CN107768328A - A kind of power device for realizing two-side radiation and pressure equilibrium - Google Patents

A kind of power device for realizing two-side radiation and pressure equilibrium Download PDF

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Publication number
CN107768328A
CN107768328A CN201711040631.6A CN201711040631A CN107768328A CN 107768328 A CN107768328 A CN 107768328A CN 201711040631 A CN201711040631 A CN 201711040631A CN 107768328 A CN107768328 A CN 107768328A
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China
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power device
chip
conductive
molybdenum sheet
spring part
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CN201711040631.6A
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CN107768328B (en
Inventor
赵志斌
范思远
倪筹帷
崔翔
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North China Electric Power University
Global Energy Interconnection Research Institute
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North China Electric Power University
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367Cooling facilitated by shape of device
    • H01L23/3672Foil-like cooling fins or heat sinks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367Cooling facilitated by shape of device
    • H01L23/3677Wire-like or pin-like cooling fins or heat sinks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492Bases or plates or solder therefor
    • H01L23/4922Bases or plates or solder therefor having a heterogeneous or anisotropic structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/562Protection against mechanical damage

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

The invention discloses a kind of power device for realizing two-side radiation and pressure equilibrium, power device is divided into two parts, realizes two-side radiation by the power device by setting the conductive contact blade with multiple pan structures;By setting spring part and the recess of pan structure to mechanically connect, the convex sunken place of pan structure is connected with upper molybdenum sheet, chip, lower molybdenum sheet, silver-colored pad, boss and electrically-conductive backing plate successively from top to bottom, realize each spring part, chip is separate, and when one of chip becomes big due to thermal stress suffered by the differences such as structure or thermal expansion, its corresponding spring part can reduce the stress of chip by producing upward displacement, other chips and spring are unaffected, improve the degree of balance of chip stress.Therefore, power device provided by the invention, can solve the problem that conventional power devices encapsulating structure due to heat dispersion is bad, inside chip bear pressure it is uneven and the problem of cause power device packaging structure reliability low.

Description

A kind of power device for realizing two-side radiation and pressure equilibrium
Technical field
The present invention relates to power device package field, more particularly to a kind of power for realizing two-side radiation and pressure equilibrium Device.
Background technology
The advantage that Modern Power Electronic Devices have high-power, driving simply and switching frequency is high, power output are larger Electronic component is referred to as power device, including:High power transistor, IGCT, bidirectional thyristor, GTO, MOSFET, IGBT etc.. Such as power device insulated gate bipolar transistor is grid voltage type driving element, have working frequency is high, power density is big, Reliability is high, is easy to the advantages that series connection, big in high pressures such as traffic traction field, industrial frequency transformer and flexible direct-current transmission fields Power occasion is widely used.
In the prior art, power device generally uses modular structure, by taking power device IGBT as an example, an IGBT power device Part includes some igbt chips.Initial IGBT packing forms are welded type, i.e.,:Igbt chip is passed through into welding manner and one piece The substrate connection of heat conduction non-conducting, remaining lead-out wire are connected using bonding line with external tapping.This welding structure can only be in substrate Side realizes that one side radiates, and causes that the thermal resistance between igbt chip and radiator is higher, and radiating effect is bad, so as to cause junction temperature liter Height, power device IGBT normal work is influenceed, and welded type encapsulating structure employs bonding technology, its interconnector mistake It is more, influence power device IGBT reliability.For the situation of above-mentioned one side radiating, practitioner proposes a kind of full-pressure-welding encapsulation Structure, i.e.,:The structures such as molybdenum sheet and power chip are positioned into placement successively, then crimping forms.Crimping type packaging structure is in theory Two-side radiation can be realized, and eliminates the excessive influence of bonding line.But after using this structure, each power chip Suffered pressure can change, the position of chip, difference in thickness with the change of temperature and electric current, the out-of-flatness of encapsulating structure processing Degree, and the difference that the characteristic of expanding with heat and contract with cold of each element of inside configuration is brought during work can make it that each chip pressure value is uneven Weighing apparatus.Power chip pressure, which crosses conference, makes chip produce mechanical failure, and pressure is too small, and the junction temperature of power chip can be made to increase, The reliability of power device substantially reduces.Therefore, the reliability of power device how is improved, is that power device field is badly in need of solving Technical problem.
