CN107743033A - A kind of IGBT press mounting structures - Google Patents
A kind of IGBT press mounting structures Download PDFInfo
- Publication number
- CN107743033A CN107743033A CN201710853805.4A CN201710853805A CN107743033A CN 107743033 A CN107743033 A CN 107743033A CN 201710853805 A CN201710853805 A CN 201710853805A CN 107743033 A CN107743033 A CN 107743033A
- Authority
- CN
- China
- Prior art keywords
- heat sink
- igbt
- mounting structures
- absorption capacitance
- press mounting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010521 absorption reaction Methods 0.000 claims abstract description 51
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 3
- 239000005864 Sulphur Substances 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 239000011572 manganese Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 230000003139 buffering effect Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/08112—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in bipolar transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/08116—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in composite switches
Landscapes
- Rectifiers (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention provides a kind of IGBT press mounting structures,Provided with the first pressing plate,First heat sink,Second heat sink,3rd heat sink,Second pressing plate,Absorption Capacitance and stack bus bar,First pressing plate therein,First heat sink,Second heat sink,3rd heat sink and the second pressing plate are arranged in order from bottom to up,And fixed by being pressed screw rod,It is pressed IGBT module between first heat sink and the second heat sink,Press-fit diode D1 between second heat sink and the 3rd heat sink,Absorption Capacitance connects the first heat sink and the 3rd heat sink by stack bus bar,IGBT and diode D1 are press fit together,Reduce the lead-in inductance between IGBT and diode D1,Reduce press fitting volume simultaneously,Coincidence circuit area is also minimized,Absorption circuit absorption strengthens,So that voltage stress when IGBT is turned off is also minimum,IGBT is hardly damaged,The global reliability of IGBT press mounting structures is high.
Description
Technical field
The present invention relates to electric and electronic technical field, and in particular to a kind of IGBT press mounting structures.
Background technology
The appearance of IGCT brings flourishing for direct current industry, from the last century 90's because insulated gate bipolar is brilliant
Body pipe IGBT (Isolated Gate Bipolar Transistor) appearance, when power electronics industry enters full-controlled device
Generation.In power system, full-controlled device by more and more extensive application, the demand of High voltage power device test equipment also with day
It is all to increase, important developing direction of the IGBT due to the advantage such as two-side radiation and failure short circuit, having become high power device.
When IGBT applies as high current high-voltage switch pipe, it is necessary to using the appropriate press fitting side similar to controllable silicon
Formula, very high switch overvoltage can be produced during Simultaneous Switching, it is necessary to using RCD absorbing circuits.It is but of the prior art
The design of IGBT press mounting structures is unreasonable, causes loop elongated, and stray inductance becomes big, and voltage stress increases during shut-off, or outward appearance
It can not meet.IGBT electrical structures of the prior art are as shown in figure 1, the IGBT electrical structures include IGBT module, diode
D1, the buffer resistance R and Absorption Capacitance C in parallel with diode D1, IGBT module include IGBT and with IGBT antiparallel two
Pole pipe D2, L1, L2 and L3 are stray inductance.Because the appearance and size of press fitting is bigger, the IGBT electrical structures shown in Fig. 1
The electrical connection loop length that may result between diode D1 and IGBT is greatly increased, and coincidence circuit area is consequently increased,
Stray inductance L1, L2 and L3 are also increased therewith.Therefore understand that the absorption of electrical structure reduces, also cause when the IGBT is turned off
Voltage stress increases, and probability of damage increases.
The content of the invention
In order to solve the problems, such as that above-mentioned prior art IGBT is fragile, reliability is low, the present invention provides a kind of IGBT press fittings
Structure, mainly include the first pressing plate, the first heat sink, the second heat sink, the 3rd heat sink, the second pressing plate, Absorption Capacitance
And stack bus bar；First pressing plate, the first heat sink, the second heat sink, the 3rd heat sink and the second pressing plate from bottom to up according to
Secondary arrangement, and being fixed by being pressed screw rod, is pressed IGBT module between the first heat sink and the second heat sink, the second heat sink with
Press-fit diode D1 between 3rd heat sink, Absorption Capacitance connect the first heat sink and the 3rd heat sink by stack bus bar, most
Voltage stress during IGBT shut-offs is caused to reduce eventually, IGBT is hardly damaged, and the global reliability of IGBT press mounting structures is high.
In order to realize foregoing invention purpose, the present invention adopts the following technical scheme that：
The present invention provides a kind of IGBT press mounting structures, including the first pressing plate, the first heat sink, the second heat sink, the 3rd
Heat sink, the second pressing plate, Absorption Capacitance and stack bus bar；
First pressing plate, the first heat sink, the second heat sink, the 3rd heat sink and the second pressing plate from bottom to up according to
Secondary arrangement, and being fixed by being pressed screw rod, is pressed IGBT module between first heat sink and the second heat sink, and described second
Press-fit diode D1 between heat sink and the 3rd heat sink, the Absorption Capacitance connect the first heat sink and the by stack bus bar
Three heat sinks.
