CN103105571B - Simulated measurement method of current characteristics of insulated gate bipolar transistor - Google Patents
Simulated measurement method of current characteristics of insulated gate bipolar transistor Download PDFInfo
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Abstract
The invention discloses a simulated measurement method of current characteristics of an insulated gate bipolar transistor. The simulated measurement method of the current characteristics of the insulated gate bipolar transistor includes the following steps of: step 10, obtaining test conduction characteristic and output characteristic of the insulated gate bipolar transistor, step 20, establishing a simulated circuit of an internal integrated model of an simulated program, step 30, establishing a corresponding relationship between an actual collector voltage and a corrected collector voltage, step 40, obtaining correction factors of the actual collector voltage and the corrected collector voltage, step 50, stimulatingly establishing a first-time corrected actual conduction characteristic, step 60, establishing a corresponding relationship between an actual grid voltage and a corrected grid voltage, step 70, obtaining correction factors of the actual grid voltage and the corrected grid voltage, and step 80, stimulatingly establishing a second-time corrected actual output characteristic. The simulated measurement method of the current characteristics of the insulated gate bipolar transistor solves the problem that current characteristics of insulated gate bipolar transistor integrated inside of a simulation program with intergraded circuit emphasis (PSPICE) are low in degree of accuracy.
Description
Technical field
The present invention relates to the emulation field of high voltage power semiconductor device, specifically, relate to a kind of in emphasis integrated circuit simulating program PSPICE, the current measuring method of high voltage power device insulated gate bipolar transistor.
Background technology
Along with the development of electron electric power technology, power semiconductor device, as the basic electronic devices and components of energy hole in electric power systems and conversion, obtains applying more and more widely.The insulated gate bipolar device (insulated gate bipolar transistor) that the eighties in last century occurs integrates big current processing power and isolated-gate field effect transistor (IGFET) (MOSFET) the grid voltage control characteristic of high-voltage three-pole pipe (BJT), have that input impedance is high, switching speed is fast, driving power is little, the advantages such as the large and conduction impedance of current driving ability is low, be the power semiconductor device of near ideal, there is development and application prospect widely.
Integrated circuit is the bridge connecting practical devices and circuit simulation with device model.On the working mechanism that the SPICE model of integrated circuit device is based upon basic components and parts (as transistor, insulated gate bipolar transistor, resistance, electric capacity etc.) and physical details, may be used for SPICE emulator, accurately in the Static and dynamic operating characteristic of circuit-level, device level analogue system emulation device, the logic function of verification system, carries out system-level signal integrity analysis.Therefore, SPICE model is widely used in integrated circuit design.
Focusing on integrated circuit simulating program PSPICE is integrated circuit SPICE(Simulation Program withIntegrated Circuit Emphasis) one in simulation software, be mainly used in the computer-aided design (CAD) of large scale integrated circuit.Focus on integrated circuit simulating program PSPICE there is powerful circuit diagram to draw function, breadboardin copying, symplectic algorithm function and components and parts symbol making function, comprising supporting AA(Advanced Analysis) the patterned insulated gate bipolar transistor model analyzed.The model parameter focusing on can extracting the insulated gate bipolar transistor model current characteristic aspect in integrated circuit simulating program PSPICE mainly contains parameter VTO, parameter KP, parameter RD, parameter RS, but this can not simulate the characteristic of actual insulation grid bipolar transistor device very accurately, therefore, in order to the electrology characteristic of accurate simulation circuit and insulated gate bipolar transistor, need the insulated gate bipolar transistor model to focusing in integrated circuit simulating program PSPICE to revise.Invention describes a kind of method basis focusing on the inner integrated insulated gate bipolar transistor model of integrated circuit simulating program PSPICE being carried out improve, the model of the insulated gate bipolar transistor after improvement is compared with insulated gate bipolar transistor model original in emphasis integrated circuit simulating program PSPICE, and the precision of on state characteristic and output characteristics is significantly improved.
Summary of the invention
Technical matters: the current characteristics assay method that the invention provides a kind of insulated gate bipolar transistor based on emulation, the method is simply effective, can solve and focus on the inner integrated insulated gate bipolar transistor artificial actual on state characteristic of integrated circuit simulating program PSPICE, the problem that actual output characteristics precision is not high.
