CN207601502U - A kind of IGBT or MOSFET domain structures used for electric vehicle - Google Patents
A kind of IGBT or MOSFET domain structures used for electric vehicle Download PDFInfo
- Publication number
- CN207601502U CN207601502U CN201721818444.1U CN201721818444U CN207601502U CN 207601502 U CN207601502 U CN 207601502U CN 201721818444 U CN201721818444 U CN 201721818444U CN 207601502 U CN207601502 U CN 207601502U
- Authority
- CN
- China
- Prior art keywords
- groove
- igbt
- mosfet
- row
- spacing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000001413 cellular effect Effects 0.000 abstract description 10
- 238000013461 design Methods 0.000 abstract description 8
- 238000005549 size reduction Methods 0.000 abstract description 4
- 230000009467 reduction Effects 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
The utility model belongs to electric vehicle transistor arts more particularly to a kind of IGBT or MOSFET domain structures used for electric vehicle.It includes IGBT or MOSFET editions, several columns groove is arranged at intervals in IGBT the or MOSFET versions, the same row groove repeats to disconnect, the same row groove disconnects spacing 0.6um, the same row groove disconnects the intermediate setting emitter contact hole of spacing, spacing 0.2um between the emitter contact hole and the adjacent groove, the adjacent two row groove shifts to install and lateral connection, and the spacing between the adjacent two row groove is 0.2um.The utility model passes through groove and the layout design cellular size reduction of emitter contact hole, gully density increases, and so as to which current density greatly improves, the chip size of IGBT or MOSFET can greatly reduce, so as to cost reduction, while the surplus entirely designed also can more fully.
Description
Technical field
The utility model belong to electric vehicle transistor arts more particularly to a kind of IGBT used for electric vehicle or
MOSFET domain structures.
Background technology
With the fast development of the industries such as electric vehicle, to insulated gate bipolar shape transistor or MOS field
Effect transistor (hereinafter referred to as IGBT or MOSFET) proposes higher challenge, one of them is exactly to require power capacity continuous
Increase, this means that the unit current density of IGBT is as high as possible.To reach the purpose, a kind of effectively measure is by its core
Piece cellular size reduces again and again, and to improve its current density, some advanced technologies can be by IGBT cellular size reductions now
To 0.8um, current density can reach 380A/cm2.However cellular size continues to zoom out, and receives actual process ability, work
One of the limitation of skill design rule, wherein most critical is the technique ruler by IGBT emitter holes or MOSFET source hole in itself
Design rule limitation very little and its to trench grooves so that continuing to zoom out for IGBT or MOSFET cellular sizes becomes extremely to be stranded
It is difficult or even infeasible.
Utility model content
In view of the shortcomings of the prior art, the utility model provides one kind based on groove or composite trench, reduce
IGBT or MOSFET cellular sizes improve current density, IGBT the or MOSFET domain structures used for electric vehicle for reducing cost.
To achieve these goals, the utility model is to realize by the following technical solutions：
A kind of IGBT or MOSFET domain structures used for electric vehicle, including IGBT or MOSFET editions, the IGBT or
Several columns groove is arranged at intervals in MOSFET versions, the same row groove repeats to disconnect, and the same row groove disconnects spacing
0.6um, the same row groove disconnect the intermediate setting emitter contact hole of spacing, the emitter contact hole with it is adjacent described
Spacing between groove is 0.2um, and the adjacent two row groove shifts to install and lateral connection, between the adjacent two row groove
Spacing be 0.2um.
A kind of above-mentioned IGBT or MOSFET domain structures used for electric vehicle, the top and (n+1)th of the n-th row groove
The bottom end connection of the row groove, the top of the (n+1)th row groove connects the middle part of the n-th+2 row groove, described
The bottom end of the top of the groove of n-th+2 row groove described with the n-th+3 row is connect, the top connection of the n-th+3 row groove
The middle part of n-th+4 row groove, and so on form two dimension arrangement groove.
This kind design solves existing because IGBT emitter holes or MOSFET source hole process in itself and its arriving
The design rule limitation of trench grooves so that the continuing to zoom out of IGBT or MOSFET cellular sizes become it is extremely difficult not even
It is feasible.
A kind of above-mentioned IGBT or MOSFET domain structures used for electric vehicle, the trench length are more than 1.6um, and small
In 10um.The utility model is mainly used in field of transistors used for electric vehicle, it is not limited to this, further includes some other
IGBT or MOSFET are needed high current density, small size demand application field.
