google Patents
The thermal fatigue life determination methods of power semiconductor modular and power semiconductor modular Download PDFInfo
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- CN106291299A CN106291299A CN201510240232.9A CN201510240232A CN106291299A CN 106291299 A CN106291299 A CN 106291299A CN 201510240232 A CN201510240232 A CN 201510240232A CN 106291299 A CN106291299 A CN 106291299A
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- power semiconductor
- fatigue life
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2642—Testing semiconductor operation lifetime or reliability, e.g. by accelerated life tests
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Abstract
It is an object of the invention to protect the thermal fatigue life determination methods of a kind of power semiconductor modular and power semiconductor modular.This power semiconductor modular is arranged at enclosure interior, multiple power semiconductor is made to be engaged with insulated substrate by welding, and this insulated substrate is engaged with substrate by welding, including: thermal fatigue life judges component, this thermal fatigue life judges that component is formed at the face side of described housing, and there is following color aging characteristic: this thermal fatigue life judges the increase of the temperature cycle times that the color that component is presented at the specified temperature experienced along with described power semiconductor modular and changes, and the most aging to specific complete aging color, judge that the color that component is presented at the specified temperature judges the thermal fatigue life of described power semiconductor modular according to described thermal fatigue life.
Description
Technical field
The present invention relates to power semiconductor modular, particularly to the power semiconductor modular including such as IGBT (Insulated Gate Bipolar Transistor) constant power semiconductor element and the thermal fatigue life determination methods of power semiconductor modular for carrying out high power conversion.
Background technology
In recent years, power semiconductor modular is applied not only to, with generating, the power supply high-power field as representative, also be applied to the widely field such as life household electrical appliances, railway, electric automobile, fuel cell generation.In these cases, power semiconductor modular can produce large effect to the quality of each application, reliability, thus requires that power semiconductor modular has higher reliability.
Power semiconductor modular produces temperature and rises, declines according to the variations in temperature in operating environment.The internal structure of power semiconductor modular also can be applied in thermal stress because of the rising of this temperature, decline and produce heat exhaustion.This heat exhaustion depend on temperature rise, the amplitude of variation that declines and frequency etc., thus the life-span of power semiconductor modular can because of operating condition, the difference of environmental condition and different.This is depended on that the life-span of thermal stress is referred to as thermal fatigue life (thermal cycle life).In the operating of power conversion device, when power semiconductor modular reaches its thermal fatigue life, power conversion device can be caused to abend, and production line may be caused to stop.And find out the reason of stopping and carrying out repairing the time needing cost longer, thus it is likely to result in bigger economic loss.Therefore, if the deterioration of weld layer just can be detected before power semiconductor modular arrives its thermal fatigue life in time, then can stop the operating of power conversion device in advance and target power semiconductor module is replaced.
Prior art use thermal fatigue life experiment (being interrupted energising experiment) speculate the operating life of power semiconductor modular.In thermal fatigue life experiment, when such as IGBT module being fixed on radiator fan, carry out as shown in Figure 9 being energized, power-off so that the junction temperature of igbt chip (Tj) rises, declines, thus produce thermal stress until producing destruction.Additionally, be broadly divided into two big classes in thermal fatigue life experiment (being interrupted energising experiment): △ Tj thermal fatigue life is tested and △ Tc thermal fatigue life experiment (with reference to non-patent literature 1).In the experiment of △ Tc thermal fatigue life, carry out being energized until case temperature (Tc) rises to a certain arbitrary temp, and the moment stopping energising of a certain arbitrary temp is reached at case temperature, then the state before making case temperature be down to energising, tested as a circulation repeatedly using the above-mentioned cycle.The experiment of this △ Tc thermal fatigue life is mainly used in the life-span of the welded joint between evaluating at the bottom of insulated substrate and cuprio.
In known, for using the power semiconductor arrangement (power semiconductor modular) of such as IGBT etc., it is provided for estimating the life-span estimating device (patent documentation 1) in the life-span of this power semiconductor modular.As shown in Figure 10, in order to estimate the life-span of the IGBT module 82 constituting inverter, this life-span estimating device includes: the temperature sensor 10 of the copper base reservoir temperature of detection IGBT module；According to certain sampling period the output of this temperature sensor carried out the A/D changer 20 of A/D conversion；Output based on A/D changer detects temperature difference, temperature difference detected by Bi compare is poor with the inflection temperature pre-saved, according to certain side being positioned at the many straight lines that the thermal fatigue life curve obtained for resolving the thermal fatigue life experiment carried out in advance approximates based on the temperature difference detected by this comparative result, from the operational parameter being stored in lifetime data memorizer 40, read fiducial temperature set in advance on the slope of near linear and this straight line poor, carry out mathematic(al) expectation and export the life-span computing circuit 30 of life information；And storage has in life-span computing circuit 30 and carries out the lifetime data memorizer 40 of operational parameter needed for life-span computing.
Prior art literature
Patent documentation
Patent documentation 1: Japanese Unexamined Patent Publication 2011-196703 publication
Non-patent literature
Non-patent literature 1: bright outer 2 of angle " パ ワ halfbody モ ジ ュ Le To お け Ru letter property skill " Fuji's Times, Vol.74, No.2, PP.45-48,2001
Summary of the invention
Invent problem to be solved
In the power semiconductor arrangement described in above-mentioned patent documentation 1, need to be installed to inside power semiconductor arrangement by temperature sensor 10, and when calculating thermal fatigue life, then need life information poor relative to different fiducial temperatures, the computing formula etc. of progressive damage, thus the problem such as the increase of circuit scale, calculating complexity, required storage increase can be caused.
The present invention completes in view of the above problems, its object is to be provided that power semiconductor modular and the thermal fatigue life determination methods of power semiconductor modular that a kind of small volume, thermal fatigue life judge process are simple, cost is minimized.
Solve the technical scheme that technical problem is used
A first aspect of the present invention relates to power semiconductor modular, this power semiconductor modular is arranged at enclosure interior, makes multiple power semiconductor be engaged with insulated substrate by welding, and this insulated substrate is engaged with substrate by welding, it is characterized in that, including:
Thermal fatigue life judges component, this thermal fatigue life judges that component is formed at the face side of described housing, and there is following color aging characteristic: this thermal fatigue life judges the increase of the temperature cycle times that the color that component is presented at the specified temperature experienced along with described power semiconductor modular and changes, and the most aging to specific complete aging color
Judge that the color that component is presented at the specified temperature judges the thermal fatigue life of described power semiconductor modular according to described thermal fatigue life.
A second aspect of the present invention relates to the power semiconductor modular of first aspect, it is characterised in that described thermal fatigue life judges that component is formed at the position corresponding with power semiconductor of the face side of described housing.
A third aspect of the present invention relates to the power semiconductor modular of first aspect, it is characterised in that described power semiconductor is IGBT.
A fourth aspect of the present invention relates to the power semiconductor modular of first aspect, it is characterised in that described thermal fatigue life judges that component is formed by heat discoloration ink, and the color that described heat discoloration ink presents changes according to the change of temperature.
A fifth aspect of the present invention relates to the thermal fatigue life determination methods of a kind of power semiconductor modular, it is adaptable to the power semiconductor modular of a first aspect of the present invention, it is characterised in that including:
When power semiconductor modular operates, utilize optical instrument that the thermal fatigue life of claim 1 being judged, the color that component is presented detects the most at regular intervals, and the detecting step that color detection result is exported；
The comparison step that the color analysis result of output in described detecting step is compared with the corresponding table of color-lifetime data prestored in memory；And
Judge whether to exceed the judgement step of the predetermined value of the thermal fatigue life of described power semiconductor modular according to above-mentioned comparative result,
Described lifetime data correspondence table is previously stored with the data that the described thermal fatigue life obtained through thermal fatigue life experiment judges the corresponding relation of the color of component and the thermal fatigue life of described power semiconductor modular.
A sixth aspect of the present invention relates to the thermal fatigue life determination methods of the power semiconductor modular of the 5th aspect, it is characterised in that described optical instrument is laser spectrometer.
A seventh aspect of the present invention relates to the thermal fatigue life determination methods of the power semiconductor modular of the 5th aspect, it is characterized in that, also include: when determined by, the thermal fatigue life of described power semiconductor modular exceedes predetermined value, the signal output step of output early warning signal.
A eighth aspect of the present invention relates to the thermal fatigue life determination methods of the power semiconductor modular of the 7th aspect, it is characterised in that described predetermined value is the 80% of the thermal fatigue life total length of described power semiconductor modular.
Invention effect
Power semiconductor modular according to the present invention and the thermal fatigue life determination methods of power semiconductor modular, can reduce the volume of power semiconductor modular, simplifies the judge process of thermal fatigue life, and reduces cost.
Accompanying drawing explanation
Fig. 1 a is the top view schematically showing the power semiconductor modular involved by embodiment 1, and Fig. 1 b is the side view schematically showing the power semiconductor modular involved by embodiment 1.
Fig. 2 is the equivalent circuit diagram briefly expressing the power semiconductor modular involved by embodiment 1.
Fig. 3 is the sectional structure chart of the power semiconductor modular involved by embodiment 1.
Fig. 4 is the figure of the powered-on mode representing the △ Tc thermal fatigue life experiment involved by embodiments of the present invention 1.
Fig. 5 shows the curve chart of the experimental result that above-mentioned △ Tc thermal fatigue life tests.
Fig. 6 is the table exemplifying color-life characteristic corresponding relation that the thermal fatigue life involved by embodiments of the present invention 1 judges component.
Fig. 7 is the structure drawing of device briefly expressing the thermal fatigue life judgement for the power semiconductor modular involved by embodiments of the present invention 1.
Fig. 8 is the flow chart of the thermal fatigue life determination methods representing the power semiconductor modular involved by embodiments of the present invention 1.
Fig. 9 is the figure schematically showing the operation condition in thermal fatigue life experiment.
Figure 10 is to represent the figure of the structure of thermal fatigue life estimating device in prior art.
Detailed description of the invention
Below, based on accompanying drawing, the embodiment of invention is illustrated.But, following embodiment is only to illustrate.The invention is not restricted to following any embodiment.
Additionally, in each accompanying drawing of institute's references such as embodiment, come with reference to the component substantially with identical function with identical label.Additionally, the accompanying drawing of institute's references such as embodiment is the figure of schematic description, the dimensional ratios of the object drawn in accompanying drawing etc. may be different from the dimensional ratios of the object in reality etc..The dimensional ratios etc. of the object that accompanying drawing is mutual is also possible to difference.The dimensional ratios etc. of concrete object should refer to the following description and judges.
Embodiment 1.
Below, utilize Fig. 1～Fig. 8 that embodiments of the present invention 1 are illustrated.
(power semiconductor modular 1)
Internal circuit structure is not construed as limiting by the power semiconductor modular of the present invention, in embodiment 1, as power semiconductor modular 1, by have utilize be made up of the three-phase bridge type converter circuit (6in1IGBT module) of power semiconductor 41～46 respectively IGBT41a～46a and fly-wheel diode 41b～46b as a example by illustrate.
Fig. 1 a is the top view schematically showing the power semiconductor modular 1 involved by embodiment 1, and Fig. 1 b is the side view schematically showing the power semiconductor modular 1 involved by embodiment 1.Fig. 2 is the equivalent circuit diagram briefly expressing the power semiconductor modular 1 involved by embodiment 1.
As shown in Figure 1a, it is formed in the left side of power semiconductor modular 1 by IGBT41a, fly-wheel diode 41b, IGBT42a, fly-wheel diode 42b, IGBT43a, the upper brachium pontis that fly-wheel diode 43b is constituted, it is formed on the right side of power semiconductor modular 1 by IGBT44a, fly-wheel diode 44b, IGBT45a, fly-wheel diode 45b, the lower brachium pontis that IGBT46a, fly-wheel diode 46b are constituted.
Shown in Fig. 1 b, the front surface of the housing 2 of power semiconductor modular 1 is formed with thermal fatigue life and judges component 3.Above-mentioned thermal fatigue life can also be judged that component is formed at the rear surface of housing 2.Furthermore it is preferred that this thermal fatigue life to be judged component 3 is formed at the position corresponding for the IGBT with enclosure interior of the face side of housing 2.
Judging the example of component 3 as thermal fatigue life, can list such as heat discoloration ink, its color presented changes according to the change of temperature.Specifically, in the temperature range of 25 DEG C-70 DEG C, the color of heat discoloration ink can be the most thin out from darkorange along with the rising of temperature, and when temperature rises to more than 70 DEG C, the color of heat discoloration ink can become colorless；And when temperature is in time beginning to decline for 70 DEG C, and the color of heat discoloration ink can deepen from colourless gradually along with the decline of temperature, and reverts to darkorange near 25 DEG C.
Additionally, the color of heat discoloration ink can change because of the increase of variations in temperature number of times, and finally at set point of temperature such as 95 DEG C, present the bottle green as complete aging color.
Heat discoloration ink can be formed at the face side of housing 2 by coating, the mode such as bonding.Its thickness is 100um-300um.
In addition, thermal fatigue life judges that component 3 is not limited to heat discoloration ink, as long as color becomes priming color when can change along with the rising of temperature and drop at temperature in certain temperature range again, and the material of complete aging color is finally presented at the specified temperature in the increase along with variations in temperature number of times, can be such as AgI, Ag2The multiple materials such as S.
Fig. 2 is the equivalent circuit diagram briefly expressing the power semiconductor modular involved by embodiment 1.As in figure 2 it is shown, in power semiconductor modular 1, power semiconductor 41 uses parallel connected in reverse phase to connect IGBT41a, the structure of fly-wheel diode 41b.Other power semiconductors 42～46 are also adopted by identical structure.
(power semiconductor 41)
Fig. 3 is the sectional structure chart of the power semiconductor modular 1 involved by embodiment 1.
As it has been described above, power semiconductor 41 includes IGBT41a and for protecting the fly-wheel diode 41b of this IGBT41a.Substrate 910 is engaged with the two-sided insulated substrate 930 being respectively provided with circuit layout 921,922,923 by weld layer 920, circuit layout 922 is provided with IGBT41a by weld layer 940.Same, circuit layout 923 is provided with fly-wheel diode 41b by weld layer 950.
Substrate 910 can use at the bottom of cuprio.Weld layer 920,940,950 can use kamash alloy material.Above-mentioned substrate 910 is engaged with the junction surface of housing 2 by bonding agent etc..
Additionally, power semiconductor 42,43,44,45,46 all has the structure identical with power semiconductor 41.
(damage model of △ Tc thermal fatigue life)
On the basis of the structure of power semiconductor 41 is illustrated, illustrate the damage model of △ Tc thermal fatigue life.
After power semiconductor modular 1 starts running, case temperature Tc can rise therewith, and after power semiconductor modular quits work, case temperature Tc can be gradually reduced.Owing to the thermal coefficient of expansion of insulated substrate 930 with substrate 910 there are differences, thus the rising of temperature, decline can cause occurring in the weld layer 920 between insulated substrate 930 and substrate 910 stress deformation.If repeating said temperature change, the most above-mentioned stress deformation may result in weld layer 920 and crackle 19 etc. occur.If this crackle etc. constantly expands and extend to the insulated substrate 930 for installing above-mentioned IGBT41a, then junction temperature Tj can rise because of the deterioration of the exothermicity of IGBT41a.As a result of which it is, when junction temperature exceedes heat resisting temperature Tjmax, there is the heat damage of power semiconductor modular 1.
Thus, use △ Tc thermal fatigue life evaluates the life-span of the weld layer 920 in power semiconductor modular 1 between insulated substrate 930 and base 910.
(experiment of △ Tc thermal fatigue life)
It follows that △ Tc thermal fatigue life experiment involved in the present invention is described based on accompanying drawing 4.
In this △ Tc thermal fatigue life is tested, from the beginning of room temperature 25 DEG C, six of power semiconductor modular 1 are energized mutually so that the bulk temperature of whole housing 2 rises, energising is disconnected when arriving 100 DEG C, then the state before making housing 2 bulk temperature be down to energising, using above-mentioned period as a cycle.The process of above-mentioned heating, cooling is repeated.
