CN107978545A - 晶片舟组件及包含晶片舟组件的衬底处理设备 - Google Patents

晶片舟组件及包含晶片舟组件的衬底处理设备 Download PDF

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CN107978545A
CN107978545A CN201710852812.2A CN201710852812A CN107978545A CN 107978545 A CN107978545 A CN 107978545A CN 201710852812 A CN201710852812 A CN 201710852812A CN 107978545 A CN107978545 A CN 107978545A
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pedestal
gas
wafer boat
rotational structure
boat component
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杨尚烈
全教准
李根泽
林钟欣
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
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    • H—ELECTRICITY
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    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6732—Vertical carrier comprising wall type elements whereby the substrates are horizontally supported, e.g. comprising sidewalls
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Abstract

本申请提供晶片舟组件及包含晶片舟组件的衬底处理设备。一种晶片舟组件包括舟、基座和底座。所述舟包括承托晶片的槽和包含气体管线的杆。所述基座包括第一表面、与所述第一表面相反的第二表面以及与所述气体管线耦接的连接管线。所述底座位于所述基座的第二表面上，使所述基座旋转，并向所述连接管线供应气体。所述舟位于所述基座的第一表面上。所述气体沿所述气体管线流动，并从所述杆与所述晶片接触的位置被喷散，以使所述晶片浮起。

Description

晶片舟组件及包含晶片舟组件的衬底处理设备
相关申请的交叉引用
通过引用将2016年10月25日提交的发明名称为“Wafer Boat Assembly andSubstrate Processing Apparatus Including the Same”的韩国专利申请No.10-2016-0139532全文并入本文。
技术领域
本文中描述的一个或多个实施例涉及晶片舟组件以及包括晶片舟组件的衬底处理设备。
背景技术
可以采用各种工艺制造半导体器件。例子包括光刻、蚀刻、扩散、化学气相沉积和离子注入。可以对一个或多个晶片有选择地和/或重复地执行这些工艺。例如，可以采用化学气相沉积在晶片上形成薄膜。在这样的工艺中，将晶片垂直堆叠在反应室中的舟内，之后对其加热。在处理过程中可能发生很多问题。在高温处理过程中可能出现的一个问题是晶片翘曲。这一问题可能会在晶片与所述舟物理接触的位置处导致缺陷(例如，刮擦(scratch)、滑移(slip)等)。
发明内容
根据一个或更多个实施例，一种晶片舟组件包括：舟，其包括承托晶片的槽和包含气体管线的杆；基座，其包括第一表面、与所述第一表面相反的第二表面以及与所述气体管线耦接的连接管线；以及底座，其位于所述基座的第二表面上，使所述基座旋转并向所述连接管线供应气体，其中所述舟位于所述基座的第一表面上，并且其中所述气体沿所述气体管线流动，并从所述杆与所述晶片接触的位置被喷散，以便使所述晶片浮起。