The Absorption Capacitance includes Absorption Capacitance C1 and Absorption Capacitance C2；
The positive terminal of the side of stack bus bar first connects the 3rd heat sink, the radiating of negative pole end connection first of its first side
Plate；
The positive terminal connection Absorption Capacitance C1 positive pole and Absorption Capacitance C2 positive pole of the side of stack bus bar second, it the
The negative pole end connection Absorption Capacitance C1 negative pole and Absorption Capacitance C2 negative pole of two sides.
The capacitance of the Absorption Capacitance C1 and Absorption Capacitance C2 are equal.
It is in parallel with diode D1 that the IGBT press mounting structures also include buffer resistance R, the buffer resistance R.
The IGBT module include IGBT and with the antiparallel diode D2 of IGBT；
Colelctor electrode the second heat sink of direction of the IGBT, its emitter stage the first heat sink of direction；
Anode the second heat sink of direction of the diode D1, its negative electrode the 3rd heat sink of direction.
Between first heat sink and IGBT, between the IGBT and the second heat sink, second heat sink and two
Fixed between pole pipe D1 and between the diode D1 and the 3rd heat sink by alignment pin.
First heat sink, the second heat sink and the 3rd heat sink use aluminum plate.
The material of first pressing plate and the second pressing plate uses the component for including following weight percentage meter to be prepared
Alloy：
Carbon is 015%, silicon 0.20%, manganese 0.45%, phosphorus 0.035%, sulphur 0.025%, surplus are iron.
Compared with immediate prior art, technical scheme provided by the invention has the advantages that：
IGBT press mounting structures provided by the invention are provided with the first pressing plate, the first heat sink, the second heat sink, the 3rd radiating
Plate, the second pressing plate, Absorption Capacitance and stack bus bar, the first pressing plate therein, the first heat sink, the second heat sink, the 3rd
Heat sink and the second pressing plate are arranged in order from bottom to up, and are fixed by being pressed screw rod, the first heat sink and the second heat sink
Between be pressed IGBT module, press-fit diode D1 between the second heat sink and the 3rd heat sink, Absorption Capacitance passes through stack bus bar
Connect the first heat sink and the 3rd heat sink, IGBT and diode D1 be press fit together, reduce IGBT and diode D1 it
Between lead-in inductance, while reduce press fitting volume；
Electrical connection loop length between IGBT press mounting structures diode D1 provided by the invention and IGBT module is reduced to
Most short, coincidence circuit area is also minimized, absorption circuit absorption enhancing so that voltage stress when IGBT is turned off is also most
Small, IGBT is hardly damaged, and the global reliability of IGBT press mounting structures is high.
Brief description of the drawings
Fig. 1 is IGBT electrical structure diagrams in the prior art；
Fig. 2 is IGBT electrical structure diagrams in the embodiment of the present invention；
Fig. 3 is IGBT press mounting structures figure in the embodiment of the present invention；
Wherein, the pressing plates of 1- first, the heat sinks of 2- first, the heat sinks of 3- second, the heat sinks of 4- the 3rd, 5- second are pressed
Plate, 6- press fitting screw rods, 7- diodes D1,8-IGBT module, 9- stack bus bars, 10- Absorption Capacitances C1,11- Absorption Capacitance C2.
Embodiment
The present invention is described in further detail below in conjunction with the accompanying drawings.
IGBT electrical structures corresponding to IGBT press mounting structures provided in an embodiment of the present invention are as shown in Fig. 2 the IGBT is electric
Structure, which includes IGBT module, diode D1, the buffer resistance R in parallel with diode D1 and Absorption Capacitance C, IGBT module, to be included
IGBT and be stray inductance with IGBT antiparallel diode D2, L2 and L3.IGBT electrical structures shown in Fig. 2 can incite somebody to action
The voltage at IGBT both ends vises, and avoids damaging IGBT during work.
As shown in figure 3,7 in Fig. 3 represent diode D1,10 represent to inhale IGBT press mounting structures provided in an embodiment of the present invention
Electric capacity C1 is received, 11 represent Absorption Capacitance C2, and the IGBT press mounting structures mainly include the first pressing plate 1, the first heat sink 2, second
Heat sink 3, the 3rd heat sink 4, the second pressing plate 5, Absorption Capacitance and stack bus bar 9；
Above-mentioned the first pressing plate 1, the first heat sink 2, the second heat sink 3, the 3rd heat sink 4 and the second pressing plate 5 from
Under it is supreme be arranged in order, and fixed by being pressed screw rod 6；It is pressed IGBT between above-mentioned the first heat sink 2 and the second heat sink 3
Module 8, press-fit diode D1 between the second heat sink 3 and the 3rd heat sink 4, Absorption Capacitance connect first by stack bus bar 9
The heat sink 4 of heat sink 2 and the 3rd.
