CN113495430A - Photoresist patterning method and photoresist stripping method - Google Patents
Photoresist patterning method and photoresist stripping method Download PDFInfo
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- CN113495430A CN113495430A CN202010264995.8A CN202010264995A CN113495430A CN 113495430 A CN113495430 A CN 113495430A CN 202010264995 A CN202010264995 A CN 202010264995A CN 113495430 A CN113495430 A CN 113495430A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
Abstract
The invention provides a photoresist patterning method and a photoresist stripping method, wherein after a photoresist layer is exposed to form an exposure area and a non-exposure area, the top of the exposure area is processed to form a pre-blocking layer, or the non-exposure area is removed by combining a negative development technology to form a first pattern structure, then the first pattern structure is subjected to plasma processing, so that the pre-blocking layer reacts to form a blocking layer, and the photoresist layer below the blocking layer is etched to form a second pattern structure with a wide upper part and a narrow lower part. The blocking layer is beneficial to keeping the top size of the second pattern structure, and the photoresist layer is drilled and etched, so that the second pattern structure with a wide top and a narrow bottom is formed. And depositing a metal layer after forming a pattern structure with a wide upper part and a narrow lower part on the substrate, and removing the photoresist to realize photoresist stripping. The process may remove the exposed photoresist using, for example, a forward developing technique. The reagent adopted in the whole process can not damage the pattern metal layer and the substrate, and the yield is improved.
Description
Technical Field
The present invention relates to the field of semiconductor integrated circuit manufacturing, and more particularly, to a photoresist patterning method and a photoresist stripping method.
Background
In the fabrication of semiconductor integrated circuits, a photoresist stripping process is a very common and critical process. For example, in Micro Electro Mechanical Systems (Micro Electro Mechanical Systems) processes, photoresist stripping not only solves the problem of metal etching but also the problem of substrate damage. The key to the photoresist stripping process is the formation of the photoresist pattern. Currently, a negative development technique, a double pattern layer technique, and the like are generally employed. These techniques are often accompanied by the disadvantages of complex processes, difficult pattern control, damage to the substrate, etc.
In view of the above problems in the prior art, it is necessary to provide a photoresist stripping technique that is simple and easy to implement and easy to control the pattern structure.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, it is an object of the present invention to provide a photoresist patterning method and a photoresist stripping method, which form a T-shaped or similar narrow-top pattern structure over a substrate by a silicon-based and oxygen plasma treatment process in combination with a negative development technique, with a simple process, easy implementation, and easy control of the shape and size of the pattern.
To achieve the above and other related objects, the present invention provides a photoresist patterning method, comprising:
providing a substrate, wherein the surface of the substrate is coated with a photoresist layer;
exposing the photoresist layer to form an exposed area and a non-exposed area;
forming a pre-barrier layer on top of the exposed region to form a first pattern structure;
and etching the first pattern structure to form a second pattern structure, wherein the pre-barrier layer forms a barrier layer in the etching process, and the width of the barrier layer in the formed second pattern structure is larger than that of the photoresist layer below the barrier layer.
Optionally, forming a pre-barrier layer on top of the exposed region to form a first pattern structure, further comprising removing the non-exposed region of the photoresist layer using a negative development technique.
Optionally, forming a pre-barrier layer on top of the exposed area to form a first pattern layer, further comprising:
silylating the photoresist layer after exposure;
a silicon-containing polymer layer is formed on top of the photoresist layer in the exposed regions.
Optionally silylating the exposed photoresist layer, further comprising the steps of:
placing the substrate with the exposed photoresist layer in a reaction chamber;
introducing a silicon-based reagent into the reaction chamber;
setting the reaction temperature to be 50-150 ℃;
the first pattern structure is maintained in the reaction chamber for 30 seconds to 900 seconds.
Optionally, the thickness of the pre-barrier layer is between 10nm and 300 nm.
Optionally, etching the first pattern structure to form a second pattern structure further includes:
performing oxygen plasma treatment on the first pattern structure;
the pre-barrier layer is oxidized to an oxide layer to form a barrier layer.
Optionally, the first pattern structure is subjected to oxygen plasma treatment at a temperature of between 80 ℃ and 200 ℃.
Optionally, the barrier layer in the second pattern structure and the photoresist layer under the barrier layer form a T-shaped structure.