根据一个或更多个其它实施例，一种衬底处理设备包括工艺管以及晶片舟组件。所述晶片舟组件包括：舟，其包括承托晶片的槽和包含气体管线的杆；基座，其包括第一表面、与所述第一表面相反的第二表面以及与所述气体管线耦接的连接管线；以及底座，其位于所述基座的第二表面上，使所述基座旋转并向所述连接管线供应气体，其中所述舟位于所述基座的第一表面上，并且其中所述气体沿所述气体管线流动，并从所述杆与所述晶片接触的位置被喷散，以便使所述晶片浮起。
根据一个或更多个其它施例，一种晶片舟组件包括：舟，其包括具有内部气体管线的杆；基座，其具有与所述气体管线耦接的连接管线；以及底座，其使所述基座旋转并向所述连接管线供应气体，其中所述气体被喷散以使晶片浮起。
附图说明
通过参考附图详细描述示例性实施例，各特征对于本领域技术人员而言将变得显而易见，在附图中：
图1示出了衬底处理设备的实施例；
图2示出了舟的实施例；
图3示出了舟内的部分A的实施例；
图4示出了根据一个实施例的、舟位于基座上并连接至该基座的状态；
图5示出了晶片舟组件内的底座单元的实施例；并且
图6示出了根据一个实施例的、在晶片舟组件内底座单元连接至基座和舟的状态。
具体实施方式
图1示出了衬底处理设备1的实施例的截面图，衬底处理设备1可以具有垂直型反应室结构并且可以包括工艺管10和侧壁绝缘构件20。
工艺管10可以在与反应腔对应的高度方向上垂直延伸。工艺管10可以包括位于外管11中的内管12。内管12可以具有包括开放的上部和开放的下部的预定(例如，圆柱形)形状。内管12可以容纳舟100，多个晶片W在垂直方向(例如，高度方向)上堆叠在所述舟内。
外管11可以具有包括闭合的上部和开放的下部的预定(例如，圆柱形)形状，并且可以密封内管12。外管11的上部可以具有例如类似于穹顶形状的凸面结构。外管11和内管12可以由例如耐热材料形成，所述耐热材料例如为石英和碳化硅。
侧壁绝缘构件20可以具有预定(例如，基本呈圆柱形的)形状。侧壁绝缘构件20可以具有内部空间S，并且可以将工艺管10容纳于其内。侧壁绝缘构件20可以由例如具有高绝缘性能的材料(例如，陶瓷)形成。
加热线路可以位于侧壁绝缘构件20的内表面上，从而对工艺管10加热。所述加热线路可以在从侧壁绝缘构件20的下端部向着其上端部的方向上、在侧壁绝缘构件20的内表面上延伸为具有螺旋形式。所述加热线路可以从外部电源接收电力，以便将所述内部空间S加热到预定温度分布。
岐管30可以用于支撑工艺管10。歧管30可以位于外管11下方，并且具有包括开放的上部和开放的下部的预定的(例如，基本呈圆柱形的)形状。歧管30可以由钢或者另外的材料制成。
外管11的开放的下端部可以具有在径向上突出的凸缘11a。凸缘11a可以位于岐管30上从而被支撑。内管12的开放的下端部的凸缘12a可以位于岐管30上从而被支撑。可以通过位于凸缘11a与岐管30之间的密封构件(例如，O形环)密封外管11。
引入管道31可以位于岐管30内，从而将工艺气体喷散到工艺管10内。引入管道31可以由例如石英、不锈钢或合金制成。
引入管道31可以连接至包括质量流量控制器(MFC)的气体供应管道。引入管道31可以通过MFC在期望时间供应预定量的工艺气体。引入管道31可以提供用于沉积工艺的工艺气体。气体源可以提供所述工艺气体，从而例如沉积预定的膜，例如氧化硅膜或氮化硅膜。
排气管道32可以位于歧管30上，从而将工艺管10内的气体向其外部排出。排气管道32可以连接至内管12与外管11之间的空间。排气管道32可以连接至排气系统(例如，真空泵)，并且可以执行真空排气过程，从而将工艺管内的压强设定到预定压强水平(例如，某一真空度)。
晶片舟组件40可以位于歧管30下方，从而可以将上面安装了多个晶片W的舟100插入到工艺管10中或者从工艺管10抽出。晶片舟组件40可以包括其上安装了多个晶片W的舟100、舟100置于其上的基座200以及连接至基座200的底座单元300。
图2示出了舟100的实施例，图3示出了舟100内的部分A的截面图。
