CN108028259B - 成像元件、成像元件的制造方法、成像装置以及成像装置的制造方法 - Google Patents
成像元件、成像元件的制造方法、成像装置以及成像装置的制造方法 Download PDFInfo
- Publication number
- CN108028259B CN108028259B CN201680052715.9A CN201680052715A CN108028259B CN 108028259 B CN108028259 B CN 108028259B CN 201680052715 A CN201680052715 A CN 201680052715A CN 108028259 B CN108028259 B CN 108028259B
- Authority
- CN
- China
- Prior art keywords
- layer
- light
- imaging
- photoelectric conversion
- imaging device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000003384 imaging method Methods 0.000 title claims abstract description 487
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 74
- 238000000034 method Methods 0.000 title claims abstract description 74
- 238000006243 chemical reaction Methods 0.000 claims abstract description 196
- 239000000758 substrate Substances 0.000 claims abstract description 112
- 239000004020 conductor Substances 0.000 claims abstract description 59
- 230000031700 light absorption Effects 0.000 claims description 37
- 230000010287 polarization Effects 0.000 claims description 33
- 230000003287 optical effect Effects 0.000 claims description 16
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 13
- 230000002093 peripheral effect Effects 0.000 claims description 13
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 11
- 229910052721 tungsten Inorganic materials 0.000 claims description 11
- 239000010937 tungsten Substances 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 239000010410 layer Substances 0.000 description 728
- 239000010408 film Substances 0.000 description 50
- 239000000463 material Substances 0.000 description 27
- 238000010586 diagram Methods 0.000 description 18
- 230000004048 modification Effects 0.000 description 17
- 238000012986 modification Methods 0.000 description 17
- 230000001681 protective effect Effects 0.000 description 16
- 239000007769 metal material Substances 0.000 description 14
- 239000004065 semiconductor Substances 0.000 description 13
- 239000010949 copper Substances 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 11
- 239000010936 titanium Substances 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 230000035945 sensitivity Effects 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- 239000000956 alloy Substances 0.000 description 8
- 230000005684 electric field Effects 0.000 description 8
- 239000010931 gold Substances 0.000 description 8
- 239000011135 tin Substances 0.000 description 8
- 239000011810 insulating material Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000000059 patterning Methods 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 230000004075 alteration Effects 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 230000002238 attenuated effect Effects 0.000 description 4
- 230000008033 biological extinction Effects 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 229910010272 inorganic material Inorganic materials 0.000 description 4
- 239000011147 inorganic material Substances 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000001771 vacuum deposition Methods 0.000 description 4
- 239000004925 Acrylic resin Substances 0.000 description 3
- 229920000178 Acrylic resin Polymers 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- -1 SiOC Inorganic materials 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 229920000090 poly(aryl ether) Polymers 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- 229910052714 tellurium Inorganic materials 0.000 description 3
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 3
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 229910004541 SiN Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 125000004122 cyclic group Chemical group 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910006585 β-FeSi Inorganic materials 0.000 description 2
- BLIQUJLAJXRXSG-UHFFFAOYSA-N 1-benzyl-3-(trifluoromethyl)pyrrolidin-1-ium-3-carboxylate Chemical compound C1C(C(=O)O)(C(F)(F)F)CCN1CC1=CC=CC=C1 BLIQUJLAJXRXSG-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910018626 Al(OH) Inorganic materials 0.000 description 1
- 229910016066 BaSi Inorganic materials 0.000 description 1
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical class C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 1
- 229910019001 CoSi Inorganic materials 0.000 description 1
- 229910019974 CrSi Inorganic materials 0.000 description 1