The content of the invention
It is an object of the invention to provide a kind of power device for realizing two-side radiation and pressure equilibrium, traditional work(can solve the problem that Rate device encapsulation structure is uneven and cause power device to seal because heat dispersion is bad, power device inside chip bears pressure The problem of assembling structure reliability is low.
To achieve the above object, the invention provides following scheme:
A kind of power device for realizing that two-side radiation and pressure are balanced, the power device are crimping type packaging structure, institute Stating power device includes conductive cover plate, spring part, conductive contact blade, upper molybdenum sheet, chip, lower molybdenum sheet, silver-colored pad, boss and conduction Substrate;
The conductive contact blade includes anchor ring, bottom surface and transition piece;The bottom surface and the anchor ring pass through the mistake Cross part connection;The anchor ring is located on the bottom surface;The bottom surface of the conductive contact blade is rectangle;The bottom surface is provided with more Individual pan structure, and the adjacent pan structure is connected by trapezoidal connector;
One end of the spring part and the recess of the pan structure mechanically connect, the other end of the spring part and institute State conductive cover plate connection;
The convex sunken place of the pan structure from top to bottom successively with the upper molybdenum sheet, chip, the lower molybdenum sheet, described Silver-colored pad, the boss and electrically-conductive backing plate connection.
Optionally, the power device also includes radiating tube;The radiating tube is arranged on the trapezoidal connector;It is described Radiating tube is used to reduce the temperature inside the power device.
Optionally, the power device also includes cushion block;The cushion block is solid rectangle structure;The cushion block is located at Between the anchor ring of the conductive cover plate and the conductive contact blade, and it is connected with the anchor ring;The cushion block is used for described When conductive cover plate surface applies pressure, make gap be present between the anchor ring of the conductive contact blade and the conductive cover plate;Described Gap provides entrance and exit for the radiating tube.
Optionally, the power device also includes housing;The conductive cover plate and the electrically-conductive backing plate pass through the housing It is connected with each other.
Optionally, the anchor ring of the conductive contact blade passes through the housing.
Optionally, the spring part includes upper annulus post, inner circle annulated column and the lower annulus post set gradually from top to bottom; Around multiple disc springs for being shaped as circular cone disk like around the inner circle annulated column, and the adjacent disc spring is in opposite direction;Institute Interior annular axis of a cylinder is stated to being arranged with conducting strip in vertical direction;Described conducting strip one end connects the upper annulus post, described to lead The other end of electric piece connects the lower annulus post.
Optionally, the electrically-conductive backing plate and the conductive cover plate are solid cylindrical structural;The conductive cover plate Lower surface is set and the spring part quantity identical groove, and the other end machinery of the groove and the spring part connects Connect;The central coaxial of the electrically-conductive backing plate, the boss, the center of the conductive contact blade with the conductive cover plate.
Optionally, the boss is positioned on the electrically-conductive backing plate;The top of the boss is divided into multiple solid pros Shape structure, and the gap of the adjacent solid square structure is identical;The number of the solid square structure with it is described The quantity of pan structure is identical;The bottom of the boss is divided into solid cylindrical structural, and concentric with the electrically-conductive backing plate.
Optionally, the center of the spring part, the center of the pan structure, the center of the upper molybdenum sheet, the chip Central coaxial with the solid square structure of center, the center, the center of the silver-colored pad of the lower molybdenum sheet.
Optionally, the upper molybdenum sheet, the chip, the lower molybdenum sheet and the silver-colored pad are the length that parameter differs Square laminate structure;The thickness of the silver-colored pad is less than the thickness of the chip;The silver-colored pad is used to work as the silver-colored pad shape During change, alleviate the thermal stress that the chip is subject to;The upper molybdenum sheet and the lower molybdenum sheet are used to protect the chip;The upper molybdenum The thickness of piece and the lower molybdenum sheet is all higher than the thickness of the chip.
