CN117166038A - Ingot furnace thermal field structure and method for improving cast monocrystalline silicon ingot yield - Google Patents
Ingot furnace thermal field structure and method for improving cast monocrystalline silicon ingot yield Download PDFInfo
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- CN117166038A CN117166038A CN202311035868.0A CN202311035868A CN117166038A CN 117166038 A CN117166038 A CN 117166038A CN 202311035868 A CN202311035868 A CN 202311035868A CN 117166038 A CN117166038 A CN 117166038A
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- heat insulation
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- 238000000034 method Methods 0.000 title claims abstract description 36
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 23
- 239000013078 crystal Substances 0.000 claims abstract description 61
- 238000009413 insulation Methods 0.000 claims abstract description 50
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 37
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 37
- 239000010439 graphite Substances 0.000 claims abstract description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 20
- 239000010703 silicon Substances 0.000 claims abstract description 20
- 238000005266 casting Methods 0.000 claims abstract description 14
- 239000007787 solid Substances 0.000 claims abstract description 13
- 238000002844 melting Methods 0.000 claims abstract description 11
- 230000008018 melting Effects 0.000 claims abstract description 11
- 230000033001 locomotion Effects 0.000 claims abstract description 6
- 230000005855 radiation Effects 0.000 claims abstract description 6
- 239000002210 silicon-based material Substances 0.000 claims description 15
- 239000007788 liquid Substances 0.000 claims description 11
- 238000001816 cooling Methods 0.000 claims description 10
- 239000010453 quartz Substances 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 238000000137 annealing Methods 0.000 claims description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 6
- 238000010899 nucleation Methods 0.000 claims description 6
- 238000007711 solidification Methods 0.000 claims description 6
- 230000008023 solidification Effects 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 230000017525 heat dissipation Effects 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 230000014759 maintenance of location Effects 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 230000008569 process Effects 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 4
- 238000010309 melting process Methods 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 230000008901 benefit Effects 0.000 description 5
- 230000009467 reduction Effects 0.000 description 4
- 230000008646 thermal stress Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000035755 proliferation Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Abstract
The invention discloses a thermal field structure of an ingot furnace and a method for improving the yield of cast monocrystalline silicon ingots. The heat insulation plate is hoisted by a graphite soft rope or a hard suspender and is driven by an external power unit of the heat insulation cage to move up and down. In the melting process, the heat insulation plate is positioned at a position for protecting seed crystals from being melted; along with the upward movement of the crystal growth interface, the heat insulation plate gradually moves upwards. And the heat radiation of the side heater to the solid silicon part is reduced through the shielding effect of the heat insulation plate, so that the radial temperature gradient in the solid silicon is reduced. The invention provides a new thermal field structure for casting a quasi-single crystal and a use method thereof, which are beneficial to the accurate control of the melting height of seed crystals in the melting process; in the crystal growth process, the dislocation increment in the solid silicon after the crystal growth is finished is reduced, and the dislocation density of the silicon ingot is reduced.
Description
Technical Field
The invention relates to the technical field of monocrystalline silicon casting, in particular to a thermal field structure of an ingot furnace and a method for improving the yield of cast monocrystalline silicon ingots.
Background
Monocrystalline silicon materials represent an absolute market advantage in solar cell applications. Czochralski (Cz) is the main method for obtaining single crystal silicon materials, but the pulling method has the disadvantages of relatively high energy consumption, low productivity and the like, so that the single crystal by casting method has been receiving attention from the industry because of the advantages of low energy consumption, large single ingot quality, suitability for processing square ingots and the like. The casting method is to adopt a casting furnace to carry out directional solidification to form the monocrystalline silicon with single crystal orientation, less crystal boundary and lower dislocation density.
The equipment for producing the monocrystalline silicon by adopting the casting method is completed after a small amount of transformation is carried out on the polycrystalline ingot furnace, and the weight of a single monocrystalline silicon ingot exceeds 1 ton. Especially, compared with a single crystal furnace of a drawing method, the method has much higher tolerance to impurities in a silicon material compared with the strict requirements of impurities in the single crystal silicon material, so that the single crystal silicon of the casting method is a production mode with the advantages of cost and capacity expansion.