参考图2和图3，舟100可以包括至少一个连接顶板110和底板120的杆130。舟100可以由例如在高温过程中耐热形变并且具有高耐腐蚀性的材料制成，例如，由陶瓷材料制成。在一个实施例中，提供多个杆130，并且所述杆130可以包括在其内表面上以特定间隔排列的槽131。晶片W可以与杆130接触地承托在各个槽131内。杆130可以包括位于其内的气体管线132以及喷嘴133，喷嘴133在杆130与晶片W在槽131内接触的位置处连接至气体管线132。舟100可以位于基座200的一个表面上并可以与之耦接。
图4示出了舟100位于基座200上并与之连接的状态。基座200具有预定的(例如，盘型的)结构，该结构的直径例如充分大于舟100的底板120的直径。基座200可以包括在第一表面上连接至气体管线132的连接管线210、以及在与所述第一表面相反的第二表面上连接至连接管线210的开口220。所述第一表面可以对应于基座200的上表面。所述第二表面可以面对底座单元300(例如，见图5)，并且可以对应于基座200的下表面。底座单元300可以位于基座200的第二表面上，使基座200旋转，并且向连接管线210供应气体。
图5和图6示出了底座单元300的实施例。图5是晶片舟组件内的底座单元300的局部剖面透视图。图6示出了根据示例性实施例的、晶片舟组件内底座单元300连接至基座200和舟100的状态的截面图。
参考图5和图6，底座单元300可以包括气体供应管道310、旋转构件320、外壳330和磁性密封部340。底座单元300可以具有这样的结构，其中，旋转构件320和外壳330被布置为形成以气体供应管道310为中心的同心圆。气体供应管道310可以位于底座单元300的中央区域，并且可以对应于底座单元300的轴。气体供应管道310可以具有管道型结构，该管道型结构具有开放的末端以及面对基座200的开口220的上端部。
气体供应管道310的下端部可以连接至气体储存室400，从而将气体储存室400内储存的气体g通过开口220供应到连接管线210。气体g可以沿杆130内的气体管线132流动，并且可以通过槽131的喷嘴133被喷散，由此使晶片W浮起。因此，晶片W可以不与杆130物理接触。气体g可以包括例如氮气、氢气、氦气或者氩气。
气体供应管道310可以连接至MFC，并控制气体g的供应流量、压强、和/或其它参数。
旋转构件320可以具有预定(例如，基本呈圆柱形)的结构并且可以围绕气体供应管道310。旋转构件320可以连接至基座200的下表面，并且可以接收来自外部驱动源500的旋转力，从而使基座200旋转。例如，可以使用螺钉连接法，将旋转构件320连接至基座200。O形环301可以位于旋转构件320与基座200之间的接触表面上。所述O形环301可以围绕开口220，以防止通过气体供应管道310提供的气体g泄漏。
外壳330可以具有围绕旋转构件320的结构，并且可以将气体供应管道310和旋转构件320容纳于其内。外壳330可以包括例如焊接金属波纹管。
磁性密封部340可以位于气体供应管道310和围绕气体供应管道310的旋转构件320之间。磁性密封部340可以位于旋转构件320与围绕旋转构件320的外壳330之间。磁性密封部340可以密封气体供应管道310与围绕气体供应管道310的旋转构件320之间的空间。磁性密封部340还可以密封旋转构件320与围绕旋转构件320的外壳330之间的空间，由此防止工艺管100内的气体漏出。
磁性密封部340可以是例如磁性流体密封件，所述磁性流体密封件包括一对磁性构件341、位于所述磁性构件341之间的磁体342以及位于磁性构件341的前表面上的磁性流体343。
磁性密封部340可以在固定的磁体342与旋转体之间引发磁力。磁性密封部340可以允许在磁性流体343被注入到磁性构件341与所述旋转体之间时，在磁性构件341与所述旋转体之间形成膜(例如，O形环)，从而提供密封的部分。可以将所述磁性流体密封件提供为非接触型密封件。在这种情况下，当所述旋转体旋转时，所述磁性流体密封件基本不会在所述磁性流体密封件与旋转体之间引起摩擦。
