CN105631083A - Method for establishing high-voltage IGBT module switch transient model suitable for circuit simulation - Google Patents
Method for establishing high-voltage IGBT module switch transient model suitable for circuit simulation Download PDFInfo
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Abstract
The invention provides a method for establishing a high-voltage IGBT module switch transient model suitable for circuit simulation. The model establishment method includes methods for establishing an IGBT switch transient model and an anti-parallel diode reverse recovery model. According to the method, a model can be established in circuit simulation platforms such as PSCAD, SIMULINK, SABER and the like by using circuit components such as a voltage-controlled current source, variable capacitance and the like and a custom programming module algorithm based on methods of mechanism derivation, electric equivalence, device handbook data analysis, mathematic fitting and the like. Compared with the prior art, the high-voltage IGBT module switch transient model suitable for circuit simulation, provided by the invention, can not only realize various running states of an IGBT module in circuit simulation but also simulate switch transient characteristics of voltage and current peaks, a tail current, a Miller platform, diode reverse recovery and the like of the high-voltage IGBT module. Therefore, the method has a certain promotion effect for making a research on loss analysis and a control protection policy of the high-voltage IGBT module in the field of flexible direct current transmission.
Description
Technical field
The present invention relates to Power Electronic Technique emulation field, be specifically related to a kind of high-voltage IGBT module switching transients method for establishing model suitable in circuit simulation.
Background technology
Insulated gate bipolar transistor set power MOSFET and the two-fold advantage of bipolar device, have the characteristics such as input impedance is high, high pressure resistant, it is big to bear current capacity, switching speed is fast, of increased attention and research. At current power electronic technology field, high pressure IGBT and diode constitute switch module and have been widely used in various voltage source type electric power electronics converting means, such as voltage source converter type direct current transportation (VSC-HVDC), SVC (STATCON) etc., research and modeling for its switching transients process are more and more important. Therefore, setting up accurate and practical IGBT module switching transients model, safe and reliable operation and electric property optimization to changer have important directive significance.
At present, in the Modeling Research of power electronic devices, mainly adopt mechanism model and the big class of behavior model two. Mechanism model is to utilize the Semiconductor Physics electrical behavior to carrier of gaining knowledge to carry out simplification and obtain analytical expression and then solve physical equation. Its Typical Representative has: Hefner model, KuangSheng model and Kraus model. The parameter acquiring of mechanism model for lack device physics knowledge user extremely difficult, and model contains the Semiconductor Physics equation of complexity, and computationally intensive, simulation time is long, there is the calculating problem such as convergence. The relative Simulation speed comparison of behavior model is fast, but only considers device external characteristics, and physical concept is unclear, and parameter not easily adjusts, and model commonality is relatively poor.
Therefore, adopt the methods such as illation of mechanism, electrical equivalent, curve matching, the reverse recovery characteristic of the transient characterisitics and diode that consider model accuracy and simulation velocity and IGBT influences each other, avoid solving the Semiconductor Physics equation of complexity, based on device handbook data, set up and can the high-voltage IGBT module switching transients model that be applicable to circuit simulation of the switching transients characteristic such as simulated high-pressure IGBT module Voltage and Current Spikes, tail currents, Miller platform, diode reverse recovery be particularly important.
Summary of the invention
In order to meet the needs of prior art, for the deficiency that the mechanism model described in background technology and behavior model exist, the present invention proposes a kind of high-voltage IGBT module switching transients method for establishing model suitable in circuit simulation.
A kind of high-voltage IGBT module switching transients method for establishing model suitable in circuit simulation, it is characterised in that: said method comprising the steps of:
Step 1: set up high pressure IGBT transient state equivalent model;
Step 2: set up anti-paralleled diode Reverse recovery model;
Step 3: the IGBT transient Model obtained according to step 1 and step 2 and diode reverse recovery model, both are connected according to high-voltage IGBT module circuit structure, revise and increase relevant parameter and module, thus setting up the high-voltage IGBT module switching transients model being applicable to circuit simulation.
