JP6668036B2 - 撮像素子及びその製造方法、並びに、撮像装置及びその製造方法 - Google Patents

撮像素子及びその製造方法、並びに、撮像装置及びその製造方法 Download PDF

Info

Publication number
JP6668036B2
JP6668036B2 JP2015202659A JP2015202659A JP6668036B2 JP 6668036 B2 JP6668036 B2 JP 6668036B2 JP 2015202659 A JP2015202659 A JP 2015202659A JP 2015202659 A JP2015202659 A JP 2015202659A JP 6668036 B2 JP6668036 B2 JP 6668036B2
Authority
JP
Japan
Prior art keywords
layer
light
photoelectric conversion
conversion unit
layer forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2015202659A
Other languages
English (en)
Japanese (ja)
Other versions
JP2017076683A5 (enExample
JP2017076683A (ja
Inventor
山崎　知洋
知洋 山崎
丸山　康
康 丸山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
Original Assignee
Sony Semiconductor Solutions Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2015202659A priority Critical patent/JP6668036B2/ja
Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Priority to CN201680052715.9A priority patent/CN108028259B/zh
Priority to US15/766,587 priority patent/US10930691B2/en
Priority to PCT/JP2016/004434 priority patent/WO2017064844A1/en
Priority to KR1020187006469A priority patent/KR102633229B1/ko
Publication of JP2017076683A publication Critical patent/JP2017076683A/ja
Publication of JP2017076683A5 publication Critical patent/JP2017076683A5/ja
Application granted granted Critical
Publication of JP6668036B2 publication Critical patent/JP6668036B2/ja
Priority to US17/090,009 priority patent/US11652122B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors

Landscapes

  • Polarising Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2015202659A 2015-10-14 2015-10-14 撮像素子及びその製造方法、並びに、撮像装置及びその製造方法 Active JP6668036B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2015202659A JP6668036B2 (ja) 2015-10-14 2015-10-14 撮像素子及びその製造方法、並びに、撮像装置及びその製造方法
US15/766,587 US10930691B2 (en) 2015-10-14 2016-09-30 Imaging element, method of manufacturing imaging element, imaging device, and method of manufacturing imaging device
PCT/JP2016/004434 WO2017064844A1 (en) 2015-10-14 2016-09-30 Imaging element, method of manufacturing imaging element, imaging device, and method of manufacturing imaging device
KR1020187006469A KR102633229B1 (ko) 2015-10-14 2016-09-30 촬상소자 및 촬상소자의 제조 방법, 촬상장치, 및 촬상장치의 제조 방법
CN201680052715.9A CN108028259B (zh) 2015-10-14 2016-09-30 成像元件、成像元件的制造方法、成像装置以及成像装置的制造方法
US17/090,009 US11652122B2 (en) 2015-10-14 2020-11-05 Imaging element, method of manufacturing imaging element, imaging device, and method of manufacturing imaging device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015202659A JP6668036B2 (ja) 2015-10-14 2015-10-14 撮像素子及びその製造方法、並びに、撮像装置及びその製造方法

Publications (3)

Publication Number Publication Date
JP2017076683A JP2017076683A (ja) 2017-04-20
JP2017076683A5 JP2017076683A5 (enExample) 2018-10-11
JP6668036B2 true JP6668036B2 (ja) 2020-03-18

Family

ID=57138096

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015202659A Active JP6668036B2 (ja) 2015-10-14 2015-10-14 撮像素子及びその製造方法、並びに、撮像装置及びその製造方法

Country Status (5)