According to specific embodiment provided by the invention, the invention discloses following technique effect:
The invention provides a kind of power device for realizing two-side radiation and pressure equilibrium, the power device includes conduction Cover plate, spring part, conductive contact blade, upper molybdenum sheet, chip, lower molybdenum sheet, silver-colored pad, boss and electrically-conductive backing plate;The conductive contact blade Including anchor ring, bottom surface and transition piece;The bottom surface is connected with the anchor ring by the transition piece;The anchor ring position On the bottom surface;The bottom surface of the conductive contact blade is rectangle;The bottom surface is provided with multiple pan structures, and adjacent institute Pan structure is stated to connect by trapezoidal connector;One end of the spring part and the recess of the pan structure mechanically connect, The other end of the spring part is connected with the conductive cover plate;The convex sunken place of the pan structure from top to bottom successively with it is described on Molybdenum sheet, the chip, the lower molybdenum sheet, the silver-colored pad, the boss and electrically-conductive backing plate connection.Therefore, it is of the invention The power device of offer, by setting conductive contact blade that power device is divided into two parts, by the spring division that heat conductivility is very poor Above conductive contact blade, compared to conventional package power device, side can realize the normal work of power device below conductive contact blade Make;The heat sinking function of power device is realized at the upper side of conductive contact blade, avoids the heat dissipation channel by spring part, can be fine Realize two-side radiation in ground;It is simultaneously using the conductive contact blade of said structure, each spring part, chip is separate, when wherein one Individual chip is because when thermal stress suffered by the differences such as structure or thermal expansion becomes big, its corresponding spring part can be by producing upward displacement The stress of chip is reduced, and other chips and spring are unaffected, reduce the pressure differential of the chip and remaining chip stress, change It has been apt to the degree of balance of chip stress.To sum up, power device provided by the invention, can solve the problem that conventional power devices encapsulating structure by In that heat dispersion is bad, power device inside chip bears pressure is uneven and cause power device packaging structure reliability low Problem.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to institute in embodiment The accompanying drawing needed to use is briefly described, it should be apparent that, drawings in the following description are only some implementations of the present invention Example, for those of ordinary skill in the art, without having to pay creative labor, can also be according to these accompanying drawings Obtain other accompanying drawings.
Fig. 1 is the structure front view of power device of the embodiment of the present invention;
Fig. 2 is the structure top view of power device of the embodiment of the present invention;
Fig. 3 is the three-dimensional structure diagram of the conductive contact blade of power device of the embodiment of the present invention;
Fig. 4 is the conductive contact blade of power device of the embodiment of the present invention and the top view of radiating tube;
Fig. 5 is the three-dimensional structure diagram of the spring part of power device of the embodiment of the present invention;
Fig. 6 is the front view of the spring part of power device of the embodiment of the present invention;
Fig. 7 is the top view of the spring part of power device of the embodiment of the present invention;
Fig. 8 is the front view of the conducting strip of the spring part of power device of the embodiment of the present invention;
Fig. 9 is the expanded view of the conducting strip of the spring part of power device of the embodiment of the present invention.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, rather than whole embodiments.It is based on Embodiment in the present invention, those of ordinary skill in the art are obtained every other under the premise of creative work is not made Embodiment, belong to the scope of protection of the invention.
It is an object of the invention to provide a kind of power device for realizing two-side radiation and pressure equilibrium, traditional work(can solve the problem that Rate device encapsulation structure is uneven and cause power device to seal because heat dispersion is bad, power device inside chip bears pressure The problem of assembling structure reliability is low.
In order to facilitate the understanding of the purposes, features and advantages of the present invention, it is below in conjunction with the accompanying drawings and specific real Applying mode, the present invention is further detailed explanation.
Fig. 1 is the structure front view of power device of the embodiment of the present invention, and Fig. 2 is the structure of power device of the embodiment of the present invention Top view.
As shown in Figure 1-2, the power device provided by the invention for realizing two-side radiation and pressure equilibrium is that compression joint type encapsulates Structure, the power device include conductive cover plate 1, spring part 2, conductive contact blade 3, upper molybdenum sheet 4, chip 5, lower molybdenum sheet 6, silver-colored pad 7, Boss and electrically-conductive backing plate 9.
Fig. 3 is the three-dimensional structure diagram of the conductive contact blade of power device of the embodiment of the present invention.
As shown in figure 3, the conductive contact blade 3 includes anchor ring 301, bottom surface 302 and transition piece 303.The bottom surface 302 Connected with the anchor ring 301 by the transition piece 303;The anchor ring 301 is located on the bottom surface 302;It is described to lead The bottom surface 302 of electric contact point 3 is rectangle;The bottom surface 302 is provided with multiple pan structures 3021, and the adjacent pan structure 3021 are connected by trapezoidal connector 3022.
Shaded area shown in Fig. 3 is the setting-out part of conductive contact blade 3;Each parameter of each pan structure 3021 regards power Depending on device architecture.Such as, 6 pan structures are had according to the structure of power device, conductive contact blade 3 provided in an embodiment of the present invention 3021。
Conductive contact blade 3 is used to be used as cushion, provides pooling feature for expanding with heat and contract with cold for the chip 5, protects chip 5 The micro-sensitive structure on surface, improve the uniformity of the work of chip 5.
Preferably, conductive contact blade 3 provided in an embodiment of the present invention is stamped to form by a cylindrical sheets.
The manufacturing process of the structure of conductive contact blade 3 is specific as follows:A cuboid laminate structure is put in horizontal plane first Put, then place a rectangle again below the cuboid laminate structure, its described rectangular length and width is all higher than described The length of cuboid laminate structure and width;The length and width of the cuboid laminate structure it is identical with the ratio of the rectangular length and width and It is parallel respectively;An annulus thin layer is placed above the cuboid laminate structure again, it is coaxial with the cuboid laminate structure; The projection of the annulus thin layer in the horizontal plane can completely include projection of the rectangle in horizontal plane;Finally respectively by upper The annulus thin layer, the outline of the cuboid laminate structure and the rectangle are subjected to thin-walled setting-out successively under, And cut off on cuboid laminate structure, i.e., it is (i.e. recessed that multiple cavities for square are formed on cuboid laminate structure Pool structure 3021), its described square empty top length is more than the length of side of the square empty bottom surface, Ran Hou Thin-walled setting-out forms pan wall (i.e. trapezoidal connector 3022) between two square empty profiles, ultimately forms such as Fig. 3 institutes The conductive contact blade 3 with multiple pan structures shown.The thin-walled setting-out is to generate thin-walled by carrying out transition between profile Feature entity.
With reference to shown in Fig. 1, Fig. 2, Fig. 3, one end of the spring part 2 and the recess machinery of the pan structure 3022 connect Connect, the other end of the spring part 2 is connected with the conductive cover plate 1, the other end and the conduction of specially described spring part 2 The groove connection of cover plate 1.
The convex sunken place of the pan structure 3021 from top to bottom successively with the upper molybdenum sheet 4, the chip 5, the lower molybdenum Piece 6, silver-colored pad 7, the boss and the electrically-conductive backing plate 9 connect.
The electrically-conductive backing plate 9 and the conductive cover plate 1 are solid cylindrical structural;The following table of the conductive cover plate 1 Face is set and the quantity identical of spring part 2, and structure is the groove of cuboid;The groove is another with the spring part 2 One end mechanically connects.The regularity of distribution of the groove is identical with the regularity of distribution of the pan structure.
The electrically-conductive backing plate 9, the boss, the center of the conductive contact blade 3 are same with the center of the conductive cover plate 1 Axle, i.e., when overlooking power device provided by the invention, the center of the electrically-conductive backing plate 9, the center of the boss, the conduction Center superposition of the center of contact 3 with the conductive cover plate 1.
The boss is positioned on the electrically-conductive backing plate 9;The top of the boss is divided into multiple solid square structures 801, and the gap of the adjacent solid square structure 801 is identical;The number of the solid square structure 801 and institute The quantity for stating pan structure 3021 is identical;The bottom of the boss is divided into solid cylindrical structural 802, with the electrically-conductive backing plate 9 is concentric.The solid square structure 801 is symmetrical centered on the center of circle of cylindrical structural 802, the pan The regularity of distribution of structure 3021 is identical with the regularity of distribution of the solid square structure 801.
With reference to shown in Fig. 1, Fig. 2, Fig. 3, in power device provided in an embodiment of the present invention, the solid square structure 801 with the column distribution of two row three on cylindrical structural 802, i.e., described pan structure 3021 and with the column distribution of two row three, institute The groove for stating the lower surface setting of conductive cover plate 1 is also with the column distribution of two row three.
Each solid square that the colelctor electrode of each chip 5 is electrically connected by lower molybdenum sheet 6 and silver-colored pad 7 on boss is tied The upper surface of structure 801, the emitter stage of chip 5 electrically connect the lower surface of conductive contact blade 3 by upper molybdenum sheet 4.
The groove of the conductive cover plate 1, the spring part 2, the pan structure 3021, the upper molybdenum sheet 4, the core Piece 5, the lower molybdenum sheet 6, the silver-colored pad 7, the quantity of the solid square structure 801 are identical.
