CN109406012A - A kind of threedimensional haptic sensor array of flexible piezoelectric formula and preparation method thereof - Google Patents
A kind of threedimensional haptic sensor array of flexible piezoelectric formula and preparation method thereof Download PDFInfo
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- CN109406012A CN109406012A CN201811331536.6A CN201811331536A CN109406012A CN 109406012 A CN109406012 A CN 109406012A CN 201811331536 A CN201811331536 A CN 201811331536A CN 109406012 A CN109406012 A CN 109406012A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 238000009472 formulation Methods 0.000 title description 2
- 230000035945 sensitivity Effects 0.000 claims abstract description 53
- 239000003990 capacitor Substances 0.000 claims abstract description 28
- 239000002086 nanomaterial Substances 0.000 claims abstract description 11
- 239000004205 dimethyl polysiloxane Substances 0.000 claims abstract description 8
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- 239000012528 membrane Substances 0.000 claims abstract description 8
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims abstract description 8
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- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 claims abstract 7
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/16—Measuring force or stress, in general using properties of piezoelectric devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
Abstract
The invention discloses a kind of threedimensional haptic sensor array of flexible piezoelectric formula, structure includes sequentially connected PDMS hemispherical projections layer, upper electrode layer, nanostructure piezoelectric thin film layer, lower electrode layer, printed circuit board flexible base layer from top to bottom；The nanostructure piezoelectric thin film layer is Nano ZnO piezoelectric membrane, and is located between the upper/lower electrode layer in array patterning distribution, and multiple piezoelectric sensitivity units are formed；The threedimensional haptic sensor array is made of M × N number of sensor unit being separated from each other, each sensor unit contains a PDMS hemispherical projections and three piezoelectric sensitivity capacitors, three-dimensional contact force is transferred to three piezoelectric sensitivity capacitors by PDMS hemispherical projections, generates the size of charge by three piezoelectric sensitivity capacitors to measure extraneous three-dimensional contact force.The invention also discloses the preparation methods of the threedimensional haptic sensor of the flexible piezoelectric formula.The present invention has the advantages that three-dimensional contact force measurement, high sensitivity, high-flexibility, dynamic response are good.
Description
Technical field
The invention belongs to tactile sensor technology fields, and in particular to a kind of threedimensional haptic sensor array of flexible piezoelectric formula
Column and preparation method thereof.
Background technique
Tactile is a kind of important consciousness form for being only second to vision that robot obtains environmental information, and the tactile of broad sense includes
Contacting feeling, pressure sensation, power feel, sliding feel, temperature sense etc., the force feeling of narrow sense said it is on manipulator and object contact face.Now,
Since touch sensor can detect or perceive robot and a series of physical characteristic quantity when object, environmental interaction
Minor variations, the not only distribution function of the hand of available robot and the contact position of object and contact force, but also can be with
The object information that vision can not obtain, such as vibrant characteristic, heat transfer characteristic, mechanical property are obtained, touch sensor is artificial
Artificial limb, machine skin, touch screen, wearable electronic device etc. show huge application prospect.It has concurrently flexible and three-dimensional
The flexible touch sensation sensor of power detection function has a wide range of applications in the research fields such as sports, medical treatment and biomethanics
Prospect.
In in the past few decades, people use various novel sensitive materials, new sensitive mechanism, new device architecture
Deng imitation tactile, its sensitivity characteristic is effectively promoted, its application field is extended, and the research of touch sensing technology is pushed to achieve length
The progress of foot.Touch sensor is broadly divided into five seed types, including condenser type, pressure resistance type, piezoelectric type, light by working mechanism difference
And friction electric-type touch sensor.Piezoelectric type touch sensor utilizes the piezoelectric effect of sensitive material, when external force is in quick
When feeling material, recurring structure deformation causes occur positive and negative bound charge on its surface, to perceive external pressure information.With pressure
Resistive, capacitance type touch sensor are compared, the sensitivity with higher of piezoelectric type touch sensor, dynamic response, low energy consumption and
The advantages such as self energizing, and its performance is unrelated with contact object, in the flexible touching for developing fast dynamic response, low energy consumption, self energizing
There is important value in terms of feeling sensor, can be widely applied to the fields such as human-computer interaction, robot, biomedical articles.
