CN107808888B - 一种cmos图像传感器的封装工艺 - Google Patents
一种cmos图像传感器的封装工艺 Download PDFInfo
- Publication number
- CN107808888B CN107808888B CN201711016619.1A CN201711016619A CN107808888B CN 107808888 B CN107808888 B CN 107808888B CN 201711016619 A CN201711016619 A CN 201711016619A CN 107808888 B CN107808888 B CN 107808888B
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- Prior art keywords
- image sensor
- cmos image
- pcb
- packaging
- glue
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- 238000012858 packaging process Methods 0.000 title claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 239000003292 glue Substances 0.000 claims abstract description 35
- 238000005520 cutting process Methods 0.000 claims abstract description 10
- 238000004140 cleaning Methods 0.000 claims abstract description 5
- 239000011521 glass Substances 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 2
- 238000004806 packaging method and process Methods 0.000 abstract description 25
- 238000000034 method Methods 0.000 abstract description 18
- 230000008569 process Effects 0.000 abstract description 17
- 238000000576 coating method Methods 0.000 abstract description 9
- 239000011248 coating agent Substances 0.000 abstract description 6
- 238000010586 diagram Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000004026 adhesive bonding Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201711016619.1A CN107808888B (zh) | 2017-10-25 | 2017-10-25 | 一种cmos图像传感器的封装工艺 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201711016619.1A CN107808888B (zh) | 2017-10-25 | 2017-10-25 | 一种cmos图像传感器的封装工艺 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107808888A CN107808888A (zh) | 2018-03-16 |
CN107808888B true CN107808888B (zh) | 2020-12-01 |
Family
ID=61591184
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201711016619.1A Active CN107808888B (zh) | 2017-10-25 | 2017-10-25 | 一种cmos图像传感器的封装工艺 |
Country Status (1)
Country | Link |
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CN (1) | CN107808888B (zh) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1571129A (zh) * | 2004-05-05 | 2005-01-26 | 王鸿仁 | 影像感测组件半导体晶圆级封装的方法 |
CN1905144A (zh) * | 2005-05-27 | 2007-01-31 | 阿瓦戈科技通用Ip(新加坡)股份有限公司 | 用于封装图像传感器的方法和封装的图像传感器 |
CN101950751A (zh) * | 2009-07-10 | 2011-01-19 | 菱光科技股份有限公司 | 图像传感器及其封装方法 |
CN103064209A (zh) * | 2013-01-30 | 2013-04-24 | 京东方科技集团股份有限公司 | 一种液晶显示面板制备方法 |
CN104167380A (zh) * | 2014-05-30 | 2014-11-26 | 上海芯哲微电子科技有限公司 | 一种smt贴片封装结构的smt贴片封装方法 |
CN105405777A (zh) * | 2015-12-24 | 2016-03-16 | 上海源模微电子有限公司 | 一种大面积平行堆栈式封装结构和封装方法 |
-
2017
- 2017-10-25 CN CN201711016619.1A patent/CN107808888B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1571129A (zh) * | 2004-05-05 | 2005-01-26 | 王鸿仁 | 影像感测组件半导体晶圆级封装的方法 |
CN1905144A (zh) * | 2005-05-27 | 2007-01-31 | 阿瓦戈科技通用Ip(新加坡)股份有限公司 | 用于封装图像传感器的方法和封装的图像传感器 |
CN101950751A (zh) * | 2009-07-10 | 2011-01-19 | 菱光科技股份有限公司 | 图像传感器及其封装方法 |
CN103064209A (zh) * | 2013-01-30 | 2013-04-24 | 京东方科技集团股份有限公司 | 一种液晶显示面板制备方法 |
CN104167380A (zh) * | 2014-05-30 | 2014-11-26 | 上海芯哲微电子科技有限公司 | 一种smt贴片封装结构的smt贴片封装方法 |
CN105405777A (zh) * | 2015-12-24 | 2016-03-16 | 上海源模微电子有限公司 | 一种大面积平行堆栈式封装结构和封装方法 |
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Publication number | Publication date |
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CN107808888A (zh) | 2018-03-16 |
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PB01 | Publication | ||
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Address after: 214000 No.2 Yanggong Road, Liangxi District, Wuxi City, Jiangsu Province Patentee after: JACAL ELECTRONIC (WUXI) Co.,Ltd. Address before: No. 10, Lianhe Road, North District, Hudai Industrial Park, Binhu District, Wuxi City, Jiangsu Province (3rd floor, building a, Hudai Industrial Park, Liyuan Development Zone) Patentee before: JACAL ELECTRONIC (WUXI) Co.,Ltd. |
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PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: A Packaging Process for CMOS Image Sensors Effective date of registration: 20230728 Granted publication date: 20201201 Pledgee: Wuxi Branch of China Everbright Bank Co.,Ltd. Pledgor: JACAL ELECTRONIC (WUXI) Co.,Ltd. Registration number: Y2023980049955 |