CN109885884A - IGBT module analysis of fatigue processing method and semiconductor devices processing method - Google Patents
IGBT module analysis of fatigue processing method and semiconductor devices processing method Download PDFInfo
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- CN109885884A CN109885884A CN201910053020.8A CN201910053020A CN109885884A CN 109885884 A CN109885884 A CN 109885884A CN 201910053020 A CN201910053020 A CN 201910053020A CN 109885884 A CN109885884 A CN 109885884A
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Abstract
This application involves IGBT module analysis of fatigue processing methods, comprising steps of establishing the finite element model of IGBT module；Electric-thermal-structure Coupling calculates；Draw strain fatigue curve；Calculate the fatigue damage value of each unit of IGBT module；Determine the finite element model of power cycle next time；Establish the status assessment model of IGBT module.In this way, it dexterously devises the finite element model of IGBT module and carries out the calculating and analysis of accumulating injuring value accordingly, so as to accurately obtain IGBT module fatigue failure mechanism, solves the drawbacks of conventional numeric analysis method can not simulate physical characteristic during crack Propagation, and overcomes the problems, such as that test method(s) cost is big, is difficult to further investigate module life-cycle fatigue properties, and the crack initiation phase and crack propagation phase for considering IGBT module fatigue failure comprehensively realize the accurate simulation analysis to IGBT module life-cycle fatigue.
Description
Technical field
This application involves IGBT module fatigue failure fields, more particularly to IGBT module analysis of fatigue processing method and half
Conductor device processing method, also referred to as IGBT module life-cycle analysis of fatigue processing method and semiconductor devices analysis of fatigue are more
Change method.
Background technique
In recent years, IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) and its
The extensive use of correlation module has brought power electronic technique into the brand-new epoch.With IGBT module current carrying density and
The continuous improvement of voltage level, loss increase rapidly therewith, and volume is opposite to be reduced, electricity, mechanics and the heat that module is born
It is increasingly heavier to learn load.According to statistics, 49% component failure is related to heat problem, and the thermal failure form under power cycle is key
Close the fatigue failure of lead.Therefore, the Fatigue Failures for studying IGBT module are that have very important engineering significance.
The IGBT module failure fatigue phase can be divided into according to fatigue life theory: crack initiation phase and crack propagation phase,
In order to study the fatigue failure mechanism of IGBT module, many correlative studys have been carried out at present, but comprehensive and accurate can not all study
IGBT module fatigue failure mechanism, these method defects are as follows:
(1) it is analyzed according to the analytic method of fatigue life statistical theory:
Such methods are referred to as analytic method, it is believed that the failure of IGBT module is related to junction temperature, time, frequency, average value etc..
It generallys use statistical counting method and comes Extracting temperature amplitude cycle-index and mean value cycle-index, then using associated injury accumulation reason
By the injury tolerance and service life for calculating offline power device, the state of IGBT module is then assessed according to service life, but it is this
Method can only be carried out for specific object, not have universality, and required time and cost are larger, can only generally also consider IGBT
The single operating condition of module is difficult for having for the IGBT module under the complex working condition of extraneous radiating condition variation, load variations
To its fatigue failure mechanism.
(2) based on the Fatigue Invalidation Analysis method of multiple physical field coupling analysis
Such methods are calculated by electric-thermal-structure multiple physical field, and the multiple physical field studied in module operational process is special
Property, the fatigue life of module is further predicted based on ess-strain result, and then have evaluated the Cumulative Fatigue Damage of module, so
And it focuses primarily upon crackle and sprouts the stage, does not consider influence of the crack propagation to physical characteristic, to being related to Module Fail
It is not analyzed during the crack Propagation of information, accordingly, it is difficult to comprehensively study the fatigue failure mechanism of module.
(3) accelerate fatigue failure test
For IGBT module crack Propagation research at present mainly using experimental method, utilize the examination that accelerates fatigue
It tests and failure research is carried out to IGBT module, by testing the failure sample for obtaining IGBT module under power cycle effect, then
The fatigue damage of Observation Blocks each section material under the microscope, test method(s) can study the fatigue crack of specific operation lower module
Mechanism is extended, but does not have universality for IGBT module fatigue properties under complex working condition, and required time and cost are very big.
Summary of the invention
Based on this, it is necessary to provide a kind of IGBT module analysis of fatigue processing method and semiconductor devices processing method.
A kind of IGBT module analysis of fatigue processing method comprising following steps:
Step S1, it establishes the finite element model of IGBT module: IGBT module is established according to the actual size of IGBT module
Geometrical model obtains the finite element model of IGBT module by carrying out mesh generation to the geometrical model；
Step S2, electric-thermal-structure Coupling calculates: calculating function by electric-thermal-structure Coupling according to the finite element model
Rate recycles the thermal stress and Strain Distribution that lower IGBT module generates, and records distribution results；
Step S3, it draws strain fatigue curve: fatigue life is carried out by the material standard part to each component of IGBT module
Test obtains the alternate strain of component receiving and the relationship between the fracture circulating cycle time as strain fatigue curve；
Step S4, the fatigue damage value of each unit of IGBT module is calculated: according to the strain fatigue curve, described in calculating
Unit is subjected to the fatigue damage value repeatedly recycled under the effect of multiple strain levels, and according to fatigue damage value determination
The accumulating injuring value of unit；
Step S5, it determines the finite element model of power cycle next time: the unit is judged according to the accumulating injuring value
Whether fail, and continued to determine new IGBT module finite element model according to the unit not failed, return continues to execute step S2
Until all units all fail；
Step S6, the status assessment model of IGBT module is established: according to the failure conditions and electric-thermal-knot of each unit
Structure couples the distribution results being calculated, and establishes the status assessment model of IGBT module life-cycle fatigue failure.