In step 1, high pressure IGBT transient state equivalent model includes MOSFET-BJT equivalent modules, tail currents equivalent modules, parasitic capacitance equivalent modules, is specifically modeled as follows to above-mentioned three kinds of equivalent modules:
(1) MOSFET-BJT equivalent modules:
During IGBT conducting, there are two current paths inside: 1) the current path In that electron stream movable property is raw, corresponding to MOSFET structure. 2) the current path Ip that hole flow produces, corresponding to BJT structure.
When IGBT works in different conditions, flowing through MOSFET current expression is:
(1)
Employing electrical equivalent simplifies, and based on circuit simulation requirement, can obtain following relation according to the characteristic of BJT is approximate:
(2)
Thus, MOSFET-BJT equivalent modules can adopt voltage-controlled current source to simulate the on state current Ic of IGBT module, and its analytical expression is as follows:
(3)
Wherein, equivalent transconductance K=(1+ ��) Kp; VgeFor grid emitter voltage; VTThreshold voltage is turned on for IGBT; VceFor IGBT collection emitter voltage; KpFor MOSFET mutual conductance; �� is BJT current gain; ImosFor flowing through MOSFET electric current; IcFor flowing through IGBT electric current and collector current;
(2) tail currents equivalent modules:
Turning off in transient process at IGBT, owing to IGBT exists BJT, the excessive Carrier recombination in base requires time for so that cut-off current has longer hangover time.
(4)
Wherein �� is minority carrier lifetime and hangover time constant; t0For tail currents initial time; Turn off process is worked as VgeStarting hangover during less than threshold voltage, now collector current is hangover initial current Itail0. Described formula (4) is added in described formula (3), obtains MOSFET-BJT equivalent modules completely.
(3) parasitic capacitance equivalent modules:
In data book, input capacitance Cies, output capacitance CoesWith feedback capacity CresIt it is parameter conventional in application. They are as follows with the relation of interelectrode capacity:
(5)
Utilize described formula (5) in conjunction with device handbook data, obtain corresponding interpolar parasitic capacitance value, thus completing parasitic capacitance equivalent modules.
In step 2, anti-paralleled diode Reverse recovery model adopts the thinking of macro model, in conjunction with diode reverse recovery characteristic, based on device data handbook, sets up corresponding equivalent model. Described Parameters in Mathematical Model is as the formula (6).
(6)
Wherein, ��reFor Reverse recovery damping time constant; R and L freely measures, and requires and practical devices situation, desirable L=100nH according to circuit simulation, then R takes analog value according to formula (6); IrmFor Reverse recovery peak point current; DIf/ dt is reverse recovery current slope; trrFor reverse recovery time; QrrFor QRR amount, KreFor Reverse recovery proportionality coefficient.
In step 3, by two equivalent models in step 1 and 2, connect according to high-voltage IGBT module circuit structure, circuit structure module and self-defined control parameter module form complete high-voltage IGBT module switching transients precircuit.
The circuit structure module of high-voltage IGBT module, it is characterized in that, IGBT circuit structure module after encapsulation is externally drawn tri-electrodes of G, C, E and is connected with main circuit, and its internal structure is made up of each interpolar parasitic capacitance, stray resistance inductance, grid internal resistance, MOSFET-BJT equivalence voltage-controlled current source and diode reverse recovery equivalent circuit.
Gather relevant voltage current value by software module and input to model custom parameter module, accept the output control source as voltage-controlled current source of custom parameter module simultaneously, drive voltage signal is introduced, it is achieved the control to IGBT duty and each pole tension electric current by grid G. Described circuit structure module and IGBT static and dynamic c haracteristics are closely corresponding.
Custom parameter module, it is characterised in that mainly include parasitic capacitance parameter module, MOSFET-BJT equivalent current source module and diode reverse recovery equivalent current source module. This module accepts circuit structure module and switching transients Parameters in Mathematical Model, and according to described modeling method, custom programming module, output relevant parameter is to circuit structure module.
