CN109840357A - Transistor modular fatigue life determines method, apparatus and computer equipment - Google Patents
Transistor modular fatigue life determines method, apparatus and computer equipment Download PDFInfo
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- CN109840357A CN109840357A CN201910015983.9A CN201910015983A CN109840357A CN 109840357 A CN109840357 A CN 109840357A CN 201910015983 A CN201910015983 A CN 201910015983A CN 109840357 A CN109840357 A CN 109840357A
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Abstract
This application involves a kind of transistor modular fatigue lives to determine method, apparatus, computer equipment and storage medium.The described method includes: obtaining the saturation voltage drop of transistor modular；Inquiry transistor modular corresponds to preset fatigue life prediction model, and fatigue life prediction model is obtained according to fitting fatigue life of the transistor modular under different loads；Saturation voltage drop is inputted in fatigue life prediction model, the fatigue life of transistor modular is obtained.The fatigue life of transistor modular can be accurately determined using this method.
Description
Technical field
This application involves technical field of semiconductors, determine method, dress more particularly to a kind of transistor modular fatigue life
It sets, computer equipment and storage medium.
Background technique
Insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) is that one kind has
The device for power switching for the plurality of advantages such as current carrying density is big, saturation voltage drop is low is the core devices of energy transformation and transmission, in-orbit
The fields applications such as road traffic, smart grid, aerospace, electric car and new energy equipment are extremely wide.But along with IGBT mould
The raising of the power grade of block, power density and switching frequency, the loss and internal junction temperature that the power cycle of IGBT generates
Continued jitters easily cause the fatigue damage of power device.By predicting IGBT module remaining life, inspection can be formulated
Strategy is repaired, the generation of equipment fault can be effectively avoided.
Currently, traditional analytic method based on empirical data statistics, data volume needed for parsing is big, the standard of fatigue life prediction
True property is low.
Summary of the invention
Based on this, it is necessary to which in view of the above technical problems, transistor modular fatigue life can accurately be determined by providing one kind
Transistor modular fatigue life determine method, apparatus, computer equipment and storage medium.
A kind of transistor modular fatigue life determines method, which comprises
Obtain the saturation voltage drop of transistor modular；
Inquiry transistor modular corresponds to preset fatigue life prediction model, and fatigue life prediction model is according to crystal pipe die
Fitting fatigue life of the block under different loads obtains；
Saturation voltage drop is inputted in fatigue life prediction model, the fatigue life of transistor modular is obtained.
In one of the embodiments, before inquiry transistor modular corresponds to preset fatigue life prediction model, also
Include:
Apply different load to transistor modular, obtains transistor modular corresponding stress under different load
Strain Distribution；
The stress-strain state of transistor modular is determined according to Stress distribution；
According to stress-strain state, the corresponding ess-strain curve of fatigue of transistor modular is inquired, transistor modular is obtained
Fitting fatigue life；
According to each fitting fatigue life, fatigue life prediction model is obtained.
Apply different load to transistor modular in one of the embodiments, obtains transistor modular different
Corresponding Stress distribution includes: under load
According to the geometric parameter of transistor modular, the finite element model of transistor modular is constructed；
Apply different load to transistor modular, is coupled and calculated by electrothermal structure, determine transistor modular in difference
Load under corresponding Stress distribution.
The stress-strain state for determining transistor modular according to Stress distribution in one of the embodiments, includes:
Determine the yield strength of transistor modular；
When the maximum stress for according to Stress distribution, determining transistor modular is greater than yield strength, transistor is determined
Module is in strain fatigue state；Otherwise, it determines transistor modular is in stress fatigue state.
The ess-strain curve of fatigue includes strain fatigue curve and stress fatigue curve in one of the embodiments,；Root
According to stress-strain state, the corresponding ess-strain curve of fatigue of transistor modular is inquired, obtains the fitting fatigue of transistor modular
Service life includes:
When transistor modular is in strain fatigue state, strain fatigue curve is inquired, and according to strain fatigue curve, really
Determine the fitting strain fatigue life of transistor modular, fitting fatigue life includes fitting strain fatigue life；
When transistor modular is in stress fatigue state, stress fatigue curve is inquired, and according to stress fatigue curve, really
Determine the fitting stress fatigue service life of transistor modular, fitting fatigue life includes the fitting stress fatigue service life.
In one of the embodiments, according to stress-strain state, it is tired to inquire the corresponding ess-strain of transistor modular
Labor curve, before the fitting fatigue life for obtaining transistor modular, further includes:
Fatigue life test is carried out to transistor modular, obtains the corresponding test curve of fatigue of transistor modular；
According to preset process conditions, the test curve of fatigue is adjusted, the ess-strain curve of fatigue is obtained.
