CN105550397A - IGBT module state evaluation method based on damage voltage - Google Patents
IGBT module state evaluation method based on damage voltage Download PDFInfo
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Abstract
The invention provides an IGBT module state evaluation method based on a damage voltage. The IGBT module state evaluation method comprises the following steps: executing electrothermal coupling calculation; calculating a structural field; drawing a corrected S-N curve; correcting an IGBT module model according to the corrected S-N curve, calculation results of electrothermal- structural field and a power cycle index; and executing electrothermal coupling analysis on the corrected model, calculating the damage voltages of the IGBT module under different damage degrees to obtain a damage voltage curve of the IGBT module, namely a state evaluation model of the IGBT module. According to the IGBT module state evaluation method based on the damage voltage provided by the invention, the effect of multiple working conditions on the fatigue failure of a power device is not considered, the S-N curve is corrected and is used for evaluating the damage state of the IGBT module, the defects in the prior art are overcome, and the accurate evaluation of the damage state is realized.
Description
Technical field
The present invention relates to IGBT module state estimation and device reliability field, especially a kind of IGBT module state evaluating method based on damage voltage.
Background technology
Insulated gate bipolar transistor (InsulatedGateBipolarTransistor, be called for short IGBT) advantage such as, control circuit simple, current carrying density large, switching speed fast, saturation pressure reduction high with its input impedance, become the representative device in modern power electronic field, in recent years, the widespread use of insulated gate bipolar transistor, has brought brand-new epoch into by Power Electronic Technique.Along with the application of power semiconductor new construction and new technology, current carrying density and the voltage levvl of IGBT power model constantly improve, loss also raises rapidly thereupon, volume but reduces relatively, so can produce huge thermal force when running, nowadays heat problem has been IGBT module failure of removal major influence factors.
The difficult point of IGBT module remaining life assessment is how draw out stress loading spectrum (the time dependent relation of stress) of IGBT module according to its practical operation situation and carry out damage state assessment in conjunction with fatigue strength theory to IGBT module.Traditionally based on simplified model analytical method and only consider that the research method of parts static strengths assessment cannot provide more accurate quantitative test and design criteria, research method in the past and defect as follows:
(1), according to the state evaluating method that practical operating experiences and test propose:
These class methods mainly utilize the residual life of accelerated fatigue test to IGBT module to be studied, and draw the collection emitter voltage of IGBT module under power cycle effect by test.Think that integrating emitter voltage is greater than 20% of initial value as end of life, this analytical approach is obtained by test, can be made predicting more accurately by the state of collection emitter voltage to a certain concrete analysis object.But test method(s) can only carry out for specific object, not there is universality, required time is larger with cost, usually the life-span under the single operating condition of IGBT module can only also be considered, and do not get rid of the impact on collection emitter voltage of electric current and temperature, so when variations injunction temperature, IGBT module that load variations is large, be difficult to make correct assessment to its faulted condition.
(2), according to the analytical method analysis of statistical theory fatigue lifetime:
These class methods are called as analytical method, think that the life-span of power device depends on temperature parameter, as range of temperature, duration, frequency, mean value etc.For analytic model, the subject matter of existence is difficult to accurately Extracting temperature cycle index from temperature-time histories.Usual employing statistical counting method comes Extracting temperature amplitude cycle index and average cycle index, then applies injury tolerance and life-span that associated injury accumulation theory calculates off-line power device.Then according to the state assessing IGBT module serviceable life, but this method can only be carried out for specific object, not there is universality, required time is larger with cost, usually the single operating mode of IGBT module can only also be considered, for the IGBT device under the complex working condition with the change of extraneous radiating condition, load variations, be difficult to make its remaining life predict accurately.
(3), based on the Prediction method for fatigue life of multiple physical field coupling analysis:
The people such as Tuan-YuHung utilize coupled field computation to analyze the IGBT module under power partial circulating.Consider IGBT module bearing for a long time in alternation thermal and mechanical stress situation, IGBT module is assessed fatigue lifetime.But to the acquisition of S-N curve, in conjunction with the process condition of IGBT module reality, just think that tired formation starts to be end of life, there is very large waste in this utilization for device, and prevent numerical simulation and the impossible matching completely of IGBT module practical operation situation, so the state estimation of IGBT module and the demand of life prediction cannot be met.
Summary of the invention
Technical matters to be solved by this invention is to provide a kind of IGBT module state evaluating method based on damage voltage, power device has not been considered multi-state is to fatigue failure effect; And S-N curve revised and for IGBT module damage state assessment, overcomes the defect of prior art, achieve the accurate evaluation to faulted condition.
