CN203537221U - MOS transistor protection circuit of switch power supply under high input voltage - Google Patents
MOS transistor protection circuit of switch power supply under high input voltage Download PDFInfo
- Publication number
- CN203537221U CN203537221U CN201320708295.9U CN201320708295U CN203537221U CN 203537221 U CN203537221 U CN 203537221U CN 201320708295 U CN201320708295 U CN 201320708295U CN 203537221 U CN203537221 U CN 203537221U
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- China
- Prior art keywords
- power supply
- mos transistor
- switch power
- input voltage
- oxide
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Abstract
The utility model relates to an MOS transistor protection circuit of a switch power supply under a high input voltage. The structure of the utility model is that the two ends of an MOS transistor of the switch power supply are in parallel connection with a clamping circuit, and a bleeder circuit is in series connection between the MOS transistor of the switch power supply and a transformer. The MOS transistor protection circuit of the switch power supply under the high input voltage of the utility model solves the defects existed in the past that the withstand voltage of the MOS transistor in the switch power supply only has hundreds of volts, so that the application of the MOS transistor at the high voltage occasions is limited. The MOS transistor protection circuit of the switch power supply under the high input voltage of the utility model effectively protects the MOS transistor of the switch power supply, so that the switch power supply can work at the high voltage occasions. The protection circuit is simple and reliable, namely, the drain-source two ends of the MOS transistor of the switch power supply are in parallel connection with transient suppression diodes to form the clamping circuit, so that the voltages at the drain-source two ends of the MOS transistor are clamped within a safe range, and accordingly, the MOS transistor of the switch power supply is not broken down and damaged when the input voltage reaches 1000V. Moreover, another one MOS transistor is in series connection between the MOS transistor and the transformer to form the bleeder circuit to bear the residual voltage, so that the two series-connection MOS transistors can bear a higher voltage, and the demands at the high voltage occasions are satisfied.
Description
Technical field
The utility model relates to the metal-oxide-semiconductor protective circuit in Switching Power Supply, particularly the Switching Power Supply metal-oxide-semiconductor protective circuit under a kind of high input voltage.
Background technology
At present, Switching Power Supply, with small-sized, light weight and high efficiency feature nearly all electronic equipment that is widely used, is the indispensable a kind of power mode of current electronics and information industry develop rapidly.
Before the present utility model, metal-oxide-semiconductor in Switching Power Supply is withstand voltage generally only has several hectovolts, its application in high pressure occasion (input voltage reaches 1000V) is restricted, and high pressure applications often can run into.
Particularly, as shown in Figure 1:
When the inner metal-oxide-semiconductor of switching power source chip U1 turn-offs, the former limit of transformer T1 produces reverse voltage U
d, T14 pin voltage is higher than 2 pin voltages, and the clamp circuit being comprised of fast-recovery commutation diode D2 and Transient Suppression Diode D1 is by this reverse voltage U
dclamper is at 200V, and now the inner metal-oxide-semiconductor drain-source voltage of U1 is U
ds=U
d+ U
in(input voltage); Due to the maximum voltage U bearing between the inner metal-oxide-semiconductor drain-source of U1
ds_maxfor 700V, so input voltage U
in≤ U
ds_max-U
d=700-200=500V.So this electricity U
droad can not be in the lower work of high pressure occasion (input voltage reaches 1000V).
Summary of the invention
The purpose of this utility model is just to overcome above-mentioned defect, develops the Switching Power Supply metal-oxide-semiconductor protective circuit under a kind of high input voltage.
The technical solution of the utility model is:
A Switching Power Supply metal-oxide-semiconductor protective circuit under high input voltage, its technical characteristics is Switching Power Supply metal-oxide-semiconductor two ends clamp circuit in parallel, the bleeder circuit of connecting between Switching Power Supply metal-oxide-semiconductor and transformer.
Described clamp circuit is comprised of Transient Suppression Diode.
Described bleeder circuit is comprised of MOS and drive circuit thereof, and drive circuit is comprised of voltage-stabiliser tube and resistance.
Advantage of the present utility model and effect are effectively to have protected the metal-oxide-semiconductor of Switching Power Supply, make Switching Power Supply be able to work in high pressure occasion (input voltage reaches 1000V), protective circuit is simple and reliable, at the metal-oxide-semiconductor drain-source two ends of Switching Power Supply Transient Suppression Diode in parallel, form clamp circuit, by metal-oxide-semiconductor drain-source both end voltage clamper within safe range, thereby the metal-oxide-semiconductor that has guaranteed Switching Power Supply can breakdownly not damage when high pressure occasion (input voltage reaches 1000V), has realized the protection to metal-oxide-semiconductor; The metal-oxide-semiconductor of simultaneously connecting between metal-oxide-semiconductor and transformer, forms bleeder circuit, bears residual voltage.Such two metal-oxide-semiconductors series connection, can bear higher voltage, meets the demand of high pressure occasion (input voltage reaches 1000V).