- 229910005329 FeSi 2 Inorganic materials 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910017639 MgSi Inorganic materials 0.000 description 1
- 229910005881 NiSi 2 Inorganic materials 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- 229910020177 SiOF Inorganic materials 0.000 description 1
- 238000001015 X-ray lithography Methods 0.000 description 1
- 230000002730 additional effect Effects 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 150000008378 aryl ethers Chemical class 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000000671 immersion lithography Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000003331 infrared imaging Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000010183 spectrum analysis Methods 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- QRPMCZNLJXJVSG-UHFFFAOYSA-N trichloro(1,1,2,2,3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,10-henicosafluorodecyl)silane Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)[Si](Cl)(Cl)Cl QRPMCZNLJXJVSG-UHFFFAOYSA-N 0.000 description 1
- PYJJCSYBSYXGQQ-UHFFFAOYSA-N trichloro(octadecyl)silane Chemical compound CCCCCCCCCCCCCCCCCC[Si](Cl)(Cl)Cl PYJJCSYBSYXGQQ-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/182—Colour image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/191—Photoconductor image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/199—Back-illuminated image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8053—Colour filters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8057—Optical shielding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8063—Microlenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8067—Reflectors
Landscapes
- Polarising Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015-202659 | 2015-10-14 | ||
| JP2015202659A JP6668036B2 (ja) | 2015-10-14 | 2015-10-14 | 撮像素子及びその製造方法、並びに、撮像装置及びその製造方法 |
| PCT/JP2016/004434 WO2017064844A1 (en) | 2015-10-14 | 2016-09-30 | Imaging element, method of manufacturing imaging element, imaging device, and method of manufacturing imaging device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108028259A CN108028259A (zh) | 2018-05-11 |
| CN108028259B true CN108028259B (zh) | 2022-05-17 |
Family
ID=57138096
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201680052715.9A Active CN108028259B (zh) | 2015-10-14 | 2016-09-30 | 成像元件、成像元件的制造方法、成像装置以及成像装置的制造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US10930691B2 (enExample) |
| JP (1) | JP6668036B2 (enExample) |
| KR (1) | KR102633229B1 (enExample) |
| CN (1) | CN108028259B (enExample) |
| WO (1) | WO2017064844A1 (enExample) |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6668036B2 (ja) | 2015-10-14 | 2020-03-18 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子及びその製造方法、並びに、撮像装置及びその製造方法 |
| JP6754157B2 (ja) * | 2015-10-26 | 2020-09-09 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置 |
| US10451949B2 (en) | 2016-10-10 | 2019-10-22 | Gentex Corporation | Polarized window assembly |
| JP6833597B2 (ja) * | 2017-04-11 | 2021-02-24 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置 |
| JP6987529B2 (ja) | 2017-05-15 | 2022-01-05 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子、撮像素子の製造方法、電子機器、及び、撮像モジュール |
| WO2018211813A1 (ja) * | 2017-05-16 | 2018-11-22 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子、及び、撮像素子を備えた電子機器 |
| JP2019047392A (ja) * | 2017-09-05 | 2019-03-22 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子及び固体撮像装置 |
| US10367020B2 (en) * | 2017-11-15 | 2019-07-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Polarizers for image sensor devices |
| DE102018124442A1 (de) | 2017-11-15 | 2019-05-16 | Taiwan Semiconductor Manufacturing Co. Ltd. | Polarisatoren für Bildsensorvorrichtungen |
| US11646333B2 (en) | 2017-12-14 | 2023-05-09 | Sony Semiconductor Solutions Corporation | Imaging element and imaging device for improving accuracy of polarization information |
| JP2019134229A (ja) * | 2018-01-29 | 2019-08-08 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子および撮像装置 |
| JP2019179783A (ja) * | 2018-03-30 | 2019-10-17 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子 |
| EP3867089B1 (en) | 2018-10-21 | 2023-12-13 | Gentex Corporation | Electro-optic window assembly |
| WO2020144584A1 (en) | 2019-01-07 | 2020-07-16 | Gentex Corporation | Variable transmittance window assembly |
| KR102651605B1 (ko) | 2019-01-11 | 2024-03-27 | 삼성전자주식회사 | 이미지 센서 |