The technical solution adopted in the present invention is:
Based on an IGBT module state evaluating method for damage voltage, comprise the following steps:
Step 1), electro thermal coupling calculate: by electro thermal coupling field calculate structure field calculate needed for driving source input, i.e. temperature rise;
Step 2), structure field calculates: considering step 1) temperature rise that calculates, the thermal expansivity of each several part is set, the thermal stress/Strain Distribution produced under trying to achieve temperature rise effect;
Step 3), draw revised S-N curve: by carrying out fatigue life test to IGBT module material, obtain the relation between alterante stress/strain that parts bear and fracture circulating cycle time, i.e. basic S-N curve, on this basis, consider the PROCESS FOR TREATMENT that actual processing is done, basic S-N curve is revised, obtains revised S-N curve;
Step 4), by the result of calculation of revised S-N curve and electricity-Re-structure field, and power cycle number of times is revised IGBT module model;
Step 5), electro thermal coupling analysis is carried out to revised model, calculate the damage voltage of the IGBT module under Injured level, thus obtain the damage voltage curve of IGBT module, i.e. the state estimation model of IGBT module.
Step 1) computing method be:
1-1), the model being applicable to analyzing-Re-structure-the analysis of fatigue of IGBT module electricity is set up;
1-2), mesh generation is carried out to model;
1-3), electro thermal coupling solves, obtain structure field calculate needed for driving source input, i.e. temperature rise.
Step 3) in, according to IGBT module PROCESS FOR TREATMENT situation, draw the factor of influence affecting solder layer and bonding wire, in conjunction with factor of influence, basic S-N curve is revised, obtain revised S-N curve.
, there is alterante stress in being on active service for IGBT module and concentrate the phenomenon that fatigue damage easily occurs, propose the damage state assessment method of complete set in a kind of IGBT module state evaluating method based on damage voltage of the present invention.Multiple physical field coupling analysis finite element numerical analysis can obtain IGBT module various places inside that on-line monitoring is difficult to obtain in the situation such as temperature and ess-strain not in the same time, under different operating mode.On this basis, in conjunction with the fatigue properties of bonding wire and solder, IGBT model is revised, calculates the damage voltage of the IGBT module under different faulted condition, its Under Thermal Fatigue Damage mechanism can be illustrated, realize IGBT module safe and stable operation and formulate Strategies of Maintenance.Power device state evaluating method is long-standing, but not yet occurs getting rid of the impact of electric current and temperature at power device and to revise S-N curve and for damage model correction; This method is also applicable on the similar device of other working condition, such as MOSFET pipe, thyristor, diode etc., and these devices all may occur fatigure failure because being subject to the thermal stress impact of alternation, thus obtain damage voltage in various degree.
Accompanying drawing explanation
Below in conjunction with drawings and Examples, the invention will be further described:
Fig. 1 is IGBT module S-N Curve schematic diagram of the present invention.
Fig. 2 is the Temperature Distribution cloud atlas of the model lossless of embodiment of the present invention when hindering.
Fig. 3 is the Potential Distributing cloud atlas of the model lossless of embodiment of the present invention when hindering.
Fig. 4 is the collection emitter-base bandgap grading of the model lossless of embodiment of the present invention when hindering under different current temperature.
Fig. 5 is the bonding wire stress distribution cloud atlas of the embodiment of the present invention.
Fig. 6 is the solder layer stress distribution cloud atlas of the embodiment of the present invention.
Fig. 7 is the model of embodiment of the present invention Temperature Distribution cloud atlas when having a damage.
Fig. 8 is the model of embodiment of the present invention Potential Distributing cloud atlas when having a damage.
Fig. 9 is the damage voltage change curve of the embodiment of the present invention.
Embodiment
Based on an IGBT module state evaluating method for damage voltage, comprise the following steps:
Step 1), electro thermal coupling calculate: by electro thermal coupling field calculate structure field calculate needed for driving source input, i.e. temperature rise;
Step 2), structure field calculates: considering step 1) temperature rise that calculates, the thermal expansivity of each several part is set, the thermal stress/Strain Distribution produced under trying to achieve temperature rise effect;
Step 3), draw revised S-N curve: by carrying out fatigue life test to IGBT module material, obtain the relation between alterante stress/strain that parts bear and fracture circulating cycle time, i.e. basic S-N curve, on this basis, consider the PROCESS FOR TREATMENT that actual processing is done, basic S-N curve is revised, obtains revised S-N curve;
Step 4), by the result of calculation of revised S-N curve and electricity-Re-structure field, and power cycle number of times is revised IGBT module model;
Step 5), electro thermal coupling analysis is carried out to revised model, calculate the damage voltage of the IGBT module under Injured level, thus obtain the damage voltage curve of IGBT module, i.e. the state estimation model of IGBT module.
