CN103105571A - Simulated measurement method of current characteristics of insulated gate bipolar transistor - Google Patents
Simulated measurement method of current characteristics of insulated gate bipolar transistor Download PDFInfo
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Abstract
The invention discloses a simulated measurement method of current characteristics of an insulated gate bipolar transistor. The simulated measurement method of the current characteristics of the insulated gate bipolar transistor includes the following steps of: step 10, obtaining test conduction characteristic and output characteristic of the insulated gate bipolar transistor, step 20, establishing a simulated circuit of an internal integrated model of an simulated program, step 30, establishing a corresponding relationship between an actual collector voltage and a corrected collector voltage, step 40, obtaining correction factors of the actual collector voltage and the corrected collector voltage, step 50, stimulatingly establishing a first-time corrected actual conduction characteristic, step 60, establishing a corresponding relationship between an actual grid voltage and a corrected grid voltage, step 70, obtaining correction factors of the actual grid voltage and the corrected grid voltage, and step 80, stimulatingly establishing a second-time corrected actual output characteristic. The simulated measurement method of the current characteristics of the insulated gate bipolar transistor solves the problem that current characteristics of insulated gate bipolar transistor integrated inside of a simulation program with intergraded circuit emphasis (PSPICE) are low in degree of accuracy.
Description
Technical field
The present invention relates to the emulation field of high-voltage power semiconductor devices, specifically, relate to a kind of in paying attention to integrated circuit simulating program PSPICE, the current measuring method of high voltage power device insulated gate bipolar transistor.
Background technology
Along with the development of electron electric power technology, the basic electronic devices and components that power semiconductor device is controlled and transformed as energy in the electron electric power system obtain using more and more widely.The insulated gate bipolar device (insulated gate bipolar transistor) that occur the eighties in last century integrates large current handling capability and isolated-gate field effect transistor (IGFET) (MOSFET) the grid voltage control characteristic of high-voltage three-pole pipe (BJT), have that input impedance is high, switching speed is fast, driving power is little, the advantages such as the large and conduction impedance of current driving ability is low, be the power semiconductor device of near ideal, have development and application prospect widely.
The integrated circuit device model is the bridge that connects practical devices and circuit simulation.Integrated circuit is based upon on the working mechanism and physical details of basic components and parts (as transistor, insulated gate bipolar transistor, resistance, electric capacity etc.) with the SPICE model of device, can be used for the SPICE emulator, accurate Static and dynamic operating characteristic at circuit level, device level analogue system emulation device, the logic function of verification system is carried out system-level signal integrity analysis.Therefore, the SPICE model is widely used in integrated circuit (IC) design.
Paying attention to integrated circuit simulating program PSPICE is integrated circuit SPICE(Simulation Program with Integrated Circuit Emphasis) a kind of in simulation software, be mainly used in the computer-aided design (CAD) of large scale integrated circuit.Pay attention to integrated circuit simulating program PSPICE and have powerful circuit diagram and draw function, breadboardin copying, symplectic algorithm function and components and parts symbol making function, comprising supporting AA(Advanced Analysis) the patterned insulated gate bipolar transistor model analyzed.The model parameter of paying attention to can extracting the insulated gate bipolar transistor model current characteristics aspect in integrated circuit simulating program PSPICE mainly contains V parameter TO, parameter K P, parameters R D, parameters R S, but this can not simulate the characteristic of actual insulation grid bipolar transistor device very accurately, therefore, for the electrology characteristic of accurate simulation circuit and insulated gate bipolar transistor, need to revise the insulated gate bipolar transistor model of paying attention in integrated circuit simulating program PSPICE.The present invention has introduced on a kind of basis paying attention to the inner integrated insulated gate bipolar transistor model of integrated circuit simulating program PSPICE and has carried out Innovative method, the model of the insulated gate bipolar transistor after improvement with pay attention to integrated circuit simulating program PSPICE in original insulated gate bipolar transistor model compare, the precision of on state characteristic and output characteristics is significantly improved.
Summary of the invention
Technical matters: the current characteristics assay method that the invention provides a kind of insulated gate bipolar transistor based on emulation, the method is simply effective, can solve the inner integrated insulated gate bipolar transistor artificial actual on state characteristic of integrated circuit simulating program PSPICE, the not high problem of actual output characteristics precision paid attention to.
Technical scheme: in order to solve the problems of the technologies described above, the present invention adopts following technical scheme:
Step:
Step 10) is obtained test conduction characteristic and the test output characteristics of insulated gate bipolar transistor from the instructions of insulated gate bipolar transistor,
Step 20) grid and the collector that will pay attention to the inner integrated insulated gate bipolar transistor model of integrated circuit simulating program PSPICE connect respectively direct supply, the output voltage of the output voltage of direct supply that grid connects and direct supply that collector connects equals respectively grid voltage and the collector voltage in the test conduction characteristic, set up the artificial circuit of paying attention to the inner integrated insulated gate bipolar transistor model of integrated circuit simulating program PSPICE
Step 201) respectively from pay attention to the inner integrated insulated gate bipolar transistor model of integrated circuit simulating program PSPICE, obtain the initial value of V parameter TO, parameter K P, parameters R D and the parameters R S of insulated gate bipolar transistor model,
Step 202) the actual on state characteristic that integrated circuit simulating program PSPICE emulation obtains the insulated gate bipolar transistor under the instructions test condition is paid attention in utilization,
Step 203) if the error between the actual on state characteristic of test conduction characteristic and emulation less than thresholding 40%, enters step 30), otherwise, enter step 204),
Step 204) make VTO value=VTO value+0.01V, KP value=KP value+0.01cm
2/ vs, RD value=RD value+0.01 Ω, RS value=RS value+0.01 Ω, and return to step 202),
Step 30) set up the corresponding relation of actual collector voltage and trim set electrode voltage,
Step 301) for the test conduction characteristic, actual collector voltage every 0.5V, is searched the measuring current value in the test conduction characteristic under corresponding collector voltage from 0V,
Step 302) for actual on state characteristic, according to step 301) the measuring current value that finds, find the corresponding collector voltage of described measuring current value in actual on state characteristic, deduct corresponding actual collector voltage with a described collector voltage and obtain the secondary collector voltage, described secondary collector voltage is designated as the trim set electrode voltage, set up the corresponding relation of actual collector voltage and trim set electrode voltage
Step 40) according to step 302) the actual collector voltage set up and the corresponding relation of trim set electrode voltage, utilize the fitting of a polynomial function polyfit in the MATLAB simulation software, input 3 parameters, be respectively actual collector voltage, trim set electrode voltage, exponent number 3, computing obtains 4 trim set electrode voltage coefficients
Step 50) the actual on state characteristic of the insulated gate bipolar transistor of once revising is set up in emulation,
step 501) utilize the inner integrated Voltage-controlled Current Source of emphasis integrated circuit simulating program PSPICE, this Voltage-controlled Current Source is designated as the first Voltage-controlled Current Source, direct supply that collector connects is removed from the collector of insulated gate bipolar transistor model, and the output terminal of the direct supply that collector connects removed is connected to the electrode input end of the first Voltage-controlled Current Source and the cathode output end of the first Voltage-controlled Current Source, again the cathode output end of the first Voltage-controlled Current Source is connected to the collector of insulated gate bipolar transistor model, the artificial circuit of the insulated gate bipolar transistor model that obtains once revising,
Step 502) in paying attention to integrated circuit simulating program PSPICE, open the attribute of the first Voltage-controlled Current Source, insert step 40 on coefficient one hurdle) 4 trim set electrode voltage coefficients obtaining, the actual on state characteristic of the insulated gate bipolar transistor that emulation obtains once revising
Step 60) set up actual gate voltage and the corresponding relation of revising grid voltage,
Step 601) for the described test output characteristics of step 10), find successively device detection saturation current corresponding under each grid voltage,
Step 602) according to step 501) artificial circuit of the insulated gate bipolar transistor model of once revising set up, emulation obtains the actual transfer characteristic of insulated gate bipolar transistor,
Step 603) according to step 601) search the test saturation current that obtains, in step 602) search the corresponding grid voltage of described test saturation current in the actual transfer family curve that obtains of emulation, deduct corresponding actual gate voltage with a described grid voltage and obtain the secondary grid voltage, described secondary grid voltage note is done the correction grid voltage, set up the corresponding relation between actual gate voltage and correction grid voltage
Step 70) according to step 603) the actual gate voltage of setting up and the corresponding relation of revising grid voltage, utilize the fitting of a polynomial function polyfit in the MATLAB simulation software, input 3 parameters, be respectively actual gate voltage, revise grid voltage, exponent number 3, computing obtains 4 and revises the grid voltage coefficient
Step 80) the actual output characteristics of the insulated gate bipolar transistor of second-order correction is set up in emulation,
step 801) utilize the inner integrated Voltage-controlled Current Source of emphasis integrated circuit simulating program PSPICE, this Voltage-controlled Current Source is designated as second voltage and controls voltage source, according to step 501) artificial circuit of the insulated gate bipolar transistor model of once revising that obtains, direct supply that grid connects is removed from the grid of insulated gate bipolar transistor model, and the output terminal of the direct supply that grid connects removed is connected to second voltage controls the electrode input end of voltage source and the cathode output end that second voltage is controlled voltage source, the cathode output end of again second voltage being controlled voltage source is connected to the grid of insulated gate bipolar transistor model, obtain the artificial circuit of the insulated gate bipolar transistor model of second-order correction,
Step 802) in paying attention to integrated circuit simulating program PSPICE, open second voltage and control the attribute of voltage source, insert step 70 on coefficient one hurdle) obtain 4 revise the grid voltage coefficients, emulation obtains the actual output characteristics of the insulated gate bipolar transistor of second-order correction.
Compared with prior art, the present invention has following advantage:
(1), the present invention is based on and pay attention to the inner integrated insulated gate bipolar transistor model of integrated circuit simulating program PSPICE, and add on the basis of the integrated insulated gate bipolar transistor model in inside and pay attention to the first inner integrated Voltage-controlled Current Source of integrated circuit simulating program PSPICE, second voltage is controlled voltage source, revise the first Voltage-controlled Current Source, second voltage is controlled the attribute of voltage source, respectively collector voltage and grid voltage are revised, after revising, the current characteristics precision of insulated gate bipolar transistor is greatly improved, the saturation region current precision improves more than 20%.The artificial circuit figure of the insulated gate bipolar transistor model of second-order correction is referring to accompanying drawing 4.Fig. 5 has shown respectively the actual on state characteristic of paying attention to the inner integrated insulated gate bipolar transistor model of integrated circuit simulating program PSPICE, the actual on state characteristic that the artificial circuit emulation of the insulated gate bipolar transistor model of second-order correction obtains, the test conduction characteristic, the test conduction characteristic is the instructions of the insulated gate bipolar transistor of 5SNA0600G650100 based on the model of ABB AB, as can be seen from the figure, the collector current of paying attention to the inner integrated insulated gate bipolar transistor model of integrated circuit simulating program PSPICE is along with the rising of collector voltage is almost linear variation, regulate parameter K P, parameters R D, the value of parameters R S can only change the slope of rising, the error ratio of paying attention to the inner integrated insulated gate bipolar transistor model of integrated circuit simulating program PSPICE is larger, and increase by the first Voltage-controlled Current Source, second voltage is controlled match test conduction feature set electrode current that the insulated gate bipolar transistor model of voltage source can be more accurate along with the increase of collector voltage this more and more faster characteristic that rises.Fig. 6, Fig. 7, Fig. 8 has shown respectively the actual output characteristics of paying attention to the inner integrated insulated gate bipolar transistor model of integrated circuit simulating program PSPICE, the actual output characteristics that the artificial circuit emulation of the insulated gate bipolar transistor model of second-order correction obtains, the test output characteristics, as can be seen from the figure, pay attention to the inner integrated insulated gate bipolar transistor model of integrated circuit simulating program PSPICE and be respectively 9V at grid voltage, 11V, actual saturation current during 13V is difficult to the test saturation current under the corresponding condition of overall fit, when actual gate voltage is 13V, the actual saturation current of paying attention to the artificial circuit emulation of the inner integrated insulated gate bipolar transistor model of integrated circuit simulating program PSPICE is 1161A, the test saturation current is 1110A, when actual gate voltage was 11V, the actual saturation current of paying attention to the artificial circuit emulation of the inner integrated insulated gate bipolar transistor model of integrated circuit simulating program PSPICE was 621A, and the test saturation current is 360A, when actual gate voltage was 9V, the actual saturation current of paying attention to the artificial circuit emulation of the inner integrated insulated gate bipolar transistor model of integrated circuit simulating program PSPICE was 136A, and the test saturation current is 60A.And the insulated gate bipolar transistor model that increases the first Voltage-controlled Current Source, second voltage control voltage source has carried out correction in various degree to each actual gate voltage, when actual gate voltage was 13V, the actual saturation current that the artificial circuit emulation of the insulated gate bipolar transistor model of second-order correction obtains was 1103A; When actual gate voltage was 11V, the actual saturation current that the artificial circuit emulation of the insulated gate bipolar transistor model of second-order correction obtains was 358A; When actual gate voltage was 9V, the actual saturation current that the artificial circuit emulation of the insulated gate bipolar transistor model of second-order correction obtains was 51A, and test saturation current result is more approaching.
(2), this modification method has versatility, the insulated gate bipolar transistor of different model has different test conduction characteristics, the test output characteristics, can obtain the first different separately Voltage-controlled Current Source by described modification method, second voltage is controlled the coefficient of voltage source, and realization is for the match of the current characteristics of the insulated gate bipolar transistor of different model.
(3), pay attention to the inner integrated insulated gate bipolar transistor model of integrated circuit simulating program PSPICE and increasing by the first Voltage-controlled Current Source, after second voltage is controlled voltage source, still can support AA to analyze.
Description of drawings
Fig. 1 is process flow diagram of the present invention.
Fig. 2 is for paying attention to the artificial circuit figure of the inner integrated insulated gate bipolar transistor model of integrated circuit simulating program PSPICE.
Fig. 3 is for increasing the first Voltage-controlled Current Source E1, the artificial circuit figure of the insulated gate bipolar transistor model that obtains once revising.
Fig. 4 is that the present invention increases by the first Voltage-controlled Current Source E1, and second voltage is controlled voltage source E2, obtains the artificial circuit figure of the insulated gate bipolar transistor model of second-order correction.
Actual on state characteristic, test conduction characteristic that the artificial circuit emulation of the actual on state characteristic that Fig. 5 obtains for the inner integrated insulated gate bipolar transistor model emulation of emphasis integrated circuit simulating program PSPICE, the insulated gate bipolar transistor model of second-order correction obtains.
Fig. 6 for pay attention to that the inner integrated insulated gate bipolar transistor model emulation of integrated circuit simulating program PSPICE obtains actual output characteristics.
Fig. 7 is the actual output characteristics that the artificial circuit emulation of the insulated gate bipolar transistor model of second-order correction obtains.
Fig. 8 is the test output characteristics.
Embodiment
Further illustrate technical scheme of the present invention below in conjunction with accompanying drawing.
As shown in Figure 1, the current characteristics assay method of a kind of insulated gate bipolar transistor based on emulation of the present invention comprises the following steps:
Step 10) is the instructions of insulated gate bipolar transistor of 5SNA0600G650100 from the model of ABB AB, obtains test conduction characteristic and the test output characteristics of insulated gate bipolar transistor,
Step 20) in paying attention to integrated circuit simulating program PSPICE, call the integrated insulated gate bipolar transistor model of software inhouse, set up artificial circuit as shown in Figure 2, grid and the collector of paying attention to the inner integrated insulated gate bipolar transistor model of integrated circuit simulating program PSPICE are connect respectively direct supply, load the fixed voltage of V1=15V at grid, be 0-6V at the collector loading range, step-length is the voltage V2 of 0.1V
Step 201) respectively from pay attention to the inner integrated insulated gate bipolar transistor model of integrated circuit simulating program PSPICE, the initial value that obtains the V parameter TO of insulated gate bipolar transistor model is that the initial value of 4.2V, parameter K P is 0.34cm
2The initial value of/vs, parameters R D is that the initial value of 0.03 Ω, parameters R S is 0.02 Ω,
Step 202) the actual on state characteristic that integrated circuit simulating program PSPICE emulation obtains insulated gate bipolar transistor is paid attention in utilization,
Step 203) the actual on state characteristic of emulation and the error between the test conduction characteristic be greater than thresholding 40%,
Step 204) make VTO value=VTO value+0.01V, KP value=KP value+0.01cm
2/ vs, RD value=RD value+0.01 Ω, RS value=RS value+0.01 Ω, and return to step 202), emulation obtains the actual on state characteristic of insulated gate bipolar transistor again, through circulation, finally obtains V parameter TO value and is 7.4V, and parameter K P value is 0.85cm
2/ vs, parameters R D value is 0.08 Ω, parameters R S value is 0.02 Ω,
Step 30) set up the corresponding relation of actual collector voltage and trim set electrode voltage,
step 301) for the test conduction characteristic, actual collector voltage is from 0V, every 0.5V, search the measuring current value in the test conduction characteristic under corresponding collector voltage, when obtaining actual collector voltage and being 0V, measuring current is 0A, when actual collector voltage is 0.5V, measuring current is 0.0003A, when actual collector voltage is 1.0V, measuring current is 1A, when actual collector voltage is 1.5V, measuring current is 30A, when actual collector voltage is 2.0V, measuring current is 55A, when actual collector voltage is 2.5V, measuring current is 125A, when actual collector voltage is 3.0V, measuring current is 240A, when actual collector voltage is 3.5V, measuring current is 380A, when actual collector voltage is 4.0V, measuring current is 535A, when actual collector voltage is 4.5V, measuring current is 710A, when actual collector voltage is 5.0V, measuring current is 900A, when actual collector voltage is 5.5V, measuring current is 1100A, when actual collector voltage is 6.0V, measuring current is 1340A,
step 302) for actual on state characteristic, according to step 301) the measuring current value that finds, find corresponding the first collector voltage of described measuring current value in actual on state characteristic, deduct corresponding actual collector voltage with a described collector voltage and obtain the secondary collector voltage, described secondary collector voltage is designated as the trim set electrode voltage, set up the corresponding relation of actual collector voltage and trim set electrode voltage, when obtaining actual collector voltage and being 0V, the trim set electrode voltage is 0V, when actual collector voltage is 0.5V, the trim set electrode voltage is 0V, when actual collector voltage is 1.0V, the trim set electrode voltage is-0.03V, when actual collector voltage is 1.5V, the trim set electrode voltage is-0.05V, when actual collector voltage is 2.0V, the trim set electrode voltage is-0.15V, when actual collector voltage is 2.5V, the trim set electrode voltage is-0.05V, when actual collector voltage is 3.0V, the trim set electrode voltage is 0.44V, when actual collector voltage is 3.5V, the trim set electrode voltage is 1.15V, when actual collector voltage is 4.0V, the trim set electrode voltage is 2.05V, when actual collector voltage is 4.5V, the trim set electrode voltage is 3V, when actual collector voltage is 5.0V, the trim set electrode voltage is 4.1V, when actual collector voltage is 5.5V, the trim set electrode voltage is 5.35V, when actual collector voltage is 6.0V, the trim set electrode voltage is 6.2V,
Step 40) according to step 302) the actual collector voltage set up and the corresponding relation of trim set electrode voltage, utilize the fitting of a polynomial function polyfit in the MATLAB simulation software, input 3 parameters, be respectively actual collector voltage, trim set electrode voltage, exponent number 3, computing obtains 4 trim set electrode voltage coefficients, be respectively 0,0.6891 ,-0.1113,0.0612
Step 50) the actual on state characteristic of the insulated gate bipolar transistor of once revising is set up in emulation,
step 501) utilize the inner integrated Voltage-controlled Current Source of emphasis integrated circuit simulating program PSPICE, as shown in Figure 3, increase by the first Voltage-controlled Current Source E1 on the basis of Fig. 2, direct supply that collector connects is removed from the collector of insulated gate bipolar transistor model, and the output terminal of the direct supply that collector connects removed is connected to the electrode input end of the first Voltage-controlled Current Source E1 and the cathode output end of the first Voltage-controlled Current Source, again the cathode output end of the first Voltage-controlled Current Source E1 is connected to the collector of insulated gate bipolar transistor model, the artificial circuit of the insulated gate bipolar transistor model that obtains once revising,
Step 502) in paying attention to integrated circuit simulating program PSPICE, open the attribute of the first Voltage-controlled Current Source E1, insert step 40 on coefficient one hurdle) 4 trim set electrode voltage coefficients obtaining, the actual on state characteristic of the insulated gate bipolar transistor that emulation obtains once revising
Step 60) set up actual gate voltage and the corresponding relation of revising grid voltage,
Step 601) for the described test output characteristics of step 10), find successively device detection saturation current corresponding under each grid voltage, when obtaining actual gate voltage and being 9V, the test saturation current is 60A, when actual gate voltage was 11V, the test saturation current was 360A, when actual gate voltage is 13V, the test saturation current is 1110A
Step 602) according to step 501) artificial circuit of the insulated gate bipolar transistor model of once revising set up, emulation obtains the actual transfer characteristic of insulated gate bipolar transistor, the collector of insulated gate bipolar transistor loads fixing voltage V2=20V, the grid loading range is 0-15V, step-length is the voltage V1 of 0.1V
step 603) according to step 601) search the test saturation current that obtains, in step 602) search the corresponding grid voltage of described test saturation current in the actual transfer family curve that obtains of emulation, deduct corresponding actual gate voltage with a described grid voltage and obtain the secondary grid voltage, described secondary grid voltage note is done the correction grid voltage, set up the corresponding relation between actual gate voltage and correction grid voltage, when obtaining actual gate voltage and being 9V, revising grid voltage is-1.2V, when actual gate voltage is 11V, revising grid voltage is-2.7V, when actual gate voltage is 13V, revising grid voltage is-0.2V,
Step 70) according to step 603) the actual gate voltage of setting up and the corresponding relation of revising grid voltage, utilize the fitting of a polynomial function polyfit in the MATLAB simulation software, input 3 parameters, be respectively actual gate voltage, revise grid voltage, exponent number 3, computing obtains 4 correction grid voltage coefficients and is respectively 0,2.7693 ,-0.3805,0.0187
Step 80) the actual output characteristics of the insulated gate bipolar transistor of second-order correction is set up in emulation,
step 801) utilize the inner integrated Voltage-controlled Current Source of emphasis integrated circuit simulating program PSPICE, as shown in Figure 4, increase second voltage and control voltage source E2 on the basis of Fig. 3, according to step 501) artificial circuit of the insulated gate bipolar transistor model of once revising that obtains, direct supply that grid connects is removed from the grid of insulated gate bipolar transistor model, and the output terminal of the direct supply that grid connects removed is connected to second voltage controls the electrode input end of voltage source E2 and the cathode output end that second voltage is controlled voltage source E2, the cathode output end of again second voltage being controlled voltage source E2 is connected to the grid of insulated gate bipolar transistor model, obtain the artificial circuit of the insulated gate bipolar transistor model of second-order correction, input end loading range at E2 is 9-13V, step-length is the voltage V1 of 2V, input end loading range at E1 is 0-6V simultaneously, step-length is the voltage V2 of 0.1V,
Step 802) in paying attention to integrated circuit simulating program PSPICE, open second voltage and control the attribute of voltage source, insert step 70 on coefficient one hurdle) obtain 4 revise the grid voltage coefficients, emulation obtains the actual output characteristics of the insulated gate bipolar transistor of second-order correction.
Claims (1)
1. current characteristics assay method based on the insulated gate bipolar transistor of emulation, it is characterized in that: the method comprises the following steps:
step 10) is from the instructions of insulated gate bipolar transistor, obtain test conduction characteristic and the test output characteristics of insulated gate bipolar transistor, the grid that described test conduction characteristic is insulated gate bipolar transistor connects fixed voltage, added this fixed voltage is greater than the threshold voltage of device, scan from low to high the relation curve of the corresponding collector current of one group of collector voltage that collector voltage obtains, the grid voltage that described test output characteristics is insulated gate bipolar transistor from lower than threshold voltage variation to the process higher than threshold voltage, under each grid voltage of correspondence, scan from low to high the relation curve of the corresponding collector current of one group of collector voltage that collector voltage obtains,
Step 20) grid and the collector that will pay attention to the inner integrated insulated gate bipolar transistor model of integrated circuit simulating program PSPICE connect respectively direct supply, the output voltage of the output voltage of direct supply that grid connects and direct supply that collector connects equals respectively grid voltage and the collector voltage in the test conduction characteristic, set up the artificial circuit of paying attention to the inner integrated insulated gate bipolar transistor model of integrated circuit simulating program PSPICE
Step 201) respectively from pay attention to the inner integrated insulated gate bipolar transistor model of integrated circuit simulating program PSPICE, obtain the initial value of V parameter TO, parameter K P, parameters R D and the parameters R S of insulated gate bipolar transistor model,
Step 202) the actual on state characteristic that integrated circuit simulating program PSPICE emulation obtains the insulated gate bipolar transistor under the instructions test condition is paid attention in utilization,
Step 203) if the error between the actual on state characteristic of test conduction characteristic and emulation less than thresholding 40%, enters step 30), otherwise, enter step 204),
Step 204) make VTO value=VTO value+0.01V, KP value=KP value+0.01cm
2/ vs, RD value=RD value+0.01 Ω, RS value=RS value+0.01 Ω, wherein, V is the unit of V parameter TO, cm
2/ vs is the unit of parameter K P, and Ω is the unit of parameters R D and parameters R S, and returns to step 202),
Step 30) set up the corresponding relation of actual collector voltage and trim set electrode voltage,
Step 301) for the test conduction characteristic, actual collector voltage every 0.5V, is searched the measuring current value in the test conduction characteristic under corresponding collector voltage from 0V,
Step 302) for actual on state characteristic, according to step 301) the measuring current value that finds, find the corresponding collector voltage of described measuring current value in actual on state characteristic, deduct corresponding actual collector voltage with a described collector voltage and obtain the secondary collector voltage, described secondary collector voltage is designated as the trim set electrode voltage, set up the corresponding relation of actual collector voltage and trim set electrode voltage
Step 40) according to step 302) the actual collector voltage set up and the corresponding relation of trim set electrode voltage, utilize the fitting of a polynomial function polyfit in the MATLAB simulation software, input 3 parameters, be respectively actual collector voltage, trim set electrode voltage, exponent number 3, computing obtains 4 trim set electrode voltage coefficients
Step 50) the actual on state characteristic of the insulated gate bipolar transistor of once revising is set up in emulation,
step 501) utilize the inner integrated Voltage-controlled Current Source of emphasis integrated circuit simulating program PSPICE, this Voltage-controlled Current Source is designated as the first Voltage-controlled Current Source, direct supply that collector connects is removed from the collector of insulated gate bipolar transistor model, and the output terminal of the direct supply that collector connects removed is connected to the electrode input end of the first Voltage-controlled Current Source and the cathode output end of the first Voltage-controlled Current Source, again the cathode output end of the first Voltage-controlled Current Source is connected to the collector of insulated gate bipolar transistor model, the artificial circuit of the insulated gate bipolar transistor model that obtains once revising,
