CN107799402A - The forming method of secondary figure - Google Patents
The forming method of secondary figure Download PDFInfo
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- CN107799402A CN107799402A CN201711000796.0A CN201711000796A CN107799402A CN 107799402 A CN107799402 A CN 107799402A CN 201711000796 A CN201711000796 A CN 201711000796A CN 107799402 A CN107799402 A CN 107799402A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0338—Process specially adapted to improve the resolution of the mask
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Abstract
A kind of forming method of secondary figure, including：Substrate is provided, the substrate surface is formed with the first hard mask layer, and the first hard mask layer surface is formed with the second hard mask layer；Graphical second hard mask layer, some the first discrete figures are formed in the first hard mask surface；The photoresist layer for covering first figure and the first hard mask layer surface is formed, the photoresist layer includes photo-acid generator；First is carried out to the photoresist layer between the first figure to expose, the photo-acid generator in the photoresist layer being exposed produces acid；Negative development technique is carried out, unexposed photoresist layer is removed, second graph is formed between the first adjacent figure；Using second graph and the first figure as mask, first hard mask layer is etched.The first figure and second graph size and spacing that the method for the present invention is formed are less simultaneously, reduce the manufacture difficulty and cost of used optical mask plate when being exposed to the photoresist layer containing photo-acid generator.
Description
Technical field
The present invention relates to field of semiconductor fabrication, more particularly to a kind of forming method of secondary figure.
Background technology
With the continuous diminution of the minimum feature and spacing of IC design, when exposure lines characteristic size close to
During the theory resolution power of exposure system, serious distortion will occur for optical patterning, so as to cause the tight of litho pattern quality
Decline again.In order to reduce the influence of optical proximity effect, industrial quarters proposes photoetching resolution enhancing technology, quadratic diagram therein
Shape technique (DPT：Double Patterning Technology) it is considered as to fill up immersion lithography and extreme ultraviolet photolithographic
(EUV) powerful guarantee of wide gap between.
Existing than more typical quadratic diagram shape technique is Twi-lithography and twice etching technique (Litho Etch Litho
Etch, LELE) technique or dual developing process (Dual-tone Development, DDT).
LELE (Litho Etch Litho Etch) technique is to carry out Twi-lithography to same pending substrate and carve twice
Erosion, forms semiconductor figure so that the minimum spacing between two adjacent semiconductor figures is relative to once in pending substrate
Photoetching and once etching become smaller.It is existing that secondary figure is formed using LELE (Litho Etch Litho Etch) technique
The process of (double pattern) includes：Substrate is provided, sequentially forms material layer to be etched and the first light on the substrate
Photoresist layer, exposure light are exposed by the first mask plate to the first photoresist layer, and first is formed in the first photoresist layer
Exposure region；Developing process is carried out, removes the first exposure region in the first photoresist layer, forms the first photoetching with the first opening
Glue-line；Using the first photoresist layer as mask, the material layer to be etched is etched along the first opening, forms the second opening；Remove the
One photoresist layer, the second photoresist layer is formed in material layer to be etched and substrate, exposure light is by the second mask plate to
Two photoresist layers are exposed, and the second exposure region is formed in the second photoresist layer；Developing process is carried out, removes the second photoresist
Second exposure region of layer, form the second photoresist layer with the 3rd opening；Using the second photoresist layer as mask, along the 3rd opening
The material layer to be etched is etched, the 4th opening is formed in material layer to be etched；The second photoresist layer is removed, in material to be etched
Secondary figure is formed in the bed of material.
But the size and spacing of the secondary figure of foregoing LELE techniques formation are still larger.
The content of the invention
The present invention solve the problems, such as be secondary figure manufacturing process in, how can reduce secondary figure size and
Away from, while the feature sizes of the optical mask plate used can keep larger, the manufacture difficulty and production costs of reduction amount optical mask plate
With.
