CN107681004A - A kind of elemental semiconductor transverse direction double-diffused transistor with polycyclic Electric Field Modulated substrate - Google Patents
A kind of elemental semiconductor transverse direction double-diffused transistor with polycyclic Electric Field Modulated substrate Download PDFInfo
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- CN107681004A CN107681004A CN201710812421.8A CN201710812421A CN107681004A CN 107681004 A CN107681004 A CN 107681004A CN 201710812421 A CN201710812421 A CN 201710812421A CN 107681004 A CN107681004 A CN 107681004A
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- electric field
- polycyclic
- field modulated
- substrate
- transverse direction
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- 230000005684 electric field Effects 0.000 title claims abstract description 85
- 125000003367 polycyclic group Chemical group 0.000 title claims abstract description 59
- 239000000758 substrate Substances 0.000 title claims abstract description 34
- 239000004065 semiconductor Substances 0.000 title claims abstract description 30
- 230000015556 catabolic process Effects 0.000 claims abstract description 20
- 239000003989 dielectric material Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 235000012489 doughnuts Nutrition 0.000 claims description 4
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 239000002210 silicon-based material Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 239000002019 doping agent Substances 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 abstract description 5
- 229910044991 metal oxide Inorganic materials 0.000 abstract description 5
- 150000004706 metal oxides Chemical class 0.000 abstract description 5
- 230000000694 effects Effects 0.000 description 4
- 238000001727 in vivo Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000012938 design process Methods 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
The present invention discloses a kind of elemental semiconductor transverse direction double-diffused transistor with polycyclic Electric Field Modulated substrate.Substrate in the structure below drift region is charge compensation multiring structure.The polycyclic charge compensation of substrate can extend the longitudinal space charge area of lateral double diffusion metal oxide semiconductor FET, the multiring structure can also introduce new electric field peak in surface transverse electric field and the distribution of internal longitudinal electric field simultaneously, surface transverse electric field and internal longitudinal electric field are modulated simultaneously using Electric Field Modulation so that surface transverse electric field and internal longitudinal electric field optimize simultaneously.The breakdown voltage saturation problem that the structure not only breaches horizontal double-diffused transistor because longitudinal direction is pressure-resistant limited and brought, moreover it is possible to have the function that while optimizing surface transverse electric field and internal longitudinal electric field, the breakdown voltage of device can be increased substantially.
Description
Technical field
The present invention relates to semiconductor power device technology field, and in particular to a kind of lateral double diffusion metal oxide is partly led
Body FET.
Background technology
Lateral double diffusion metal oxide semiconductor FET (Lateral Double-diffused MOSFET, letter
Claim LDMOS) have it is easy of integration, heat endurance is good, and preferable frequency stability, low-power consumption, more subconductivity, power drive is small, opens
Close the core that the advantages that speed is high is smart power circuits and high tension apparatus.Due to portable power source management and automobile electronics
The market demand it is growing, receive more and more attention in the world.Be primarily characterized in that base and drain region it
Between add one section it is relatively long drift region is lightly doped, the doping type of the drift region is consistent with drain region.By adding drift region,
It can play a part of sharing breakdown voltage, improve LDMOS breakdown voltage, reach low conducting resistance optimization mesh
Mark, minimize its conduction loss.
In order that obtaining LDMOS device has higher breakdown voltage and relatively low ratio conducting resistance, in device design process
In, it is necessary to meet weaken surface field (Reduced Surface Field, abbreviation RESURF) technology condition cause device
Breakdown point is transferred in vivo from surface.However as the increase of device drift region length, the breakdown voltage of LDMOS device mainly by
It is limited to internal longitudinal voltage endurance capability, i.e. its breakdown voltage gradually tends to saturation with the increase of drift region length, and here it is transverse direction
The voltage saturation effect of power device.
In order to break breakdown voltage saturation effect, the LDMOS with REBULF structures that early stage proposes, by burying in vivo
Enter one layer of N+-Floating layer, redistribute the electric field of lateral high-voltage device, it is high electric field and source to breach traditionally drain terminal
The Electric Field Distribution form for existing fringing field is held, the equipotential effect of N+-Floating floor reduces the high electric field in drain terminal high electric field area,
When silicon reaches its critical breakdown electric field, breakdown voltage improves, and it is pressure-resistant that the substrate of device assume responsibility for most longitudinal direction.
The content of the invention
The present invention proposes a kind of elemental semiconductor transverse direction double-diffused transistor with polycyclic Electric Field Modulated substrate, not only
Breach the breakdown voltage saturation problem that horizontal double-diffused transistor is brought due to pressure-resistant be limited in longitudinal direction, moreover it is possible to reach while excellent
Change the effect of surface transverse electric field and internal longitudinal electric field, increase substantially the breakdown voltage of device.