Technical scheme: in order to solve the problems of the technologies described above, the present invention adopts following technical scheme:
Step:
Step 10), from the instructions of insulated gate bipolar transistor, obtains test conduction characteristic and the test output characteristics of insulated gate bipolar transistor,
Step 20) grid and collector of focusing on the inner integrated insulated gate bipolar transistor model of integrated circuit simulating program PSPICE are connect direct supply respectively, grid connect the output voltage of direct supply and collector connect direct supply output voltage equal grid voltage in test conduction characteristic and collector voltage respectively, set up the artificial circuit focusing on the inner integrated insulated gate bipolar transistor model of integrated circuit simulating program PSPICE
Step 201) respectively from focusing on, the inner integrated insulated gate bipolar transistor model of integrated circuit simulating program PSPICE, obtaining parameter VTO, the parameter KP of insulated gate bipolar transistor model, the initial value of parameter RD and parameter RS,
Step 202) utilize and focus on the actual on state characteristic that integrated circuit simulating program PSPICE emulation obtains the insulated gate bipolar transistor under instructions test condition,
Step 203) if the error between test conduction characteristic and the actual on state characteristic of emulation is less than thresholding 40%, then enter step 30), otherwise, enter step 204),
Step 204) make VTO value=VTO value+0.01V, KP value=KP value+0.01cm
2/ vs, RD value=RD value+0.01 Ω, RS value=RS value+0.01 Ω, and return step 202),
Step 30) set up the corresponding relation of actual collector voltage and trim set electrode voltage,
Step 301) for test conduction characteristic, actual collector voltage, from 0V, every 0.5V, searches the measuring current value in the test conduction characteristic under corresponding collector voltage,
Step 302) for actual on state characteristic, according to step 301) the measuring current value that finds, a collector voltage corresponding to described measuring current value is found in actual on state characteristic, deduct corresponding actual collector voltage with a described collector voltage and obtain secondary collector voltage, described secondary collector voltage is designated as trim set electrode voltage, set up the corresponding relation of actual collector voltage and trim set electrode voltage
Step 40) according to step 302) corresponding relation of the actual collector voltage set up and trim set electrode voltage, utilize the polynomial fit function polyfit in MATLAB simulation software, input 3 parameters, be respectively actual collector voltage, trim set electrode voltage, exponent number 3, computing obtains 4 trim set electrode voltage coefficients
Step 50) emulate the actual on state characteristic setting up the insulated gate bipolar transistor once revised,
Step 501) utilize and focus on the inner integrated Voltage-controlled Current Source of integrated circuit simulating program PSPICE, this Voltage-controlled Current Source is designated as the first Voltage-controlled Current Source, by collector connect direct supply and remove from the collector of insulated gate bipolar transistor model, and by the collector removed connect direct supply output terminal be connected to the electrode input end of the first Voltage-controlled Current Source and the cathode output end of the first Voltage-controlled Current Source, again the cathode output end of the first Voltage-controlled Current Source is connected to the collector of insulated gate bipolar transistor model, the artificial circuit of the insulated gate bipolar transistor model once revised,
Step 502) in emphasis integrated circuit simulating program PSPICE, open the attribute of the first Voltage-controlled Current Source, step 40 is inserted on coefficient one hurdle) 4 trim set electrode voltage coefficients obtaining, emulate the actual on state characteristic of the insulated gate bipolar transistor once revised
Step 60) set up actual gate voltage and the corresponding relation revising grid voltage,
Step 601) for the test output characteristics described in step 10), device detection saturation current corresponding under finding each grid voltage successively,
Step 602) according to step 501) artificial circuit of the insulated gate bipolar transistor model once revised set up, emulation obtains the actual transfer characteristic of insulated gate bipolar transistor,
Step 603) according to step 601) search the test saturation current obtained, in step 602) emulate in the actual transfer family curve obtained the grid voltage searched corresponding to described test saturation current, deduct corresponding actual gate voltage with a described grid voltage and obtain secondary grid voltage, described secondary grid voltage is denoted as correction grid voltage, the corresponding relation set up actual gate voltage and revise between grid voltage
Step 70) according to step 603) the actual gate voltage set up and the corresponding relation revising grid voltage, utilize the polynomial fit function polyfit in MATLAB simulation software, input 3 parameters, be respectively actual gate voltage, revise grid voltage, exponent number 3, computing obtains 4 and revises grid voltage coefficient
Step 80) emulate the actual output characteristics setting up the insulated gate bipolar transistor of second-order correction,
Step 801) utilize and focus on the inner integrated Voltage-controlled Current Source of integrated circuit simulating program PSPICE, this Voltage-controlled Current Source is designated as the second Voltage-controlled Current Source, according to step 501) artificial circuit of the insulated gate bipolar transistor model once revised that obtains, by grid connect direct supply and remove from the grid of insulated gate bipolar transistor model, and by the grid removed connect direct supply output terminal be connected to the electrode input end of the second Voltage-controlled Current Source and the cathode output end of the second Voltage-controlled Current Source, again the cathode output end of the second Voltage-controlled Current Source is connected to the grid of insulated gate bipolar transistor model, obtain the artificial circuit of the insulated gate bipolar transistor model of second-order correction,
Step 802) in emphasis integrated circuit simulating program PSPICE, open the attribute of the second Voltage-controlled Current Source, insert step 70 on coefficient one hurdle) obtain 4 revise grid voltage coefficients, emulation obtains the actual output characteristics of the insulated gate bipolar transistor of second-order correction.
