CN106124957A - The on-line monitoring method that a kind of insulated gate bipolar transistor is degenerated - Google Patents
The on-line monitoring method that a kind of insulated gate bipolar transistor is degenerated Download PDFInfo
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Abstract
The invention discloses the on-line monitoring method that a kind of insulated gate bipolar transistor is degenerated, can be applicable to monitor IGBT degree of degeneration in practical work process, thus carry out early warning before it lost efficacy.This on-line monitoring method includes: under IGBT not degenerate case, IGBT to be measured is carried out temperature experiment, record the constant pressure drop of junction temperature index characterizing IGBT junction temperature level under IGBT difference junction temperature to be measured and the degeneration index conducting resistance characterizing IGBT degree of degeneration, calculate degeneration index variable quantity and the proportionality coefficient of junction temperature index variable quantity under identical variations injunction temperature；Under IGBT degenerate case, record junction temperature index and degeneration index online, in conjunction with the proportionality coefficient drawn by temperature experiment under normal circumstances, degeneration index is gone the optimization that junction temperature affects, monitor the degree of degeneration of IGBT to be measured according to the degeneration index after optimizing.
Description
Technical field
The invention belongs to reliability engineering technique field, relate to the on-line monitoring that a kind of insulated gate bipolar transistor is degenerated
Method.
Background technology
Insulated gate bipolar transistor (Insulated Gate Bipolar Transistor is called for short IGBT), is by gold
Genus-oxide semiconductor field effect transistor (Metal-Oxide-Semiconductor Field-Effect
Transistor, is called for short MOSFET) and bipolar junction transistor (Bipolar Junction Transistor is called for short BJT) is again
The voltage-controlled device for power switching of full-control type closed, has Control of Voltage concurrently, input impedance is high, switching speed is fast, conducting resistance
The advantage that little, current capacity is big, is therefore widely used in converter constant power current transformer, is the main body realizing power conversion.
IGBT in actual applications, is in conducting off state repeatedly, thus IGBT junction temperature the most alternately and repeatedly raises
Reducing, this running is referred to as the power cycle procedure of IGBT.Owing to the heat of each composition material of composition IGBT encapsulating structure is swollen
The difference of swollen coefficient (Coefficient of Thermal Expansion is called for short CTE), causes in power cycle procedure
Contact surface between each composition material of IGBT subjects the mechanical stress of repetition because of repeatedly changing of temperature, thus constantly moves back
Change, cause aluminum metal layer reconstruct and bonding line fracture failure.
At present, in the method for existing monitoring of degenerating IGBT, its degeneration index has or can not record online, or by negative
Load curent change affects, or many restriction such as is affected by variations injunction temperature.Degeneration index in this on-line monitoring method can root
The electric parameters arrived according to on-line monitoring, is obtained by certain computational methods, and is not changed by collector current and affected；At warp
After the optimization of past junction temperature, do not affected by variations injunction temperature.This on-line monitoring method can characterize the degree of degeneration within IGBT
And do not affected by other factors, early warning can be carried out before IGBT lost efficacy, prevent the safety brought because of the catastrophic failure of IGBT
Problem and economic loss.
Summary of the invention
Based on the problems referred to above, it is an object of the invention to provide the on-line monitoring that a kind of insulated gate bipolar transistor is degenerated
Method, is used for the degree of degeneration exactly within on-line monitoring IGBT, and is not affected by collector current and variations injunction temperature.Should
On-line monitoring method includes: under IGBT not degenerate case, IGBT to be measured is carried out temperature experiment, records IGBT difference junction temperature to be measured
The degeneration index conducting of the constant pressure drop of junction temperature index of lower sign IGBT junction temperature level and sign IGBT degree of degeneration
Resistance, calculates degeneration index variable quantity and the proportionality coefficient of junction temperature index variable quantity under identical variations injunction temperature；IGBT degenerate case
Under, record junction temperature index and degeneration index online, in conjunction with the proportionality coefficient drawn by temperature experiment under normal circumstances, degeneration is referred to
Mark carries out the optimization of junction temperature impact, monitors the degree of degeneration of IGBT to be measured according to the degeneration index after optimizing.
