CN108007617A - Pressure resistance type flexible touch sensation sensor and its manufacture method with micro- frustum of a cone substrate - Google Patents

Pressure resistance type flexible touch sensation sensor and its manufacture method with micro- frustum of a cone substrate Download PDF

Info

Publication number
CN108007617A
CN108007617A CN201711268129.0A CN201711268129A CN108007617A CN 108007617 A CN108007617 A CN 108007617A CN 201711268129 A CN201711268129 A CN 201711268129A CN 108007617 A CN108007617 A CN 108007617A
Authority
CN
China
Prior art keywords
array
micro
frustum
graphene film
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201711268129.0A
Other languages
Chinese (zh)
Inventor
汪延成
朱凌锋
梅德庆
武欣
朱皖东
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zhejiang University ZJU
Original Assignee
Zhejiang University ZJU
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zhejiang University ZJU filed Critical Zhejiang University ZJU
Priority to CN201711268129.0A priority Critical patent/CN108007617A/en
Publication of CN108007617A publication Critical patent/CN108007617A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00Measuring force or stress, in general
    • G01L1/18Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material

Abstract

The invention discloses a kind of pressure resistance type flexible touch sensation sensor and its manufacture method with micro- frustum of a cone substrate.It is laminated by flexible film substrate from top to bottom successively, electrod-array, graphene film array, micro- frustum of a cone substrate, graphene film array is formed by the arrangement of graphene film chip arrays, and electrod-array is made of strip shaped electric poles;Electrod-array is fitted closely with graphene film array, and the both sides on each graphene film piece surface are disposed with strip shaped electric poles, and closed circuit is connected to form by two strip shaped electric poles;Manufacture method includes being bonded for flexible film substrate and the manufacture of electrod-array, the preparation of graphene film array and etching, the manufacture of silicon mould and micro- frustum of a cone substrate and flexible touch sensation sensor and assembles etc..The present invention is by the use of micro- frustum of a cone substrate as the support of graphene film, and the deformation of generation bigger and resistance variations, improve the sensitivity of sensor, solve the problems, such as the connection reliability between graphene film and electrode during stress.

