CN106291299B - Power semiconductor module and thermal fatigue life judging method of power semiconductor module - Google Patents
Power semiconductor module and thermal fatigue life judging method of power semiconductor module Download PDFInfo
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- CN106291299B CN106291299B CN201510240232.9A CN201510240232A CN106291299B CN 106291299 B CN106291299 B CN 106291299B CN 201510240232 A CN201510240232 A CN 201510240232A CN 106291299 B CN106291299 B CN 106291299B
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- G—PHYSICS
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2642—Testing semiconductor operation lifetime or reliability, e.g. by accelerated life tests
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Abstract
The invention aims to protect a power semiconductor module and a thermal fatigue life judging method of the power semiconductor module. The power semiconductor module is disposed inside a housing, and a plurality of power semiconductor elements are bonded to an insulating substrate by soldering, and the insulating substrate is bonded to a base by soldering, and includes: a thermal fatigue life judging member formed on a surface side of the housing and having the following color aging characteristics: the color of the thermal fatigue life judging member at a prescribed temperature changes with the increase of the number of temperature cycles experienced by the power semiconductor module, and finally ages to a specific full aging color, and the thermal fatigue life of the power semiconductor module is judged according to the color of the thermal fatigue life judging member at the prescribed temperature.
Description
Technical Field
The present invention relates to a power semiconductor module, and more particularly, to a power semiconductor module including a power semiconductor element such as IGBT (Insulated Gate Bipolar Transistor) for performing high-power conversion, and a thermal fatigue life determination method for the power semiconductor module.
Background
In recent years, power semiconductor modules are used not only in high-power fields including power generation and power supply, but also in a wider range of fields such as household electrical appliances, railways, electric vehicles, and fuel cell power generation systems. In the above-described case, the power semiconductor module has a large influence on the quality and reliability of each application, and thus the power semiconductor module is required to have high reliability.
The power semiconductor module generates a temperature rise and a temperature fall according to a temperature change in an operation environment. The internal structure of the power semiconductor module is also thermally stressed and thermally fatigued by the rise and fall of the temperature. The thermal fatigue depends on the frequency and the amplitude of the temperature rise and fall, and thus the life of the power semiconductor module varies depending on the operating conditions and environmental conditions. This life depending on thermal stress is referred to as thermal fatigue life (thermal cycle life). In the operation of the power conversion device, when the power semiconductor module reaches its thermal fatigue life, the power conversion device may be abnormally stopped, and a production line may be stopped. While it takes a long time to find out the cause of the stoppage and repair, and thus a large economic loss may be caused. Therefore, if deterioration of the solder layer can be detected in time before the power semiconductor module reaches its thermal fatigue life, the operation of the power conversion device can be stopped in advance and the target power semiconductor module can be replaced.
In the prior art, a thermal fatigue life test (intermittent energization test) is used to estimate the operational life of a power semiconductor module. In the thermal fatigue life test, for example, in a state where the IGBT module is fixed to the radiator fan, as shown in fig. 9, power is turned on and off to raise and lower the junction temperature (Tj) of the IGBT chip, and thermal stress is generated until damage occurs. In addition, the thermal fatigue life test (intermittent energization test) is mainly classified into two main categories: Δtj thermal fatigue life test and Δtc thermal fatigue life test (refer to non-patent document 1). In the Δtc thermal fatigue life test, the energization is performed until the case temperature (Tc) rises to a certain arbitrary temperature, and the energization is stopped at a time when the case temperature reaches a certain arbitrary temperature, and then the case temperature is reduced to a state before the energization, and the test is repeated with the above cycle as one cycle. The Δtc thermal fatigue life test is mainly used to evaluate the life of a solder joint between an insulating substrate and a copper base.