Concrete technical scheme of the present invention is as follows:
The on-line monitoring method that insulated gate bipolar transistor is degenerated, comprises the following steps:
1) Control release condition makes IGBT to be measured bear the rush of current of the repetition that will not cause significant degradation, and junction temperature can
Approximating equal with shell temperature, carry out temperature experiment, to obtain under identical variations injunction temperature, degeneration index variable quantity becomes with junction temperature index
The proportionality coefficient of change amount.This step specifically includes following sub-step:
1.1) the shell temperature of IGBT to be measured is made to be constant at target temperature by thermostat.Initial target temperature can be according to reality
The needs of border experiment are determined.
1.2) collector emitter voltage and the collector current waveform of IGBT to be measured are gathered.Colelctor electrode in the present invention-send out
Emitter voltage refers to the voltage between colelctor electrode and emitter stage.
1.3) extract collector emitter voltage when IGBT turns on and collector current, and calculate under this junction temperature
Junction temperature index when IGBT to be measured does not degenerates and degeneration index.
1.4) change shell temperature, make the constant shell temperature value after the change of IGBT shell temperature by thermostat, repeat 1.2)～
1.3) the junction temperature index when IGBT to be measured under current junction temperature does not degenerates and degeneration index, are obtained.
1.5) 1.4 are repeated) enough times, obtain the junction temperature index under abundant group of difference junction temperature and degeneration index.
1.6) according to the junction temperature index to be measured under the different junction temperature of many groups and degeneration index, identical variations injunction temperature is calculated
Under, degeneration index variable quantity and the proportionality coefficient of junction temperature index variable quantity.
2) IGBT to be measured is in practical work process, can bear the bigger rush of current of repetition and be in power cycle
Degenerative process in, this process is carried out on-line monitoring, to obtain the degree of degeneration of object time IGBT.This step specifically includes
Following sub-step:
2.1) current collection of IGBT to be measured after some groups of on-line monitorings start and when significant degradation do not occurs IGBT is gathered
Pole-emitter voltage and collector current waveform.Herein, impact should be the least, makes IGBT substantially keep the normal shape do not degenerated
State, gatherer process need to be carried out, at utmost to reduce degeneration probability after starting monitoring as early as possible.Choice set electrode-transmitter pole
The junction temperature in the moment of voltage and collector current value all normal (being i.e. not apparent from degenerating) is as standard junction temperature, and from standard junction temperature institute
Collector emitter voltage and collector current when this group extracting data at place turns on calculate junction temperature index and degeneration
Index, as standard junction temperature index and standard degeneration index.
2.2) when needing the degree of degeneration monitoring the object time of IGBT to be measured, gather the IGBT's to be measured of object time
Collector emitter voltage and collector current, extract turning part, calculates the junction temperature index of the IGBT to be measured of object time
With degeneration index；
2.3) according to step 1.6) in the proportionality coefficient that obtains, the junction temperature index of object time, the degeneration of object time refer to
Mark, standard junction temperature index, go the optimization that junction temperature affects to the degeneration index of object time；With the degeneration index table after optimizing
Levy the degree of degeneration of object time IGBT.
Furthermore it is possible to the degeneration index after the optimization of current time contrasted with standard degeneration index, determine this
Bright method can be under the influence of not by variations injunction temperature, the degree of degeneration of accurate characterization object time IGBT.
On the basis of such scheme, following optimal way can be used:
Collector emitter voltage and collector current when turning on according to IGBT calculate junction temperature index and degeneration index
During, all use following methods:
101) in mechanism model when being turned on by IGBT, collector current and two parameters of junction temperature carry out decoupling conversion, in reality
In the range of error that border monitoring allows, following expression formula can be approximately:
Vce,sat≈(kIa·Tj+bIa+Rcontact)·Ic+(kIb+kVT)·Tj+(bIb+bVT)
Wherein, Vce,satCollector emitter voltage when turning on for IGBT, IcCollector current when turning on for IGBT,
TjThe temperature of inside when turning on for IGBT i.e. junction temperature；RcontactFor the resistance at IGBT inside aluminum metal layer and bonding line, its value
Can become big with the intensification of IGBT degree of degeneration；kIa、bIa、kIb、kVT、bIb、bVTBe only with the intrinsic relating to parameters of this IGBT,
And the coefficient unrelated with collector current and junction temperature.
102) from 101) described in expression formula mechanism model extract junction temperature index VnIt is expressed as follows:
Vn=(kIb+kVT)·Tj+(bIb+bVT)
Wherein VnFor junction temperature index, claim constant pressure drop, be about junction temperature TjLinear function.Junction temperature index can characterize junction temperature
Size.
103) from 101) described in expression formula mechanism model extract degeneration index RonIt is expressed as follows:
Ron=kIa·Tj+bIa+Rcontact
Wherein RonFor degeneration index, claim conducting resistance, be about junction temperature TjWith contact resistance RcontactLinear function.Move back
Change index and can characterize contact resistance RcontactSize, and then can characterize IGBT degenerate degree, wherein by variations injunction temperature
Impact is removed by optimization method.
Calculate junction temperature index according to IGBT collector emitter voltage and collector current and degeneration refers to that calibration method is such as
Under:
When gathering IGBT conducting under the most multiple different operating point, collector emitter voltage and collector current, carried out
Linear fit obtains fitting formula, and the slope in fitting formula is degeneration index, and intercept is junction temperature index.Operating point quantity should expire
The requirement of foot linear fit, typically at least 5 points.
Further, in above-mentioned multiple different operating points, between adjacent operating point, the difference of supply voltage value must be in reality
In the normal fluctuation range of border supply voltage value.
Step 1.6) according to the junction temperature index to be measured under the different junction temperature of many groups and degeneration index, calculate identical junction temperature and become
Under change, specifically comprising the following steps that of the proportionality coefficient of the change of degeneration index and the change of junction temperature index
1601) under any two groups of difference junction temperatures, the proportionality coefficient of degeneration index variable quantity and junction temperature index variable quantity
It is expressed as follows:
Wherein, kRVFor proportionality coefficient,It is T for shell temperatureciUnder degeneration index and junction temperature index,It is T for shell temperaturecjUnder degeneration index and junction temperature index；
1602) above-mentioned formula based on abundant group is calculated the proportionality coefficient between group two-by-two, uses suitably system
Meter method draws the statistical value of these proportionality coefficients, as the final scalefactor value obtained under multi-group data in temperature experiment,
Participate in follow-up optimization to calculate.Statistical method can select according to practical situation herein, and statistical value can use intermediate value, average
Etc. characterizing, the data that fractional error is bigger need to first carry out prescreening.
Step 2.3) described in go junction temperature to affect optimization method as follows:
According to the final scalefactor value obtained in temperature experiment, the junction temperature index of object time, the degeneration of object time
Index, standard junction temperature index, make the degeneration index of object time deduct cause because of the variable quantity of relative standard junction temperature relative
The variable quantity of standard degeneration index, is optimized to the degeneration index of junction temperature impact, being expressed as follows of optimization method:
Ron_delT=Ron_cur-(Vn_cur-Vn_std)·kRVm
Wherein, Ron_delTFor the degeneration index after optimizing, Ron_curFor the degeneration index of object time, Vn_curDuring for target
The junction temperature index carved, kRVmStatistical value for the proportionality coefficient that aforesaid statistical obtains；Vn_stdFor junction temperature index in whole monitoring of degenerating
Standard value, by step 2.1) in obtain.
When needs continuous on-line monitoring IGBT degree of degeneration, multiple desired value can be placed equidistant, constantly from repeating
The process of stating is monitored, with reflection IGBT degenerate case in real time.
The present invention compared with prior art provides the benefit that:
1) real time on-line monitoring of IGBT degree of degeneration during this on-line monitoring method can be used for practical work process, the most not
Affected by IGBT working conditions change, i.e. collector current change and the impact of variations injunction temperature.According to the IGBT degeneration journey detected
Degree, carries out early warning, prevents the integrity problem that the catastrophic failure of IGBT brings.
2) simple to operate in this monitoring method, data processing method is simple, can meet the requirement of real time on-line monitoring.
3) data gathered in this monitoring method are the outside electric parameters easily surveyed of IGBT, can be preset in dependence system
Sensor obtains, it is not necessary to the extra sensor increasing other.
4) less demanding to the sample frequency of data in this monitoring method, sampling is easily achieved.
Accompanying drawing explanation
Fig. 1 is the IGBT experimental provision schematic diagram that the present invention uses；
Fig. 2 is IKP01N120H2 of the present invention many group proportionality coefficient scatterplot in temperature experiment；
Fig. 3 is that the IKP01N120H2 of the present invention degeneration index after degenerate monitoring Central Plains degeneration index and optimization is with degeneration
The curve comparison figure that degree is deepened.