在示例性实施例中，供应气体g的气体供应管道310和使舟100旋转的旋转构件320可以在外壳330内形成同心圆。这一结构可以形成在旋转构件320的内侧和外侧都具有磁性密封部340的孪式磁性流体密封件。因此，即使旋转构件320旋转，也可以实现密封。
第一轴承351可以位于气体供应管道310与旋转构件320之间。第二轴承352可以位于旋转构件320与外壳330之间并且位于磁性密封部340内。第一轴承351和第二轴承352可以在上述位置处位于磁性密封部340的相对侧。第一轴承351和第二轴承352可以在气体供应管道310与外壳330之间支撑旋转构件320，以便允许旋转构件320旋转。
外壳330可以安装到框架单元360内并且可以被固定。框架单元360可以包括上框架361、下框架362以及连接上框架361和下框架362的连接框架363。外壳330可以位于上框架361与下框架362之间并且可以连接到连接框架363，从而与气体供应管道310一起固定到框架单元360。旋转构件320可以位于外壳330与气体供应管道310之间，并且可以利用第一轴承351和第二轴承352使旋转构件320旋转。
密封帽50可以位于基座200和底座单元300之间。密封帽50可以密封工艺管10的内部，以覆盖歧管30的开放的下部。舟100和基座200可以位于工艺管10内。
框架单元360的上框架361可以附着到密封帽50的下表面。O形环302可以位于上框架361与密封帽50之间的接触表面上。旋转构件320和气体供应管道310可以穿过密封帽50的中心孔51连接至基座200。
在将舟100插入到工艺管10内或者将舟100从工艺管10抽出的过程中以及在完成沉积过程之后使工艺管10内的温度下降的过程中，底座单元300可以不使基座200和舟100旋转。在基座200不旋转时，可以增加通过气体供应管道310供应的气体g的压强水平，从而使晶片W浮起。因此，晶片W和杆130可以保持在分离状态下。
在将舟100插入到工艺管10内或者将舟100从工艺管10抽出的过程中以及在完成沉积过程之后使工艺管10内的温度下降的过程中，晶片W的温度可能快速变化。由于温度快速变化，晶片W可能具有缺陷，例如，由于晶片W与舟100之间的热膨胀系数差导致的在晶片W与杆130接触的位置处的刮擦。在温度快速变化时，底座单元300可以使旋转构件320停止旋转，并且可以增加通过气体供应管道310供应的气体g的压强水平。因此，晶片W和杆130可以保持分离状态。因此，可以避免在晶片W与杆130接触的位置处发生缺陷或者可以降低在所述位置处发生缺陷的可能性。
在使基座200旋转以进行沉积过程时，底座单元300可以降低通过气体供应管道310供应的气体g的压强水平，由此保持晶片W与杆130之间的接触状态。
根据上述实施例中的一个或多个，可以提供减少在晶片与舟接触的位置处出现的缺陷或者使所述缺陷最少的晶片舟组件以及包括晶片舟组件的衬底处理设备。
本文中公开了示例性实施例，尽管使用了特定的术语，但是只是在一般的描述性意义上而并非为了限制的目的来使用和解释这些术语。在一些情况下，对于本申请提交之时的本领域技术人员显而易见的是，关于特定实施例描述的特征、特点和/或元件可以单独使用，也可以结合关于其它实施例描述的特征、特点和/或元件使用，除非另外指出。相应地，本领域技术人员应当理解，在不背离下述权利要求所阐述的本发明的实质和范围的情况下可以做出各种形式和细节上的改变。

Claims (20)

1.一种晶片舟组件，包括：
舟，其包括承托晶片的槽和包含气体管线的杆；
基座，其包括第一表面、与所述第一表面相反的第二表面以及与所述气体管线耦接的连接管线；以及
底座，其位于所述基座的第二表面上，使所述基座旋转并向所述连接管线供应气体，
其中所述舟位于所述基座的第一表面上，并且其中所述气体沿所述气体管线流动，并从所述杆与所述晶片接触的位置被喷散，以便使所述晶片浮起。
2.根据权利要求1所述的晶片舟组件，其中，所述底座包括：
使所述基座旋转的旋转结构，所述旋转结构具有连接至所述基座的第二表面的圆柱形状；