Conventionally, a life estimating device for estimating the life of a power semiconductor device (power semiconductor module) using, for example, an IGBT or the like is provided (patent document 1). As shown in fig. 10, in order to estimate the lifetime of the IGBT module 82 constituting the inverter, the lifetime estimating device includes: a temperature sensor 10 that detects the temperature of the copper substrate of the IGBT module; an a/D converter 20 for a/D converting the output of the temperature sensor at a predetermined sampling period; a lifetime calculation circuit 30 for detecting a temperature difference based on the output of the a/D converter, comparing the detected temperature difference with a prestored inflection point temperature difference, and calculating lifetime from a slope of an approximate straight line and a preset reference temperature difference on the straight line, which are read from the operation parameters stored in the lifetime data memory 40, based on one side of a plurality of straight lines for approximating a thermal fatigue lifetime curve obtained by analyzing a thermal fatigue lifetime experiment performed in advance, based on the detected temperature difference detected based on the comparison result, and outputting lifetime information; and a lifetime data memory 40 storing operation parameters required for lifetime operation in the lifetime operation circuit 30.
Prior art literature
Patent literature
Patent document 1: japanese patent laid-open publication No. 2011-196703
Non-patent literature
Non-patent document 1: 2 out of Shigao (2 out of Shigao) about one's back, one's back , one's back , one's fuji time paper, vol.74, no.2, pp.45-48,2001 years
Disclosure of Invention
Problems to be solved by the invention
In the power semiconductor device described in patent document 1, it is necessary to mount the temperature sensor 10 inside the power semiconductor device, and when calculating the thermal fatigue life, life information with respect to different reference temperature differences, a calculation formula for accumulated damage, and the like are required, which causes problems such as an increase in circuit scale, a complicated calculation, an increase in required memory amount, and the like.
The present invention has been made in view of the above-described problems, and an object of the present invention is to provide a power semiconductor module and a method for determining the thermal fatigue life of the power semiconductor module, which have a small size, a simple thermal fatigue life determining process, and reduced costs.
Technical proposal adopted for solving the technical problems
A first aspect of the present invention relates to a power semiconductor module provided inside a case, in which a plurality of power semiconductor elements are bonded to an insulating substrate by soldering, and the insulating substrate is bonded to a base by soldering, comprising:
a thermal fatigue life judging member formed on a surface side of the housing and having the following color aging characteristics: the color exhibited by the thermal fatigue life judging member at a prescribed temperature changes with an increase in the number of temperature cycles undergone by the power semiconductor module, and eventually ages to a specific fully aged color,
and judging the thermal fatigue life of the power semiconductor module according to the color of the thermal fatigue life judging component at the specified temperature.
A second aspect of the present invention is directed to the power semiconductor module according to the first aspect, wherein the thermal fatigue life determining member is formed at a portion corresponding to the power semiconductor element on the front surface side of the case.
A third aspect of the present invention relates to the power semiconductor module of the first aspect, characterized in that the power semiconductor element is an IGBT.
A fourth aspect of the present invention relates to the power semiconductor module of the first aspect, characterized in that the thermal fatigue life judging member is formed of a thermochromic ink whose color appears to change according to a change in temperature.
A fifth aspect of the present invention is directed to a thermal fatigue life judging method of a power semiconductor module, which is applied to the power semiconductor module of the first aspect of the present invention, comprising:
a detection step of detecting the color represented by the thermal fatigue life judging means of claim 1 by an optical instrument at a predetermined interval at a predetermined temperature and outputting a color detection result when the power semiconductor module is in operation;
a comparison step of comparing the color analysis result outputted in the detection step with a color-lifetime data correspondence table stored in advance in a memory; and
a judging step of judging whether a predetermined value of a thermal fatigue life of the power semiconductor module has been exceeded based on the result of the comparison,
the life data correspondence table stores in advance data of correspondence relation between the color of the thermal fatigue life judging member obtained through the thermal fatigue life experiment and the thermal fatigue life of the power semiconductor module.
A sixth aspect of the present invention relates to the method for judging thermal fatigue life of a power semiconductor module according to the fifth aspect, wherein the optical instrument is a laser spectrometer.
A seventh aspect of the present invention relates to the thermal fatigue life judging method of the power semiconductor module of the fifth aspect, further comprising: and a signal output step of outputting an early warning signal when the determined thermal fatigue life of the power semiconductor module exceeds a predetermined value.
