CN108028213A - 用于毫秒退火系统的预热方法 - Google Patents
用于毫秒退火系统的预热方法 Download PDFInfo
- Publication number
- CN108028213A CN108028213A CN201680054053.9A CN201680054053A CN108028213A CN 108028213 A CN108028213 A CN 108028213A CN 201680054053 A CN201680054053 A CN 201680054053A CN 108028213 A CN108028213 A CN 108028213A
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- Prior art keywords
- temperature
- supporting plate
- wafer supporting
- heating
- millisecond annealing
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Classifications
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Radiation Pyrometers (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (20)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202111475512.XA CN114068368A (zh) | 2015-12-30 | 2016-12-13 | 用于毫秒退火系统的温度测量系统 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562272811P | 2015-12-30 | 2015-12-30 | |
US62/272,811 | 2015-12-30 | ||
PCT/US2016/066341 WO2017116685A1 (en) | 2015-12-30 | 2016-12-13 | Preheat processes for millisecond anneal system |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202111475512.XA Division CN114068368A (zh) | 2015-12-30 | 2016-12-13 | 用于毫秒退火系统的温度测量系统 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108028213A true CN108028213A (zh) | 2018-05-11 |
CN108028213B CN108028213B (zh) | 2021-12-21 |
Family
ID=59225960
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202111475512.XA Pending CN114068368A (zh) | 2015-12-30 | 2016-12-13 | 用于毫秒退火系统的温度测量系统 |
CN201680054053.9A Active CN108028213B (zh) | 2015-12-30 | 2016-12-13 | 用于毫秒退火系统的预热方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202111475512.XA Pending CN114068368A (zh) | 2015-12-30 | 2016-12-13 | 用于毫秒退火系统的温度测量系统 |
Country Status (6)
Country | Link |
---|---|
US (3) | US10727140B2 (zh) |
JP (3) | JP6772258B2 (zh) |
KR (1) | KR102177121B1 (zh) |
CN (2) | CN114068368A (zh) |
TW (1) | TWI744268B (zh) |
WO (1) | WO2017116685A1 (zh) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
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JP6864564B2 (ja) * | 2017-06-09 | 2021-04-28 | 株式会社Screenホールディングス | 熱処理方法 |
JP6944347B2 (ja) * | 2017-11-07 | 2021-10-06 | 株式会社Screenホールディングス | 熱処理装置および熱処理方法 |
JP7041594B2 (ja) * | 2018-06-20 | 2022-03-24 | 株式会社Screenホールディングス | 熱処理装置 |
JP7199888B2 (ja) * | 2018-09-20 | 2023-01-06 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
KR102221692B1 (ko) * | 2018-10-12 | 2021-03-03 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
JP7091222B2 (ja) * | 2018-10-23 | 2022-06-27 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
JP7091221B2 (ja) * | 2018-10-23 | 2022-06-27 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
JP7315331B2 (ja) * | 2019-01-28 | 2023-07-26 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
US20200286757A1 (en) * | 2019-03-08 | 2020-09-10 | Dsgi Technologies, Inc. | Apparatus for annealing semiconductor integrated circuit wafers |
JP7355641B2 (ja) * | 2019-12-24 | 2023-10-03 | 株式会社Screenホールディングス | 熱処理装置、および、熱処理方法 |
US12020958B2 (en) * | 2020-02-28 | 2024-06-25 | SCREEN Holdings Co., Ltd. | Light irradiation type heat treatment method |
JP7446881B2 (ja) * | 2020-03-23 | 2024-03-11 | 株式会社Screenホールディングス | 熱処理方法 |
JP7460394B2 (ja) * | 2020-02-28 | 2024-04-02 | 株式会社Screenホールディングス | 熱処理方法 |
CN111725100B (zh) * | 2020-06-16 | 2023-02-10 | 北京北方华创微电子装备有限公司 | 预热装置及预热方法 |
KR102662579B1 (ko) | 2021-02-24 | 2024-04-30 | 곽쾌열 | 간접 가열 및 냉각 방식 레토르트 살균장치 |
CN114823427A (zh) * | 2022-05-30 | 2022-07-29 | 北京北方华创微电子装备有限公司 | 半导体工艺设备及其预热腔室 |
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US20170194220A1 (en) | 2017-07-06 |
KR20180030231A (ko) | 2018-03-21 |
CN108028213B (zh) | 2021-12-21 |
US12027427B2 (en) | 2024-07-02 |
JP7051965B2 (ja) | 2022-04-11 |
KR102177121B1 (ko) | 2020-11-11 |
TWI744268B (zh) | 2021-11-01 |
US10727140B2 (en) | 2020-07-28 |
JP2018535542A (ja) | 2018-11-29 |
CN114068368A (zh) | 2022-02-18 |
JP6772258B2 (ja) | 2020-10-21 |
JP2022088561A (ja) | 2022-06-14 |
JP2021005727A (ja) | 2021-01-14 |
US20200350217A1 (en) | 2020-11-05 |
WO2017116685A1 (en) | 2017-07-06 |
US20240304502A1 (en) | 2024-09-12 |
TW201727750A (zh) | 2017-08-01 |
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