Currently, threedimensional haptic sensor is mainly based on based on pressure resistance type and condenser type.Silicon piezoresistance type threedimensional haptic sensing
Device has that performance is stable, interface is simple, the advantages such as easy of integration, but its fragility is allowed to and flexible wearable application mismatches.It leads
Though electric rubber-type pressure resistance type threedimensional haptic sensor and flexible capacitance type threedimensional haptic sensor have the characteristics that flexible,
But its dynamic property is bad, can not dock and touch Slip Signal realization quick response.To solve these problems, it is necessary to study one
Kind of the flexible 3 D tactile sensing array based on piezoelectric type the characteristics of by its quick response, realizes contact and slip state
Quickly judgement.However, existing flexible piezoelectric formula touch sensor mostly uses Kynoar (PVDF) or Kynoar
Copolymer (PVDF-TrFE) serves as piezoelectric sensitivity material.However, compared with inorganic piezoelectric material, based on organic piezoelectric materials
Though touch sensor flexibility is good, its low piezoelectric modulus leads to muting sensitivity.Therefore, flexible piezoelectric formula tactile how is solved
Contradiction between sensor high-flexibility and high sensitivity, exploitation have both high-flexibility, high sensitivity, easy large-area manufacturing, it is low at
The hot spot that educational circles and industrial circle are paid close attention to always such as this processing.
Summary of the invention
It is an object of the invention to overcome shortcoming and deficiency in the prior art, a kind of three-dimensional touching of flexible piezoelectric formula is provided
Feel sensor array and preparation method thereof, serves as piezoelectric sensitivity layer by using inorganic nano piezoelectric material, it is existing soft to solve
Property touch sensor cannot and high-flexibility and the problem of high sensitivity；Pass through hemispherical projections and three piezoelectric sensing element groups
At a sensor array element, and simple preparation process is used, to realize that one kind has both highly sensitive and high flexibility three
Tie up tactile sensor array.
In order to achieve the above object, the present invention adopts the following technical scheme that:
A kind of threedimensional haptic sensor array of flexible piezoelectric formula, structure include: sequentially connected hemisphere from top to bottom
Shape convexity layer 1, upper electrode layer 2, nanostructure piezoelectric thin film layer 3, lower electrode layer 5 and flexible printed circuit board basal layer 6；
The threedimensional haptic sensor array is made of M × N number of threedimensional haptic sensor unit being separated from each other；
The hemispherical projections layer 1 is the hemispheric patterned film that surface has M × N arrangement, and is covered in M × N
On the top electrode figure of arrangement；The lower electrode layer 5 is the array node of M × N arrangement, and each array node is each top electrode
Electrode under three circles of underface, i.e. the corresponding three lower electrodes of a top electrode, and meanwhile it is thin with sandwich nanostructure piezoelectricity
Three piezoelectric sensitivity capacitors are collectively formed in film, and a hemispherical projections are just being pressed on three piezoelectric sensitivity capacitors, composition one
A threedimensional haptic sensor unit；
Each threedimensional haptic sensor unit is convex containing a hemispherical projections and three piezoelectric sensitivity capacitors, the hemispherical
Rise and three-dimensional contact force be transferred to three piezoelectric sensitivity capacitors, by three piezoelectric sensitivity capacitor both ends generate the size of charge with
Measure the size and Orientation of extraneous contact force.
As a preferred technical solution, between each piezoelectric sensitivity capacitor using polyimide flex film 4 as insulation every
From film, and between upper electrode layer and flexible printed circuit board basal layer, make three in the threedimensional haptic sensor unit
A piezoelectric sensitivity capacitor has electric isolution between each other, and is dielectrically separated from the threedimensional haptic sensor unit of surrounding.
As a preferred technical solution, in the threedimensional haptic sensor unit, three piezoelectric sensitivity capacitors are distributed in half
The underface of hemisphere jut, and three lower electrodes are inscribed in the projection disc of hemispherical projections.
The nanostructure piezoelectric thin film layer is ZnO nano-wire piezoelectric sensitivity film as a preferred technical solution, is grown on
On lower electrode layer in array patterning distribution, and between upper/lower electrode layer, the piezoelectric sensitivity unit of M × N arrangement is formed.
The upper electrode layer is the nano particle Ag film layer of 100~200nm thickness as a preferred technical solution,；It is described
Lower electrode is the Zn film with a thickness of 1~2 μm.
As a preferred technical solution, the polyimide flex film with a thickness of 2~3 μm.