Above-mentioned Absorption Capacitance includes the equal Absorption Capacitance C1 and Absorption Capacitance C2 of capacitance；
Wherein the positive terminal of the side of stack bus bar 9 first connects the 3rd heat sink 4, and the negative pole end connection first of its first side dissipates
Hot plate 2；
And the positive terminal connection Absorption Capacitance C1 positive pole and Absorption Capacitance C2 positive pole of the above-mentioned side of stack bus bar 9 second,
The negative pole end connection Absorption Capacitance C1 negative pole and Absorption Capacitance C2 negative pole (i.e. Absorption Capacitance C1 and Absorption Capacitance of its second side
C2 is in parallel, equivalent to the Absorption Capacitance C in Fig. 2 after parallel connection).
IGBT press mounting structures provided in an embodiment of the present invention are except the first above-mentioned pressing plate 1, the first heat sink 2, second
Outside heat sink 3, the 3rd heat sink 4, the second pressing plate 5, Absorption Capacitance, stack bus bar 9, IGBT module 8 and diode D1, also
Including buffer resistance R, buffer resistance R is in parallel with diode D1.
Above-mentioned IGBT module 8 include IGBT and with the antiparallel diode D2 of IGBT；
IGBT is consistent with diode D1 direction in Fig. 3, is specially：
IGBT colelctor electrode the second heat sink 3 of direction, its emitter stage the first heat sink 2 of direction；
Diode D1 anode the second heat sink 3 of direction, its negative electrode the 3rd heat sink 4 of direction.
Between above-mentioned first heat sink 2 and IGBT, between IGBT and the second heat sink 3, the second heat sink 3 and diode D1
Between and diode D1 and the 3rd heat sink 4 between fixed by alignment pin.
And first heat sink 2, the second heat sink 3 and the 3rd heat sink 4 use aluminum plate, thermal conductivity is preferable.
The material of first pressing plate 1 and the second pressing plate, which uses, includes the conjunction that the component of following weight percentage meter is prepared
Gold：
Carbon is 015%, silicon 0.20%, manganese 0.45%, phosphorus 0.035%, sulphur 0.025%, surplus are iron.
First pressing plate 1 and the second pressing plate use alloy prepared by mentioned component, are advantageous in that hardness is larger, have stronger
Pressure-resistant performance.
Finally it should be noted that：The above embodiments are merely illustrative of the technical scheme of the present invention and are not intended to be limiting thereof, institute
The those of ordinary skill in category field with reference to above-described embodiment still can to the present invention embodiment modify or
Equivalent substitution, these are applying for this pending hair without departing from any modification of spirit and scope of the invention or equivalent substitution
Within bright claims.
Claims (9)
1. a kind of IGBT press mounting structures, its characteristic curve are, including the first pressing plate, the first heat sink, the second heat sink, the 3rd
Heat sink, the second pressing plate, Absorption Capacitance and stack bus bar；
First pressing plate, the first heat sink, the second heat sink, the 3rd heat sink and the second pressing plate are arranged successively from bottom to up
Row, and fixed by being pressed screw rod, IGBT module, second radiating are pressed between first heat sink and the second heat sink
Press-fit diode D1 between plate and the 3rd heat sink, the Absorption Capacitance connect the first heat sink and the 3rd by stack bus bar and dissipated
Hot plate.
2. IGBT press mounting structures according to claim 1, its characteristic curve are, the Absorption Capacitance includes Absorption Capacitance C1
With Absorption Capacitance C2；
The positive terminal of the side of stack bus bar first connects the 3rd heat sink, and the negative pole end of its first side connects the first heat sink；
The positive terminal connection Absorption Capacitance C1 positive pole and Absorption Capacitance C2 positive pole of the side of stack bus bar second, its second side
Negative pole end connection Absorption Capacitance C1 negative pole and Absorption Capacitance C2 negative pole.
3. IGBT press mounting structures according to claim 2, its characteristic curve are, the Absorption Capacitance C1 and Absorption Capacitance C2
Capacitance it is equal.
4. IGBT press mounting structures according to claim 1, its characteristic curve are, the IGBT press mounting structures also include buffering
Resistance R, the buffer resistance R is in parallel with diode D1.
