CN113987747A - IGBT module aging failure analysis method considering bonding wire breakage - Google Patents
IGBT module aging failure analysis method considering bonding wire breakage Download PDFInfo
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Abstract
The invention discloses an IGBT module aging failure analysis method considering bond wire breakage, which comprises the following steps: the method comprises the following steps of firstly, obtaining the loss of an IGBT module under a working condition by utilizing PSpice; step two, establishing a finite element model of the bonding wire under different fracture conditions according to the actual size of the IGBT module; step three, performing thermoelectric coupling analysis on the IGBT model obtained in the step one through ANSYS Thermal-Electric; step four, importing the temperature field result obtained in the step two into an ANSYS Workbench Static Structure for electric-thermal-Structure coupling analysis to obtain a stress strain result of each position of the IGBT module; and fifthly, carrying out fatigue analysis on the IGBT module through ANSYS nCode design Life software to finish the aging failure analysis of the IGBT module under different fracture conditions of the bonding wire. The method is completed by means of simulation software, the corresponding IGBT module does not need to be damaged, and the influence of the breakage of the bonding wire on the reliability of the IGBT module is considered.
Description
Technical Field
The invention belongs to the field of reliability analysis of power electronic components, and particularly relates to an IGBT module aging failure analysis method considering breakage of a bonding wire.
Background
Due to the cyclic thermal stress generated by the IGBT module during working and the shear stress generated by the larger thermal expansion coefficient of the aluminum bonding wire and the silicon chip, the fatigue aging of the bonding wire of the IGBT module is caused, the failure of the IGBT module is easily caused, the shutdown of an electric energy conversion device is caused, and the safety and the reliability of a power system and an industrial control system are influenced.
The temperature rise of the bonding wires and the chip can cause the stress increase of the bonding wires, the fatigue of the bonding wires is accelerated, when one or more bonding wires are broken, the current density of the rest bonding wires is increased, the temperature of the rest bonding wires is further increased, the stress of the rest bonding wires is increased, and the rest fatigue life of the rest bonding wires is greatly reduced.
Therefore, the fatigue aging failure process of the bonding wire is simulated, and the analysis of the aging failure of the bonding wire has important practical significance on the reliability influence of the IGBT module. The existing research on fatigue failure and reliability of the IGBT module is mostly based on analysis of results of power cycle experiments or temperature cycle experiments, and the method cannot be used for qualitatively and quantitatively analyzing the reliability influence of the fracture of the bonding wire on the IGBT module, namely neglecting the influence of the fatigue aging failure of the bonding wire on the reliability of the IGBT module, so that the influence mechanism of the fatigue aging failure process of the bonding wire on the reliability of the IGBT module is unclear.
Disclosure of Invention
In order to achieve the purpose, the invention adopts the technical scheme that:
an IGBT module aging failure analysis method considering bond wire breakage comprises the following steps:
the method comprises the following steps of firstly, obtaining the loss of an IGBT module under a working condition by utilizing PSpice;
step two, establishing a finite element model of the bonding wire under different fracture conditions according to the actual size of the IGBT module;
step three, performing thermoelectric coupling analysis on the IGBT module model obtained in the step one through ANSYS Thermal-Electric;
step four, importing the temperature field result obtained in the step two into an ANSYS Workbench Static Structure for electric-thermal-Structure coupling analysis to obtain a stress strain result of each position of the IGBT module;
and fifthly, carrying out fatigue analysis on the IGBT module through ANSYS nCode design Life software to finish the aging failure analysis of the IGBT module under different fracture conditions of the bonding wire.
Further, the first step is specifically as follows: and (3) building an IGBT module test circuit in the PSpice, then adding the parasitic parameters extracted by Q3D, and calculating the average loss value of the IGBT module in one period.