Step 502) in paying attention to integrated circuit simulating program PSPICE, open the attribute of the first Voltage-controlled Current Source, insert step 40 on coefficient one hurdle) 4 trim set electrode voltage coefficients obtaining, the actual on state characteristic of the insulated gate bipolar transistor that emulation obtains once revising
Step 60) set up actual gate voltage and the corresponding relation of revising grid voltage,
Step 601) for the described test output characteristics of step 10), find successively device detection saturation current corresponding under each grid voltage,
Step 602) according to step 501) artificial circuit of the insulated gate bipolar transistor model of once revising set up, emulation obtains the actual transfer characteristic of insulated gate bipolar transistor, the collector that described actual transfer characteristic is insulated gate bipolar transistor connects fixing voltage, the relation curve of the corresponding collector current of the grid voltage that obtains of raster pole tension from low to high
Step 603) according to step 601) search the test saturation current that obtains, in step 602) search the corresponding grid voltage of described test saturation current in the actual transfer family curve that obtains of emulation, deduct corresponding actual gate voltage with a described grid voltage and obtain the secondary grid voltage, described secondary grid voltage note is done the correction grid voltage, set up the corresponding relation between actual gate voltage and correction grid voltage
Step 70) according to step 603) the actual gate voltage of setting up and the corresponding relation of revising grid voltage, utilize the fitting of a polynomial function polyfit in the MATLAB simulation software, input 3 parameters, be respectively actual gate voltage, revise grid voltage, exponent number 3, computing obtains 4 and revises the grid voltage coefficient
Step 80) the actual output characteristics of the insulated gate bipolar transistor of second-order correction is set up in emulation,
step 801) utilize the inner integrated Voltage-controlled Current Source of emphasis integrated circuit simulating program PSPICE, this Voltage-controlled Current Source is designated as second voltage and controls voltage source, according to step 501) artificial circuit of the insulated gate bipolar transistor model of once revising that obtains, direct supply that grid connects is removed from the grid of insulated gate bipolar transistor model, and the output terminal of the direct supply that grid connects removed is connected to second voltage controls the electrode input end of voltage source and the cathode output end that second voltage is controlled voltage source, the cathode output end of again second voltage being controlled voltage source is connected to the grid of insulated gate bipolar transistor model, obtain the artificial circuit of the insulated gate bipolar transistor model of second-order correction,
Step 802) in paying attention to integrated circuit simulating program PSPICE, open second voltage and control the attribute of voltage source, insert step 70 on coefficient one hurdle) obtain 4 revise the grid voltage coefficients, emulation obtains the actual output characteristics of the insulated gate bipolar transistor after second-order correction.
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| CN104020404B (en) * | 2013-08-26 | 2017-05-10 | 北京航空航天大学 | Construction method for optical coupler low-frequency noise equivalent circuit comprising internal defect |
| CN103792478B (en) * | 2014-02-24 | 2016-03-23 | 东南大学 | A kind of emulation mode of insulated gate bipolar transistor DC characteristic |
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| CN108732480B (en) * | 2018-05-24 | 2020-07-10 | 江苏矽导集成科技有限公司 | Automatic sorting circuit and automatic sorting method based on parallel use of SiC MOSFET devices |
| CN110703064A (en) * | 2018-06-25 | 2020-01-17 | 南亚科技股份有限公司 | Device and method for analyzing at least one transistor |
| CN110703064B (en) * | 2018-06-25 | 2022-02-22 | 南亚科技股份有限公司 | Device and method for analyzing at least one transistor |
| CN109917266A (en) * | 2019-04-16 | 2019-06-21 | 南方电网科学研究院有限责任公司 | Method, device and equipment for testing insulated bipolar transistor chip |
| CN112560381A (en) * | 2020-12-14 | 2021-03-26 | 厦门市三安集成电路有限公司 | Gallium nitride-based high electron mobility transistor simulation method and device and storage medium |
| CN114062896A (en) * | 2021-11-11 | 2022-02-18 | 深圳市慧邦电子科技有限公司 | Finished product testing method of integrated circuit and storage medium |
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