In one of the embodiments, according to each fitting fatigue life, obtaining fatigue life prediction model includes:
According to each load, the corresponding saturation voltage drop of transistor modular is determined；
According to the corresponding relationship between the saturation voltage drop of transistor modular, with each fitting fatigue life, fatigue life is obtained
Prediction model.
A kind of transistor modular fatigue life determining device, described device include:
Saturation voltage drop obtains module, for obtaining the saturation voltage drop of transistor modular；
Prediction model enquiry module corresponds to preset fatigue life prediction model, tired longevity for inquiring transistor modular
Life prediction model is obtained according to fitting fatigue life of the transistor modular under different loads；
Fatigue life determining module obtains transistor modular for inputting saturation voltage drop in fatigue life prediction model
Fatigue life.
A kind of computer equipment can be run on a memory and on a processor including memory, processor and storage
Computer program, the processor perform the steps of when executing the computer program
Obtain the saturation voltage drop of transistor modular；
Inquiry transistor modular corresponds to preset fatigue life prediction model, and fatigue life prediction model is according to crystal pipe die
Fitting fatigue life of the block under different loads obtains；
Saturation voltage drop is inputted in fatigue life prediction model, the fatigue life of transistor modular is obtained.
A kind of computer readable storage medium, is stored thereon with computer program, and the computer program is held by processor
It is performed the steps of when row
Obtain the saturation voltage drop of transistor modular；
Inquiry transistor modular corresponds to preset fatigue life prediction model, and fatigue life prediction model is according to crystal pipe die
Fitting fatigue life of the block under different loads obtains；
Saturation voltage drop is inputted in fatigue life prediction model, the fatigue life of transistor modular is obtained.
Above-mentioned transistor modular fatigue life determines method, apparatus, computer equipment and storage medium, obtains crystal pipe die
The saturation voltage drop of block inputs saturation voltage drop in preset fatigue life prediction model, obtains the fatigue life of transistor modular.
In transistor modular fatigue life determination process, obtained using fitting fatigue life of the transistor modular under different loads
Fatigue life prediction model directly determines the fatigue life of transistor modular according to the saturation voltage drop of transistor modular, improves
The accuracy of the fatigue life of determining transistor modular.
Detailed description of the invention
Fig. 1 is the flow diagram that transistor modular fatigue life determines method in one embodiment；
Fig. 2 is the flow diagram of Life Prediction Model building in one embodiment；
Fig. 3 is GD50HFL120C1S inside modules structure chart in one embodiment；
Fig. 4 is the simulation model schematic diagram and FEM model schematic diagram of GD50HFL120C1S module in Fig. 3；
Fig. 5 is the temperature profile of GD50HFL120C1S module in Fig. 3；
Fig. 6 is the potential profile of GD50HFL120C1S module in Fig. 3；
Fig. 7 is the thermal stress distribution figure of GD50HFL120C1S module in Fig. 3；
Fig. 8 is the equivalent ductility deformation schematic diagram of GD50HFL120C1S module in Fig. 3；
Fig. 9 is fatigue life prediction model schematic diagram in one embodiment；
Figure 10 is the structural block diagram of transistor modular fatigue life determining device in one embodiment；
Figure 11 is the internal structure chart of computer equipment in one embodiment.
Specific embodiment
It is with reference to the accompanying drawings and embodiments, right in order to which the objects, technical solutions and advantages of the application are more clearly understood
The application is further elaborated.It should be appreciated that specific embodiment described herein is only used to explain the application, not
For limiting the application.
In one embodiment, as shown in Figure 1, providing a kind of transistor modular fatigue life determines method, including with
Lower step:
Step S101: the saturation voltage drop of transistor modular is obtained.
Transistor modular can be IGBT module, or MOSFET manages (Metal-Oxide-Semiconductor
Field-Effect Transistor, metal-oxide half field effect transistor), thyristor, diode etc. may answer because of the heat by alternation
Power influences and the transistor modular of fatigue rupture occurs.Saturation voltage drop is the transistor collector when transistor reaches saturation conduction
Potential difference between emitter.The saturation voltage drop of transistor modular can be obtained by saturation voltage drop detection circuit, transistor
Module has different saturation voltage drops under different current loads.
Step S103: inquiry transistor modular corresponds to preset fatigue life prediction model, fatigue life prediction model root
It is obtained according to fitting fatigue life of the transistor modular under different loads.
Wherein, transistor modular number of stress cycles experienced before fatigue rupture is known as fatigue life.Inquire transistor
Module corresponds to preset fatigue life prediction model, and fatigue life prediction model is quasi- under different loads according to transistor modular
Conjunction fatigue life obtains.By the fatigue life prediction model, it can determine that transistor modular is right under different saturation voltage drops
The fatigue life answered.
Step S105: saturation voltage drop is inputted in fatigue life prediction model, the fatigue life of transistor modular is obtained.
