CN107845615B - 功率模块及其制造方法 - Google Patents
功率模块及其制造方法 Download PDFInfo
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- CN107845615B CN107845615B CN201710842728.2A CN201710842728A CN107845615B CN 107845615 B CN107845615 B CN 107845615B CN 201710842728 A CN201710842728 A CN 201710842728A CN 107845615 B CN107845615 B CN 107845615B
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Abstract
本发明公开一种功率模块,其包括:衬底;功率转换芯片,其被设置在衬底的一个表面上;以及辐射构件,其接合至衬底的另一表面。辐射构件具有被配置成与衬底的另一表面接触的接触表面,并且包括在接触表面内以便熔合到衬底的另一表面的熔融区域。
Description
技术领域
本公开总体涉及一种功率模块(power module)及其制造方法,并且更特别地,涉及一种具有针对可以更有效地散发在功率转换芯片中产生的热的辐射构件(radiationmember)的接合结构的功率模块及其制造方法。
背景技术
诸如逆变器的功率转换装置是用于包括混合动力车辆和电动车辆的环保型车辆的核心部件中的一个。作为功率转换装置的部件并且占功率转换装置的大部分成本的功率模块是环保型车辆的另一核心部件。
功率模块的现代化开发集中于降低成本和提高冷却性能。就冷却性能来说,开发集中于双面冷却、单面冷却和高效冷却器形状,并且已经主要执行接合技术(bondingtechnology)。当功率模块的冷却性能提高时,目前使用的功率半导体装置的额定电流可以降低,并且芯片尺寸可以减小。因此,可以降低芯片成本并使功率模块的操作稳定。
传统的功率模块冷却技术包括经由焊接将用作散热器的基板接合至衬底以及其中使用热界面材料(TIM)(例如,导热膏脂(thermal grease))使冷却构件与衬底接触的结构。问题在于当焊接时,基板容易弯曲。因此,基板的厚度可以减小的程度有限,这限制热辐射的提高。另外,因为TIM的热阻相对较大,在大约1至6W/mK的范围内,因此使用TIM提高整个功率模块的热阻,这不可能实现有效的热辐射。
本部分公开的事项仅仅是为了增强对本公开的总体背景技术的理解,并且不应被认为这样的事项形成本领域技术人员已知的现有技术。
发明内容
因此,鉴于以上问题已经作出本公开,并且本公开的目的是提供一种具有针对可以更有效地散发在功率转换芯片中产生的热的辐射构件的接合结构的功率模块及其制造方法。
根据本公开的实施例,功率模块包括:衬底;功率转换芯片,其被设置在衬底的一个表面上;以及辐射构件,其被接合至衬底的另一表面,其中辐射构件具有被配置成与衬底的另一表面接触的接触表面,并且包括在接触表面内以便熔合到衬底的另一表面的熔融区域。
衬底可以包括介电层和分别形成在介电层的相对表面上的第一金属层和第二金属层,功率转换芯片可以被设置在第一金属层的一个表面上,并且辐射构件可以被接合至第二金属层的一个表面。
熔融区域可以具有网格图案。
辐射构件可以包括形成接触表面的基板,并且辐射翅片以预定图案形成在与接触表面相对的基板的表面上。
熔融区域可以形成在其中不形成辐射翅片的接触表面的区域中。
此外,根据本公开的实施例,一种功率模块的制造方法包括:将功率转换芯片附接至衬底的一个表面;将辐射构件接合至衬底的另一表面;以及通过将激光束辐射至与衬底的另一表面接触的辐射构件的接触表面相对的辐射构件的表面的区域来将辐射构件熔合到衬底的另一表面。
衬底可以包括介电层和分别形成在介电层的相对表面上的第一金属层和第二金属层,将功率转换芯片附接至衬底的表面可以包括将功率转换芯片附接至第一金属层的一个表面,并且将辐射构件熔合到衬底的另一表面可以包括将辐射构件熔合到第二金属层的一个表面。
激光束辐射至其的区域可以具有网格图案。
辐射构件可以包括具有与衬底接触的接触表面的基板,并且辐射翅片可以以预定图案形成在与接触表面相对的基板的表面上。
将辐射构件熔合至衬底的另一表面可以包括通过在辐射翅片之间辐射激光束来将辐射构件熔合至衬底的另一表面。
方法可以进一步包括控制激光束的强度、在其上方辐射激光束的表面积、或者根据辐射构件的位置和辐射构件的热分布而辐射激光束的持续时间。
附图说明
从结合附图的以下详细描述中,本公开的上述和其它目标、特征及其它优点将更加清楚地理解,其中:
图1是示出根据本公开的实施例的功率模块的截面图;
图2是用于解释根据本公开的实施例的功率模块的熔融区域的局部平面图;
图3是根据本公开的实施例的功率模块的熔融区域的截面的放大电子显微照片;
图4是用于使用传统冷却方法的功率模块的性能与根据本公开的实施例的功率模块的性能之间的比较的图表;
图5是示出根据本公开的实施例的实验性示例的实验设备的简图;
图6是示出根据本公开的实施例的实验性示例中应用的芯片温度和电阻之间的相关性的图表;
图7是示出根据本公开的实施例的实验性示例的间接冷却和直接冷却之间的差异的简图;
图8是示出根据本公开的实施例的实验性示例中应用的激光接合的方式的简图;
图9是示出根据本公开的实施例的实验性示例中应用的各种针翅(pin-fin)结构的简图;
图10是示出根据本公开的实施例的关于实验性示例中应用的针翅结构的实验结果的图表;
图11是示出根据本发明的实施例的实验性示例的分析结果的简图;
图12是示出当应用LES时根据本公开的实施例的实验性示例的分析结果的图;
图13是示出根据本公开的实施例的关于实验性示例中应用的接合过程的实验结果的图表;
图14是示出当应用激光接合时根据本公开的实施例的实验性示例的分析结果的简图;以及
图15是示出根据本公开的实施例的实验性示例的针翅部分的附接的表面区域的简图。
应当理解的是,上述参考附图不一定按比例绘制,其呈现说明本公开的基本原理的各种优选的特征的稍微简化的表示。包括例如具体尺寸、方位、位置和形状的本公开的具体设计特征将部分地由特定的预期应用和使用环境来确定。
具体实施方式
现在将参照附图详细地描述本公开的实施例。如本领域技术人员将认识到的,在不脱离本公开的精神或范围的情况下,描述的实施例可以以各种不同的方式修改。此外,在整个说明书中,相同的附图标记表示相同的元件。
本文使用的术语仅用于描述特定实施例的目的,并不旨在限制本公开。如本文使用的,单数形式“一”、“一个”和“该”也旨在包括复数形式,除非上下文另有明确指示。将进一步理解的是,当在本说明书中使用时,术语“包括”和/或“包含”指定所述特征、整体、步骤、操作、元件、和/或部件的存在,但是不排除一个或多个其它特征、整体、步骤、操作、元件、部件、和/或其组的存在或添加。如本文使用的,术语“和/或”包括一个或多个相关所列项目的任意和所有组合。
在下文中,将参照附图描述根据本公开的各种实施例的功率模块及其制造方法。
图1是示出根据本公开的实施例的功率模块的截面图。
如图1所示,根据本公开的实施例的功率模块可以包括衬底10和20、功率转换芯片30以及辐射构件100和200。
特别地,图1所示的示例具有双面冷却结构,其中两个衬底10和20分别被设置在功率转换芯片30的相对的上侧和下侧,辐射构件100被设置在下部衬底10的下表面上,并且辐射构件200被设置在上部衬底20的上表面上。另外,功率转换芯片30的下表面可以经由焊料S接合至下部衬底10,并且功率转换芯片30的上表面可以经由间隔部40接合至上部衬底20的下表面。此处,功率转换芯片30的上表面可以经由焊料S接合至间隔部40。
衬底10和20用作在功率转换芯片30的上侧和下侧上形成双面冷却结构的基材,其中,功率转换芯片30被插入衬底10和20之间。在本公开的实施例中,衬底10和20可以是例如活性金属钎焊(AMB)衬底、直接敷铜(DBC)衬底或直接敷铝(DBA)衬底。
通过将金属层12、13、22和23接合至具有介电部件(例如,陶瓷或纤维增强塑料(FRP))的介电层11和21的相对表面来制造这些衬底10和20,即,AMB衬底、DBC衬底或DBA衬底。金属层12和22可以用作实施与功率转换芯片30电连接的电极,并且金属层13和23可以用作实施与辐射构件100和200的接触的元件。
功率转换芯片30可以是被设置在衬底10和20之间以产生用于功率转换的电气流的电气装置,并且可以经由例如半导体工艺来制造。例如,功率转换芯片30可以包括作为开关装置的金属氧化物半导体场效应晶体管(MOSFET)或绝缘栅双极晶体管(IGBT),或者连接到开关装置的二极管。因为芯片以非常快的周期进行切换,所以这种功率转换芯片30产生大量的热,因此电流的流动被频繁地中断。
功率转换芯片30可以在其上侧和下侧处设有用于电连接的端子。在图1的示例中,位于功率转换芯片30的下侧处的端子(未示出)可以连接至下部衬底10的上部金属层12,并且位于功率转换芯片30的上侧处的端子可以经由例如导线连接到例如单独的引线,虽然这未被示出。
虽然图1中的示例示出双面接合结构,其中衬底10和20分别被设置在功率转换芯片30的相对侧处并且辐射构件100和200被设置在衬底10和20的外表面上,但是本公开的另一示例可以包括其中衬底仅被设置在功率转换芯片30的一侧上的单面冷却结构。
辐射构件100和200用于将功率转换芯片30中产生的热散发到功率模块的外部。这些辐射构件100和200可以使用具有优异导热性的金属(例如,Ag、Cu、Au、Al、Mg、W或其合金)来制造。辐射构件100和200可以分别包括形成用于衬底10和20的金属层13和23的接触表面的基板110和210以及从基板110和210突出的多个辐射翅片120和220。
在本公开的各种实施例中,辐射构件100和200使用激光焊接方法接合至衬底10和20的金属层13和23。因此,辐射构件100和200以及衬底的金属层13和23经由金属熔合接合至彼此,并且在激光束310辐射至其的区域上形成熔融区域L。
虽然图1描述激光发射装置300从上部辐射构件200的上侧辐射激光束310,但是可以从下部辐射构件100的下侧辐射激光束,由此下部辐射构件100和下部衬底10的金属层13也可以接合至彼此。
图2是用于解释根据本公开的实施例的功率模块的熔融区域的局部平面图。即,图2是示出下部辐射构件100的下表面或上部辐射构件200的上表面的平面图。
如图2所示,为了形成辐射构件100和200与衬底的金属层13和23之间的接合,激光束辐射至其的激光束辐射区域L可以被形成为具有预定的网格图案。即,为了辐射构件100和200与衬底的金属层13和23之间的接合,激光束可以根据预定的网格图案被辐射至辐射构件100和200的基板110和210。
特别地,在本公开的实施例中,辐射翅片120和220可以形成为在基板110和210上具有预定布置图案。在该情况下,激光束可以被辐射到基板110和210上没有形成辐射翅片120和220的区域,由此激光束辐射区域L可以获得预定的网格图案。
图3是根据本公开的实施例的功率模块的熔融区域的截面的放大电子显微照片。
如图3所示,可以确定的是,当激光束被辐射到辐射翅片120和220之间的基板110和210上的区域时,其中基板110和210被熔化的区域A形成在激光束辐射至其的区域上方,并且基板110和220在熔化区域A上正方形成熔合到基板的金属层的区域L。
在图3中,辐射构件100和200的构成材料是铝(Al),并且衬底的金属层的材料是铜(Cu)。
图4是用于使用传统冷却方法的功率模块的性能与根据本公开的实施例的功率模块的性能之间的比较的简图。
在图4中,附图标记“P1”表示当应用在衬底10和20与辐射构件100和200之间以紧密接触的方式添加导热膏脂的传统方法时测量的热阻,附图标记“P2”至“P4”表示当应用焊接衬底10和20与辐射构件100和200之间的整个接触表面的传统方法时测量的热阻,并且附图标记“V1”和“V2”表示根据本公开的实施例当激光束被辐射到衬底10和20与辐射构件100和200之间的接触表面的区域以形成熔融区域时测量的热阻。另外,在图4中,纵轴表示热阻,其单位为“K/W”,横轴表示冷却水的流量,其单位为“L/min”。
如图4所示,根据本公开的实施例的经由激光焊接形成衬底10和20与辐射构件100和200之间的接合的结构比使用导热膏脂实现接触的传统技术表现出低得多的热阻(低至其一半),并且特别地,表现出与经由焊接接合整个接触表面的技术的热阻水平几乎相等的热阻水平。
因此,根据本公开的各种实施例的功率模块可以在不焊接衬底与辐射构件之间的整个接合表面的情况下实现足够的热阻,并且因此可以消除由于在焊接时引起的辐射构件的基板弯曲而导致的平整度管理方面的困难。由此,基板的厚度可以减小,这实现较高的热辐射。
另外,由于衬底和辐射构件之间的接合通过激光束辐射被简单地实施,因此根据本公开的各种实施例的功率模块可以在短时间内实施直接接合,并且即使在不使用诸如例如焊料或膏脂的单独的接合材料或者形成热界面所需的材料的情况下,也可以实现高质量的热辐射。
同时,本公开的实施例还提供一种上述功率模块的制造方法。
再次参照图1,根据本公开的实施例的功率模块的制造方法可以包括:将功率转换芯片30附接至各个衬底10和20的一个表面;设置辐射构件100和200以便与各个衬底10和20的另一表面接触;以及通过将激光束310辐射到辐射构件100和200与衬底10和20的接触表面相对的表面的区域来将辐射构件100和200熔合到各自衬底10和20的另一表面。
如上所述,在熔合步骤中,激光束可以被辐射以在辐射构件100和200的基板110和210上具有网状图案。特别地,当辐射翅片120和220以预定图案被布置在各自基板110和210与其接触表面相对的表面上时,在熔合步骤中,激光束可以被辐射到基板110和210上对应于多个散热翅片120和220之间的间隙的区域,以将辐射构件100和200熔合到各自衬底10和20的另一表面。
特别地,在本公开的实施例中,在辐射激光束用于激光焊接的工艺中,激光束的辐射密度可以被调节成确定基板110和210上不同区域中的不同焊接密度。即,当在具有图2所示图案的激光束辐射区域L上辐射激光束时,可以增加激光束的强度、在其上方辐射激光束的表面积或辐射激光束的持续时间,以便在具有高热分布的区域(例如,功率转换芯片30正上方或正下方的区域)中实现高焊接密度。另外,可以减少激光束的强度、在其上方辐射激光束的表面积或辐射激光束的持续时间,以便在具有低热分布的区域(例如,基板110和210的外周边区域)中实现低焊接密度。
通过焊接密度的这种变化,本公开的实施例可以减轻由彼此熔合的基板110和210与衬底10和20的金属层13和23之间的热膨胀系数之差引起的热应力,并且可以确保有效工艺的实施。
从以上描述显而易见的是,根据功率模块及其制造方法,可以在不焊接衬底和辐射构件之间的整个接合表面的情况下实现足够的热阻。由此,可以防止在焊接时引起的辐射构件的基板弯曲,这实现基板的厚度减小。
另外,根据功率模块及其制造方法,可以在短时间内经由激光束辐射简单地实施衬底和辐射构件之间的直接接合,并且即使在不使用诸如例如焊料或膏脂的单独的接合材料或者形成热界面所需的材料的情况下,也可以实现高质量的热辐射。
在下文中,将描述根据本公开的各种实施例的更详细的实验性示例。
为了评估冷却性能,通过使用图5所示的实验设备来研究从芯片温度到冷却水的总热阻和从进口到出口的压力损失。
热阻可以如下获得:
Q:热量[kW],R:热阻[K/kW],Tj:芯片温度[K],Tf:冷却水温度[K]。
通过使用图6所示的温度和电阻之间的相关性间接地获得芯片温度。
压力损失可以如下获得:
ΔP=Pin-Pout (2)
Pin:进口压力[kPa],Pout:出口压力[kPa]。
实验条件如下表1所示。
【表1】
流量[L/min] | 1.5、2.0、2.5、3.0、3.7 |
冷却水的温度[℃] | 25 |
热量[W] | 100 |
热通量[W/cm2] | 100 |
针翅的几何形状 | 正方形、圆形、菱形 |
接合过程 | 焊料、膏脂、激光* |
*激光被划分成3种类型(高激光功率、中激光功率、低激光功率)。
在该实验中,已经通过使用芯片加热器完成单元测试。考虑到实际功率装置和冷却系统的值,确定流量和热通量的值。关于接合过程,与传统的膏脂接合作为间接接合相比,焊接接合和激光接合作为直接冷却被研究。
间接冷却和直接冷却之间的差异如图7所示。
从图7可以看出,直接冷却可以通过去除热阻高的膏脂来降低总热阻。已经陈述直接冷却可以减少大约30%的热阻。虽然提出关于直接接合(主要为焊接接合)的若干研究,但是关于激光接合的研究几乎没有。在本实验中,除膏脂接合和焊料接合之外,实验研究在易于制造方面优越的激光接合。
图8示出激光接合的方式。激光从针翅侧辐射。圆形针翅和正方形针翅的尺度被确定为使得激光辐射面积相同。
三种类型的针翅的实际图像以及每个针翅的详细规格分别在图9和表2中示出。
【表2】
几何形状 | 正方形 | 圆形 | 菱形 |
针翅的数量 | 55 | 55 | 52 |
侧边的长度/直径[mm] | 1.6 | Φ1.6 | 1.5 |
高度[mm] | 5 | 5 | 5 |
布置 | 交错 | 交错 | 交错 |
表面积[mm2] | 1795 | 1409 | 1468 |
图10示出针翅结构的实验结果。
随流量的增加而增长的线表示压力损失,并且随流量的增加而减小的线表示热阻。已经发现,尽管菱形针翅的表面积小于正方形针翅的表面积,但是菱形针翅的热阻最小。对流热阻被表示为:
h:传热系数[W/(mm·K)],A:辐射表面积[mm2]。
另外,h可以被表示为:
Tw:表面温度[K],Tf:冷却水的温度[K],k:导热率[W(mm·K)],δT:热边界层厚度[mm]。
因此,可以预期的是与壁表面平行的流动速度的增加使得δT变薄,导致传热系数增加。然而,这些结果与分析结果不同。图11、表3分别示出IC芯片的分析结果和最大温度。
【表3】
圆形 | 正方形 | 菱形 | |
模拟 | 54.27 | 61.70 | 58.48 |
实验 | 42.62 | 45.09 | 41.15 |
从这些结果可以看出,实验结果和分析结果也相当不相似。为了提高模拟的精度,通过改变针翅周围的网格尺寸并且将湍流模型从RANS改变为LES,已经再次完成模拟。图12、表4分别示出当应用LES时的分析结果以及与RANS比较的表。
【表4】
从这些结果,确认的是,可以通过将湍流模型从RANS改变为LES来执行高精度模拟。由于这两种类型的湍流模型的主要区别在于LES可以考虑可以围绕针翅产生的相对较大的涡流,发现需要更多关于改变针翅几何形状时的涡流的研究。
图13示出关于接合过程的结果。
使用焊料接合时的热阻是使用膏脂时的热阻的两小(在3.7[L/min]处为0.157[K/W])。此外,还发现,激光接合能够将热辐射性能提高到与焊料接合的几乎相同。该结果也可以从模拟中获得。图14和表5分别示出激光接合的分析结果。并且,图15示出针翅部分的附接的表面区域。从图15可以看出,并不是全部表面区域都附接到针翅部分。只有激光辐射区域被附接,并且可以传输从IC芯片产生的热。假设不辐射激光的区域是绝热的。
【表5】
接合过程 | IC芯片的平均温度[℃] |
焊料接合 | 54.27 |
激光接合 | 54.62 |
虽然上面已经参照附图描述本公开的实施例,本领域技术人员将理解的是,在不改变本公开的技术思想或特征的情况下,本公开可以在各种其它实施例中实施。
Claims (9)
1.一种功率模块,其包括:
衬底;
功率转换芯片,其被设置在所述衬底的一个表面上;以及
辐射构件,其接合至所述衬底的另一表面,
其中所述辐射构件具有被配置成与所述衬底的另一表面接触的接触表面,并且包括在所述接触表面内以便熔合到所述衬底的另一表面的熔融区域,
其中所述熔融区域具有网格图案。
2.根据权利要求1所述的功率模块,其中:
所述衬底包括介电层和分别形成在所述介电层的相对表面上的第一金属层和第二金属层,
所述功率转换芯片被设置在所述第一金属层的一个表面上,以及
所述辐射构件接合至所述第二金属层的一个表面。
3.根据权利要求1所述的功率模块,其中:
所述辐射构件包括形成所述接触表面的基板,以及
辐射翅片以预定图案形成在与所述接触表面相对的所述基板的表面上。
4.根据权利要求3所述的功率模块,其中所述熔融区域形成在其中不形成辐射翅片的所述接触表面的区域中。
5.一种功率模块的制造方法,其包括:
将功率转换芯片附接至衬底的一个表面;
将辐射构件接合至所述衬底的另一表面;以及
通过将激光束辐射到与所述衬底的另一表面接触的所述辐射构件的接触表面相对的所述辐射构件的表面的区域来将所述辐射构件熔合到所述衬底的另一表面,
其中所述激光束被辐射到的区域具有网格图案。
6.根据权利要求5所述的方法,其中:
所述衬底包括介电层和分别形成在所述介电层的相对表面上的第一金属层和第二金属层,
将所述功率转换芯片附接至所述衬底的表面包括将所述功率转换芯片附接至所述第一金属层的一个表面,以及
将所述辐射构件熔合到所述衬底的另一表面包括将所述辐射构件熔合到所述第二金属层的一个表面。
7.根据权利要求5所述的方法,其中:
所述辐射构件包括具有与所述衬底接触的接触表面的基板,以及
辐射翅片以预定图案形成在与所述接触表面相对的所述基板的表面上。
8.根据权利要求7所述的方法,其中将所述辐射构件熔合到所述衬底的另一表面包括通过在所述辐射翅片之间辐射所述激光束来将所述辐射构件熔合到所述衬底的另一表面。
9.根据权利要求5所述的方法,其进一步包括控制所述激光束的强度、在其上方辐射所述激光束的表面积,或者根据所述辐射构件的位置和所述辐射构件的热分布而辐射所述激光束的持续时间。
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