CN108389892B - Deep-groove-type transverse voltage-resistant region with longitudinal variable doping dose - Google Patents
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- 239000004065 semiconductor Substances 0.000 abstract description 10
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- 238000000034 method Methods 0.000 abstract description 4
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
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Abstract
The invention belongs to the field of semiconductor power devices, relates to a transverse voltage-withstanding region, and particularly provides a deep-groove transverse voltage-withstanding region with a longitudinally variable doping dose, which is applied to a junction edge terminal of a semiconductor power device or a transverse semiconductor power device. According to the invention, the longitudinal dose distribution of the P-type drift region and/or the N-type drift region is adjusted, and the induction charges which are properly and non-uniformly distributed along the longitudinal direction are actively provided for the deep trench capacitor, so that after the P-type drift region and the N-type drift region which are completely depleted provide corresponding charges for the deep trench capacitor, the distribution of the residual charges is charge balance; based on the method, the breakdown voltage of the deep groove type transverse voltage-resistant region can be improved without influencing other parameters, and the breakdown voltage of the device is further improved.
Description
Technical Field
The invention belongs to the field of semiconductor power devices, and relates to a transverse voltage-resistant region, in particular to a transverse voltage-resistant region with a deep groove structure; the junction edge terminal can be applied to a junction edge terminal of a semiconductor power device, or a Lateral semiconductor power device comprises a voltage-resistant area of LDMOS (laterally Double-Diffused MOSFET), LIGBT (laterally Insulated Gate Bipolar transistor).
Background
Semiconductor power devices with a Lateral voltage-resistant region, such as LDMOS (laterally Double-diffused mosfet, LDMOS), are widely used on power integrated chips due to the characteristics of easy integration, easy driving, high voltage resistance, low power consumption, and the like; however, these devices generally require a large chip surface area to maintain a high withstand voltage, thereby increasing the chip manufacturing cost.
The transverse voltage-resistant area with a deep groove structure is used for carrying out voltage resistance on the surface of a device by using a deep groove filled with an insulating medium to replace a traditional semiconductor material such as silicon; because the critical breakdown field strength of the insulating medium is generally much higher than that of silicon, the length of the insulating medium is smaller and the surface area of the device is greatly reduced when the insulating medium and the silicon material are subjected to the same voltage. Further, if a longitudinal column region with the conductivity type opposite to that of the substrate is introduced at one side or both sides of the trench gate, a drift region similar to a super junction structure can be formed, and the specific on-resistance of the device can be reduced while the high withstand voltage of the device is maintained. A typical structure is shown in fig. 8, and includes a substrate (01), an N-type substrate region (02), an N-type drift region (03), a P-type drift region (04), a dielectric material (05), a cathode N + (06), an anode P + (07), an anode (08), and a cathode (09), wherein the N-type substrate region (02) is located above the substrate (01); the N-type drift region (03), the P-type drift region (04) and the dielectric material (05) are arranged above the N-type substrate region (02) and are semi-surrounded by the N-type substrate region (02), wherein the N-type drift region (03) is located on the left side of the P-type drift region (04), and the P-type drift region (04) is located on the left side of the dielectric material (05); an anode P + (07) is positioned above the N-type drift region (03) and the P-type drift region (04); above the anode P + (07) is an anode (08); on the right side of the dielectric material (05) and above the N-type substrate region (02) is a cathode N + (06); positioned above the cathode N + (06) is a cathode (09); in the structure of fig. 8, the N-type substrate region (02) is heavily doped, the N-type drift region (03) and the P-type drift region (04) compensate each other to form a drift region of a super junction structure, and the structure can be practically applied to various devices, such as N-type or P-type LDMOS, LIGBT and the like.
However, the deep trench is generally narrow in width and large in lateral capacitance, a high-density charge thin layer is induced and accumulated in the semiconductor regions on two sides of the trench during the device voltage withstanding, and as the potential difference on two sides of the trench linearly decreases from top to bottom along the longitudinal direction during the device voltage withstanding, the charge thin layer is also non-uniformly distributed along the longitudinal direction, so that charge imbalance occurs in the drift region of the super junction structure, and the voltage withstanding of the device is greatly weakened; aiming at the problem, the invention provides a deep groove type transverse voltage-resisting area with longitudinal variable doping dosage, which overcomes the influence of deep groove capacitance and can obviously improve the breakdown voltage of the deep groove type transverse voltage-resisting area.