Saturation voltage drop is inputted in fatigue life prediction model, the fatigue life of transistor modular is obtained.In concrete application
In, fatigue life prediction model may include fatigue life prediction curve, then can be directly according to saturation voltage drop from fatigue life
Corresponding fatigue life is determined in prediction curve.
Above-mentioned transistor modular fatigue life determines in method, obtains the saturation voltage drop of transistor modular, by saturation voltage drop
It inputs in preset fatigue life prediction model, obtains the fatigue life of transistor modular.It is true in transistor modular fatigue life
During fixed, the fatigue life prediction model obtained using fitting fatigue life of the transistor modular under different loads, directly
The fatigue life that transistor modular is determined according to the saturation voltage drop of transistor modular improves the fatigue of determining transistor modular
The accuracy in service life.
In one embodiment, as shown in Fig. 2, inquiry transistor modular correspond to preset fatigue life prediction model it
Before, further include the steps that Life Prediction Model constructs, specifically include:
Step S201: applying different load to transistor modular, obtains transistor modular and distinguishes under different load
Corresponding Stress distribution.
In the present embodiment, saturation voltage drop is chosen as prediction index, corresponding tired criterion is taken to establish fatigue life
Prediction model realizes the quick and precisely prediction to transistor modular fatigue life.Especially by according to electric-thermal-structure Coupling
Calculated result and fatigue of materials curve carry out the fatigue life of determining module, then change load, obtain the saturation under different operating conditions
Pressure drop and fatigue life, fitting data establish the functional relation between fatigue life and saturation voltage drop, obtain fatigue life prediction
Model.
Specifically, apply different load to transistor modular, be in transistor under different saturation voltage drop states, obtain
Transistor modular corresponding Stress distribution under different load.For example, electric-thermal-structure Coupling meter can be passed through
Calculate thermal stress/Strain Distribution that transistor modular generates.
Step S203: the stress-strain state of transistor modular is determined according to Stress distribution.
The stress-strain state of transistor modular is determined according to Stress distribution, it specifically can be according to transistor modular
The relationship of maximum stress and its yield strength determines the stress-strain state of transistor modular.Wherein, yield strength is metal material
Yield limit when yield phenomenon occurs for material, that is, resists the stress of micro plastic deformation.
Step S205: according to stress-strain state, the corresponding ess-strain curve of fatigue of transistor modular is inquired, crystalline substance is obtained
The fitting fatigue life of body tube module.
After the stress-strain state for determining transistor modular, the corresponding ess-strain curve of fatigue of inquiry transistor modular,
The ess-strain curve of fatigue can be by carrying out fatigue life test to IGBT module material, the friendship born according to obtained component
Relationship between allergic effect stress-strain and fracture circulating cycle time obtains.From the ess-strain curve of fatigue, it can inquire to obtain crystalline substance
The stress-strain state of body tube module corresponding fitting fatigue life.
Step S207: according to each fitting fatigue life, fatigue life prediction model is obtained.
According to each fitting fatigue life of transistor modular, it is pre- to establish fatigue life of the transistor modular under different loads
Survey model.Different loads correspond to different saturation voltage drops, can be from fatigue life prediction mould by the saturation voltage drop of transistor modular
The fatigue life of transistor modular is determined in type.
In the present embodiment, when being determined by obtained fatigue life prediction model to transistor modular progress fatigue life,
Fatigue life prediction directly can be carried out by the collection emitter-base bandgap grading saturation voltage drop combination fatigue life prediction model of transistor modular, than
Traditional method based on internal junction temperature is more direct easy.
In one embodiment, apply different load to transistor modular, obtain transistor modular in different load
Under corresponding Stress distribution include: geometric parameter according to transistor modular, construct the finite element of transistor modular
Model；Apply different load to transistor modular, is coupled and calculated by electrothermal structure, determine transistor modular in different loads
Corresponding Stress distribution under lotus.
Apply different load to transistor modular, calculates transistor modular corresponding stress under different load
When Strain Distribution, the finite element model of transistor modular is constructed, based under the finite-element module, passes through electric-thermal-structure Coupling meter
Calculate the Stress distribution that transistor modular generates.
Specifically, according to the geometric parameter of transistor modular, the finite element model of transistor modular is constructed.Wherein, geometry
Parameter includes the characteristic parameters such as length, width and the height of transistor.When finite element model is with finite element method
The model of foundation is one group and only connects at node, only by node power transmission, the only controlled unit assembly at node.Tool
Body can carry out network subdivision to transistor modular according to the geometric parameter of transistor modular, obtain the finite element of transistor modular
Model.Apply different load to transistor modular, is coupled and calculated by electrothermal structure, determine transistor modular in different loads
Corresponding Stress distribution under lotus, Stress distribution reflect the thermal stress and strain feelings at each position of transistor modular
Condition.
In the present embodiment, is calculated by electric-thermal-structure Coupling and plastic strain and elastic strain occur inside determining module
Separation predicts its service life using strain fatigue curve if there is plastic strain, uses and answers if only there is elastic strain
The power curve of fatigue predicts its service life, improves the accuracy of fatigue life prediction.