5. IGBT press mounting structures according to claim 1, its characteristic curve are, the IGBT module include IGBT and with
The antiparallel diode D2 of IGBT；
Colelctor electrode the second heat sink of direction of the IGBT, its emitter stage the first heat sink of direction.
6. IGBT press mounting structures according to claim 1, its characteristic curve are, the anode direction second of the diode D1
Heat sink, its negative electrode the 3rd heat sink of direction.
7. IGBT press mounting structures according to claim 1, its characteristic curve are, between first heat sink and IGBT,
Between the IGBT and the second heat sink, between second heat sink and diode D1 and the diode D1 and the 3rd dissipate
Fixed between hot plate by alignment pin.
8. IGBT press mounting structures according to claim 1, its characteristic curve are, first heat sink, the second heat sink
Aluminum plate is used with the 3rd heat sink.
9. IGBT press mounting structures according to claim 1, its characteristic curve are, first pressing plate and the second pressing plate
Material, which uses, includes the alloy that the component of following weight percentage meter is prepared：
Carbon is 015%, silicon 0.20%, manganese 0.45%, phosphorus 0.035%, sulphur 0.025%, surplus are iron.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710853805.4A CN107743033B (en) | 2017-09-20 | 2017-09-20 | IGBT press-fitting structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710853805.4A CN107743033B (en) | 2017-09-20 | 2017-09-20 | IGBT press-fitting structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107743033A true CN107743033A (en) | 2018-02-27 |
| CN107743033B CN107743033B (en) | 2023-12-19 |
Family
ID=61235843
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710853805.4A Active CN107743033B (en) | 2017-09-20 | 2017-09-20 | IGBT press-fitting structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107743033B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108933536A (en) * | 2018-07-24 | 2018-12-04 | 全球能源互联网研究院有限公司 | A kind of diode full-bridge twin-stage submodule for breaker |
| CN111473884A (en) * | 2020-05-08 | 2020-07-31 | 许春生 | Shock attenuation type thermistor that stabilizes |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1093085A (en) * | 1996-09-19 | 1998-04-10 | Hitachi Ltd | Package of semiconductor device and power converter using it |
| CN101819970A (en) * | 2010-04-08 | 2010-09-01 | 中国电力科学研究院 | Welded IGBT and solderless diode-based series structure module |
| CN102857078A (en) * | 2012-01-05 | 2013-01-02 | 中国电力科学研究院 | Convertor unit based on welding type insulated gate bipolar transistor (IGBT) and pressure welding type diode antiparallel structure |
| CN202713187U (en) * | 2012-08-30 | 2013-01-30 | 重庆胤辰焊接设备有限责任公司 | Heat radiation mounting structure of IGBT full-bridge inverter module of inverter electric welder |
| CN203590070U (en) * | 2013-11-26 | 2014-05-07 | 上海联星电子有限公司 | IGBT buffering adsorption circuit |
| CN105337596A (en) * | 2014-06-27 | 2016-02-17 | 西门子公司 | Motor system IGBT switching circuit thereof |
| CN205691725U (en) * | 2016-06-08 | 2016-11-16 | 无锡同方微电子有限公司 | A kind of integral gate turn-off thyristor testboard |
-
2017
- 2017-09-20 CN CN201710853805.4A patent/CN107743033B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1093085A (en) * | 1996-09-19 | 1998-04-10 | Hitachi Ltd | Package of semiconductor device and power converter using it |
| CN101819970A (en) * | 2010-04-08 | 2010-09-01 | 中国电力科学研究院 | Welded IGBT and solderless diode-based series structure module |
| CN102857078A (en) * | 2012-01-05 | 2013-01-02 | 中国电力科学研究院 | Convertor unit based on welding type insulated gate bipolar transistor (IGBT) and pressure welding type diode antiparallel structure |
| CN202713187U (en) * | 2012-08-30 | 2013-01-30 | 重庆胤辰焊接设备有限责任公司 | Heat radiation mounting structure of IGBT full-bridge inverter module of inverter electric welder |
| CN203590070U (en) * | 2013-11-26 | 2014-05-07 | 上海联星电子有限公司 | IGBT buffering adsorption circuit |
| CN105337596A (en) * | 2014-06-27 | 2016-02-17 | 西门子公司 | Motor system IGBT switching circuit thereof |
| CN205691725U (en) * | 2016-06-08 | 2016-11-16 | 无锡同方微电子有限公司 | A kind of integral gate turn-off thyristor testboard |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108933536A (en) * | 2018-07-24 | 2018-12-04 | 全球能源互联网研究院有限公司 | A kind of diode full-bridge twin-stage submodule for breaker |
| CN111473884A (en) * | 2020-05-08 | 2020-07-31 | 许春生 | Shock attenuation type thermistor that stabilizes |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107743033B (en) | 2023-12-19 |
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