Detailed description of the invention
With detailed description of the invention, the present invention is further elaborated below in conjunction with the accompanying drawings.
Insulated gate bipolar transistor using model as IKP01N120H2, as IGBT to be measured, uses the device shown in Fig. 1
Test.The process being implemented in line monitoring method is as follows:
(1) parameter of the main power source in accompanying drawing 1 and digital signal processor is set, makes the electricity of repeated impacts IGBT to be measured
Stream is 3A, and makes IGBT only turn on 10ms in the cycle of every 1s, so will not cause the electric current punching of the repetition of internal significant degradation
Hit, and junction temperature can approximate equal with shell temperature, beginning temperature experiment:
(1.1) make the shell temperature of IGBT constant at 39 DEG C by thermostat；
(1.2) regulating at magnitude of voltage change ± 0.05V and ± 0.10V and the initial value of main power source, each collection one group is to be measured
The collector emitter voltage of IGBT, collector current waveform；
(1.3) part of IGBT conducting in collector emitter voltage and collector current is extracted in above-mentioned five groups of data,
Carrying out linear fit, the slope obtained is the degeneration desired value of the IGBT to be measured not degenerated under this junction temperature, and intercept is junction temperature index
Value；
(1.4) change shell temperature is to 50 DEG C, makes the constant shell temperature value after the change of IGBT shell temperature by thermostat, repeats
(1.2)～(1.3), the junction temperature desired value when IGBT to be measured under current junction temperature does not degenerates and degeneration desired value are obtained；
(1.5) repeat (1.4), but make shell temperature change into 58 DEG C, 74 DEG C, 83 DEG C, 90 DEG C, 109 DEG C successively, obtain altogether 7
Junction temperature desired value when IGBT to be measured does not degenerates under the different junction temperature of group and degeneration desired value；
(1.6) according to the junction temperature index under 7 groups of difference junction temperatures and degeneration index, calculate under any two groups of difference junction temperatures, move back
Changing the proportionality coefficient of index variable quantity and junction temperature index variable quantity, computing formula is expressed as follows:
Wherein, kRVFor proportionality coefficient,It is T for shell temperatureciUnder degeneration index and junction temperature index,It is T for shell temperaturecjUnder degeneration index and junction temperature index.
For obtaining the proportionality coefficient organized in experimentation, often under group shell temperature, Data duplication is adopted three times, therefore obtains 54 groups more
Scalefactor value, the scatterplot obtained is as shown in Figure 2.54 groups of proportionality coefficients are predominantly located in [-10,0] interval interior.Pass through
Comparative study, in the present invention, statistical value is finally chosen as median.The median taking 54 groups of proportionality coefficients is-0.23 Ω/V, makees
For the scalefactor value obtained under multi-group data in temperature experiment.
(2) parameter of the main power source in accompanying drawing 1 and digital signal processor is set, makes the electricity of repeated impacts IGBT to be measured
Stream is 7A, and makes IGBT turn on 10ms in the cycle of every 5s, the power cycle degenerative process of the simulation actual application of IGBT:
(2.1) after on-line monitoring starts, when not there is significant degradation in IGBT, the knot during normal data collected first
Temperature is standard junction temperature.Regulate at magnitude of voltage change ± 0.05V and ± 0.10V and the initial value of DC source, gather IGBT's to be measured
Collector emitter voltage, collector current waveform.Extract collector emitter voltage and colelctor electrode in above-mentioned five groups of data
In electric current, the part of IGBT conducting, carries out linear fit, and the slope obtained is that the standard degeneration of IGBT to be measured under standard junction temperature refers to
Scale value, intercept is standard junction temperature desired value；
(2.2) after the rush of current of 10,000 times, the magnitude of voltage change ± 0.05V and ± 0.10V of regulation DC source
At initial value, the collector emitter voltage of each IGBT to be measured gathering one group of current time, collector current waveform.Extract
In above-mentioned five groups of data, the part of IGBT conducting in collector emitter voltage and collector current, carries out linear fit, obtains
The degeneration desired value that slope is the IGBT to be measured under current time, intercept is junction temperature desired value；
(2.3) according to the proportionality coefficient obtained in temperature experiment, the junction temperature desired value of current time, the degeneration of current time
Desired value, standard junction temperature desired value, make the degeneration desired value of current time deduct and cause because of the variable quantity of relative standard junction temperature
The variable quantity of relative standard degeneration index, be optimized to the degeneration desired value of junction temperature impact, being expressed as follows of optimization method:
Ron_delT=Ron_cur-(Vn_cur-Vn_std)·kRVm
Wherein, Ron_delTFor the degeneration index after optimizing, Ron_curFor the degeneration index of current time, Vn_curFor time current
The junction temperature index carved, kRVmFor the statistical value of proportionality coefficient, for-0.23 Ω/V；Vn_stdFor junction temperature index in whole monitoring of degenerating
Standard value；(2.4) the degeneration index after the optimization of current time is contrasted with standard degeneration index, can not become by junction temperature
Under the influence of change, the degree of degeneration of accurate characterization current time IGBT.
