CN108039378A - 太阳能电池上电极的制备方法 - Google Patents

太阳能电池上电极的制备方法 Download PDF

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CN108039378A
CN108039378A CN201711132784.3A CN201711132784A CN108039378A CN 108039378 A CN108039378 A CN 108039378A CN 201711132784 A CN201711132784 A CN 201711132784A CN 108039378 A CN108039378 A CN 108039378A
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杨苗
郁操
徐希翔
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Beijing Juntai Innovation Technology Co Ltd
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Priority to CN201711132784.3A priority Critical patent/CN108039378A/zh
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Priority to PCT/CN2018/092490 priority patent/WO2019095695A1/zh
Priority to CN201880001492.2A priority patent/CN110114889B/zh
Priority to US16/021,850 priority patent/US20190148582A1/en
Priority to KR1020180075678A priority patent/KR20190055711A/ko
Priority to JP2018124832A priority patent/JP2019091878A/ja
Priority to EP18180748.8A priority patent/EP3486952A1/en
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Abstract

本发明公开了一种太阳能电池上电极的制备方法，其包括在电池芯片上沉积金属接触层；在金属接触层上通过丝网印刷工艺形成电极。本发明提供的太阳能电池上电极的制备方法，通过在电池芯片和电极之间沉积一层金属接触层，有效提升了银浆在电池上的附着力，同时改善了银浆与电池的接触电阻，增强了电池芯片的发电效率。