Advantageous effect：
The utility model is designed by the special connection of groove and contact hole, ensures the design for meeting prior art ability
Rule so that the cellular size reduction of IGBT or MOSFET, gully density increase, so as to which current density greatly improves, simultaneously
Rational groove disconnection density, which can ensure that the loss of its raceway groove reduces and opens uniformity as possible, not to be reduced, compared to wanting for similary electric current
It asks, the chip size of IGBT or MOSFET can greatly reduce, and so as to cost reduction, while the surplus entirely designed also can more fill
Point.
Description of the drawings
It is described in detail the utility model with reference to the accompanying drawings and detailed description；
Fig. 1 is the structure diagram of the utility model.
Specific embodiment
To be easy to understand technical means, creative features, achievable purpose and effectiveness of the utility model, below
With reference to specific embodiment, the utility model is expanded on further.
Embodiment
With reference to Fig. 1, the utility model includes IGBT or MOSFET versions 1, if being arranged at intervals in the IGBT or MOSFET versions 1
Dry row groove 2, the same row groove 2 repeat to disconnect, and the same row groove 2 disconnects spacing 0.6um, the same row groove
2 disconnect the intermediate setting emitter contact hole 3 of spacing, and the spacing between the emitter contact hole 3 and the adjacent groove 2 is
0.2um, the adjacent two row groove 2 shift to install simultaneously lateral connection, and the top of the n-th row groove 2 and (n+1)th arrange described
The bottom end connection of groove 2, the middle part of the n-th+2 row of top connection groove 2 of the (n+1)th row groove 2, described n-th+2
The bottom end of the top of the groove 2 of the row groove 2 described with the n-th+3 row is connect, the top connection n-th of the n-th+3 row groove 2
The middle part of+4 row grooves 2, and so on form two dimension arrangement groove.Spacing between the adjacent two row groove 2 are
0.2um.2 length of groove is more than 1.6um, and less than 10um.
The entire cellular size of the utility model can be contracted to 0.4um, it means that gully density doubles, entire electricity
Current density doubles.Same row groove is no longer continuous, and in repeating to disconnect, adjacent two row trench spacing 0.2um, contact hole is no longer
Between adjacent two row groove, but between same row disconnection groove, simultaneously switch off trench spacing and meet insertion contact
The wide 0.2um in hole, distance disconnect groove 0.2um up and down, i.e., it is 0.6um that same column groove, which disconnects spacing, to ensure that disconnecting groove also can
Gate electrode is connected, therefore the n-th row groove is connect with n+1 row channel laterals, entire layout design groove is become increasing from one-dimensional arrangement
Add lateral two dimension arrangement.Groove disconnects the density with being inserted into contact hole, because groove disconnects, i.e., the region will not form ditch
Road so groove disconnection is overstocked, can lose a part of raceway groove, dredged if groove disconnected, contact hole can be caused very few, entire device
Conducting is not very uniform, so generally disconnecting trench length is more than 1.6um, less than 10um.
The utility model is designed by the special connection of groove and contact hole, ensures the design for meeting prior art ability
Rule so that the cellular size reduction of IGBT or MOSFET, gully density increase, so as to which current density greatly improves, simultaneously
Rational groove disconnection density, which can ensure that the loss of its raceway groove reduces and opens uniformity as possible, not to be reduced, compared to wanting for similary electric current
It asks, the chip size of IGBT or MOSFET can greatly reduce, and so as to cost reduction, while the surplus entirely designed also can more fill
Point.
The basic principle of the utility model and main feature and the advantages of the utility model has been shown and described above.One's own profession
The technical staff of industry is it should be appreciated that the present utility model is not limited to the above embodiments, described in above embodiments and description
Only illustrate the principle of the utility model, on the premise of not departing from the spirit and scope of the utility model, the utility model is also
Various changes and modifications are had, these various changes and improvements fall within the scope of the claimed invention.The utility model
Claimed range is defined by the appending claims and its equivalent thereof.
Claims (3)
1. a kind of IGBT or MOSFET domain structures used for electric vehicle, it is characterised in that：It is described including IGBT or MOSFET editions
Several columns groove is arranged at intervals in IGBT or MOSFET versions, the same row groove repeats to disconnect, and the same row groove disconnects
Spacing 0.6um, the same row groove disconnect the intermediate setting emitter contact hole of spacing, the emitter contact hole with it is adjacent
Spacing between the groove is 0.2um, and the adjacent two row groove shifts to install and lateral connection, the adjacent two row groove
Between spacing be 0.2um.
2. a kind of IGBT or MOSFET domain structures used for electric vehicle according to claim 1, it is characterised in that：N-th row
The bottom end of the top of the groove groove described with the (n+1)th row is connect, the top connection n-th+2 of the (n+1)th row groove
The middle part of the groove is arranged, the top of the groove of n-th+2 row is connect with the bottom end of the groove described in the n-th+3 row, the n-th+3 row
The top of the groove connects the middle part of the n-th+4 row groove, and so on form two dimension arrangement groove.
3. a kind of IGBT or MOSFET domain structures used for electric vehicle according to claim 1, it is characterised in that：The ditch
Slot length is more than 1.6um, and less than 10um.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721818444.1U CN207601502U (en) | 2017-12-22 | 2017-12-22 | A kind of IGBT or MOSFET domain structures used for electric vehicle |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721818444.1U CN207601502U (en) | 2017-12-22 | 2017-12-22 | A kind of IGBT or MOSFET domain structures used for electric vehicle |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207601502U true CN207601502U (en) | 2018-07-10 |
Family
ID=62767660
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721818444.1U Expired - Fee Related CN207601502U (en) | 2017-12-22 | 2017-12-22 | A kind of IGBT or MOSFET domain structures used for electric vehicle |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207601502U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107942615A (en) * | 2017-12-22 | 2018-04-20 | 江苏宏微科技股份有限公司 | A kind of IGBT or MOSFET domain structures used for electric vehicle |
-
2017
- 2017-12-22 CN CN201721818444.1U patent/CN207601502U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107942615A (en) * | 2017-12-22 | 2018-04-20 | 江苏宏微科技股份有限公司 | A kind of IGBT or MOSFET domain structures used for electric vehicle |
| CN107942615B (en) * | 2017-12-22 | 2024-03-22 | 江苏宏微科技股份有限公司 | IGBT or MOSFET layout structure for electric automobile |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN203325912U (en) | High voltage device | |
| CN105633137B (en) | A kind of slot gate power MOSFET device | |
| CN102969358B (en) | A kind of horizontal high voltage power semiconductor device | |
| WO2007098317A3 (en) | Lateral power devices with self-biasing electrodes | |
| CN103715238A (en) | Transverse high-voltage component with ultra-low specific on-resistance | |
| JP2009016686A (en) | High frequency transistor | |
| CN103928527B (en) | A kind of junction termination structures of horizontal high voltage power semiconductor device | |
| CN102646701A (en) | Junction field-effect transistor (JFET) and producing method thereof | |
| CN207601502U (en) | A kind of IGBT or MOSFET domain structures used for electric vehicle | |
| CN101000911A (en) | Semiconductor device having IGBT and diode | |
| CN102723329A (en) | High-density submicro high-voltage binary-coded decimal (BCD) semiconductor device and manufacturing method thereof | |
| CN103489908A (en) | RC-IGBT capable of eliminating negative resistance effect | |
| CN101217160A (en) | High voltage MOS device | |
| CN107942615A (en) | A kind of IGBT or MOSFET domain structures used for electric vehicle | |
| CN103839982A (en) | Planar gate super-junction product gate layout structure | |
| CN203481244U (en) | Transverse high-pressure semiconductor device and multi-step field plate thereof | |
| CN112768528A (en) | Three-gate SiC transverse MOSFET power device | |
| CN202434526U (en) | High-voltage transverse diffusion metal-oxide semiconductor structure | |
| CN202373585U (en) | Transverse power MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) device structure adopting reduced surface field (RESURFE) technology | |
| CN206388707U (en) | Domain structure for taking into account IGBT short-circuit capacities and switching speed | |
| CN216563140U (en) | Semiconductor power device structure | |
| CN203895454U (en) | Radio frequency laterally diffused metal oxide semiconductor layout structure | |
| CN202145450U (en) | Insulated gate bipolar transistor | |
| CN209626227U (en) | A kind of trench field effect transistor | |
| CN102623496B (en) | Matrix type mos field effect transistor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180710 |