Altogether through the impact of about 180,000 times in this experiment, gather 3 groups of experimental datas, obtain totally 54 groups for the most each ten thousand times
Data.After data handling procedure, the curve that the degeneration index after obtaining former degeneration index and optimizing is deepened with degree of degeneration
Figure is such as accompanying drawing 3.
In accompanying drawing 3, dotted line is the change curve that former degeneration index is deepened with degree of degeneration, and solid line is that the degeneration after optimizing refers to
Mark the change curve deepened with degree of degeneration, by the contrast of both curves, illustrate the effectiveness of optimization method, can make to move back
The undulatory property changing index is obviously reduced, and improves the accuracy of degeneration index.
Meanwhile, in accompanying drawing 3, in front 42 groups of data, degeneration index the most significantly changes, and illustrates that this repeated stream impact process
In, IGBT does not occur significantly to degenerate；And the data after 42 groups have the trend significantly increased.Result shows, this is online
Monitoring method can effectively monitor the degree of degeneration of IGBT, and is not affected by collector current and variations injunction temperature.
Claims (6)
1. the on-line monitoring method that an insulated gate bipolar transistor is degenerated, it is characterised in that comprise the following steps:
1) Control release condition, carries out temperature experiment to IGBT to be measured, specifically includes following sub-step:
1.1) the shell temperature of IGBT to be measured is made to be constant at target temperature by thermostat；
1.2) collector emitter voltage and the collector current waveform of IGBT to be measured are gathered；
1.3) collector emitter voltage when extracting IGBT conducting and collector current, and calculate under this junction temperature to be measured
Junction temperature index when IGBT does not degenerates and degeneration index；
1.4) change shell temperature, make the constant shell temperature value after the change of IGBT shell temperature by thermostat, repeat 1.2)～1.3),
Junction temperature index when IGBT to be measured under current junction temperature does not degenerates and degeneration index；
1.5) 1.4 are repeated) several times, obtain the junction temperature index under different junction temperature and degeneration index；
1.6) according to the junction temperature index to be measured under the above-mentioned different junction temperature of many groups and degeneration index, identical variations injunction temperature is calculated
Under, degeneration index variable quantity and the proportionality coefficient of junction temperature index variable quantity；
2) IGBT to be measured in practical work process is carried out on-line monitoring, specifically includes following sub-step:
2.1) gather after some groups of on-line monitorings start and IGBT does not occur the colelctor electrode-emitter stage of the IGBT to be measured when degenerating
Voltage and collector current waveform, select the junction temperature in collector emitter voltage and collector current value all normal moment to make
For standard junction temperature, and collector emitter voltage and the collector current when this group extracting data turns on calculates knot
Temperature index and degeneration index, as standard junction temperature index and standard degeneration index；
2.2) when needing the degree of degeneration monitoring the object time of IGBT to be measured, the current collection of the IGBT to be measured of object time is gathered
Pole-emitter voltage and collector current, extract turning part, calculates the junction temperature index of the IGBT to be measured of object time and moves back
Change index；
2.3) according to step 1.6) in obtain proportionality coefficient, the junction temperature index of object time, the degeneration index of object time, mark
Quasi-junction temperature index, goes the optimization that junction temperature affects to the degeneration index of object time；With the degeneration index characterization mesh after optimizing
Timestamp carves the degree of degeneration of IGBT.