Description

太阳能电池上电极的制备方法
技术领域
本发明涉及太阳能电池技术领域，尤其涉及一种太阳能电池上电极的制备方法。
背景技术
太阳能电池具有较强的发电性能。太阳能电池通过其上的电极输出电流，而常见的电极引出方式是直接丝网印刷银浆。但是，为了兼顾上一工艺，目前的银浆采用的都是低温银浆，因此往往接触电阻比较大，同时附着力也难以兼顾。
发明内容
本发明的目的是提供一种太阳能电池上电极的制备方法，以解决上述现有技术中的问题，提升银浆在电池上的附着力，改善银浆与电池的接触电阻。
本发明提供了一种太阳能电池上电极的制备方法，其中，包括如下步骤：
在晶体硅上沉积金属接触层；
在所述金属接触层上通过丝网印刷工艺形成电极。
如上所述的太阳能电池上电极的制备方法，其中，优选的是，在晶体硅上沉积金属接触层具体包括：
在晶体硅上的透明导电层上沉积金属接触层。
如上所述的太阳能电池上电极的制备方法，其中，优选的是，在晶体硅上的透明导电层上沉积金属接触层具体包括：
在所述晶体硅的正面和背面分别沉积本征非晶硅层；
在所述晶体硅的正面和背面的所述本征非晶硅层上分别沉积N型非晶硅层和P型非晶硅层；
在所述N型非晶硅层和所述P型非晶硅层上分别沉积透明导电层；
在所述晶体硅的正面和背面的所述透明导电层上分别沉积金属接触层。
如上所述的太阳能电池上电极的制备方法，其中，优选的是，在所述金属接触层上通过丝网印刷工艺形成电极之后还包括：
采用化学腐蚀去除未被所述电极覆盖部分的所述金属接触层。
如上所述的太阳能电池上电极的制备方法，其中，优选的是，在采用化学腐蚀去除未被所述电极覆盖部分的所述金属接触层之前还包括：
烘干经过所述丝网印刷工艺形成的所述电极。
如上所述的太阳能电池上电极的制备方法，其中，优选的是，烘干温度为150℃～250℃。
如上所述的太阳能电池上电极的制备方法，其中，优选的是，所述金属接触层的厚度范围值为2～9nm.
如上所述的太阳能电池上电极的制备方法，其中，优选的是，所述电极由银浆与树脂的混合物构成。
如上所述的太阳能电池上电极的制备方法，其中，优选的是，在晶体硅上沉积金属接触层具体包括：
采用物理气相沉积工艺制备所述金属接触层。
如上所述的太阳能电池上电极的制备方法，其中，优选的是，在晶体硅上沉积金属接触层之后还包括：
采用低温热注入或低温光注入退火方式修复所述金属接触层。
如上所述的太阳能电池上电极的制备方法，其中，优选的是，在晶体硅上沉积金属接触层具体包括：
采用电镀法制备所述金属接触层。
如上所述的太阳能电池上电极的制备方法，其中，优选的是，所述金属接触层为银、镍或铜中的一种。
本发明提供的太阳能电池上电极的制备方法，通过在电池芯片和电极之间沉积一层金属接触层，有效提升了银浆在电池上的附着力，同时改善了银浆与电池的接触电阻，增强了电池芯片的发电效率。
附图说明
下面结合附图对本发明的具体实施方式作进一步详细的说明。
图1为本发明一种实施例提供的太阳能电池上电极的制备方法的流程图；
图2为本发明另一种实施例提供的太阳能电池上电极的制备方法的流程图。
具体实施方式
下面详细描述本发明的实施例，所述实施例的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施例是示例性的，仅用于解释本发明，而不能解释为对本发明的限制。
如图1所示，本发明实施例提供了一种太阳能电池上电极的制备方法，其包括如下步骤：
S100、在晶体硅上沉积金属接触层。
S200、在金属接触层上通过丝网印刷工艺形成电极。
其中，步骤S100具体包括：在电池芯片上的透明导电层上沉积金属接触层。
在现有技术中，丝网印刷中的银浆直接印刷在透明导电层上，由于透明导电层为金属氧化物，银浆也并不是纯银，当丝网印刷后的银浆在后续的烘干过程中，银浆中的树脂挥发，导致银浆在透明导电层上的附着力不高，且两者间也并不是纯欧姆接触，导致接触电阻较大。而通过在晶体硅上的透明导电层上沉积一层金属接触层，将银浆通过丝网印刷工艺印刷在金属接触层上，可以保证金属接触层与透明导电层之间具有较强的结合力，同时银浆在丝网印刷过程中可以与金属接触层固化为一整体，从而增强了银浆与透明导电层之间的结合力，进而保证了电极成型的可靠性。此外，透明导电层的可以为ITO、AZO等，透明导电层为金属氧化物，金属接触层可以为纯金属，故金属接触层沉积到透明导电层上后，其界面产生的接触电阻可以忽略不计，从而提升了太阳能电池的发电性能。
对于通过丝网印刷工艺印刷电极的太阳能电池，均可以通过沉积该金属接触层来提升太阳能电池的发电性能。
在本实施例中，具体地，在晶体硅上的透明导电层上沉积金属接触层具体可以包括如下步骤：
S101、在晶体硅的正面和背面分别沉积本征非晶硅层。
S102、在晶体硅的正面和背面的本征非晶硅层上分别沉积N型非晶硅层和P型非晶硅层。
S103、在N型非晶硅层和P型非晶硅层上分别沉积透明导电层。
S104、在晶体硅的正面和背面的透明导电层上分别沉积金属接触层。
可以理解的是，为了提升金属接触层的导电性能，金属接触层可以为银、镍或铜中的一种。
需要说明的是，电极可以由银浆与树脂的混合物构成，树脂具有较强的附着力，此外，金属接触层具有一定的孔隙率，在丝网印刷过程中，银浆溶液中的部分树脂会渗入金属接触层，将金属接触层和电极固化为一整体，从而保证了电极与金属接触层之间连接的可靠性。
进一步地，如图2所示，在步骤S200之后还包括：
S210、采用化学腐蚀去除未被电极覆盖部分的金属接触层。
可以理解的是，电极通常只占透明导电层上的较小的一部分区域，而对于金属接触层，则需要沉积在透明导电层的整个表面上，因此，仅部分金属接触层上有丝网印刷的电极，那么对于非沉积区域上的金属接触层，由于不需要与银浆接触，故并不会起到实质性的积极作用，反而会影响电池芯片的透光性，降低电池芯片的发电效率。因此，为了解决该问题，在本实施例中，可以在丝网印刷银浆之后，采用化学腐蚀的方法去除未被电极覆盖部分的金属接触层，其中，未被电极覆盖部分的金属接触层即为非沉积区域上的金属接触层。
需要说明的是，金属接触层的厚度范围值可以为2～9nm，在本实施例中，金属接触层厚度优选为5nm，而电极的厚度一般为微米级别，故金属接触层与电极的厚度尺寸相差极大，当通过化学腐蚀的方法去除非沉积区域上的金属接触层后，沉积区域的电极上仅被腐蚀掉极薄的一层，对于厚度尺寸在微米级别的电极而言，去除掉的这一层可以忽略不计。
其中，在步骤S210之前还包括：
S20、烘干经过丝网印刷工艺形成的电极。
由于银浆溶液中混合有树脂，当在丝网印刷后烘干丝网印刷的银浆时，可以使银浆溶液中的部分树脂蒸发，进而使银浆溶液凝固固化，使银浆与金属接触层固化为一整体。其中，烘干温度可以为150℃～250℃，其中，烘干温度优选为200℃，在此温度下可以加快树脂蒸发，进而加快银浆的凝固速度，同时又不会因高温而伤害晶体硅上的膜层。
金属接触层可以采用物理气相沉积(PVD)工艺来制备，物理气相沉积的主要方法有：真空蒸镀、溅射镀膜、电弧等离子体镀以及离子镀膜等，具体地，在本实施例中，金属接触层可以采用PVD工艺中的磁控溅射法沉积，其溅射功率为2.5W/cm2，溅射压强为0.2Pa，溅射气体为高纯度的氩气，由此可以在较低的温度条件下实现金属接触层的高速沉积。
需要说明的是，溅射金属接触层过程中会造成轻微界面等离子体损伤，而为了修复该损伤，在步骤S100之后还可以包括：
S110、采用低温热注入或低温光注入退火方式修复金属接触层。
除了采用PVD工艺来制备金属接触层以外，还可以采用电镀法制备金属接触层，具体地制备方法可以根据实际的生产加工情况来选择，对此本实施例不作限定。
本发明实施例提供的太阳能电池上电极的制备方法，通过在电池芯片和电极之间沉积一层金属接触层，有效提升了银浆在电池上的附着力，同时改善了银浆与电池的接触电阻，增强了电池芯片的发电效率。
以上依据图式所示的实施例详细说明了本发明的构造、特征及作用效果，以上所述仅为本发明的较佳实施例，但本发明不以图面所示限定实施范围，凡是依照本发明的构想所作的改变，或修改为等同变化的等效实施例，仍未超出说明书与图示所涵盖的精神时，均应在本发明的保护范围内。

Claims (12)

1.一种太阳能电池上电极的制备方法，其特征在于，包括如下步骤：
在晶体硅上沉积金属接触层；
在所述金属接触层上通过丝网印刷工艺形成电极。
2.根据权利要求1所述的太阳能电池上电极的制备方法，其特征在于，在晶体硅上沉积金属接触层具体包括：
在晶体硅上的透明导电层上沉积金属接触层。
3.根据权利要求2所述的太阳能电池上电极的制备方法，其特征在于，在晶体硅上的透明导电层上沉积金属接触层具体包括：
在所述晶体硅的正面和背面分别沉积本征非晶硅层；
在所述晶体硅的正面和背面的所述本征非晶硅层上分别沉积N型非晶硅层和P型非晶硅层；
在所述N型非晶硅层和所述P型非晶硅层上分别沉积透明导电层；
在所述晶体硅的正面和背面的所述透明导电层上分别沉积金属接触层。
4.根据权利要求1所述的太阳能电池上电极的制备方法，其特征在于，在所述金属接触层上通过丝网印刷工艺形成电极之后还包括：
采用化学腐蚀去除未被所述电极覆盖部分的所述金属接触层。
5.根据权利要求4所述的太阳能电池上电极的制备方法，其特征在于，在采用化学腐蚀去除未被所述电极覆盖部分的所述金属接触层之前还包括：
烘干经过所述丝网印刷工艺形成的所述电极。
6.根据权利要求5所述的太阳能电池上电极的制备方法，其特征在于，烘干温度为150℃～250℃。
7.根据权利要求4所述的太阳能电池上电极的制备方法，其特征在于，所述金属接触层的厚度范围值为2～9nm。
8.根据权利要求1所述的太阳能电池上电极的制备方法，其特征在于，所述电极由银浆与树脂的混合物构成。
9.根据权利要求1所述的太阳能电池上电极的制备方法，其特征在于，在晶体硅上沉积金属接触层具体包括：
采用物理气相沉积工艺制备所述金属接触层。
10.根据权利要求9所述的太阳能电池上电极的制备方法，其特征在于，在晶体硅上沉积金属接触层之后还包括：
采用低温热注入或低温光注入退火方式修复所述金属接触层。
11.根据权利要求1所述的太阳能电池上电极的制备方法，其特征在于，在晶体硅上沉积金属接触层具体包括：
采用电镀法制备所述金属接触层。
12.根据权利要求1所述的太阳能电池上电极的制备方法，其特征在于，所述金属接触层为银、镍或铜中的一种。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019095695A1 (zh) * 2017-11-15 2019-05-23 君泰创新（北京）科技有限公司 太阳能电池和其上的复合电极及其制备方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103107212A (zh) * 2013-02-01 2013-05-15 中国科学院上海微系统与信息技术研究所 具有电镀电极的异质结太阳电池及制备方法
CN103137791A (zh) * 2013-03-13 2013-06-05 中国科学院上海微系统与信息技术研究所 湿法沉积和低温热处理相结合制备异质结太阳电池方法
CN103367468A (zh) * 2012-03-29 2013-10-23 无锡尚德太阳能电力有限公司 一种太阳电池、组件及太阳电池电极的制造方法
CN105070771A (zh) * 2015-08-06 2015-11-18 南昌大学 一种晶体硅异质结太阳电池进光面用的金属电极及其制备方法
CN106601855A (zh) * 2015-10-14 2017-04-26 钧石(中国)能源有限公司 一种双面发电异质结太阳能电池的制备方法
WO2017143901A1 (en) * 2016-02-22 2017-08-31 Henkel Ag & Co. Kgaa Electrically conductive composition and applications for said composition

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090255574A1 (en) * 2008-04-14 2009-10-15 Sierra Solar Power, Inc. Solar cell fabricated by silicon liquid-phase deposition
US9773928B2 (en) * 2010-09-10 2017-09-26 Tesla, Inc. Solar cell with electroplated metal grid
US9276163B2 (en) * 2010-10-14 2016-03-01 Kaneka Corporation Method for manufacturing silicon-based solar cell
CN103022236A (zh) * 2011-09-26 2013-04-03 吉富新能源科技(上海)有限公司 微晶硅薄膜太阳能电池的真空热退火处理背电极技术
JP5863391B2 (ja) * 2011-10-28 2016-02-16 株式会社カネカ 結晶シリコン系太陽電池の製造方法
US20130125968A1 (en) * 2011-11-18 2013-05-23 Sunpreme, Ltd. Low-cost solar cell metallization over tco and methods of their fabrication
KR101423018B1 (ko) * 2012-04-25 2014-07-24 카네카 코포레이션 태양 전지 및 그 제조 방법, 그리고 태양 전지 모듈
CN104157726B (zh) * 2013-05-15 2017-04-12 茂迪股份有限公司 太阳能电池及其制造方法
MY172480A (en) * 2013-05-29 2019-11-26 Kaneka Corp Solar cell, manufacturing method thereof, solar-cell module, and manufacturing method thereof
JP6491602B2 (ja) * 2013-10-30 2019-03-27 株式会社カネカ 太陽電池の製造方法、および太陽電池モジュールの製造方法
JP6345968B2 (ja) * 2014-03-31 2018-06-20 株式会社カネカ 太陽電池の製造方法
CN107112378B (zh) * 2015-01-07 2020-02-14 株式会社钟化 太阳能电池及其制造方法、以及太阳能电池模块
US20170104111A1 (en) * 2015-10-07 2017-04-13 Industrial Technology Research Institute Solar cell structure and method for manufacturing the same
KR20170070721A (ko) * 2015-12-14 2017-06-22 주식회사 엘지화학 원통형 페로브스카이트 태양 전지
CN108039378A (zh) * 2017-11-15 2018-05-15 君泰创新（北京）科技有限公司 太阳能电池上电极的制备方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103367468A (zh) * 2012-03-29 2013-10-23 无锡尚德太阳能电力有限公司 一种太阳电池、组件及太阳电池电极的制造方法
CN103107212A (zh) * 2013-02-01 2013-05-15 中国科学院上海微系统与信息技术研究所 具有电镀电极的异质结太阳电池及制备方法
CN103137791A (zh) * 2013-03-13 2013-06-05 中国科学院上海微系统与信息技术研究所 湿法沉积和低温热处理相结合制备异质结太阳电池方法
CN105070771A (zh) * 2015-08-06 2015-11-18 南昌大学 一种晶体硅异质结太阳电池进光面用的金属电极及其制备方法
CN106601855A (zh) * 2015-10-14 2017-04-26 钧石(中国)能源有限公司 一种双面发电异质结太阳能电池的制备方法
WO2017143901A1 (en) * 2016-02-22 2017-08-31 Henkel Ag & Co. Kgaa Electrically conductive composition and applications for said composition

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019095695A1 (zh) * 2017-11-15 2019-05-23 君泰创新（北京）科技有限公司 太阳能电池和其上的复合电极及其制备方法

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