Compared with prior art, tool of the present invention has the following advantages:
(1), the present invention is based on and focus on the inner integrated insulated gate bipolar transistor model of integrated circuit simulating program PSPICE, and add on the basis of the integrated insulated gate bipolar transistor model in inside and focus on the first inner integrated Voltage-controlled Current Source of integrated circuit simulating program PSPICE, second Voltage-controlled Current Source, revise the first Voltage-controlled Current Source, the attribute of the second Voltage-controlled Current Source, respectively collector voltage and grid voltage are revised, after revising, the current characteristics precision of insulated gate bipolar transistor is greatly improved, saturation region current precision improves more than 20%.The artificial circuit figure of the insulated gate bipolar transistor model of second-order correction is see accompanying drawing 4.Fig. 5 respectively illustrates the actual on state characteristic focusing on the inner integrated insulated gate bipolar transistor model of integrated circuit simulating program PSPICE, the artificial circuit of the insulated gate bipolar transistor model of second-order correction emulates the actual on state characteristic obtained, test conduction characteristic, test conduction characteristic is the instructions of the insulated gate bipolar transistor of 5SNA0600G650100 based on the model of ABB AB, as can be seen from the figure, the collector current focusing on the inner integrated insulated gate bipolar transistor model of integrated circuit simulating program PSPICE along with the rising of collector voltage be almost linear change, regulating parameter KP, parameter RD, the value of parameter RS can only change the slope of rising, the application condition focusing on the inner integrated insulated gate bipolar transistor model of integrated circuit simulating program PSPICE is large, and increase by the first Voltage-controlled Current Source, the insulated gate bipolar transistor model of the second Voltage-controlled Current Source can be more accurate matching test conduction feature set electrode current to rise this more and more faster characteristic along with the increase of collector voltage.Fig. 6, Fig. 7, Fig. 8 respectively illustrates the actual output characteristics focusing on the inner integrated insulated gate bipolar transistor model of integrated circuit simulating program PSPICE, the artificial circuit of the insulated gate bipolar transistor model of second-order correction emulates the actual output characteristics obtained, test output characteristics, as can be seen from the figure, focus on the inner integrated insulated gate bipolar transistor model of integrated circuit simulating program PSPICE and be respectively 9V at grid voltage, 11V, actual saturation current during 13V is difficult to the test saturation current under the corresponding condition of overall fit, when actual gate voltage is 13V, the actual saturation current focusing on the artificial circuit emulation of the inner integrated insulated gate bipolar transistor model of integrated circuit simulating program PSPICE is 1161A, test saturation current is 1110A, when actual gate voltage is 11V, the actual saturation current focusing on the artificial circuit emulation of the inner integrated insulated gate bipolar transistor model of integrated circuit simulating program PSPICE is 621A, and test saturation current is 360A, when actual gate voltage is 9V, the actual saturation current focusing on the artificial circuit emulation of the inner integrated insulated gate bipolar transistor model of integrated circuit simulating program PSPICE is 136A, and test saturation current is 60A.And increase by the first Voltage-controlled Current Source, the insulated gate bipolar transistor model of the second Voltage-controlled Current Source carried out correction in various degree to each actual gate voltage, when actual gate voltage is 13V, it is 1103A that the artificial circuit of the insulated gate bipolar transistor model of second-order correction emulates the actual saturation current obtained; When actual gate voltage is 11V, it is 358A that the artificial circuit of the insulated gate bipolar transistor model of second-order correction emulates the actual saturation current obtained; When actual gate voltage is 9V, it is 51A that the artificial circuit of the insulated gate bipolar transistor model of second-order correction emulates the actual saturation current obtained, and test saturation current results contrast is close.