At present, the casting method monocrystalline silicon still has some defects, the control requirement on a thermal field is strict in the process of directional solidification, and the improper solid-liquid interface shape easily causes more side invasion or thicker requirement on side edge skin, so that the overall monocrystalline rate of the silicon ingot is reduced; the dislocation of the interface increases due to the non-uniformity and instability of the solid-liquid interface, and the yield of the silicon ingot also decreases. Dislocations during quasi-monocrystalline ingot are partly derived from primary dislocations during crystal growth and partly from dislocation proliferation due to thermal stress in the solid part after solidification.
In order to solve the problem of great dislocation increment in the existing monocrystalline-like ingot casting process. The relatively large radial temperature gradient in solid silicon is an important cause of dislocation increment in the single crystal-like structure during crystal growth and temperature reduction, so that the reduction of the radial temperature gradient during crystal growth and temperature reduction is expected to reduce the dislocation quantity in the single crystal-like structure.
Therefore, an ingot furnace thermal field structure for optimizing a thermal field, particularly for improving the stability of a solid-liquid interface and reducing the transverse thermal stress in solid silicon in the process of crystal growth, and finally improving the yield of cast monocrystalline silicon and a method for improving the yield of cast monocrystalline silicon ingot are needed to be researched.
Disclosure of Invention
The invention aims to solve the problems in the background art and provides a thermal field structure of an ingot furnace and a method for improving the yield of cast monocrystalline silicon ingots.
In order to solve the technical problems, the technical scheme provided by the invention is as follows: the utility model provides an ingot furnace thermal field structure, includes the furnace body, the top is equipped with power unit in the furnace body, be equipped with movable thermal-insulated tray in the furnace body, be equipped with the thermal-insulated cage of graphite felt on the movable thermal-insulated tray, be equipped with quartz crucible in the thermal-insulated cage of graphite felt, the quartz crucible outside is equipped with the graphite backplate, the top is equipped with the top heater in the thermal-insulated cage of graphite felt, and the side is equipped with the side heater, be equipped with a mobilizable cyclic annular heat insulating board between side heater and the graphite backplate, the furnace body top is equipped with power unit, the heat insulating board is through hanging a hoist and mount, power unit is connected at a hoist and mount, the heat insulating board by power unit drives, through hanging a hoist and mount and reciprocate.
As a preferable scheme, the hanging piece is a graphite hanging rod or a hanging rope.
As a preferable scheme, the heat insulation plate is arranged around the graphite guard plate and is annular, and a gap of 2 cm-5 cm is reserved between the heat insulation plate and the side heater and the graphite guard plate.
As a preferable scheme, the heat insulation plate is made of high-temperature-resistant graphite felt, the thickness is 1 cm-5 cm, and the whole weight is not more than 10kg.
As a preferable scheme, the distance of the up-and-down movement of the heat insulation plate is 0-50 cm.
As a preferred solution, the power unit is powered by an electric motor.
The method for improving the yield of the cast monocrystalline silicon ingot comprises the following steps:
1) And (3) equipment refitting: a movable annular heat insulation plate is additionally arranged on an ingot furnace for casting single crystals, and a graphite suspender, a power conversion device, a power unit and the like of an assembly sleeve are additionally arranged;
2) And (2) charging: laying seed crystals, filling polycrystalline silicon materials, and placing the crucible into an ingot furnace;
3) Heating: the annular heat shield is lowered to a low position so as not to shield the side heater and to protect the seed crystal from melting. Heating the silicon material to near the melting temperature; opening the bottom heat insulation tray to accelerate the bottom to radiate heat through the radiating block, and melting the polysilicon material from top to bottom, wherein the annular heat insulation plate provides a stable thermal field environment to protect the monocrystalline seed crystal part;
4) Cooling and seeding: when the silicon material is melted to the retention height of 10-20cm, reducing the power of a side heater and a top heater, reducing the temperature of the silicon liquid, and starting seeding;
5) And (3) solidification and growth: as the bottom heat insulation tray is opened continuously, more heat is dissipated by the heat dissipation block, and the monocrystalline-like crystal starts to directionally solidify and grow from bottom to top;
6) Heat insulation: the position of the movable annular heat insulating plate and the solid-liquid interface keeps the height difference of (+/-) (1-5 cm), and the movable annular heat insulating plate moves from bottom to top along with the growth of crystals; the annular heat-insulating plate shields the side heater from heat radiation to the side graphite shield (the portion corresponding to the solid silicon crystal);
7) Annealing and cooling: and after the crystal growth is completed, sequentially entering an annealing and cooling procedure.