Optionally, the photoresist layer under the barrier layer in the second pattern structure is triangular.
The invention also provides a photoresist stripping method, which comprises the following steps:
forming a second pattern structure on the substrate by using the photoresist patterning method provided by the invention;
forming a metal layer over the substrate and the second pattern structure;
and removing the second pattern structure, and forming a patterned metal layer on the substrate.
Optionally, a thickness of the metal layer formed over the substrate and the second pattern structure is not greater than a thickness of a photoresist layer in the second pattern structure.
Optionally, the substrate is a SiC substrate.
As described above, the photoresist patterning method and the photoresist stripping method provided by the present invention have at least the following beneficial effects:
the photoresist patterning method comprises the steps of exposing a photoresist layer to form an exposure area and a non-exposure area, processing the top of the exposure area to form a pre-blocking layer, or removing the non-exposure area by combining a negative development technology to form a first pattern structure, then carrying out plasma processing on the first pattern structure to enable the pre-blocking layer to react to form a blocking layer, and enabling the photoresist layer below the blocking layer to be etched to form a second pattern structure with a wide upper part and a narrow lower part. The method has simple process steps and is easy to realize. The formation of the barrier layer is beneficial to maintaining the top size of the second pattern structure, and the drilling and etching of the photoresist layer are beneficial to forming the second pattern structure with a wide top and a narrow bottom. The method only needs one photoresist layer, so that the thickness of the photoresist layer is favorably reduced, and the cost of each step and the whole process can be reduced.
According to the photoresist stripping method, the pattern structure with the wide upper part and the narrow lower part is formed on the substrate through the photoresist patterning method, then the metal layer is deposited, and finally the photoresist is removed to realize the photoresist stripping. The process may remove the exposed photoresist using, for example, a forward developing technique. The reagent adopted in the whole process can not damage the pattern metal layer and the substrate, and the yield is improved.
Drawings
Fig. 1a to 1c are schematic diagrams illustrating a pattern structure with a wide top and a narrow bottom formed by different processes in the prior art.
Fig. 2a to 2f show a process of forming the pattern structure shown in fig. 1 c.
Fig. 3 is a flowchart illustrating a photoresist patterning method according to an embodiment of the invention.
Fig. 4 shows a schematic view of the provided substrate shown in fig. 3.
Fig. 5 is a schematic view showing exposure of the photoresist layer shown in fig. 4.
Fig. 6 is a schematic view illustrating a first pattern structure formed by performing a silicidation process on the exposed photoresist layer shown in fig. 5.
Fig. 7 is a schematic view illustrating a process performed on the first pattern structure shown in fig. 6 to form a second pattern structure.
Fig. 8 is a schematic diagram illustrating a first pattern structure formed on a substrate according to another embodiment of the present invention.
Fig. 9 is a schematic view of the first pattern structure shown in fig. 8 being processed to form a second pattern structure.
FIG. 10 is a flow chart illustrating a photoresist stripping method according to another embodiment of the present invention.
Fig. 11 is a schematic view showing a metal layer deposited on a substrate having a second pattern structure.
FIG. 12 is a schematic view of a patterned metal layer formed after photoresist stripping.
Description of the element reference numerals
001 substrate
002 protective layer
003 patterned photoresist layer
0031 barrier layer
004 pattern structure
005 thin film layer
0051 patterned thin film layer
100 substrate
101 photoresist layer
Unexposed region of 1011 photoresist layer
1012 photoresist layer exposure area
200 light mask plate
1013 pre-barrier layer
1014 top barrier layer
102 first pattern structure
102' first pattern structure
103 second pattern structure
103' second pattern structure
200 substrate
201 metal layer
201' patterned metal layer
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and although the drawings only show the components related to the present invention and are not drawn according to the number, shape and size of the components in actual implementation, the form, quantity, position relationship and proportion of the components in actual implementation can be changed freely on the premise of implementing the technical solution of the present invention, and the layout form of the components may be more complicated.