The hemispherical projections layer is flexible dimethyl silicone polymer (PDMS) material as a preferred technical solution,.
The preparation method of the threedimensional haptic sensor array of the flexible piezoelectric formula, including the following steps:
(1) one layer of Zn film is deposited in flexible printed circuit board substrate using vacuum evaporation, and etches and forms M × N arrangement
Each array node, each array node has electrode and lead-out wire under three circles；
(2) the spin-on polyimide film in the flexible substrates for being covered with Zn film, and etch in removal circle Zn film surface
Kapton makes the Zn film exposure of circular portion；
(3) the growing ZnO nano-wire piezoelectric sensitivity film layer in round Zn film surface；
(4) nano particle Ag ink is utilized, is formed on ZnO nano-wire and Kapton using screen printing technique
Nanometer Ag film, heat treatment form the top electrode of sensor unit；
(5) PDMS prepolymer mixed with curing agent, stir evenly, vacuumize bubble removing, be injected into hemispherical dimples
Curing process in the aluminum alloy mould of array produces PDMS hemispherical projections layer；
(6) the top electrode adhesive layer of the sensor unit of the lower surface to PDMS hemispherical projections layer and step (4) preparation
Upper surface carries out oxygen plasma activation, and the two surfaces are aligned and are bonded, and prepares the threedimensional haptic sensor array.
As a preferred technical solution, in step (3), the ZnO nano-wire piezoelectric sensitivity film layer is using hydro-thermal steam
Method forms ZnO nano terminal and serves as piezoelectric sensitivity film in Zn film surface growing ZnO nano-wire, and is made by controlling process conditions
The height of ZnO nano-wire is equal to or slightly lower than the thickness of surrounding polyimide flex film, and guarantees circle Zn film not all
It is converted into ZnO nano-wire.
The present invention has the following advantages compared with the existing technology and effect:
1, the threedimensional haptic sensor array of flexible piezoelectric formula of the present invention, using ZnO nano material as piezoelectric sensitivity layer,
It can solve the problems, such as existing flexible touch sensation sensor muting sensitivity and low resolution；
2, the threedimensional haptic sensor array of flexible piezoelectric formula of the present invention passes through PDMS hemispherical projections and three uniformly distributed pressures
The combination of capacitor can measure the size and Orientation of three-dimensional contact force, have the advantages that structure is simple and convenient to operate；
3, flexible piezoelectric formula threedimensional haptic sensor array of the present invention, basal layer are dielectrically separated from film, Nano ZnO pressure
Electric sensitive layer, surface hemispherical projections layer are flexible material preparation, are loaded convenient for curved surface, and existing rigid tactile sensing can be solved
Device array is difficult to the problem of loading in curved surface, effectively increases the applicability of sensor；
4, the threedimensional haptic sensor array of flexible piezoelectric formula of the present invention, compared with existing flexible touch sensation sensor, more preferably
Ground solves the contradiction between high sensitivity and high-flexibility, effectively increases gain, signal-to-noise ratio and the anti-interference energy of sensor
Power is more convenient for being applied to various wearable smart electronics systems, robot tracking control, biomedical articles.
Detailed description of the invention
Fig. 1 is the stereo-resolution schematic diagram of the threedimensional haptic sensor array of flexible piezoelectric formula of the present invention；
Fig. 2 is the schematic diagram of PDMS hemispherical projections layer of the present invention；
Fig. 3 is the plan view of upper electrode layer of the present invention；
Fig. 4 is the plan view of lower electrode layer of the present invention；
Fig. 5 is the sensor unit structure schematic diagram after the lower electrode preparation of the present invention；
Fig. 6 is that the present invention is dielectrically separated from the sensor unit structure schematic diagram after being formed；
Fig. 7 is the sensor unit structure schematic diagram after ZnO nano-wire piezoelectric membrane of the present invention growth；
Fig. 8 is the post-depositional sensor unit structure schematic diagram of top electrode of the present invention；
Fig. 9 is the threedimensional haptic sensor unit structure schematic diagram after PDMS hemispherical projections layer of the present invention preparation.
Specific embodiment
In order to which the purpose of the present invention, technical solution and advantage is more clearly understood, with reference to the accompanying drawings and embodiments,
The present invention is further described in detail.It should be appreciated that described herein, the specific embodiments are only for explaining the present invention,
It is not limited to the present invention.
