CN107942615B - IGBT or MOSFET layout structure for electric automobile - Google Patents
IGBT or MOSFET layout structure for electric automobile Download PDFInfo
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- CN107942615B CN107942615B CN201711408786.0A CN201711408786A CN107942615B CN 107942615 B CN107942615 B CN 107942615B CN 201711408786 A CN201711408786 A CN 201711408786A CN 107942615 B CN107942615 B CN 107942615B
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- 238000000034 method Methods 0.000 description 6
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/60—Substrates
Abstract
The invention belongs to the technical field of electric automobile transistors, and particularly relates to an IGBT or MOSFET layout structure for an electric automobile. The IGBT or MOSFET plate is provided with a plurality of rows of grooves at intervals, the grooves in the same row are repeatedly disconnected, the disconnection interval of the grooves in the same row is 0.6um, the emitter contact holes are arranged in the middle of the disconnection interval of the grooves in the same row, the interval between the emitter contact holes and the adjacent grooves is 0.2um, the grooves in the adjacent two rows are arranged in a staggered mode and are transversely connected, and the interval between the grooves in the adjacent two rows is 0.2um. The invention reduces the cell size and increases the channel density through the layout design of the groove and the emitter contact hole, thereby greatly improving the current density, greatly reducing the chip size of the IGBT or the MOSFET, reducing the cost and simultaneously ensuring more sufficient margin of the whole design.
Description
Technical Field
The invention belongs to the technical field of electric automobile transistors, and particularly relates to an IGBT or MOSFET layout structure for an electric automobile.
Background
With the rapid development of industries such as electric automobiles, a higher challenge is presented to an insulated gate bipolar transistor or a metal oxide semiconductor field effect transistor (IGBT or MOSFET for short), one of which is to require that the power capacity is continuously increased, that is, that the unit current density of the IGBT is as high as possible. To achieve the purpose, a very effective measure is to shrink the cell size of the chip again and again to increase the current density, and some advanced techniques nowadays can shrink the cell size of the IGBT to 0.8um, and the current density can reach 380A/cm 2 . However, the cell size continues to shrink, which is a practical processThe capability and the process design rule are limited, wherein the most critical item is limited by the process size of the IGBT emitter hole or the MOSFET source hole and the design rule of the IGBT emitter hole or the MOSFET source hole to the trench groove, so that the continuous reduction of the cell size of the IGBT or the MOSFET becomes extremely difficult or even impossible.
Disclosure of Invention
Aiming at the defects existing in the prior art, the invention provides an IGBT or MOSFET layout structure for an electric automobile, which is based on a groove or a composite groove, reduces the cell size of the IGBT or MOSFET, improves the current density and reduces the cost.
In order to achieve the above object, the present invention is realized by the following technical scheme:
the utility model provides an IGBT or MOSFET layout structure for electric automobile, its includes IGBT or MOSFET version, the interval sets up a plurality of grooves of row on IGBT or the MOSFET version, same groove repeated disconnection of row, same groove disconnection interval 0.6um of row, same groove disconnection interval's centre sets up the projecting pole contact hole, projecting pole contact hole and adjacent interval between the slot is 0.2um, adjacent two are listed as the dislocation of slot sets up and transverse connection, adjacent two the interval between the slot is 0.2um.
According to the IGBT or MOSFET layout structure for the electric automobile, the top end of the n-th row of grooves is connected with the bottom end of the n+1th row of grooves, the top end of the n+1th row of grooves is connected with the middle part of the n+2th row of grooves, the top end of the n+2th row of grooves is connected with the bottom end of the n+3th row of grooves, the top end of the n+3th row of grooves is connected with the middle part of the n+4th row of grooves, and the like to form two-dimensional arrangement grooves.
The design solves the problem that the continuous reduction of the cell size of the IGBT or the MOSFET becomes extremely difficult or even impossible due to the process size of the IGBT emitter hole or the MOSFET source hole and the limit of the design rule of the IGBT or the MOSFET source hole to the trench.