Other concrete advantages of the utility model and effect will go on to say below.
Accompanying drawing explanation
Anti exciting converter circuit diagram before Fig. 1---the present utility model.
Fig. 2---the utility model circuit diagram.
In figure, each label represents that corresponding component names model is as follows:
D1 is Transient Suppression Diode P6KE200, D2 is fast-recovery commutation diode FR107, T1 is high frequency transformer, U1 is switching power source chip TNY274, D4, D5 are Transient Suppression Diode P6KE300, Q1 is metal-oxide-semiconductor IPA90R1KOC3, and D6 is voltage-stabiliser tube MMSZ4698, and R7～R11 is Chip-R 1M Ω.
Embodiment
As shown in Figure 2:
In parallel with metal-oxide-semiconductor Q1 and the voltage-stabiliser tube D6 of switching power source chip U1 inside after Transient Suppression Diode D4, D5 series connection, wherein D5 anode meets 5～8 pin GNDP of U1, the negative electrode of D4 connects the negative electrode of D6, the drain electrode that the anode of D6 connects the inner metal-oxide-semiconductor of U1 is 4 pin of chip, the anode and cathode of D6 is also joined with the gate-source of metal-oxide-semiconductor Q1 respectively, and the grid of Q1 joins by resistance R 7～R11 and power supply input anode DCIN.
The explanation of the utility model application process:
As shown in Figure 2:
In inverse excitation type converter circuit of the present utility model, when the inner metal-oxide-semiconductor of switching power source chip U1 turn-offs, if U
d+ U
insurpass 600V, the inner metal-oxide-semiconductor drain-source voltage of U1 U
dscan at 600V, no longer be risen by Transient Suppression Diode D4, D5 clamper, i.e. U
ds=600V<700V, thus the metal-oxide-semiconductor of U1 inside effectively protected; Meanwhile, the metal-oxide-semiconductor Q1 being connected between the inner metal-oxide-semiconductor of U1 and transformer T1 also can turn-off, by the inner metal-oxide-semiconductor of switching power source chip U1 and metal-oxide-semiconductor Q1 shared input voltage U
inand transformer reverse voltage U
d, i.e. U
ds+ U
dsQl=U
d+ U
in, choose the withstand voltage U of drain-source of metal-oxide-semiconductor Q1
ds_maxQlfor 900V, input voltage U
m≤ U
ds+ U
ds_maxQl-U
d=600+900-200=1300V, so this circuit can be worked in high pressure occasion (input voltage reaches 1000V).
The Switching Power Supply that embodiment adopts is inverse excitation type converter, and its structure, principle are simpler, can react comparatively clearly structure of the present utility model, principle and effect.
The utility model also can be used in similar other Switching Power Supplies of structure.
Claims (3)
1. the Switching Power Supply metal-oxide-semiconductor protective circuit under high input voltage, is characterized in that Switching Power Supply metal-oxide-semiconductor two ends clamp circuit in parallel, the bleeder circuit of connecting between Switching Power Supply metal-oxide-semiconductor and transformer.
2. the Switching Power Supply metal-oxide-semiconductor protective circuit under a kind of high input voltage according to claim 1, is characterized in that described clamp circuit is comprised of Transient Suppression Diode.
3. the Switching Power Supply metal-oxide-semiconductor protective circuit under a kind of high input voltage according to claim 1, is characterized in that described bleeder circuit is comprised of MOS and drive circuit thereof, and drive circuit is comprised of voltage-stabiliser tube and resistance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320708295.9U CN203537221U (en) | 2013-11-08 | 2013-11-08 | MOS transistor protection circuit of switch power supply under high input voltage |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320708295.9U CN203537221U (en) | 2013-11-08 | 2013-11-08 | MOS transistor protection circuit of switch power supply under high input voltage |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203537221U true CN203537221U (en) | 2014-04-09 |
Family
ID=50423392
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320708295.9U Expired - Fee Related CN203537221U (en) | 2013-11-08 | 2013-11-08 | MOS transistor protection circuit of switch power supply under high input voltage |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203537221U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106341045A (en) * | 2015-07-07 | 2017-01-18 | 快捷半导体(苏州)有限公司 | Power supply system, adaptive clamping circuitry and method for controlling adaptive clamping circuitry |
-
2013
- 2013-11-08 CN CN201320708295.9U patent/CN203537221U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106341045A (en) * | 2015-07-07 | 2017-01-18 | 快捷半导体(苏州)有限公司 | Power supply system, adaptive clamping circuitry and method for controlling adaptive clamping circuitry |
| US10116202B2 (en) | 2015-07-07 | 2018-10-30 | Fairchild Semiconductor Corporation | Adaptive clamping circuitry |
| CN106341045B (en) * | 2015-07-07 | 2019-02-05 | 快捷半导体(苏州)有限公司 | The method of power-supply system, adaptive clamp circuit and the adaptive clamp circuit of control |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140409 Termination date: 20161108 |