The center of the groove of the conductive cover plate 1, the center of the spring part 2, the center of the pan structure 3021, institute State the center of molybdenum sheet 4, the center of the chip 5, the center of the lower molybdenum sheet 6, the silver-colored pad 7 center with the reality The central coaxial of the square structure 801 of the heart.When overlooking power device provided by the invention, the groove of the conductive cover plate 1 Center, the center of the spring part 2, the center of the pan structure 3021, the center of the upper molybdenum sheet 4, the chip 5 The center weight of center, the center of the lower molybdenum sheet 6, the center of the silver-colored pad 7 with the solid square structure 801 Close.
The upper molybdenum sheet 4, the chip 5, the lower molybdenum sheet 6 and the silver-colored pad 7 be parameter differ it is solid Rectangle laminate structure.The thickness of the silver-colored pad 7 is less than the thickness of the chip 5.The silver-colored pad 7 is used to work as the silver During 7 deformation of pad, alleviate the thermal stress that the chip 5 is subject to.The upper molybdenum 4 is used to protect the core with the lower molybdenum sheet 6 Piece 5.The thickness of the upper molybdenum sheet 4 and the lower molybdenum sheet 6 is all higher than the thickness of the chip 5.
The power device also includes housing 10;The housing 10 is used to wrap the side of power device provided by the invention Wrap up in;The top edge of the housing 10 is connected with the conductive cover plate 1, and the lower edge of the housing 10 connects with the electrically-conductive backing plate 9 Connect, i.e., described conductive cover plate 1 and the electrically-conductive backing plate 9 are connected with each other by the housing 10.The housing 10 uses rigid material Material is made, internal filled media.
The anchor ring 301 of the conductive contact blade 3 passes through the housing 10.
Fig. 4 is the conductive contact blade of power device of the embodiment of the present invention and the top view of radiating tube, referring to Fig. 4, the power Device also includes radiating tube 11.The radiating tube 11 is arranged on above the trapezoidal connector 302.The heat sinking function of power device Realized by conductive contact blade 3 and radiating tube 11, i.e., described radiating tube 11 is used to reduce the temperature inside the power device.It is described The arrival end and the port of export of radiating tube 11 both pass through the housing 10.
The power device also includes cushion block;The cushion block is solid rectangle structure.The cushion block is led positioned at described Between the anchor ring 301 of electric cover plate 1 and the conductive contact blade 3, and the cushion block is connected with the anchor ring 301;The cushion block During for applying pressure on the surface of conductive cover plate 1, make between anchor ring 301 and the conductive cover plate 1 of the conductive contact blade 3 Gap be present;The gap is that the radiating tube 11 provides entrance and exit.When power device provided by the invention works, When the surface of conductive cover plate 1 applies pressure, the spring part 2 can shrink, the conductive cover plate 1 can decline until with the pad Block contacts so that gap between the anchor ring 301 and the conductive cover plate 1 of the conductive contact blade 3 be present, and then is carried for radiating tube 11 For entrance and exit.
Fig. 5 is the three-dimensional structure diagram of the spring part of power device of the embodiment of the present invention.Fig. 6 is power device of the embodiment of the present invention The front view of the spring part of part.Fig. 7 is the top view of the spring part of power device of the embodiment of the present invention.
As illustrated in figs. 5-7, the spring part 2 includes upper annulus post 201, inner circle annulated column 202, lower annulus post 203, disc spring 204th, conducting strip 205.It is the disc spring 204 of circular cone disk like around multiple shapes around the inner circle annulated column 202, it is adjacent described Disc spring 204 it is in opposite direction.The disc spring 204 and the one disc spring group of coaxially connected composition of inner circle annulated column 202, i.e., some disc spring groups The coaxially connected main part for forming spring part 2.Conducting strip is arranged with the 202 axially vertical direction of inner circle annulated column 205;Described one end of conducting strip 205 connects the upper annulus post 201, and the other end of the conducting strip 205 connects the lower annulus Post 203.Two conducting strips 205, which are staggered coaxially to be connected, forms conductive sheet set.Some disc spring groups are coaxially connected with inner circle annulated column 202 And be coaxially placed in inside conductive sheet set, contacted with the inner surface of conducting strip 205.The bending line of conducting strip 205 can be with conductive contact blade 3 The length of indent pool structure 3031 is parallel, also can be wide parallel with the indent pool structure 3031 of conductive contact blade 3.The side of adjacent springs part 2 To difference.
