CN107994097B - 一种太阳能电池的制备方法 - Google Patents
一种太阳能电池的制备方法 Download PDFInfo
- Publication number
- CN107994097B CN107994097B CN201711079733.9A CN201711079733A CN107994097B CN 107994097 B CN107994097 B CN 107994097B CN 201711079733 A CN201711079733 A CN 201711079733A CN 107994097 B CN107994097 B CN 107994097B
- Authority
- CN
- China
- Prior art keywords
- silicon wafer
- solar cell
- silicon
- oxide layer
- cleaned
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000002360 preparation method Methods 0.000 title abstract description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 98
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 94
- 239000010703 silicon Substances 0.000 claims abstract description 94
- 238000000034 method Methods 0.000 claims abstract description 32
- 238000000576 coating method Methods 0.000 claims abstract description 12
- 239000011248 coating agent Substances 0.000 claims abstract description 11
- 238000004140 cleaning Methods 0.000 claims abstract description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 10
- 238000010301 surface-oxidation reaction Methods 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 11
- 238000002161 passivation Methods 0.000 abstract description 11
- 230000000694 effects Effects 0.000 abstract description 9
- 238000006243 chemical reaction Methods 0.000 abstract description 8
- 239000007888 film coating Substances 0.000 abstract description 4
- 238000009501 film coating Methods 0.000 abstract description 4
- 125000004430 oxygen atom Chemical group O* 0.000 abstract description 4
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 238000007650 screen-printing Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (4)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201711079733.9A CN107994097B (zh) | 2017-11-06 | 2017-11-06 | 一种太阳能电池的制备方法 |
PCT/CN2018/089301 WO2019085458A1 (zh) | 2017-11-06 | 2018-05-31 | 太阳能电池及其制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201711079733.9A CN107994097B (zh) | 2017-11-06 | 2017-11-06 | 一种太阳能电池的制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107994097A CN107994097A (zh) | 2018-05-04 |
CN107994097B true CN107994097B (zh) | 2020-01-21 |
Family
ID=62030585
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201711079733.9A Active CN107994097B (zh) | 2017-11-06 | 2017-11-06 | 一种太阳能电池的制备方法 |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN107994097B (zh) |
WO (1) | WO2019085458A1 (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107994097B (zh) * | 2017-11-06 | 2020-01-21 | 君泰创新(北京)科技有限公司 | 一种太阳能电池的制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102169924A (zh) * | 2011-03-11 | 2011-08-31 | 浙江贝盛光伏股份有限公司 | 晶体硅太阳能电池及其钝化方法 |
CN102959719A (zh) * | 2010-07-28 | 2013-03-06 | 三菱重工业株式会社 | 光电转换装置的制造方法 |
CN104505407A (zh) * | 2014-11-21 | 2015-04-08 | 广东爱康太阳能科技有限公司 | 一种激光刻槽埋栅电极太阳能电池及其制备方法 |
CN106449884A (zh) * | 2016-11-09 | 2017-02-22 | 中国科学院宁波材料技术与工程研究所 | 太阳能电池氧化硅层的制备方法及太阳能电池 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017188536A (ja) * | 2016-04-04 | 2017-10-12 | 日立化成株式会社 | 太陽電池素子及び太陽電池 |
CN106252424A (zh) * | 2016-08-24 | 2016-12-21 | 常州天合光能有限公司 | 热氧化改善钝化层界面的异质结电池及其制备方法 |