According to the IGBT or MOSFET layout structure for the electric automobile, the length of the groove is larger than 1.6um and smaller than 10um. The invention is mainly applied to the field of transistors for electric automobiles, but is not limited to the field, and also comprises other application fields requiring high current density and small volume for IGBT or MOSFET.
The beneficial effects are that:
according to the invention, through the special connection design of the grooves and the contact holes, the design rule meeting the capability of the existing process is ensured, so that the cell size of the IGBT or the MOSFET is reduced, the channel density is increased, the current density is greatly improved, meanwhile, the reasonable groove breaking density can ensure that the channel loss is reduced as much as possible, the opening uniformity is not reduced, compared with the same current requirement, the chip size of the IGBT or the MOSFET can be greatly reduced, the cost is reduced, and the allowance of the whole design is also more sufficient.
Drawings
The invention is described in detail below with reference to the drawings and the detailed description;
fig. 1 is a schematic structural view of the present invention.
Detailed Description
The invention is further described in connection with the following detailed description, in order to make the technical means, the creation characteristics, the achievement of the purpose and the effect of the invention easy to understand.
Examples
Referring to fig. 1, the present invention includes an IGBT or MOSFET plate 1, a plurality of columns of grooves 2 are arranged on the IGBT or MOSFET plate 1 at intervals, the grooves 2 in the same column are repeatedly disconnected, the disconnection space of the grooves 2 in the same column is 0.6um, the middle of the disconnection space of the grooves 2 in the same column is provided with an emitter contact hole 3, the space between the emitter contact hole 3 and the adjacent grooves 2 is 0.2um, two adjacent columns of grooves 2 are arranged in a staggered manner and are transversely connected, the top end of the groove 2 in the nth column is connected with the bottom end of the groove 2 in the n+1th column, the top end of the groove 2 in the n+1th column is connected with the middle of the groove 2 in the n+2th column, the top end of the groove 2 in the n+3th column is connected with the middle of the groove 2 in the n+4th column, and the like to form a two-dimensional arrangement groove. The interval between two adjacent columns of grooves 2 is 0.2um. The length of the groove 2 is more than 1.6um and less than 10um.
The overall cell size of the present invention can be reduced to 0.4um, which means that the channel density is doubled and the overall current density is doubled. The same row of grooves are not continuous any more and are repeatedly disconnected, the distance between every two adjacent rows of grooves is 0.2um, the contact holes are not located between every two adjacent rows of grooves, and the distance between every two adjacent rows of grooves is 0.2um, namely the distance between every two adjacent rows of grooves is 0.6um, in order to ensure that every two adjacent rows of grooves can be connected with a gate electrode, so that every n rows of grooves are transversely connected with every n+1 rows of grooves, and the whole layout design grooves are transversely two-dimensionally distributed from one-dimensional arrangement. The density of the broken grooves and the inserted contact holes is that the broken grooves, namely the areas can not form channels, so that the broken grooves are too dense, a part of channels can be lost, if the broken grooves are too sparse, the contact holes can be too few, the whole device is not conducted uniformly, and therefore the length of the broken grooves is generally larger than 1.6um and smaller than 10um.
According to the invention, through the special connection design of the grooves and the contact holes, the design rule meeting the capability of the existing process is ensured, so that the cell size of the IGBT or the MOSFET is reduced, the channel density is increased, the current density is greatly improved, meanwhile, the reasonable groove breaking density can ensure that the channel loss is reduced as much as possible, the opening uniformity is not reduced, compared with the same current requirement, the chip size of the IGBT or the MOSFET can be greatly reduced, the cost is reduced, and the allowance of the whole design is also more sufficient.
The foregoing has shown and described the basic principles and main features of the present invention and the advantages of the present invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, and that the above embodiments and descriptions are merely illustrative of the principles of the present invention, and various changes and modifications may be made without departing from the spirit and scope of the invention, which is defined in the appended claims. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (1)
1. An IGBT or MOSFET layout structure for an electric automobile is characterized in that: the IGBT or MOSFET plate is provided with a plurality of rows of grooves at intervals, the grooves in the same row are repeatedly disconnected, the disconnection interval of the grooves in the same row is 0.6um, the middle of the disconnection interval of the grooves in the same row is provided with an emitter contact hole, the interval between the emitter contact hole and the adjacent grooves is 0.2um, the grooves in the adjacent two rows are arranged in a staggered mode and are transversely connected, and the interval between the grooves in the adjacent two rows is 0.2um;
the top end of the groove in the n-th row is connected with the bottom end of the groove in the n+1th row, the top end of the groove in the n+1th row is connected with the middle part of the groove in the n+2th row, the top end of the groove in the n+2th row is connected with the bottom end of the groove in the n+3th row, the top end of the groove in the n+3th row is connected with the middle part of the groove in the n+4th row, and the like to form a two-dimensional arrangement groove; the length of the groove is greater than 1.6um and less than 10um.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711408786.0A CN107942615B (en) | 2017-12-22 | 2017-12-22 | IGBT or MOSFET layout structure for electric automobile |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711408786.0A CN107942615B (en) | 2017-12-22 | 2017-12-22 | IGBT or MOSFET layout structure for electric automobile |
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| Publication Number | Publication Date |
|---|---|
| CN107942615A CN107942615A (en) | 2018-04-20 |
| CN107942615B true CN107942615B (en) | 2024-03-22 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201711408786.0A Active CN107942615B (en) | 2017-12-22 | 2017-12-22 | IGBT or MOSFET layout structure for electric automobile |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114242716A (en) * | 2021-12-10 | 2022-03-25 | 恒泰柯半导体（上海）有限公司 | Deep channel type power device layout structure, semiconductor power device and electronic equipment |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007134500A (en) * | 2005-11-10 | 2007-05-31 | Fuji Electric Holdings Co Ltd | Bidirectional semiconductor device |
| CN102339850A (en) * | 2010-07-19 | 2012-02-01 | 中国人民解放军国防科学技术大学 | Octagonal latticed metal-oxide-semiconductor field-effect transistor (MOSFET) power tube layout structure |
| CN103872126A (en) * | 2012-12-18 | 2014-06-18 | 上海华虹宏力半导体制造有限公司 | Channel-type power MOSFET (metal-oxide-semiconductor field effect transistor) device |
| CN103943673A (en) * | 2014-05-04 | 2014-07-23 | 常州中明半导体技术有限公司 | Trench bipolar transistor provided with non-continuous trench |
| WO2017175460A1 (en) * | 2016-04-07 | 2017-10-12 | 三菱電機株式会社 | Semiconductor device and power conversion device |
| CN207601502U (en) * | 2017-12-22 | 2018-07-10 | 江苏宏微科技股份有限公司 | A kind of IGBT or MOSFET domain structures used for electric vehicle |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8809911B2 (en) * | 2010-11-30 | 2014-08-19 | Fuji Electric Co., Ltd. | Semiconductor device |
| JP6320808B2 (en) * | 2014-03-19 | 2018-05-09 | 富士電機株式会社 | Trench MOS semiconductor device |
-
2017
- 2017-12-22 CN CN201711408786.0A patent/CN107942615B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007134500A (en) * | 2005-11-10 | 2007-05-31 | Fuji Electric Holdings Co Ltd | Bidirectional semiconductor device |
| CN102339850A (en) * | 2010-07-19 | 2012-02-01 | 中国人民解放军国防科学技术大学 | Octagonal latticed metal-oxide-semiconductor field-effect transistor (MOSFET) power tube layout structure |
| CN103872126A (en) * | 2012-12-18 | 2014-06-18 | 上海华虹宏力半导体制造有限公司 | Channel-type power MOSFET (metal-oxide-semiconductor field effect transistor) device |
| CN103943673A (en) * | 2014-05-04 | 2014-07-23 | 常州中明半导体技术有限公司 | Trench bipolar transistor provided with non-continuous trench |
| WO2017175460A1 (en) * | 2016-04-07 | 2017-10-12 | 三菱電機株式会社 | Semiconductor device and power conversion device |
| CN207601502U (en) * | 2017-12-22 | 2018-07-10 | 江苏宏微科技股份有限公司 | A kind of IGBT or MOSFET domain structures used for electric vehicle |
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| CN107942615A (en) | 2018-04-20 |
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