| WO2020179290A1 (ja) * | 2019-03-06 | 2020-09-10 | ソニーセミコンダクタソリューションズ株式会社 | センサおよび測距装置 |
| CN110058341A (zh) * | 2019-04-23 | 2019-07-26 | Oppo广东移动通信有限公司 | 一种彩色滤波片和cis制备方法 |
| JP7301601B2 (ja) * | 2019-05-24 | 2023-07-03 | キヤノン株式会社 | 画像処理装置、撮像装置、レンズ装置、画像処理システム、画像処理方法、および、プログラム |
| JP7573539B2 (ja) | 2019-10-07 | 2024-10-25 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置及び電子機器 |
| US11088196B2 (en) * | 2019-11-15 | 2021-08-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Metal reflector grounding for noise reduction in light detector |
| US11515437B2 (en) * | 2019-12-04 | 2022-11-29 | Omnivision Technologies, Inc. | Light sensing system and light sensor with polarizer |
| US11139164B2 (en) * | 2019-12-12 | 2021-10-05 | Raytheon Company | Electronic device including hermetic micro-cavity and methods of preparing the same |
| JP7551301B2 (ja) | 2020-02-25 | 2024-09-17 | キヤノン株式会社 | 撮像装置 |
| CN115668516A (zh) * | 2020-06-04 | 2023-01-31 | 浜松光子学株式会社 | 半导体光检测元件 |
| JPWO2021261295A1 (enExample) * | 2020-06-25 | 2021-12-30 | ||
| US20240170515A1 (en) | 2021-03-31 | 2024-05-23 | Sony Semiconductor Solutions Corporation | Photodetection device and electronic device |
| KR20230034719A (ko) * | 2021-09-03 | 2023-03-10 | 에스케이하이닉스 주식회사 | 이미지 센싱 장치 |
| US12356745B2 (en) * | 2021-11-30 | 2025-07-08 | Visera Technologies Company Ltd. | Optical device |
| DE102022205949A1 (de) * | 2022-06-13 | 2023-12-14 | Zf Friedrichshafen Ag | Sensorvorrichtung, insbesondere für Fahrzeugkameras |
| US20250072145A1 (en) * | 2023-08-24 | 2025-02-27 | Pixart Imaging Inc. | Optical sensing system and light gating layer |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011176297A (ja) * | 2010-01-27 | 2011-09-08 | Ricoh Co Ltd | 撮像モジュール及びその製造方法並びに撮像装置 |
| CN202454558U (zh) * | 2010-09-07 | 2012-09-26 | 索尼公司 | 固体摄影装置及摄影设备 |
| CN102779823A (zh) * | 2011-05-10 | 2012-11-14 | 索尼公司 | 固体摄像装置、固体摄像装置的制造方法及电子设备 |
| CN104253054A (zh) * | 2013-06-26 | 2014-12-31 | 索尼公司 | 半导体装置 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003143488A (ja) * | 2001-11-02 | 2003-05-16 | Olympus Optical Co Ltd | 撮像装置 |
| JP2008177191A (ja) | 2007-01-16 | 2008-07-31 | Matsushita Electric Ind Co Ltd | 固体撮像装置およびそれを用いたカメラ |
| JP2010072591A (ja) * | 2008-09-22 | 2010-04-02 | Fujifilm Corp | 偏光素子、及びその製造方法 |
| KR101776955B1 (ko) * | 2009-02-10 | 2017-09-08 | 소니 주식회사 | 고체 촬상 장치와 그 제조 방법, 및 전자 기기 |
| JP5682312B2 (ja) * | 2011-01-05 | 2015-03-11 | ソニー株式会社 | 固体撮像装置の製造方法 |
| JP5799264B2 (ja) * | 2013-02-15 | 2015-10-21 | パナソニックＩｐマネジメント株式会社 | 画像処理装置および内視鏡 |
| WO2015049981A1 (ja) * | 2013-10-03 | 2015-04-09 | シャープ株式会社 | 光電変換装置 |
| JP6668036B2 (ja) | 2015-10-14 | 2020-03-18 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子及びその製造方法、並びに、撮像装置及びその製造方法 |
-
2015
- 2015-10-14 JP JP2015202659A patent/JP6668036B2/ja active Active
-
2016
- 2016-09-30 CN CN201680052715.9A patent/CN108028259B/zh active Active
- 2016-09-30 US US15/766,587 patent/US10930691B2/en active Active
- 2016-09-30 WO PCT/JP2016/004434 patent/WO2017064844A1/en not_active Ceased
- 2016-09-30 KR KR1020187006469A patent/KR102633229B1/ko active Active
-
2020
- 2020-11-05 US US17/090,009 patent/US11652122B2/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011176297A (ja) * | 2010-01-27 | 2011-09-08 | Ricoh Co Ltd | 撮像モジュール及びその製造方法並びに撮像装置 |
| CN202454558U (zh) * | 2010-09-07 | 2012-09-26 | 索尼公司 | 固体摄影装置及摄影设备 |
| CN102779823A (zh) * | 2011-05-10 | 2012-11-14 | 索尼公司 | 固体摄像装置、固体摄像装置的制造方法及电子设备 |
| CN104253054A (zh) * | 2013-06-26 | 2014-12-31 | 索尼公司 | 半导体装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6668036B2 (ja) | 2020-03-18 |
| KR102633229B1 (ko) | 2024-02-05 |
| US10930691B2 (en) | 2021-02-23 |
| US20210057475A1 (en) | 2021-02-25 |
| US11652122B2 (en) | 2023-05-16 |
| CN108028259A (zh) | 2018-05-11 |
| US20180286908A1 (en) | 2018-10-04 |
| KR20180068953A (ko) | 2018-06-22 |
| WO2017064844A1 (en) | 2017-04-20 |
| JP2017076683A (ja) | 2017-04-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108028259B (zh) | 成像元件、成像元件的制造方法、成像装置以及成像装置的制造方法 | |
| US10861893B2 (en) | Imaging element and imaging apparatus | |
| CN110546763B (zh) | 成像器件和电子装置 | |
| TWI451565B (zh) | 二維固態影像捕捉裝置及其偏振光資料處理方法 | |
| CN102402106B (zh) | 固体摄影元件、装置、设备及偏振元件的制造方法 | |
| US12408458B2 (en) | Photoelectric conversion element and light receiving device | |
| WO2020100431A1 (ja) | 受光装置 | |
| JP2018182022A5 (enExample) | ||
| WO2022091622A1 (ja) | 受光装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |