CN107994097A - 一种太阳能电池的制备方法 - Google Patents
一种太阳能电池的制备方法 Download PDFInfo
- Publication number
- CN107994097A CN107994097A CN201711079733.9A CN201711079733A CN107994097A CN 107994097 A CN107994097 A CN 107994097A CN 201711079733 A CN201711079733 A CN 201711079733A CN 107994097 A CN107994097 A CN 107994097A
- Authority
- CN
- China
- Prior art keywords
- silicon chip
- preparation
- solar cell
- cleaning
- silicon wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 109
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 108
- 239000010703 silicon Substances 0.000 claims abstract description 105
- 238000004140 cleaning Methods 0.000 claims abstract description 34
- 238000000034 method Methods 0.000 claims abstract description 9
- 238000010301 surface-oxidation reaction Methods 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 8
- 230000003647 oxidation Effects 0.000 claims description 7
- 238000007254 oxidation reaction Methods 0.000 claims description 7
- 238000007650 screen-printing Methods 0.000 claims description 7
- 238000006701 autoxidation reaction Methods 0.000 claims description 5
- 235000008216 herbs Nutrition 0.000 claims description 5
- 210000002268 wool Anatomy 0.000 claims description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 11
- 238000002161 passivation Methods 0.000 abstract description 11
- 230000009286 beneficial effect Effects 0.000 abstract description 9
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 125000004430 oxygen atom Chemical group O* 0.000 abstract description 4
- 238000000576 coating method Methods 0.000 abstract description 3
- 239000011248 coating agent Substances 0.000 abstract 2
- 239000007888 film coating Substances 0.000 abstract 1
- 238000009501 film coating Methods 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Description
Claims (10)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201711079733.9A CN107994097B (zh) | 2017-11-06 | 2017-11-06 | 一种太阳能电池的制备方法 |
PCT/CN2018/089301 WO2019085458A1 (zh) | 2017-11-06 | 2018-05-31 | 太阳能电池及其制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201711079733.9A CN107994097B (zh) | 2017-11-06 | 2017-11-06 | 一种太阳能电池的制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107994097A true CN107994097A (zh) | 2018-05-04 |
CN107994097B CN107994097B (zh) | 2020-01-21 |
Family
ID=62030585
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201711079733.9A Active CN107994097B (zh) | 2017-11-06 | 2017-11-06 | 一种太阳能电池的制备方法 |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN107994097B (zh) |
WO (1) | WO2019085458A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019085458A1 (zh) * | 2017-11-06 | 2019-05-09 | 君泰创新(北京)科技有限公司 | 太阳能电池及其制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102169924A (zh) * | 2011-03-11 | 2011-08-31 | 浙江贝盛光伏股份有限公司 | 晶体硅太阳能电池及其钝化方法 |
CN102959719A (zh) * | 2010-07-28 | 2013-03-06 | 三菱重工业株式会社 | 光电转换装置的制造方法 |
CN104505407A (zh) * | 2014-11-21 | 2015-04-08 | 广东爱康太阳能科技有限公司 | 一种激光刻槽埋栅电极太阳能电池及其制备方法 |
CN106449884A (zh) * | 2016-11-09 | 2017-02-22 | 中国科学院宁波材料技术与工程研究所 | 太阳能电池氧化硅层的制备方法及太阳能电池 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017188536A (ja) * | 2016-04-04 | 2017-10-12 | 日立化成株式会社 | 太陽電池素子及び太陽電池 |
CN106252424A (zh) * | 2016-08-24 | 2016-12-21 | 常州天合光能有限公司 | 热氧化改善钝化层界面的异质结电池及其制备方法 |
CN107994097B (zh) * | 2017-11-06 | 2020-01-21 | 君泰创新(北京)科技有限公司 | 一种太阳能电池的制备方法 |
-
2017
- 2017-11-06 CN CN201711079733.9A patent/CN107994097B/zh active Active
-
2018
- 2018-05-31 WO PCT/CN2018/089301 patent/WO2019085458A1/zh active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102959719A (zh) * | 2010-07-28 | 2013-03-06 | 三菱重工业株式会社 | 光电转换装置的制造方法 |
CN102169924A (zh) * | 2011-03-11 | 2011-08-31 | 浙江贝盛光伏股份有限公司 | 晶体硅太阳能电池及其钝化方法 |
CN104505407A (zh) * | 2014-11-21 | 2015-04-08 | 广东爱康太阳能科技有限公司 | 一种激光刻槽埋栅电极太阳能电池及其制备方法 |
CN106449884A (zh) * | 2016-11-09 | 2017-02-22 | 中国科学院宁波材料技术与工程研究所 | 太阳能电池氧化硅层的制备方法及太阳能电池 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019085458A1 (zh) * | 2017-11-06 | 2019-05-09 | 君泰创新(北京)科技有限公司 | 太阳能电池及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2019085458A1 (zh) | 2019-05-09 |
CN107994097B (zh) | 2020-01-21 |
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Effective date of registration: 20210114 Address after: 101102 102-lq307, 1-3 / F, building 26, 17 huanke Middle Road, Jinqiao Science and technology industrial base, Tongzhou Park, Zhongguancun Science and Technology Park, Tongzhou District, Beijing Patentee after: Deyun Chuangxin (Beijing) Technology Co.,Ltd. Address before: 100176 Beijing Daxing District Beijing Economic and Technological Development Zone, No. 66 Building, No. 2 Jingyuan North Street, 7th Floor 805 Patentee before: Juntai innovation (Beijing) Technology Co.,Ltd. |
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Effective date of registration: 20220510 Address after: 517583 east area, second floor, Kaijing office building, butterfly Ridge Industrial Park, Dongyuan County, Heyuan City, Guangdong Province Patentee after: Guangdong Hanyu new energy Co.,Ltd. Address before: 101102 102-lq307, 1-3 / F, building 26, 17 huanke Middle Road, Jinqiao Science and technology industrial base, Tongzhou Park, Zhongguancun Science and Technology Park, Tongzhou District, Beijing Patentee before: Deyun Chuangxin (Beijing) Technology Co.,Ltd. |
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