Above-mentioned IGBT module analysis of fatigue processing method, dexterously devise the finite element model of IGBT module and accordingly into
The calculating and analysis of row accumulating injuring value solve traditional number so as to accurately obtain IGBT module fatigue failure mechanism
Value analysis method can not simulate the drawbacks of physical characteristic during crack Propagation, and overcome test method(s) spend it is big, be difficult to depth
The problem of entering to study module life-cycle fatigue properties, and crack initiation phase and the crackle of IGBT module fatigue failure are considered comprehensively
Growth period realizes the accurate simulation analysis to IGBT module life-cycle fatigue.
In one of the embodiments, in step S1, when carrying out mesh generation to the geometrical model, it may go out in crackle
Existing position carries out refined net subdivision to the geometrical model.
Mesh generation is carried out so that a possibility to the geometrical model according to historical data in one of the embodiments,
Crackle is located in a grid.
In one of the embodiments, in step S2, apply power cycle load, function is calculated by electric-thermal-structure Coupling
Rate recycles the thermal stress and Strain Distribution that lower IGBT module generates.
In one of the embodiments, in step S3, by carrying out fatigue life test to IGBT module material, portion is obtained
The different alternate strain and corresponding breaks that part is born carry out data and are fitted to obtain the strain fatigue curve.
In one of the embodiments, in step S3, it should weaken also according to the processing technology of target operation environment to described
Labor curve is modified processing.
In one of the embodiments, in step S4, life-cycle fatigue is divided by fatigue crack according to critical fatigue damage
Germinating stage and crack Propagation stage, and separation when to use accumulating injuring value be 1 as two stages is to determine
State the stage locating for unit.
In one of the embodiments, in step S5, whether failed using unit described in Life-and-death element technical mark.
In one of the embodiments, in step S6, the IGBT is set or adjusted also according to the status assessment model
The operation reserve of module.
A kind of semiconductor devices processing method uses IGBT module analysis of fatigue processing method described in any of the above-described real
It is existing, the operation reserve of semiconductor devices is set according to the status assessment model, and the semiconductor devices include IGBT,
MOSFET pipe, thyristor and/or diode component.
Detailed description of the invention
Fig. 1 is the flow diagram of one embodiment of the application.
Fig. 2 is the flow diagram of another embodiment of the application.
Fig. 3 is the simulation model and FEM model schematic diagram of the IGBT module of another embodiment of the application.
The Temperature Distribution schematic diagram of IGBT module when Fig. 4 is the 16s of another embodiment of the application.
The Potential Distributing schematic diagram of IGBT module when Fig. 5 is the 16s of another embodiment of the application.
The thermal stress distribution schematic diagram of IGBT when Fig. 6 is the 16s of another embodiment of the application.
Fig. 7 is the equivalent ductility deformation schematic diagram of the 16s bonding wire of another embodiment of the application.
Fig. 8 is aluminium substrate failure conditions schematic diagram after power cycle 10000 times of another embodiment of the application.
Fig. 9 is aluminium substrate failure conditions schematic diagram after power cycle 12500 times of another embodiment of the application.
Figure 10 is aluminium substrate failure conditions schematic diagram after power cycle 13200 times of another embodiment of the application.
Figure 11 is aluminium substrate failure conditions schematic diagram after power cycle 13700 times of another embodiment of the application.
Figure 12 is potential change curve synoptic diagram under the different cycle-indexes of another embodiment of the application.
Figure 13 is the different cycle-index lower casing temperature change curve schematic diagrames of another embodiment of the application.
Specific embodiment
In order to make the above objects, features, and advantages of the present application more apparent, with reference to the accompanying drawing to the application
Specific embodiment be described in detail.Many details are explained in the following description in order to fully understand this Shen
Please.But the application can be implemented with being much different from other way described herein, those skilled in the art can be not
Similar improvement is done in the case where violating the application intension, therefore the application is not limited by the specific embodiments disclosed below.
It should be noted that it can be directly another when element is referred to as " being fixed on " or " being set to " another element
On one element or there may also be elements placed in the middle.When an element is considered as " connection " another element, it can be with
It is directly to another element or may be simultaneously present centering elements.Term as used herein " vertically ", " level
", "left", "right" and similar statement for illustrative purposes only, be not meant to be the only embodiment.
Unless otherwise defined, all technical and scientific terms used herein and the technical field for belonging to the application
The normally understood meaning of technical staff is identical.The term used in the description of the present application is intended merely to description tool herein
The purpose of the embodiment of body, it is not intended that in limitation the application.Term " and or " used herein includes one or more
Any and all combinations of relevant listed item.