Further, the second step and the third step are specifically as follows: establishing finite element models of the bonding wires under different fracture degrees according to the actual size of the IGBT module, wherein the finite element models comprise the bonding wires, a chip solder layer, a DBC layer, a substrate solder layer and a substrate, guiding the IGBT module finite element model containing the fracture of the bonding wires into ANSYS Thermal-electric, carrying out grid division on the finite element three-dimensional model of the IGBT module, setting material parameters of all parts in the model, setting a heat exchange coefficient of the bottom surface of the substrate as a constant, adding the loss calculated in the first step as a heat source to the silicon chip, and setting an effective value of current introduced to the bonding wires of the module. And performing thermoelectric coupling analysis based on ANSYS Thermal-Electric to obtain a temperature distribution simulation result.
Further, the fourth step is specifically: and (3) coupling Thermal-Electric with the Static Structure in an ANSYS Workbench, and introducing the temperature stress simulation result obtained in the third step into the Static Structure to perform Electric-Thermal-Structure coupling analysis to obtain a stress strain result of each position of the IGBT module.
Further, the fifth step is specifically: and importing the stress-strain results obtained in the third step and the fourth step into ANSYS nCode DesignLife software, and performing fatigue analysis on the IGBT module by adopting a stress fatigue solving engine nCode SN TimeSeries (DesignLife) in the ANSYS nCode DesignLife to complete the aging failure analysis of the IGBT module under different fracture conditions of the bonding wire.
Compared with the prior art, the invention has the beneficial effects that:
the method for analyzing the aging and failure of the IGBT module is completed by means of simulation software, the corresponding IGBT module does not need to be damaged, and the influence of the breakage of the bonding wire on the reliability of the IGBT module is considered.
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In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments described in the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic flowchart of an IGBT module aging failure analysis method considering bond wire breakage according to an embodiment of the present invention;
fig. 2 is a finite element model of an IGBT module according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
Referring to fig. 1, an IGBT module aging failure analysis method considering bond wire breakage according to an embodiment of the present invention includes:
the method comprises the following steps of firstly, obtaining the loss of an IGBT module under a working condition by utilizing PSpice;
and (2) building a power module circuit in the PSpice, then adding the parasitic parameters extracted by Q3D, according to the definition of instantaneous power, obtaining the voltage-current product at each moment as the loss instantaneous value of the IGBT module at the moment, and performing time-related integration on the power loss instantaneous value in a period and dividing the power loss instantaneous value by the period length to obtain the loss average value of the IGBT module in the period.
Step two, establishing a finite element model of the bonding wire under different fracture conditions according to the actual size of the IGBT module;
step three, performing thermoelectric coupling analysis on the IGBT module model obtained in the step one through ANSYS Thermal-Electric;
establishing finite element models of the bonding wires under different fracture degrees according to the actual size of the IGBT module, and referring to fig. 2, the finite element models comprise the bonding wires, a chip solder layer, a DBC layer, a substrate solder layer and a substrate, guiding the IGBT module finite element models containing the fracture of the bonding wires into ANSYS Thermal-Electric, carrying out grid division on the finite element three-dimensional models of the IGBT module, carrying out encryption processing on the bonding wires, and setting material parameters of each part in the models, as shown in a table I; applying temperature load and boundary conditions, wherein the temperature load comprises ambient temperature, the power consumption of an IGB T module and the heat generated when bonding wires are connected with current, setting the ambient temperature to be 25 ℃ at room temperature, setting the heat exchange coefficient of the bottom surface of the substrate to be a constant, adding the loss calculated in the step one as a heat source to a silicon chip, and setting the effective value of the current connected to the bonding wires of the module. And performing thermoelectric coupling analysis based on ANSYS Thermal-Electric to finally obtain temperature distribution results of all position points of each part of the IGBT module.