CN107994097B (zh) * | 2017-11-06 | 2020-01-21 | 君泰创新(北京)科技有限公司 | 一种太阳能电池的制备方法 |
-
2017
- 2017-11-06 CN CN201711079733.9A patent/CN107994097B/zh active Active
-
2018
- 2018-05-31 WO PCT/CN2018/089301 patent/WO2019085458A1/zh active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102959719A (zh) * | 2010-07-28 | 2013-03-06 | 三菱重工业株式会社 | 光电转换装置的制造方法 |
CN102169924A (zh) * | 2011-03-11 | 2011-08-31 | 浙江贝盛光伏股份有限公司 | 晶体硅太阳能电池及其钝化方法 |
CN104505407A (zh) * | 2014-11-21 | 2015-04-08 | 广东爱康太阳能科技有限公司 | 一种激光刻槽埋栅电极太阳能电池及其制备方法 |
CN106449884A (zh) * | 2016-11-09 | 2017-02-22 | 中国科学院宁波材料技术与工程研究所 | 太阳能电池氧化硅层的制备方法及太阳能电池 |
Also Published As
Publication number | Publication date |
---|---|
CN107994097A (zh) | 2018-05-04 |
WO2019085458A1 (zh) | 2019-05-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN109216509A (zh) | 一种叉指型背接触异质结太阳电池制备方法 | |
CN102299206B (zh) | 一种异质结太阳电池及其制备方法 | |
Ballif et al. | Amorphous silicon/crystalline silicon heterojunction solar cells | |
CN109285897A (zh) | 一种高效钝化接触晶体硅太阳电池及其制备方法 | |
CN105576083A (zh) | 一种基于apcvd技术的n型双面太阳能电池及其制备方法 | |
CN102655185A (zh) | 异质接面太阳能电池 | |
CN102044594A (zh) | 一种提高晶体硅太阳能电池扩散均匀性的工艺 | |
CN110137305A (zh) | 一种p型多晶硅选择性发射极双面电池的制备方法 | |
TWI390755B (zh) | 太陽能電池的製造方法 | |
CN111883621A (zh) | 一种高效晶硅异质结太阳能电池的tco镀膜工艺方法 | |
CN103050573B (zh) | 一种背钝化电池的制备方法 | |
CN104134706B (zh) | 一种石墨烯硅太阳电池及其制作方法 | |
Korte et al. | Overview on a-Si: H/c-Si heterojunction solar cells-physics and technology | |
CN107994097B (zh) | 一种太阳能电池的制备方法 | |
CN104332512B (zh) | 一种微晶硅薄膜太阳能电池及其制备方法 | |
CN103137770A (zh) | 一种石墨烯/Si p-n 双结太阳能电池及其制备方法 | |
CN106449850A (zh) | 一种高效硅基异质结双面电池及其制备方法 | |
CN112030143A (zh) | 一种用于a-Si/c-Si异质结太阳电池的高效非晶硅钝化膜的制备方法 | |
CN113921649A (zh) | 一种硅基异质结太阳能电池制备方法 | |
CN104009114B (zh) | 准单晶硅太阳能电池片的制造方法 | |
CN102522453B (zh) | 一种场效应晶体硅太阳能电池的制作方法 | |
US20150187979A1 (en) | Heterojunction solar cell with epitaxial silicon thin film and method for preparing the same | |
CN109300999A (zh) | 一种高效晶硅太阳能电池制备方法及其制备的电池 | |
CN114843175A (zh) | 一种n型掺杂氧化微晶硅、异质结太阳能电池及两者的制备方法 | |
CN103996742B (zh) | 一种改善晶体硅太阳电池电性能的边缘刻蚀方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210114 Address after: 101102 102-lq307, 1-3 / F, building 26, 17 huanke Middle Road, Jinqiao Science and technology industrial base, Tongzhou Park, Zhongguancun Science and Technology Park, Tongzhou District, Beijing Patentee after: Deyun Chuangxin (Beijing) Technology Co.,Ltd. Address before: 100176 Beijing Daxing District Beijing Economic and Technological Development Zone, No. 66 Building, No. 2 Jingyuan North Street, 7th Floor 805 Patentee before: Juntai innovation (Beijing) Technology Co.,Ltd. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20220510 Address after: 517583 east area, second floor, Kaijing office building, butterfly Ridge Industrial Park, Dongyuan County, Heyuan City, Guangdong Province Patentee after: Guangdong Hanyu new energy Co.,Ltd. Address before: 101102 102-lq307, 1-3 / F, building 26, 17 huanke Middle Road, Jinqiao Science and technology industrial base, Tongzhou Park, Zhongguancun Science and Technology Park, Tongzhou District, Beijing Patentee before: Deyun Chuangxin (Beijing) Technology Co.,Ltd. |