In one embodiment, determine that the stress-strain state of transistor modular comprises determining that according to Stress distribution
The yield strength of transistor modular；When the maximum stress for according to Stress distribution, determining transistor modular is greater than yield strength
When, determine that transistor modular is in strain fatigue state；Otherwise, it determines transistor modular is in stress fatigue state.
Transistor modular is obtained under different load after corresponding Stress distribution, the surrender of binding crystal pipe
Intensity determines the stress-strain state of transistor.Specifically, it is determined that the yield strength of transistor modular, yield strength can lead to
It crosses diagrammatic representation and Finger determines.Finite element model based on transistor modular determines crystal pipe die according to Stress distribution
The maximum stress is compared by block maximum stress with yield strength.When the maximum stress of transistor modular is greater than yield strength
When, determine that transistor modular is in strain fatigue state；Otherwise, it determines transistor modular is in stress fatigue state.Different
Stress-strain state can carry out life prediction by different Life Prediction Models.
In one embodiment, the ess-strain curve of fatigue includes strain fatigue curve and stress fatigue curve；According to answering
Stress-strain state, the corresponding ess-strain curve of fatigue of inquiry transistor modular, obtains the fitting fatigue life of transistor modular
It include: to inquire strain fatigue curve when transistor modular is in strain fatigue state, and according to strain fatigue curve, determine
The fitting strain fatigue life of transistor modular, fitting fatigue life include fitting strain fatigue life；At transistor modular
When stress fatigue state, stress fatigue curve is inquired, and according to stress fatigue curve, determines the fitting stress of transistor modular
Fatigue life, fitting fatigue life include the fitting stress fatigue service life.
The ess-strain curve of fatigue includes strain fatigue curve and stress fatigue curve, is respectively used to strain regime and stress
The fatigue life of state determines.In the fitting fatigue life for determining transistor modular, when transistor modular is in strain fatigue
When state, the fitting strain fatigue life of transistor modular is determined according to strain fatigue curve (ε-N curve).Work as transistor modular
When in stress fatigue state, according to stress fatigue curve (S-N curve), the fitting stress fatigue longevity of transistor modular is determined
Life.Being fitted fatigue life includes fitting strain fatigue life and fitting stress fatigue service life.
In one embodiment, according to stress-strain state, it is bent to inquire the corresponding ess-strain fatigue of transistor modular
Line, before the fitting fatigue life for obtaining transistor modular, further includes: fatigue life test is carried out to transistor modular, is obtained
The corresponding test curve of fatigue of transistor modular；According to preset process conditions, the test curve of fatigue is adjusted, is answered
The stress-strain curve of fatigue.
When identified sign strain fatigue curve, fatigue life test can be carried out to transistor modular, obtain crystal pipe die
The corresponding test curve of fatigue of block.Specifically, can based on fatigue life test determine component bear alternate stress strain with
The relationship being broken between the circulating cycle time, to obtain the test curve of fatigue.In view of the process that actual processing carries out, to base
This curve of fatigue is modified, i.e., according to preset process conditions, is adjusted to the test curve of fatigue, it is tired to obtain ess-strain
Labor curve.
In one embodiment, according to each fitting fatigue life, obtaining fatigue life prediction model includes: according to each load
Lotus determines the corresponding saturation voltage drop of transistor modular；According to the saturation voltage drop of transistor modular, with each fitting fatigue life
Between corresponding relationship, obtain fatigue life prediction model.
Different loads correspond to different saturation voltage drops, can be from fatigue life prediction by the saturation voltage drop of transistor modular
The fatigue life of transistor modular is determined in model.Specifically, according to each load, the corresponding saturation of transistor modular is determined
Pressure drop further determines that the corresponding relationship between the saturation voltage drop of transistor modular and each fitting fatigue life, according to the correspondence
Relationship obtains fatigue life prediction model.By changing load, repeat to determine under different loads, i.e., crystalline substance under different saturation voltage drops
Body tube module corresponding fatigue life, the available fatigue life prediction mould for covering each saturation voltage drop and corresponding fatigue life
Type.Inside modules fatigue failure mechanism can accurately be studied using electric-thermal-structural analysis, experimentation cost is reduced, according to right
The tired criterion answered, establishes the relationship between fatigue life and saturation voltage drop, improves the accuracy of life prediction.
In one embodiment, providing a kind of transistor modular fatigue life determines that method, this method are applied to
During the fatigue life of GD50HFL120C1S module is determining.The GD50HFL120C1S inside modules structure is as shown in figure 3, No. 1 end
Son is the collector of pipe 1, and No. 2 terminals are the emitter of pipe 1, while the collector for pipe 2 of also ining succession, and 7 be the emitter voltage of pipe 1
Exit, 6 be the grid of pipe 1；No. 3 terminals are the emitter of pipe 2, and 5 be the emitter voltage exit of pipe 2, and 4 be the grid of pipe 2
The electrical characteristic of pole, module can be measured by these ports.In view of the module is double pipe structure, therefore select one of IGBT
Chip analysis.Since encapsulating material and the silica gel thermal coefficient of filling are smaller, heat mainly passes downwardly through copper base and sheds
, therefore ignore silica gel above and encapsulation, it is believed that adiabatic condition is in above module.
As shown in figure 4, establishing the finite element model of IGBT module, built according to the mock-up of GD50HFL120C1S module
Vertical simulation model carries out the available finite element model of subdivision grid to the simulation model.Apply current load, chooses electric current width
Being worth is 80A, period 6s, duty ratio 1/2, and point of temperature, potential and thermal stress is calculated by electric-thermal-structure Coupling
Cloth, as illustrated in figs. 5-7 for 9s when IGBT module temperature profile, potential profile and thermal stress distribution figure.In conjunction with each material
Yield strength, the equivalent ductility deformation schematic diagram of IGBT module, can determine that bonding wire has had occurred when 9s as shown in Figure 8
Plastic deformation, and thermal stress is respectively less than its yield strength on other layers of material, and elastic deformation only occurs, fatigue life is opposite
Bonding wire is longer, therefore the fatigue life of IGBT module should be the cycle-index of bonding wire strain fatigue failure.
On the other hand, it is controlled by fatigue test using stress and strain width, carries out symmetrical fatigue (the stress ratio R=- of tension and compression
1), frequency 50Hz establishes the relation curve between its corresponding fracture circulation cycle N of ess-strain.Consider actual processing
The process done is modified the basic curve of fatigue, and it is bent to obtain the stress fatigue that bonding wire does not occur under plastic strain
Line (S-N curve) can be expressed as follows formula (1):
Nf=4.13e52 σ-32.06(1)
And the strain fatigue curve (ε-N curve) when bonding wire generation plastic strain is represented by formula (2):
Nf=46.2 ε-1.09(2)
Wherein, σ indicates stress amplitude, and ε indicates strain increment,N fIndicate corresponding fatigue life.
It can determine that IGBT module is carried in the electric current according to revised ε-N curve and electric-thermal-structure field calculated result
Fatigue life under lotus is 8568 times.
Change and apply load, the stress and equivalent plastic strain such as following table that can obtain under different shell temperature are calculated by numerical value
Shown in 1,51 DEG C of junction temperature is the separation of elastic strain and plastic strain.It is fitted, can be built by data according to the data in table 1
The fatigue life prediction model of vertical IGBT module is as shown in Figure 9.
Table 1
According to the curved line relation in Fig. 9, without first measuring internal junction temperature, only saturation voltage drop need to be measured in outside port
Predict the fatigue life of bonding wire, and then the step of simplifying bonding wire fatigue life prediction.According under different saturation voltage drops
Fatigue life overhaul replacement device in advance, can be to avoid because of equipment fault caused by fatigue failure.
It should be understood that although each step in the flow chart of Fig. 1-2 is successively shown according to the instruction of arrow,
These steps are not that the inevitable sequence according to arrow instruction successively executes.Unless expressly stating otherwise herein, these steps
Execution there is no stringent sequences to limit, these steps can execute in other order.Moreover, at least one in Fig. 1-2
Part steps may include that perhaps these sub-steps of multiple stages or stage are not necessarily in synchronization to multiple sub-steps
Completion is executed, but can be executed at different times, the execution sequence in these sub-steps or stage is also not necessarily successively
It carries out, but can be at least part of the sub-step or stage of other steps or other steps in turn or alternately
It executes.
In one embodiment, as shown in Figure 10, a kind of transistor modular fatigue life determining device is provided, comprising:
Saturation voltage drop obtains module 601, prediction model enquiry module 603 and fatigue life determining module 605, in which:
Saturation voltage drop obtains module 601, for obtaining the saturation voltage drop of transistor modular；
Prediction model enquiry module 603 corresponds to preset fatigue life prediction model for inquiring transistor modular, fatigue
Life Prediction Model is obtained according to fitting fatigue life of the transistor modular under different loads；
Fatigue life determining module 605 obtains crystal pipe die for inputting saturation voltage drop in fatigue life prediction model
The fatigue life of block.
It in one embodiment, further include that load applies module, transistor state module, fitting fatigue life module and mould
Type constructs module, in which: load applies module and obtains transistor modular for applying different load to transistor modular and exist
Corresponding Stress distribution under different load；Transistor state module, it is brilliant for being determined according to Stress distribution
The stress-strain state of body tube module；It is fitted fatigue life module, for inquiring transistor modular pair according to stress-strain state
The ess-strain curve of fatigue answered obtains the fitting fatigue life of transistor modular；Model construction module, for according to each fitting
Fatigue life obtains fatigue life prediction model.
In one embodiment, it includes finite element model unit and coupling computing unit that load, which applies module, in which: limited
Meta-model unit constructs the finite element model of transistor modular for the geometric parameter according to transistor modular；Coupling calculates single
Member is coupled by electrothermal structure and is calculated, determine transistor modular different for applying different load to transistor modular
Corresponding Stress distribution under load.
In one embodiment, transistor state module includes yield strength unit and module status unit, in which: surrender
Intensity unit, for determining the yield strength of transistor modular；Module status unit, for working as according to Stress distribution, really
When determining the maximum stress of transistor modular greater than yield strength, determine that transistor modular is in strain fatigue state；Otherwise, it determines
Transistor modular is in stress fatigue state.
In one embodiment, the ess-strain curve of fatigue includes strain fatigue curve and stress fatigue curve；It is fitted tired
Labor service life module includes strain fatigue unit and stress fatigue unit, in which: strain fatigue unit, at transistor modular
When strain fatigue state, strain fatigue curve is inquired, and according to strain fatigue curve, determines the fitting strain of transistor modular
Fatigue life, fitting fatigue life include fitting strain fatigue life；Stress fatigue unit, for being answered when transistor modular is in
When power fatigue state, stress fatigue curve is inquired, and according to stress fatigue curve, determines the fitting stress fatigue of transistor modular
Service life, fitting fatigue life include the fitting stress fatigue service life.
It in one embodiment, further include testing fatigue module and test curve adjustment module, in which: testing fatigue mould
Block obtains the corresponding test curve of fatigue of transistor modular for carrying out fatigue life test to transistor modular；Test curve
Module is adjusted, for being adjusted to the test curve of fatigue, obtaining the ess-strain curve of fatigue according to preset process conditions.
In one embodiment, model construction module includes saturation voltage drop unit and prediction model construction unit, in which: full
And voltage drop unit, for determining the corresponding saturation voltage drop of transistor modular according to each load；Prediction model construction unit,
For the corresponding relationship between the saturation voltage drop according to transistor modular, with each fitting fatigue life, fatigue life prediction is obtained
Model.
Specific restriction about transistor modular fatigue life determining device may refer to above for transistor modular
Fatigue life determines the restriction of method, and details are not described herein.Each mould in above-mentioned transistor modular fatigue life determining device
Block can be realized fully or partially through software, hardware and combinations thereof.Above-mentioned each module can be embedded in the form of hardware or independence
In processor in computer equipment, it can also be stored in a software form in the memory in computer equipment, in order to
Processor, which calls, executes the corresponding operation of the above modules.
In one embodiment, a kind of computer equipment is provided, which can be server, internal junction
Composition can be as shown in figure 11.The computer equipment includes processor, memory and the network interface connected by system bus.
Wherein, the processor of the computer equipment is for providing calculating and control ability.The memory of the computer equipment includes non-easy
The property lost storage medium, built-in storage.The non-volatile memory medium is stored with operating system and computer program.The built-in storage
Operation for operating system and computer program in non-volatile memory medium provides environment.The network of the computer equipment connects
Mouth with external terminal by network connection for being communicated.To realize a kind of transistor when the computer program is executed by processor
Module fatigue life determines method.
It will be understood by those skilled in the art that structure shown in Figure 11, only part relevant to application scheme
The block diagram of structure, does not constitute the restriction for the computer equipment being applied thereon to application scheme, and specific computer is set
Standby may include perhaps combining certain components or with different component layouts than more or fewer components as shown in the figure.
In one embodiment, a kind of computer equipment is provided, including memory, processor and storage are on a memory
And the computer program that can be run on a processor, processor perform the steps of when executing computer program
Obtain the saturation voltage drop of transistor modular；
Inquiry transistor modular corresponds to preset fatigue life prediction model, and fatigue life prediction model is according to crystal pipe die
Fitting fatigue life of the block under different loads obtains；
Saturation voltage drop is inputted in fatigue life prediction model, the fatigue life of transistor modular is obtained.
In one embodiment, it is also performed the steps of when processor executes computer program and transistor modular is applied
Different load obtains transistor modular corresponding Stress distribution under different load；According to ess-strain point
Cloth determines the stress-strain state of transistor modular；According to stress-strain state, the corresponding ess-strain of transistor modular is inquired
The curve of fatigue obtains the fitting fatigue life of transistor modular；According to each fitting fatigue life, fatigue life prediction mould is obtained
Type.
In one embodiment, it also performs the steps of when processor executes computer program according to transistor modular
Geometric parameter constructs the finite element model of transistor modular；Apply different load to transistor modular, passes through electrothermal structure coupling
It is total to calculate, determine transistor modular corresponding Stress distribution under different load.