Disclosure of Invention
The invention aims to provide a deep-groove type transverse voltage-withstanding region with a longitudinally variable doping dose, which is used for improving the breakdown voltage of the deep-groove type transverse voltage-withstanding region without influencing other parameters, so that the breakdown voltage of a device is improved.
In order to achieve the purpose, the invention adopts the technical scheme that:
a deep groove type transverse voltage-resisting region with a longitudinal variable doping dose comprises a substrate (01), an N-type substrate region (02), an N-type drift region (03), a P-type drift region (04), a dielectric material (05), a cathode N + (06), an anode P + (07), an anode (08) and a cathode (09), wherein the N-type substrate region (02) is positioned above the substrate (01); the N-type drift region (03), the P-type drift region (04) and the dielectric material (05) are arranged above the N-type substrate region (02) and are semi-surrounded by the N-type substrate region (02), wherein the P-type drift region (04) is positioned on the left side of the dielectric material (05), and the N-type drift region (03) is positioned on the left side of the P-type drift region (04); the anode P + (07) is positioned above the N-type drift region (03) and the P-type drift region (04), and an anode (08) is arranged above the anode P + (07); the cathode N + (06) is arranged on the right side of the dielectric material (05) and is positioned above the N-type substrate area (02), and the cathode (09) is arranged above the cathode N + (06); the super-junction drift structure is characterized in that the N-type drift region (03) and the P-type drift region (04) form a super-junction drift region, and the net doping amount of the super-junction drift region decreases linearly or in a step shape from top to bottom along with the increase of the depth.
A deep-groove type transverse voltage-resisting region with a longitudinal variable doping dose comprises a substrate (01), an N-type substrate region (02), a first N-type drift region (03), a first P-type drift region (04), a dielectric material (05), a cathode N + (06), an anode P + (07), an anode (08), a cathode (09), a second N-type drift region (10) and a second P-type drift region (11), wherein the N-type substrate region (02) is located above the substrate (01); the first N-type drift region (03), the first P-type drift region (04), the dielectric material (05) and the second N-type drift region (10) are arranged above the N-type substrate region (02), wherein the first P-type drift region (04) is positioned on the left side of the dielectric material (05), the first N-type drift region (03) is positioned on the left side of the P-type drift region (04), and the second N-type drift region (10) is positioned on the right side of the dielectric material (05); the anode P + (07) is positioned above the first N-type drift region (03) and the first P-type drift region (04), and an anode (08) is arranged above the anode P + (07); the cathode N + (06) is positioned above the second N-type drift region (10), the cathode (09) is arranged above the cathode N + (06), and the second P-type drift region (11) is arranged between the cathode N + (06) and the substrate (01) and positioned on the right side of the second N-type drift region (10); the super-junction drift structure is characterized in that the first N-type drift region (03) and the first P-type drift region (04) form a first super-junction drift region, the second N-type drift region (10) and the second P-type drift region (11) form a second super-junction drift region, and the net doping doses of the first super-junction drift region and the second super-junction drift region are linearly or stepwisely decreased from top to bottom along with the increase of the depth.
Further, the critical electric field intensity of the dielectric material (05) is higher than that of siliconDielectric materials of insulating material, including but not limited to SiO2、Si3N4Benzocyclobutene (BCB) or PolyTetraFluoroEthylene (PTFE). The substrate (01) is a silicon semiconductor substrate or an SOI material.
It should be particularly noted that, in the two schemes, one of the two schemes is a single-sided structure, and the other is a double-sided structure, and the two schemes have the same concept and have the single property.