(2), this modification method has versatility, the insulated gate bipolar transistor of different model has different test conduction characteristics, test output characteristics, the first different separately Voltage-controlled Current Source can be obtained by described modification method, the coefficient of the second Voltage-controlled Current Source, realizes the matching of the current characteristics of the insulated gate bipolar transistor for different model.
(3), focus on the inner integrated insulated gate bipolar transistor model of integrated circuit simulating program PSPICE in increase by first Voltage-controlled Current Source, after the second Voltage-controlled Current Source, still can support that AA analyzes.
Accompanying drawing explanation
Fig. 1 is process flow diagram of the present invention.
Fig. 2 is the artificial circuit figure focusing on the inner integrated insulated gate bipolar transistor model of integrated circuit simulating program PSPICE.
Fig. 3 is increase by first Voltage-controlled Current Source E1, the artificial circuit figure of the insulated gate bipolar transistor model once revised.
Fig. 4 is that the present invention increases by the first Voltage-controlled Current Source E1, and the second Voltage-controlled Current Source E2 obtains the artificial circuit figure of the insulated gate bipolar transistor model of second-order correction.
Fig. 5 be focus on actual on state characteristic that the inner integrated insulated gate bipolar transistor model emulation of integrated circuit simulating program PSPICE obtains, the artificial circuit of insulated gate bipolar transistor model of second-order correction emulates the actual on state characteristic, the test conduction characteristic that obtain.
Fig. 6 be focus on that the inner integrated insulated gate bipolar transistor model emulation of integrated circuit simulating program PSPICE obtains actual output characteristics.
Fig. 7 is that the artificial circuit of the insulated gate bipolar transistor model of second-order correction emulates the actual output characteristics obtained.
Fig. 8 is test output characteristics.
Embodiment
Technical scheme of the present invention is further illustrated below in conjunction with accompanying drawing.
As shown in Figure 1, the current characteristics assay method of a kind of insulated gate bipolar transistor based on emulation of the present invention, comprises the following steps:
Step 10) is the instructions of the insulated gate bipolar transistor of 5SNA0600G650100 from the model of ABB AB, obtains test conduction characteristic and the test output characteristics of insulated gate bipolar transistor,
Step 20) in emphasis integrated circuit simulating program PSPICE, call the insulated gate bipolar transistor model that software inhouse is integrated, set up artificial circuit as shown in Figure 2, the grid and collector of focusing on the inner integrated insulated gate bipolar transistor model of integrated circuit simulating program PSPICE are connect direct supply respectively, the fixed voltage of V1=15V is loaded at grid, be 0-6V at collector loading range, step-length is the voltage V2 of 0.1V
Step 201) respectively from focusing on the inner integrated insulated gate bipolar transistor model of integrated circuit simulating program PSPICE, the initial value obtaining the parameter VTO of insulated gate bipolar transistor model is 4.2V, the initial value of parameter KP is 0.34cm
2the initial value of/vs, parameter RD is 0.03 Ω, the initial value of parameter RS is 0.02 Ω,
Step 202) utilize and focus on the actual on state characteristic that integrated circuit simulating program PSPICE emulation obtains insulated gate bipolar transistor,
Step 203) error between the actual on state characteristic that emulates and test conduction characteristic is greater than thresholding 40%,
Step 204) make VTO value=VTO value+0.01V, KP value=KP value+0.01cm
2/ vs, RD value=RD value+0.01 Ω, RS value=RS value+0.01 Ω, and return step 202), emulation obtains the actual on state characteristic of insulated gate bipolar transistor again, and through circulation, finally to obtain parameter VTO value be 7.4V, parameter KP value is 0.85cm
2/ vs, parameter RD value is 0.08 Ω, parameter RS value is 0.02 Ω,
Step 30) set up the corresponding relation of actual collector voltage and trim set electrode voltage,
Step 301) for test conduction characteristic, actual collector voltage is from 0V, every 0.5V, search the measuring current value in the test conduction characteristic under corresponding collector voltage, when to obtain actual collector voltage be 0V, measuring current is 0A, when actual collector voltage is 0.5V, measuring current is 0.0003A, when actual collector voltage is 1.0V, measuring current is 1A, when actual collector voltage is 1.5V, measuring current is 30A, when actual collector voltage is 2.0V, measuring current is 55A, when actual collector voltage is 2.5V, measuring current is 125A, when actual collector voltage is 3.0V, measuring current is 240A, when actual collector voltage is 3.5V, measuring current is 380A, when actual collector voltage is 4.0V, measuring current is 535A, when actual collector voltage is 4.5V, measuring current is 710A, when actual collector voltage is 5.0V, measuring current is 900A, when actual collector voltage is 5.5V, measuring current is 1100A, when actual collector voltage is 6.0V, measuring current is 1340A,
Step 302) for actual on state characteristic, according to step 301) the measuring current value that finds, the first collector voltage corresponding to described measuring current value is found in actual on state characteristic, deduct corresponding actual collector voltage with a described collector voltage and obtain secondary collector voltage, described secondary collector voltage is designated as trim set electrode voltage, set up the corresponding relation of actual collector voltage and trim set electrode voltage, when to obtain actual collector voltage be 0V, trim set electrode voltage is 0V, when actual collector voltage is 0.5V, trim set electrode voltage is 0V, when actual collector voltage is 1.0V, trim set electrode voltage is-0.03V, when actual collector voltage is 1.5V, trim set electrode voltage is-0.05V, when actual collector voltage is 2.0V, trim set electrode voltage is-0.15V, when actual collector voltage is 2.5V, trim set electrode voltage is-0.05V, when actual collector voltage is 3.0V, trim set electrode voltage is 0.44V, when actual collector voltage is 3.5V, trim set electrode voltage is 1.15V, when actual collector voltage is 4.0V, trim set electrode voltage is 2.05V, when actual collector voltage is 4.5V, trim set electrode voltage is 3V, when actual collector voltage is 5.0V, trim set electrode voltage is 4.1V, when actual collector voltage is 5.5V, trim set electrode voltage is 5.35V, when actual collector voltage is 6.0V, trim set electrode voltage is 6.2V,
Step 40) according to step 302) corresponding relation of the actual collector voltage set up and trim set electrode voltage, utilize the polynomial fit function polyfit in MATLAB simulation software, input 3 parameters, be respectively actual collector voltage, trim set electrode voltage, exponent number 3, computing obtains 4 trim set electrode voltage coefficients, be respectively 0,0.6891 ,-0.1113,0.0612
Step 50) emulate the actual on state characteristic setting up the insulated gate bipolar transistor once revised,
Step 501) utilize and focus on the inner integrated Voltage-controlled Current Source of integrated circuit simulating program PSPICE, as shown in Figure 3, the basis of Fig. 2 increases the first Voltage-controlled Current Source E1, by collector connect direct supply and remove from the collector of insulated gate bipolar transistor model, and by the collector removed connect direct supply output terminal be connected to the electrode input end of the first Voltage-controlled Current Source E1 and the cathode output end of the first Voltage-controlled Current Source, again the cathode output end of the first Voltage-controlled Current Source E1 is connected to the collector of insulated gate bipolar transistor model, the artificial circuit of the insulated gate bipolar transistor model once revised,
Step 502) in emphasis integrated circuit simulating program PSPICE, open the attribute of the first Voltage-controlled Current Source E1, step 40 is inserted on coefficient one hurdle) 4 trim set electrode voltage coefficients obtaining, emulate the actual on state characteristic of the insulated gate bipolar transistor once revised
Step 60) set up actual gate voltage and the corresponding relation revising grid voltage,
Step 601) for the test output characteristics described in step 10), device detection saturation current corresponding under finding each grid voltage successively, when to obtain actual gate voltage be 9V, test saturation current is 60A, when actual gate voltage is 11V, test saturation current is 360A, when actual gate voltage is 13V, test saturation current is 1110A
Step 602) according to step 501) artificial circuit of the insulated gate bipolar transistor model once revised set up, emulation obtains the actual transfer characteristic of insulated gate bipolar transistor, the collector of insulated gate bipolar transistor loads fixing voltage V2=20V, grid loading range is 0-15V, step-length is the voltage V1 of 0.1V
Step 603) according to step 601) search the test saturation current obtained, in step 602) emulate in the actual transfer family curve obtained the grid voltage searched corresponding to described test saturation current, deduct corresponding actual gate voltage with a described grid voltage and obtain secondary grid voltage, described secondary grid voltage is denoted as correction grid voltage, the corresponding relation set up actual gate voltage and revise between grid voltage, when to obtain actual gate voltage be 9V, revising grid voltage is-1.2V, when actual gate voltage is 11V, revising grid voltage is-2.7V, when actual gate voltage is 13V, revising grid voltage is-0.2V,