To solve the above problems, the present invention provides a kind of forming method of secondary figure, including：
Substrate is provided, the substrate surface is hard formed with second formed with the first hard mask layer, the first hard mask layer surface
Mask layer；Graphical second hard mask layer, forms some the first discrete figures on the first hard mask layer surface；Shape
Into the photoresist layer for covering first figure and the first hard mask layer surface, the photoresist layer includes photo-acid generator；
First is carried out to the photoresist layer between first figure to expose, the photo-acid generator in the photoresist layer being exposed produces
Acid；Negative development technique is carried out, unexposed photoresist layer is removed, second graph is formed between the first adjacent figure；With institute
It is mask to state second graph and the first figure, etches first hard mask layer.
Optionally, the photoresist for being exposed part is hydrophilic and do not dissolve in the developer solution used during negative development technique,
Unexposed part photoresist is not hydrophilic and be dissolved in the developer solution used during negative development technique.
Optionally, the energy of first exposure is..The developer solution that the negative development technique uses for n-butyl acetate,
Glycol ethers or fragrant footpath.
Optionally, the photoresist layer between the first figure carries out the first exposure and uses the first photomask blank, described
First photomask blank has some first openings corresponding with some second graphs.
Optionally, before the unexposed photoresist layer step by development removal, in addition to：To first figure
The photoresist layer of top surface carries out the second exposure.
Optionally, the photoresist layer to the first figure top surface carries out the second exposure and uses the second photomask
Plate, there is some second openings corresponding with the first figure in second optical mask plate.
Optionally, the size of the photoresist layer of second exposure is corresponding with the size of the first figure.
Optionally, it is described to carry out the first exposure with after the second exposure, pass through negative development technique and remove unexposed photoresist
Layer, second graph is formed between the first adjacent figure, and the 3rd figure is formed in the first figure top surface.
Optionally, using first figure, the 3rd figure and second graph as mask, first hard mask layer is etched.
Optionally, the process of graphical second hard mask layer includes：Figure is formed in the second mask layer surface
The photoresist layer of change, have in the patterned photoresist layer and expose second some openings of mask layer surface；With the figure
The photoresist layer of shape is mask, etches second mask layer, some the first discrete figures are formed in the first mask layer surface
Shape；Remove the patterned photoresist layer.
Compared with prior art, technical scheme has advantages below：
The forming method of the secondary figure of the present invention, first pass through the first hard mask layer of etching and form the first figure, then the
Formed between one figure second graph, the first figure of formation and the size of second graph and between spacing can be smaller, and
And photoresist is used when forming second graph, the photoresist layer includes photo-acid generator, by being carried out to photoresist layer
During exposure, photo-acid generator can produce light acid when exposure light irradiates, and unexposed photoresist is removed by negative development technique
Layer, so as to form second graph between the first adjacent figure, the second graph of formation will not deform so that form the second figure
The precision of the size of shape is higher, and photoresist layer is exposed and during negative development, due to the photoresist of part being exposed
Layer is retained, thus when forming the secondary figure of equal reduced size and spacing, and the present invention is when forming second graph pair
The optical mask plate (the first optical mask plate) that photoresist containing photo-acid generator uses when being exposed is covered relative to existing light
The size of the lightproof part of diaphragm plate can be with larger, thus makes the present invention and be used to carry out the photoresist containing photo-acid generator
The manufacture difficulty of the optical mask plate used during exposure reduces, and (size of the lightproof part of photomask blank is bigger, system for cost reduction
When making optical mask plate, the distance between two adjacent apertures can be bigger in the photoresist layer that layer on surface of metal is formed, thus graphically
The difficulty of the exposure technology of the photoresist layer is smaller).
Further, except carrying out the first exposure to photoresist layer, to be formed between second graph outside second graph, entering
Before row negative development, the second exposure is also carried out, to form the 3rd figure with second graph with material in the first figure top surface
Shape, so that the total height and second graph of the 3rd figure and the first figure is highly consistent, with the 3rd figure, the first figure
When shape and second graph are the first hard mask layer of mask etching, when can prevent only the first figure and second graph, due to first
The etching difference of the inconsistent diverse location brought of the height of figure and second graph, so that in the first mask layer of etching
The precision of the mask of formation and the uniformity of pattern are higher, thus further improve the chi of the secondary figure formed in substrate
Very little precision and the uniformity of pattern.
