CN202054926U - Polycrystalline silicon ingot furnace - Google Patents
Polycrystalline silicon ingot furnace Download PDFInfo
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- CN202054926U CN202054926U CN2011200687383U CN201120068738U CN202054926U CN 202054926 U CN202054926 U CN 202054926U CN 2011200687383 U CN2011200687383 U CN 2011200687383U CN 201120068738 U CN201120068738 U CN 201120068738U CN 202054926 U CN202054926 U CN 202054926U
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- furnace body
- polycrystalline silicon
- heater
- silicon ingot
- crucible
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Abstract
The utility model relates to a polycrystalline silicon ingot furnace, which comprises a furnace body and a support frame, wherein the furnace body is fixed on the support frame, a support plate is arranged in the furnace body, a crucible is arranged on the support frame, a heater is arranged outside the crucible, a reflecting screen is buckled and covered outside the heater, heat insulation and moisture preserving materials are filled between the furnace body and the reflecting screen, the furnace body comprises an upper furnace body and a lower furnace body, lifting devices are connected between the upper furnace body and the lower furnace body, and one end of the upper furnace body is provided with a vacuum interface. The lower furnace body is controlled to ascend or descend through the lifting device, the crucible containing polycrystalline silicon ingots can be conveniently put in or taken out, the safety of operators is effectively protected, simultaneously, the graphite resistance heater with the gradually increased thickness from top to bottom is adopted, the production speed and the production quality of the polycrystalline silicon ingots are improved, the structure of the furnace body is simplified, and the service life of equipment is prolonged.
Description
Technical field
The utility model relates to field polysilicon, relates in particular to a kind of polycrystalline silicon ingot or purifying furnace.
Background technology
Silicon is a kind of important electron, optical material, plays an important role in wide fields such as information, communication, space flight, environment protection, and the market requirement is increasing.Just can not satisfy the demand far away as solar cell silicon, the silicon for solar cell source has at present: the one, and polycrystalline silicon semiconductor elbow material, particle; The 2nd, the polysilicon of the solar level that the unnecessary throughput of polysilicon is produced; The 3rd, material end to end, flavoring food that electronic-grade polycrystalline silicon is produced.
Polycrystalline silicon ingot or purifying furnace is mainly used in ingot ways and produces silicon semiconductor material at present, traditional polycrystalline silicon ingot or purifying furnace is made up of body of heater and bell, usually bell is positioned at the body of heater upper end, electric heater is distributed in the crucible periphery of burner hearth, exists the loading and unloading material inconvenient, the live components underlying of automatically controlled heating and Controlling System, poor safety performance, thermally-insulated body is provided with irrational distribution in the body of heater, makes melting ingot casting polysilicon speed slow, and service life of equipment is short.
The utility model content
The technical problems to be solved in the utility model is: provide a kind of and can effectively protect operator safety, improve the speed and the quality of producing polycrystalline silicon ingot casting, simplify furnace binding, prolong the polycrystalline silicon ingot or purifying furnace of service life of equipment.
In order to overcome the defective that exists in the background technology, the technical scheme that its technical problem that solves the utility model adopts is: a kind of polycrystalline silicon ingot or purifying furnace, comprise body of heater, support, described body of heater is fixed on the support, is provided with back up pad in the described body of heater, and described back up pad is provided with crucible, described body of heater comprises upper furnace body, lower furnace body, be connected with lifting device between described upper furnace body, the lower furnace body, described crucible is outside equipped with calorifier, and the outer button of described calorifier is covered with radiation shield.
According to another embodiment of the present utility model, a kind of polycrystalline silicon ingot or purifying furnace comprises that further described lifting device is arranged on the support, comprise base, screw mandrel, the solid seat of side, described base and support are fixed as one, be provided with motor and shaft joint in the base, the solid seat of described side is arranged on the lower furnace body, and described base is connected by screw mandrel with the solid seat of side.
According to another embodiment of the present utility model, a kind of polycrystalline silicon ingot or purifying furnace comprises that further described lifting device is three, is triangle distribution at the body of heater periphery.