Description

Pressure resistance type flexible touch sensation sensor and its manufacture method with micro- frustum of a cone substrate
Technical field
The present invention relates to flexible touch sensation sensor and its manufacture method, has micro- frustum of a cone substrate more particularly, to a kind of Pressure resistance type flexible touch sensation sensor and its manufacture method.
Technical background
With the continuous development of robot technology, the research of robot automtion is more and more important.Currently, intelligent robot One of developing goal of change is that the perception of robot and the two-way interactive ability of machine person to person, touch sensor are Realize the important channel of this target.Meanwhile touch sensor is as one of wearable electronic, in electronic skin, human body The many aspects such as sign detection, physical activity Data Collection have important application prospect.
Touch sensor can be divided into following several according to its sensor mechanism:Pressure resistance type, condenser type, piezoelectric type, optical profile type Deng, wherein, the advantages that piezoresistive tactile sensor is because of its high stability, wide dynamic range and it is wide concerned.Traditional pressure resistance type Sensor is based primarily upon metal strain meter and micro-nano silicon chip is made, and flexibility is poor, intensity is low, it is difficult to robot or human body surface It is bonded.And based on the piezoresistive transducer of organic soft material, there is fabulous flexibility and ductility, can be under multiple occasions Using, and impact failure of the outside stimulus to sensor can be reduced, thus it is more suitable for the demand of wearable electronic.
The main manufacturing processes of pressure resistance type flexible touch sensation sensor are prepared for the blending of conductive particle and organic soft material, pressure The shaping and pressure drag material and peripheral electrode for hindering material are bonded assembling.Wherein, pressure drag material leads to being bonded for peripheral electrode The colloid for having high conductivity, certain caking property usually through conductive silver glue etc. is realized.But the flexibility of currently used conductive rubber It is poor with ductility, therefore sensor prepared by this method is often when sensor occurs compared with large deformation because conductive rubber breaks Split or separate and destroy with pressure drag material.Therefore, pressure drag material and peripheral electrode pair are bonded using a kind of more stable method The stability of sensor is most important.
The content of the invention
In order to make up missing of the prior art, it is an object of the invention to provide a kind of pressure with micro- frustum of a cone substrate Resistive flexible touch sensation sensor and its manufacture method, can improve the flexibility of sensor, strengthen the connection of graphene film and electrode Intensity, lifts the stability of sensor.
The technical solution adopted by the present invention is:
First, a kind of pressure resistance type flexible touch sensation sensor with micro- frustum of a cone substrate:
The flexible touch sensation sensor is mainly by flexible film substrate, electrod-array, graphene film array and micro- circular cone Stylobate bottom stacks gradually from top to bottom to be formed, and flexible film substrate is supported as electrode supporting, micro- frustum of a cone substrate as bottom And for receiving external force stimulation.
The graphene film array is mainly formed by graphene film piece in same plane array arrangement, forms M rows The array structure of × N row, the electrod-array are mainly located at graphene film piece two by being arranged on graphene film array The strip shaped electric poles composition of side, all strip shaped electric poles are in same plane array arrangement.
The electrod-array is fitted closely with graphene film array, the both sides arrangement on each graphene film piece surface There are strip shaped electric poles, each graphene film piece is connected to form closed circuit, and graphene film battle array by two strip shaped electric poles A lateral electrode in row per a line is connected by peripheral circuit, and another lateral electrode of each row is connected by peripheral circuit.
Micro- frustum of a cone substrate is mainly by dimethyl silicone polymer (PDMS) film and the frustum of a cone of film surface Shape mesa array is formed, and for the fexible film with micro-meter scale frustum of a cone mesa array structure, single boss height is about 15 ~25 μm, 20~30 μm of boss bottom diameter, 50~60 ° of cone angle, whole substrate thickness is about 100~120 μm.
Micro- frustum of a cone substrate of the present invention can improve deformation degree of graphene film when by external force, and then improve stone The resistance variations of black alkene film, improve the sensitivity of sensor.
When sensor is subject to external force to act on, graphene film inner conductive rate when being acted on by external force changes Become, be resistance variations by graphene film sensing, and then change the size for obtaining institute's stress.
The flexible film substrate, graphene film array and micro- frustum of a cone substrate, which use, has good flexibility and extension The material of property.
2nd, a kind of manufacture method of the pressure resistance type flexible touch sensation sensor with micro- frustum of a cone substrate, comprises the following steps:
1) host agent of dimethyl silicone polymer (PDMS) is uniformly mixed with curing agent, on a glass substrate spin coating, heated Flexible film substrate is obtained after curing;
2) make with figuratum electrode mask plate, coat one layer of photoresist in advance on flexible film substrate surface, utilize The pattern of electrode mask plate is transferred on the photoresist on flexible film substrate surface by photolithography method, will using magnetically controlled sputter method Metal electrode is manufactured in flexible film substrate with the pattern of electrode mask plate, i.e., makes metal in the pierced pattern of photoresist Electrode, obtains electrod-array;
3) graphene nanometer sheet and dimethyl silicone polymer (PDMS) are uniformly mixed, with spin coating method in fexible film base Electrod-array surface on bottom prepares the graphene film of micron level, is heating and curing;
4) make with figuratum film mask plate, electrod-array surface one layer of the coating in advance in flexible film substrate The pattern of film mask plate, is transferred on the photoresist on graphene film surface by photoresist using photolithography method, using etc. from Daughter etching removes the graphene film beyond film reticle pattern, obtains graphene film array;
5) make with figuratum silicon mould mask plate, silicon chip surface coats one layer of photoresist in advance, utilizes photolithography method The pattern of silicon mould mask plate is transferred on the photoresist of silicon chip surface, is had and micro- frustum of a cone pair using wet etching manufacture Answer the silicon mould of groove structure;
6) processing is passivated to silicon mould with fluorine-based surface modifier, reduces silicon mould surface-active, make it easy to take off Mould.After carrying out demoulding processing to silicon mould, the host agent of dimethyl silicone polymer (PDMS) is uniformly mixed with curing agent, in silicon mould Have upper dimethyl silicone polymer (PDMS), be compacted, be heating and curing after from silicon mould peel off obtain micro- frustum of a cone substrate;
7) plasma activated processing is carried out to the connection surface between micro- frustum of a cone substrate and graphene film array, improved Interfacial energy, is then directed at fitting by micro- frustum of a cone substrate with graphene film array, heats and bonds after compacting, obtains flexibility Touch sensor.
In specific implementation the remaining photoresist of each layer of sensor is removed by being soaked inside acetone.
The flexible film substrate and micro- frustum of a cone base material are dimethyl silicone polymer (PDMS).Pass through ultrasound point Dissipate and graphene nanometer sheet and dimethyl silicone polymer are evenly dispersed in organic solvent, removed organic solvent by evaporating Go, the mixture of graphene and dimethyl silicone polymer is then prepared into the thickness film thick as a few micrometers using spin-coating method.
The mode that existing tradition prepares graphene film array is all to make graphene film on the glass substrate, after cutting Form graphene film piece, graphene film piece adheres to electrode surface with conducting resinl, due to conducting resinl adhesiving effect difference simultaneously And it is flexible poor, the bonding strength between electrode is reduced, reduces the stability of sensor, also reduces sensor at the same time It is flexible.
The present invention is adhered to, so as to strengthen by directly making graphene film on electrod-array surface without conducting resinl The bonding strength of graphene film and electrode, lifts the stability of sensor, improves the flexibility of sensor.
The invention has the advantages that:
(1) graphene film being prepared using graphene nanometer sheet and PDMS, film has good electric conductivity and piezoresistive, Excellent flexibility and ductility are provided simultaneously with, therefore is more suitable for the application demands such as electronic skin.
(2) using the boss micro structure array of micro- truncated cone shape, during to graphene film stress caused deformation into Row amplification, and then the resistance variations produced by stress are improved, improve the sensitivity of sensor.
(3) graphene film of micro-meter scale thickness is fabricated directly on electrode using spin-coating method, and utilizes plasma Body etching removes unnecessary film, makes possess higher bonding strength and reliability between graphene film and electrode.
Brief description of the drawings
Fig. 1 is that hierarchy of the present invention splits stereogram.
Fig. 2 is inventive sensor unit front view.
Fig. 3 is inventive sensor manufacturing process flow schematic diagram.
Fig. 4 is electrode mask plate schematic diagram of the present invention.
Fig. 5 is electrod-array schematic diagram of the present invention.
Fig. 6 is graphene film mask plate schematic diagram of the present invention.
Fig. 7 is graphene film array schematic diagram of the present invention.
Fig. 8 is silicon mould mask plate schematic diagram of the present invention.
Fig. 9 is the silicon mould schematic diagram that the present invention has micro- frustum of a cone groove.
Figure 10 is the micro- frustum of a cone substrate schematic diagram of the present invention.
Figure 11 is the finally formed flexible touch sensation sensor front view of the present invention.
In figure:1st, flexible film substrate, 2, electrod-array, 3, graphene film array, 4, micro- frustum of a cone substrate, 5, flexible Film, 6, strip shaped electric poles, 7, graphene film piece, 8, micro- frustum of a cone, 9, electrode mask plate, 10, graphene film mask plate, 11st, silicon mould mask plate, 12, have micro- frustum of a cone groove silicon mould.
Embodiment
The invention will be further described with reference to the accompanying drawings and examples.
As shown in Figure 1, Figure 2, shown in Figure 10, pressure resistance type flexible touch sensation sensor of the invention is mainly by flexible film substrate 1, electricity Pole array 2, graphene film array 3 and micro- frustum of a cone substrate 4 stack gradually form from top to bottom, 1 conduct of flexible film substrate Electrode supporting, micro- frustum of a cone substrate 4 support as bottom and for receiving external force stimulation.
As shown in Figure 1, Figure 2, Figure 5, graphene film array 3 is mainly by graphene film piece in same plane array arrangement Form, form the array structure of M rows × N row, the electrod-array 2 is mainly located at by being arranged on graphene film array 3 The strip shaped electric poles composition of graphene film piece both sides, all strip shaped electric poles are in same plane array arrangement.Electrod-array 2 and graphite Alkene membrane array 3 fits closely, and the both sides on each graphene film piece surface are disposed with strip shaped electric poles, each graphene is thin Diaphragm is connected to form closed circuit by two strip shaped electric poles, and the lateral electrode in graphene film array 3 per a line passes through Peripheral circuit is connected, and another lateral electrode of each row is connected by peripheral circuit.
As shown in Figure 1, Figure 2, shown in Fig. 9, micro- frustum of a cone substrate 4 is mainly by dimethyl silicone polymer (PDMS) film and film The conical mesa array on surface is formed, for the fexible film with micro-meter scale frustum of a cone mesa array structure, single boss Highly it is about 15~25 μm, 20~30 μm of boss bottom diameter, 50~60 ° of cone angle, whole substrate thickness is about 100~ 120μm.As shown in Fig. 2, by taking single sensor unit as an example, micro- frustum of a cone 8 can improve graphene film piece 7 when by external force Deformation degree, and then improve the resistance variations of graphene film 7, improve the sensitivity of sensor.