Embodiment
As shown in Figure 1, a kind of threedimensional haptic sensor array of flexible piezoelectric formula, structure includes: from top to bottom successively
PDMS hemispherical projections layer 1, upper electrode layer 2, nanostructure piezoelectric thin film layer 3, lower electrode layer 5 and the flexible printing of connection
Circuit board substrate layer 6；The threedimensional haptic sensor array is made of M × N number of threedimensional haptic sensor unit being separated from each other,
Each threedimensional haptic sensor unit further includes one for being dielectrically separated from the polyimide flex film of piezoelectric sensitivity capacitor
4, as shown in Figure 6；
The present embodiment preferred M=3, N=4, i.e., 3 × 4 totally 12 sensor units；The PDMS hemispherical projections layer 1 is
Surface has the hemispheric patterned PDMS film of PDMS of 3 × 4 arrangements, and is covered in the top electrode figure of 3 × 4 arrangements
On, PDMS hemispherical projections layer 1 and 2 planar structure of upper electrode layer difference are as shown in Figures 2 and 3.
The lower electrode layer 5 (its planar structure is as shown in Figure 4) is the array node of M × N arrangement, and each array node is
(first in such as Fig. 5 descends electrode 51 to electrode, and second descends electrode 52, electricity under third under three circles immediately below each top electrode
Pole 53), i.e. the corresponding three lower electrodes of a top electrode；As shown in fig. 6, preparing polyimides in flexible printed circuit board substrate
Flexible membrane 4, and use lithographic technique exposes the surface of electrode under three circles；As shown in Figure 7 and Figure 8, a top electrode pair
Electrode under three circles is answered, three piezoelectric sensitivity capacitors are collectively formed with sandwich nanostructure piezoelectric membrane；One PDMS half
Hemisphere jut is just being pressed on three piezoelectric sensitivity capacitors, forms a threedimensional haptic sensor unit, and sensor unit is vertical
Body structure is as shown in Figure 9；Specifically, three piezoelectric sensitivity capacitors are distributed in the underface of hemispherical projections, and three lower electrodes
It is inscribed in the projection disc of hemispherical projections.
In the present embodiment, the threedimensional haptic sensor unit contains a PDMS hemispherical projections and three piezoelectric sensitivities
Three-dimensional contact force is transferred to three piezoelectric sensitivity capacitors by capacitor, the hemispherical projections, passes through three piezoelectric sensitivity capacitors two
End generates the size of charge to measure the size and Orientation of extraneous contact force.
As shown in Figure 1, the nanostructure piezoelectric thin film layer 3 is ZnO nano-wire piezoelectric sensitivity film, it is grown in array of figure
On the lower electrode layer of caseization distribution, and between upper/lower electrode layer, the piezoelectric sensitivity unit of M × N arrangement is formed.
In the present embodiment, polyimides is used in the threedimensional haptic sensor unit between three piezoelectric sensitivity capacitors
Flexible membrane 4, which is used as isolation film, makes three piezoelectric sensitivity electricity between upper electrode layer and flexible printed circuit board basal layer
Hold specific good electric isolution between each other, and is dielectrically separated from the threedimensional haptic sensor unit of surrounding.
In the present embodiment, the PDMS hemispherical projections layer is flexible polydimethyl siloxane material；The top electrode
Layer is the nano particle Ag film layer of 100~200nm thickness；The lower electrode is the Zn film with a thickness of 1~2 μm；The polyamides is sub-
Amine flexible membrane with a thickness of 2~3 μm.