Country Link
US (2) US10930691B2 (enExample)
JP (1) JP6668036B2 (enExample)
KR (1) KR102633229B1 (enExample)
CN (1) CN108028259B (enExample)
WO (1) WO2017064844A1 (enExample)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6668036B2 (ja) 2015-10-14 2020-03-18 ソニーセミコンダクタソリューションズ株式会社 撮像素子及びその製造方法、並びに、撮像装置及びその製造方法
JP6754157B2 (ja) * 2015-10-26 2020-09-09 ソニーセミコンダクタソリューションズ株式会社 撮像装置
EP3485327B1 (en) * 2016-10-10 2021-11-24 Gentex Corporation Polarized window assembly
JP6833597B2 (ja) * 2017-04-11 2021-02-24 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置
JP6987529B2 (ja) 2017-05-15 2022-01-05 ソニーセミコンダクタソリューションズ株式会社 撮像素子、撮像素子の製造方法、電子機器、及び、撮像モジュール
JP7134952B2 (ja) 2017-05-16 2022-09-12 ソニーセミコンダクタソリューションズ株式会社 撮像素子、及び、撮像素子を備えた電子機器
JP2019047392A (ja) * 2017-09-05 2019-03-22 ソニーセミコンダクタソリューションズ株式会社 撮像素子及び固体撮像装置
US10367020B2 (en) * 2017-11-15 2019-07-30 Taiwan Semiconductor Manufacturing Co., Ltd. Polarizers for image sensor devices
DE102018124442A1 (de) 2017-11-15 2019-05-16 Taiwan Semiconductor Manufacturing Co. Ltd. Polarisatoren für Bildsensorvorrichtungen
US11646333B2 (en) 2017-12-14 2023-05-09 Sony Semiconductor Solutions Corporation Imaging element and imaging device for improving accuracy of polarization information
JP2019134229A (ja) * 2018-01-29 2019-08-08 ソニーセミコンダクタソリューションズ株式会社 撮像素子および撮像装置
JP2019179783A (ja) * 2018-03-30 2019-10-17 ソニーセミコンダクタソリューションズ株式会社 撮像素子
EP3867089B1 (en) 2018-10-21 2023-12-13 Gentex Corporation Electro-optic window assembly
DE202020005866U1 (de) 2019-01-07 2022-12-05 Gentex Corporation Fensteranordnung mit variabler Transmission
KR102651605B1 (ko) 2019-01-11 2024-03-27 삼성전자주식회사 이미지 센서
WO2020179290A1 (ja) * 2019-03-06 2020-09-10 ソニーセミコンダクタソリューションズ株式会社 センサおよび測距装置
CN110058341A (zh) * 2019-04-23 2019-07-26 Oppo广东移动通信有限公司 一种彩色滤波片和cis制备方法
JP7301601B2 (ja) 2019-05-24 2023-07-03 キヤノン株式会社 画像処理装置、撮像装置、レンズ装置、画像処理システム、画像処理方法、および、プログラム
CN114402435B (zh) * 2019-10-07 2025-07-15 索尼半导体解决方案公司 固态摄像装置和电子设备
US11088196B2 (en) 2019-11-15 2021-08-10 Taiwan Semiconductor Manufacturing Company, Ltd. Metal reflector grounding for noise reduction in light detector
US11515437B2 (en) * 2019-12-04 2022-11-29 Omnivision Technologies, Inc. Light sensing system and light sensor with polarizer
US11139164B2 (en) * 2019-12-12 2021-10-05 Raytheon Company Electronic device including hermetic micro-cavity and methods of preparing the same
JP7551301B2 (ja) 2020-02-25 2024-09-17 キヤノン株式会社 撮像装置
CN115668516A (zh) * 2020-06-04 2023-01-31 浜松光子学株式会社 半导体光检测元件
JPWO2021261295A1 (enExample) * 2020-06-25 2021-12-30
KR20230162602A (ko) 2021-03-31 2023-11-28 소니 세미컨덕터 솔루션즈 가부시키가이샤 광 검출 장치 및 전자 기기
KR20230034719A (ko) * 2021-09-03 2023-03-10 에스케이하이닉스 주식회사 이미지 센싱 장치
US12356745B2 (en) * 2021-11-30 2025-07-08 Visera Technologies Company Ltd. Optical device
DE102022205949A1 (de) * 2022-06-13 2023-12-14 Zf Friedrichshafen Ag Sensorvorrichtung, insbesondere für Fahrzeugkameras
US20250072145A1 (en) * 2023-08-24 2025-02-27 Pixart Imaging Inc. Optical sensing system and light gating layer

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003143488A (ja) * 2001-11-02 2003-05-16 Olympus Optical Co Ltd 撮像装置
JP2008177191A (ja) 2007-01-16 2008-07-31 Matsushita Electric Ind Co Ltd 固体撮像装置およびそれを用いたカメラ
JP2010072591A (ja) * 2008-09-22 2010-04-02 Fujifilm Corp 偏光素子、及びその製造方法
KR101776955B1 (ko) * 2009-02-10 2017-09-08 소니 주식회사 고체 촬상 장치와 그 제조 방법, 및 전자 기기
US8796798B2 (en) * 2010-01-27 2014-08-05 Ricoh Company, Ltd. Imaging module, fabricating method therefor, and imaging device
JP5682437B2 (ja) * 2010-09-07 2015-03-11 ソニー株式会社 固体撮像素子、固体撮像装置、撮像機器、及び、偏光素子の製造方法
JP5682312B2 (ja) 2011-01-05 2015-03-11 ソニー株式会社 固体撮像装置の製造方法
JP2012238632A (ja) 2011-05-10 2012-12-06 Sony Corp 固体撮像装置、固体撮像装置の製造方法、及び、電子機器
WO2014125529A1 (ja) * 2013-02-15 2014-08-21 パナソニック株式会社 画像処理装置および内視鏡
JP2015012005A (ja) * 2013-06-26 2015-01-19 ソニー株式会社 半導体装置
WO2015049981A1 (ja) * 2013-10-03 2015-04-09 シャープ株式会社 光電変換装置
JP6668036B2 (ja) 2015-10-14 2020-03-18 ソニーセミコンダクタソリューションズ株式会社 撮像素子及びその製造方法、並びに、撮像装置及びその製造方法

Also Published As

Publication number Publication date
CN108028259B (zh) 2022-05-17
CN108028259A (zh) 2018-05-11
KR102633229B1 (ko) 2024-02-05
US20210057475A1 (en) 2021-02-25
US20180286908A1 (en) 2018-10-04
US10930691B2 (en) 2021-02-23
KR20180068953A (ko) 2018-06-22
WO2017064844A1 (en) 2017-04-20
JP2017076683A (ja) 2017-04-20
US11652122B2 (en) 2023-05-16

Similar Documents

Publication Publication Date Title
JP6668036B2 (ja) 撮像素子及びその製造方法、並びに、撮像装置及びその製造方法
JP6903396B2 (ja) 撮像素子及び撮像装置
JP6833597B2 (ja) 固体撮像装置
TWI451565B (zh) 二維固態影像捕捉裝置及其偏振光資料處理方法
CN102402106B (zh) 固体摄影元件、装置、设备及偏振元件的制造方法
US12408458B2 (en) Photoelectric conversion element and light receiving device
WO2020100431A1 (ja) 受光装置
WO2022091622A1 (ja) 受光装置

Legal Events

Date Code Title Description
A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A712

Effective date: 20160720

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20160721

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20160721

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180831

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20180831

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20190708

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20190827

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20190920

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20200205

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20200226

R150 Certificate of patent or registration of utility model

Ref document number: 6668036

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150