Compared with immediate prior art, the excellent effect of the present invention is:
1, for high-voltage IGBT module application scenario, based on existing scale-model investigation, adopt the methods such as illation of mechanism, electrical equivalent, curve matching, consider model accuracy and simulation velocity, it is proposed that a kind of high-voltage IGBT module switching transients method for establishing model suitable in circuit simulation.
2, the present invention is by illation of mechanism, clear physics conception, is influenced each other by the reverse recovery characteristic of the transient characterisitics of IGBT Yu diode and considers, and real result is reliable; Avoiding the physical equation of complexity, parameter substantially reduces and easily extracts, and namely can determine that according to device data handbook; Model parameter easily adjusts, it is adaptable to different IGBT and high pressure applications.
3, the present invention is possible not only to realize the various running status of IGBT module in circuit simulation, and can in switching transients characteristics such as the Voltage and Current Spikes of nanosecond simulation step length Imitating high-voltage IGBT module, tail currents, Miller platform, diode reverse recoveries.
Accompanying drawing explanation
Below in conjunction with accompanying drawing, the present invention is further described.
Fig. 1 is: a kind of high-voltage IGBT module switching transients model circuit diagram suitable in circuit simulation provided by the invention;
Fig. 2 is: in the embodiment of the present invention, (a) MOSFET-BJT equivalent modules, (b) diode reverse equivalent modules, (c) interpolar parasitic capacitance equivalent modules realize circuit diagram under PSCAD/EMTDC platform;
Fig. 3 is: be used for testing and verifying the resistance inductive load IGBT module test circuit of the diode clamp of Correctness of model in the embodiment of the present invention;
Fig. 4 is: the test circuit simulation comparison of wave shape figure built under the test circuit built under PSCAD/EMTDC platform in the embodiment of the present invention and SABER simulation software;
Fig. 5 is: the test circuit simulation waveform built under PSCAD/EMTDC platform in the embodiment of the present invention in the embodiment of the present invention and experiment measured data comparison diagram.
Detailed description of the invention
Below in conjunction with the accompanying drawing in the embodiment of the present application, the technical scheme in the embodiment of the present application is clearly and completely described, it should be emphasised that be that the description below is merely exemplary, rather than in order to limit the scope of the present invention and application thereof. .
The invention provides a kind of high-voltage IGBT module switching transients method for establishing model suitable in circuit simulation.
Fig. 1 is a kind of high-voltage IGBT module switching transients model circuit diagram suitable in circuit simulation provided by the invention. In Fig. 1, high-voltage IGBT module is by circuit structure module and custom parameter module composition.
IGBT circuit structure module after encapsulation is externally drawn tri-electrodes of G, C, E and is connected with main circuit, and its internal structure is made up of each interpolar parasitic capacitance, stray resistance inductance, grid internal resistance, MOSFET-BJT equivalence voltage-controlled current source and diode reverse recovery equivalent circuit. Gather relevant voltage current value by software module and input to model custom parameter module, accept the output control source as voltage-controlled current source of custom parameter module simultaneously, drive voltage signal is introduced, it is achieved the control to IGBT duty and each pole tension electric current by grid G. Circuit structure module and IGBT static and dynamic c haracteristics are closely corresponding.
Fig. 2 is custom parameter module, mainly includes MOSFET-BJT equivalent current source module, diode reverse recovery current source equivalent modules and parasitic capacitance parameter module. Custom parameter module accepts circuit structure module and switching transients Parameters in Mathematical Model, and according to described modeling method, custom programming module, output relevant parameter is to circuit structure module.
Fig. 2 (a) is MOSFET-BJT equivalent current source module, and wherein module input is conducting threshold voltage VT, grid emitter voltage Vge, collection emitter voltage Vce, collector current Ic, simulation time t and associated control parameters etc., and be output as the current value I of MOSFET-BJT equivalence voltage-controlled current sourcemos1. Realized according to described step 1 content custom programming by inside, the characteristic of simulation MOSFET and BJT.
Fig. 2 (b) is diode reverse recovery current source equivalent modules, and wherein module input is diode current Id, simulation time t, reverse recovery current peak Irm, the reverse recovery parameters such as reverse recovery current slope dif, and be output as the current value I of diode reverse recovery equivalent current sourcef. Realized according to described step 2 content custom programming by inside, the reverse recovery characteristic of simulating diode.
Fig. 2 (c) is interpolar parasitic capacitance module, and wherein module input is collection emitter voltage Vce, simulation time t, and module is output as input capacitance Cies, output capacitance Coes, feedback capacity Cres. Realized by device handbook capacitance characteristic curve custom programming, change into interpolar parasitic capacitance C according still further to described step 3ge��CgcAnd Cce��
The resistance perceptual load circuit of Fig. 3 diode clamp is as high-voltage IGBT module switching transients model measurement circuit. Wherein, fly-wheel diode IGBT module replaces, RGTaking 6 ��, LL for gate external resistance is that to take 50uH, RL be that load resistance takes 2.2 ��, external voltage V to inductive loadccFor 1kV.
Table 1IGBT module switch transient Model key parameter
| Parameter | Numerical value | Parameter | Numerical value |
| Rg/�� | 3.2 | R/�� | 0.65 |
| Ls/nH | 20 | L/nH | 100 |
| Rs/ m�� | 0.3 | Rf/ m�� | 11.8 |
| K /A��V-2 | 35.4 | Irm/A | 113 |
| ��/��s | 5 | ��re/��s | 0.065 |
Table 1 is the CM450DXL-34SA type 1.7kV/450A-IGBT power model produced for Mitsubishi, the key parameter of IGBT module switching transients model.
Two-way gate drive signal Ug1And Ug2IGBT1 module and the duty of IGBT2 module is controlled respectively by exporting+15V and 0V. In test circuit, Ug1Constant in 0V, namely IGBT1 is held off, and only plays fly-wheel diode effect. By controlling Ug2Output voltage+15V and 0V first turns on IGBT2 module, load inductance LL is charged, circuital current is risen to 450A, turn off IGBT2 module again and obtain cut-off current and the voltage transient waveform of IGBT2 module, load inductance is by diode continuousing flow in IGBT1 module, opening IGBT2 module again to obtain corresponding turning-on voltage current temporary state waveform and come test model stable state and transient characterisitics, the simulation waveform comparing result of PSCAD and SABER is as shown in Figure 4.
For verifying Correctness of model further, adopting IGBT model is SGH40N60, and the model of fly-wheel diode is HFA25TB60, according to respective model device handbook, extracts and revise relevant simulation parameter, and simulation waveform is with experiment measured data comparing result as shown in Figure 5.
By PSCAD simulation waveform with SABER simulation waveform and experiment measured data contrast, the high-voltage IGBT module switching transients model being applicable to circuit simulation that the present invention proposes can not only test the various duties of high pressure IGBT, and can the switching transients characteristic such as analog current due to voltage spikes, Miller platform, tail currents, diode reverse recovery current.
Finally should be noted that: described embodiment is only some embodiments of the present application, rather than whole embodiments. Based on the embodiment in the application, the every other embodiment that those of ordinary skill in the art obtain under not making creative work premise, broadly fall into the scope of the application protection.
Claims (7)
1. the high-voltage IGBT module switching transients method for establishing model being applicable to circuit simulation, it is characterised in that: said method comprising the steps of:
Step 1: set up high pressure IGBT transient state equivalent model;
Step 2: set up anti-paralleled diode Reverse recovery model;
Step 3: the IGBT transient Model obtained according to step 1 and step 2 and diode reverse recovery model, both are connected according to high-voltage IGBT module circuit structure, revise and increase relevant parameter and module, thus setting up the high-voltage IGBT module switching transients model being applicable to circuit simulation.
2. a kind of high-voltage IGBT module switching transients method for establishing model suitable in circuit simulation as claimed in claim 1, it is characterized in that, in described step 1, high pressure IGBT transient state equivalent model includes MOSFET-BJT equivalent modules, tail currents equivalent modules, parasitic capacitance equivalent modules, is specifically modeled as follows to above-mentioned three kinds of equivalent modules:
(1) MOSFET-BJT equivalent modules:
During IGBT conducting, there are two current paths inside: 1) the current path In that electron stream movable property is raw, corresponding to MOSFET structure;
2) the current path Ip that hole flow produces, corresponding to BJT structure;
When IGBT works in different conditions, flowing through MOSFET current expression is:
(1)
Employing electrical equivalent simplifies, and based on circuit simulation requirement, can obtain following relation according to the characteristic of BJT is approximate:
(2)
Thus, MOSFET-BJT equivalent modules can adopt voltage-controlled current source to simulate the on state current Ic of IGBT module, and its analytical expression is as follows:
(3)
Wherein, equivalent transconductance K=(1+ ��) Kp; VgeFor grid emitter voltage; VTThreshold voltage is turned on for IGBT; VceFor IGBT collection emitter voltage; KpFor MOSFET mutual conductance; �� is BJT current gain; ImosFor flowing through MOSFET electric current; IcFor flowing through IGBT electric current and collector current;
(2) tail currents equivalent modules:
Turning off in transient process at IGBT, owing to IGBT exists BJT, the excessive Carrier recombination in base requires time for so that cut-off current has longer hangover time;
(4)
Wherein �� is minority carrier lifetime and hangover time constant; t0For tail currents initial time; Turn off process is worked as VgeStarting hangover during less than threshold voltage, now collector current is hangover initial current Itail0;
Described formula (4) is added in described formula (3), obtains MOSFET-BJT equivalent modules completely;
(3) parasitic capacitance equivalent modules:
In data book, input capacitance Cies, output capacitance CoesWith feedback capacity CresIt it is parameter conventional in application;
They are as follows with the relation of interelectrode capacity:
(5)
Utilize described formula (5) in conjunction with device handbook data, obtain corresponding interpolar parasitic capacitance value, thus completing parasitic capacitance equivalent modules.
3. a kind of high-voltage IGBT module switching transients method for establishing model suitable in circuit simulation as claimed in claim 1, it is characterized in that, in described step 2, anti-paralleled diode Reverse recovery model adopts the thinking of macro model, in conjunction with diode reverse recovery characteristic, based on device data handbook, set up corresponding equivalent model;
Described Parameters in Mathematical Model is as the formula (6);
(6)
Wherein, ��reFor Reverse recovery damping time constant; R and L freely measures, and requires and practical devices situation, desirable L=100nH according to circuit simulation, then R takes analog value according to formula (6); IrmFor Reverse recovery peak point current; DIf/ dt is reverse recovery current slope; trrFor reverse recovery time; QrrFor QRR amount, KreFor Reverse recovery proportionality coefficient.
4. a kind of high-voltage IGBT module switching transients method for establishing model suitable in circuit simulation as claimed in claim 1, it is characterized in that, in described step 3, by two equivalent models in described step 1 and 2, connect according to high-voltage IGBT module circuit structure, circuit structure module and definition control parameter module and form complete high-voltage IGBT module switching transients precircuit.
5. the circuit structure module of high-voltage IGBT module as claimed in claim 4, it is characterized in that, IGBT circuit structure module after encapsulation is externally drawn tri-electrodes of G, C, E and is connected with main circuit, and its internal structure is made up of each interpolar parasitic capacitance, stray resistance inductance, grid internal resistance, MOSFET-BJT equivalence voltage-controlled current source and diode reverse recovery equivalent circuit.