Manufacture method provided by the invention, specifically, the invention mainly comprises flexible film substrate and electrod-array Manufacture, the preparation of graphene film array and etching, manufacture and flexible touch sensation sensor of the silicon mould with micro- frustum of a cone substrate Fitting assemble several big steps.
As shown in figure 3, the embodiment of the present invention and its implementation process are as follows:
First, the manufacture of flexible film substrate and electrod-array:
1 material therefor of flexible film substrate is dimethyl silicone polymer (PDMS) in the present invention.First, by the host agent of PDMS With curing agent with 10:1 uniformly mixing, deaeration;Secondly, PDMS is dropped into glass substrate surface, thickness is prepared about using spin-coating method For 100 μm of film, be heating and curing in vacuum drying chamber at 80 DEG C 2 it is small when, obtain flexible film substrate 1.
As shown in figure 4, making with figuratum electrode mask plate 9, one layer of photoresist is coated in flexible film substrate 1, The pattern of electrode mask plate 9 is transferred on the photoresist on 1 surface of flexible film substrate using photoetching process, passes through magnetron sputtering point Not Fu Gai the chromium of 50nm and the copper of 200nm, then soak in acetone and remove photoresist, obtain the electrode with strip pattern Array 2, as shown in Figure 5.
2nd, the preparation of graphene film array and etching:
It is graphene nanometer sheet and dimethyl silicone polymer that 3 material therefor of graphene film array is prepared in the present invention (PDMS).First, graphene nanometer sheet is mixed with organic solvent, it is small that scattered 1 is carried out under 50W power by Ultrasonic Cell Disruptor When;Then, add PDMS, continue after mechanical agitation 30 minutes ultrasonic disperse 2 it is small when;Finally, by mixed solution in heating Stirring, removes organic solvent evaporation at 80 degrees Celsius.
Graphene PDMS mixtures are dropped on the electrod-array 2 of flexible film substrate 1, thickness is prepared about using spin-coating method For 1~2 μm of graphene film, move in vacuum drying chamber be heating and curing at 60 c 1 it is small when;Then, such as Fig. 6 institutes Show, manufacture with figuratum graphene film mask plate, one layer of photoresist is coated on graphene film, using photoetching process by stone The pattern of black alkene film mask plate 10 is transferred on the photoresist on graphene film surface, will be unnecessary using plasma etching method Graphene film removes, and obtains having figuratum graphene film array 3 as shown in Figure 7.
The graphene film prepared by spin-coating method, the coating processes common compared to knife coating etc., have the thickness of smaller The flatness of degree and higher, is conducive to the smaller and flexible lifting of sensor integral thickness.Carved using photoetching process and plasma Erosion legal system makes graphene film array 3, compared with cutting technique after traditional curing of coating, has the accuracy of manufacture of higher, and And eliminate and graphene film and the conducting resinl needed for electrode are bonded in traditional handicraft.Although currently used conducting resinl have compared with Good adhesion, but it is flexible very poor, therefore the sensor manufactured with conducting resinl would generally cause stone because of sensor deformation is excessive Black alkene film is broken with electrode separation or conducting resinl.The graphene film array 3 manufactured using manufacture method in the present invention, due to Directly in 2 surface cure of electrod-array, higher adhesion strength is formd using viscosity and 2 surface of electrod-array of PDMS, together When ensure that graphene film array 3 and the reliable electric of electrod-array 2 are connected, improve the flexibility and stability of sensor.
3rd, silicon mould and the manufacture of micro- frustum of a cone substrate:
Micro- 4 material therefor of frustum of a cone substrate is dimethyl silicone polymer (PDMS) in the present invention.As shown in figure 8, make band Figuratum silicon mould mask plate, coats one layer of photoresist on silicon chip, using photoetching process by the pattern of silicon mould mask plate 11 It is transferred on the photoresist of silicon chip surface, carrying out wet etching manufacture using potassium hydroxide (KOH) has micro- frustum of a cone groove Silicon mould 12, as shown in Figure 9;Silicon mould 12 with micro- frustum of a cone groove is placed in vacuum drying chamber, is instilled a small amount of fluorine-based Surface modifier, vacuum standing 12 are passivated silicon mould processing when small, reduce silicon mould surface-active, make it easy to take off Mould.
As shown in Figure 10, by the host agent of PDMS and curing agent with 10:1 uniformly mixing, deaeration;PDMS is dropped to micro- circle 12 surface of silicon mould of frustum groove, is put into standing and defoaming in vacuum drying chamber after whole mould is filled up;PDMS is taken the photograph 80 Be heating and curing under family name's degree 2 it is small when after peel off, obtain micro- frustum of a cone substrate 4.Micro- frustum of a cone substrate integral thickness of manufacture is about 100 μm, the height of single micro- frustum of a cone is about 20 μm, and micro- frustum of a cone base diameter is about 25 μm, and cone angle is 54.7 °.
4th, the fitting assembling of flexible touch sensation sensor:
As shown in figure 11, plasma work is carried out to the connection surface between micro- frustum of a cone substrate 4 and graphene film array 3 Property processing, processing time 5s, improve interfacial energy;Then micro- frustum of a cone substrate 4 is directed at patch with graphene film array 3 Close, heat and bond after compacting, obtain flexible touch sensation sensor.
In specific implementation, dimethyl silicone polymer (PDMS) uses 184 silicon rubber of SYLGARD of Dow Corning Corporation;Graphite Alkene nanometer sheet uses few layer graphene of Suzhou Tan Feng graphenes Science and Technology Ltd.;Photoresist is had using Beijing remittance moral letter science and technology The positive photoresists of AR-P 5350 of limit company.
Pressure resistance type flexible touch sensation sensor of the present invention and its manufacture method, make sensor have preferable flexible and stablize Property;The deformation produced using the raised micro-structure of micro- truncated cone shape to graphene film stress is amplified, and then is improved The sensitivity of sensor;The graphene film array of micron order thickness is fabricated directly in using spin-coating method and plasma etching On electrode, make possess higher bonding strength and reliability between graphene film and electrode, improve the stability of sensor, It is more suitable for the application demands such as electronic skin.