Brief description of the drawings
Fig. 1-6 is the structural representation of the secondary pattern formation process of one embodiment of the invention；
Fig. 7-10 is the structural representation of the forming process of the secondary figure of another embodiment of the present invention.
Embodiment
As background technology is sayed, the size and spacing for the secondary figure that existing LELE techniques are formed are still larger.
To provide a kind of forming method of secondary figure in this one embodiment of the invention, including：Substrate, the base are provided
Basal surface is formed with the first hard mask layer, and the first hard mask layer surface is formed with the second hard mask layer；In the described second hard mask
Layer forms the first photoresist layer；First photoresist layer is exposed, and developed, removes the first photoresist being exposed
Layer, form patterned first photoresist layer；Covered firmly as described in mask etching second using patterned first photoresist layer
Film layer, some the first discrete figures are formed in the first hard mask surface；Formed and cover first figure and the first hard mask
Second photoresist layer of layer surface；Second photoresist layer is exposed, and developed, removes the second photoresist being exposed
Layer, second graph is formed to the first hard mask layer surface between the first figure, second graph is unexposed second photoresist layer；
Using second graph and the first figure as mask, first hard mask layer is etched, forms secondary figure.The secondary figure shape of embodiment
Into method, during due to forming the first figure, the size and spacing of the first figure can be smaller, then pass through second of photoetching work
Skill, forms the less second graph of size between the first figure, thus the size of the first figure and second graph and both it
Between spacing can be with very little so that the secondary figure formed using the first figure and second graph as the hard mask layer of mask etching first
Size and spacing all reduce, but under the program, the making of the optical mask plate used when being exposed to the second photoresist layer
Difficulty is larger, and cost of manufacture is higher.
Research finds that optical mask plate includes transmission region and light tight region, and optical mask plate is transparent typically by etching
Metal level (such as layers of chrome) on substrate；Then the photoresist layer with opening is formed in metal level；Then using photoresist layer as
Mask, along opening etch remove metal level, metal level be etched removal part be correspondingly formed groove or opening be used as transparent area
Domain so that exposure light can be passed through and is exposed to the second photoresist layer, and the metal level not being etched is as light tight region.
In previous embodiment, part that the second photoresist layer is not exposed, which is retained between the first figure, forms second graph, and second
Width (size) of the width (size) of figure dependent on the light tight region of optical mask plate, and constantly carrying with technological requirement
It is high, it is necessary to the width (size) of second graph also constantly reduce so that the width (chi of the light tight region in optical mask plate
It is very little) also constantly reduce, thus increased by the difficulty of photoetching and the light tight region of the optical mask plate of etching technics formation small size
(the distance between two adjacent apertures in photoresist layer can be smaller, the exposure difficulty increase of graphical photoresist layer) greatly, makes
It is costly.
Therefore, providing a kind of forming method of secondary figure in another embodiment of the present invention, can not only reduce secondary
The size and spacing of figure, and the feature sizes of the optical mask plate used during secondary figure is made can keep compared with
Greatly, the manufacture difficulty and manufacturing cost of reduction amount optical mask plate.
It is understandable to enable the above objects, features and advantages of the present invention to become apparent, below in conjunction with the accompanying drawings to the present invention
Specific embodiment be described in detail.When the embodiment of the present invention is described in detail, for purposes of illustration only, schematic diagram can disobey general proportion
Make partial enlargement, and the schematic diagram is example, and it should not be limited the scope of the invention herein.In addition, in reality
The three-dimensional space of length, width and depth should be included in making.
Fig. 1-6 is the structural representation of the secondary pattern formation process of one embodiment of the invention.