Spring part 2 can be further that the offer of expanding with heat and contract with cold of the chip 5 in power device provided by the invention is slow Rush function.
Fig. 8 is the front view of the conducting strip of the spring part of power device of the embodiment of the present invention;Fig. 9 is work(of the embodiment of the present invention The expanded view of the conducting strip of the spring part of rate device.As Figure 8-9, the conducting strip 205 is fold-line-shaped structure;The conduction Piece 205 includes two identical ends and a pars intermedia 2501;Two identical ends are respectively first end 2502 and Two ends 2503;The pars intermedia 2501 is connected with first end 2502, the second end 2503 respectively;The pars intermedia 2501 wraps Include two rectangular configurations, and the angled connection of the two rectangular configurations;The first end 2502, the second end 2503 are equal Centered on be circular hollow portal structures;The center for circular hollow portal structures be used for by the upper annulus post 201, Lower annulus post 203 is enclosed in the circular hollow, the connection of annulus post 201, lower annulus post 203 in realization.
The manufacturing process of the structure of conducting strip 205 is as follows:First by one wide and inner circle annulated column 202 overall diameter identical Cuboid, α degree is bent into along the straight line L at rectangular center wide parallel with cuboid and by cuboid surface, Then along parallel with straight line L and same distance (half for being less than cuboid length) apart two inside bendings of straight line (180- α) spends, and is finally cut off in cuboid end, is formed centered on end as the portal structures of circular hollow, ultimately form as The conducting strip of fold-line-shaped structure shown in Fig. 8.
Compared with prior art, power device provided in an embodiment of the present invention has the beneficial effect that:
1st, power device is encapsulated compared to traditional IGBT, power device packaging structure of the invention is between chip and spring part Using conductive contact blade, the pan structure floor and upper molybdenum sheet of conductive contact blade are in contact, the recess of the pan structure of conductive contact blade Mechanically connected with spring part.When one of power chip becomes big due to thermal stress suffered by the differences such as structure or thermal expansion, its Corresponding pan structure can reduce the stress of chip with spring part by producing upward displacement, while recessed corresponding to other chips Pool structure is unaffected with spring part, reduces the pressure differential of chip and remaining chip stress, improves the balance of chip stress Degree, improve the reliability of power device packaging structure.
2nd, conductive contact blade is introduced in the present invention and power device packaging structure is divided into two parts, by the bullet that heat conductivility is very poor Spring part separates in the top of conductive contact layer, and so, side can realize the normal work of power device below conductive contact layer;Pass through Heat abstractor is placed on conductive contact blade surface, conductive contact blade and heat abstractor are then responsible for realizing the heat sinking function of power device, kept away Exempt to be radiated by the heat dissipation channel of spring part, the two-side radiation of power device can be realized well.
Summarize:Power device packaging structure provided by the invention, while solve conventional power devices due to heat dispersion Bad, chip bears pressure uneven the problem of causing reliability low.
In addition, it is necessary to illustrate some:
1st, the method that heat sinking function is realized on conductive contact blade is not arrangement that is unique, being proposed except the embodiment of the present invention Outside radiating tube, space that can also be directly between conductive contact blade and conductive cover plate is passed through heat eliminating medium realization radiating.
2nd, conductive contact blade can be replaced with other structures.The structure of replacement can be by the upper molybdenum sheet of power device and following portion Point, the part of spring part and the above separate, replacing structure can form a closed sky with each upper molybdenum sheet and following part Between.Replacing structure is in contact with each upper molybdenum sheet and spring part, and contact portion can produce upward when chip produces thermal expansion Displacement, while remaining contact portion is unaffected.
3rd, spring part can be replaced with other structures.Replacing structure is in contact with conductive contact blade and conductive cover plate respectively, replaces It is collapsible in chip thermal expansion to change structure, elastic deformation is produced, with reference to the elastic limit of spring part and the quantity of coefficient of elasticity Level.
Each embodiment is described by the way of progressive in this specification, what each embodiment stressed be and other The difference of embodiment, between each embodiment identical similar portion mutually referring to.
Specific case used herein is set forth to the principle and embodiment of the present invention, and above example is said It is bright to be only intended to help the method and its core concept for understanding the present invention;Meanwhile for those of ordinary skill in the art, foundation The thought of the present invention, in specific embodiments and applications there will be changes.In summary, this specification content is not It is interpreted as limitation of the present invention.