Step 1) computing method be:
1-1), the model being applicable to analyzing-Re-structure-the analysis of fatigue of IGBT module electricity is set up;
1-2), mesh generation is carried out to model;
1-3), electro thermal coupling solves, obtain structure field calculate needed for driving source input, i.e. temperature rise.
Step 3) in, according to IGBT module PROCESS FOR TREATMENT situation, draw the factor of influence affecting solder layer and bonding wire, in conjunction with factor of influence, basic S-N curve is revised, obtain revised S-N curve.
The main contents of each step of the present invention are as follows:
1, IGBT module transient state electro thermal coupling calculates:
By carrying out the calculating of electro thermal coupling field to IGBT module.By spatially discrete for the IGBT module model set up, simultaneously in time by discrete for IGBT module running status, at each moment solving finite element equation simultaneously, consider temperature to change in time and the other materials Parameters variation spatially caused, calculate IGBT module electromotive force at a time and Temperature Distribution in conjunction with electro thermal coupling equation.Calculated by electro thermal coupling, can calculate the temperature rise situation that IGBT module is inscribed at each time exactly, the structure field for next step calculates and provides driving source to input.
2, consider that temperature calculates the structure field that material mechanical performance affects:
IGBT module operationally, the major failure caused by heat problem is that bonding wire comes off and solder layer cavity, this bi-material mechanical property keeps temperature (25 DEG C-175 DEG C) impact comparatively greatly, so need consider that temperature is for IGBT module bonding wire (aluminium) and solder layer (SnAgCu) variation with temperature characteristic.Afterwards based on transient structural analysis, study the stress/strain not descending thermal expansion to produce in the same time.The accurate calculating of structure field is the basis of correctly drawing IGBT module loading spectrum.
3, the IGBT module damage voltage based on multiple physical field coupling analysis calculates:
Fatigue analysis is the science be based upon in experimental basis, only has load that is virtually reality like reality and Service Environment, carries out actual loading test to research parts, correctly could be familiar with the Expected Results of their fatigue properties, checking fatigue design.The fatigue properties of material represent with stress/strain-Life Relation (S-N curve) usually, describe maximum stress σ
maxor stress amplitude σ
αrelation curve between its corresponding fracture circulation cycle N, as shown in Figure 1.After obtaining S-N curve, want the PROCESS FOR TREATMENT situation of bond material toward contact, as the factors such as surfaceness, coating, shot-blast process, initial notch are revised basic S-N curve.After obtaining the loading spectrum of IGBT module, in conjunction with the fatigue properties of bonding wire and solder, fatigue analysis theory just can be utilized to revise the model of IGBT module.Thus again utilize the damage voltage of electro thermal coupling analytical calculation correction model (model after damage).
Embodiment:
With common IGBT module a certain on market for research object, rated current is 300A, and rated voltage is 1200V.This modular structure is made up of four equal modules, upper and lower two wired in parallel run, left and right block coupled in series, therefore, when setting up IGBT model, carry out simulation calculation to its 1/4th model, IGBT is as package module, because the silica gel coefficient of heat conductivity of encapsulating material and filling is less, its heat mainly passes downwardly through that copper base sheds.Therefore the silica gel ignored above and encapsulation, think and be in adiabatic condition above module.The invention provides a kind of IGBT module state evaluating method based on damage voltage, the method key step is as follows:
1), electricity-thermal coupling calculates: calculate the driving source input needed for the calculating of structure field by electricity-thermal coupling.Obtain temperature and Potential Distributing cloud atlas respectively as shown in Figure 2 and Figure 3 by FEM (finite element) calculation, obtain structure field calculate needed for driving source input, i.e. temperature rise.Change electric current and temperature, calculate collection emitter voltage at different electric current and temperature as shown in Figure 4.
Correctly solving of electricity-thermal coupling is the important guarantee of structure field accurate analysis, the temperature rise solved is loaded in structure field by the mode mapped to be carried out stress/strain and solves, the grid of electricity-thermal coupling field and structure field can need according to respective solving and do different demarcation, improves the resource utilization of computing machine.
2), structure field calculate: when consider step 1) calculate temperature rise, produce under trying to achieve each material heat expansion effect stress/strain distribution; Obtain the stress distribution cloud atlas of bonding wire and upper solder layer respectively as shown in Figure 5, Figure 6.
3), revised S-N curve is drawn: by carrying out the relation that fatigue life test obtains between alterante stress/strain that parts bear and fracture circulating cycle time to IGBT module material, i.e. basic S-N curve, on this basis, consider the PROCESS FOR TREATMENT that actual processing is done, basic S-N curve is revised, obtains revised S-N curve;
4), by the result of calculation of revised S-N curve and electricity-Re-structure field and power cycle number of times, IGBT module model is revised;
5), electro thermal coupling analysis is carried out to revised model, its Temperature Distribution and Potential Distributing are as shown in Figure 7 and Figure 8, calculate damage voltage and the temperature of the IGBT module under Injured level, thus obtain the damage voltage curve of IGBT module, the i.e. state estimation model of IGBT module, as shown in Figure 9.
According to collection emitter voltage and the junction temperature of the IGBT module of actual motion, the collection emitter voltage of reality is deducted the magnitude of voltage in Fig. 4 under corresponding temperature electric current, namely actual damage voltage, comparison diagram 9, can understand the faulted condition of IGBT.
Such as, IGBT module in Fig. 6,7, when there is damage in its enclosed inside, integrating emitter voltage as 2.806V and junction temperature is 105.99 DEG C, there is corresponding rising, emitter voltage is integrated as 2.735V according to the IGBT module at junction temperature in Fig. 4 105.99 DEG C, the damage voltage that can calculate IGBT module is thus 0.069V, contrast Fig. 9, damage voltage (its threshold is 0.06V) curve under 300A electric current is known, this IGBT module is in accelerates damage period, therefore, need the running environment improving IGBT module, or change device.
Claims (3)
1., based on an IGBT module state evaluating method for damage voltage, it is characterized in that comprising the following steps:
Step 1), electro thermal coupling calculate: by electro thermal coupling field calculate structure field calculate needed for driving source input, i.e. temperature rise;
Step 2), structure field calculates: considering step 1) temperature rise that calculates, the thermal expansivity of each several part is set, the thermal stress/Strain Distribution produced under trying to achieve temperature rise effect;
Step 3), draw revised S-N curve: by carrying out fatigue life test to IGBT module material, obtain the relation between alterante stress/strain that parts bear and fracture circulating cycle time, i.e. basic S-N curve, on this basis, consider the PROCESS FOR TREATMENT that actual processing is done, basic S-N curve is revised, obtains revised S-N curve;
Step 4), by the result of calculation of revised S-N curve and electricity-Re-structure field, and power cycle number of times is revised IGBT module model;
Step 5), electro thermal coupling analysis is carried out to revised model, calculate the damage voltage of the IGBT module under Injured level, thus obtain the damage voltage curve of IGBT module, i.e. the state estimation model of IGBT module.
2. a kind of IGBT module state evaluating method based on damage voltage according to claim 1, is characterized in that, step 1) computing method be:
1-1), the model being applicable to analyzing-Re-structure-the analysis of fatigue of IGBT module electricity is set up;
1-2), mesh generation is carried out to model;
1-3), electro thermal coupling solves, obtain structure field calculate needed for driving source input, i.e. temperature rise.
3. a kind of IGBT module state evaluating method based on damage voltage according to claim 1, it is characterized in that, step 3) in, according to IGBT module PROCESS FOR TREATMENT situation, draw the factor of influence affecting solder layer and bonding wire, in conjunction with factor of influence, basic S-N curve is revised, obtain revised S-N curve.
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Cited By (6)
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| CN106528987A (en) * | 2016-11-03 | 2017-03-22 | 河北工业大学 | Method for accumulated damage computation and life prediction of IGBT module used for electric car |
| CN109094489A (en) * | 2017-06-21 | 2018-12-28 | 罗伯特·博世有限公司 | Method for running onboard power system |
| CN109840357A (en) * | 2019-01-08 | 2019-06-04 | 广州供电局有限公司 | Transistor modular fatigue life determines method, apparatus and computer equipment |
| CN109885884A (en) * | 2019-01-21 | 2019-06-14 | 广州供电局有限公司 | IGBT module analysis of fatigue processing method and semiconductor devices processing method |
| CN110245414A (en) * | 2019-06-11 | 2019-09-17 | 南方电网科学研究院有限责任公司 | A kind of compression joint type IGBT module multiple physical field coupling simulation method |
| CN110851947A (en) * | 2018-08-21 | 2020-02-28 | 通用电气航空系统有限责任公司 | Method and system for predicting semiconductor fatigue |
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| CN109840357A (en) * | 2019-01-08 | 2019-06-04 | 广州供电局有限公司 | Transistor modular fatigue life determines method, apparatus and computer equipment |
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| CN109885884A (en) * | 2019-01-21 | 2019-06-14 | 广州供电局有限公司 | IGBT module analysis of fatigue processing method and semiconductor devices processing method |
| CN110245414A (en) * | 2019-06-11 | 2019-09-17 | 南方电网科学研究院有限责任公司 | A kind of compression joint type IGBT module multiple physical field coupling simulation method |
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