In the present embodiment, the preparation method of the threedimensional haptic sensor array of the flexible piezoelectric formula, including the following steps:
(1) one layer of Zn film is deposited in flexible printed circuit board substrate using vacuum evaporation, and etches and forms M × N arrangement
Each array node, each array node has electrode and lead-out wire under three circles, as shown in Figure 5；
(2) the spin-on polyimide film in the flexible substrates for being covered with Zn film, and etch in removal circle Zn film surface
Kapton makes the Zn film exposure of circular portion, as shown in Figure 6；
(3) ZnO nano-wire is grown in Zn film surface using hydro-thermal steaming process, ZnO nano-wire serves as piezoelectric membrane, passes through
Control process conditions make the height of ZnO nano-wire be equal to or slightly lower than the thickness of surrounding Kapton, and do not make Zn
Film is completely converted into ZnO nano-wire, and unconverted Zn film serves as the lower electrode of piezoelectric sensitivity capacitor cell, at this time sensor unit
Structure is as shown in Figure 7；
(4) nano particle Ag ink is utilized, is formed on ZnO nano-wire and Kapton using screen printing technique
Nanometer Ag film, heat treatment form the top electrode of sensor unit, as shown in Figure 8；
(5) PDMS prepolymer mixed with curing agent with the mass ratio of 10:1, stir evenly, vacuumize bubble removing, be injected into
Aluminum alloy mould with hemispherical dimples array, places 3 hours progress curing process in 80 DEG C of insulating box, manufacture at
The surface PDMS hemispherical projections layer；
(6) the top electrode adhesive layer of the sensor unit of the lower surface to PDMS hemispherical projections layer and step (4) preparation
Upper surface carries out oxygen plasma activation, and the two surfaces are aligned and are bonded, and prepares the threedimensional haptic sensor array,
Complete sensor unit structure is as shown in Figure 9.
The embodiments described above only express several embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously
Limitations on the scope of the patent of the present invention therefore cannot be interpreted as.It should be pointed out that for those of ordinary skill in the art
For, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to guarantor of the invention
Protect range.Therefore, the scope of protection of the patent of the present invention should subject to the claims.
Claims (9)
1. a kind of threedimensional haptic sensor array of flexible piezoelectric formula, which is characterized in that its structure includes: successively to connect from top to bottom
Hemispherical projections layer (1), upper electrode layer (2), nanostructure piezoelectric thin film layer (3), lower electrode layer (5) and the flexible print connect
Printed circuit board basal layer (6)；The threedimensional haptic sensor array is by M × N number of threedimensional haptic sensor unit being separated from each other
It constitutes；
The hemispherical projections layer (1) is the hemispheric patterned film that surface has M × N arrangement, and is covered in M × N row
On the top electrode figure of cloth；The lower electrode layer (5) is the array node of M × N arrangement, and each array node is each top electrode
Electrode under three circles of underface, i.e. the corresponding three lower electrodes of a top electrode, and meanwhile it is thin with sandwich nanostructure piezoelectricity
Three piezoelectric sensitivity capacitors are collectively formed in film, and a hemispherical projections are just being pressed on three piezoelectric sensitivity capacitors, composition one
A threedimensional haptic sensor unit；
Each threedimensional haptic sensor unit contains a hemispherical projections and three piezoelectric sensitivity capacitors, and the hemispherical projections will
Three-dimensional contact force is transferred to three piezoelectric sensitivity capacitors, generates the size of charge by three piezoelectric sensitivity capacitor both ends to measure
The size and Orientation of extraneous contact force.
2. the threedimensional haptic sensor array of flexible piezoelectric formula according to claim 1, it is characterised in that: each piezoelectricity is quick
It is used as between electrification appearance using polyimide flex film (4) and is dielectrically separated from film, and be located at upper electrode layer and flexible printed circuit board
Between basal layer, make three piezoelectric sensitivity capacitors in the threedimensional haptic sensor unit that there is electric isolution between each other, and
It is dielectrically separated from the threedimensional haptic sensor unit of surrounding.
3. the threedimensional haptic sensor array of flexible piezoelectric formula according to claim 1, it is characterised in that: the three-dimensional touching
Feel in sensor unit, three piezoelectric sensitivity capacitors are distributed in the underface of hemispherical projections, and three lower electrodes are inscribed in half
In the projection disc of hemisphere jut.
4. the threedimensional haptic sensor array of flexible piezoelectric formula according to claim 1, it is characterised in that: the nano junction
Structure piezoelectric thin film layer is ZnO nano-wire piezoelectric sensitivity film, is grown on the lower electrode layer in array patterning distribution, and is located at upper
Between lower electrode layer, the piezoelectric sensitivity unit of M × N arrangement is formed.
5. the threedimensional haptic sensor array of flexible piezoelectric formula according to claim 1, it is characterised in that: the top electrode
Layer is the nano particle Ag film layer of 100~200nm thickness；The lower electrode is the Zn film with a thickness of 1~2 μm.
6. the threedimensional haptic sensor array of flexible piezoelectric formula according to claim 2, it is characterised in that: the polyamides is sub-
Amine flexible membrane with a thickness of 2~3 μm.
7. the threedimensional haptic sensor array of flexible piezoelectric formula according to claim 1, it is characterised in that: the hemispherical
Convexity layer is flexible dimethyl silicone polymer (PDMS) material.
8. the preparation method of the threedimensional haptic sensor array of described in any item flexible piezoelectric formulas according to claim 1~7,
It is characterized in that, including the following steps:
(1) one layer of Zn film is deposited in flexible printed circuit board substrate using vacuum evaporation, and etches and forms the every of M × N arrangement
A array node, each array node have electrode and lead-out wire under three circles；
(2) the spin-on polyimide film in the flexible substrates for being covered with Zn film, and etch the polyamides in removal circle Zn film surface
Imines film makes the Zn film exposure of circular portion；
(3) the growing ZnO nano-wire piezoelectric sensitivity film layer in round Zn film surface；
(4) nano particle Ag ink is utilized, nanometer is formed on ZnO nano-wire and Kapton using screen printing technique
Ag film, heat treatment form the top electrode of sensor unit；
(5) PDMS prepolymer mixed with curing agent, stir evenly, vacuumize bubble removing, be injected into hemispherical dimples array
Aluminum alloy mould in curing process, produce PDMS hemispherical projections layer；
(6) table on the top electrode adhesive layer of the sensor unit of the lower surface to PDMS hemispherical projections layer and step (4) preparation
Face carries out oxygen plasma activation, and the two surfaces are aligned and are bonded, and prepares the threedimensional haptic sensor array.
9. the preparation method of the threedimensional haptic sensor array of property piezoelectric type according to claim 8, it is characterised in that: step
Suddenly in (3), the ZnO nano-wire piezoelectric sensitivity film layer is to be formed using hydro-thermal steaming process in Zn film surface growing ZnO nano-wire
ZnO nano terminal serves as piezoelectric sensitivity film, and so that the height of ZnO nano-wire is equal to or slightly lower than its week by controlling process conditions
The thickness of the polyimide flex film enclosed, and guarantee that circle Zn film is not completely converted into ZnO nano-wire.
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|---|---|---|---|---|
| CN110031135A (en) * | 2019-05-20 | 2019-07-19 | 中国科学院重庆绿色智能技术研究院 | Tactile/sliding feeling sensor and preparation method thereof, electronic equipment, braille identify equipment, robot |
| CN110118573A (en) * | 2019-04-25 | 2019-08-13 | 华中科技大学 | It is a kind of can conformal attaching multifunction flexible sensor and its application |
| CN110455454A (en) * | 2019-06-28 | 2019-11-15 | 北京化工大学 | A kind of more array point three-dimensional force measuring methods and its device of view-based access control model |
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| CN111602950A (en) * | 2020-06-09 | 2020-09-01 | 京东方科技集团股份有限公司 | Cosmetic paper, automatic cosmetic device and method |
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| CN111765999A (en) * | 2019-04-02 | 2020-10-13 | 天津大学 | Flexible capacitive sensor based on ozone/ultraviolet radiation treatment |
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| CN111765999A (en) * | 2019-04-02 | 2020-10-13 | 天津大学 | Flexible capacitive sensor based on ozone/ultraviolet radiation treatment |
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| CN112050989A (en) * | 2020-09-24 | 2020-12-08 | 大连理工大学 | Flexible three-dimensional touch sensor for humanoid grabbing |
| CN112577644A (en) * | 2020-10-29 | 2021-03-30 | 扬州大学 | Bionic skin based on liquid core bionic cells |
| CN112665764A (en) * | 2020-12-21 | 2021-04-16 | 温州大学 | Piezoelectric type flexible slippery sensation sensor and preparation method thereof |
| CN113427500A (en) * | 2021-06-23 | 2021-09-24 | 上海大学 | Soft robot shape touch multi-mode self-powered flexible sensing system |
| CN114932568A (en) * | 2022-05-07 | 2022-08-23 | 之江实验室 | Flexible movable static pressure sensing electronic skin and preparation method thereof |
| CN115060406A (en) * | 2022-06-08 | 2022-09-16 | 北京工道风行智能技术有限公司 | Flexible ionization type three-dimensional force sensor and preparation method thereof |
| CN115060406B (en) * | 2022-06-08 | 2023-11-21 | 北京工道风行智能技术有限公司 | Flexible off-electricity type three-dimensional force sensor and preparation method thereof |
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