An eighth aspect of the present invention relates to the method for judging thermal fatigue life of a power semiconductor module according to the seventh aspect, wherein the predetermined value is 80% of the total thermal fatigue life of the power semiconductor module.
Effects of the invention
According to the power semiconductor module and the thermal fatigue life judging method of the power semiconductor module, the size of the power semiconductor module can be reduced, the judging process of the thermal fatigue life is simplified, and the cost is reduced.
Drawings
Fig. 1a is a plan view schematically showing a power semiconductor module according to embodiment 1, and fig. 1b is a side view schematically showing a power semiconductor module according to embodiment 1.
Fig. 2 is an equivalent circuit diagram schematically showing a power semiconductor module according to embodiment 1.
Fig. 3 is a cross-sectional configuration diagram of the power semiconductor module according to embodiment 1.
Fig. 4 is a diagram showing the energization pattern of the Δtc thermal fatigue life test according to embodiment 1 of the present invention.
Fig. 5 shows a graph of the experimental results of the above-described Δtc thermal fatigue life experiment.
Fig. 6 is a table illustrating a relationship between color and life characteristics of the thermal fatigue life determining member according to embodiment 1 of the present invention.
Fig. 7 is a schematic diagram of an apparatus for judging the thermal fatigue life of a power semiconductor module according to embodiment 1 of the present invention.
Fig. 8 is a flowchart showing a method for determining the thermal fatigue life of the power semiconductor module according to embodiment 1 of the present invention.
Fig. 9 is a diagram schematically showing the operating conditions in the thermal fatigue life test.
Fig. 10 is a diagram showing a structure of a thermal fatigue life estimating device according to the related art.
Detailed Description
Embodiments of the present invention will be described below with reference to the drawings. However, the following embodiments are merely examples. The present invention is not limited to any of the following embodiments.
In the drawings to which the embodiments and the like refer, members having substantially the same function are referred to by the same reference numerals. Further, the drawings to which the embodiments and the like refer are schematically described, and the dimensional ratio and the like of an object drawn in the drawings may be different from the dimensional ratio and the like of an object in reality. The dimensional ratios of objects and the like may also be different from one figure to another. The size ratio of a specific object and the like should be judged with reference to the following description.
Embodiment 1.
Next, embodiment 1 of the present invention will be described with reference to fig. 1 to 8.
(Power semiconductor Module 1)
The power semiconductor module of the present invention is not limited to the internal circuit configuration, but in embodiment 1, a three-phase bridge inverter circuit (6 in1IGBT module) having power semiconductor elements 41 to 46 each composed of IGBTs 41a to 46a and flywheel diodes 41b to 46b is used as the power semiconductor module 1.
Fig. 1a is a plan view schematically showing the power semiconductor module 1 according to embodiment 1, and fig. 1b is a side view schematically showing the power semiconductor module 1 according to embodiment 1. Fig. 2 is an equivalent circuit diagram schematically showing the power semiconductor module 1 according to embodiment 1.
As shown in fig. 1a, an upper arm constituted by an IGBT41a, a flywheel diode 41b, an IGBT42a, a flywheel diode 42b, an IGBT43a, and a flywheel diode 43b is formed on the left side of the power semiconductor module 1, and a lower arm constituted by an IGBT44a, a flywheel diode 44b, an IGBT45a, a flywheel diode 45b, an IGBT46a, and a flywheel diode 46b is formed on the right side of the power semiconductor module 1.
As shown in fig. 1b, a thermal fatigue life determining member 3 is formed on the front surface of the housing 2 of the power semiconductor module 1. The above-described thermal fatigue life determining member may be formed on the rear surface of the case 2. The thermal fatigue life determining member 3 is preferably formed on the front surface side of the case 2 at a position corresponding to the IGBT inside the case.
As an example of the thermal fatigue life determining member 3, for example, a thermochromic ink whose color is changed according to a change in temperature is cited. Specifically, in the temperature range of 25 ℃ to 70 ℃, the color of the thermochromic ink gradually fades from dark orange with the temperature rise, and when the temperature rises to 70 ℃ or higher, the color of the thermochromic ink becomes colorless; and when the temperature starts to decrease from 70 ℃, the color of the thermochromic ink gradually becomes dark from colorless as the temperature decreases, and returns to dark orange around 25 ℃.
Further, the color of the thermochromic ink changes due to an increase in the number of temperature changes, and finally, a dark green color is exhibited as a completely aged color at a prescribed temperature, for example, 95 ℃.
The thermochromic ink may be formed on the surface side of the case 2 by coating, adhesion, or the like. The thickness is 100um-300um.
The thermal fatigue life determining member 3 is not limited to the thermochromic ink, and may be, for example, agI or Ag, as long as it changes its color in a certain temperature range with an increase in temperature, changes its color again to its original color when the temperature decreases, and finally exhibits a completely aged color at a predetermined temperature with an increase in the number of temperature changes 2 S, and the like.
Fig. 2 is an equivalent circuit diagram schematically showing a power semiconductor module according to embodiment 1. As shown in fig. 2, in the power semiconductor module 1, the power semiconductor element 41 has a structure in which an IGBT41a and a flywheel diode 41b are connected in anti-parallel. The other power semiconductor elements 42 to 46 have the same structure.
(Power semiconductor element 41)
Fig. 3 is a cross-sectional configuration diagram of the power semiconductor module 1 according to embodiment 1.
As described above, the power semiconductor element 41 includes the IGBT41a and the flywheel diode 41b for protecting the IGBT41a. The insulated substrate 930 with circuit patterns 921, 922, 923 on both sides is bonded to the base 910 via the bonding layer 920, and the IGBT41a is mounted on the circuit pattern 922 via the bonding layer 940. Similarly, the flywheel diode 41b is mounted on the circuit pattern 923 through the solder layer 950.
The substrate 910 may be a copper substrate. The solder layers 920, 940, 950 may be tin-based alloy materials. The base 910 is bonded to the bonding portion of the case 2 by an adhesive or the like.
The power semiconductor elements 42, 43, 44, 45, 46 have the same structure as the power semiconductor element 41.
(. DELTA.Tc thermal fatigue life failure model)
The failure model of Δtc thermal fatigue life is specifically described in the following description of the structure of the power semiconductor element 41.
After the power semiconductor module 1 starts to operate, the case temperature Tc increases, and after the power semiconductor module stops operating, the case temperature Tc gradually decreases. Since the thermal expansion coefficients of the insulating substrate 930 and the base 910 are different, the rise and fall of the temperature may cause stress deformation in the solder layer 920 between the insulating substrate 930 and the base 910. If the temperature change is repeated, the stress strain may cause the weld layer 920 to crack 19 or the like. If the crack or the like is gradually expanded and extended to the insulating substrate 930 on which the IGBT41a is mounted, the junction temperature Tj increases due to deterioration of the heat radiation performance of the IGBT41a. As a result, when the junction temperature exceeds the heat-resistant temperature Tjmax, thermal destruction of the power semiconductor module 1 occurs.
Thus, the lifetime of the solder layer 920 between the insulating substrate 930 and the mount 910 in the power semiconductor module 1 was evaluated using Δtc thermal fatigue lifetime.
(. DELTA.Tc thermal fatigue life experiment)
Next, a Δtc thermal fatigue life experiment according to the present invention will be described based on fig. 4.
In this Δtc thermal fatigue life test, six phases of the power semiconductor module 1 were energized from room temperature of 25 ℃ to raise the overall temperature of the housing 2, and when the temperature reached 100 ℃, the energization was turned off, and then the overall temperature of the housing 2 was lowered to a state before the energization, and the period was defined as one cycle. The above-mentioned heating and cooling processes are repeated.
The energization time ton is approximately 1 to 3 minutes, and the off time toff is approximately 10 to 20 minutes.
Fig. 5 shows a graph of the experimental results of the above-described Δtc thermal fatigue life experiment.
As shown in fig. 5, the Δtc thermal fatigue life of the power semiconductor module 1 depends on the temperature rise amplitude in the cycle. For example, when Δtc is 70 ℃, and the number of temperature cycles reaches 22,000, the power semiconductor module 1 may be close to the full length of Δtc thermal fatigue life, and thermal destruction may occur in the solder layer 920 between the insulating substrate 930 and the mount 910 in the power semiconductor module 1.
(detection of color of thermal fatigue Life judging Member)
The inventors of the present invention performed the above-described Δtc thermal fatigue life experiment while detecting the color of the thermal fatigue life determining member 3 formed on the front surface of the case 2 with the laser color separator 20. Here, the thermal fatigue life determining member will be described as an example.
As a result, when the temperature is higher than 95 ℃ at a temperature Δtc of 70 ℃ and the number of temperature cycles of about 15400, the thermal fatigue life determining member starts to gradually appear light green, and as the number of temperature cycles gradually approaches 22,000, the green appearing by the thermal fatigue life determining member gradually becomes deep and finally appears dark green.
That is, when Δtc is 70 ℃, the number of temperature cycles is close to 70% of the total thermal fatigue life, and the temperature exceeds 95 ℃, the thermal fatigue life determining member starts to appear light green, and as the number of temperature cycles gradually approaches the total thermal fatigue life of the power semiconductor element, the thermal fatigue life determining member appears dark green as its fully aged color.
Fig. 6 shows, for example, the detection result of the color of the thermal fatigue life determining means, and stores the detection result as a color-life data correspondence table in a memory 301 described later.
The detection device is not limited to the laser beam splitter 20, and may be a device capable of detecting the color of the thermal fatigue life determining member 3.
(device for judging thermal fatigue life of Power semiconductor Module)
Fig. 7 is a block diagram schematically showing a device for determining the thermal fatigue life of a power semiconductor module according to embodiment 1 of the present invention. The device for judging the thermal fatigue life of the power semiconductor module comprises: a laser color separator 20, the laser color separator 20 detecting the color of the thermal fatigue life judging member 3 formed on the surface of the power semiconductor module 1 at regular intervals based on an instruction from the control section 10; a comparator 30 for comparing the detection result of the laser beam splitter 20 with data in a color-lifetime data correspondence table (for example, fig. 6) obtained by detecting the color of the thermal fatigue lifetime determination means in the Δtc thermal fatigue lifetime experiment, which is stored in advance in the memory 301, and transmitting the comparison result to the control unit 10; and a control unit 10 that instructs the laser beam splitter 20 to detect at regular intervals at a predetermined temperature during operation of the power semiconductor module, determines whether or not a predetermined value of the thermal fatigue life of the power semiconductor module 1 has been exceeded based on a comparison result input from the comparator 30, and issues an alarm when it is determined that the predetermined value of the thermal fatigue life of the power semiconductor module 1 has been exceeded, and instructs the laser beam splitter 20 to detect again when it is determined that the predetermined value of the thermal fatigue life of the power semiconductor module 1 has not been exceeded, the predetermined value being preset by an operator, and may be set to 80% of the total thermal fatigue life, for example.
Next, a flow of a thermal fatigue life determination method of a power semiconductor module according to embodiment 1 of the present invention will be described with reference to fig. 8.
First, the color of the thermal fatigue life determining member 3 formed on the surface of the power semiconductor module 1 is detected at regular intervals at a predetermined temperature, and the detection result is output.
The detection result is compared with data in a color-lifetime data correspondence table stored in advance in a memory, and the comparison result is output.
Whether the predetermined value of the thermal fatigue life of the power semiconductor module 1 is exceeded or not is determined based on the comparison result, and an alarm is issued when it is determined that the predetermined value of the thermal fatigue life of the power semiconductor module 1 has been exceeded. In the case where it is determined that the power semiconductor module 1 has not exceeded the predetermined value of its thermal fatigue life, the color detection of the thermal fatigue life determining means 3 is instructed again. For example, when the color of the thermal fatigue life judging member is detected to be green, it is judged that the thermal fatigue life thereof has exceeded 80% of the total thermal fatigue life thereof, and an alarm is issued to prompt the operator.
As described above, the thermal fatigue life determining means 3 is formed on the surface of the case 2 of the power semiconductor module 1, and the thermal fatigue life of the power semiconductor module is determined by detecting the color of the thermal fatigue life determining means when the power semiconductor module is in operation and comparing the result of the detection with the data in the color-life data correspondence table stored in advance.
According to embodiment 1, the volume of the power semiconductor module can be reduced, the thermal fatigue life determination process can be simplified, and the cost can be reduced.
Although the embodiments of the present invention have been described, the above embodiments are presented as examples only and are not intended to limit the scope of the invention. The novel embodiment can be implemented in various other modes, and various omissions, substitutions, and changes can be made without departing from the scope of the invention. The above embodiments and modifications thereof are included in the scope and gist of the invention, and are included in the invention described in the patent claims and the equivalents thereof.
Description of the reference numerals
1. Power semiconductor module
2. Shell body
3. Thermal fatigue life judging member
41-46 power semiconductor element
41a～46a IGBT
41 b-46 b freewheeling diode
910. Substrate
920 940, 950 weld layer
921-923 circuit layout
930. Insulating substrate
19. Cracking of
10. Control unit
20. Laser colour separator
30. Comparator with a comparator circuit
301. A memory.
Claims (8)
1. A power semiconductor module, which comprises a semiconductor substrate,
the power semiconductor module is disposed inside a housing, and a plurality of power semiconductor elements are bonded to an insulating substrate by soldering, and the insulating substrate is bonded to a base by soldering, and the power semiconductor module comprises:
a thermal fatigue life judging member formed on a surface side of the housing and having the following color aging characteristics: the color exhibited by the thermal fatigue life judging member at a prescribed temperature changes with an increase in the number of temperature cycles undergone by the power semiconductor module, and eventually ages to a specific fully aged color,
and judging the thermal fatigue life of the power semiconductor module according to the color of the thermal fatigue life judging component at the specified temperature.
2. The power semiconductor module of claim 1, wherein,
the thermal fatigue life judging member is formed at a portion corresponding to the plurality of power semiconductor elements on a surface side of the case.
3. The power semiconductor module of claim 1, wherein,
the power semiconductor element includes an IGBT.
4. The power semiconductor module of claim 1, wherein,
the thermal fatigue life judging member is formed of a thermochromic ink whose color appears to change according to a change in temperature.
5. A thermal fatigue life judging method of a power semiconductor module, adapted to the power semiconductor module of claim 1, comprising:
a detection step of detecting a color represented by the thermal fatigue life judging means of claim 1 by an optical instrument at a predetermined temperature at regular intervals and outputting a color detection result when the power semiconductor module is in operation;
a comparison step of comparing the color analysis result outputted in the detection step with a color-lifetime data correspondence table stored in advance in a memory; and
a judging step of judging whether a predetermined value of a thermal fatigue life of the power semiconductor module has been exceeded based on the result of the comparison,
the life data correspondence table stores in advance data of correspondence relation between the color of the thermal fatigue life judging member obtained through the thermal fatigue life experiment and the thermal fatigue life of the power semiconductor module.
6. The method for judging the life of a power semiconductor module according to claim 5, wherein,
the optical instrument is a laser spectrometer.
7. The method for judging thermal fatigue life of a power semiconductor module according to claim 6, further comprising:
and a signal output step of outputting an early warning signal when the thermal fatigue life of the power semiconductor module is judged to exceed the preset value.
8. The method for judging the life of a power semiconductor module according to claim 7,
the predetermined value is 80% of the total thermal fatigue life of the power semiconductor module.
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| JP7494041B2 (en) * | 2020-07-29 | 2024-06-03 | 株式会社日立産機システム | Power conversion device and remote monitoring system |
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