The on-line monitoring method that a kind of insulated gate bipolar transistor the most according to claim 1 is degenerated, it is characterised in that
Collector emitter voltage when turning on according to IGBT and collector current calculates junction temperature index and degeneration refers to that calibration method is such as
Under:
101) in mechanism model when being turned on by IGBT, collector current and two parameters of junction temperature carry out decoupling conversion, expression formula
For:
Vce,sat≈(kIa·Tj+bIa+Rcontact)·Ic+(kIb+kVT)·Tj+(bIb+bVT)
Wherein, Vce,satCollector emitter voltage when turning on for IGBT, IcCollector current when turning on for IGBT, TjFor
The temperature i.e. junction temperature of inside during IGBT conducting；RcontactFor the resistance at IGBT inside aluminum metal layer and bonding line；kIa、bIa、
kIb、kVT、bIb、bVTIt is the correlation coefficient of IGBT；
102) from 101) described in expression formula extract junction temperature index VnIt is expressed as follows:
Vn=(kIb+kVT)·Tj+(bIb+bVT)
103) from 101) described in expression formula extract degeneration index RonIt is expressed as follows:
Ron=kIa·Tj+bIa+Rcontact。
The on-line monitoring method that a kind of insulated gate bipolar transistor the most according to claim 1 is degenerated, it is characterised in that
Calculate junction temperature index according to IGBT collector emitter voltage and collector current and degeneration refer to that calibration method is as follows:
Collector emitter voltage and collector current when gathering IGBT conducting under the most multiple different operating point, carry out linear
Matching obtains fitting formula, and the slope in fitting formula is degeneration index, and intercept is junction temperature index.
The on-line monitoring method that a kind of insulated gate bipolar transistor the most according to claim 3 is degenerated, it is characterised in that
In described multiple different operating points, between adjacent operating point, the difference of supply voltage value must normal at practical power magnitude of voltage
In fluctuation range.
The on-line monitoring method that a kind of insulated gate bipolar transistor the most according to claim 1 is degenerated, it is characterised in that
Step 1.6) Computational Methods is as follows:
1601), under two groups of difference junction temperatures, degeneration index variable quantity is expressed as follows with the proportionality coefficient of junction temperature index variable quantity:
Wherein, kRVFor proportionality coefficient,It is T for shell temperatureciUnder degeneration index and junction temperature index,For
Shell temperature is TcjUnder degeneration index and junction temperature index；
1602) based on organizing proportionality coefficient, use statistical method to draw the statistical value of proportionality coefficient, as in temperature experiment many groups more
The scalefactor value obtained under data.
The on-line monitoring method that a kind of insulated gate bipolar transistor the most according to claim 1 is degenerated, it is characterised in that
Step 2.3) described in go junction temperature to affect optimization method as follows:
According to the proportionality coefficient obtained in temperature experiment, the junction temperature index of object time, the degeneration index of object time, standard knots
Temperature index, makes the degeneration index of object time deduct the relative standard degeneration index caused because of the variable quantity of relative standard junction temperature
Variable quantity, be optimized to junction temperature impact degeneration index, being expressed as follows of optimization method:
Ron_delT=Ron_cur-(Vn_cur-Vn_std)·kRVm
Wherein, Ron_delTFor the degeneration index after optimizing, Ron_curFor the degeneration index of object time, Vn_curFor object time
Junction temperature index, kRVmStatistical value for proportionality coefficient；Vn_stdFor the standard value of junction temperature index in whole monitoring of degenerating.
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| CN109521348A (en) * | 2018-11-12 | 2019-03-26 | 重庆大学 | A kind of reliability test of dc circuit breaker IGBT module and lifetime estimation method |
| CN109581179A (en) * | 2018-12-24 | 2019-04-05 | 天津城建大学 | A kind of insulated gate bipolar transistor junction temperature measurement method |
| CN109738773A (en) * | 2018-06-19 | 2019-05-10 | 北京航空航天大学 | IGBT module life-span prediction method under a kind of non-stationary operating condition |
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| CN111060798B (en) * | 2019-12-18 | 2021-10-15 | 中国测试技术研究院流量研究所 | Automatic power aging test system and test method for MOS (metal oxide semiconductor) tube |
| CN112906333A (en) * | 2021-01-22 | 2021-06-04 | 武汉大学 | Photovoltaic inverter IGBT junction temperature online correction method and system considering aging |
| US20220236756A1 (en) * | 2021-01-22 | 2022-07-28 | Wuhan University | Method and system for online correction of junction temperatures of igbt in photovoltaic inverter considering aging process |
| US11579644B2 (en) * | 2021-01-22 | 2023-02-14 | Wuhan University | Method and system for online correction of junction temperatures of IGBT in photovoltaic inverter considering aging process |
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