6. high-voltage IGBT module switching transients precircuit as claimed in claim 4, it is characterized in that, gather relevant voltage current value by software module and input to model custom parameter module, accept the output control source as voltage-controlled current source of custom parameter module simultaneously, drive voltage signal is introduced, it is achieved the control to IGBT duty and each pole tension electric current by grid G;
Described circuit structure module and IGBT static and dynamic c haracteristics are closely corresponding.
7. model custom parameter module as claimed in claim 5, it is characterised in that mainly include parasitic capacitance parameter module, MOSFET-BJT equivalent current source module and diode reverse recovery equivalent current source module;
This module accepts circuit structure module and switching transients Parameters in Mathematical Model, modeling method according to claim 2, custom programming module, and output relevant parameter is to circuit structure module.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106295013A (en) * | 2016-08-12 | 2017-01-04 | 全球能源互联网研究院 | A kind of modeling method of high-voltage semi-conductor device short term failure model |
| CN106991221A (en) * | 2017-03-24 | 2017-07-28 | 清华大学 | A kind of sectional broken line model based on IGBT device transient physical process |
| CN107832561A (en) * | 2017-11-29 | 2018-03-23 | 中国南方电网有限责任公司超高压输电公司广州局 | The analysis method that a kind of HVDC transmission line influences on communication line |
| CN108763696A (en) * | 2018-05-18 | 2018-11-06 | 中国人民解放军海军工程大学 | A kind of wide base area lumped charge modeling method of high-power bipolar semiconductor |
| CN109557828A (en) * | 2018-10-31 | 2019-04-02 | 西安理工大学 | A kind of SiCMOSFET simulation circuit model parameters precision bearing calibration |
| CN111767634A (en) * | 2020-05-19 | 2020-10-13 | 中国人民解放军海军工程大学 | Method for establishing IGBT switch transient model |
| CN118627450A (en) * | 2024-08-13 | 2024-09-10 | 西北工业大学 | Power electronic converter switch transient state multiple piecewise linear modeling solving method |
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| CN106295013A (en) * | 2016-08-12 | 2017-01-04 | 全球能源互联网研究院 | A kind of modeling method of high-voltage semi-conductor device short term failure model |
| CN106295013B (en) * | 2016-08-12 | 2019-09-27 | 全球能源互联网研究院有限公司 | A kind of modeling method of high-voltage semi-conductor device short term failure model |
| CN106991221A (en) * | 2017-03-24 | 2017-07-28 | 清华大学 | A kind of sectional broken line model based on IGBT device transient physical process |
| CN106991221B (en) * | 2017-03-24 | 2020-04-24 | 清华大学 | Segmented broken line modeling method based on transient physical process of IGBT device |
| CN107832561A (en) * | 2017-11-29 | 2018-03-23 | 中国南方电网有限责任公司超高压输电公司广州局 | The analysis method that a kind of HVDC transmission line influences on communication line |
| CN108763696A (en) * | 2018-05-18 | 2018-11-06 | 中国人民解放军海军工程大学 | A kind of wide base area lumped charge modeling method of high-power bipolar semiconductor |
| CN108763696B (en) * | 2018-05-18 | 2022-04-22 | 中国人民解放军海军工程大学 | Large-power bipolar semiconductor device wide-base-area lumped charge modeling method |
| CN109557828A (en) * | 2018-10-31 | 2019-04-02 | 西安理工大学 | A kind of SiCMOSFET simulation circuit model parameters precision bearing calibration |
| CN109557828B (en) * | 2018-10-31 | 2022-03-25 | 西安理工大学 | SiCMOS MOSFET simulation circuit model parameter precision correction method |
| CN111767634A (en) * | 2020-05-19 | 2020-10-13 | 中国人民解放军海军工程大学 | Method for establishing IGBT switch transient model |
| CN111767634B (en) * | 2020-05-19 | 2022-09-27 | 中国人民解放军海军工程大学 | Method for establishing IGBT switch transient model |
| CN118627450A (en) * | 2024-08-13 | 2024-09-10 | 西北工业大学 | Power electronic converter switch transient state multiple piecewise linear modeling solving method |
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