气体供应管道，其位于所述旋转结构的中央部分内，向所述连接管线供应所述气体；
外壳，其容纳所述气体供应管道和所述旋转结构；以及
磁性密封件，其位于所述气体供应管道与围绕所述气体供应管道的所述旋转结构之间，并且位于所述旋转结构与围绕所述旋转结构的所述外壳之间。
3.根据权利要求2所述的晶片舟组件，其中所述旋转结构和所述外壳形成了以所述气体供应管道为中心的同心圆。
4.根据权利要求2所述的晶片舟组件，还包括：
位于所述气体供应管道与所述旋转结构之间的第一轴承；以及
位于所述旋转结构与所述外壳之间的第二轴承，其中所述第一轴承和所述第二轴承在所述气体供应管道与所述外壳之间支撑所述旋转结构，以便允许所述旋转结构旋转。
5.根据权利要求2所述的晶片舟组件，还包括：
框架，所述外壳安装在该框架上，
其中所述旋转结构接收来自外部驱动源的旋转力，并且在所述外壳与所述气体供应管道之间旋转，并且其中所述外壳和所述气体供应管道被固定至所述框架。
6.根据权利要求4所述的晶片舟组件，其中所述第一轴承和所述第二轴承位于所述磁性密封件的相对侧。
7.根据权利要求5所述的晶片舟组件，其中所述框架包括：
上框架，
下框架，以及
连接框架，
其中所述连接框架连接所述上框架和所述下框架，并且其中所述外壳连接至所述连接框架。
8.根据权利要求2所述的晶片舟组件，其中，所述磁性密封件是磁性流体密封件，所述磁性流体密封件包括一对磁性部分、位于所述磁性部分之间的磁体以及位于所述磁性部分的前表面上的磁性流体。
9.根据权利要求1所述的晶片舟组件，其中，所述杆包括在所述杆与所述晶片接触的位置处连接至所述气体管线的喷嘴。
10.根据权利要求1所述的晶片舟组件，其中，所述基座包括在所述基座面对所述底座的所述第二表面上连接至所述连接管线的开口。
11.根据权利要求10所述的晶片舟组件，其中，所述开口相对于所述底座的轴位于同一轴上。
12.一种衬底处理设备，包括：
工艺管；以及
晶片舟组件，该晶片舟组件包括：
舟，其包括承托晶片的槽和包含气体管线的杆；
基座，其包括第一表面、与所述第一表面相反的第二表面以及与所述气体管线耦接的连接管线；以及
底座，其位于所述基座的第二表面上，使所述基座旋转并向所述连接管线供应气体，
其中所述舟位于所述基座的第一表面上，并且其中所述气体沿所述气体管线流动，并从所述杆与所述晶片接触的位置被喷散，以便使所述晶片浮起。
13.根据权利要求12所述的衬底处理设备，其中：
所述底座包括密封帽，
所述密封帽在所述舟和所述基座位于所述工艺管内的情况下密封所述工艺管的内部。
14.根据权利要求12所述的衬底处理设备，其中：
在所述基座不旋转时，所述底座增加所述气体的压强水平，从而保持所述晶片和所述杆处于分离状态，并且
在所述基座旋转时，所述底座降低所述气体的压强水平，从而保持所述晶片和所述杆之间的接触状态。
15.根据权利要求12所述的衬底处理设备，还包括连接至所述底座以提供旋转力的驱动源。
16.一种晶片舟组件，包括：
舟，其包括具有内部气体管线的杆；
基座，其具有与所述气体管线耦接的连接管线；以及
底座，其使所述基座旋转并向所述连接管线供应气体，
其中所述气体被喷散以使晶片浮起。
17.根据权利要求16所述的晶片舟组件，其中：
所述基座包括连接至所述连接管线的开口，并且
所述开口位于与所述底座的轴相同的轴上。
18.根据权利要求16所述的晶片舟组件，其中所述底座包括：
向所述连接管线供应所述气体的气体供应管道，
旋转所述基座的旋转结构，
容纳所述气体供应管道和所述旋转结构的外壳，以及
位于所述气体供应管道与所述旋转结构之间以及所述旋转结构与所述外壳之间的磁性密封件。
19.根据权利要求18所述的晶片舟组件，还包括：
第一轴承；以及
第二轴承，
其中所述第一轴承和所述第二轴承位于所述磁性密封件的不同侧。
20.根据权利要求18所述的晶片舟组件，其中所述磁性密封件是磁性流体密封件，所述磁性流体密封件包括一对磁性部分、位于所述磁性部分之间的磁体以及位于所述磁性部分的前表面上的磁性流体。
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