Technical scheme is as follows：
This has the elemental semiconductor transverse direction double-diffused transistor of polycyclic Electric Field Modulated substrate, including：
The substrate of semi-conducting material；
Positioned at the base of substrate surface and drift region；
Positioned at the source region of base region surface；
Positioned at the drain region on drift region surface；
It is characterized in that：
The substrate is elemental semiconductorses；Adjacent substrate area is arranged to polycyclic Electric Field Modulated knot below drift region
Structure；The width (OA directions) of the polycyclic Electric Field Modulated structure and drift region quite, be by close to drain region one end centered on, to
Close to base one end extend to be formed it is polycyclic；
N-type or p-type doped chemical semi-conducting material is respectively adopted in each ring of the polycyclic Electric Field Modulated structure, or adopts
Use dielectric material；Accordingly, adjacent ring with different materials, different doping types, any or any group of different levels of doping
The mode of conjunction is distinguished.
Such as following three class concrete forms：
1st, polycyclic Electric Field Modulated structure uses elemental semiconductorses completely
Each ring is made up of N-type or p-type doped chemical semi-conducting material respectively；The doping type of wherein adjacent ring and/
Or doping concentration is different, i.e., (1) doping type is different, and doping concentration is identical；(2) though doping type is identical doping concentration not
Together；(3) doping type is different, and doping concentration is also different；
2nd, polycyclic Electric Field Modulated structure uses dielectric material, the dielectric material difference of adjacent ring completely.
3rd, some rings of polycyclic Electric Field Modulated structure are elemental semiconductorses, and some rings are dielectric material, can pass through member
The mode of plain semi-conducting material setting alternate with dielectric material is distinguished, also can still or before use simultaneously two class modes are distinguished.
On the basis of above scheme, the present invention has also further made following optimization：
The representative value of the substrate doping of elemental semiconductorses is 1 × 1013cm-3~1 × 1015cm-3。
In polycyclic Electric Field Modulated structure, the typical dopant concentrations of each ring are 1 × 1014cm-3~1 × 1016cm-3。
Dielectric material is selected from silica and hafnium oxide.
In polycyclic Electric Field Modulated structure the radial width (OB directions) of each ring account for the ratio of drift region entire length according to
Pressure-resistant demand adjustment, typical ratio value is 0.2~0.5, and polycyclic Electric Field Modulated structure is no more than drift region entire length.
The radial width (OB directions) of each ring is equal in polycyclic Electric Field Modulated structure or the radial width of ring that has not
Together；The quantity of the polycyclic Electric Field Modulated structure middle ring adjusts according to pressure-resistant demand, and representative value is 2~5.
Polycyclic Electric Field Modulated structure middle ring is shaped as camber line type ring or ladder type ring.Further, optimum shape is same
(one kind of i.e. above-mentioned camber line type ring is preferably for heart annulus：By circular concentric into multiring structure).
For the device that drift region thickness (OC directions) is 2 μm, drift region length (OB directions) is 30 μm, work as breakdown voltage
It is required that for 500V when, it is polycyclic with the alternate doping of N/P, polycyclic quantity using the polycyclic Electric Field Modulated structure of donut form
For 2~5, the radial width (OB directions) of each ring accounts for the 0.2~0.5 of drift region entire length, polycyclic Electric Field Modulated structure
No more than drift region entire length.
Above-mentioned elemental semiconductorses are typically chosen silicon materials or germanium material.
Technical solution of the present invention has the beneficial effect that：
Substrate area below LDMOS drift region sets polycyclic charge compensation structure buried regions.Polycyclic charge compensation knot
Structure can extend the longitudinal space charge area of lateral double diffusion metal oxide semiconductor FET, while can also be horizontal on surface
New electric field peak is introduced into electric field and the distribution of internal longitudinal electric field, using Electric Field Modulation to surface transverse electric field and body
Interior longitudinal electric field is modulated so that surface transverse electric field and internal longitudinal electric field optimize simultaneously.
The structure not only breaches the breakdown voltage saturation that horizontal double-diffused transistor is brought due to pressure-resistant be limited in longitudinal direction
Problem, moreover it is possible to have the function that while optimizing surface transverse electric field and internal longitudinal electric field, hitting for device can be increased substantially
Wear voltage
Brief description of the drawings
Fig. 1 is a kind of elemental semiconductor transverse direction double-diffused transistor structure with polycyclic Electric Field Modulated substrate of the present invention
Schematic three dimensional views.In Fig. 1, OA is width, and OB is length direction, and OC is thickness direction.
Fig. 2 is along the sectional view in OAC directions at polycyclic charge compensation structure.
Drawing reference numeral explanation：
1- elemental semiconductorses substrates；2- bases；3- source regions；4- drain regions；5- drift regions；6,7,8,9- polycyclic electric fields are adjusted
Each ring of structure processed.