The photoresist stripping technology is a key step in the SiC/MEMS process, and the existing photoresist stripping technology generally adopts the negative development technology to form the pattern structure as shown in fig. 1a, which has the disadvantage that the shape of the pattern is not easy to control; or the pattern structure shown in fig. 1b is formed by a double-layer photoresist technique, which is a cumbersome process. In addition, the prior art also forms the pattern structure shown in fig. 1c by forming an oxide protective layer on the substrate and using ion bombardment technique. As shown in fig. 2a to 2f, in the method, a protective layer, for example, an oxide protective layer 002, is formed on the surface of a substrate 001, a patterned photoresist layer 003 is formed above the protective layer, the patterned photoresist layer is subjected to ion bombardment, a barrier layer 0031 with a certain thickness is formed on the top of the patterned photoresist layer, plasma etching is performed to etch the photoresist below the barrier layer to form a T-shaped pattern structure 004, then the protective layer 002, which is not covered by the pattern structure 004, on the surface of the substrate is removed by etching, and then a thin film layer 005, for example, a metal layer, is formed on the substrate. Finally, the photoresist is stripped and the remaining protective layer is removed, thereby forming a final patterned thin film layer 0051.
In summary, it can be seen that the process of forming the structure shown in fig. 1c in the prior art is complicated, involves multiple etching processes, and inevitably causes damage to the substrate. Therefore, in view of the above-mentioned drawbacks of the prior art, the present invention provides a photoresist patterning method and a photoresist stripping method to simplify the patterning process and avoid substrate damage. The present invention will now be described in detail by the following specific embodiments with reference to the accompanying drawings.
Example one
The present embodiment provides a photoresist patterning method, as shown in fig. 3, the method including the steps of:
step S101: providing a substrate, wherein the surface of the substrate is coated with a photoresist layer;
as shown in fig. 4, a photoresist layer 101 is coated on a substrate 100. The substrate 100 may be any substrate on which a pattern structure with a wide top and a narrow bottom is to be formed, such as a silicon wafer, sapphire, or SiC substrate. The substrate 100 may also include various doped and active regions (not shown) configured according to actual design requirements in the art. The photoresist layer 101 may be formed on the surface of the substrate 100 by a conventional means such as spin coating, spray coating, etc.
Step S102: exposing the photoresist layer to form an exposed area and a non-exposed area;
as shown in fig. 5, a photomask 200 is placed above the photoresist layer 101, the photomask 200 has a light-transmitting region and a light-shielding region distributed in a patterned manner, and the photoresist layer 101 is exposed through the photomask 200. As shown in fig. 5, the photoresist layer 101 forms an exposed region 1012 and an unexposed region 1011 at the positions corresponding to the light-transmitting region and the light-shielding region, respectively. After exposure, the photoresist layer forming the exposed regions 1012 and the unexposed regions 1011 is baked, as known to those skilled in the art. The baking process is kept at a certain temperature, so that the photochemical reaction of the photoresist is completely carried out, and simultaneously, the active ingredients generated by the photochemical reaction are diffused in the process, so that the appearance of the photoresist graph is more accurately controlled.
In a preferred embodiment of this embodiment, the photoresist layer 101 is a positive photoresist, which contains a resin and a photoacid generator, wherein the resin structure has an acid-labile or acid-cleavable organic group, and after exposure and baking, the acid-labile or acid-cleavable group in the resin is cleaved, and a hydrophobic polymer is converted into a hydrophilic polymer. The reaction process of the Photo Acid Generator (PAG) and the resin in the photoresist layer during the exposure and baking process is simply illustrated as follows:
exposure:
baking:
as can be seen from the above, after baking, a hydrophilic polymer having hydroxyl groups is formed.
Step S103: forming a pre-barrier layer on top of the exposed region to form a first pattern structure.
