CN107833930A - 一种制备金刚线切割的多晶电池片的方法 - Google Patents
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Abstract
本发明公开了一种制备金刚线切割的多晶电池片的方法,包括以下步骤:S1、多晶硅片的常规表面清洗、晒干;S2、使用多晶添加剂和氢氧化钠的碱性混合溶液对处理后的多晶硅片进行腐蚀处理;S3、使用氢氟酸和硝酸银的混合溶液在多晶硅片表面反应形成一层银颗粒;S4、使用氢氟酸和双氧水的混合溶液在多晶硅片表面反应形成微纳米结构的黑绒面;S5、使用氢氟酸和硝酸的酸性混合溶液在处理后的多晶硅片表面反应形成600‑700nm蜂窝状的凹凸结构;S6、使用氨水和双氧水的混合溶液处理完成的多晶硅片表面,去除银离子;S7、去离子水清洗并风干。本方案具有制备步骤较少,能大规模生产的同时生产成本较低、生产周期较短等优点。
Description
技术领域
本发明涉及电池板技术领域,具体为一种制备金刚线切割的多晶电池片的方法。
背景技术
随着全球经济的发展,能源的消耗急剧增长,绝大多数能源是化石燃料,不仅资源日渐减少,而且大量二氧化碳等气体排放,使环境问题日益严重。长期以来,多晶太阳电池表面反射率较高的难题一直得不到有效解决,制约了电池效率的进一步提升。传统技术中产出的多晶电池片生产成本极高、产出的电池片折射率较高,不利于如今在产能需求日益提升的时候进行大规模生产,而小规模生产的工艺水平较低,并不能达到大部分市场的需求。
发明内容
本发明的目的在于提供一种制备金刚线切割的多晶电池片的方法,以解决上述背景技术中提出的问题。
为实现上述目的,本发明提供如下技术方案:一种制备金刚线切割的多晶电池片的方法,依次包括以下步骤:
S1、多晶硅片的常规表面清洗、晒干;
S2、使用多晶添加剂和氢氧化钠的碱性混合溶液对处理后的多晶硅片进行腐蚀处理;
S3、使用氢氟酸和硝酸银的混合溶液在多晶硅片表面反应形成一层银颗粒;
S4、使用氢氟酸和双氧水的混合溶液在多晶硅片表面反应形成微纳米结构的黑绒面;
S5、使用氢氟酸和硝酸的酸性混合溶液在处理后的多晶硅片表面反应形成600-700nm蜂窝状的凹凸结构;
S6、使用氨水和双氧水的混合溶液处理完成的多晶硅片表面,去除银离子;
S7、去离子水清洗并风干处理完成的多晶硅片表面。
优选的,步骤S2中多晶添加剂和氢氧化钠的碱性混合溶液中固态氢氧化钠为10%g/L,多晶添加剂体积浓度为1-1.5%,步骤S2的反应处理时间为25-30min,反应温度为80-85℃,减薄量为0.25-0.3g。
优选的,步骤S4中微纳米结构的黑绒面绒面反射率为5%-6%。
与现有技术相比,本发明的有益效果是:本发明采用特定浓度的碱溶液在特点时间、温度等制备条件下制备出多晶电池片,此过程的制备步骤较少,能大规模生产的同时生产成本较低、生产周期较短,在保证多晶硅片的使用性能的情况下生产效率较高,与此同时,产出的多晶电池片折射率较低,能满足市面上对电池片折射率的要求,相较于传统技术中步骤繁多成本较高的制备方法,本发明的步骤较少、生产速度更快、成本控制更为简单。
附图说明
图1为一种制备金刚线切割的多晶电池片的方法的流程图。
具体实施方式
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
请参阅图1,本发明提供一种技术方案:一种制备金刚线切割的多晶电池片的方法,依次包括以下步骤:
S1、多晶硅片的常规表面清洗、晒干;
S2、使用多晶添加剂和氢氧化钠的碱性混合溶液对处理后的多晶硅片进行腐蚀处理;
S3、使用氢氟酸和硝酸银的混合溶液在多晶硅片表面反应形成一层银颗粒;
S4、使用氢氟酸和双氧水的混合溶液在多晶硅片表面反应形成微纳米结构的黑绒面;
S5、使用氢氟酸和硝酸的酸性混合溶液在处理后的多晶硅片表面反应形成600-700nm蜂窝状的凹凸结构;
S6、使用氨水和双氧水的混合溶液处理完成的多晶硅片表面,去除银离子;
S7、去离子水清洗并风干处理完成的多晶硅片表面。
在本发明的一个较佳实施例中,步骤S2中多晶添加剂和氢氧化钠的碱性混合溶液中固态氢氧化钠为10%g/L,多晶添加剂体积浓度为1-1.5%,步骤S2的反应处理时间为25-30min,反应温度为80-85℃,减薄量为0.25-0.3g,步骤S4中微纳米结构的黑绒面绒面反射率为5%-6%。。