With reference to figure 1, there is provided substrate 201, the surface of substrate 201 is formed with the first hard mask layer 202, the first hard mask layer
201 surfaces are formed with the second hard mask layer 203.
The substrate 201 to be layer to be etched, the material of the substrate 201 can be semi-conducting material (such as silicon (Si),
Germanium (Ge) or SiGe (GeSi), carborundum (SiC)；Can also be silicon-on-insulator (SOI), germanium on insulator (GOI)), or
Metal material (such as W, Al, Cu, Ti, Ag, Au, Pt, Ni one of which or several).The substrate 201 can also be other conjunctions
Suitable material.
The substrate 201 can be single or multiple lift stacked structure.
The surface of substrate 201 is hard formed with second formed with the first hard mask layer 202, the surface of the first hard mask layer 202
Mask layer 203, the first hard mask layer 202 and the second hard mask layer 203 are subsequently used for forming mask.The He of first hard mask layer 202
The material of second hard mask layer 203 can be the same or different.In one embodiment, the first hard mask layer 202 and second is hard
The material of mask layer 203 differs, and the material of first hard mask layer 202 is metallic compound, such as metal nitride,
TiN or TaN, the material of the second hard mask layer 203 are SiO2, SiN, SiON, SiCN, SiC, BN, subsequently etching when so that mask
There is high etching selection ratio relative to layer to be etched, be advantageous to improve secondary the figure pattern and width of middle formation layer to be etched
Uniformity.
The surface of second hard mask layer 203 is also formed with patterned photoresist layer 204, the patterned photoetching
The photoresist layer 204 of glue-line 204 forms mask during the first figure as subsequent patterning second hard mask layer 203, graphically
Photoresist layer 204 formed by spin coating, exposed and developed technique.
With reference to figure 2, graphical second hard mask layer 203 (with reference to figure 1), if being formed on the first hard surface of mask 202
Dry the first discrete figure 205.
Etch second hard mask layer 203 and use dry etch process, in one embodiment, using plasma etching work
Skill etches second hard mask layer 203, forms some first figures 205.In one embodiment, the plasma etching work
The gas that skill uses includes the gas of carbon containing fluorine, such as CF4、C2F6Or CHF3In one or more.
The first figure 205 is formed, removes the patterned photoresist layer 204.In another embodiment, it is described graphical
Photoresist layer 204 can synchronously be removed during the first figure 205 is formed.
With reference to figure 3, the photoresist layer 206 for covering the surface of 205 and first hard mask layer of the first figure 202, institute are formed
Stating photoresist layer 206 includes photo-acid generator.
The formation process of the photoresist layer 206 is spin coating.In the present embodiment, directly in the first figure and the first hard mask
Layer surface forms photoresist layer 206.In other embodiments, before photoresist layer 206 is formed, formed and fill adjacent first figure
Organic packed layer of opening between shape 205, photoresist layer 206 is then formed on organic packed layer, forming photoresist layer
Influence of the rugged surface to photoresist layer is prevented when 206 so that the photoresist layer 206 of formation there can be flatter table
Face, the second graph formed subsequently through photoresist layer 206 and organic packed layer have the uniform of higher thickness and width
Property, be advantageous to improve the uniformity of secondary the figure pattern and width of middle formation layer to be etched.