TABLE 1
Step four, importing the temperature field result obtained in the step two into an ANSYS Workbench Static Structure for electric-thermal-Structure coupling analysis to obtain a stress strain result of each position of the IGBT module;
and coupling Thermal-Electric with the Static Structure in an ANSYS Workbench, introducing the temperature stress simulation result obtained in the third step into the Static Structure for Electric-Thermal-Structure coupling analysis, and setting the bottom surface of the IGBT module as fixed constraint to obtain the stress strain result of each position of the IGBT module.
And fifthly, carrying out fatigue analysis on the IGBT module through ANSYS nCode design Life software to finish the aging failure analysis of the IGBT module under different fracture conditions of the bonding wire.
And importing the stress-strain results obtained in the third Step and the fourth Step into ANSYS nCode design Life software, wherein thermal stress generated by the IGBT module is smaller than the ultimate strength of the material of the IGBT module, and the cycle number is very high, so that the stress-driven fatigue failure is considered, fatigue analysis is performed on the IGBT module by adopting a stress fatigue solving engine nCode SN Time Step (design Life) in the ANSYS nCode design Life, the 'included Temperature' is set as 'True' to consider the Temperature effect, a Dang Van analysis engine 'included apparatus equivalent plastic strain' is opened to read in the result equivalent plastic strain, the load Step is modified to be equal to the Time Step so that the load in the fatigue analysis is equal to the Time Step in the finite element, and the aging failure analysis of the IGBT module under different fracture conditions of the bonding wire is completed.
In the description of the present invention, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implying any number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. The meaning of "plurality" is two or more unless specifically limited otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.
Claims (4)
1. An IGBT module aging failure analysis method considering bond wire breakage is characterized by comprising the following steps:
the method comprises the following steps of firstly, obtaining the loss of an IGBT module under a working condition by utilizing PSpice;
step two, establishing a finite element model of the bonding wire under different fracture conditions according to the actual size of the IGBT module;
step three, performing thermoelectric coupling analysis on the IGBT module model obtained in the step one through ANSYS Thermal-Electric;
step four, importing the temperature field result obtained in the step two into an ANSYS Workbench Static Structure for electric-thermal-Structure coupling analysis to obtain a stress strain result of each position of the IGBT module;
and fifthly, carrying out fatigue analysis on the IGBT module through ANSYS nCode design Life software to finish the aging failure analysis of the IGBT module under different fracture conditions of the bonding wire.
2. The IGBT module aging failure analysis method considering bonding wire breakage as claimed in claim 1, wherein the first step comprises: and (3) building a power module circuit in the PSpice, then adding the parasitic parameters extracted by Q3D, and calculating the average loss value of the IGBT module in one period.
3. The method for analyzing the aging failure of the IGBT module considering the breakage of the bonding wires as claimed in claim 1, wherein a three-dimensional finite element model containing broken bonding wires is introduced into an ANSYS Thermal-Electric and ANSYS Workbench Static Structure for grid division, and an electrothermal stress under an actual working condition is applied to the finite element model of the IGBT module for Electric-Thermal-Structure coupling analysis.
4. The method for analyzing the aging failure of the IGBT module considering the fracture of the bonding wire according to claim 1, wherein the stress-strain result is imported into ANSYS nCode design Life software, and fatigue analysis is performed on the IGBT module by using a stress fatigue solving engine nCode SN TimeSeries (design Life) in the ANSYS nCode design Life to complete the aging failure analysis of the IGBT module under different fracture conditions of the bonding wire.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117519693A (en) * | 2024-01-02 | 2024-02-06 | 深圳维盛半导体科技有限公司 | 3D conversion method, device, equipment and storage medium for bond wire quota statistics |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117519693A (en) * | 2024-01-02 | 2024-02-06 | 深圳维盛半导体科技有限公司 | 3D conversion method, device, equipment and storage medium for bond wire quota statistics |
| CN117519693B (en) * | 2024-01-02 | 2024-04-02 | 深圳维盛半导体科技有限公司 | 3D conversion method, device, equipment and storage medium for bond wire quota statistics |
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