Above-mentioned conduction time ton substantially about 1-3 minute, above-mentioned turn-off time toff substantially about 10-20 minute.
Fig. 5 shows the curve chart of the experimental result that above-mentioned △ Tc thermal fatigue life tests.
As it is shown in figure 5, the △ Tc thermal fatigue life of power semiconductor modular 1 depends on the temperature ascensional range in circulation.Such as when △ Tc is 70 DEG C, when temperature cycle times reaches 22, when 000 time, power semiconductor modular 1 is close to △ Tc thermal fatigue life total length, the insulated substrate 930 in power semiconductor modular 1 and the weld layer 920 between base 910 it may happen that heat damage.
The detection of color of component (thermal fatigue life judge)
While carrying out the experiment of above-mentioned △ Tc thermal fatigue life, the present inventor utilizes laser color analyzer 20 that the thermal fatigue life on the front surface being formed at housing 2 being judged, the color of component 3 detects.Herein, judge to illustrate as a example by component by thermal fatigue life.
Its testing result is, it it is 70 DEG C at △ Tc, during temperature cycle times substantially 15400 times, if temperature is more than 95 DEG C, then thermal fatigue life judges component to start gradually to present light green color, along with temperature cycle times progressively close to 22,000 time, thermal fatigue life judges that the green that component is presented constantly deepens and finally presents bottle green.
I.e., it it is 70 DEG C at △ Tc, temperature cycle times is close to the 70% of thermal fatigue life total length, and temperature more than 95 DEG C time, thermal fatigue life judges that component starts to present light green color, along with temperature cycle times progressively close to the total length of thermal fatigue life of power semiconductor, thermal fatigue life judges that component can present the bottle green as its complete aging color.
Fig. 6 passes the imperial examinations at the provincial level and is illustrated the testing result of the color that above-mentioned thermal fatigue life judges component, and is stored in memorizer 301 described later as color-lifetime data correspondence table.
Detection device is not limited to laser color analyzer 20, as long as can detect that thermal fatigue life judges the device of the color of component 3.
(device that the thermal fatigue life of power semiconductor modular judges)
Fig. 7 is the structure chart of the judgment means briefly expressing the thermal fatigue life for the power semiconductor modular involved by embodiments of the present invention 1.The judgment means of the thermal fatigue life of this power semiconductor modular includes: laser color analyzer 20, and this laser color analyzer 20 detects the thermal fatigue life on the surface being formed at power semiconductor modular 1 at regular intervals based on the instruction from control portion 10 and judges the color of component 3；Comparator 30, the testing result of laser color analyzer 20 is compared by this comparator 30 with the data in the corresponding table of color-lifetime data being stored in advance in memorizer 301, and comparative result is sent to control portion 10, above-mentioned color-lifetime data correspondence table (such as Fig. 6) is when △ Tc thermal fatigue life is tested, and thermal fatigue life judging, the color of component detects and the result that obtains；And control portion 10, this control portion is when power semiconductor modular operates, instruction laser color analyzer 20 detects the most at regular intervals, and judge whether to exceed the predetermined value of the thermal fatigue life of power semiconductor modular 1 based on the comparative result inputted from comparator 30, alarm is sent in the case of being judged as exceeding the predetermined value of the thermal fatigue life of power semiconductor modular 1, predetermined value at the thermal fatigue life being judged as not less than power semiconductor modular 1, again indicate that laser color analyzer 20 detects, above-mentioned predetermined value is by operator's predetermined set, such as may be set to the 80% of thermal fatigue life total length.
It follows that the flow process of the thermal fatigue life determination methods of power semiconductor modular involved by embodiments of the present invention 1 is described based on Fig. 8.
First, the thermal fatigue life to the surface being formed at power semiconductor modular 1 judges that the color of component 3 detects the most at regular intervals, and testing result is exported.
Testing result is compared with the data in the corresponding table of color-lifetime data prestored in memory, and comparative result is exported.
Judge whether to exceed the predetermined value of the thermal fatigue life of above-mentioned power semiconductor modular 1 according to comparative result, in the case of being judged as exceeding the predetermined value of the thermal fatigue life of power semiconductor modular 1, send alarm.In the case of being judged as the predetermined value that power semiconductor modular 1 has not exceeded its thermal fatigue life, again indicate that carrying out thermal fatigue life judges the color detection of component 3.Such as detecting that thermal fatigue life judges that the color of component presents green when, it is judged that exceeded the 80% of its thermal fatigue life total length for its thermal fatigue life, send alarm to point out operator.
As mentioned above, component 3 is judged by forming thermal fatigue life on housing 2 surface of power semiconductor modular 1, when power semiconductor modular operates, this thermal fatigue life is judged that the color of component detects, and the result of detection gained compared with the data in the corresponding table of color-lifetime data prestored, thus judge the thermal fatigue life of power semiconductor modular.
According to embodiment 1, the volume of power semiconductor modular can be reduced, simplify the judge process of thermal fatigue life, and reduce cost.
Although being illustrated embodiments of the present invention, but above-mentioned embodiment is only used as example presents, and does not really wants to be defined invention scope.This new embodiment can be implemented by other various modes, in the range of without departing from invention main idea, can carry out various omission, replace, changes.Above-mentioned embodiment and deformation thereof are all contained in the scope or spirit of invention, and are included in the invention described in Patent right requirement and equivalency range thereof.
Label declaration
1 power semiconductor modular
2 housings
3 thermal fatigue lifes judge component
41～46 power semiconductors
41a～46a IGBT
41b～46b fly-wheel diode
910 substrates
920,940,950 weld layers
921～923 circuit layouts
930 insulated substrates
19 crackles
10 control portions
20 laser color analyzers
30 comparators
301 memorizeies.
Claims (8)
1. a power semiconductor modular,
Power semiconductor modular is arranged at enclosure interior, make multiple power semiconductor by welding and with absolutely
Edge substrate engages, and this insulated substrate is engaged with substrate by welding, it is characterised in that including:
Thermal fatigue life judges component, and this thermal fatigue life judges that component is formed at the face side of described housing,
And there is following color aging characteristic: this thermal fatigue life judges the face that component is presented at the specified temperature
The increase of the temperature cycle times that color is experienced along with described power semiconductor modular and change, and finally
Aging to specific complete aging color,
Judge that the color that component is presented at the specified temperature judges according to described thermal fatigue life described
The thermal fatigue life of power semiconductor modular.
2. power semiconductor modular as claimed in claim 1, it is characterised in that
Described thermal fatigue life judge that component is formed at the face side of described housing with the plurality of power half
The position that conductor element is corresponding.
3. power semiconductor modular as claimed in claim 1, it is characterised in that
Described power semiconductor includes IGBT.
4. power semiconductor modular as claimed in claim 1, it is characterised in that
Described thermal fatigue life judges that component is formed by heat discoloration ink, and described heat discoloration ink presents
Color changes according to the change of temperature.
5. the thermal fatigue life determination methods of a power semiconductor modular, it is adaptable to the power of claim 1
Semiconductor module, it is characterised in that including:
When power semiconductor modular operates, optical instrument is utilized the most at the specified temperature right
The thermal fatigue life of claim 1 judges that the color that component is presented detects, and by color detection result
The detecting step of output；
By in described detecting step output color analysis result and prestore color in memory-
The comparison step that lifetime data correspondence table compares；And
Judge whether to exceed the thermal fatigue life of described power semiconductor modular according to above-mentioned comparative result
The judgement step of predetermined value,
Described lifetime data correspondence table is previously stored with the described heat obtained through thermal fatigue life experiment
Judge the corresponding relation of the color of component and the thermal fatigue life of described power semiconductor modular fatigue life
Data.
6. the life-span determination methods of power semiconductor modular as claimed in claim 5, it is characterised in that
Described optical instrument is laser spectrometer.
7. the thermal fatigue life determination methods of power semiconductor modular as claimed in claim 6, its feature exists
In, also include:
When the thermal fatigue life being judged as described power semiconductor modular exceedes described predetermined value, export early warning
The signal output step of signal.