In the present invention, the depth refers to the longitudinal distance from the anode P + (07) or cathode N + (06); the net doping amount of the super junction drift region at any depth is the difference value obtained by subtracting the doping amount of the drift region far away from the dielectric material in the super junction drift region at the depth from the doping amount of the drift region adjacent to the dielectric material in the super junction drift region at the depth, and the net doping amount is a positive value; the net doping amount of the super-junction drift region in the single-side structure refers to the difference obtained by subtracting the doping amount of the N-type drift region (03) at the depth from the doping amount of the P-type drift region (04) at the depth, the net doping amount of the first super-junction drift region in the double-side structure refers to the difference obtained by subtracting the doping amount of the first N-type drift region (03) at the depth from the doping amount of the first P-type drift region (04) at the depth, and the net doping amount of the second super-junction drift region in the double-side structure refers to the difference obtained by subtracting the doping amount of the second P-type drift region (11) at the depth from the doping amount of the second N-type drift region (10) at the depth; the doping dose of the N-type and P-type drift regions at any depth is the doping concentration of the drift region at that depth multiplied by the width of the drift region.
The invention has the beneficial effects that:
the invention provides a deep groove type transverse voltage-resisting area with longitudinal variable doping dose, which actively provides induction charges which are properly and non-uniformly distributed along the longitudinal direction for a deep groove capacitor by adjusting the longitudinal dose distribution of P type drift areas (04 and 11) and/or N type drift areas (03 and 10), so that after the P type drift areas and the N type drift areas provide corresponding charges for the deep groove capacitor when the deep groove capacitor is completely depleted, the distribution of residual charges is charge balance, and the breakdown voltage is improved.
Drawings
Fig. 1 is a schematic structural diagram of a deep trench type lateral voltage-withstanding region with a longitudinally variable dopant dose in embodiment 1 of the present invention, wherein the P-type drift region (04) has a longitudinally variable dopant concentration.
Fig. 2 is a schematic structural diagram of a deep trench type lateral voltage-withstanding region with a longitudinally variable dopant dose in embodiment 2 of the present invention, wherein the N-type drift region (03) has a longitudinally variable dopant concentration.
Fig. 3 is a schematic structural diagram of a deep trench type lateral voltage-withstanding region with a longitudinally variable dopant dose in embodiment 3 of the present invention, wherein the P-type drift region (04) has a longitudinally variable width.
Fig. 4 is a schematic structural diagram of a deep trench type lateral voltage-withstanding region with a longitudinally variable dopant dose in embodiment 4 of the present invention, wherein the P-type drift region (04) has both a longitudinally variable dopant concentration and a longitudinally variable width.
Fig. 5 is a schematic structural diagram of a deep trench type lateral voltage-withstanding region having a double-sided structure and realizing a longitudinally variable dopant dose by a longitudinally variable dopant concentration in embodiment 5 of the present invention.
Fig. 6 is a schematic structural diagram of a deep trench type lateral voltage-withstanding region having a double-sided structure and realizing a longitudinally variable dopant dose by virtue of a longitudinally variable width according to embodiment 6 of the present invention.
Fig. 7 is a schematic structural diagram of implementing a longitudinally variable dopant dose by simultaneously longitudinally variable dopant concentration and longitudinally variable width in embodiment 7 of the present invention.
Fig. 8 is a schematic diagram of a conventional deep trench type lateral voltage-withstanding region structure, in which the N-type drift region (03) and the P-type drift region (04) are uniformly doped.
Fig. 9 and 10 are graphs comparing simulation results of embodiment 1 of the present invention and conventional structures.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples.
Example 1
The present embodiment provides a deep trench type lateral voltage-withstanding region with a longitudinally variable dopant dose, which has a structure as shown in fig. 1; the N-type drift region comprises a substrate (01), an N-type substrate region (02), an N-type drift region (03), a P-type drift region (04), a dielectric material (05), a cathode N + (06), an anode P + (07), an anode (08) and a cathode (09), wherein the N-type substrate region (02) is positioned above the substrate (01); the N-type drift region (03), the P-type drift region (04) and the dielectric material (05) are arranged above the N-type substrate region (02) and are semi-surrounded by the N-type substrate region (02), wherein the P-type drift region (04) is positioned on the left side of the dielectric material (05), and the N-type drift region (03) is positioned on the left side of the P-type drift region (04); the anode P + (07) is positioned above the N-type drift region (03) and the P-type drift region (04), and an anode (08) is arranged above the anode P + (07); the cathode N + (06) is arranged on the right side of the dielectric material (05) and is positioned above the N-type substrate area (02), and the cathode (09) is arranged above the cathode N + (06); the N-type drift region (03) and the P-type drift region (04) form a super-junction drift region, and the net dopant amount of the super-junction drift region decreases linearly or in a step shape from top to bottom along with the increase of the depth.
In this embodiment, the N-type drift region (03) is uniformly doped with N, and has a width WnThe P-type drift region (04) is constant, realizes variable doping by adopting multiple sections, and has a width WpKeeping the same, dividing the P-type drift region (04) into n sections and satisfying the doping concentration P1>P2>P…>Pn-1>Pn; as shown in FIG. 1, at depth H, the N-type drift region (03) has a dopant amount QN＝WnThe N, P-type drift region (04) has a dopant amount of QP＝WP·P1And the net doping dose of the super-junction drift region is Q ═ QP-QN(ii) a The net dopant level decreases stepwise as the depth H increases until the N-type substrate region (02) is zero.
By means of MEDICI simulation software, simulation comparison is carried out on the traditional deep-groove voltage-withstanding region with the longitudinal uniform doping dose shown in FIG. 8 and the deep-groove voltage-withstanding region with the longitudinal variable doping dose of the embodiment, and in the simulation process, a P-type drift region (04) in FIG. 8 is uniformly doped and has the doping concentration of 5 × 1016cm-3In the figure 1, the doping concentration is longitudinal variable doping, and other simulation parameters are that the depth of the P-type drift region (04) is 20 mu m, the width of the P-type drift region is 0.5 mu m, the depth of the N-type drift region (03) is 20 mu m, the width of the N-type drift region is 1 mu m, and the doping concentration of the N-type drift region is 2 × 1016cm-3(ii) a The depth of the dielectric material (05) is 20 μm, the width is 2.2 μm, and the material is SiO2(ii) a N type substrate area (02)And the substrate (01) and the N-type material with extremely high doping concentration are adopted. The simulation result is shown in fig. 9, when the current is 1nA/μm, the breakdown voltage of the conventional structure is 194V, but the breakdown voltage is improved to 363V by the invention, and the breakdown voltage is remarkably improved; as shown in fig. 10, which is a comparison graph of the distribution of the longitudinal component of the electric field along the drift region direction when the deep-trench voltage-withstanding region proposed by the present invention and the conventional deep-trench voltage-withstanding region are subjected to critical breakdown, it is obvious that the electric field distribution in the longitudinal direction of the structure of the present invention is flatter and more uniform, like the electric field distribution of the super-junction device during charge balance, and therefore, the structure can bear a larger voltage within a limited length.
In summary, the deep trench lateral voltage-withstanding region with longitudinally variable dopant dose provided by the present invention can obtain a significant increase in breakdown voltage.
Example 2
The present embodiment provides a deep trench type lateral voltage-withstanding region with a longitudinally variable dopant dose, which has a structure as shown in fig. 2; the basic structure is the same as that of embodiment 1, the only difference is that the P-type drift region (04) is uniformly doped, and the N-type doped region (03) is divided into N segments and satisfies the doping concentration N1< N2< N … < Nn-1< Nn.
Example 3
The present embodiment provides a deep trench type lateral voltage-withstanding region with a longitudinally variable dopant dose, which has a structure as shown in fig. 3; the basic structure is the same as that of the embodiment 1, and the only difference is that the P-type drift region (04) is longitudinally and uniformly doped, but the width of the P-type drift region is reduced longitudinally from top to bottom, so that the doping amount of the P-type drift region is linearly reduced from top to bottom.
Example 4
The present embodiment provides a deep trench type lateral voltage-withstanding region with a longitudinally variable dopant dose, which has a structure as shown in fig. 4; the basic structure is the same as that of the embodiment 1, and the only difference is that the P-type drift region (04) is longitudinally doped, and the width of the P-type drift region is longitudinally changed, so that the doping amount is linearly or stepwisely decreased from top to bottom.
Example 5
The present embodiment provides a deep trench type lateral voltage-withstanding region with a longitudinally variable dopant dose, which has a structure as shown in fig. 5; the N-type drift region comprises a substrate (01), an N-type substrate region (02), a first N-type drift region (03), a first P-type drift region (04), a dielectric material (05), a cathode N + (06), an anode P + (07), an anode (08), a cathode (09), a second N-type drift region (10) and a second P-type drift region (11), wherein the N-type substrate region (02) is located above the substrate (01); the first N-type drift region (03), the first P-type drift region (04), the dielectric material (05) and the second N-type drift region (10) are arranged above the N-type substrate region (02), wherein the first P-type drift region (04) is positioned on the left side of the dielectric material (05), the first N-type drift region (03) is positioned on the left side of the P-type drift region (04), and the second N-type drift region (10) is positioned on the right side of the dielectric material (05); the anode P + (07) is positioned above the first N-type drift region (03) and the first P-type drift region (04), and an anode (08) is arranged above the anode P + (07); the cathode N + (06) is positioned above the second N-type drift region (10), a cathode (09) is arranged above the cathode N + (06), and the second P-type drift region (11) is positioned between the cathode N + (06) and the substrate (01); the first N-type drift region (03) and the first P-type drift region (04) form a first super-junction drift region, the second N-type drift region (10) and the second P-type drift region (11) form a second super-junction drift region, and the net doping dose of the first super-junction drift region and the net doping dose of the second super-junction drift region decrease linearly or in a step shape from top to bottom along with the increase of the depth.
In the embodiment, super-junction drift regions are manufactured on two sides of the groove, wherein the second N-type drift region (10) and the second P-type drift region (11) are complementary to form a second super-junction drift region on the right side of the groove, and the second N-type drift region (10) and the second P-type drift region (11) can also be divided into multiple sections to realize gradual doping, so that the influence of deep groove capacitance is overcome, and the gradual doping mode is the same as that of the N-type drift region (03) or the P-type drift region (04).
Example 6
The present embodiment provides a deep trench type lateral voltage-withstanding region with a longitudinally variable dopant dose, which has a structure as shown in fig. 6; the basic structure is the same as that of the embodiment 5, and the only difference is that the first P type drift region (04) and the second N type drift region (10) are longitudinally variable in width, so that the doping dose of the P type drift region and the second N type drift region is linearly reduced from top to bottom.
Example 7
The present embodiment provides a deep trench type lateral voltage-withstanding region with a longitudinally variable dopant dose, which has a structure as shown in fig. 7; the basic structure of the drift region is the same as that of the embodiment 5, and the only difference is that the first P type drift region (04) and the second N type drift region (10) are longitudinally doped and longitudinally width-varied simultaneously, so that the doping dose is reduced linearly or in a step shape from top to bottom.
While the invention has been described with reference to specific embodiments, any feature disclosed in this specification may be replaced by alternative features serving the same, equivalent or similar purpose, unless expressly stated otherwise; all of the disclosed features, or all of the method or process steps, may be combined in any combination, except mutually exclusive features and/or steps.
Claims (2)
1. A deep groove type transverse voltage-resisting region with a longitudinal variable doping dose comprises a substrate (01), an N-type substrate region (02), an N-type drift region (03), a P-type drift region (04), a dielectric material (05), a cathode N + (06), an anode P + (07), an anode (08) and a cathode (09), wherein the N-type substrate region (02) is positioned above the substrate (01); the N-type drift region (03), the P-type drift region (04) and the dielectric material (05) are arranged above the N-type substrate region (02) and are semi-surrounded by the N-type substrate region (02), wherein the P-type drift region (04) is positioned on the left side of the dielectric material (05), and the N-type drift region (03) is positioned on the left side of the P-type drift region (04); the anode P + (07) is positioned above the N-type drift region (03) and the P-type drift region (04), and an anode (08) is arranged above the anode P + (07); the cathode N + (06) is arranged on the right side of the dielectric material (05) and is positioned above the N-type substrate area (02), and the cathode (09) is arranged above the cathode N + (06); the super-junction drift structure is characterized in that the N-type drift region (03) and the P-type drift region (04) form a super-junction drift region, and the net doping dose of the super-junction drift region decreases linearly or in a step shape from top to bottom along with the increase of the depth; the net doping amount of the super junction drift region at any depth is the difference of the doping amount of the drift region adjacent to the dielectric material in the super junction drift region at the depth minus the doping amount of the drift region far away from the dielectric material in the super junction drift region at the depth, and the net doping amount is a positive value.
2. A deep-groove type transverse voltage-resisting region with a longitudinal variable doping dose comprises a substrate (01), an N-type substrate region (02), a first N-type drift region (03), a first P-type drift region (04), a dielectric material (05), a cathode N + (06), an anode P + (07), an anode (08), a cathode (09), a second N-type drift region (10) and a second P-type drift region (11), wherein the N-type substrate region (02) is located above the substrate (01); the first N-type drift region (03), the first P-type drift region (04), the dielectric material (05) and the second N-type drift region (10) are arranged above the N-type substrate region (02), wherein the first P-type drift region (04) is positioned on the left side of the dielectric material (05), the first N-type drift region (03) is positioned on the left side of the first P-type drift region (04), and the second N-type drift region (10) is positioned on the right side of the dielectric material (05); the anode P + (07) is positioned above the first N-type drift region (03) and the first P-type drift region (04), and an anode (08) is arranged above the anode P + (07); the cathode N + (06) is positioned above the second N-type drift region (10), the cathode (09) is arranged above the cathode N + (06), and the second P-type drift region (11) is arranged between the cathode N + (06) and the substrate (01) and positioned on the right side of the second N-type drift region (10); the super-junction drift structure is characterized in that the first N-type drift region (03) and the first P-type drift region (04) form a first super-junction drift region, the second N-type drift region (10) and the second P-type drift region (11) form a second super-junction drift region, and the net doping doses of the first super-junction drift region and the second super-junction drift region are linearly or stepwisely decreased from top to bottom along with the increase of the depth; the net doping amount of the super junction drift region at any depth is the difference of the doping amount of the drift region adjacent to the dielectric material in the super junction drift region at the depth minus the doping amount of the drift region far away from the dielectric material in the super junction drift region at the depth, and the net doping amount is a positive value.
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| CN111293177A (en) * | 2020-02-28 | 2020-06-16 | 电子科技大学 | Power semiconductor device |
| CN111524798B (en) * | 2020-04-03 | 2022-05-03 | 电子科技大学 | Preparation method of deep-groove transverse pressure-resistant region with longitudinal linear variable doping |
| CN111799334B (en) * | 2020-07-31 | 2021-06-11 | 四川大学 | Super junction MOSFET (metal-oxide-semiconductor field effect transistor) with reverse conductive groove gate structure |
| CN113421922B (en) * | 2021-06-25 | 2022-05-13 | 电子科技大学 | Three-dimensional IGBT with grid self-clamping function and manufacturing method thereof |
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| EP2290697A1 (en) * | 2009-09-01 | 2011-03-02 | STMicroelectronics S.r.l. | High-voltage semiconductor device with column structures and method of making the same |
| CN107275388A (en) * | 2017-06-26 | 2017-10-20 | 电子科技大学 | A kind of lateral high-voltage device |
| CN107359192A (en) * | 2017-07-28 | 2017-11-17 | 电子科技大学 | A kind of lateral high-voltage device |
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| EP2290697A1 (en) * | 2009-09-01 | 2011-03-02 | STMicroelectronics S.r.l. | High-voltage semiconductor device with column structures and method of making the same |
| CN107275388A (en) * | 2017-06-26 | 2017-10-20 | 电子科技大学 | A kind of lateral high-voltage device |
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