CN107851614A - 垂直功率器件内的表面器件 - Google Patents

垂直功率器件内的表面器件 Download PDF

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Publication number
CN107851614A
CN107851614A CN201680024714.3A CN201680024714A CN107851614A CN 107851614 A CN107851614 A CN 107851614A CN 201680024714 A CN201680024714 A CN 201680024714A CN 107851614 A CN107851614 A CN 107851614A
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CN
China
Prior art keywords
semiconductor devices
transistor
region
vertical power
power device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201680024714.3A
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English (en)
Chinese (zh)
Inventor
T.E.哈林顿三世
Z.屈
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D3 Semiconductor LLC
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D3 Semiconductor LLC
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Filing date
Publication date
Application filed by D3 Semiconductor LLC filed Critical D3 Semiconductor LLC
Publication of CN107851614A publication Critical patent/CN107851614A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H10D62/111—Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/411—PN diodes having planar bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/856—Complementary IGFETs, e.g. CMOS the complementary IGFETs having different architectures than each other, e.g. high-voltage and low-voltage CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
CN201680024714.3A 2015-02-27 2016-02-26 垂直功率器件内的表面器件 Pending CN107851614A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201562126240P 2015-02-27 2015-02-27
US62/126240 2015-02-27
PCT/US2016/019917 WO2016138468A1 (en) 2015-02-27 2016-02-26 Surface devices within a vertical power device

Publications (1)

Publication Number Publication Date
CN107851614A true CN107851614A (zh) 2018-03-27

Family

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CN201680024714.3A Pending CN107851614A (zh) 2015-02-27 2016-02-26 垂直功率器件内的表面器件

Country Status (6)

Country Link
US (2) US9755058B2 (https=)
EP (1) EP3262678A4 (https=)
JP (1) JP2018511168A (https=)
KR (1) KR20170121224A (https=)
CN (1) CN107851614A (https=)
WO (1) WO2016138468A1 (https=)

Cited By (1)

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CN115939215A (zh) * 2022-12-16 2023-04-07 广微集成技术（深圳）有限公司 一种vdmos器件

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US10580884B2 (en) * 2017-03-08 2020-03-03 D3 Semiconductor LLC Super junction MOS bipolar transistor having drain gaps
CN111989778B (zh) * 2018-04-20 2024-02-13 艾鲍尔半导体 小间距超结mosfet结构和方法
US11764209B2 (en) * 2020-10-19 2023-09-19 MW RF Semiconductors, LLC Power semiconductor device with forced carrier extraction and method of manufacture
CN112560328B (zh) * 2020-11-18 2022-04-19 电子科技大学 基于表面微应变信号的igbt键合引线故障诊断方法
TWI826190B (zh) * 2022-12-16 2023-12-11 力晶積成電子製造股份有限公司 高頻電晶體

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US20030136990A1 (en) * 2002-01-23 2003-07-24 Ludwig Rossmeier Integrated circuit configuration having a structure for reducing a minority charge carrier current
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US20060211189A1 (en) * 2005-02-28 2006-09-21 Infineon Technologies Austria Ag Method for producing a buried semiconductor layer
CN101431076A (zh) * 2007-11-06 2009-05-13 株式会社电装 半导体设备及其制造方法
CN102201445A (zh) * 2011-04-14 2011-09-28 中北大学 一种psoi横向超结功率半导体器件
CN103367447A (zh) * 2012-03-26 2013-10-23 英飞凌科技奥地利有限公司 具有超级结晶体管和另外的器件的半导体装置
CN103582936A (zh) * 2011-06-09 2014-02-12 丰田自动车株式会社 半导体装置以及半导体装置的制造方法
US20150035005A1 (en) * 2010-12-23 2015-02-05 Anup Bhalla Monolithic igbt and diode structure for quasi-resonant converters

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US6072215A (en) * 1998-03-25 2000-06-06 Kabushiki Kaisha Toyota Chuo Kenkyusho Semiconductor device including lateral MOS element
EP1047133A1 (en) * 1999-04-23 2000-10-25 STMicroelectronics S.r.l. Method for producing devices for control circuits integrated in power devices
US20030136990A1 (en) * 2002-01-23 2003-07-24 Ludwig Rossmeier Integrated circuit configuration having a structure for reducing a minority charge carrier current
CN1494160A (zh) * 2002-09-25 2004-05-05 ��ʽ���綫֥ 功率半导体元件
US20060211189A1 (en) * 2005-02-28 2006-09-21 Infineon Technologies Austria Ag Method for producing a buried semiconductor layer
CN101431076A (zh) * 2007-11-06 2009-05-13 株式会社电装 半导体设备及其制造方法
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CN103582936A (zh) * 2011-06-09 2014-02-12 丰田自动车株式会社 半导体装置以及半导体装置的制造方法
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Publication number Priority date Publication date Assignee Title
CN115939215A (zh) * 2022-12-16 2023-04-07 广微集成技术（深圳）有限公司 一种vdmos器件

Also Published As

Publication number Publication date
WO2016138468A1 (en) 2016-09-01
EP3262678A4 (en) 2019-01-09
KR20170121224A (ko) 2017-11-01
EP3262678A1 (en) 2018-01-03
US20160254373A1 (en) 2016-09-01
US10074735B2 (en) 2018-09-11
JP2018511168A (ja) 2018-04-19
US20180012981A1 (en) 2018-01-11
US9755058B2 (en) 2017-09-05

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Application publication date: 20180327