The photoresist layer 206 includes photo-acid generator, when being subsequently exposed to photoresist layer 206, photic production acid
Agent can produce light acid when exposure light irradiates so that the photoresist (photoresist for producing light acid moieties) for being exposed part is parent
Water and the developer solution used during negative development technique is not dissolved in, unexposed part photoresist is not hydrophilic and be dissolved in negative development technique
Shi Caiyong developer solution, i.e., subsequently unexposed photoresist layer 206 can be removed by negative development technique, so as to adjacent the
Second graph is formed between one figure 205, the second graph of formation will not deform so that form the precision of the size of second graph
It is higher, and due to the photoresist layer 206 using the present embodiment, subsequently using the first photomask blank 21 (with reference to figure 4) to photoetching
When glue-line 206 is exposed with negative development, because the photoresist layer 206 of part being exposed is retained, formed it is equal compared with
During the secondary figure of small size and spacing, the first photomask blank 21 in the embodiment of the present invention is relative to existing photomask blank
Manufacture difficulty reduces, and cost reduces, the reason for this is that：When making the first photomask blank 21 in the present embodiment, the first photomask blank 21
The size or space D (with reference to figure 4) of lightproof part 23 can be with larger (existing compared to existing photomask blank size or spacing
Quadratic diagram shape manufacture craft in, be exposed part and be removed, i.e., lighttight part and in Fig. 4 the in existing optical mask plate
The correspondence of one photomask blank, 21 light transmission part 22, the size of the lightproof part 23 of the first photomask blank 21 is much larger than printing opacity in Fig. 4
The size of part 22).
In one embodiment, the photo-acid generator includes salt, succinimide derivatives, diazonium compound and nitro
At least one of benzyl compounds.
With reference to figure 4, the first exposure, the photoresist layer being exposed are carried out to the photoresist layer 206 between the first figure 205
Photo-acid generator in 206 produces acid, and formation is exposed area 207.
The progress of photoresist layer 206 first between the first figure 205, which exposes, uses the first photomask blank 21, and first
Photomask blank 21 includes lightproof part 23 and light transmission part 22, and first photomask blank 21 has and some second graphs pair
Some first openings (i.e. light transmission part 22) answered, the first exposure process is carried out in exposure sources, before being exposed, first
First optical mask plate 21 is aligned with substrate 201, when being exposed, exposure light passes through the first 22 photolithographies of opening
Glue-line 26, the photo-acid generator being exposed in the photoresist layer 206 of (or irradiation) produce acid, and formation is exposed area 207.
The photoresist (being exposed area 207) of (illuminated) part is exposed to be hydrophilic and when not dissolving in follow-up negative development technique
The developer solution of use, unexposed part photoresist are not hydrophilic and be dissolved in the developer solution used during follow-up negative development technique.
In one embodiment, the energy of first exposure is 10~20mj/cm2, to be exposed the photic of part
Acid agent preferably produces acid.
After exposure, in addition to, after being exposed baking handle, to cause the photo-acid generator for being exposed part further to produce
Raw acid so that during negative development technique, being exposed area 207 will not be dissolved in developer solution, and being exposed area 207 can more completely be protected
Stay, the uniformity of the pattern of the second graph of the formation of raising and the precision of size..
With reference to figure 5, negative development technique is carried out, unexposed photoresist layer 206 (with reference to figure 4) is removed, adjacent first
Second graph 208 is formed between figure 205.
In the present embodiment, the developer solution that the negative development technique uses is n-butyl acetate, so as to when being developed, second
Sour N-butyl is to the dissolution rate very little for being exposed area 207 that is formed in photoresist 206, to form second graph 208, and to photoetching
It is unexposed in glue 206 to be partly dissolved that rate is higher, so as to while the high pattern of dimensional accuracy higher second graph is formed,
Improve fixing efficiency and prevent the residual of photoresist.
In other embodiments, the developer solution can also be glycol ethers or fragrant footpath.With reference to figure 6, with the He of second graph 208
First figure 205 is mask, etches first hard mask layer 202 (with reference to figure 5), forms secondary mask pattern 209.
Etch first hard mask layer 202 and use anisotropic plasma etch process.
In other embodiments, when formed with organic packed layer, before etching the first hard mask layer 202, with the second figure
Shape 208 is mask, remaining organic after etching using anisotropic plasma etch process etching organic packed layer
Packed layer also serves as a part for second graph.
After secondary mask pattern 209 is formed, with the second graph 208, the first figure 205 and secondary mask pattern
209 be mask, etches the substrate 201, secondary figure is formed in substrate 201.