在经步骤S1-S7进行制绒处理后,多晶电池片再依次经过洗涤银颗粒、扩散、边缘刻蚀、镀减反射膜、印刷烧结等步骤制得最终的多晶电池片,扩散、边缘刻蚀、镀减反射膜、印刷烧结等步骤同现有技术中对多晶硅电池片的制备工艺,以上步骤将多晶电池片自身的反射率和扩散、钝化等工序完美结合,最终产出符合生产目的的折射率较低的多晶电池片。
在本发明的S2步骤的碱粗抛工序去除了多晶硅片表面的损伤层和污垢,减弱了损伤层和污垢对后续加工处理中与多晶硅片进行接触反应的处理溶液对多晶硅片表面的影响,使得最终生产出的多晶电池片表面平整且次品率低,S3步骤利用银或者银离子的系统能量远低于硅的价带边缘,银离子从硅的价带中得到电子,从而被还原,最终在该步骤中银颗粒在硅片表面实现占位,步骤S4在氢氟酸和双氧水的体系下,银颗粒边缘的硅被交替氧化腐蚀,银颗粒下沉,从而实现硅片表呈现结构不规整的全黑形貌,在此过程中银离子起到了一个辅助挖孔的作用,步骤S5利用氢氟酸和硝酸的混合溶液的酸腐蚀性在多晶硅片表面形成蜂窝状的凹凸不平的绒面,从而完成制绒,步骤S6使用氨水和双氧水去除银离子,减少被反应出的银离子以及残留在多晶硅片表面的银离子对多晶硅片制备的影响,从整体上完成多晶电池片的制备。
本发明的整体工艺相对传统技术中的电池片制备工艺更为简单,生产速度较快,生产效率也较高,较为常规的技术路线也更适用于技术推广,相较与现有技术中的生产工艺,制备步骤的减少和工艺的简化也使得多晶电池片对生产工艺水平的要求降低,减少市场垄断,生产的多晶电池片相较于传统技术中的使用寿命较高,使用安全性更高,在保证使用性能的同时降低整体生产成本,企业经济效益较高,迎合大部分市场需求。
尽管已经示出和描述了本发明的实施例,对于本领域的普通技术人员而言,可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例进行多种变化、修改、替换和变型,本发明的范围由所附权利要求及其等同物限定。
Claims (3)
1.一种制备金刚线切割的多晶电池片的方法,其特征在于,依次包括以下步骤:
S1、多晶硅片的常规表面清洗、晒干;
S2、使用多晶添加剂和氢氧化钠的碱性混合溶液对处理后的多晶硅片进行腐蚀处理;
S3、使用氢氟酸和硝酸银的混合溶液在多晶硅片表面反应形成一层银颗粒;
S4、使用氢氟酸和双氧水的混合溶液在多晶硅片表面反应形成微纳米结构的黑绒面;
S5、使用氢氟酸和硝酸的酸性混合溶液在处理后的多晶硅片表面反应形成600-700nm蜂窝状的凹凸结构;
S6、使用氨水和双氧水的混合溶液处理完成的多晶硅片表面,去除银离子;
S7、去离子水清洗并风干处理完成的多晶硅片表面。
2.根据权利要求1所述的一种制备金刚线切割的多晶电池片的方法,其特征在于:步骤S2中多晶添加剂和氢氧化钠的碱性混合溶液中固态氢氧化钠为10%g/L,多晶添加剂体积浓度为1-1.5%,步骤S2的反应处理时间为25-30min,反应温度为80-85℃,减薄量为0.25-0.3g。
3.根据权利要求1所述的一种制备金刚线切割的多晶电池片的方法,其特征在于:步骤S4中微纳米结构的黑绒面绒面反射率为5%-6%。
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CN104576830A (zh) * | 2014-12-30 | 2015-04-29 | 江西赛维Ldk太阳能高科技有限公司 | 一种金刚线切割多晶硅片的制绒预处理液、制绒预处理方法和制绒预处理硅片及其应用 |
CN105576080A (zh) * | 2016-01-29 | 2016-05-11 | 江西赛维Ldk太阳能高科技有限公司 | 一种金刚线切割多晶硅片的单面制绒方法及单面制绒的金刚线切割多晶硅片 |
CN106098840A (zh) * | 2016-06-17 | 2016-11-09 | 湖洲三峰能源科技有限公司 | 一种湿法黑硅制备方法 |
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CN108963031A (zh) * | 2018-06-25 | 2018-12-07 | 东方日升新能源股份有限公司 | 一种解决金刚线湿法刻蚀黑硅电池片el不良的方法 |
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