The application provides a kind of IGBT module analysis of fatigue processing method, the also referred to as analysis of fatigue of IGBT module life-cycle
Method solves the drawbacks of conventional numeric analysis method can not simulate physical characteristic during crack Propagation, and overcomes test
Method cost is big, is difficult to the problem of furtheing investigate module life-cycle fatigue properties, considers the crackle of IGBT module fatigue failure comprehensively
Germinating phase and crack propagation phase, in one of the embodiments, as shown in Figure 1, the IGBT module analysis of fatigue processing method
The following steps are included: step S1, establishing the finite element model of IGBT module: establishing IGBT mould according to the actual size of IGBT module
The geometrical model of block obtains the finite element model of IGBT module by carrying out mesh generation to the geometrical model；Step S2,
Electric-thermal-structure Coupling calculates: calculating IGBT module under power cycle by electric-thermal-structure Coupling according to the finite element model
The thermal stress and Strain Distribution of generation, and record distribution results；Step S3, strain fatigue curve is drawn: by IGBT module
The material standard part of each component carries out fatigue life test, obtains the alternate strain of component receiving and between the fracture circulating cycle time
Relationship is as strain fatigue curve；Step S4, the fatigue damage value of each unit of IGBT module is calculated: according to the strain fatigue
Curve calculates the unit and is subjected to the fatigue damage value repeatedly recycled under the effect of multiple strain levels, and according to the fatigue
Impairment value determines the accumulating injuring value of the unit；Step S5, the finite element model of power cycle next time is determined: according to described
Accumulating injuring value judges whether the unit fails, and is continued to determine new IGBT module finite element mould according to the unit not failed
Type returns and continues to execute step S2 until all units all fail；Step S6, the status assessment of IGBT module is established
Model: the distribution results being calculated according to the failure conditions of each unit and electric-thermal-structure Coupling establish IGBT
The status assessment model of module life-cycle fatigue failure.Above-mentioned IGBT module analysis of fatigue processing method, dexterously devises
The finite element model of IGBT module and the calculating and analysis for carrying out accumulating injuring value accordingly, so as to accurately obtain IGBT mould
Block fatigue failure mechanism solves the drawbacks of conventional numeric analysis method can not simulate physical characteristic during crack Propagation,
And overcomes the problems, such as that test method(s) cost is big, is difficult to further investigate module life-cycle fatigue properties, and consider IGBT mould comprehensively
The crack initiation phase and crack propagation phase of block fatigue failure realize the accurate simulation analysis to IGBT module life-cycle fatigue.
A kind of IGBT module analysis of fatigue processing method in one of the embodiments, comprising the part of following steps
Or all；That is, some technical characteristics or whole technologies that the IGBT module analysis of fatigue processing method includes the following steps are special
Sign.
The IGBT module analysis of fatigue processing method is the following steps are included: establish IGBT in one of the embodiments,
The finite element model of module；Electric-thermal-structure Coupling calculates；Draw revised strain fatigue curve (ε-N curve)；It calculates single
The fatigue damage value of member；Determine the finite element model of power cycle next time；Restart electric-thermal-structure Coupling to calculate, compute repeatedly
Step can analyze the physical quantity variation rule of the IGBT module under different crackles, and the life-cycle fatigue for simulating IGBT module is special
Property, and then the assessment models of IGBT module are established, formulate operation reserve.A kind of IGBT module is tired in one of the embodiments,
Labor analysis and processing method comprising following steps: the finite element model of IGBT module step S1, is established: according to IGBT module
Actual size establishes the geometrical model of module, and the finite element model of IGBT can be obtained by mesh generation；Step S2, electric-thermal-
Structure Coupling calculates: calculating thermal stress/Strain Distribution that power cycle lower module generates by electric-thermal-structure Coupling；Step
S3, it draws revised strain fatigue curve (ε-N curve): by carrying out fatigue life test to IGBT module material, obtaining
The alternate strain and the relationship between the fracture circulating cycle time that component is born, i.e., basic ε-N curve consider practical on this basis
The process done is processed, basic ε-N curve is modified, revised ε-N curve is obtained；Step S4, computing unit
Fatigue damage value: according to revised ε-N curve, it is based on Miner linear cumulative damage law, can determine strain level εiMake
Accumulated damage under is as follows: component is being subjected to niThe damage of secondary circulation is Di=ni/Ni.If in k strain level εiUnder effect,
Respectively it is subjected to niSecondary circulation then can determine that the fatigue damage of each unit is as follows:
If n=0, D=0, component does not occur fatigue damage, and unit physical characteristic will not change, if n=N, D=1, part
Element failure, into the crack propagation phase；Step S5, the finite element model of power cycle next time is determined: according to the side of step 4)
Method, comes whether judging unit fails, and the unit of failure is described by killing unit, and the unit of not up to Critical Damage is made a living
Unit.It can determine that new IGBT module finite element model, crackle carry out next step extension by Life-and-death element technology；Step
S6, restart electric-thermal-structure Coupling calculating: carrying out electric-thermal-structure Coupling under new finite element model and calculate, repeat step S4
The physical quantity variation rule that the IGBT module under different crackles can be analyzed to S5, the life-cycle fatigue for simulating IGBT module are special
Property, and then the assessment models of IGBT module are established, formulate operation reserve.Above-mentioned IGBT module analysis of fatigue processing method is ingenious
Finite element model is established according to target geometric parameter and operating condition in ground, carries out electric-thermal-structure Coupling and calculates, and calculates analysis accordingly
Unit accumulating injuring value studies the changing rule of relevant physical parameter, so as to accurately obtain IGBT module fatigue failure
Mechanism solves the drawbacks of conventional numeric analysis method can not simulate physical characteristic during crack Propagation, and overcomes examination
Test method spend it is big, be difficult to the problem of furtheing investigate module life-cycle fatigue properties, and consider IGBT module fatigue failure comprehensively
Crack initiation phase and crack propagation phase, realize to the analysis of the accurate simulation of IGBT module life-cycle fatigue.
In one of the embodiments, as shown in Fig. 2, IGBT module analysis of fatigue processing method is the following steps are included: open
Begin；Establish the finite element model of IGBT module；Apply power cycle load, total fatigue life Nf=Nf+1；Electric-thermal-structure coupling
It is total to calculate；It is calculated by electric-thermal-structure Coupling, whether the impairment value of computing unit, judging unit is more than critical fatigue damage,
It is the unit for killing failure, further judges whether device fails, be to terminate, otherwise returns and continue to power cycle load
Lotus.Wherein, whether judging unit is more than critical fatigue damage, otherwise returns and continues to power cycle load.Also pass through electricity-
Thermal-structure coupled calculates, the changing rule of analysis analysis relevant parameter；Establish the assessment models of IGBT module.Also, using low
All testing fatigues determine that strain fatigue curve, cooperation electric-thermal-structure Coupling calculate, the impairment value of common computing unit.
