CN203481244U - Transverse high-pressure semiconductor device and multi-step field plate thereof - Google Patents
Transverse high-pressure semiconductor device and multi-step field plate thereof Download PDFInfo
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- CN203481244U CN203481244U CN201320598229.0U CN201320598229U CN203481244U CN 203481244 U CN203481244 U CN 203481244U CN 201320598229 U CN201320598229 U CN 201320598229U CN 203481244 U CN203481244 U CN 203481244U
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Abstract
The utility model provides a transverse high-pressure semiconductor device and a multi-step field plate thereof. The multi-step field plate includes a first part arranged on a gate oxide and a second part arranged on a field oxide, the multi-step field plate further includes at least one metal field plate, the at least one metal field plate is arranged on the second part, an insulation dielectric layer is arranged between the second part and the metal field plate adjacent to the second part and the second part and the metal field plate are connected via contact holes, and the distance between the end, which is close to a drain electrode, of the second part and the drain electrode is greater than the distance between the end, which is close to the drain electrode, of the first metal field plate and the drain electrode. An insulation dielectric layer is arranged between two adjacent metal field plates which are connected via contact holes, and the distance between the end, which is close to a drain electrode, of one metal field plate and the drain electrode is greater than the distance between the end, which is close to the drain electrode, of the other metal field plate arranged above the metal field plate and adjacent to the metal field plate and the drain electrode. According to the utility model, the breakdown voltage of the transverse high-pressure semiconductor device can be higher.
Description
Technical field
The utility model relates to semiconductor integrated circuit field, relates in particular to a kind of horizontal high-voltage semi-conductor device and multistage field plate thereof.
Background technology
Laterally high-voltage semi-conductor device is device conventional in power integrated circuit, specifically comprises lateral double diffusion metal oxide transistor (LDMOS), landscape insulation bar double-pole-type transistor (LIGBT), lateral isolation knot etc.Puncture voltage is one of main key parameter of horizontal high-voltage semi-conductor device, is not affecting under the prerequisite of this other parameter of device, and puncture voltage is the bigger the better.For improving the puncture voltage of horizontal high-voltage semi-conductor device, industry has a lot of ways, and one of them is exactly to adopt field plate to make the Electric Field Distribution on surface, drift region more even, thereby improves puncture voltage.
As shown in Figure 1, take LDMOS as example, and LDMOS comprises polysilicon field plate, substrate 101,102, drift region, tagma 103, source electrode 104, the first grid oxide layer 105 that is positioned at described source electrode 104 tops, field oxide 106, drain 107, be positioned at the second gate oxide layer 108 of described drain electrode 107 tops; Described polysilicon field plate comprises the First 11 being arranged in described first grid oxide layer 105 and is arranged at second 12 on described field oxide 106.Polysilicon gate extends to the polysilicon field plate that forms LDMOS on the field oxide above drift region, when high voltage is born in the drain electrode 107 of LDMOS, polysilicon field plate connects low-voltage, the voltage of polysilicon field plate is lower with respect to the voltage of drift region, polysilicon field plate produces repulsive interaction to the free electron on 103 surfaces, drift region of its below, make the Electric Field Distribution on 103 surfaces, drift region more even than there is no the LDMOS of field plate structure, also the corresponding drain breakdown voltage that improves LDMOS.
But the drain breakdown voltage of the horizontal high-voltage semi-conductor device of employing single-order field plate of the prior art is also needed raising badly, so just need to further make the Electric Field Distribution on surface, drift region of horizontal high-voltage semi-conductor device more even.
Utility model content
Main purpose of the present utility model is to provide a kind of horizontal high-voltage semi-conductor device and multistage field plate thereof, can be so that the Electric Field Distribution on surface, drift region be more even, thus make the puncture voltage of horizontal high-voltage semi-conductor device higher.
In order to achieve the above object, the utility model provides a kind of multistage field plate that is applied to horizontal high-voltage semi-conductor device, described horizontal high-voltage semi-conductor device comprises source electrode, is positioned at gate oxide, field oxide and the drain electrode of described source electrode top, described multistage field plate comprises polysilicon field plate, described polysilicon field plate comprises the First that is arranged on described gate oxide and is arranged at second on described field oxide, and described multistage field plate also comprises the first Metal field plate;
Described the first Metal field plate is arranged on second of described polysilicon field plate;
Between second of described polysilicon field plate and described the first Metal field plate, be provided with insulating medium layer and connect by the contact hole in this insulating medium layer;
One end of close described drain electrode of second of described polysilicon field plate and the distance of described drain electrode are greater than one end near drain electrode of described the first Metal field plate and the distance of described drain electrode.
During enforcement, one end of the close described drain electrode of second of described polysilicon field plate and one end of the close described source electrode of described the first Metal field plate partly overlap in the horizontal direction.
The utility model also provides a kind of multistage field plate that is applied to horizontal high-voltage semi-conductor device, described horizontal high-voltage semi-conductor device comprises source electrode, is positioned at gate oxide, field oxide and the drain electrode of described source electrode top, described multistage field plate comprises polysilicon field plate, and described polysilicon field plate comprises the First being arranged on described gate oxide and is arranged at second on described field oxide;
Described multistage field plate also comprises at least two Metal field plates;
Described at least two Metal field plates are set in turn on second of described polysilicon field plate;
Between second of described polysilicon field plate and the Metal field plate nearest with it, be provided with insulating medium layer and be connected by the contact hole in this insulating medium layer, between two adjacent Metal field plates, be provided with insulating medium layer and connect by the contact hole in this insulating medium layer;
One end of close described drain electrode of second of described polysilicon field plate and the distance of described drain electrode are greater than one end of close described drain electrode and the distance of described drain electrode of the Metal field plate nearest with second of this polysilicon field plate;
One end of the close described drain electrode of described Metal field plate and the distance of described drain electrode are greater than above this Metal field plate and one end of close described drain electrode of the Metal field plate adjacent with this Metal field plate and the distance of described drain electrode.
During enforcement, one end of the close described drain electrode of second of described polysilicon field plate and partly overlapping in the horizontal direction with one end of the close described source electrode of second of this polysilicon field plate nearest described Metal field plate;
One end of the close described drain electrode of described Metal field plate and above this Metal field plate and one end of the close described source electrode of the Metal field plate adjacent with this Metal field plate partly overlap in the horizontal direction.
The utility model also provides a kind of horizontal high-voltage semi-conductor device, comprises above-mentioned multistage field plate.
Compared with prior art, horizontal high-voltage semi-conductor device described in the utility model and multistage field plate thereof, except adopting polysilicon field plate, at least one deck Metal field plate is also set on this polysilicon field plate, between each adjacent field plate, be provided with insulating medium layer and connect by the contact hole being arranged in this insulating medium layer, and from the field plate arranging on lower gradually near drain electrode, therefore can be so that the Electric Field Distribution on surface, drift region be more even, thus make the puncture voltage of horizontal high-voltage semi-conductor device higher.
Accompanying drawing explanation
Fig. 1 is the structural representation that adopts the horizontal high-voltage semi-conductor device of existing single-order field plate;
Fig. 2 is the structural representation of having applied the horizontal high-voltage semi-conductor device of multistage field plate described in the utility model embodiment;
Fig. 3 is the structural representation of the horizontal high-voltage semi-conductor device of multistage field plate described in another embodiment of the utility model.
Embodiment
Fig. 2 is the structural representation of having applied the horizontal high-voltage semi-conductor device of multistage field plate described in the utility model embodiment.
As shown in Figure 2, this horizontal high-voltage semi-conductor device comprises substrate 201,202, drift region, tagma 203, source electrode 204, the first grid oxide layer 205 that is positioned at described source electrode 204 tops, field oxide 206, drains 207 and be positioned at the second gate oxide layer 208 of described drain electrode 207 tops;
Described multistage field plate comprises polysilicon field plate;
Described polysilicon field plate comprises the First 21 being arranged in described first grid oxide layer 205 and is arranged at second 22 on described field oxide 206;
Described multistage field plate also comprises the first Metal field plate 23;
Described the first Metal field plate 23 is arranged on second 22 of described polysilicon field plate;
Between second 22 of described polysilicon field plate and described the first Metal field plate 23, be provided with insulating medium layer 24 and connect by the contact hole 25 being arranged in this insulating medium layer 24;
One end of the close described drain electrode 207 of second 22 of described polysilicon field plate and the distance of described drain electrode 207 are greater than one end near drain electrode 207 of described the first Metal field plate 23 and the distance of described drain electrode 207, and the difference near one end of drain electrode 207 and the distance of described drain electrode 207 of one end of the close described drain electrode 207 of second 22 of described polysilicon field plate and the distance of described drain electrode 207 and described the first Metal field plate 23 is 1～10 micron.
The multistage field plate that is applied to horizontal high-voltage semi-conductor device described in this embodiment of the utility model, except having adopted polysilicon field plate, also increased layer of metal field plate, this Metal field plate is provided with insulating medium layer with described polysilicon field plate between second above field oxide and is connected by the contact hole in this insulating medium layer, therefore this Metal field plate is identical with the voltage of described polysilicon field plate, when high voltage is born in the drain electrode of horizontal high-voltage semi-conductor device, described polysilicon field plate is all connected low-voltage with this Metal field plate, therefore the voltage of described polysilicon field plate and this Metal field plate is lower with respect to the voltage of drift region, described polysilicon field plate and this Metal field plate all produce repulsive interaction to the free electron on the surface, drift region of below, and because this Metal field plate is compared with the more close drain electrode of described polysilicon field plate, and described in the Thickness Ratio of the insulating barrier of this Metal field plate below, the thickness of the insulating barrier of polysilicon field plate below is large, therefore this Metal field plate is less to the repulsive interaction of the free electron on surface, drift region than described polysilicon field plate to the repulsive interaction of the free electron on surface, drift region, thereby make the Electric Field Distribution on surface, drift region more even, laterally the puncture voltage of high-voltage semi-conductor device is higher.
In the specific implementation, in Fig. 2, one end of one end of the close described drain electrode 207 of second 22 of described polysilicon field plate and the close described source electrode 204 of described the first Metal field plate 23 partly overlaps in the horizontal direction, overlap length is 1～10 micron, so that second 22 of described polysilicon field plate is connected by being arranged in the contact hole of insulating medium layer 24 with described the first Metal field plate 23.
The horizontal high-voltage semi-conductor device that multistage field plate described in another embodiment of the utility model is applied to, comprises source electrode, is positioned at gate oxide, field oxide and the drain electrode of described source electrode top;
Described multistage field plate comprises polysilicon field plate, and described polysilicon field plate comprises the First being arranged on described gate oxide and is arranged at second on described field oxide;
Multistage field plate described in this embodiment of the utility model also comprises at least two Metal field plates;
Described at least two Metal field plates are set in turn on second of described polysilicon field plate;
Between second of described polysilicon field plate and the Metal field plate nearest with it, be provided with insulating medium layer and be connected by the contact hole in this insulating medium layer, between two adjacent Metal field plates, be provided with insulating medium layer and connect by the contact hole in this insulating medium layer;
One end of close described drain electrode of second of described polysilicon field plate and the distance of described drain electrode are greater than one end of close described drain electrode and the distance of described drain electrode of the Metal field plate nearest with second of this polysilicon field plate, one end of close described drain electrode of second of described polysilicon field plate and the distance of described drain electrode and with second of this polysilicon field plate nearest one end of close described drain electrode of Metal field plate and the difference of the distance of described drain electrode be 1～10 micron;
One end of the close described drain electrode of described Metal field plate and the distance of described drain electrode are greater than above this Metal field plate and one end of close described drain electrode of the Metal field plate adjacent with this Metal field plate and the distance of described drain electrode, one end of the close described drain electrode of described Metal field plate and the distance of described drain electrode and above this Metal field plate and one end of close described drain electrode of the Metal field plate adjacent with this Metal field plate and the difference of the distance of described drain electrode be 1～10 micron.
Multistage field plate described in this embodiment of the utility model, except having adopted polysilicon field plate, also increased multiple layer metal field plate, between this polysilicon field plate and this multiple layer metal field plate, interconnect, therefore this multiple layer metal field plate is identical with the voltage of described polysilicon field plate, when high voltage is born in the drain electrode of horizontal high-voltage semi-conductor device, described polysilicon field plate is all connected low-voltage with this multiple layer metal field plate, therefore the voltage of described polysilicon field plate and this multiple layer metal field plate is lower with respect to the voltage of drift region, described polysilicon field plate and this multiple layer metal field plate all produce repulsive interaction to the free electron on the surface, drift region of below, and the field plate that distance drain electrode is nearer, the thickness of the insulating barrier of its below is larger, field plate is also just less to the repulsive interaction of the free electron on surface, drift region, surface, drift region below ladder field plate has formed to drain directions the stepping distribution of free electron repulsive interaction, thereby make the Electric Field Distribution on surface, drift region more even, laterally the puncture voltage of high-voltage semi-conductor device is higher.
Concrete, in the multistage field plate described in this embodiment of the utility model, one end of the close described drain electrode of second of described polysilicon field plate and partly overlapping in the horizontal direction with one end of the close described source electrode of second of this polysilicon field plate nearest described Metal field plate, overlap length is 1～10 micron, so that the contact hole in the insulating medium layer between second of described polysilicon field plate and the Metal field plate that is adjacent by this polysilicon field plate second and this Metal field plate connects.
One end of the close described drain electrode of described Metal field plate and above this Metal field plate and one end of the close described source electrode of the Metal field plate adjacent with this Metal field plate partly overlap in the horizontal direction, overlap length is 1～10 micron, so that two adjacent Metal field plates connect by the contact hole in the insulating medium layer between this two Metal field plate.
Shown in Fig. 3, when the multistage field plate described in the utility model embodiment comprises double layer of metal field plate,
The horizontal high-voltage semi-conductor device that multistage field plate described in this embodiment is applied to comprises substrate 301,302, drift region, tagma 303, source electrode 304, the first grid oxide layer 305 that is positioned at described source electrode 304 tops, field oxide 306, drain 307 and be positioned at the second gate oxide layer 308 of described drain electrode 307 tops;
Described multistage field plate comprises polysilicon field plate;
Described polysilicon field plate comprises the First 31 being arranged in described first grid oxide layer 305 and is arranged at second 32 on described field oxide 306;
Described multistage field plate also comprises the first Metal field plate 33 and the second Metal field plate 34;
Described the first Metal field plate 33 and described the second Metal field plate 34 are set in turn on second 32 of described polysilicon field plate;
Between second 32 of described polysilicon field plate and the first Metal field plate 33, be provided with the first insulating medium layer 35 and connect by the first contact hole 351 in this first insulating medium layer 35;
Between described the first Metal field plate 33 and described the second Metal field plate 34, be provided with the second insulating medium layer 36 and connect by the second contact hole 361 in this second insulating medium layer 36;
One end of the close described drain electrode 307 of second 32 of described polysilicon field plate and the distance of described drain electrode 307 are greater than one end of close described drain electrode 307 and the distance of described drain electrode 307 of described the first Metal field plate 33, and one end of close described drain electrode 307 of one end of the close described drain electrode 307 of second 32 of described polysilicon field plate and the distance of described drain electrode 307 and described the first Metal field plate 33 and the difference of the distance of described drain electrode 307 are 1～10 micron;
One end of the close described drain electrode 307 of described the first Metal field plate 33 and the distance of described drain electrode 307 are greater than one end of close described drain electrode 307 and the distance of described drain electrode 307 of described the second Metal field plate 34, and one end of close described drain electrode 307 of one end of the close described drain electrode 307 of described the first Metal field plate 33 and the distance of described drain electrode 307 and described the second Metal field plate 34 and the difference of the distance of described drain electrode 307 are 1～10 micron;
One end of one end of the close described drain electrode 307 of second 32 of described polysilicon field plate and the close described source electrode 304 of described the first Metal field plate 33 partly overlaps in the horizontal direction, and overlap length is 1～10 micron;
One end of the close described source electrode 304 of one end of the close described drain electrode 307 of described the first Metal field plate 33 and described the second Metal field plate 34 partly overlaps in the horizontal direction, and overlap length is 1～10 micron.
The utility model also provides a kind of horizontal high-voltage semi-conductor device, comprises above-mentioned multistage field plate.
Horizontal high-voltage semi-conductor device described in the utility model embodiment and multistage field plate thereof, can be so that laterally the Electric Field Distribution on the surface, drift region of high-voltage semi-conductor device be more even, thereby improve the puncture voltage of horizontal high-voltage semi-conductor device, and in technique, be very easy to realize, not needing increases processing step or takes special process.
The above is preferred implementation of the present utility model; should be understood that; for those skilled in the art; do not departing under the prerequisite of principle described in the utility model; can also make some improvements and modifications, these improvements and modifications also should be considered as protection range of the present utility model.
Claims (5)
1. a multistage field plate that is applied to horizontal high-voltage semi-conductor device, described horizontal high-voltage semi-conductor device comprises source electrode, is positioned at gate oxide, field oxide and the drain electrode of described source electrode top, described multistage field plate comprises polysilicon field plate, described polysilicon field plate comprises the First being arranged on described gate oxide and is arranged at second on described field oxide, it is characterized in that, described multistage field plate also comprises the first Metal field plate;
Described the first Metal field plate is arranged on second of described polysilicon field plate;
Between second of described polysilicon field plate and described the first Metal field plate, be provided with insulating medium layer and connect by the contact hole in this insulating medium layer;
One end of close described drain electrode of second of described polysilicon field plate and the distance of described drain electrode are greater than one end near drain electrode of described the first Metal field plate and the distance of described drain electrode.
2. the multistage field plate that is applied to horizontal high-voltage semi-conductor device as claimed in claim 1, it is characterized in that, one end of the close described drain electrode of second of described polysilicon field plate and one end of the close described source electrode of described the first Metal field plate partly overlap in the horizontal direction.
3. a multistage field plate that is applied to horizontal high-voltage semi-conductor device, described horizontal high-voltage semi-conductor device comprises source electrode, is positioned at gate oxide, field oxide and the drain electrode of described source electrode top, described multistage field plate comprises polysilicon field plate, described polysilicon field plate comprises the First being arranged on described gate oxide and is arranged at second on described field oxide, it is characterized in that
Described multistage field plate also comprises at least two Metal field plates;
Described at least two Metal field plates are set in turn on second of described polysilicon field plate;
Between second of described polysilicon field plate and the Metal field plate nearest with it, be provided with insulating medium layer and be connected by the contact hole in this insulating medium layer, between two adjacent Metal field plates, be provided with insulating medium layer and connect by the contact hole in this insulating medium layer;
One end of close described drain electrode of second of described polysilicon field plate and the distance of described drain electrode are greater than one end of close described drain electrode and the distance of described drain electrode of the Metal field plate nearest with second of this polysilicon field plate;
One end of the close described drain electrode of described Metal field plate and the distance of described drain electrode are greater than above this Metal field plate and one end of close described drain electrode of the Metal field plate adjacent with this Metal field plate and the distance of described drain electrode.
4. the multistage field plate that is applied to horizontal high-voltage semi-conductor device as claimed in claim 3, is characterized in that,
One end of the close described drain electrode of second of described polysilicon field plate and partly overlapping in the horizontal direction with one end of the close described source electrode of second of this polysilicon field plate nearest described Metal field plate;
One end of the close described drain electrode of described Metal field plate and above this Metal field plate and one end of the close described source electrode of the Metal field plate adjacent with this Metal field plate partly overlap in the horizontal direction.
5. a horizontal high-voltage semi-conductor device, is characterized in that, comprises the multistage field plate as described in arbitrary claim in claim 1 to 4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320598229.0U CN203481244U (en) | 2013-09-26 | 2013-09-26 | Transverse high-pressure semiconductor device and multi-step field plate thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320598229.0U CN203481244U (en) | 2013-09-26 | 2013-09-26 | Transverse high-pressure semiconductor device and multi-step field plate thereof |
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| Publication Number | Publication Date |
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| CN203481244U true CN203481244U (en) | 2014-03-12 |
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| CN201320598229.0U Expired - Lifetime CN203481244U (en) | 2013-09-26 | 2013-09-26 | Transverse high-pressure semiconductor device and multi-step field plate thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112271210A (en) * | 2020-10-22 | 2021-01-26 | 吉林华微电子股份有限公司 | Semiconductor power and manufacturing method thereof |
| CN112786685A (en) * | 2021-02-08 | 2021-05-11 | 成都芯源系统有限公司 | Transverse double-diffusion transistor with multi-stage field plate and manufacturing method thereof |
-
2013
- 2013-09-26 CN CN201320598229.0U patent/CN203481244U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112271210A (en) * | 2020-10-22 | 2021-01-26 | 吉林华微电子股份有限公司 | Semiconductor power and manufacturing method thereof |
| CN112786685A (en) * | 2021-02-08 | 2021-05-11 | 成都芯源系统有限公司 | Transverse double-diffusion transistor with multi-stage field plate and manufacturing method thereof |
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Effective date of registration: 20220727 Address after: 518116 founder Microelectronics Industrial Park, No. 5, Baolong seventh Road, Baolong Industrial City, Longgang District, Shenzhen, Guangdong Province Patentee after: SHENZHEN FOUNDER MICROELECTRONICS Co.,Ltd. Address before: 100871 room 808, founder building, Zhongguancun, 298 Chengfu Road, Haidian District, Beijing Patentee before: PEKING UNIVERSITY FOUNDER GROUP Co.,Ltd. Patentee before: SHENZHEN FOUNDER MICROELECTRONICS Co.,Ltd. |
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