CN108060455A - A kind of crucible guard boards of quasi- G7 ingot castings thermal field - Google Patents
A kind of crucible guard boards of quasi- G7 ingot castings thermal field Download PDFInfo
- Publication number
- CN108060455A CN108060455A CN201711392304.7A CN201711392304A CN108060455A CN 108060455 A CN108060455 A CN 108060455A CN 201711392304 A CN201711392304 A CN 201711392304A CN 108060455 A CN108060455 A CN 108060455A
- Authority
- CN
- China
- Prior art keywords
- backplates
- crucible
- guard boards
- sides
- thermal field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
A kind of crucible guard boards of quasi- G7 ingot castings thermal field, the crucible guard boards device is sleeved on the outside of silica crucible, crucible guard boards device includes polylith A backplates and B backplates, the A backplates and B backplates are 135 ° of flanging type structures, A backplates and B backplates are connected with each other position octahedral structure, the position that A backplates and B backplates both sides are connected with each other is corresponding step structure, multiple bolts hole are equipped on the step structure of the A backplates both sides, the multiple and corresponding elliptical hole of bolt hole is equipped on the step structure of B backplates both sides, and passes through graphite and is bolted fixation.The backplate disclosure satisfy that in internal diameter be empty use demand in the thermal field of 1830mm ingot casting furnace bodies, and it can be allocated according to the excursion of silica crucible appearance and size, backplate is made to be bonded with crucible even closer, support crucible does not occur larger softening deformation in hot stage crystal orientation transition process and generates silicon liquid overflow accident.
Description
Technical field
The present invention relates to a kind of crucible guard boards devices of quasi- G7 ingot castings thermal field.
Background technology
The Energy restructuring brought with socio-economic development, solar photovoltaic industry is in energy field in occupation of more next
More important strategic position.Crystal silicon solar photovoltaic generation is with fastest developing speed at present, most active and developmental research potentiality profits
With field, and in crystal silicon battery material fabrication process, current most important mode is based on polycrystalline cast ingot.
In a normal polycrystal silicon ingot, the silico briquette at four angles is second-rate, because being determined by crucible face impurity and polycrystal silicon ingot
It is influenced to growth impurities removal, impurity concentration is higher, and four angle silico briquettes are in the strong and weak uneven region of thermal field radiation, so crystal
Dislocation value is higher, and minority carrier life time value is poor, causes to influence photoelectric conversion efficiency.Quasi- G7 silicon ingots eliminate corner defective and low effect silico briquette
Silicon ingot average efficiency can be improved, and increases silicon ingot throwing stove weight to reduce ingot casting cost.
It is invaded to reduce crucible face impurity to silicon ingot central area, causes the reduction of silicon ingot transfer efficiency, while in order to simultaneous
The total silicon material utilization rate of ingot casting process is cared for, crucible size can be adjusted according to actual conditions, so backplate size needs to adapt to earthenware
Crucible change in size is adjusted, while quasi- G7 ingot furnaces are influenced by empty size in thermal field, are easily made after the installation of conventional crucible backplate
Into heater arcing, so the design of crucible guard boards device plays key effect during quasi- G7 ingot castings.
The content of the invention
Its purpose of the invention, which is that, provides a kind of crucible guard boards of quasi- G7 ingot castings thermal field, solves prior art presence
Crystal dislocation value is higher, and minority carrier life time value is poor, causes to influence photoelectricity
The problem of transfer efficiency.
It adopts the technical scheme that achieve the above object, a kind of crucible guard boards of quasi- G7 ingot castings thermal field, the crucible
Guard plate apparatus is sleeved on the outside of silica crucible, and crucible guard boards device includes polylith A backplates and B backplates, the A backplates and B backplates
It is 135 ° of flanging type structures, A backplates and B backplates are connected with each other position octahedral structure, and A backplates and B backplates both sides are connected with each other
Position be corresponding step structure, multiple bolts hole, B backplates two are equipped on the step structure of the A backplates both sides
The multiple and corresponding elliptical hole of bolt hole is equipped on the step structure of side, and passes through graphite and is bolted fixation.
Advantageous effect
1. the present invention has the following advantages compared with prior art.
2. symmetry is more preferable after the backplate is installed for flanging type compared with straight flange type backplate；
3. backplate screw rod link position avoids heater connection intervening portion, backplate and heater arcing risk are reduced；
4. stepped ramp type is cross-linked and increases thermal field and can utilize space；
5. ellipse slot hole designs the suitability that can increase backplate and crucible, backplate is made to be contacted with crucible face more preferably, to silicon ingot
Heat conduction and crucible protection can be played the role of fine.
Description of the drawings
Below in conjunction with attached drawing, the invention will be further described.
Fig. 1 is structure diagram of the present invention in thermal field；
Fig. 2 is A backplates and B backplate disassembly diagrams in the present invention；
Fig. 3 is the connection diagram of A backplates and B backplates in the present invention；
Fig. 4 is the structure top view of the present invention.
Specific embodiment
A kind of crucible guard boards of quasi- G7 ingot castings thermal field, as Figure 1-Figure 4 the crucible guard boards device 2 be sleeved on quartzy earthenware
1 outside of crucible, crucible guard boards device 2 include polylith A backplates 4 and B backplates 5, and the A backplates 4 and B backplates 5 are 135 ° of flanging types
Structure, A backplates 4 and B backplates 5 are connected with each other position octahedral structure, and the position that A backplates 4 and 5 both sides of B backplates are connected with each other is
Corresponding step structure is equipped with multiple bolts hole 6, the step of 5 both sides of B backplates on the step structure of 4 both sides of A backplates
Multiple and 6 corresponding elliptical hole 7 of bolt hole is equipped in structure, and passes through the connection of graphite bolt 3 and fixes.
Thermal insulating steel cage is placed in the ingot furnace that internal diameter is 1830mm, carbon felt material thermal insulation board is installed on thermal insulating steel cage,
Top heat plate and surrounding heating plate inside thermal insulation board are installed, graphite support column and DS blocks Zhi Chiping are provided in thermal field
Platform is filled with inside the silica crucible during ingot casting after polycrystalline silicon material and is positioned over DS blocks and supports above platform.A backplates of the present invention
4 and B backplates 5 are for being supported to silica crucible and protective effect, and conduct heat to the device of silicon material, and the present invention is logical
It crosses to graphite protective plate structure and connection mode design, is connected eventually by threaded spindle cap nut 3, form polygon crucible guard boards device
（Such as Fig. 4）.
A backplates 4 and B backplates 5 all design flanging as 135 °, are handed over when installing and using by 4 pieces of A backplates 4 and 4 pieces of B backplates 5
Misspelled to connect use, for the step structure that backplate is set, A backplates are top bar, and B backplates are to get out of a predicament or an embarrassing situation.On 4 or so step of A backplates
It is provided that installation screw rod, oval slot hole 7 is provided that on 5 or so step of B backplates.A backplates 4 and B backplates 5 are in using
Finally it is spliced into 8 face body structures.
Claims (1)
1. a kind of crucible guard boards of quasi- G7 ingot castings thermal field, the crucible guard boards device（2）It is sleeved on silica crucible（1）Outside, earthenware
Crucible guard plate apparatus（2）Including polylith A backplates（4）With B backplates（5）, which is characterized in that the A backplates（4）With B backplates（5）It is
135 ° of flanging type structures, A backplates（4）With B backplates（5）It is connected to octahedral structure, A backplates（4）With B backplates（5）Both sides
The position of interconnection is corresponding step structure, the A backplates（4）Multiple bolts are equipped on the step structure of both sides
Hole（6）, B backplates（5）Multiple and bolt hole is equipped on the step structure of both sides（6）Corresponding elliptical hole（7）, and pass through
Graphite bolt（3）Connection is fixed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711392304.7A CN108060455A (en) | 2017-12-21 | 2017-12-21 | A kind of crucible guard boards of quasi- G7 ingot castings thermal field |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711392304.7A CN108060455A (en) | 2017-12-21 | 2017-12-21 | A kind of crucible guard boards of quasi- G7 ingot castings thermal field |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108060455A true CN108060455A (en) | 2018-05-22 |
Family
ID=62139580
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711392304.7A Pending CN108060455A (en) | 2017-12-21 | 2017-12-21 | A kind of crucible guard boards of quasi- G7 ingot castings thermal field |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108060455A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113699581A (en) * | 2021-04-14 | 2021-11-26 | 赛维Ldk太阳能高科技(新余)有限公司 | Ingot casting single crystal furnace and preparation method of ingot casting single crystal silicon |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201183850Y (en) * | 2008-01-28 | 2009-01-21 | 常州天合光能有限公司 | Guard board of polycrystalline silicon casting furnace copple |
| CN204434771U (en) * | 2014-12-31 | 2015-07-01 | 江西赛维Ldk太阳能高科技有限公司 | A kind of crucible of polycrystalline silicon ingot furnace guard plate apparatus |
| CN106702485A (en) * | 2017-03-14 | 2017-05-24 | 晶科能源有限公司 | Polycrystal ingot furnace |
| CN207811931U (en) * | 2017-12-21 | 2018-09-04 | 江西旭阳雷迪高科技股份有限公司 | A kind of crucible guard boards device of quasi- G7 ingot castings thermal field |
-
2017
- 2017-12-21 CN CN201711392304.7A patent/CN108060455A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201183850Y (en) * | 2008-01-28 | 2009-01-21 | 常州天合光能有限公司 | Guard board of polycrystalline silicon casting furnace copple |
| CN204434771U (en) * | 2014-12-31 | 2015-07-01 | 江西赛维Ldk太阳能高科技有限公司 | A kind of crucible of polycrystalline silicon ingot furnace guard plate apparatus |
| CN106702485A (en) * | 2017-03-14 | 2017-05-24 | 晶科能源有限公司 | Polycrystal ingot furnace |
| CN207811931U (en) * | 2017-12-21 | 2018-09-04 | 江西旭阳雷迪高科技股份有限公司 | A kind of crucible guard boards device of quasi- G7 ingot castings thermal field |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113699581A (en) * | 2021-04-14 | 2021-11-26 | 赛维Ldk太阳能高科技(新余)有限公司 | Ingot casting single crystal furnace and preparation method of ingot casting single crystal silicon |
| CN113699581B (en) * | 2021-04-14 | 2024-02-13 | 赛维Ldk太阳能高科技(新余)有限公司 | Ingot single crystal furnace and preparation method of ingot single crystal silicon |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20180522 |