Claims (8)

  1. A kind of 1. pressure resistance type flexible touch sensation sensor with micro- frustum of a cone substrate, it is characterised in that:The softness haptic perception sensing Device mainly by flexible film substrate (1), electrod-array (2), graphene film array (3) and micro- frustum of a cone substrate (4) from up to Under stack gradually and form, flexible film substrate (1) is used as electrode supporting, and micro- frustum of a cone substrate (4) supports and uses as bottom Stimulated in receiving external force.
  2. 2. a kind of pressure resistance type flexible touch sensation sensor with micro- frustum of a cone substrate according to claim 1, its feature exist In:The graphene film array (3) is mainly formed by graphene film piece in same plane array arrangement, forms M rows × N The array structure of row, the electrod-array (2) are mainly located at graphene film piece by being arranged on graphene film array (3) The strip shaped electric poles composition of both sides.
  3. 3. a kind of pressure resistance type flexible touch sensation sensor with micro- frustum of a cone substrate according to claim 2, its feature exist In:The electrod-array (2) fits closely with graphene film array (3), the both sides cloth on each graphene film piece surface Strip shaped electric poles are equipped with, each graphene film piece is connected to form closed circuit, and graphene film by two strip shaped electric poles A lateral electrode in array (3) per a line is connected by peripheral circuit, and another lateral electrode of each row is connected by peripheral circuit.
  4. 4. a kind of pressure resistance type flexible touch sensation sensor with micro- frustum of a cone substrate according to claim 1, its feature exist In:Micro- frustum of a cone substrate (4) is mainly by PDMS membrane and the truncated cone mesa array structure of film surface Into single boss height is about 15~25 μm, 20~30 μm of boss bottom diameter, 50~60 ° of cone angle, whole substrate thickness About 100~120 μm.
  5. 5. a kind of pressure resistance type flexible touch sensation sensor with micro- frustum of a cone substrate according to claim 1, its feature exist In:Graphene film inner conductive rate when being acted on by external force changes, and is resistance by graphene film sensing Change, and then change the size for obtaining institute's stress.
  6. 6. the manufacturer for any pressure resistance type flexible touch sensation sensors with micro- frustum of a cone substrate of claim 1-5 Method, comprises the following steps:
    1) host agent of dimethyl silicone polymer is uniformly mixed with curing agent, on a glass substrate spin coating, is obtained after being heating and curing Flexible film substrate (1);
    2) make with figuratum electrode mask plate, the pattern of electrode mask plate is transferred to fexible film base using photolithography method On the photoresist on bottom (1) surface, metal electrode is manufactured in flexible film substrate (1) using magnetically controlled sputter method, obtains electricity Pole array (2);
    3) graphene and dimethyl silicone polymer are uniformly mixed, with electrode array of the spin coating method in flexible film substrate (1) The graphene film that (2) surface prepares micron level is arranged, is heating and curing;
    4) make with figuratum film mask plate, the pattern of film mask plate is transferred to graphene film using photolithography method On the photoresist on surface, using plasma etching removes the graphene film beyond film reticle pattern, obtains graphite Alkene membrane array (3);
    5) make with figuratum silicon mould mask plate, the pattern of silicon mould mask plate is transferred to silicon chip table using photolithography method On the photoresist in face, using wet etching manufacture with the silicon mould with micro- frustum of a cone respective slot structure;
    6) after carrying out demoulding processing to silicon mould, the host agent of dimethyl silicone polymer (PDMS) is uniformly mixed with curing agent, Silicon mould upper dimethyl silicone polymer (PDMS), peels off from silicon mould after being heating and curing after compacting and obtains micro- circular cone stylobate Bottom (4);
    7) plasma activated processing is carried out to the connection surface between micro- frustum of a cone substrate (4) and graphene film array (3), so Micro- frustum of a cone substrate (4) is directed at fitting with graphene film array (3) afterwards, heats and bonds after compacting, obtains softness haptic perception biography Sensor.
  7. A kind of 7. manufacturer of pressure resistance type flexible touch sensation sensor with micro- frustum of a cone substrate according to claim 6 Method, it is characterised in that:The flexible film substrate (1) and micro- frustum of a cone substrate (4) material is dimethyl silicone polymer (PDMS)。
  8. A kind of 8. manufacturer of pressure resistance type flexible touch sensation sensor with micro- frustum of a cone substrate according to claim 6 Method, it is characterised in that:The graphene film material therefor is graphene nanometer sheet and dimethyl silicone polymer, passes through ultrasound point Dissipate and graphene nanometer sheet and dimethyl silicone polymer are evenly dispersed in organic solvent, removed organic solvent by evaporating Go, the mixture of graphene and dimethyl silicone polymer is then prepared into the thickness film thick as a few micrometers using spin-coating method.
CN201711268129.0A 2017-12-05 2017-12-05 Pressure resistance type flexible touch sensation sensor and its manufacture method with micro- frustum of a cone substrate Pending CN108007617A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201711268129.0A CN108007617A (en) 2017-12-05 2017-12-05 Pressure resistance type flexible touch sensation sensor and its manufacture method with micro- frustum of a cone substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201711268129.0A CN108007617A (en) 2017-12-05 2017-12-05 Pressure resistance type flexible touch sensation sensor and its manufacture method with micro- frustum of a cone substrate

Publications (1)

Publication Number Publication Date
CN108007617A true CN108007617A (en) 2018-05-08

Family

ID=62056523

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201711268129.0A Pending CN108007617A (en) 2017-12-05 2017-12-05 Pressure resistance type flexible touch sensation sensor and its manufacture method with micro- frustum of a cone substrate

Country Status (1)

Country Link
CN (1) CN108007617A (en)

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109323784A (en) * 2018-09-21 2019-02-12 浙江大学 A kind of pressure resistance type flexible touch sensation sensor with the double-deck snap-type micro-boss
CN109827700A (en) * 2019-03-04 2019-05-31 温州大学 A kind of double-disk graphite-based pressure resistance type pliable pressure sensor and its manufacture craft
CN109855776A (en) * 2019-01-31 2019-06-07 京东方科技集团股份有限公司 Pressure sensor, pressure detecting system and wearable device
CN110108395A (en) * 2019-06-14 2019-08-09 清华大学深圳研究生院 A kind of tactile and slip sensor and preparation method thereof
CN110589754A (en) * 2019-09-12 2019-12-20 复旦大学 Flexible underwater pressure sensor and preparation method thereof
CN110608825A (en) * 2019-09-12 2019-12-24 复旦大学 Flexible pressure sensor based on polyimide substrate microstructure and preparation method thereof
CN111024279A (en) * 2019-12-30 2020-04-17 浙江清华柔性电子技术研究院 Pressure sensor unit and pressure sensor
CN111347461A (en) * 2018-12-20 2020-06-30 湖南早晨纳米机器人有限公司 Nano robot manufacturing process
CN111533081A (en) * 2020-05-18 2020-08-14 吉林大学 Composite flexible pressure sensor based on bionic microstructure and preparation method thereof
CN111551294A (en) * 2020-05-21 2020-08-18 浙江大学 Flexible pressure sensor based on liquid metal photocuring printing technology
CN112179262A (en) * 2019-07-05 2021-01-05 中国科学院理化技术研究所 Functional graphene-based flexible strain sensor and preparation method and application thereof
CN112857630A (en) * 2021-01-15 2021-05-28 之江实验室 Three-dimensional convex flexible touch sensor of soft robot hand and manufacturing method
CN112985661A (en) * 2019-12-13 2021-06-18 天津大学 Electronic skin based on human epidermis structure and preparation method and application thereof
CN113217313A (en) * 2021-04-22 2021-08-06 北京航空航天大学杭州创新研究院 Response actuating device, preparation method and application
CN113588795A (en) * 2021-06-24 2021-11-02 清华大学 Flexible ultrasonic area array manufacturing method, flexible ultrasonic area array and ultrasonic imaging method
CN114001845A (en) * 2021-10-22 2022-02-01 北京航空航天大学杭州创新研究院 Preparation method of force-sensitive sensor based on high-density microstructure array electrode
CN114046913A (en) * 2021-11-17 2022-02-15 燕山大学 Flexible graphene pressure sensor and preparation method thereof
CN114608729A (en) * 2022-03-07 2022-06-10 杭州电子科技大学 Array type piezoresistive sensor flexible integrated electronic system and preparation method thereof
CN114674483A (en) * 2022-04-08 2022-06-28 浙江大学 Three-dimensional force flexible touch sensor with high tangential angle resolution
US20220299385A1 (en) * 2019-06-10 2022-09-22 National University Of Singapore Composite structure for a pressure sensor and pressure sensor

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1966394A (en) * 2006-11-23 2007-05-23 西北工业大学 Touch sensor and its manufacture method
US20110226069A1 (en) * 2010-03-18 2011-09-22 Korea Research Institute Of Standards And Science Flexible force or pressure sensor array using semiconductor strain gauge, fabrication method thereof and measurement method thereof
US20110241860A1 (en) * 2010-03-31 2011-10-06 Tk Holdings Inc. Occupant sensing system
CN102564657A (en) * 2012-01-16 2012-07-11 江苏物联网研究发展中心 Graphene-based array type flexible pressure distribution sensor and preparation method thereof
CN202442824U (en) * 2012-02-20 2012-09-19 浙江大学 Bionic flexible tactile sensor array based on combination of piezoresistive type and capacitive type
CN104803339A (en) * 2015-04-21 2015-07-29 电子科技大学 Flexible micro pressure sensor and preparation method thereof
CN105092118A (en) * 2015-09-25 2015-11-25 东南大学 Flexible piezoresistive pressure sensor with high sensitivity, and preparing method thereof
CN205157086U (en) * 2015-11-20 2016-04-13 浙江大学 Flexible three -dimensional touch sensing array of piezoelectric type
CN106441645A (en) * 2016-09-29 2017-02-22 中国科学院重庆绿色智能技术研究院 Graphene pressure sensor array system and preparation method thereof
CN207515931U (en) * 2017-12-05 2018-06-19 浙江大学 A kind of pressure resistance type flexible touch sensation sensor with micro- frustum of a cone substrate

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1966394A (en) * 2006-11-23 2007-05-23 西北工业大学 Touch sensor and its manufacture method
US20110226069A1 (en) * 2010-03-18 2011-09-22 Korea Research Institute Of Standards And Science Flexible force or pressure sensor array using semiconductor strain gauge, fabrication method thereof and measurement method thereof
US20110241860A1 (en) * 2010-03-31 2011-10-06 Tk Holdings Inc. Occupant sensing system
CN102564657A (en) * 2012-01-16 2012-07-11 江苏物联网研究发展中心 Graphene-based array type flexible pressure distribution sensor and preparation method thereof
CN202442824U (en) * 2012-02-20 2012-09-19 浙江大学 Bionic flexible tactile sensor array based on combination of piezoresistive type and capacitive type
CN104803339A (en) * 2015-04-21 2015-07-29 电子科技大学 Flexible micro pressure sensor and preparation method thereof
CN105092118A (en) * 2015-09-25 2015-11-25 东南大学 Flexible piezoresistive pressure sensor with high sensitivity, and preparing method thereof
CN205157086U (en) * 2015-11-20 2016-04-13 浙江大学 Flexible three -dimensional touch sensing array of piezoelectric type
CN106441645A (en) * 2016-09-29 2017-02-22 中国科学院重庆绿色智能技术研究院 Graphene pressure sensor array system and preparation method thereof
CN207515931U (en) * 2017-12-05 2018-06-19 浙江大学 A kind of pressure resistance type flexible touch sensation sensor with micro- frustum of a cone substrate

Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109323784A (en) * 2018-09-21 2019-02-12 浙江大学 A kind of pressure resistance type flexible touch sensation sensor with the double-deck snap-type micro-boss
CN109323784B (en) * 2018-09-21 2020-07-10 浙江大学 Piezoresistive flexible touch sensor with double-layer buckle type micro-boss
CN111347461A (en) * 2018-12-20 2020-06-30 湖南早晨纳米机器人有限公司 Nano robot manufacturing process
CN111347461B (en) * 2018-12-20 2022-03-25 湖南早晨纳米机器人有限公司 Nano robot manufacturing process
CN109855776A (en) * 2019-01-31 2019-06-07 京东方科技集团股份有限公司 Pressure sensor, pressure detecting system and wearable device
CN109827700A (en) * 2019-03-04 2019-05-31 温州大学 A kind of double-disk graphite-based pressure resistance type pliable pressure sensor and its manufacture craft
US20220299385A1 (en) * 2019-06-10 2022-09-22 National University Of Singapore Composite structure for a pressure sensor and pressure sensor
CN110108395A (en) * 2019-06-14 2019-08-09 清华大学深圳研究生院 A kind of tactile and slip sensor and preparation method thereof
CN110108395B (en) * 2019-06-14 2024-01-16 清华大学深圳研究生院 Touch and slide sensor and preparation method thereof
CN112179262A (en) * 2019-07-05 2021-01-05 中国科学院理化技术研究所 Functional graphene-based flexible strain sensor and preparation method and application thereof
CN110608825A (en) * 2019-09-12 2019-12-24 复旦大学 Flexible pressure sensor based on polyimide substrate microstructure and preparation method thereof
CN110589754A (en) * 2019-09-12 2019-12-20 复旦大学 Flexible underwater pressure sensor and preparation method thereof
CN110608825B (en) * 2019-09-12 2021-08-20 复旦大学 Flexible pressure sensor based on polyimide substrate microstructure and preparation method thereof
CN112985661A (en) * 2019-12-13 2021-06-18 天津大学 Electronic skin based on human epidermis structure and preparation method and application thereof
CN111024279A (en) * 2019-12-30 2020-04-17 浙江清华柔性电子技术研究院 Pressure sensor unit and pressure sensor
CN111533081A (en) * 2020-05-18 2020-08-14 吉林大学 Composite flexible pressure sensor based on bionic microstructure and preparation method thereof
CN111533081B (en) * 2020-05-18 2022-07-05 吉林大学 Composite flexible pressure sensor based on bionic microstructure and preparation method thereof
CN111551294B (en) * 2020-05-21 2021-03-30 浙江大学 Flexible pressure sensor based on liquid metal photocuring printing technology
CN111551294A (en) * 2020-05-21 2020-08-18 浙江大学 Flexible pressure sensor based on liquid metal photocuring printing technology
CN112857630A (en) * 2021-01-15 2021-05-28 之江实验室 Three-dimensional convex flexible touch sensor of soft robot hand and manufacturing method
CN113217313B (en) * 2021-04-22 2022-05-17 北京航空航天大学杭州创新研究院 Response actuating device, preparation method and application
CN113217313A (en) * 2021-04-22 2021-08-06 北京航空航天大学杭州创新研究院 Response actuating device, preparation method and application
CN113588795A (en) * 2021-06-24 2021-11-02 清华大学 Flexible ultrasonic area array manufacturing method, flexible ultrasonic area array and ultrasonic imaging method
CN114001845A (en) * 2021-10-22 2022-02-01 北京航空航天大学杭州创新研究院 Preparation method of force-sensitive sensor based on high-density microstructure array electrode
CN114046913A (en) * 2021-11-17 2022-02-15 燕山大学 Flexible graphene pressure sensor and preparation method thereof
CN114608729A (en) * 2022-03-07 2022-06-10 杭州电子科技大学 Array type piezoresistive sensor flexible integrated electronic system and preparation method thereof
CN114674483A (en) * 2022-04-08 2022-06-28 浙江大学 Three-dimensional force flexible touch sensor with high tangential angle resolution

Similar Documents

Publication Publication Date Title
CN108007617A (en) Pressure resistance type flexible touch sensation sensor and its manufacture method with micro- frustum of a cone substrate
CN106197774B (en) Flexible piezoresistive tactile sensor array and preparation method thereof
CN110608825B (en) Flexible pressure sensor based on polyimide substrate microstructure and preparation method thereof
CN109323784A (en) A kind of pressure resistance type flexible touch sensation sensor with the double-deck snap-type micro-boss
CN108775979A (en) A kind of high sensitivity pliable pressure sensor and preparation method thereof
CN109115376A (en) A kind of condenser type pliable pressure sensor and preparation method thereof
CN110082010A (en) Flexible touch sensation sensor array and array scanning system applied to it
CN208350249U (en) A kind of high sensitivity pliable pressure sensor
CN110579297A (en) High-sensitivity flexible piezoresistive sensor based on MXene bionic skin structure
CN208765878U (en) A kind of condenser type pliable pressure sensor
CN207515931U (en) A kind of pressure resistance type flexible touch sensation sensor with micro- frustum of a cone substrate
WO2018120384A1 (en) Pressure sensor and preparation method therefor
CN109406012A (en) A kind of threedimensional haptic sensor array of flexible piezoelectric formula and preparation method thereof
CN105758562A (en) Flexible pressure sensor and preparation method thereof
CN108955994A (en) Touch sensor and preparation method thereof
CN202442824U (en) Bionic flexible tactile sensor array based on combination of piezoresistive type and capacitive type
CN108225625A (en) Pliable pressure sensor and preparation method thereof
CN109855526A (en) A kind of resistance-type flexibility strain transducer and preparation method thereof based on dry mediation self assembly
CN108318161A (en) Wearable pressure sensor and its manufacturing method
CN108917995A (en) A kind of flexibility piezoresistance sensor
WO2019222969A1 (en) Flexible pressure sensor based on hemispheric microstructure and fabrication method therefor
CN103759809B (en) A kind of three-dimensional piezoelectric vector hydrophone microstructure
CN114705334B (en) Linear piezoresistive touch sensor and preparation method thereof
CN107748024A (en) A kind of flexible touch sensation sensor of micro-patterning and preparation method thereof
CN208872241U (en) A kind of flexibility strain transducer

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination