CN108010879A - 一种柔性阵列基板的制作方法及柔性阵列基板 - Google Patents
一种柔性阵列基板的制作方法及柔性阵列基板 Download PDFInfo
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Abstract
本发明提供一种柔性阵列基板的制作方法及柔性阵列基板,其包括:在基板上沉积第一石墨烯层,并进行图案化处理,形成栅极、扫描线;在基板、栅极、扫描线上形成第一绝缘层;在第一绝缘层上沉积金属氧化物半导体层,并进行图案化处理,形成导电沟道;在导电沟道、第一绝缘层上沉积第二石墨烯层,并进行图案化处理,形成源极、漏极、数据线;在基板、源极、漏极、数据线上形成第二绝缘层;以及在第二绝缘层上沉积碳纳米管层,并进行图案化处理,形成像素电极。本发明的柔性阵列基板的制作方法及柔性阵列基板,有效减弱了图像信号的延迟,提高显示质量;且采用金属氧化物半导体制成导电沟道,使其具有良好的透光性和柔性。
Description
技术领域
本发明涉及显示技术领域,尤其涉及一种柔性阵列基板的制作方法及柔性阵列基板。
背景技术
薄膜晶体管液晶显示器(Thin Film Transistor Liquid Crystal Display,简称TFT-LCD)具有体积小、功耗低、无辐射等特点,在当前的平板显示器市场中占据了主导地位。TFT-LCD一般包括背光源、上下偏光片、液晶盒、驱动与控制IC等部分,其中,核心部件是液晶盒。液晶盒一般采用阵列基板与彩膜基板对盒后灌入液晶(Liquid Crystal,LC)制成。
然而,随着TFT-LCD的飞速发展,TFT-LCD的尺寸不断增大、分辨率不断提高,进而造成图像信号的延迟越来越严重。图像信号的延迟主要由T=RC决定,其中R为信号电阻,C为相关电容,R一般与栅极、扫描线、数据线等阵列配线的材料有关;现有的阵列基板的制作方法中,一般采用化学性质稳定、电阻率高的金属材料制成栅极、扫描线、数据线等阵列配线,且随着TFT-LCD的飞速发展,TFT-LCD的尺寸不断增大、分辨率不断提高,从而使得图像信号的延迟更加严重。另外,随着人们对显示技术需求的不断提高,未来的显示装置向柔性、透明方向发展,但是现有的用于形成栅极、扫描线、数据线等阵列配线的材料具有不可透光性、且在弯曲时性能恶化,不能满足透明、柔性器件的需求。
故,有必要提供一种柔性阵列基板的制作方法,以解决现有技术所存在的问题。
发明内容
本发明的目的在于提供一种柔性阵列基板的制作方法,能有效减弱图像信号的延迟,进而提高显示质量,并且具有良好的透光性和柔性。
本发明提高一种柔性阵列基板的制作方法,所述制备方法包括:
提供一基板;
在所述基板上沉积第一石墨烯层,对所述第一石墨烯层进行图案化处理,形成栅极、扫描线;
在所述基板、栅极、扫描线上形成第一绝缘层;
在所述第一绝缘层上沉积金属氧化物半导体层,对所述金属氧化物半导体层进行图案化处理,形成导电沟道;
在所述导电沟道、第一绝缘层上沉积第二石墨烯层,对所述第二石墨烯层进行图案化处理,形成源极、漏极、数据线,其中,所述导电沟道与所述源极、所述漏极相连接;
在所述基板、源极、漏极、数据线上形成第二绝缘层;以及
在所述第二绝缘层上沉积碳纳米管层,对所述碳纳米管层进行图案化处理,形成像素电极,所述像素电极通过通孔与所述漏极相连接。
在本发明的柔性阵列基板的制作方法中,所述基板为透明玻璃基板或塑料基板。
在本发明的柔性阵列基板的制作方法中,所述第一绝缘层包括第三绝缘层以及位于所述第三绝缘层上的第四绝缘层,其中,所述第三绝缘层采用的材料为有机树脂,所述第四绝缘层采用的材料为氧化物、氮化物或氮氧化合物。
在本发明的柔性阵列基板的制作方法中,所述金属氧化物半导体层的厚度介于50埃-2000埃之间。
在本发明的柔性阵列基板的制作方法中,所述第二绝缘层的材料为有机树脂。
在本发明的柔性阵列基板的制作方法中,所述第二绝缘层的厚度介于4000埃-30000埃之间。
在本发明的柔性阵列基板的制作方法中,所述金属氧化物半导体层为非晶铟镓锌氧化物。
在本发明的柔性阵列基板的制作方法中,可通过化学气相沉积法或旋涂法沉积所述第一石墨烯层和所述第二石墨烯层。
依据本发明的上述目的,还提供一种柔性阵列基板,包括:
基板、设置在所述基板上的栅极和扫描线、设置在所述栅极和扫描线上的第一绝缘层、设置在所述第一绝缘层上的导电沟道、设置在所述导电沟道上的源极、漏极和数据线、设置在所述源极、漏极和数据线上的第二绝缘层、及设置在所述第二绝缘层上的像素电极,且所述导电沟道与所述源极、所述漏极连接,所述像素电极通过通孔与所述漏极相连接;其中,
所述栅极和扫描线经第一石墨烯层图案化处理后形成;所述导电沟道经金属氧化物半导体层图案化处理形成;所述源极、漏极和数据线经第二石墨烯层图案化处理形成;所述像素电极经碳纳米管层图案化处理形成。
本发明的柔性阵列基板的制作方法及柔性阵列基板,采用石墨烯材料制成栅极、扫描线、源极、漏极以及数据线,有效减弱了图像信号的延迟,提高显示质量;且采用金属氧化物半导体制成导电沟道,使其具有良好的透光性和柔性。
为让本发明的上述内容能更明显易懂,下文特举优选实施例,并配合所附图式,作详细说明如下:
附图说明
下下面结合附图,通过对本发明的具体实施方式详细描述,将使本发明的技术方案及其它有益效果显而易见。
图1为本发明优选实施例提供的柔性阵列基板的制作方法的流程图;
图2A-2L为本发明优选实施例提供的阵列基板的制作方法的具体步骤示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果,以下结合本发明的优选实施例及其附图进行详细描述。显然,所描述的实施例仅仅是本发明的一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
下面对石墨烯材料以及金属氧化物半导体材料在本发明的阵列基板的制作方法中的应用做进一步的说明。
本发明的阵列基板的制作方法中采用的石墨烯是一种由碳原子以sp2杂化轨道组成六角型呈蜂巢晶格的平面薄膜,只有一个碳原子厚度的二维材料,是目前世界上最薄却也是最坚硬的纳米材料,近乎是完全透明的。例如厚度为0.34纳米的单层石墨烯薄膜只吸收2.3%的光,透光率高。另外,其导热系数高达5300W/m·K,高于碳纳米管和金刚石;且常温下其电子迁移率超过15000cm2/(V·s),比纳米碳管或晶体硅高;而电阻率只有约6~10Ω·cm,比铜或银等金属更低,为目前世界上电阻率最小的材料。因此,石墨烯作为一种透明、柔性的导体,可以满足大尺寸柔性TFT-LCD的需求。本发明的阵列基板的制作方法,采用石墨烯材料制成栅极、扫描线、源极、漏极以及数据线,从而减弱图像信号在栅极、扫描线、源极、漏极和数据线上的延迟,进而提高显示质量,且具有良好的透光性和柔性。
另外,本发明的阵列基板的制作方法还采用金属氧化物半导体材料制作导电沟道,该金属氧化物半导体材料可为:非晶铟镓锌氧化物,其载流子迁移率高,可以提高薄膜晶体管对像素电极的充放电速率,提高像素的响应速度,且均一性良好,可以更好的满足大尺寸柔性TFT-LCD的需求。
下面对本发明的阵列基板的制作方法进行详细的描述。参阅图1,图1为本发明优选实施例提供的柔性阵列基板的制作方法的流程图。如图1所示,本发明优选实施例提供一种柔性阵列基板的制作方法,该方法包括以下步骤:
步骤S101,提供一基板;
步骤S102,在所述基板上沉积第一石墨烯层,对所述第一石墨烯层进行图案化处理,形成栅极、扫描线;
步骤S103,在所述基板、栅极、扫描线上形成第一绝缘层;
步骤S104,在所述第一绝缘层上沉积金属氧化物半导体层,对所述金属氧化物半导体层进行图案化处理,形成导电沟道;
步骤S105,在所述导电沟道、第一绝缘层上沉积第二石墨烯层,对所述第二石墨烯层进行图案化处理,形成源极、漏极、数据线,其中,所述导电沟道与所述源极、所述漏极相连接;
步骤S106,在所述基板、源极、漏极、数据线上形成第二绝缘层;
步骤S107,在所述第二绝缘层上沉积碳纳米管层,对所述碳纳米管层进行图案化处理,形成像素电极,所述像素电极通过通孔与所述漏极相连接。
下面结合图2A-2L对本优选实施例的具体步骤进行详细说明。图2A-2L为本发明优选实施例提供的阵列基板的制作方法的具体步骤示意图。
如图2A所示,在步骤S101中,提供一基板201,需要说明的是,该基板201可为透明玻璃基板或塑料基板,其中,若选用透明基板,应保证该透明玻璃基板的厚度小于0.1毫米;若选用塑料基板,该塑料基板的材料可为聚酰亚胺。
在步骤S102中,如图2B所示,在基板201上沉积第一石墨烯层202,首先在基板201上利用化学气相沉积法或者旋涂法涂覆一层石墨烯材料。随后,如图2C所示,通过构图工艺形成包括栅极2021、扫描线2022的第一石墨烯层的图案。
在步骤S103中,在第一石墨烯层202上形成第一绝缘层203,该第一绝缘层203用于隔离第一石墨烯层202。具体的,该第一绝缘层203包括包括第三绝缘层2031以及位于第三绝缘层2031上的第四绝缘层2032,其中,第三绝缘层2031采用的材料为有机树脂,第四绝缘层2032采用的材料为氧化物、氮化物或氮氧化合物。
具体的,如图2D所示,首先在第一石墨烯层202上通过旋涂法涂覆第三绝缘层2031;随后,在第三绝缘层2031上通过化学气相沉积法沉积第四绝缘层2032,其中第四绝缘层2032的厚度介于100埃-1000埃之间。
在步骤S104中,如图2E所示,在第一绝缘层上沉积金属氧化物半导体层204,其中,可通过溅射法形成该金属氧化物半导体层204,该金属氧化物半导体层204的厚度介于50埃-2000埃之间,优选的,该金属氧化物半导体层204可为非晶铟镓锌氧化物;随后,如图2F所示,通过构图工艺形成导电沟道2041。
在步骤S105中,如图2G所示,在金属氧化物半导体层204上沉积第二石墨烯层205,首先在金属氧化物半导体层204上利用化学气相沉积法或者旋涂法涂覆一层石墨烯材料。随后,如图2H所示,通过构图工艺形成包括源极2051、漏极2052、数据线2053的第二石墨烯层的图案,其中,导电沟道2041与源极2051、漏极2052相连接。
在步骤S106中,如图2I所示,在第二石墨烯层205上形成第二绝缘层206,其中该第二绝缘层206的材料为有机树脂,且该第二绝缘层206的厚度介于4000埃-30000埃之间。
在步骤S107中,在第二绝缘层206上沉积碳纳米管层207,并通过构图工艺形成像素电极2071,其中,像素电极2071通过通孔2072与漏极2052相连接。
具体的,如图2J所示,首先在在第二绝缘层206上形成一通孔2072;随后,如图2K所示,在第二绝缘层206上沉积碳纳米管层207;最后,如图2L所示,通过构图工艺形成像素电极2071,其中,像素电极2071通过通孔2072与漏极2052相连接。
通过上述方法可制得柔性阵列基板。
本优先实施例的柔性阵列基板的制作方法,采用石墨烯材料制成栅极、扫描线、源极、漏极以及数据线,有效减弱了图像信号的延迟,提高显示质量;且采用金属氧化物半导体制成导电沟道,使其具有良好的透光性和柔性。
本发明还提供一种柔性阵列基板,该柔性阵列基板通过上述优选实施例中的柔性阵列基板的制作方法制成,具体可参照上述优选实施例中的柔性阵列基板的制作方法中制成的柔性阵列基板的相关描述,在此不做赘述。
本发明的柔性阵列基板的制作方法及柔性阵列基板,采用石墨烯材料制成栅极、扫描线、源极、漏极以及数据线,有效减弱了图像信号的延迟,提高显示质量;且采用金属氧化物半导体制成导电沟道,使其具有良好的透光性和柔性。
综上,虽然本发明已以优选实施例揭露如上,但上述优选实施例并非用以限制本发明,本领域的普通技术人员,在不脱离本发明的精神和范围内,均可作各种更动与润饰,因此本发明的保护范围以权利要求界定的范围为准。
Claims (9)
1.一种柔性阵列基板的制作方法,其特征在于,所述制备方法包括:
提供一基板;
在所述基板上沉积第一石墨烯层,对所述第一石墨烯层进行图案化处理,形成栅极、扫描线;
在所述基板、栅极、扫描线上形成第一绝缘层;
在所述第一绝缘层上沉积金属氧化物半导体层,对所述金属氧化物半导体层进行图案化处理,形成导电沟道;
在所述导电沟道、第一绝缘层上沉积第二石墨烯层,对所述第二石墨烯层进行图案化处理,形成源极、漏极、数据线,其中,所述导电沟道与所述源极、所述漏极相连接;
在所述基板、源极、漏极、数据线上形成第二绝缘层;以及
在所述第二绝缘层上沉积碳纳米管层,对所述碳纳米管层进行图案化处理,形成像素电极,所述像素电极通过通孔与所述漏极相连接。
2.根据权利要求1所述的柔性阵列基板的制作方法,其特征在于,所述基板为透明玻璃基板或塑料基板。
3.根据权利要求1或2所述的柔性阵列基板的制作方法,其特征在于,所述第一绝缘层包括第三绝缘层以及位于所述第三绝缘层上的第四绝缘层,其中,所述第三绝缘层采用的材料为有机树脂,所述第四绝缘层采用的材料为氧化物、氮化物或氮氧化合物。
4.根据权利要求3所述的柔性阵列基板的制作方法,其特征在于,所述金属氧化物半导体层的厚度介于50埃-2000埃之间。
5.根据权利要求1或2所述的柔性阵列基板的制作方法,其特征在于,所述第二绝缘层的材料为有机树脂。
6.根据权利要求5所述的柔性阵列基板的制作方法,其特征在于,所述第二绝缘层的厚度介于4000埃-30000埃之间。
7.根据权利要求1或2所述的柔性阵列基板的制作方法,其特征在于,所述金属氧化物半导体层为非晶铟镓锌氧化物。
8.根据权利要求1或2所述的柔性阵列基板的制作方法,其特征在于,可通过化学气相沉积法或旋涂法沉积所述第一石墨烯层和所述第二石墨烯层。
9.一种柔性阵列基板,其特征在于,包括:基板、设置在所述基板上的栅极和扫描线、设置在所述栅极和扫描线上的第一绝缘层、设置在所述第一绝缘层上的导电沟道、设置在所述导电沟道上的源极、漏极和数据线、设置在所述源极、漏极和数据线上的第二绝缘层、及设置在所述第二绝缘层上的像素电极,且所述导电沟道与所述源极、所述漏极连接,所述像素电极通过通孔与所述漏极相连接;其中,
所述栅极和扫描线经第一石墨烯层图案化处理后形成;所述导电沟道经金属氧化物半导体层图案化处理形成;所述源极、漏极和数据线经第二石墨烯层图案化处理形成;所述像素电极经碳纳米管层图案化处理形成。
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CN111477637A (zh) * | 2020-04-26 | 2020-07-31 | Tcl华星光电技术有限公司 | 显示面板及其制作方法 |
CN111834523A (zh) * | 2019-04-18 | 2020-10-27 | 南亚科技股份有限公司 | 存储器元件及其制造方法 |
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---|---|---|---|---|
CN102629579A (zh) * | 2011-09-29 | 2012-08-08 | 京东方科技集团股份有限公司 | 一种柔性tft阵列基板及其制造方法和显示装置 |
CN104347639A (zh) * | 2013-07-26 | 2015-02-11 | 业鑫科技顾问股份有限公司 | 薄膜晶体管基板及其制作方法 |
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CN104600083A (zh) * | 2015-01-29 | 2015-05-06 | 京东方科技集团股份有限公司 | 薄膜晶体管阵列基板及其制备方法、显示面板和显示装置 |
Cited By (2)
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CN111834523A (zh) * | 2019-04-18 | 2020-10-27 | 南亚科技股份有限公司 | 存储器元件及其制造方法 |
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