Step 70) according to step 603) the actual gate voltage set up and the corresponding relation revising grid voltage, utilize the polynomial fit function polyfit in MATLAB simulation software, input 3 parameters, be respectively actual gate voltage, revise grid voltage, exponent number 3, computing obtains 4 correction grid voltage coefficients and is respectively 0,2.7693 ,-0.3805,0.0187
Step 80) emulate the actual output characteristics setting up the insulated gate bipolar transistor of second-order correction,
Step 801) utilize and focus on the inner integrated Voltage-controlled Current Source of integrated circuit simulating program PSPICE, as shown in Figure 4, the basis of Fig. 3 increases the second Voltage-controlled Current Source E2, according to step 501) artificial circuit of the insulated gate bipolar transistor model once revised that obtains, by grid connect direct supply and remove from the grid of insulated gate bipolar transistor model, and by the grid removed connect direct supply output terminal be connected to the electrode input end of the second Voltage-controlled Current Source E2 and the cathode output end of the second Voltage-controlled Current Source E2, again the cathode output end of the second Voltage-controlled Current Source E2 is connected to the grid of insulated gate bipolar transistor model, obtain the artificial circuit of the insulated gate bipolar transistor model of second-order correction, be 9-13V at the input end loading range of E2, step-length is the voltage V1 of 2V, be simultaneously 0-6V at the input end loading range of E1, step-length is the voltage V2 of 0.1V,
Step 802) in emphasis integrated circuit simulating program PSPICE, open the attribute of the second Voltage-controlled Current Source, insert step 70 on coefficient one hurdle) obtain 4 revise grid voltage coefficients, emulation obtains the actual output characteristics of the insulated gate bipolar transistor of second-order correction.
Claims (1)
1., based on a current characteristics assay method for the insulated gate bipolar transistor of emulation, it is characterized in that: the method comprises the following steps:
Step 10) from the instructions of insulated gate bipolar transistor, obtain test conduction characteristic and the test output characteristics of insulated gate bipolar transistor, described test conduction characteristic is that the grid of insulated gate bipolar transistor connects fixed voltage, this added fixed voltage is greater than the threshold voltage of device, scan the relation curve of the corresponding collector current of one group of collector voltage that collector voltage obtains from low to high, described test output characteristics be insulated gate bipolar transistor grid voltage from lower than threshold voltage variation to higher than the process of threshold voltage, under each grid voltage of correspondence, scan the relation curve of the corresponding collector current of one group of collector voltage that collector voltage obtains from low to high,
Step 20) grid of insulated gate bipolar transistor model inner integrated for integrated for individual circuit emulation program PSPICE and collector are connect direct supply respectively, grid connect the output voltage of direct supply and collector connect direct supply output voltage equal grid voltage in test conduction characteristic and collector voltage respectively, set up the artificial circuit of the inner integrated insulated gate bipolar transistor model of individual integrated circuit emulation program PSPICE
Step 201) respectively from the inner integrated insulated gate bipolar transistor model of individual's integrated circuit emulation program PSPICE, obtain parameter VTO, the parameter KP of insulated gate bipolar transistor model, the initial value of parameter RD and parameter RS,
Step 202) utilize individual integrated circuit emulation program PSPICE emulation to obtain the actual on state characteristic of the insulated gate bipolar transistor under instructions test condition,
Step 203) if the error between test conduction characteristic and the actual on state characteristic of emulation is less than thresholding 40%, then enter step 30), otherwise, enter step 204),
Step 204) make VTO value=VTO value+0.01V, KP value=KP value+0.01cm
2/ vs, RD value=RD value+0.01 Ω, RS value=RS value+0.01 Ω, wherein, V is the unit of parameter VTO, cm
2/ vs is the unit of parameter KP, and Ω is the unit of parameter RD and parameter RS, and returns step 202),
Step 30) set up the corresponding relation of actual collector voltage and trim set electrode voltage,
Step 301) for test conduction characteristic, actual collector voltage, from 0V, every 0.5V, searches the measuring current value in the test conduction characteristic under corresponding collector voltage,
Step 302) for actual on state characteristic, according to step 301) the measuring current value that finds, a collector voltage corresponding to described measuring current value is found in actual on state characteristic, deduct corresponding actual collector voltage with a described collector voltage and obtain secondary collector voltage, described secondary collector voltage is designated as trim set electrode voltage, set up the corresponding relation of actual collector voltage and trim set electrode voltage
Step 40) according to step 302) corresponding relation of the actual collector voltage set up and trim set electrode voltage, utilize the polynomial fit function polyfit in MATLAB simulation software, input 3 parameters, be respectively actual collector voltage, trim set electrode voltage, exponent number 3, computing obtains 4 trim set electrode voltage coefficients
Step 50) emulate the actual on state characteristic setting up the insulated gate bipolar transistor once revised,
Step 501) Voltage-controlled Current Source that utilizes individual integrated circuit emulation program PSPICE inner integrated, this Voltage-controlled Current Source is designated as the first Voltage-controlled Current Source, by collector connect direct supply and remove from the collector of insulated gate bipolar transistor model, and by the collector removed connect direct supply output terminal be connected to the electrode input end of the first Voltage-controlled Current Source and the cathode output end of the first Voltage-controlled Current Source, again the cathode output end of the first Voltage-controlled Current Source is connected to the collector of insulated gate bipolar transistor model, the artificial circuit of the insulated gate bipolar transistor model once revised,
Step 502) in the integrated circuit emulation program PSPICE of individual, open the attribute of the first Voltage-controlled Current Source, step 40 is inserted on coefficient one hurdle) 4 trim set electrode voltage coefficients obtaining, emulate the actual on state characteristic of the insulated gate bipolar transistor once revised
Step 60) set up actual gate voltage and the corresponding relation revising grid voltage,
Step 601) for step 10) described in test output characteristics, find device detection saturation current corresponding under each grid voltage successively,
Step 602) according to step 501) artificial circuit of the insulated gate bipolar transistor model once revised set up, emulation obtains the actual transfer characteristic of insulated gate bipolar transistor, described actual transfer characteristic is that the collector of insulated gate bipolar transistor connects fixing voltage, the relation curve of the corresponding collector current of the grid voltage that obtains of raster pole tension from low to high
Step 603) according to step 601) search the test saturation current obtained, in step 602) emulate in the actual transfer family curve obtained the grid voltage searched corresponding to described test saturation current, deduct corresponding actual gate voltage with a described grid voltage and obtain secondary grid voltage, described secondary grid voltage is denoted as correction grid voltage, the corresponding relation set up actual gate voltage and revise between grid voltage
Step 70) according to step 603) the actual gate voltage set up and the corresponding relation revising grid voltage, utilize the polynomial fit function polyfit in MATLAB simulation software, input 3 parameters, be respectively actual gate voltage, revise grid voltage, exponent number 3, computing obtains 4 and revises grid voltage coefficient
Step 80) emulate the actual output characteristics setting up the insulated gate bipolar transistor of second-order correction,
Step 801) Voltage-controlled Current Source that utilizes individual integrated circuit emulation program PSPICE inner integrated, this Voltage-controlled Current Source is designated as the second Voltage-controlled Current Source, according to step 501) artificial circuit of the insulated gate bipolar transistor model once revised that obtains, by grid connect direct supply and remove from the grid of insulated gate bipolar transistor model, and by the grid removed connect direct supply output terminal be connected to the electrode input end of the second Voltage-controlled Current Source and the cathode output end of the second Voltage-controlled Current Source, again the cathode output end of the second Voltage-controlled Current Source is connected to the grid of insulated gate bipolar transistor model, obtain the artificial circuit of the insulated gate bipolar transistor model of second-order correction,
Step 802) in the integrated circuit emulation program PSPICE of individual, open the attribute of the second Voltage-controlled Current Source, insert step 70 on coefficient one hurdle) obtain 4 revise grid voltage coefficients, emulation obtains the actual output characteristics of the insulated gate bipolar transistor after second-order correction.
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| CN112560381B (en) * | 2020-12-14 | 2023-07-28 | 厦门市三安集成电路有限公司 | Gallium nitride-based high electron mobility transistor simulation method, device and storage medium |
| CN114062896A (en) * | 2021-11-11 | 2022-02-18 | 深圳市慧邦电子科技有限公司 | Finished product testing method of integrated circuit and storage medium |
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