Fig. 7-10 is the structural representation of the forming process of the secondary figure of another embodiment of the present invention.The present embodiment with it is foregoing
The difference of embodiment is, in addition to carrying out the first exposure, before negative development is carried out, the second exposure is also carried out, with first
The top surface of figure 205 forms the 3rd figure with material with second graph so that the total height of the 3rd figure and the first figure
It is highly consistent with second graph, when using the 3rd figure, the first figure and second graph as the first hard mask layer of mask etching,
When can prevent only the first figure and second graph, the different positions brought because the height of the first figure and second graph is inconsistent
The etching difference put, so that the precision of the size of the secondary mask pattern formed in the first mask layer and pattern is equal
Even property is higher, thus further improves the precision of size and the uniformity of pattern of the secondary figure formed in substrate 201.
It should be noted that the restriction in the present embodiment with same or similar structure in previous embodiment refer to previous embodiment,
This is repeated no more.
With reference to figure 7, the first exposure, the photoresist layer being exposed are carried out to the photoresist layer 206 between the first figure 205
Photo-acid generator in 206 produces acid, and formation is exposed area 207 (first is exposed area).
The photoresist layer 206 between the first figure 205 carries out the first exposure and uses the first photomask blank 21.
With reference to figure 8, by developing before removing unexposed photoresist layer step, in addition to：To first figure 205
The photoresist layer 206 of top surface carries out the second exposure, and formation is exposed area 210 (second is exposed area).
The photoresist layer 206 to the top surface of the first figure 205 carries out the second exposure and uses the second photomask
Plate 22, has in second optical mask plate 22 and 205 corresponding some second openings of the first figure.
The exposure region 210 of formation is located at the top surface of the first figure 205, and the width (size) of exposure region 210 and the
The width (size) of one figure 205 is consistent or correspondingly.
Carry out before second exposure can expose with first or before.
It is described to carry out the first exposure with after the second exposure with reference to figure 9, pass through negative development technique and remove unexposed photoresist
Layer, second graph 207 is formed between the first adjacent figure 205, the 3rd figure is formed in the top surface of the first figure 205
211。
When carrying out negative development technique, unexposed photoresist is removed, and is exposed area 207 (with reference to figure 8) and is retained formation
Second graph 208, it is exposed area 210 (with reference to figure 8) and is retained the 3rd figure 211 of formation, the 3rd figure 211 and the first figure
205 total height (gross thickness) is consistent with the height (thickness) of second graph 208.
With reference to figure 10, with first figure 205, the 3rd figure 211 and second graph 208 for mask, etching described the
One hard mask layer 202, form secondary mask pattern 212.
Also include, be to cover with first figure 205, the 3rd figure 211, second graph 208 and secondary mask pattern 212
Film, etches the substrate, forms secondary figure in the substrate.
Although present disclosure is as above, the present invention is not limited to this.Any those skilled in the art, this is not being departed from
In the spirit and scope of invention, it can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
The scope of restriction is defined.
Claims (10)
- A kind of 1. forming method of secondary figure, it is characterised in that including：Substrate is provided, the substrate surface is formed with the first hard mask layer, and the first hard mask layer surface is formed with the second hard mask Layer；Graphical second hard mask layer, forms some the first discrete figures on the first hard mask layer surface；The photoresist layer for covering first figure and the first hard mask layer surface is formed, the photoresist layer includes photic production Sour agent；First is carried out to the photoresist layer between first figure to expose, the photo-acid generator production in the photoresist layer being exposed Raw acid；Negative development technique is carried out, unexposed photoresist layer is removed, second graph is formed between the first adjacent figure；Using the second graph and the first figure as mask, first hard mask layer is etched.
- 2. the forming method of secondary figure as claimed in claim 1, it is characterised in that it is described be exposed part photoresist be Hydrophilic and do not dissolve in the developer solution used during negative development technique, unexposed part photoresist is not hydrophilic and be dissolved in negative development work The developer solution used during skill.
- 3. the forming method of secondary figure as claimed in claim 2, it is characterised in that the energy of first exposure for 10~ 20mj/cm2, the developer solution that the negative development technique uses is n-butyl acetate, glycol ethers or fragrant footpath.
- 4. the forming method of secondary figure as claimed in claim 1, it is characterised in that the photoetching between the first figure Glue-line carries out the first exposure and uses the first photomask blank, and first photomask blank has corresponding with some second graphs some First opening.
- 5. the forming method of secondary figure as claimed in claim 1, it is characterised in that described unexposed by removal of developing Before photoresist layer step, in addition to：Second exposure is carried out to the photoresist layer of the first figure top surface.
- 6. the forming method of secondary figure as claimed in claim 5, it is characterised in that described to table at the top of first figure The photoresist layer in face carries out the second exposure and uses the second optical mask plate, has in second optical mask plate corresponding with the first figure It is some second opening.
- 7. the forming method of secondary figure as claimed in claim 5, it is characterised in that the photoresist layer of second exposure Size is corresponding with the size of the first figure.
- 8. the forming method of secondary figure as claimed in claim 5, it is characterised in that described to carry out the first exposure and the second exposure After light, unexposed photoresist layer is removed by negative development technique, second graph is formed between the first adjacent figure, the One figure top surface forms the 3rd figure.
- 9. the forming method of secondary figure as claimed in claim 8, it is characterised in that with first figure, the 3rd figure It is mask with second graph, etches first hard mask layer.
- 10. the forming method of secondary figure as claimed in claim 1, it is characterised in that graphical second hard mask layer Process include：Patterned photoresist layer is formed in the second mask layer surface, is had in the patterned photoresist layer Have and expose second some openings of mask layer surface；Using the patterned photoresist layer as mask, second mask is etched Layer, some the first discrete figures are formed in the first mask layer surface；Remove the patterned photoresist layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711000796.0A CN107799402A (en) | 2017-10-24 | 2017-10-24 | The forming method of secondary figure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201711000796.0A CN107799402A (en) | 2017-10-24 | 2017-10-24 | The forming method of secondary figure |
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| CN111640665A (en) * | 2019-03-01 | 2020-09-08 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device and method of forming the same |
| CN112462580A (en) * | 2019-09-09 | 2021-03-09 | 芯恩（青岛）集成电路有限公司 | Method for manufacturing quadruple pattern |
| CN112614784A (en) * | 2020-12-17 | 2021-04-06 | 上海集成电路装备材料产业创新中心有限公司 | Method for improving appearance line width difference of dense and isolated patterns of fin type device |
| CN112946995A (en) * | 2019-12-10 | 2021-06-11 | 中芯国际集成电路制造(上海)有限公司 | Mask and method for forming semiconductor structure |
| CN113495430A (en) * | 2020-04-07 | 2021-10-12 | 芯恩（青岛）集成电路有限公司 | Photoresist patterning method and photoresist stripping method |
| CN113539794A (en) * | 2020-04-22 | 2021-10-22 | 芯恩（青岛）集成电路有限公司 | Semiconductor structure and preparation method thereof |
| CN113707613A (en) * | 2021-08-12 | 2021-11-26 | 长鑫存储技术有限公司 | Method for forming semiconductor structure |
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| CN112462580A (en) * | 2019-09-09 | 2021-03-09 | 芯恩（青岛）集成电路有限公司 | Method for manufacturing quadruple pattern |
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| CN113495430B (en) * | 2020-04-07 | 2023-09-26 | 芯恩（青岛）集成电路有限公司 | Photoresist patterning method and photoresist stripping method |
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| CN112614784A (en) * | 2020-12-17 | 2021-04-06 | 上海集成电路装备材料产业创新中心有限公司 | Method for improving appearance line width difference of dense and isolated patterns of fin type device |
| CN113707613A (en) * | 2021-08-12 | 2021-11-26 | 长鑫存储技术有限公司 | Method for forming semiconductor structure |
| CN113707613B (en) * | 2021-08-12 | 2023-07-04 | 长鑫存储技术有限公司 | Method for forming semiconductor structure |
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