CN107587194B - Polycrystalline silicon ingot casting furnace and method - Google Patents
Polycrystalline silicon ingot casting furnace and method Download PDFInfo
- Publication number
- CN107587194B CN107587194B CN201711040877.3A CN201711040877A CN107587194B CN 107587194 B CN107587194 B CN 107587194B CN 201711040877 A CN201711040877 A CN 201711040877A CN 107587194 B CN107587194 B CN 107587194B
- Authority
- CN
- China
- Prior art keywords
- furnace body
- heat
- spacer sleeve
- polycrystalline silicon
- supporting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Abstract
The invention belongs to the technical field of polycrystalline silicon production. A polycrystalline silicon ingot casting furnace and a method thereof comprise a furnace body, wherein the furnace body comprises an upper furnace body and a lower furnace body which are correspondingly buckled in a matching manner, and a switching power mechanism which can be switched vertically is arranged between the upper furnace body and the lower furnace body; the supporting table comprises a lower heat insulation plate and a supporting plate which are arranged in the lower furnace body in parallel at intervals, and a supporting column for connecting and supporting the lower heat insulation plate, the supporting plate and the lower furnace body, and a crucible is arranged on the supporting table; and a heating chamber. The method and the device can form a dynamic variable thermal field distribution in the online production process, so that the thermal field distribution can be adjusted according to the process requirements, and the crystal grain size and the crystal orientation verticality of the product are greatly improved; the method can also effectively control the heat loss speed and can adjust in real time, thereby providing a better crystallization environment for the quality of the polycrystalline silicon, further meeting the further development of related industries and having great market value.
Description
Technical Field
The invention belongs to the technical field of polycrystalline silicon production, and particularly relates to a polycrystalline silicon ingot casting furnace and a method.
Background
A large number of crystal boundaries exist in the cast polycrystalline silicon, the clean crystal boundaries are non-electrically active and have no influence or only small influence on the service life of minority carriers, the electric activity of the crystal boundaries can be changed by the segregation or precipitation of impurities, the service life of the minority carriers can be obviously reduced, and the influence is larger when the number of the crystal boundaries is larger; however, research shows that if the grain boundary is perpendicular to the surface of the device, the grain boundary has little influence on the electrochemical performance of the material, so that the improvement of the grain size and the crystal growth direction is an effective method for improving the quality of the polycrystalline silicon ingot.
The polysilicon ingot furnace is directional solidification equipment for silicon, and has the function of melting, directional crystallization, annealing and cooling polysilicon according to a set process to form a polysilicon ingot with a certain crystal growth direction. The environment required by the polycrystalline silicon ingot casting process is the thermal field of the polycrystalline ingot casting furnace. The crystal growth direction of the final polycrystalline silicon ingot can be changed by reasonably designing the power distribution of the heater in the thermal field and the position and thickness distribution of the heat-insulating material.
In addition, because the production process of the polycrystalline silicon is divided into a full-melting-method ingot casting process and a semi-melting-method ingot casting process, the control processes of the two processes to the thermal field in the ingot casting process are completely different, and the prior art does not have a technology for switching the two processes on the same equipment, in addition, because the prior art is insensitive to the regulation and control of the thermal field, and the distribution of the thermal field can not effectively control the grain size and the crystal growth direction of the crystal orientation, the production quality is in a bottleneck state, further breakthrough can not be realized, and the rapid development in industries such as photovoltaic cells and the like can not be met, the structure and the process of the prior ingot furnace are required to be improved, so that the quality of the polycrystalline silicon product can be improved.
Disclosure of Invention
The invention aims to solve the problems and the defects, and provides a polycrystalline silicon ingot furnace and a method which have reasonable structural design and good stability and can greatly improve the practicability and the quality of products.