As shown in fig. 6, in this embodiment, a pre-blocking layer with a certain thickness is formed on the top of the exposed region by performing a silicidation process on the exposed photoresist layer. In a preferred embodiment, hexamethyldisilazane is used as the silylating agent, although other silane agents such as Trimethylchlorosilane (TMCS), Hexamethyldisilazane (HMDSZ), or other suitable silylating agents may be used. In the preferred embodiment, the substrate 100 with the exposed photoresist layer is first placed in a reaction chamber, and hexamethyldisilazane gas is introduced into the reaction chamber to expose the first pattern structure 102 to a vapor phase HMDS atmosphere. The reaction temperature is set to 50-150 c and the reaction time is maintained between 30-900 seconds such that the silylation reaction occurs in exposed regions 1012 from the surface to form a silicon-containing polymer layer, i.e., a pre-barrier layer, on top of the exposed regions. The reaction process of the silicification reaction is shown as follows:
when the first pattern structure 110 is exposed to the gas-phase HMDS atmosphere, a silylation reaction occurs on the surface layer of the first pattern structure 110, and a silicon-containing polymer layer 1013 is formed on the surface layer, as shown in fig. 6. The thickness of the silicon-containing polymer layer 1013 is controlled by controlling the reaction time and reaction temperature of the silylation reaction. The silicidation reaction gradually reacts downwards from the top surface of the exposure region to form a pre-barrier layer 1013 with a certain thickness, and the thickness of the pre-barrier layer 1013 is 10nm to 300nm within 30 to 900 seconds of reaction time, so far, the type of the first pattern structure 102 shown in fig. 6 can be obtained. For example, in the preferred embodiment of this embodiment, the reaction time is controlled to 300 seconds and the pre-barrier layer 1013 is formed to a thickness of about 100 nm.
The formation thickness of the silicon-containing polymer is controlled by controlling the reaction temperature and time in the silylation treatment process, and meanwhile, the photoresist layer below the silicon-containing polymer layer can be prevented from being damaged by high temperature, so that the integrity of the first pattern structure is ensured, the line width of the first pattern structure is controlled, and the uniformity and the accuracy of the line width of the later etching are ensured.
Step S104: and etching the first pattern structure to form a second pattern structure, wherein the pre-barrier layer forms a barrier layer in the etching process, and the width of the barrier layer in the formed second pattern structure is larger than that of the photoresist layer below the barrier layer.
In the present embodiment, the line width (CD) of the formed exposure region is smaller than the thickness of the photoresist layer 101, and therefore, in the present embodiment, after the first pattern structure 102 is formed, the first pattern structure 102 is directly etched to obtain the final second pattern structure. As shown in fig. 7, in the preferred embodiment of the present embodiment, the first pattern structure 102 is subjected to the anisotropic etchingThe isotropic oxygen plasma treatment is carried out, for example, by controlling the temperature of the plasma between 80 ℃ and 200 ℃. During this oxygen plasma treatment, the silicon-containing polymer layer (i.e., the pre-barrier layer) reacts with oxygen to form a silicon oxide layer, i.e., the barrier layer 1014, and the unexposed areas 1011 of the photoresist layer 101 are reacted away under the action of the oxygen plasma. The photoresist layer of the exposure region under the barrier layer reacts under the action of oxygen plasma to form CO2And H2And O, realizing the drilling and etching of the exposed photoresist below the barrier layer. Finally, the second pattern structure 103 including the barrier layer 1014 and the exposed photoresist layer having a triangle-like shape under the barrier layer as shown in fig. 7 is formed. During the plasma treatment, since the pre-barrier layer forms the barrier layer and the exposed photoresist layer is etched, the upper dimension of the second pattern structure is formed to be larger than the lower dimension, i.e., the second pattern structure with a wider top and a narrower bottom is formed.
In another preferred embodiment of the present embodiment, the line width (CD) of the second pattern structure to be formed is smaller than the thickness of the photoresist layer 101. In this case, it is difficult to obtain an ideal pattern structure by directly processing the first pattern structure shown in fig. 6. In this case, when forming the pre-barrier layer to form the first pattern structure, a further process is required to be performed on the first pattern structure.
As shown in FIG. 8, in the preferred embodiment, the exposed and baked photoresist layer is first developed using a negative developing technique to remove the unexposed areas 1011 and form a first pattern structure 102' that only remains exposed. In a more preferred embodiment, a negative developing solution such as a ketone, ether, ester, alcohol, hydrocarbon, or amide solvent can be used. For example, the preferred embodiment is preferably an alcohol solvent, such as a mixed solution of one or more of 2-heptanone, 4-heptanone, 2-hexanone, 5-methyl-2-hexanone, 2-octanone, 2-nonanone, acetone, cyclohexanone, methylcyclohexanone, acetophenone, acetylacetone, methyl ethyl ketone, methyl isobutyl ketone, and the like.
The photoresist layer 101 including the baked photoresist layer is immersed in the above alcohol solvent to sufficiently dissolve the unexposed region 1012. The negative developing technique can be performed at room temperature without complicated process conditions, and can form a fine pattern with high resolution. In addition, the technology adopts the organic solvent for development, the organic solvent has good solubility to organic matters on the surface of the substrate, and the surface of the substrate is high in cleanliness after development, less in organic residues and free from pollution to subsequent processes.
Then, based on the formed first pattern structure 102 'as described in fig. 8, the first pattern structure 102' is etched to form a second pattern structure. In the preferred embodiment, the first pattern structure 102' is also subjected to an isotropic oxygen plasma treatment, for example, by controlling the temperature of the plasma between 80 ℃ and 200 ℃. During the oxygen plasma treatment, the silicon-containing polymer layer (i.e., the pre-barrier layer) reacts with oxygen to form a silicon oxide layer, i.e., the barrier layer 1014, and the photoresist layer in the exposed area under the barrier layer reacts to form CO under the action of the oxygen plasma2And H2And O, realizing the drilling and etching of the exposed photoresist below the barrier layer. Finally, the second pattern structure 103 'shown in fig. 9 including the barrier layer 1014 and the exposed photoresist layer under the barrier layer is formed, and the second pattern structure 103' is shaped like a T, i.e., a second pattern structure with an upper dimension larger than a lower dimension and a wider top and a narrower bottom is also formed.
In summary, compared with the prior art, the process of forming the second pattern structure with a wide top and a narrow bottom is simple, and the parameters are easy to control, so that the shape and size of the formed pattern are easy to control.
Example two
The present embodiment provides a photoresist stripping method, as shown in fig. 10, the method includes the following steps:
step S201, first, a second pattern structure is formed on the substrate according to the photoresist patterning method provided in the first embodiment;
in this embodiment, the substrate 200 may also be any substrate that needs to be patterned by a photoresist stripping technique, such as a silicon wafer, sapphire, or SiC substrate. The substrate may also include various doped and active regions (not shown) configured according to actual design requirements in the art. A second pattern structure 103 (103') as shown in fig. 7 or fig. 9 is formed on the substrate according to the method of the first embodiment.
Step S202: forming a metal layer over the substrate and the second pattern structure;
in the present embodiment, the second pattern structure 103' shown in fig. 9 is used for illustration. As shown in fig. 11, after forming the second pattern structure 103 'as described in fig. 9, a metal layer 201 is deposited on the surface of the substrate 200 and the surface of the second pattern structure 103'. Since the second pattern structure 103 ' is a T-shaped structure with a wide top and a narrow bottom, the metal layer 201 on the surface of the substrate and the exposed region 1012 on the middle and lower portion of the second pattern structure 103 ' have a spacing distance under the shielding effect of the barrier layer 1014 on the upper portion of the second pattern structure 103 '.
In a preferred embodiment of this embodiment, a metal layer 201, which is generally a metal that is difficult to etch by a conventional wet or dry etching method, such as, but not limited to, copper, gold, titanium, nickel, silver, platinum, chromium, may be grown on the surface of the substrate 200 and the second pattern structure 103' by physical sputtering or evaporation. And the thickness of the metal layer 201 is usually between 0.1 μm and 40 μm, and in order to prevent the adhesion of the metal layer on the surface of the second pattern structure to the metal layer on the surface of the substrate, the thickness of the metal layer is smaller than the thickness of the photoresist layer in the exposed region under the barrier layer.
Step S203: and removing the second pattern structure, and forming a patterned metal layer on the substrate.
After the metal layer 201 is formed, the second pattern structure needs to be stripped. In the preferred embodiment of this embodiment, the photoresist layer in the exposed region is removed by using a photoresist stripper, and at the same time, the barrier layer on the photoresist layer in the exposed region and the metal layer on the barrier layer are also removed, while the metal layer on the substrate 200 is remained, to finally form the patterned metal layer 201' shown in FIG. 12. The patterned metal layer may serve as a lead (or interconnect) line or electrode of the semiconductor device. In a preferred embodiment, an alkaline solution is used as the photoresist stripping solution for the exposed photoresist layer, for example, a TMAH developer is selected.
The photoresist stripping method also adopts the organic solvent for development, the organic solvent has good solubility to organic matters on the surface of the substrate, the cleanliness of the surface of the substrate is high after development, organic residues are few, and the deposited metal layer and the substrate cannot be damaged.