8. the life-span determination methods of power semiconductor modular as claimed in claim 7, it is characterised in that
Described predetermined value is the 80% of the thermal fatigue life total length of described power semiconductor modular.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109885884A (en) * | 2019-01-21 | 2019-06-14 | 广州供电局有限公司 | IGBT module analysis of fatigue processing method and semiconductor devices processing method |
| TWI785692B (en) * | 2020-07-29 | 2022-12-01 | 日商日立產機系統股份有限公司 | Power conversion device and remote monitoring system |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USH630H (en) * | 1988-04-05 | 1989-04-04 | The United States Of America As Represented By The Secretary Of The Army | Aging gauge |
| CA2386091A1 (en) * | 1994-09-30 | 1996-04-11 | Chromatic Technologies, Inc., | Thermochromic ink formulations, nail lacquer and methods of use |
| JP2004177304A (en) * | 2002-11-28 | 2004-06-24 | Toshiba Corp | Method for measuring lifetime of electric equipment and computer readable recording medium in which program for determining lifetime of electric equipment is recorded |
| JP2007028741A (en) * | 2005-07-14 | 2007-02-01 | Hitachi Ltd | Power converter and its management system |
| JP2007071796A (en) * | 2005-09-09 | 2007-03-22 | Fuji Electric Device Technology Co Ltd | Abnormality detector for power semiconductor device |
| JP2011196703A (en) * | 2010-03-17 | 2011-10-06 | Fuji Electric Co Ltd | Power cycle life prediction method, life prediction device, and semiconductor device including life prediction device |
| CN103068288A (en) * | 2010-07-13 | 2013-04-24 | 实现料理株式会社 | Cooker including a sensor for sensing the service life of the main body coating layer |
| CN204206666U (en) * | 2014-11-27 | 2015-03-11 | 珠海全志科技股份有限公司 | A kind of hand-hold electronic equipments of temperature sensing color changing |
| CN204651316U (en) * | 2015-05-12 | 2015-09-16 | 富士电机（中国）有限公司 | Power semiconductor modular |
-
2015
- 2015-05-12 CN CN201510240232.9A patent/CN106291299B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USH630H (en) * | 1988-04-05 | 1989-04-04 | The United States Of America As Represented By The Secretary Of The Army | Aging gauge |
| CA2386091A1 (en) * | 1994-09-30 | 1996-04-11 | Chromatic Technologies, Inc., | Thermochromic ink formulations, nail lacquer and methods of use |
| JP2004177304A (en) * | 2002-11-28 | 2004-06-24 | Toshiba Corp | Method for measuring lifetime of electric equipment and computer readable recording medium in which program for determining lifetime of electric equipment is recorded |
| JP2007028741A (en) * | 2005-07-14 | 2007-02-01 | Hitachi Ltd | Power converter and its management system |
| JP2007071796A (en) * | 2005-09-09 | 2007-03-22 | Fuji Electric Device Technology Co Ltd | Abnormality detector for power semiconductor device |
| JP2011196703A (en) * | 2010-03-17 | 2011-10-06 | Fuji Electric Co Ltd | Power cycle life prediction method, life prediction device, and semiconductor device including life prediction device |
| CN103068288A (en) * | 2010-07-13 | 2013-04-24 | 实现料理株式会社 | Cooker including a sensor for sensing the service life of the main body coating layer |
| CN204206666U (en) * | 2014-11-27 | 2015-03-11 | 珠海全志科技股份有限公司 | A kind of hand-hold electronic equipments of temperature sensing color changing |
| CN204651316U (en) * | 2015-05-12 | 2015-09-16 | 富士电机（中国）有限公司 | Power semiconductor modular |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109885884A (en) * | 2019-01-21 | 2019-06-14 | 广州供电局有限公司 | IGBT module analysis of fatigue processing method and semiconductor devices processing method |
| CN109885884B (en) * | 2019-01-21 | 2021-11-02 | 广东电网有限责任公司广州供电局 | IGBT module fatigue analysis processing method and semiconductor device processing method |
| TWI785692B (en) * | 2020-07-29 | 2022-12-01 | 日商日立產機系統股份有限公司 | Power conversion device and remote monitoring system |
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| CN106291299B (en) | 2023-09-19 |
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