In order to achieve the purpose, the technical scheme is as follows:
a polycrystalline silicon ingot casting furnace comprises a furnace body, wherein the furnace body comprises an upper furnace body and a lower furnace body which are correspondingly buckled in a matching manner, and an opening and closing power mechanism for opening and closing the upper furnace body and the lower furnace body is arranged between the upper furnace body and the lower furnace body; the supporting table comprises a lower heat insulation plate and a supporting plate which are arranged in the lower furnace body in parallel at intervals, and a supporting column for connecting and supporting the lower heat insulation plate, the supporting plate and the lower furnace body, and a crucible is arranged on the supporting table; the heating cavity comprises an upper insulation board and an annular side insulation wall, heaters are arranged on the inner sides of the upper insulation board and the side insulation wall, a lifting mechanism is arranged between the side insulation wall and the upper furnace body, the upper end and the lower end of the side insulation wall are respectively provided with a butt joint edge extending inwards, and the butt joint edge of the side insulation wall is connected with the lower insulation board in a matching and overlapping mode; and a control system and a pumping and exhausting system; the crystal-growing heat slow-flow dissipation assembly is arranged between the lower heat insulation plate and the side heat insulation wall and comprises an outer spacer sleeve and an inner spacer sleeve, the outer spacer sleeve is sleeved on the lower end of the side heat insulation wall in a butt joint edge, the inner spacer sleeve is pivoted on the lower heat insulation plate in a matching mode, the inner spacer sleeve and the outer spacer sleeve are matched, slidably attached and sleeved, an overlapping edge extending outwards is arranged at the upper end of the outer spacer sleeve, when the side heat insulation wall and the lower heat insulation plate are in a separation state, the outer spacer sleeve is hung on the side heat insulation wall in a matching mode through the overlapping edge, and when the side heat insulation wall and the lower heat insulation plate are in a closing state, the outer spacer sleeve is supported and arranged on the lower heat insulation plate.
The outer spacer sleeve and the inner spacer sleeve are both provided with elongated heat dissipation holes, the lower heat insulation plate is provided with a rotary power mechanism for driving the inner spacer sleeve to rotate, and when crystal growth is carried out through heat dissipation, the rotary power mechanism adjusts the heat dissipation capacity of airflow between the inner spacer sleeve and the outer spacer sleeve.
The rotary power mechanism comprises a rotary shaft which is pivoted on the lower furnace body, a driving gear which is arranged at the top of the rotary shaft, a section of arc-shaped adjusting groove which is arranged on the lower heat insulation plate, a driving arm which is arranged on an inner bushing corresponding to the arc-shaped adjusting groove, a gear ring which is fixedly arranged at the lower end of the driving arm and a driving motor, wherein the driving gear is in matching meshing transmission with the gear ring.
The utility model discloses a thermal field structure, including crucible, annular groove has been seted up in the bottom outside of crucible, the inner chamber bottom of crucible is provided with the arc wall, and the inner chamber bottom cross-section of crucible is wavy threadiness, the equipartition is equipped with the annular mounting groove on the lateral wall of crucible, the lateral wall of crucible still is equipped with the heat preservation strip, and according to the distribution of different thermal field structures, the matching is inserted and is established the heat preservation strip in corresponding annular mounting groove.
The backup pad includes the bottom suspension fagging, goes up supporting ring, pin joint setting at the regulating spindle at support column middle part, supports the well supporting disk that sets up at the regulating spindle top and set up the dish that adjusts the temperature between well supporting disk and last supporting ring through the bearing, be provided with labyrinth recess on the dish that adjusts the temperature, the fixed setting of dish that adjusts the temperature is on the regulating spindle, and the top surface and the crucible laminating of the dish that adjusts the temperature the outside driving motor who drives the regulating spindle that is provided with of lower furnace body.
A polycrystalline silicon ingot casting method is a polycrystalline silicon ingot casting process which is carried out by utilizing the polycrystalline silicon ingot casting furnace.
By adopting the technical scheme, the beneficial effects are as follows:
the distribution of the whole thermal field can be rearranged through the structural design of the crucible and the supporting plate, and a dynamically variable thermal field distribution in the online production process can be formed, so that the distribution of the thermal field can be adjusted according to the process requirement, and the crystal grain size and the crystal orientation verticality of the product are greatly improved; this application can also be through the structural design of side heat preservation wall and lower heated board, and in carrying out the crystallization process, the effectual control heat speed that scatters and disappears to can adjust in real time, thereby for the quality of polycrystalline silicon provides better crystallization environment, through the design of above structure, this application can effectual improvement polycrystalline silicon's product quality, thereby satisfies the further development of relevant trade, has very big market value.