In one embodiment, determining transistor modular is also performed the steps of when processor executes computer program
Yield strength；When the maximum stress for according to Stress distribution, determining transistor modular is greater than yield strength, transistor is determined
Module is in strain fatigue state；Otherwise, it determines transistor modular is in stress fatigue state.
In one embodiment, the ess-strain curve of fatigue includes strain fatigue curve and stress fatigue curve；Processor
It also performs the steps of when executing computer program when transistor modular is in strain fatigue state, inquiry strain fatigue is bent
Line, and according to strain fatigue curve, determine the fitting strain fatigue life of transistor modular, fitting fatigue life includes that fitting is answered
Become fatigue life；When transistor modular is in stress fatigue state, stress fatigue curve is inquired, and according to stress fatigue song
Line determines that the fitting stress fatigue service life of transistor modular, fitting fatigue life include the fitting stress fatigue service life.
In one embodiment, it is also performed the steps of when processor executes computer program and transistor modular is carried out
Fatigue life test, obtains the corresponding test curve of fatigue of transistor modular；It is bent to test fatigue according to preset process conditions
Line is adjusted, and obtains the ess-strain curve of fatigue.
In one embodiment, it is also performed the steps of when processor executes computer program according to each load, is determined brilliant
The corresponding saturation voltage drop of body tube module；According to pair between the saturation voltage drop of transistor modular, with each fitting fatigue life
It should be related to, obtain fatigue life prediction model.
In one embodiment, a kind of computer readable storage medium is provided, computer program is stored thereon with, is calculated
Machine program performs the steps of when being executed by processor
Obtain the saturation voltage drop of transistor modular；
Inquiry transistor modular corresponds to preset fatigue life prediction model, and fatigue life prediction model is according to crystal pipe die
Fitting fatigue life of the block under different loads obtains；
Saturation voltage drop is inputted in fatigue life prediction model, the fatigue life of transistor modular is obtained.
In one embodiment, it is also performed the steps of when computer program is executed by processor and transistor modular is applied
Add different load, obtains transistor modular corresponding Stress distribution under different load；According to ess-strain
It is distributed the stress-strain state for determining transistor modular；According to stress-strain state, inquires the corresponding stress of transistor modular and answer
Become the curve of fatigue, obtains the fitting fatigue life of transistor modular；According to each fitting fatigue life, fatigue life prediction mould is obtained
Type.
In one embodiment, it also performs the steps of when computer program is executed by processor according to transistor modular
Geometric parameter, construct the finite element model of transistor modular；Apply different load to transistor modular, passes through electrothermal structure
Coupling calculates, and determines transistor modular corresponding Stress distribution under different load.
In one embodiment, determining transistor modular is also performed the steps of when computer program is executed by processor
Yield strength；When the maximum stress for according to Stress distribution, determining transistor modular is greater than yield strength, crystal is determined
Tube module is in strain fatigue state；Otherwise, it determines transistor modular is in stress fatigue state.
In one embodiment, the ess-strain curve of fatigue includes strain fatigue curve and stress fatigue curve；Computer
It is also performed the steps of when program is executed by processor when transistor modular is in strain fatigue state, inquires strain fatigue
Curve, and according to strain fatigue curve, determine the fitting strain fatigue life of transistor modular, fitting fatigue life includes fitting
Strain fatigue life；When transistor modular is in stress fatigue state, stress fatigue curve is inquired, and according to stress fatigue song
Line determines that the fitting stress fatigue service life of transistor modular, fitting fatigue life include the fitting stress fatigue service life.
In one embodiment, also performed the steps of when computer program is executed by processor to transistor modular into
The test of row fatigue life, obtains the corresponding test curve of fatigue of transistor modular；According to preset process conditions, to test fatigue
Curve is adjusted, and obtains the ess-strain curve of fatigue.
In one embodiment, it is also performed the steps of when computer program is executed by processor according to each load, is determined
The corresponding saturation voltage drop of transistor modular；According between the saturation voltage drop of transistor modular, with each fitting fatigue life
Corresponding relationship obtains fatigue life prediction model.
Those of ordinary skill in the art will appreciate that realizing all or part of the process in above-described embodiment method, being can be with
Relevant hardware is instructed to complete by computer program, the computer program can be stored in a non-volatile computer
In read/write memory medium, the computer program is when being executed, it may include such as the process of the embodiment of above-mentioned each method.Wherein,
To any reference of memory, storage, database or other media used in each embodiment provided herein,
Including non-volatile and/or volatile memory.Nonvolatile memory may include read-only memory (ROM), programming ROM
(PROM), electrically programmable ROM (EPROM), electrically erasable ROM (EEPROM) or flash memory.Volatile memory may include
Random access memory (RAM) or external cache.By way of illustration and not limitation, RAM is available in many forms,
Such as static state RAM (SRAM), dynamic ram (DRAM), synchronous dram (SDRAM), double data rate sdram (DDRSDRAM), enhancing
Type SDRAM (ESDRAM), synchronization link (Synchlink) DRAM (SLDRAM), memory bus (Rambus) direct RAM
(RDRAM), direct memory bus dynamic ram (DRDRAM) and memory bus dynamic ram (RDRAM) etc..