As described above, the photoresist patterning method and the photoresist stripping method provided by the present invention have at least the following beneficial effects:
the photoresist patterning method comprises the steps of exposing a photoresist layer to form an exposure area and a non-exposure area, processing the top of the exposure area to form a pre-blocking layer, or removing the non-exposure area by combining a negative development technology to form a first pattern structure, then carrying out plasma processing on the first pattern structure to enable the pre-blocking layer to react to form a blocking layer, and enabling the photoresist layer below the blocking layer to be etched to form a second pattern structure with a wide upper part and a narrow lower part. The method has simple process steps and is easy to realize. The formation of the barrier layer is beneficial to maintaining the top size of the second pattern structure, and the drilling and etching of the photoresist layer are beneficial to forming the second pattern structure with a wide top and a narrow bottom. The method only needs one photoresist layer, so that the thickness of the photoresist layer is favorably reduced, and the cost of each step and the whole process can be reduced.
According to the photoresist stripping method, the pattern structure with the wide upper part and the narrow lower part is formed on the substrate through the photoresist patterning method, then the metal layer is deposited, and finally the photoresist is removed to realize the photoresist stripping. The process may remove the exposed photoresist using, for example, a forward developing technique. The reagent adopted in the whole process can not damage the pattern metal layer and the substrate, and the yield is improved.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (12)
1. A method of patterning a photoresist comprising the steps of:
providing a substrate, wherein the surface of the substrate is coated with a photoresist layer;
exposing the photoresist layer to form an exposed area and a non-exposed area;
forming a pre-barrier layer on top of the exposed region to form a first pattern structure;
and etching the first pattern structure to form a second pattern structure, wherein the pre-barrier layer forms a barrier layer in the etching process, and the width of the barrier layer in the formed second pattern structure is larger than that of the photoresist layer below the barrier layer.
2. The method of claim 1, wherein forming a pre-barrier layer on top of the exposed regions to form a first pattern structure further comprises removing the non-exposed regions of the photoresist layer using a negative development technique.
3. The method of claim 1, wherein forming a pre-barrier layer on top of the exposed region to form a first patterned layer further comprises:
silylating the photoresist layer after exposure;
a silicon-containing polymer layer is formed on top of the photoresist layer in the exposed regions.
4. The method of claim 3, wherein silylating the exposed photoresist layer further comprises:
placing the substrate with the exposed photoresist layer in a reaction chamber;
introducing a silicon-based reagent into the reaction chamber;
setting the reaction temperature to be 50-150 ℃;
the first pattern structure is maintained in the reaction chamber for 30 seconds to 900 seconds.
5. The method of claim 1, wherein the pre-barrier layer has a thickness of 10nm to 300 nm.
6. The method of claim 1, wherein etching the first pattern structure to form a second pattern structure further comprises:
performing oxygen plasma treatment on the first pattern structure;
the pre-barrier layer is oxidized to an oxide layer to form a barrier layer.
7. The photoresist patterning method of claim 6, wherein the first pattern structure is subjected to oxygen plasma treatment at a temperature between 80 ℃ and 200 ℃.
8. The method of claim 1, wherein the barrier layer in the second pattern structure forms a T-shaped structure with the photoresist layer under the barrier layer.
9. The method of claim 1, wherein the photoresist layer under the barrier layer in the second pattern structure is a triangular structure.
10. A photoresist stripping method is characterized by comprising the following steps:
forming a second pattern structure on the substrate using the photoresist patterning method of any one of claims 1 to 9;
forming a metal layer over the substrate and the second pattern structure;
and removing the second pattern structure, and forming a patterned metal layer on the substrate.
11. The photoresist stripping method according to claim 10, wherein the thickness of the metal layer formed over the substrate and the second pattern structure is not greater than the thickness of the photoresist layer in the second pattern structure.
12. The resist stripping method according to claim 10, characterized in that the substrate is a SiC substrate.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115541558A (en) * | 2022-12-02 | 2022-12-30 | 季华实验室 | SERS substrate manufacturing method and SERS substrate |
| CN117594436A (en) * | 2024-01-18 | 2024-02-23 | 汉轩微电子制造(江苏)有限公司 | Method for stripping metal |
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