Drawings
FIG. 1 is a schematic structural diagram of the present invention.
Fig. 2 is a schematic structural diagram of the inner and outer spacers.
Fig. 3 is a schematic structural view of the support plate.
FIG. 4 is a schematic view of the structure of the crucible.
Fig. 5 is a bottom view of the structure of fig. 4.
Number in the figure: 101 is an upper furnace body, 102 is a lower furnace body, 200 is a support table, 201 is a lower heat-insulating plate, 202 is a support plate, 2021 is a lower support plate, 2022 is an upper support ring, 2023 is an adjusting shaft, 2024 is a middle support plate, 2025 is a bearing, 2026 is a temperature-adjusting disc, 203 is a support column, 300 is a heating chamber, 301 is an upper heat-insulating plate, 302 is a side heat-insulating wall, 303 is a lifting mechanism, 304 is a heater, 305 is a butt joint edge, 400 is a suction and exhaust system, 501 is an outer spacer, 502 is an inner spacer, 503 is a lap joint edge, 504 is a heat dissipation hole, 505 is a rotating shaft, 506 is a driving gear, 507 is an arc-shaped adjusting groove, 508 is a driving arm, 509 is a gear ring, 510 is a driving motor, 600 is a crucible, 601 is an annular groove, 602 is an arc-shaped groove, 603 is an annular mounting groove, and 604 is a heat-insulating strip.
Detailed Description
The following detailed description of embodiments of the invention refers to the accompanying drawings.
Referring to fig. 1 to 5, the application relates to a polycrystalline silicon ingot furnace, which comprises a furnace body, a supporting platform 200, a heating chamber 300, a control system and a pumping and exhausting system 400; the furnace body comprises an upper furnace body 101 and a lower furnace body 102 which are correspondingly buckled in a matched mode, and an opening and closing power mechanism which can open and close up and down is arranged between the upper furnace body 101 and the lower furnace body 102; the supporting table 200 comprises a lower heat insulation plate 201 and a supporting plate 202 which are arranged in the lower furnace body 102 in parallel at intervals, and a supporting column 203 for connecting and supporting the lower heat insulation plate 201, the supporting plate 202 and the lower furnace body 102, and a crucible 600 is arranged on the supporting table 200; the heating chamber 300 comprises an upper heat-insulating plate 301 and an annular side heat-insulating wall 302, heaters 304 are arranged on the inner sides of the upper heat-insulating plate 301 and the side heat-insulating wall 302, and a lifting mechanism 303 is arranged between the side heat-insulating wall 302 and the upper furnace body 101, the lifting mechanism in the embodiment can drive a guide rod to move up and down through an air cylinder, and can also drive the guide rod to move up and down through the matching of a driving motor and a bevel gear, the upper end and the lower end of the side heat-insulating wall 302 are respectively provided with a butt-joint edge 305 extending inwards, and the butt-joint edge of the side heat-insulating wall 305 is connected with a lower heat-insulating plate in a matching and overlapping manner; the crystal growth heat slow-flow dissipation assembly is arranged between the lower heat insulation plate 201 and the side heat insulation wall 302 and comprises an outer spacer 501 and an inner spacer 502, wherein the outer spacer 501 is sleeved on the lower end butt joint edge of the side heat insulation wall in a matching mode, the inner spacer 502 is arranged on the lower heat insulation plate in a matching mode in a pin joint mode, the inner spacer 502 is sleeved with the outer spacer 501 in a matching sliding fit mode, an outward extending lap joint edge 503 is arranged at the upper end of the outer spacer 501, when the side heat insulation wall 302 and the lower heat insulation plate 201 are in a separation state, the outer spacer 501 is hung on the side heat insulation wall 302 in a matching mode through the lap joint edge 503, and when the side heat insulation wall 302 and the lower heat insulation plate 201 are in a closing state, the outer spacer 501 is supported and arranged on the lower heat insulation plate 201.
The rotary power mechanism comprises a rotary shaft 505 which is pivoted on the lower furnace body, a driving gear 506 which is arranged at the top of the rotary shaft 505, a section of arc-shaped adjusting groove 507 which is arranged on the lower heat insulation plate 201, a driving arm 508 which is arranged on an inner lining corresponding to the arc-shaped adjusting groove 507, a gear ring 509 which is fixedly arranged at the lower end of the driving arm 508 and a driving motor 510, wherein the driving gear 506 is in matching meshed transmission with the gear ring 509.
The annular groove 601 is formed in the outer side of the bottom of the crucible 600, the arc-shaped groove 602 is formed in the bottom of the inner cavity of the crucible 600, the cross section of the bottom of the inner cavity of the crucible is in a wavy line shape, the annular mounting grooves 603 are uniformly distributed on the outer side wall of the crucible, the heat preservation strips 604 are further arranged on the outer side wall of the crucible, the heat preservation strips 604 are inserted in the corresponding annular mounting grooves 603 in a matching mode according to different thermal field structure distribution, and the heat preservation strips in the embodiment are made of carbon fibers.
The supporting plate 202 comprises a lower supporting plate 2021, an upper supporting ring 2022, an adjusting shaft 2023 pivoted to the middle of the supporting column, a middle supporting plate 2024 supported by a bearing 2025 and arranged at the top of the adjusting shaft, and a temperature adjusting plate 2026 arranged between the middle supporting plate and the upper supporting ring, wherein a labyrinth groove is arranged on the temperature adjusting plate 2026, the temperature adjusting plate 2023 is fixedly arranged on the adjusting shaft 2023, the top surface of the temperature adjusting plate 2026 is attached to the crucible 600, and a driving motor for driving the adjusting shaft is arranged outside the lower furnace body.
The embodiment also discloses a polycrystalline silicon ingot casting method which is a polycrystalline silicon ingot casting process performed by using the polycrystalline silicon ingot casting furnace in the embodiment.
The distribution of the whole thermal field can be rearranged through the structural design of the crucible and the supporting plate, and a dynamically variable thermal field distribution in the online production process can be formed, so that the distribution of the thermal field can be adjusted according to the process requirement, and the grain size and the crystal orientation verticality of the product are greatly improved; this application can also be through the structural design of side heat preservation wall and lower heated board, carrying out the crystallization in-process, the effectual control heat speed that loses to can adjust in real time, thereby for the quality of polycrystalline silicon provides better crystallization environment, through the design of above structure, this application can effectual improvement polycrystalline silicon product quality, thereby satisfy the further development of relevant trade, have very big market value.
The foregoing shows and describes the general principles, essential features, and advantages of the invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are merely illustrative of the principles of the invention, but that various changes and modifications may be made without departing from the spirit and scope of the invention, which fall within the scope of the invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (5)
1. The method for preparing the polycrystalline silicon ingot is characterized by adopting the following polycrystalline silicon ingot furnace, wherein the polycrystalline silicon ingot furnace comprises:
the furnace body comprises an upper furnace body and a lower furnace body which are correspondingly buckled in a matching manner, and an opening and closing power mechanism for opening and closing the upper furnace body and the lower furnace body is arranged between the upper furnace body and the lower furnace body;
the supporting table comprises a lower heat insulation plate and a supporting plate which are arranged in the lower furnace body in parallel at intervals, and a supporting column which is used for connecting and supporting the lower heat insulation plate, the supporting plate and the lower furnace body, wherein a crucible is arranged on the supporting table;
the heating cavity comprises an upper insulation board and an annular side insulation wall, heaters are arranged on the inner sides of the upper insulation board and the side insulation wall, a lifting mechanism is arranged between the side insulation wall and the upper furnace body, the upper end and the lower end of the side insulation wall are respectively provided with an inward extending butt joint edge, and the butt joint edges of the side insulation wall are connected with the lower insulation board in a matching and overlapping mode;
and a control system and a pumping and exhausting system;
the lower heat-insulation board and the side heat-insulation wall are provided with a long crystal heat slow-flow-dissipation assembly, the long crystal heat slow-flow-dissipation assembly comprises an outer spacer sleeve and an inner spacer sleeve, the outer spacer sleeve is sleeved on the lower end butt joint edge of the side heat-insulation wall in a matching mode, the inner spacer sleeve is arranged on the lower heat-insulation board in a matching mode in a pin joint mode, the inner spacer sleeve is matched with the outer spacer sleeve in a sliding fit mode and is sleeved on the outer spacer sleeve in a matching mode, an outward extending lap joint edge is arranged at the upper end of the outer spacer sleeve, when the side heat-insulation wall and the lower heat-insulation board are in a separation state, the outer spacer sleeve is hung on the side heat-insulation wall in a matching mode through the lap joint edge, and when the side heat-insulation wall and the lower heat-insulation board are in a closing state, the outer spacer sleeve is supported on the lower heat-insulation board.
2. The method for preparing the ingot of the polycrystalline silicon ingot according to claim 1, wherein the outer spacer sleeve and the inner spacer sleeve are both provided with elongated heat dissipation holes, the lower heat insulation plate is provided with a rotary power mechanism for driving the inner spacer sleeve to rotate, and the rotary power mechanism adjusts the heat dissipation capacity of the air flow between the inner spacer sleeve and the outer spacer sleeve in the crystal growth process through heat dissipation.
3. The method for preparing the polycrystalline silicon ingot casting ingot according to claim 2, wherein the rotary power mechanism comprises a rotating shaft which is pivoted on the lower furnace body, a driving gear which is arranged at the top of the rotating shaft, a section of arc-shaped adjusting groove which is formed in the lower heat insulation plate, a driving arm which is arranged on an inner bushing corresponding to the arc-shaped adjusting groove, a gear ring which is fixedly arranged at the lower end of the driving arm and a driving motor, and the driving gear is in matching and meshing transmission with the gear ring.
4. The method for preparing the ingot of the polycrystalline silicon ingot according to claim 1, wherein an annular groove is formed in the outer side of the bottom of the crucible, an arc-shaped groove is formed in the bottom of an inner cavity of the crucible, the cross section of the bottom of the inner cavity of the crucible is wavy, annular mounting grooves are uniformly formed in the outer side wall of the crucible, heat preservation strips are further arranged on the outer side wall of the crucible, and the heat preservation strips are inserted into the corresponding annular mounting grooves in a matched manner according to different distribution of thermal field structures.
5. The method for preparing the ingot of the polycrystalline silicon ingot according to claim 1, wherein the supporting plate comprises a lower supporting plate, an upper supporting ring, an adjusting shaft pivoted to the middle of the supporting column, a middle supporting plate supported on the top of the adjusting shaft through a bearing, and a temperature adjusting plate arranged between the middle supporting plate and the upper supporting ring, a labyrinth groove is formed in the temperature adjusting plate, the temperature adjusting plate is fixedly arranged on the adjusting shaft, the top surface of the temperature adjusting plate is attached to the crucible, and a driving motor for driving the adjusting shaft is arranged on the outer side of the lower furnace body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711040877.3A CN107587194B (en) | 2017-10-31 | 2017-10-31 | Polycrystalline silicon ingot casting furnace and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711040877.3A CN107587194B (en) | 2017-10-31 | 2017-10-31 | Polycrystalline silicon ingot casting furnace and method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107587194A CN107587194A (en) | 2018-01-16 |
| CN107587194B true CN107587194B (en) | 2023-03-28 |
Family
ID=61043657
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711040877.3A Active CN107587194B (en) | 2017-10-31 | 2017-10-31 | Polycrystalline silicon ingot casting furnace and method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107587194B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109295495B (en) * | 2018-11-19 | 2020-08-04 | 江苏斯力康科技有限公司 | Temperature field regulating mechanism beneficial to control of directional solidification flat liquid-solid interface |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090280050A1 (en) * | 2008-04-25 | 2009-11-12 | Applied Materials, Inc. | Apparatus and Methods for Casting Multi-Crystalline Silicon Ingots |
| CN201506708U (en) * | 2009-09-29 | 2010-06-16 | 常州天合光能有限公司 | Thermal field structure for polycrystalline ingot production furnace |
| CN101775641A (en) * | 2010-02-09 | 2010-07-14 | 宁波晶元太阳能有限公司 | Follow-up heat insulation ring thermal field structure for vertical oriented growth of polysilicon |
| CN202054926U (en) * | 2011-03-16 | 2011-11-30 | 常州市万阳光伏有限公司 | Polycrystalline silicon ingot furnace |
| CN202595340U (en) * | 2012-04-11 | 2012-12-12 | 常州天合光能有限公司 | Ingot furnace with controlled crystal growth thermal field structure |
| CN204080179U (en) * | 2014-08-07 | 2015-01-07 | 英利能源（中国）有限公司 | A kind of polycrystalline ingot furnace thermal field structure |
-
2017
- 2017-10-31 CN CN201711040877.3A patent/CN107587194B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090280050A1 (en) * | 2008-04-25 | 2009-11-12 | Applied Materials, Inc. | Apparatus and Methods for Casting Multi-Crystalline Silicon Ingots |
| CN201506708U (en) * | 2009-09-29 | 2010-06-16 | 常州天合光能有限公司 | Thermal field structure for polycrystalline ingot production furnace |
| CN101775641A (en) * | 2010-02-09 | 2010-07-14 | 宁波晶元太阳能有限公司 | Follow-up heat insulation ring thermal field structure for vertical oriented growth of polysilicon |
| CN202054926U (en) * | 2011-03-16 | 2011-11-30 | 常州市万阳光伏有限公司 | Polycrystalline silicon ingot furnace |
| CN202595340U (en) * | 2012-04-11 | 2012-12-12 | 常州天合光能有限公司 | Ingot furnace with controlled crystal growth thermal field structure |
| CN204080179U (en) * | 2014-08-07 | 2015-01-07 | 英利能源（中国）有限公司 | A kind of polycrystalline ingot furnace thermal field structure |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107587194A (en) | 2018-01-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN201195763Y (en) | Polysilicon ingot furnace | |
| EP3760767A1 (en) | Ingot furnace for directional solidification growth of crystalline silicon and application | |
| CN102732959A (en) | Polysilicon ingot furnace and polysilicon ingot casting method | |
| CN102978687B (en) | Crystal growth method of polycrystalline silicon ingot | |
| US9574825B2 (en) | Directional solidification furnace having movable heat exchangers | |
| CN103813983A (en) | Directional solidification system and method | |
| CN107587194B (en) | Polycrystalline silicon ingot casting furnace and method | |
| CN102925971B (en) | High-efficiency polycrystalline ingot casting thermal field | |
| CN102965727B (en) | Polycrystalline silicon ingot and casting method thereof | |
| CN202164380U (en) | Thermal field structure of high-yield polycrystalline silicon ingot casting furnace | |
| US20130252011A1 (en) | Multi-Crystalline Silicon Ingot And Directional Solidification Furnace | |
| CN103225106B (en) | A kind of thermal field casting high-efficiency polycrystalline | |
| US20130239620A1 (en) | Directional Solidification Furnace Having Movable Insulation System | |
| CN203144557U (en) | Bidirectional enhanced gas cooling device in crystal growth device | |
| CN201138138Y (en) | Polycrystalline silicon segregating and cogging furnace without need of moving component | |
| CN202626346U (en) | Novel mono-like crystal ingot furnace | |
| CN208104602U (en) | A kind of silicon ingot Casting Equipment | |
| CN202265626U (en) | Combustion gas heating directional solidification furnace | |
| CN203065633U (en) | Thermal field of efficient cast polycrystal | |
| CN201495105U (en) | Ingot furnace heater capable of gradient temperature control | |
| CN209740969U (en) | Air quantity adjusting device of melting and kiln protecting air pipe | |
| CN210314556U (en) | Sintering furnace for temperature-controllable single crystal production | |
| CN104451874B (en) | The preparation method of ingot furnace and silicon ingot | |
| CN205275786U (en) | Ingot furnace thermal field heat preservation | |
| CN208869720U (en) | A kind of tubular polycrystalline silicon ingot casting graphite field |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20230830 Address after: 451251 No. 9, Xingxing Road, private science and technology entrepreneurship Park, Gongyi City, Zhengzhou City, Henan Province Patentee after: HENAN HENGXING SCIENCE & TECHNOLOGY Co.,Ltd. Address before: 451200 High and New Technology Industrial Park, Gongyi City, Zhengzhou City, Henan Province Patentee before: HENAN BOYU NEW ENERGY Co.,Ltd. |