CN107845687B - 薄膜晶体管及其制备方法、电子设备 - Google Patents

薄膜晶体管及其制备方法、电子设备 Download PDF

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CN107845687B
CN107845687B CN201711021725.9A CN201711021725A CN107845687B CN 107845687 B CN107845687 B CN 107845687B CN 201711021725 A CN201711021725 A CN 201711021725A CN 107845687 B CN107845687 B CN 107845687B
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graphene
thin film
film transistor
electrode
layer
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CN107845687A (zh
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李广耀
袁广才
王东方
汪军
王庆贺
刘宁
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BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
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BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
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Abstract

本发明涉及薄膜晶体管及其制备方法、电子设备，该薄膜晶体管包括衬底及设置在衬底上的有源层，所述有源层由至少两层类石墨烯二维半导体材料制作而成。根据本发明的实施例的薄膜晶体管具有较高的电子迁移率，该TFT具有良好的电学性能。

Description

薄膜晶体管及其制备方法、电子设备
技术领域
本发明涉及半导体技术领域，尤其涉及薄膜晶体管及其制备方法、电子设备。
背景技术
薄膜晶体管作为一种功率半导体器件具有广泛应用，例如，可被应用在电视、平面显示器及投影设备等电子产品中，薄膜晶体管的电子迁移率是衡量其性能的重要指标，薄膜晶体管主要包括非晶硅薄膜晶体管、有机薄膜晶体管、低温多晶硅薄膜晶体管等，其中有机薄膜晶体管和低温多晶硅薄膜晶体管是在传统的非晶硅薄膜晶体管基础上进行改进，其具有更大的电子迁移速，因此，对于薄膜晶体管来说如何提高电子迁移是需要解决的问题。
发明内容
本发明提供薄膜晶体管及其制备方法、电子设备，以解决相关技术中的不足。
根据本发明实施例的第一方面，提供一种薄膜晶体管，包括：
有源层，所述有源层由至少两层类石墨烯二维半导体材料制作而成。
可选的，薄膜晶体管还包括衬底、栅极、栅绝缘层、源极和漏极；
所述栅极、所述栅绝缘层、所述源极、所述有源层和所述漏极依次层叠设置在所述衬底上。
可选的，薄膜晶体管还包括衬底、栅极、栅绝缘层、源极和漏极；
所述漏极、所述有源层、所述源极、所述栅绝缘层和所述栅极依次层叠设置在所述衬底上。
可选的，薄膜晶体管还包括衬底、栅极、栅绝缘层、源极和漏极；
所述栅极、所述栅绝缘层和所述有源层依次设置在所述衬底上；
所述源极和所述漏极位于同一层，且间隔设置在所述有源层上。
可选的，薄膜晶体管还包括栅极、栅绝缘层、源极和漏极；
所述有源层、所述栅绝缘层和所述栅极依次设置在所述衬底上；
所述源极和所述漏极位于同一层，且间隔设置于所述有源层和所述栅绝缘层之间。
可选的，所述类石墨烯二维半导体材料为类石墨烯二维二硫化钼或类石墨烯二维二硫化钨。
可选的，所述漏极为由横纵交叉的纳米银线组成的网格结构。
可选的，所述源极和/或所述栅极由石墨烯导体材料制作而成。
可选的，所述衬底为柔性衬底。
根据本发明实施例的第二方面，提供一种电子设备，所述电子设备包括上述任一种薄膜晶体管。
根据本发明实施例的第三方面，提供一种薄膜晶体管的制备方法，包括：
形成有源层，所述有源层至少包括两层类石墨烯二维半导体材料。
可选的，该制备方法还包括：
提供一衬底；
在所述衬底上形成栅极、栅绝缘层、源极和漏极；
所述形成有源层包括：
在所述衬底上形成所述有源层。
可选的，所述类石墨烯二维半导体材料为类石墨烯二维二硫化钼或类石墨烯二维二硫化钨。
可选的，采用纳米银溶液通过丝网印刷工艺形成所述漏极，且所述漏极为横纵交叉的纳米银线组成的网格结构。
可选的，采用石墨烯导体材料形成所述栅极和/或所述源极。
根据上述实施例可知，有源层包括至少两层类石墨烯二维半导体材料，由于有多层类石墨烯二维半导体材料，不仅每层材料本身可以形成载流子，并且，也可在层与层之间沿纵向箭头方向形成载流子，因此，具有较高的电子迁移率，使TFT具有良好的电学性能。
应当理解的是，以上的一般描述和后文的细节描述仅是示例性和解释性的，并不能限制本发明。
附图说明
此处的附图被并入说明书中并构成本说明书的一部分，示出了符合本发明的实施例，并与说明书一起用于解释本发明的原理。
图1是根据本发明一实施例示出的类石墨烯二维二硫化钼的原子结构示意图；
图2是根据本发明一实施例示出的薄膜晶体管的结构示意图；
图3是根据本发明另一实施例示出的薄膜晶体管的结构示意图；
图4是根据本发明又一实施例示出的薄膜晶体管的结构示意图；
图5是根据本发明又一实施例示出的薄膜晶体管的结构示意图。
具体实施方式
这里将详细地对示例性实施例进行说明，其示例表示在附图中。下面的描述涉及附图时，除非另有表示，不同附图中的相同数字表示相同或相似的要素。以下示例性实施例中所描述的实施方式并不代表与本发明相一致的所有实施方式。相反，它们仅是与如所附权利要求书中所详述的、本发明的一些方面相一致的装置和方法的例子。
本发明实施例提供一种薄膜晶体管TFT(Thin-film transistor，简称TFT)，包括有源层，有源层由至少两层类石墨烯二维半导体材料制作而成。
类石墨烯二维材料指在一个维度上维持一个或几个原子厚度的纳米尺度，而在二维平面内具有无限类似碳六元环组成的两维周期蜂窝状点阵结构，其具有独特的性质，例如，具有优异的导热导电性、高表面积比等性质。
类石墨烯二维半导体材料指具有类石墨烯二维材料特性且具有半导体性质的材料，具体而言，该类石墨烯二维半导体材料可以为，通过替代元素对应的原子替代石墨烯导体中的部分或者全部碳原子，使导带和价带重合的石墨烯的导带和价带分开且具有一定带隙，从而降低了石墨烯导体的导电率，具有半导体性质。
类石墨烯二维半导体材料具体可以为过渡族金属与硫族元素的化合物、第三(四)族主族金属硫化物、硅烯、锗烯等作为替代元素替代部分或者全部石墨烯导体中的碳原子，构成类石墨烯二维半导体材料。
在一些例子中，本实施例中的类石墨烯二维半导体材料例如为类石墨烯二维二硫化钼(MoS2)或类石墨烯二维二硫化钨(WS2)等。
图1所示为本发明实施例提供的包含三层类石墨烯二维二硫化钼的原子结构示意图，从图1中可以看出，通过硫(S)原子与钼(Mo)原子替代了石墨烯中的全部碳原子，但是硫原子与钼的排列方式与原来石墨烯中碳原子排列方式基本相同，图1所示只是其中一种类石墨烯二维材料的原子排列方式和结构，实际应用中，还可以有其他结构，本发明对此并不限定。
类石墨烯二维半导体材料因具有半导体性质可以用于制作本发明实施例的有源层；并且类石墨烯二维半导体材料和石墨烯材料类似，具有良好的稳定性、柔韧性和透明度，因此，可以使得本发明实施例的TFT适用于柔性电子设备，例如，可穿戴设备。
本发明实施例的TFT，有源层包括至少两层类石墨烯二维半导体材料，由于有多层类石墨烯二维半导体材料，不仅每层材料本身可以形成载流子，并且，层与层之间也可形成载流子，例如，图1所示的每层类石墨烯二维二硫化钼可在沿横向箭头方向形成载流子，也可在层与层之间沿纵向箭头方向形成载流子，因此，具有较高的电子迁移率，使TFT具有良好的电学性能。
需要说明的是，本发明实施例中的类石墨烯二维半导体材料的具体化学结构只用于解释本发明，而并不用于限制本发明，其它可以用于实现本发明技术方案的结构也在本发明的保护范围之内。
本发明实施例的TFT，可以由多种类型和结构，下面结合说明书附图对本发明实施例作进一步详细描述。
图2所示为其中一种结构的TFT，如图2所示，该TFT包括：
衬底10，衬底10上依次层叠设置有栅极11、栅绝缘层12、源极13、有源层14(图中有源层14包括三层类石墨烯二维半导体材料)和漏极15。
图3所示为另一种结构的TFT，如图3所示，该TFT包括：
衬底10，衬底10上依次层叠设置有漏极15、有源层14(图中有源层14包括三层类石墨烯二维半导体材料)、源极13、栅绝缘层12和栅极11。
图2和图3所示的TFT，为两种类型的垂直薄膜晶体管，其中，图2所示为栅极位于有源层下方的底栅型薄膜晶体管，图3所示为栅极位于有源层上方的顶栅型薄膜晶体管，该两种类型的TFT的各层层叠设置，有源层的厚度即为导电沟道的宽度，通过增加有源层的厚度可提高导电沟道的宽长比，具有较大的导通电流和较低的开启电压，因此，可降低采用该TFT的电子设备的功耗，尤其可应用于对功耗要求高的电子设备中，例如作为可穿戴设备、人工智能、仿生机器人等设备中的晶体管。并且，对于制备单个的TFT而言，只需要依次在衬底上形成各层的所需材料即可，不需要对源极和漏极层之间形成导电沟道的构图工艺，因此，可以节省TFT的制备成本。
图4所示为第三种结构的TFT，如图4所示，该TFT包括：
衬底10，衬底上依次设置有栅极11、栅绝缘层12和有源层14；并且，源极13和漏极15位于同一层，且间隔设置在有源层14上。
图5所示为第四种结构的TFT，如图5所示，该TFT包括：
衬底10，衬底上依次设置有有源层14、栅绝缘层12和栅极11；并且，源极13和漏极15位于同一层，且间隔设置在有源层14和栅绝缘层12之间。
图4和图5所示的TFT，为两种类型的传统薄膜晶体管，其中，图4所示为栅极位于有源层下方的底栅型薄膜晶体管，图5所示为栅极位于有源层上方的顶栅型薄膜晶体管，该两种类型的TFT，源极和漏极之间的间隔为导电沟道，该TFT为传统类型的薄膜晶体管，尤其使用于显示器中作为开关晶体管。
上述四种类型的TFT由于有源层包括多层类石墨烯二维半导体材料，具有对光和压力敏感的特性，当其受到外界光照或者压力时，每层的载流子浓度和每层之间载流子的浓度会发生变化，因此，可通过在栅极施加电压，检测源极和漏极之间的电流大小检测施加在该TFT上的压力或者外界光照的强度，可作为光学或力学传感器件；并且，由于有多层类石墨烯二维半导体材料，当受到不同外界光照强度不同或者压力不同时，每层的载流子浓度和每层之间载流子的浓度变化可以累加，因此，源极和漏极之间的电流变化差异大，通过比较每层中以及层与层之间由于外界光照或者压力等变化引起载流子迁移率变化而产生的电流变化的差值，可以更准确的检测外界光照和压力的变化，将其作为光学或力学传感器件时，具有良好的灵敏度。
需要说明的是，上述实施例中，由多层类石墨烯二维半导体材料组成的有源层，每层的材料可以相同，例如，有源层中每层均为类石墨烯二维二硫化钼(MoS2)或类石墨烯二维二硫化钨(WS2)等；或者有源层中每层材料均不相同，例如，其中一层为类石墨烯二维二硫化钼(MoS2)，另一层为类石墨烯二维二硫化钨(WS2)，再一层为其他的类石墨烯二维半导体材料，或者有源层中每相邻两层之间的材料不同，例如，有源层包括由类石墨烯二维二硫化钼(MoS2)和类石墨烯二维二硫化钨(WS2)间隔设置的多层。
对于上述各种层结构不同的有源层，由于材料不同，每层之间或者层与层之间形成的载流子数量和类型会不同，因此，对于包括不同有源层的TFT而言，其电子迁移率也会不同，在应用中，可以根据不同的需要具体选择有源层中每层的具体材料，本发明对此并不限制。
在一种可选的实施方式中，漏极为由横纵交叉的纳米银线组成的网格结构。
本实施例中，漏极采用纳米银材料制作，其电阻率低，导电性能良好，且具有优异的透光性、耐曲挠性等特点，作为TFT的漏极材料，可使该TFT适用于柔性设备中，例如，可穿戴设备、曲面或者可弯折的显示装置等电子设备中。漏极采用纳米银材料可通过丝网印刷方式制备，制备工艺简单，且不需要高温工艺，适用于在柔性衬底上制备，并且该漏极为网格结构，在制备过程中，通过控制纳米银线的厚度和网格中各条线之间的距离大小可获得不同电阻率的漏极结构，在其他结构相同时，源极和漏极之间的电流可以不同，可获得不同灵敏度和功耗的TFT，进一步扩大TFT的应用范围。
在一些例子中，源极和/或栅极由石墨烯导体材料制作而成。
石墨烯导体材料为超薄材料，漏极和栅极采用石墨烯导体材料可以大大降低TFT器件的整体厚度，减小TFT器件尺寸，可制备出超薄TFT和纳米尺寸的TFT器件，该TFT器件可应用于具有超薄、轻质、低功耗、柔性要求的可穿戴设备、光学检测器及人工智能设备等领域。因此，使该TFT符合可穿戴设备、人工智能设备和仿生机器人等对器件尺寸要求高的电子设备中。
并且，由于源极采用石墨烯导体材料，当在TFT的栅极施加电压时，石墨烯导体材料中会有少量电子进入有源层，因此，可以进一步的提高载流子的浓度，提高TFT的电子迁移率。
在一些例子中，上述TFT的衬底可采用柔性衬底，例如，塑料或者树脂等材作为柔性衬底的材料，具体而言，例如为PDMS(polydimethylsiloxane，聚二甲基硅氧烷，简称PDMS)等。
采用柔性衬底使该TFT适用于可穿戴设备、人工智能设备、曲面或者可弯折显示设备等电子设备中。
本发明实施例还提供一种电子设备，所述电子设备包括上述任一实施例所述的薄膜晶体管。
本发明实施例的电子设备可以为各种类型的设备，该电子设备可以为电子纸、手机、平板电脑、电视机、笔记本电脑、数码相框、导航仪等具有显示功能的产品或部件，该电子设备也可以为光学或者力学传感器，或者是需要光学或者力学传感器的电子设备中，例如，车载电子设备、仿生机器人、人工智能设备等。
本发明实施例还提供一种薄膜晶体管的制备方法，该方法包括：形成有源层，该有源层至少包括两层类石墨烯二维半导体材料。
本实施例中，衬底可以为柔性衬底(例如，PDMS材料的衬底)或者硬质衬底(例如，玻璃材料的衬底)，可通过化学气相淀积法(Chemical Vapor Deposition，简称CVD)或者等离子体增强化学的气相沉积法(Plasma Enhanced Chemical Vapor Deposition，简称PECVD)或者快速热化学气相沉积法(Rapid Thermal CVD，简称RTCVD)等多种方法在衬底上形成至少两层类石墨烯二维半导体材料，如果需要在衬底的特定区域制备一个或多个TFT，可通过构图工艺(具体可以包括但不限于光刻胶涂敷、曝光、显影、刻蚀、光刻胶剥离等工艺)工艺对形成的多层两层类石墨烯二维半导体进行构图，以形成TFT的有源层。
上述的类石墨烯二维半导体材料例如可以为类石墨烯二维二硫化钼或类石墨烯二维二硫化钨等。
本实施例的TFT，由于其有源层包括多层类石墨烯二维半导体材料，不仅每层材料本身可以形成载流子，并且，层与层之间也可形成载流子，因此，具有较高的电子迁移率，使TFT具有良好的电学性能。
在一些例子中，TFT还包括栅极、栅绝缘层、源极和漏极，TFT还可以包括衬底，衬底作为上述各层的承接载体，因此，进一步的该制备方法还包括：
提供一衬底；
在衬底上形成栅极、栅绝缘层、源极和漏极；
所述形成有源层包括：在衬底上形成该有源层。
本发明实施例的TFT，可以由多种类型和结构，上述图2-图5中已经介绍四种不同类型TFT的具体结构，对于每种结构的TFT制备而言，可采用已有工艺制备，此处依次说明。
对于制备图2和图3所示的垂直薄膜晶体管而言，由于TFT为各层层叠的结构，依次在衬底上形成各材料层即可形成TFT的结构，例如，若制备底栅TFT，依次在衬底上形成栅极材料层、栅绝缘层材料层、源极材料层、有源层材料层和漏极材料层即可形成TFT结构。
如果需要在衬底的特定区域制备一个或多个TFT，在形成各材料层后，可通过一次构图工艺对各材料层进行构图，以在特定区域形成TFT的结构，具体而言，在位于最上层的材料层上形成光刻胶，然后通过掩膜版对光刻胶进行曝光和显影，形成所需的光刻胶图案，光刻胶图案包括光刻胶保留区和光刻胶去除区域，光刻胶保留区域对应需要TFT的区域，光刻胶去除区域对应其他区域，然后对光刻胶去除区域对应的各材料层进行刻蚀，刻蚀掉各材料层，最后剥离光刻胶保留区域的光刻胶，最终在特定区域形成一个或多个TFT结构。
由上述制备方法可知，只需要通过一次构图工艺即可在特定区域形成TFT结构，制备方法简单，可以节省TFT的制备成本。
对于制备图4和图5所示的传统薄膜晶体管而言，可通过多次构图工艺形成TFT的各层结构，下面以制备图4所示的底栅TFT为例说明。
首先，在衬底上形成栅极材料层，然后通过曝光、显影和刻蚀等构图工艺对栅极材料层进行构图，形成栅极；
其次，在栅极上形成栅绝缘层材料层，对于该层而言不需要进行构图；
再次，在栅绝缘层上形成至少两层类石墨烯二维半导体材料层，然后通过曝光、显影和刻蚀等构图工艺对该多层材料层进行构图，形成有源层；
最后，在有源层上形成源极和漏极材料层，源极和漏极可采用相同材料，然后再次通过曝光、显影和刻蚀等构图工艺对源极和漏极材料层进行构图，形成源极和漏极。
通过上述描述可知，可通过三次构图工艺形成TFT的结构，如果形成图5所示的顶栅TFT，可参照上述各步骤形成，只是形成各层的顺序与上述底栅TFT不同，在此不再赘述。
在一个可选的实施方式中，可采用纳米银溶液通过丝网印刷工艺形成漏极，且漏极为横纵交叉的纳米银线组成的网格结构。
本实施例中，采用丝网印刷工艺形成漏极，可采用丝网印版通过一定的压力使纳米银溶液通过丝网印版上的网孔，从而在衬底上形成网格结构的漏极，丝网印刷工艺制备方法简单，制备成本低，并且不需要经过高温工艺，因此，尤其适用于在柔性衬底上制备。并且该漏极为网格结构，在制备过程中，通过控制纳米银线的厚度和网格中各条线之间的距离大小可获得不同电阻率的漏极结构。
在一些例子中，采用石墨烯导体材料形成栅极和/或源极。
本实施例中，采用石墨烯导体材料形成栅极和漏极，对于在衬底上形成石墨烯导体材料而言，具体可采用机械剥离法、氧化还原法、外延生长法或者化学气相沉淀法等多种方法形成。
由于石墨烯导体材料为超薄材料，漏极和栅极采用石墨烯导体材料可以大大降低TFT器件的整体厚度，减小TFT器件尺寸，可制备出超薄TFT和纳米尺寸的TFT器件，因此，使该TFT符合可穿戴设备、人工智能设备和仿生机器人等对器件尺寸要求高的电子设备中。
需要说明的是，上述形成栅极、源极和漏极材料也可以选择其他导体材料，例如，金属材料或或者金属合金材料等，上述形成栅绝缘层的材料也可以有多种，例如，三氧化二铝(Al2O3)或者氮化硅(SiN)等，本发明对此并不限定。
需要指出的是，在附图中，为了图示的清晰可能夸大了层和区域的尺寸。而且可以理解，当元件或层被称为在另一元件或层“上”时，它可以直接在其他元件上，或者可以存在中间的层。另外，可以理解，当元件或层被称为在另一元件或层“下”时，它可以直接在其他元件下，或者可以存在一个以上的中间的层或元件。另外，还可以理解，当层或元件被称为在两层或两个元件“之间”时，它可以为两层或两个元件之间唯一的层，或还可以存在一个以上的中间层或元件。通篇相似的参考标记指示相似的元件。
本领域技术人员在考虑说明书及实践这里公开的公开后，将容易想到本发明的其它实施方案。本发明旨在涵盖本发明的任何变型、用途或者适应性变化，这些变型、用途或者适应性变化遵循本发明的一般性原理并包括本发明未公开的本技术领域中的公知常识或惯用技术手段。说明书和实施例仅被视为示例性的，本发明的真正范围和精神由权利要求指出。

Claims (12)

1.一种作为光学或者力学传感器的薄膜晶体管，其特征在于，包括：衬底、栅极、栅绝缘层、源极、漏极和有源层，所述有源层由至少两层类石墨烯二维半导体材料制作而成；所述漏极为由横纵交叉的纳米银线组成的网格结构。
2.根据权利要求1所述的作为光学或者力学传感器的薄膜晶体管，其特征在于，所述栅极、所述栅绝缘层、所述源极、所述有源层和所述漏极依次层叠设置在所述衬底上。
3.根据权利要求1所述的作为光学或者力学传感器的薄膜晶体管，其特征在于，所述漏极、所述有源层、所述源极、所述栅绝缘层和所述栅极依次层叠设置在所述衬底上。
4.根据权利要求1所述的作为光学或者力学传感器的薄膜晶体管，其特征在于，所述栅极、所述栅绝缘层和所述有源层依次设置在所述衬底上；
所述源极和所述漏极位于同一层，且间隔设置在所述有源层上。
5.根据权利要求1所述的作为光学或者力学传感器的薄膜晶体管，其特征在于，所述有源层、所述栅绝缘层和所述栅极依次设置在所述衬底上；
所述源极和所述漏极位于同一层，且间隔设置于所述有源层和所述栅绝缘层之间。
6.根据权利要求1-5任一项所述的作为光学或者力学传感器的薄膜晶体管，其特征在于，所述类石墨烯二维半导体材料为类石墨烯二维二硫化钼或类石墨烯二维二硫化钨。
7.根据权利要求2-5任一项所述的作为光学或者力学传感器的薄膜晶体管，其特征在于，所述源极和/或所述栅极由石墨烯导体材料制作而成。
8.根据权利要求2-5任一项所述的作为光学或者力学传感器的薄膜晶体管，其特征在于，所述衬底为柔性衬底。
9.一种电子设备，其特征在于，所述电子设备包括权利要求1-8任一项所述的作为光学或者力学传感器的薄膜晶体管。
10.一种作为光学或者力学传感器的薄膜晶体管的制备方法，其特征在于，
提供一衬底；
在所述衬底上形成栅极、栅绝缘层、源极和漏极有源层，所述有源层至少包括两层类石墨烯二维半导体材料；采用纳米银溶液通过丝网印刷工艺形成所述漏极，且所述漏极为横纵交叉的纳米银线组成的网格结构。
11.根据权利要求10所述的薄膜晶体管，其特征在于，所述类石墨烯二维半导体材料为类石墨烯二维二硫化钼或类石墨烯二维二硫化钨。
12.根据权利要求10的方法，其特征在于，采用石墨烯导体材料形成所述栅极和/或所述源极。
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