Each technical characteristic of above embodiments can be combined arbitrarily, for simplicity of description, not to above-described embodiment
In each technical characteristic it is all possible combination be all described, as long as however, the combination of these technical characteristics be not present lance
Shield all should be considered as described in this specification.
The several embodiments of the application above described embodiment only expresses, the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the concept of this application, various modifications and improvements can be made, these belong to the protection of the application
Range.Therefore, the scope of protection shall be subject to the appended claims for the application patent.
Claims (10)
1. a kind of transistor modular fatigue life determines method, which comprises
Obtain the saturation voltage drop of transistor modular；
It inquires the transistor modular and corresponds to preset fatigue life prediction model, the fatigue life prediction model is according to
Fitting fatigue life of the transistor modular under different loads obtains；
The saturation voltage drop is inputted in the fatigue life prediction model, the fatigue life of the transistor modular is obtained.
2. the method according to claim 1, wherein being corresponded in the inquiry transistor modular preset tired
Before labor Life Prediction Model, further includes:
Apply different load to the transistor modular, it is corresponding under different load to obtain the transistor modular
Stress distribution；
The stress-strain state of the transistor modular is determined according to the Stress distribution；
According to the stress-strain state, the corresponding ess-strain curve of fatigue of the transistor modular is inquired, the crystalline substance is obtained
The fitting fatigue life of body tube module；
According to each fitting fatigue life, the fatigue life prediction model is obtained.
3. according to the method described in claim 2, it is characterized in that, described apply different load to the transistor modular,
Obtaining the transistor modular corresponding Stress distribution under different load includes:
According to the geometric parameter of the transistor modular, the finite element model of the transistor modular is constructed；
Apply different load to the transistor modular, is coupled and calculated by electrothermal structure, determine that the transistor modular exists
Corresponding Stress distribution under different load.
4. according to the method described in claim 2, it is characterized in that, described determine the crystal according to the Stress distribution
The stress-strain state of tube module includes:
Determine the yield strength of the transistor modular；
When the maximum stress for according to the Stress distribution, determining the transistor modular is greater than the yield strength, really
The fixed transistor modular is in strain fatigue state；Otherwise, it determines the transistor modular is in stress fatigue state.
5. according to the method described in claim 2, it is characterized in that, the ess-strain curve of fatigue includes strain fatigue curve
With stress fatigue curve；It is described according to the stress-strain state, inquire the corresponding ess-strain fatigue of the transistor modular
Curve, the fitting fatigue life for obtaining the transistor modular include:
When the transistor modular is in strain fatigue state, the strain fatigue curve is inquired, and should weaken according to described
Labor curve determines the fitting strain fatigue life of the transistor modular, and the fitting fatigue life includes the fitting strain
Fatigue life；
When the transistor modular is in stress fatigue state, the stress fatigue curve is inquired, and tired according to the stress
Labor curve determines that the fitting stress fatigue service life of the transistor modular, the fitting fatigue life include the fitting stress
Fatigue life.
6. according to the method described in claim 5, it is characterized in that, described according to the stress-strain state, described in inquiry
The corresponding ess-strain curve of fatigue of transistor modular, before the fitting fatigue life for obtaining the transistor modular, further includes:
Fatigue life test is carried out to the transistor modular, obtains the corresponding test curve of fatigue of the transistor modular；
According to preset process conditions, the test curve of fatigue is adjusted, the ess-strain curve of fatigue is obtained.
7. according to method described in claim 2 to 6 any one, which is characterized in that described according to each fitting tired longevity
Life, obtaining the fatigue life prediction model includes:
According to each load, the corresponding saturation voltage drop of the transistor modular is determined；
According to the corresponding relationship between the saturation voltage drop of the transistor modular, with each fitting fatigue life, obtain
The fatigue life prediction model.
8. a kind of transistor modular fatigue life determining device, which is characterized in that described device includes:
Saturation voltage drop obtains module, for obtaining the saturation voltage drop of transistor modular；
Prediction model enquiry module corresponds to preset fatigue life prediction model for inquiring the transistor modular, described tired
Labor Life Prediction Model is obtained according to fitting fatigue life of the transistor modular under different loads；
Fatigue life determining module obtains the crystalline substance for inputting the saturation voltage drop in the fatigue life prediction model
The fatigue life of body tube module.
9. a kind of computer equipment, including memory and processor, the memory are stored with computer program, feature exists
In the step of processor realizes any one of claims 1 to 7 the method when executing the computer program.
10. a kind of computer readable storage medium, is stored thereon with computer program, which is characterized in that the computer program
The step of method described in any one of claims 1 to 7 is realized when being executed by processor.
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