Claims (10)

1. a kind of power device for realizing two-side radiation and pressure equilibrium, the power device is crimping type packaging structure, and it is special Sign is, the power device includes conductive cover plate, spring part, conductive contact blade, upper molybdenum sheet, chip, lower molybdenum sheet, silver-colored pad, convex Platform and electrically-conductive backing plate;
The conductive contact blade includes anchor ring, bottom surface and transition piece;The bottom surface and the anchor ring pass through the transition piece Connection;The anchor ring is located on the bottom surface;The bottom surface of the conductive contact blade is rectangle;The bottom surface is provided with multiple recessed Pool structure, and the adjacent pan structure is connected by trapezoidal connector;
One end of the spring part and the recess of the pan structure are mechanically connected, and the other end of the spring part is led with described Electric cover plate connection;
Padded successively with the upper molybdenum sheet, the chip, the lower molybdenum sheet, the silver from top to bottom at the convex sunken place of the pan structure Piece, the boss and electrically-conductive backing plate connection.
2. power device according to claim 1, it is characterised in that the power device also includes radiating tube;It is described to dissipate Heat pipe is arranged on the trapezoidal connector;The radiating tube is used to reduce the temperature inside the power device.
3. power device according to claim 2, it is characterised in that the power device also includes cushion block;The cushion block For solid rectangle structure;The cushion block between the conductive cover plate and the anchor ring of the conductive contact blade, and with institute State anchor ring connection;When the cushion block is used to apply pressure on the conductive cover plate surface, make the anchor ring of the conductive contact blade Gap be present between the conductive cover plate;The gap provides entrance and exit for the radiating tube.
4. power device according to claim 1, it is characterised in that the power device also includes housing;The conduction Cover plate and the electrically-conductive backing plate are connected with each other by the housing.
5. power device according to claim 4, it is characterised in that the anchor ring of the conductive contact blade passes through the shell Body.
6. power device according to claim 1, it is characterised in that the spring part includes what is set gradually from top to bottom Upper annulus post, inner circle annulated column and lower annulus post;Around multiple disc springs for being shaped as circular cone disk like around the inner circle annulated column, And the adjacent disc spring is in opposite direction;In the interior annular axis of a cylinder to being arranged with conducting strip in vertical direction;The conduction Piece one end connects the upper annulus post, and the other end of the conducting strip connects the lower annulus post.
7. power device according to claim 1, it is characterised in that the electrically-conductive backing plate and the conductive cover plate are reality The cylindrical structural of the heart;The lower surface of the conductive cover plate is set and the spring part quantity identical groove, and the groove Mechanically connected with the other end of the spring part;The electrically-conductive backing plate, the boss, the conductive contact blade center with The central coaxial of the conductive cover plate.
8. power device according to claim 1, it is characterised in that the boss is positioned on the electrically-conductive backing plate;Institute The top for stating boss is divided into multiple solid square structures, and the gap of the adjacent solid square structure is identical;Institute The number for stating solid square structure is identical with the quantity of the pan structure;The bottom of the boss is divided into solid cylinder Shape structure, and it is concentric with the electrically-conductive backing plate.
9. power device according to claim 8, it is characterised in that the center of the spring part, the pan structure Center, the center of the upper molybdenum sheet, the center of the chip, the center of the lower molybdenum sheet, the silver-colored pad center and institute State the central coaxial of solid square structure.
10. power device according to claim 1, it is characterised in that the upper molybdenum sheet, the chip, the lower molybdenum sheet And the silver-colored pad is the rectangle laminate structure that parameter differs;The thickness of the silver-colored pad is less than the thickness of the chip Degree;The silver-colored pad is used for when the silver-colored pad deformation, alleviates the thermal stress that the chip is subject to;The upper molybdenum sheet and described Lower molybdenum sheet is used to protect the chip;The thickness of the upper molybdenum sheet and the lower molybdenum sheet is all higher than the thickness of the chip.
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CN108428677A (en) * 2018-03-16 2018-08-21 全球能源互联网研究院有限公司 A kind of crimp type IGBT elasticity press mounting structure and crimp type IGBT encapsulating structures
CN108598066A (en) * 2018-04-19 2018-09-28 如皋市大昌电子有限公司 A kind of highly reliable glassivation high voltage silicon rectifier stack and its manufacturing method
CN109671686A (en) * 2019-01-29 2019-04-23 华北电力大学 A kind of encapsulating structure of crimp type IGBT
CN111653530A (en) * 2019-03-04 2020-09-11 上海旭禾汽车电子科技有限公司 Electric-drive double-side-radiating IGBT power module radiating device
CN112466868A (en) * 2020-11-27 2021-03-09 北京新能源汽车技术创新中心有限公司 Chip packaging structure and vehicle
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CN112992795A (en) * 2019-12-17 2021-06-18 株洲中车时代半导体有限公司 Crimping type IGBT sub-module structure and crimping type IGBT device
CN113053831A (en) * 2019-12-27 2021-06-29 株洲中车时代半导体有限公司 Crimping type IGBT module and power semiconductor device
CN113725179A (en) * 2021-07-27 2021-11-30 南瑞联研半导体有限责任公司 Elastic submodule group and modularized crimping type semiconductor module
CN113834527A (en) * 2021-09-18 2021-12-24 重庆大学 Crimping type power semiconductor structure and internal pressure online measurement method thereof
CN113838810A (en) * 2020-06-24 2021-12-24 深圳第三代半导体研究院 Crimping type power module and packaging method thereof
WO2022033547A1 (en) * 2020-08-12 2022-02-17 Lite-On Semiconductor Corporation Double side cooling power package
CN117238901A (en) * 2023-11-16 2023-12-15 西安西电电力系统有限公司 Crimping IGBT structure and power assembly

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CN108428677A (en) * 2018-03-16 2018-08-21 全球能源互联网研究院有限公司 A kind of crimp type IGBT elasticity press mounting structure and crimp type IGBT encapsulating structures
CN108428677B (en) * 2018-03-16 2020-09-11 全球能源互联网研究院有限公司 Crimping type IGBT elastic press mounting structure and crimping type IGBT packaging structure
CN108598066A (en) * 2018-04-19 2018-09-28 如皋市大昌电子有限公司 A kind of highly reliable glassivation high voltage silicon rectifier stack and its manufacturing method
CN108598066B (en) * 2018-04-19 2019-11-19 如皋市大昌电子有限公司 A kind of highly reliable glassivation high voltage silicon rectifier stack and its manufacturing method
CN109671686A (en) * 2019-01-29 2019-04-23 华北电力大学 A kind of encapsulating structure of crimp type IGBT
CN109671686B (en) * 2019-01-29 2024-05-10 华北电力大学 Packaging structure of crimping IGBT
CN111653530A (en) * 2019-03-04 2020-09-11 上海旭禾汽车电子科技有限公司 Electric-drive double-side-radiating IGBT power module radiating device
WO2021056603A1 (en) * 2019-09-29 2021-04-01 全球能源互联网研究院有限公司 Power type semiconductor device packaging structure
CN112992795A (en) * 2019-12-17 2021-06-18 株洲中车时代半导体有限公司 Crimping type IGBT sub-module structure and crimping type IGBT device
CN112992795B (en) * 2019-12-17 2024-04-19 株洲中车时代半导体有限公司 Crimping type IGBT sub-module structure and crimping type IGBT device
CN113053831A (en) * 2019-12-27 2021-06-29 株洲中车时代半导体有限公司 Crimping type IGBT module and power semiconductor device
CN113053831B (en) * 2019-12-27 2023-09-05 株洲中车时代半导体有限公司 Crimping IGBT module and power semiconductor device
CN113838810A (en) * 2020-06-24 2021-12-24 深圳第三代半导体研究院 Crimping type power module and packaging method thereof
WO2022033547A1 (en) * 2020-08-12 2022-02-17 Lite-On Semiconductor Corporation Double side cooling power package
CN112466868A (en) * 2020-11-27 2021-03-09 北京新能源汽车技术创新中心有限公司 Chip packaging structure and vehicle
CN113725179A (en) * 2021-07-27 2021-11-30 南瑞联研半导体有限责任公司 Elastic submodule group and modularized crimping type semiconductor module
CN113834527A (en) * 2021-09-18 2021-12-24 重庆大学 Crimping type power semiconductor structure and internal pressure online measurement method thereof
CN117238901A (en) * 2023-11-16 2023-12-15 西安西电电力系统有限公司 Crimping IGBT structure and power assembly
CN117238901B (en) * 2023-11-16 2024-03-08 西安西电电力系统有限公司 Crimping IGBT structure and power assembly

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