The IGBT module analysis of fatigue processing method includes step S1, establishes IGBT mould in one of the embodiments,
The finite element model of block: establishing the geometrical model of IGBT module according to the actual size of IGBT module, by the geometry mould
Type carries out mesh generation and obtains the finite element model of IGBT module；In one of the embodiments, in step S1, to the geometry
When model carries out mesh generation, refined net subdivision is carried out to the geometrical model in the position that crackle is likely to occur.Wherein
In one embodiment, mesh generation is carried out to the geometrical model according to historical data so that a possible crackle is located at described in one
In grid.Further, when establishing the finite element model of IGBT module, geometrical model regional area should encrypt subdivision, especially
It is that so when carrying out subsequent step such as step S5, just can guarantee that crackle span is unlikely in the position that crackle is likely to occur
It is excessive, improve the accuracy of simulation.IGBT module is established according to the actual size of IGBT module in one of the embodiments,
Geometrical model, the geometrical model including establishing IGBT module according to the actual size of IGBT module, geometric parameter and operating condition.
In one of the embodiments, according to target geometric dimension parameter, the geometrical model of IGBT module is established.Wherein
In one embodiment, mesh generation is carried out to the geometrical model, comprising: mesh generation is carried out so as to split to the geometrical model
Mesh-density is big at the position that line is likely to occur.Such design, grid can reflect the situation of possible crackle conscientiously, to have
Help be promoted the accuracy of simulation, so that subsequent step determines that the accumulation of the unit is damaged according to the fatigue damage value
Wound value more precisely reflects the fatigue damage of target.Change little position at this point for field amount, is not necessarily to encryption, in this way
Be conducive to save computing resource.
The IGBT module analysis of fatigue processing method includes step S2, electric-thermal-structure in one of the embodiments,
Coupling calculates: calculating the heat that IGBT module generates under power cycle by electric-thermal-structure Coupling according to the finite element model and answers
Power and Strain Distribution, and record distribution results；In one of the embodiments, in step S2, applies power cycle load, pass through
Electric-thermal-structure Coupling calculates the thermal stress and Strain Distribution that IGBT module generates under power cycle.One embodiment wherein
In, it carries out electric-thermal-structure Coupling and calculates, comprising: apply load, the IGBT module is calculated by electric-thermal-structure Coupling and is produced
Raw thermal stress and Strain Distribution.Traditional technology reality can be used in specific application load and electric-thermal-structure Coupling calculation method
Show, not the application range claimed, the application and its each embodiment are only with this technology.Wherein one
In a embodiment, carries out electric-thermal-structure Coupling and calculate, comprising: apply power cycle load, pass through electric-thermal-structure Coupling meter
Thermal stress and Strain Distribution that the IGBT module generates are calculated, and obtains other relevant physical parameters, for example, potential, temperature
Deng for characterizing internal injury state.
The IGBT module analysis of fatigue processing method includes step S3, draws and should weaken in one of the embodiments,
Labor curve: carrying out fatigue life test by the material standard part to each component of IGBT module, and the alternation for obtaining component receiving is answered
Become the relationship between the fracture circulating cycle time as strain fatigue curve；That is, step S3 draws the strain of each component of IGBT module
The curve of fatigue.In one of the embodiments, in step S3, by carrying out fatigue life test to IGBT module material, obtain
The different alternate strain and corresponding breaks that component is born carry out data and are fitted to obtain the strain fatigue curve.?
In one embodiment, in step S3, the strain fatigue curve is carried out also according to the processing technology of target operation environment
Correcting process.In one of the embodiments, in step S3, fatigue is carried out by the material standard part to each component of IGBT module
Life test obtains the alternate strain of component receiving and the relationship between the fracture circulating cycle time as strain fatigue curve, goes back root
Processing is modified to the strain fatigue curve according to the processing technology of target operation environment, it is bent to obtain modified strain fatigue
Line.It is tested, is obtained secondary needed for differently strained lower standard component fracture by the strain fatigue of material in one of the embodiments,
The curve of fatigue of material can be obtained in number, fitting data, it is contemplated that under actual motion between each material of IGBT module and standard component
Difference, to test obtain the curve of fatigue carry out certain amendment, obtain revised strain fatigue curve.
Strain fatigue curve is drawn in one of the embodiments, generates strain fatigue curve；An implementation wherein
In example, strain fatigue curve is drawn: fatigue life test being carried out by the material standard part to each component of IGBT module, obtains portion
The alternate strain and the relationship between the fracture circulating cycle time that part is born, the alternate strain born according to component and fracture circulation cycle
Between relationship draw or generate strain fatigue curve.Further, in one of the embodiments, by IGBT module
Each material standard part carries out fatigue life test and generates strain fatigue curve；Strain fatigue is generated in one of the embodiments,
Curve, comprising: tested, obtained secondary needed for differently strained lower material standard part fracture by the strain fatigue of material standard part
The curve of fatigue of material standard part can be obtained in number, fitting data, it is contemplated that each material standard part of IGBT module under actual motion
Between difference, to test obtain the curve of fatigue carry out certain amendment, obtain revised strain fatigue curve, will correct
Treated basis that strain fatigue curve calculates as subsequent step.Wherein, strain fatigue test is by standard component in fatigue
Carried out on machine, be between standard component and component it is distinguishing, component can have one or more standard components i.e. material standard part.
The IGBT module analysis of fatigue processing method includes step S4, calculates IGBT mould in one of the embodiments,
The fatigue damage value of each unit of block: according to the strain fatigue curve, the unit is calculated under the effect of multiple strain levels
It is subjected to the fatigue damage value repeatedly recycled, and determines the accumulating injuring value of the unit according to the fatigue damage value；Wherein
In one embodiment, the fatigue damage value of computing unit, comprising: according to the strain fatigue curve after correcting process, calculate
The unit is subjected to the fatigue damage value repeatedly recycled under the effect of multiple strain levels.Further, an implementation wherein
In example, based on Miner linear cumulative damage law and according to the strain fatigue curve after correcting process, the unit is calculated
Fatigue damage value.Further, it is based on Miner linear cumulative damage law in one of the embodiments, calculates the list
Member is subjected to the fatigue damage value repeatedly recycled under the effect of multiple strain levels.In one of the embodiments, in step S4, root
Life-cycle fatigue is divided into fatigue crack initiation stage and crack Propagation stage according to critical fatigue damage, and using accumulation damage
Separation when wound value is 1 as two stages is with the stage locating for the determination unit.Pass through in one of the embodiments,
Life-cycle fatigue is divided into two stages: fatigue crack initiation stage and crack Propagation stage, base by Cumulative Fatigue Damage value
Pass through electric-thermal-structure using unit accumulated damage D=1 as the separation in two stages in Miner linear cumulative damage law
Coupling calculated result and cycle-index are the accumulating injuring value that can determine each unit.It is described in one of the embodiments,
IGBT module analysis of fatigue processing method is using Miner linear cumulative damage law using unit accumulated damage D=1 as two
The separation in stage is the accumulated damage that can determine each unit according to electric-thermal-structure Coupling calculated result and cycle-index
Value.When unit progressive damage is more than or equal to 1, into during crack propagation, crackle extends through Life-and-death element technology
It characterizes, in conjunction with the variation of physical quantity in multiple physical field computation analysis module life-cycle fatigue process, overcomes the prior art
Defect simulates the variation of physical parameter in IGBT module Fatigue Life, to realize to IGBT module life-cycle fatigue
Accurate simulation analysis.
In practical applications, Miner, Jack John Thomas theory think the fatigue rupture of material be due to cyclic loading it is continuous effect and produce
Caused by life is damaged and is constantly accumulated；It is unrelated with the history of fatigue load that fatigue damage accumulation reaches the net work W absorbed when destruction,
And the fatigue damage degree of material is directly proportional to stress-number of cycles.Based on Miner linear cumulative damage law, can determine
Strain level εiAccumulated damage under effect is as follows: component is being subjected to niThe damage of secondary circulation is Di=ni/Ni.If being strained at k
Horizontal εiUnder effect, it is respectively subjected to niSecondary circulation then can determine that the fatigue damage of each unit is as follows:
When D value is equal to 1, it is believed that evaluation object starts to destroy, be in finite element model most dangerous unit first
Failure.Also that is, whether being greater than 1 according to the impairment value of unit, come whether judging unit fails, the unit of failure is by killing unit
It describes, and the unit of not up to Critical Damage is made a living unit.It can determine that new IGBT module has by Life-and-death element technology
Meta-model is limited, crackle carries out next step extension.
The IGBT module analysis of fatigue processing method includes step S5, determines next time in one of the embodiments,
The finite element model of power cycle: judge whether the unit fails according to the accumulating injuring value, and according to the list not failed
Member continues to determine new IGBT module finite element model, returns and continues to execute step S2 until all units all lose
Effect；In one of the embodiments, in step S4 or step S5, whether failed using unit described in Life-and-death element technical mark.
Described in one of the embodiments, by Life-and-death element technology unit whether failure, kill D be more than or equal to 1 unit,
The unit of kill is coefficient of the rigidity multiplied by a very little, is no longer had an impact to calculated result, and thinks list of the D less than 1
First characteristic is constant, unit of making a living.The finite element model under different crackles so can be obtained.Such design, new limited
It carries out electric-thermal-structure Coupling under meta-model to calculate, the physics of the IGBT module under different crackles can be analyzed by repeating the above steps
Quantitative change law simulates the life-cycle fatigue properties of IGBT module, and then establish module until determining that device thoroughly fails
Status assessment model.So as to simulate IGBT module fatigue crack initiation and crack expansion characteristic, accurate research module is tired
The failure mechanism of labor entire life cycle, so that the changing rule of IGBT module physical quantity in life-cycle fatigue period is analyzed, and according to
This establishes the fatigue rupture state evaluating method of IGBT module, realizes IGBT module safe and stable operation and formulates Strategies of Maintenance,
Ensure equipment safety operation.Equipment for being currently running in one of the embodiments, adjustable working environment parameter with
IGBT module is set to support longer time or more numbers until safety stop；Equipment for that will fail, Ke Yigeng
IGBT module is changed, precautions averts perils.
The IGBT module analysis of fatigue processing method includes step S6, establishes IGBT mould in one of the embodiments,
The status assessment model of block: the distribution knot being calculated according to the failure conditions of each unit and electric-thermal-structure Coupling
Fruit establishes the status assessment model of IGBT module life-cycle fatigue failure.It is obtained newly in step S5 in one of the embodiments,
On the basis of finite element model, restarts electric-thermal-structure Coupling and calculate, obtain the physical parameter under crack propagation, and establish according to this
The status assessment model of IGBT module.In one of the embodiments, in step S6, it is arranged also according to the status assessment model
Or the operation reserve of the adjustment IGBT module.In one of the embodiments, in step S6, the state for establishing IGBT module is commented
Estimate model: the distribution results being calculated according to the failure conditions of each unit and electric-thermal-structure Coupling are established
The IGBT is set or adjusted also according to the status assessment model in the status assessment model of IGBT module life-cycle fatigue failure
The operation reserve of module.In one of the embodiments, in step S6, institute is set or adjusted also according to the status assessment model
State IGBT module.The IGBT module analysis of fatigue processing method is further comprised the steps of: according in one of the embodiments,
Status assessment model replaces the IGBT module.
In one of the embodiments, after step S6, the IGBT module analysis of fatigue processing method further include: according to
The status assessment model of IGBT module, adjusts or replaces the IGBT module.In one of the embodiments, according to IGBT module
Which kind of state running physical parameter and assessment models, assessment IGBT module are in, adjust or replace the IGBT module, wrap
Include the working environment that the IGBT module is adjusted under the premise of safe handling, or the replacement IGBT module.Wherein one
In a embodiment, in advance once, it is secondary, three times, five times, ten times, 20 times, 50 times, 100 times, 200 times, 500 times or
The IGBT module is replaced in 1000 adjustment.Shift to an earlier date one minute, five minutes, ten minutes, 30 in one of the embodiments,
Minute, one hour, two hours, three hours, five hours, 12 hours, twenty four hours, two days, three days, five days, seven days or ten
It etc. adjusts or replaces the IGBT module.It will be in malfunction in one of the embodiments, comprising: at default time
Malfunction is within the scope of number threshold value or preset time threshold.Preset times threshold value includes one in one of the embodiments,
It is secondary, secondary, three times, five times, ten times, 20 times, 50 times, 100 times, 200 times, 500 times or 1,000 inferior；Wherein one
In a embodiment, preset time threshold range includes one minute, five minutes, ten minutes, 30 minutes, one hour, two hours, three
Hour, five hours, 12 hours, twenty four hours, two days, three days, five days, seven days or ten days etc.；Further, according to work
Environment, actual demand, behaviour in service and/or safety guarantee require setting or adjust the preset times threshold value and/or described
Preset time threshold.In this way, can be applied to the life-cycle fatigue properties of the IGBT module under the target operation environmental parameter
Processing, such as IGBT module or its Related product etc. are replaced in advance, effectively ensure the operation of the product using IGBT module
Safety, such as ensure the operational safety of high-speed rail.
Electric-thermal-structure Coupling is carried out under new finite element model in one of the embodiments, to calculate, and is repeated above-mentioned
Step can analyze the physical quantity variation rule of the IGBT module under different crackles.It is understood that an implementation wherein
In example, the IGBT module analysis of fatigue processing method calculates the following steps are included: carrying out electric-thermal-structure Coupling；According to amendment
Strain fatigue curve and cycle-index calculate the fatigue damage value of the unit；According to the fatigue damage value determination unit
Accumulating injuring value；The unit that impairment value is greater than 1 is killed, electric-thermal-structure Coupling calculating and its subsequent step are continued, until
Device thoroughly fails；And so on, until completing the analysis of target complete working environment parameter.Remaining embodiment and so on.
It will be understood to those skilled in the art that apply also for other working conditions similar for the IGBT module analysis of fatigue processing method
Device on, such as MOSFET pipe, thyristor, diode etc., these devices all may be due to the thermal stress by alternation is influenced
There is fatigue rupture and analyzes the changing rule of its physical quantity, as space is limited herein to can study its Under Thermal Fatigue Damage mechanism
It conforms to the principle of simplicity.
A kind of IGBT module life-cycle fatigue analysis method in one of the embodiments, comprising the following steps:
Step 1) establishes the finite element model of IGBT module: the geometry mould of module is established according to the actual parameter of IGBT module
Then type carries out mesh generation, model should encrypt subdivision, especially in the position that crackle occurs, is so carrying out step 5)
When, it just can guarantee that crackle span is unlikely to excessive, improve the accuracy of simulation；
Step 2) electric-thermal-structure Coupling calculates: applying load, the heat generated by electric-thermal-structure Coupling computing module
Stress/strain distribution；
Step 3) draws revised strain fatigue curve (ε-N curve): by material to each component of IGBT module or
Its standard component carries out fatigue life test, obtains the alternate strain and the relationship between the fracture circulating cycle time that each component is born, i.e.,
Basic ε-N curve considers the process that actual processing is done, is modified, is repaired to basic ε-N curve on this basis
ε-N curve after just；
The fatigue damage value of step 4) calculating each unit: it according to revised ε-N curve, is damaged based on Miner linear accumulation
Wound is theoretical, can determine strain level εiAccumulated damage under effect is as follows: IGBT module or other semiconductor components are being subjected to ni
The damage of secondary circulation is Di=ni/Ni.If in k strain level εiUnder effect, it is respectively subjected to niSecondary circulation, then can determine each unit
Fatigue damage it is as follows:
If n=0, D=0, component does not occur fatigue damage, and unit physical characteristic will not change, if n=N, D
=1, local unit failure, into the crack propagation phase.Using unit accumulated damage D=1 as the separation in two stages, pass through
Electric-thermal-structure Coupling calculated result and cycle-index are the accumulating injuring value that can determine each unit；
Step 5) determines the finite element model of power cycle next time: according to the method for step 4), whether carrying out judging unit
Failure, the unit of D > 1 are killed for disabling unit, and the unit of kill is coefficient of the rigidity multiplied by a very little, are tied to calculating
Fruit no longer has an impact, it is believed that the unit of D < 1 is not up to Critical Damage and makes a living unit, and element characteristics is constant.Can so it pass through
Life-and-death element technology determines the new finite element model under different circulations, is so the different crackle of analog；
Step 6) is restarted electric-thermal-structure Coupling and is calculated: electric-thermal-structure Coupling carried out under new finite element model to be calculated,
Repeat step 4-5) the physical quantity variation rule of IGBT module under different crackles can be analyzed, and then establish commenting for IGBT module
Estimate model, to simulate the life-cycle fatigue properties of IGBT module, formulates operation reserve.
Such design is proposed the extension for being characterized IGBT module fatigue crack with Life-and-death element technology, it is tired to establish module
Labor crack propagation model simplifies traditional crack propagation modeling method；And propose that electric-thermal-structure Coupling calculates analysis IGBT
Thus the changing rule of module crack Propagation stage physical parameter can establish the Fatigue Damage States model of module, optimization
Traditional assessment technology.
Below by taking GD50HFL120C1S module common in the market as an example, the IGBT module fatigue is further explained
Analysis and processing method.In the internal structure of GD50HFL120C1S, No. 1 terminal is the collector of pipe 1, and No. 2 terminals are the hair of pipe 1
Emitter-base bandgap grading, while the collector for pipe 2 of also ining succession, 7 be the emitter voltage exit of pipe 1, and 6 be the grid of pipe 1；No. 3 terminals are pipe 2
Emitter, 5 be the emitter voltage exit of pipe 2, and 4 be the grid of pipe 2, and the end electrical characteristic of module can pass through these ends
It mouthful measures.In view of the module is double pipe structure, therefore one of igbt chip is selected to be analyzed.Due to encapsulating material and fill out
The silica gel thermal coefficient filled is smaller, and heat mainly passes downwardly through what copper base shed, for simplifying the analysis, therefore ignores above
Silica gel and encapsulation, it is believed that adiabatic condition is in above module.The IGBT module analysis of fatigue processing method key step is such as
Under.
(1) finite element model of IGBT module is established: as shown in figure 3, establishing according to GD50HFL120C1S mock-up imitative
True mode, the available finite element model of subdivision grid are provided with limited grid, list of the grid as subsequent calculating
Member；
(2) electric-thermal-structure Coupling calculates: applying power cycle load, temperature is calculated by electric-thermal-structure Coupling
The distribution of degree, potential and stress.In conjunction with the yield strength of each material, it can determine that bonding wire has been plastically deformed, and
Thermal stress is respectively less than its yield strength on other layers of material, elastic deformation only occurs, therefore its fatigue life is with respect to bonding wire
It is longer, fatigue rupture most easily occurs on bonding face and then bonding wire is caused to fall off.The Temperature Distribution of IGBT module is as schemed when 16s
Shown in 4, the Potential Distributing of IGBT module is as shown in figure 5, the thermal stress distribution of IGBT is as shown in fig. 6,16s is bonded when 16s when 16s
The equivalent ductility deformation of lead is as shown in fig. 7, the particular state and so on of remaining time；
(3) draw revised strain fatigue curve (ε-N curve): fatigue test is controlled using strain amplitude, carries out tension and compression
Symmetrical fatigue, stress ratio R=-1, frequency 50Hz establish the relationship between its corresponding fracture circulation cycle N of strain amplitude ε
Curve.On this basis, consider the process that actual processing is done, basic ε-N curve is modified, revised ε-is obtained
N curve；
(4) fatigue damage value of computing unit: according to revised ε-N curve and electric-thermal-structure Coupling calculated result with
And power cycle number can determine the degree of injury of each unit, obtain the impairment value of different cycle-index lower units；
(5) finite element model of power cycle next time: comparison Critical Damage intensity is determined, it can by Life-and-death element technology
To establish the crack Propagation model of different cycle-index lower modules, wherein aluminium substrate failure feelings after power cycle 10000 times
Condition is as shown in figure 8, aluminium substrate failure conditions are as shown in figure 9, aluminium substrate after power cycle 13200 times after power cycle 12500 times
Failure conditions are as shown in Figure 10, and aluminium substrate failure conditions are as shown in figure 11 after power cycle 13700 times.Indicate that oval circle indicates it
Inside there is crackle.
(6) restart electric-thermal-structure Coupling to calculate: generating new finite element model according to crack Propagation model, herein
On the basis of carry out electric-thermal-structure Coupling and calculate, physical quantity of the available module during crack propagation, and draw out parameter
Change curve.Wherein, potential change curve is as shown in figure 12 under different cycle-indexes, and different cycle-index lower casing temperature variations are bent
Line is as shown in figure 13, then, can be using the mutated site of pressure drop as the mark of assessment according to curve shown in Figure 12 and Figure 13
Standard, i.e. pressure drop increase about 3.75%, while determining the mutated site of shell temperature, are 77.523 DEG C, increase about 3.71%.Then basis
Above-mentioned evaluation criteria formulates operation reserve, that is, can guarantee its reliability, and the utilization rate of maximizing device.
A kind of semiconductor devices processing method in one of the embodiments, uses described in any of the above-described embodiment
IGBT module analysis of fatigue processing method is realized, the operation reserve of semiconductor devices is arranged according to the status assessment model, and
The semiconductor devices includes IGBT, MOSFET pipe, thyristor and/or diode component.It is a kind of in one of the embodiments,
Semiconductor devices replacing options use IGBT module analysis of fatigue processing method described in any embodiment to realize, and semiconductor
Device includes IGBT, MOSFET pipe, thyristor and/or diode component.In one of the embodiments, using IGBT,
MOSFET pipe, thyristor and/or diode component are used as or replace IGBT module analysis of fatigue processing side described in any embodiment
IGBT module in method.In one of the embodiments, according to the accumulation of any unit of semiconductor devices or all units
Impairment value judges that semiconductor devices then will adjust or replace the semiconductor devices in malfunction.Adjustment or replacement institute
Semiconductor devices is stated, the working environment parameter including adjusting the semiconductor devices under the premise of safe handling, or replacement
The semiconductor devices.It is primary in advance, secondary in one of the embodiments, three times, five times, ten times, 20 times, 50 times,
The semiconductor devices is replaced in 100 times, 200 times, 500 times or 1,000 times adjustment.Shift to an earlier date in one of the embodiments,
One minute, five minutes, ten minutes, 30 minutes, one hour, two hours, three hours, five hours, 12 hours, it is 24 small
When, two days, three days, five days, the adjustment such as seven days or ten days or replace the semiconductor devices.Such design, can be accurately
Obtain semiconductor devices fatigue failure mechanism, physics during crack Propagation can not be simulated by solving conventional numeric analysis method
The drawbacks of characteristic, and overcome the problems, such as that test method(s) cost is big, be difficult to further investigate module life-cycle fatigue properties, and comprehensively
The crack initiation phase and crack propagation phase for considering semiconductor devices fatigue failure realize to semiconductor devices life-cycle fatigue
Accurate simulation analysis, to before the failure occurs, be overhauled in advance, adjust operating condition or replacement component.
It should be noted that the other embodiments of the application further include, the mutually group of the technical characteristic in the various embodiments described above
Close be formed by, the IGBT module analysis of fatigue processing method that can implement and semiconductor devices replacing options.
Each technical characteristic of embodiment described above can be combined arbitrarily, for simplicity of description, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, all should be considered as described in this specification.
The several embodiments of the application above described embodiment only expresses, the description thereof is more specific and detailed, but simultaneously
The limitation to claim therefore cannot be interpreted as.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the concept of this application, various modifications and improvements can be made, these belong to the protection of the application
Range.Therefore, the scope of patent protection of the application should be determined by the appended claims.
Claims (10)
1. a kind of IGBT module analysis of fatigue processing method, which comprises the following steps:
Step S1, it establishes the finite element model of IGBT module: establishing the geometry of IGBT module according to the actual size of IGBT module
Model obtains the finite element model of IGBT module by carrying out mesh generation to the geometrical model；
Step S2, electric-thermal-structure Coupling calculates: calculating power by electric-thermal-structure Coupling according to the finite element model and follows
The thermal stress and Strain Distribution that IGBT module generates under ring, and record distribution results；
Step S3, it draws strain fatigue curve: fatigue life test is carried out by the material standard part to each component of IGBT module,
The alternate strain of each component receiving and the relationship between the fracture circulating cycle time are obtained as strain fatigue curve；
Step S4, it calculates the fatigue damage value of each unit of IGBT module: according to the strain fatigue curve, calculating the unit
It is subjected to the fatigue damage value repeatedly recycled under the effect of multiple strain levels, and the unit is determined according to the fatigue damage value
Accumulating injuring value；
Step S5, it determines the finite element model of power cycle next time: whether the unit is judged according to the accumulating injuring value
Failure, and continue to determine new IGBT module finite element model according to the unit not failed, return continue to execute step S2 until
All units all fail；
Step S6, the status assessment model of IGBT module is established: according to the failure conditions of each unit and electric-thermal-structure coupling
The distribution results being calculated are closed, the status assessment model of IGBT module life-cycle fatigue failure is established.
2. IGBT module analysis of fatigue processing method according to claim 1, which is characterized in that in step S1, to described several
When what model carries out mesh generation, refined net subdivision is carried out to the geometrical model in the position that crackle is likely to occur.
3. IGBT module analysis of fatigue processing method according to claim 2, which is characterized in that according to historical data to described
Geometrical model carries out mesh generation so that a possible crackle is located in a grid.
4. IGBT module analysis of fatigue processing method according to claim 1, which is characterized in that in step S2, apply power
Cyclic loading calculates the thermal stress and Strain Distribution that IGBT module generates under power cycle by electric-thermal-structure Coupling.
5. IGBT module analysis of fatigue processing method according to claim 1, which is characterized in that in step S3, by right
IGBT module material carries out fatigue life test, obtains the different alternate strain and corresponding breaks of component receiving, into
Row data are fitted to obtain the strain fatigue curve.
6. IGBT module analysis of fatigue processing method according to claim 1, which is characterized in that in step S3, also according to mesh
The processing technology of mark working environment is modified processing to the strain fatigue curve.
7. IGBT module analysis of fatigue processing method according to claim 1, which is characterized in that in step S4, according to critical
Life-cycle fatigue is divided into fatigue crack initiation stage and crack Propagation stage by fatigue damage, and use accumulating injuring value for
As the separation in two stages with the stage locating for the determination unit when 1.
8. IGBT module analysis of fatigue processing method according to claim 1, which is characterized in that in step S5, using life and death
Monotechnics marks whether the unit fails.
9. IGBT module analysis of fatigue processing method according to claim 1, which is characterized in that in step S6, also according to institute
State the operation reserve that the IGBT module is set or adjusted in status assessment model.
10. a kind of semiconductor devices processing method, which is characterized in that using as described in described any one of claims 1 to 9
IGBT module analysis of fatigue processing method is realized, the operation reserve of semiconductor devices is arranged according to the status assessment model, and
The semiconductor devices includes IGBT, MOSFET pipe, thyristor and/or diode component.
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