According to another embodiment of the present utility model, a kind of polycrystalline silicon ingot or purifying furnace comprises that further described upper furnace body and lower furnace body periphery are provided with buckle.
According to another embodiment of the present utility model, a kind of polycrystalline silicon ingot or purifying furnace comprises that further described upper furnace body is provided with top cover, and described top cover is provided with the shielding gas import.
According to another embodiment of the present utility model, a kind of polycrystalline silicon ingot or purifying furnace comprises that further described upper furnace body one end is provided with vacuum interface.
According to another embodiment of the present utility model, a kind of polycrystalline silicon ingot or purifying furnace comprises that further described calorifier is the terraced calorifier of graphite temperature, and the thickness of the resistance of calorifier is cumulative from top to bottom.
The utility model has solved the defective that exists in the background technology, rises or descends by lifting device control lower furnace body, can put into or take out the crucible that polycrystal silicon ingot is housed easily, protects operator's safety effectively.Simultaneously, adopt the cumulative graphite resistance calorifier of thickness from up to down, owing to the increase of resistance value with graphite thickness reduces, when therefore switching on, heating graphite device upper end thermal value height, the lower end thermal value is low, from up to down the Gradient distribution of formation temperature.In silicon liquid cooling solidification stages, this effect makes the silicon liquid in the crucible keep directed thermograde from top to bottom, and promptly silicon liquid just can be realized the gradient cooled and solidified under static state, and does not need directed moving; Because body of heater inside relatively moves without any assembly, makes the silicon material in whole purification process, vibration does not wait disturbing influence, thereby reaches good purification and crystal growth effect.
Description of drawings
Below in conjunction with drawings and Examples the utility model is further specified.
Fig. 1 is the structural representation of preferred embodiment of the present utility model;
Wherein: 1, support, 2, upper furnace body, 3, lower furnace body, 4, crucible, 5, calorifier; 6, back up pad, 7, adiabatic material which can retain moisture, 8, radiation shield, 9, base, 10, the solid seat of side; 11, screw mandrel, 12, buckle, 13, top cover, 14, the shielding gas interface, 15, vacuum interface.
Embodiment
With preferred embodiment the utility model is described in further detail in conjunction with the accompanying drawings now.These accompanying drawings are the synoptic diagram of simplification, basic structure of the present utility model only is described in a schematic way, so it only show the formation relevant with the utility model.
A kind of polycrystalline silicon ingot or purifying furnace as shown in Figure 1, comprise body of heater, support 1, described body of heater is fixed on the support 1, be provided with back up pad 6 in the described body of heater, described back up pad 6 is provided with crucible 4, and described body of heater comprises upper furnace body 2, lower furnace body 3, be connected with lifting device between described upper furnace body 2, the lower furnace body 3, described upper furnace body 2 one ends are provided with vacuum interface 15, and described crucible 4 is outside equipped with calorifier 5, and described calorifier 5 outer buttons are covered with radiation shield 8.Also be filled with adiabatic material which can retain moisture 7 between described body of heater and the radiation shield 8.
Described lifting device is arranged on the support 1, comprise base 9, screw mandrel 11, the solid seat 10 of side, described base 9 is fixed as one with support 1, is provided with motor and shaft joint in the base 9, the solid seat 10 of described side is arranged on the lower furnace body 3, and the solid seat of described base 9 and side 10 is connected by screw mandrel 11.Described lifting device is three, is triangle distribution at the body of heater periphery.Motor is shaft joint and the screw mandrel 11 on other two bases of both sides drive by two shaft joints and flexible axle, makes to be screw mandrel 11 synchronization liftings of triangle distribution at the body of heater periphery, steadily opens, closes lower furnace body 3.After closing, upper furnace body 2 and lower furnace body 3 lockings are integral with buckle 12.
Add man-hour, in crucible 4, install the silicon raw material that needs processing, crucible 4 is placed on the back up pad 6, connecting tube is installed,, feed shielding gas, and carry out vacuum displacement by lifting device sealing body of heater.Set PID sequence of control and parameter, enter the temperature rise period, molten silicon.According to the needs of technology, can in molten silicon, carry out additive or be blown into refining operations such as gas.After refining finishes, accurately control cooling rate, with the terraced calorifier control of graphite temperature thermal field, silicon is begun at the bottom of crucible solidification and crystallization, solid-liquid interface moves up under the thermograde thermal field lentamente, and silicon liquid crystalline growth gradually forms polysilicon, the impurity that segregation coefficient is little takes the top of ingot to, reaches the further purification of silicon and the purpose of polycrystalline silicon ingot casting.
After the complete crystallization of silicon in the crucible 4, cool to certain stage, keep constant temperature for some time, carry out crystalline annealing with digestion stress.Further cool to predetermined temperature, discharging cuts the impurity enriched silicon material such as top of polycrystal silicon ingot, obtains the high purity polycrystalline silicon ingot.
With above-mentioned foundation desirable embodiment of the present utility model is enlightenment, and by above-mentioned description, the related work personnel can carry out various change and modification fully in the scope that does not depart from this utility model technological thought.The technical scope of this utility model is not limited to the content on the specification sheets, must determine its technical scope according to the claim scope.
Claims (7)
1. polycrystalline silicon ingot or purifying furnace, comprise body of heater, support (1), described body of heater is fixed on the support (1), be provided with back up pad (6) in the described body of heater, described back up pad (6) is provided with crucible (4), it is characterized in that: described body of heater comprises upper furnace body (2), lower furnace body (3), and described upper furnace body (2), lower furnace body are connected with lifting device between (3), described crucible (4) is outside equipped with calorifier (5), and the outer button of described calorifier (5) is covered with radiation shield (8).
2. a kind of polycrystalline silicon ingot or purifying furnace as claimed in claim 1, it is characterized in that: described lifting device is arranged on the support (1), comprise base (9), screw mandrel (11), the solid seat of side (10), described base (9) is fixed as one with support (1), base is provided with motor and shaft joint in (9), the solid seat of described side (10) is arranged on the lower furnace body (3), and described base (9) is connected by screw mandrel (11) with the solid seat of side (10).
3. a kind of polycrystalline silicon ingot or purifying furnace as claimed in claim 1 is characterized in that: described lifting device is three, is triangle distribution at the body of heater periphery.
4. a kind of polycrystalline silicon ingot or purifying furnace as claimed in claim 1 is characterized in that: described upper furnace body (2) is provided with buckle (12) with lower furnace body (3) periphery.
5. a kind of polycrystalline silicon ingot or purifying furnace as claimed in claim 1 is characterized in that: described upper furnace body (2) is provided with top cover (13), and described top cover (13) is provided with shielding gas import (14).
6. a kind of polycrystalline silicon ingot or purifying furnace as claimed in claim 1 is characterized in that: described upper furnace body (2) one ends are provided with vacuum interface (15).
7. a kind of polycrystalline silicon ingot or purifying furnace as claimed in claim 1 is characterized in that: described calorifier (5) is the terraced calorifier of graphite temperature, and the thickness of the resistance of calorifier (5) is cumulative from top to bottom.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011200687383U CN202054926U (en) | 2011-03-16 | 2011-03-16 | Polycrystalline silicon ingot furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011200687383U CN202054926U (en) | 2011-03-16 | 2011-03-16 | Polycrystalline silicon ingot furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202054926U true CN202054926U (en) | 2011-11-30 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011200687383U Expired - Fee Related CN202054926U (en) | 2011-03-16 | 2011-03-16 | Polycrystalline silicon ingot furnace |
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| Country | Link |
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| CN (1) | CN202054926U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107587194A (en) * | 2017-10-31 | 2018-01-16 | 河南省博宇新能源有限公司 | Polycrystal silicon ingot ingot furnace and method |
-
2011
- 2011-03-16 CN CN2011200687383U patent/CN202054926U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107587194A (en) * | 2017-10-31 | 2018-01-16 | 河南省博宇新能源有限公司 | Polycrystal silicon ingot ingot furnace and method |
| CN107587194B (en) * | 2017-10-31 | 2023-03-28 | 河南省博宇新能源有限公司 | Polycrystalline silicon ingot casting furnace and method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20111130 Termination date: 20150316 |
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| EXPY | Termination of patent right or utility model |