Embodiment
As depicted in figs. 1 and 2, a kind of elemental semiconductor transverse direction double-diffused transistor with polycyclic Electric Field Modulated substrate：
Elemental semiconductorses substrate 1, doping concentration be general element semiconductor single crystal material concentration, representative value 1
×1013cm-3~1 × 1015cm-3；
Positioned at the base 2 on elemental semiconductor substrates surface and drift region 5；
Positioned at the source region 3 of base region surface；
Positioned at the drain region 4 on drift region surface；
Polycyclic Electric Field Modulated structure is arranged to below drift region；
Specifically：
Each ring 6,7,8 and 9 of polycyclic Electric Field Modulated structure can be respectively N-type, p-type doped silicon material, typically adulterate
Concentration reaches 1 × 1014cm-3~1 × 1016cm-3；
Each ring 6,7,8 and 9 of polycyclic Electric Field Modulated structure can also be dielectric material, such as silica, hafnium oxide；
The ratio that the radial width (OB directions) of the polycyclic each ring of Electric Field Modulated structure accounts for drift region entire length can basis
Pressure-resistant demand adjustment, typical ratio value are 0.2~0.5；The width of ring and ring (OB directions), can with it is wide, can not also wait
It is wide；The quantity of ring can adjust according to pressure-resistant demand, and typical case takes 2~5.
The shape of each ring 6,7,8 and 9 of polycyclic Electric Field Modulated structure can be regular figure, such as donut；Or
Irregular figure, such as common camber line type ring, ladder type ring.
The polycyclic Electric Field Modulated structure set can extend the vertical of lateral double diffusion metal oxide semiconductor FET
To space-charge region, while new electric field peak can also be introduced in surface transverse electric field and the distribution of internal longitudinal electric field, utilized
Electric Field Modulation is modulated to surface transverse electric field and internal longitudinal electric field so that surface transverse electric field and in vivo longitudinal direction electricity
Field optimizes simultaneously.Such as：
For thin drift region (2 μm) N-channel LDMOS, when drift region length is 30 μm, common LDMOS breakdown voltages are only
For 300V or so, and the structure of the present invention is used, be 10 μm using each annular width, the concentric circles of the alternate doping of N/P/N types
The breakdown voltage of device can be brought up to 500V or so by ring structure, improve 66.7%.
For thin drift region (2 μm) N-channel LDMOS, when drift region length is 60 μm, common LDMOS breakdown voltages are only
For 400V or so, and the structure of the present invention is used, be 20 μm using each annular width, the concentric circles of the alternate doping of N/P/N types
The breakdown voltage of device can be brought up to 1000V by ring structure, improve 150%.
Certainly, the LDMOS in the present invention can also be P-channel, and its structure is equal with N-channel LDMOS, no longer superfluous herein
State.
Described above is only the preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, without departing from the technical principles of the invention, some improvement and replacement can also be made, these improve and replaced
Scheme also fall into protection scope of the present invention.
Claims (10)
1. a kind of elemental semiconductor transverse direction double-diffused transistor with polycyclic Electric Field Modulated substrate, including：
The substrate of semi-conducting material；
Positioned at the base of substrate surface and drift region；
Positioned at the source region of base region surface；
Positioned at the drain region on drift region surface；
It is characterized in that：
The substrate is elemental semiconductorses；Adjacent substrate area is arranged to polycyclic Electric Field Modulated structure below drift region；
The polycyclic Electric Field Modulated structure is suitable with the width of drift region, is centered on close to the one end in drain region, to close to base
One end extend to be formed it is polycyclic；
N-type or p-type doped chemical semi-conducting material is respectively adopted in each ring of the polycyclic Electric Field Modulated structure, or using Jie
Material；Accordingly, adjacent ring is with different materials, different doping types, different levels of doping any or any combination
Mode is distinguished.
2. the elemental semiconductor transverse direction double-diffused transistor according to claim 1 with polycyclic Electric Field Modulated substrate, its
It is characterised by：The representative value of the substrate doping of elemental semiconductorses is 1 × 1013cm-3~1 × 1015cm-3。
3. the elemental semiconductor transverse direction double-diffused transistor according to claim 1 with polycyclic Electric Field Modulated substrate, its
It is characterised by：In the polycyclic Electric Field Modulated structure, the typical dopant concentrations of each ring are 1 × 1014cm-3~1 × 1016cm-3。
4. the elemental semiconductor transverse direction double-diffused transistor according to claim 1 with polycyclic Electric Field Modulated substrate, its
It is characterised by：The dielectric material is selected from silica and hafnium oxide.
5. the elemental semiconductor transverse direction double-diffused transistor according to claim 1 with polycyclic Electric Field Modulated substrate, its
It is characterised by：The radial width of each ring accounts for the ratio of drift region entire length according to pressure-resistant in the polycyclic Electric Field Modulated structure
Demand adjusts, and typical ratio value is 0.2~0.5, and polycyclic Electric Field Modulated structure is no more than drift region entire length.
6. the elemental semiconductor transverse direction double-diffused transistor according to claim 1 with polycyclic Electric Field Modulated substrate, its
It is characterised by：The radial width of each ring is equal in the polycyclic Electric Field Modulated structure or the radial width of ring that has is different；
The quantity of the polycyclic Electric Field Modulated structure middle ring adjusts according to pressure-resistant demand, and representative value is 2~5.
7. the elemental semiconductor transverse direction double-diffused transistor according to claim 1 with polycyclic Electric Field Modulated substrate, its
It is characterised by：The polycyclic Electric Field Modulated structure middle ring is shaped as camber line type ring or ladder type ring.
8. the elemental semiconductor transverse direction double-diffused transistor according to claim 7 with polycyclic Electric Field Modulated substrate, its
It is characterised by：The polycyclic Electric Field Modulated structure middle ring is shaped as donut.
9. the elemental semiconductor transverse direction double-diffused transistor according to claim 1 with polycyclic Electric Field Modulated substrate, its
It is characterised by：For the device that drift region thickness is 2 μm, drift region length is 30 μm, when breakdown voltage requirement is 500V, adopt
With the polycyclic Electric Field Modulated structure of donut form, polycyclic with the alternate doping of N/P, polycyclic quantity is 2~5, Mei Gehuan
Radial width account for the 0.2~0.5 of drift region entire length, polycyclic Electric Field Modulated structure is no more than drift region entire length.
10. the elemental semiconductor transverse direction double-diffused transistor according to claim 1 with polycyclic Electric Field Modulated substrate, its
It is characterised by：The elemental semiconductorses are silicon materials or germanium material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710812421.8A CN107681004B (en) | 2017-09-11 | 2017-09-11 | Element semiconductor transverse double-diffusion transistor with multi-ring electric field modulation substrate |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710812421.8A CN107681004B (en) | 2017-09-11 | 2017-09-11 | Element semiconductor transverse double-diffusion transistor with multi-ring electric field modulation substrate |
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| CN107681004A true CN107681004A (en) | 2018-02-09 |
| CN107681004B CN107681004B (en) | 2021-08-20 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110379853A (en) * | 2019-07-12 | 2019-10-25 | 电子科技大学 | A kind of MOS control thyristor |
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| US5091336A (en) * | 1985-09-09 | 1992-02-25 | Harris Corporation | Method of making a high breakdown active device structure with low series resistance |
| CN1301044A (en) * | 1999-12-22 | 2001-06-27 | 松下电工株式会社 | Semiconductor device and manufacture thereof |
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| US20110163377A1 (en) * | 2008-04-28 | 2011-07-07 | Panasonic Corporation | Semiconductor device and method for manufacturing the same |
| CN102306659A (en) * | 2011-09-08 | 2012-01-04 | 浙江大学 | LDMOS (laterally double-diffused metal-oxide-semiconductor field effect transistor) device based on internal electric field modulation |
| CN204905261U (en) * | 2015-08-25 | 2015-12-23 | 西华大学 | Withstand voltage structure of horizontal power device of SOI |
| CN106876464A (en) * | 2016-12-29 | 2017-06-20 | 西安电子科技大学 | A kind of lateral double diffusion metal oxide semiconductor FET |
-
2017
- 2017-09-11 CN CN201710812421.8A patent/CN107681004B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4288802A (en) * | 1979-08-17 | 1981-09-08 | Xerox Corporation | HVMOSFET Driver with single-poly gate structure |
| US5091336A (en) * | 1985-09-09 | 1992-02-25 | Harris Corporation | Method of making a high breakdown active device structure with low series resistance |
| CN1301044A (en) * | 1999-12-22 | 2001-06-27 | 松下电工株式会社 | Semiconductor device and manufacture thereof |
| US20110163377A1 (en) * | 2008-04-28 | 2011-07-07 | Panasonic Corporation | Semiconductor device and method for manufacturing the same |
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| CN102306659A (en) * | 2011-09-08 | 2012-01-04 | 浙江大学 | LDMOS (laterally double-diffused metal-oxide-semiconductor field effect transistor) device based on internal electric field modulation |
| CN204905261U (en) * | 2015-08-25 | 2015-12-23 | 西华大学 | Withstand voltage structure of horizontal power device of SOI |
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| CN110379853A (en) * | 2019-07-12 | 2019-10-25 | 电子科技大学 | A kind of MOS control thyristor |
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