As a preferable scheme, the height difference between the upper edge of the heat insulation plate and the seed crystal in the quartz crucible is in the range of +1cm.
As a preferable scheme, the height difference between the upper edge of the heat insulation plate and the crystal growth interface is within +/-3 cm.
Compared with the prior art, the invention has the advantages that: the design of the movable heat insulation ring and the matched process method are that the heat insulation ring is positioned at the bottom of the crucible in the process of melting silicon material, so that the heat insulation ring has a good protection effect on the reservation of seed crystals and has good uniformity of melted seed crystals; the side moving heat insulating plate moves upwards along with the growth of crystals, and the direct radiation power of the side heater to the solid silicon is shielded, so that the radial thermal gradient in the solid silicon is reduced, and the effect of reducing dislocation increment is achieved. The method is optimized for a thermal field, and particularly has very good improvement effects on the stability improvement of a solid-liquid interface and the reduction of transverse thermal stress in solid silicon in the process of crystal growth, and finally, the yield of casting monocrystalline silicon is improved.
Drawings
Fig. 1 and 2 are schematic structural views and use state diagrams of the present invention.
FIG. 3 is a thermal field distribution of silicon crystals in a crucible without an insulating plate.
FIG. 4 is a thermal field distribution of silicon crystals in a crucible with an insulating plate according to the present invention.
Fig. 5 and 6 are side PL images of a silicon ingot after the evolution of the present invention.
As shown in the figure: 1. the device comprises a power unit, 2, a hanging piece, 3, a side heater, 4, a heat insulation plate, 5, a movable heat insulation tray, 6, seed crystals, 7, a polycrystalline silicon material, 8, a power conversion device, 9, solid monocrystalline silicon, 10, polycrystalline side skins, 11, liquid silicon, 12 and a top heater.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. The components of the embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
In the description of the embodiments of the present invention, it should be noted that, if the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. indicate an azimuth or a positional relationship based on that shown in the drawings, or an azimuth or a positional relationship in which the product of the present invention is conventionally put when used, it is merely for convenience of describing the present invention and simplifying the description, and it does not indicate or imply that the apparatus or element to be referred to must have a specific azimuth, be configured and operated in a specific azimuth, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," "third," and the like are used merely to distinguish between descriptions and should not be construed as indicating or implying relative importance.
Furthermore, the terms "horizontal," "vertical," "overhang" and the like, if any, do not denote a requirement that the component be absolutely horizontal or overhang, but rather may be slightly inclined. As "horizontal" merely means that its direction is more horizontal than "vertical", and does not mean that the structure must be perfectly horizontal, but may be slightly inclined.
In the description of the embodiments of the present invention, "plurality" means at least 2.
In the description of the embodiments of the present invention, it should also be noted that, unless explicitly specified and limited otherwise, the terms "disposed," "mounted," "connected," and "connected" should be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
The utility model provides a combined drawing, a ingot furnace thermal field structure, includes the furnace body, the top is equipped with power unit 1 in the furnace body, be equipped with movable thermal-insulated tray 5 in the furnace body, be equipped with the thermal-insulated cage of graphite felt on the movable thermal-insulated tray 5, be equipped with quartz crucible in the thermal-insulated cage of graphite felt, the quartz crucible outside is equipped with the graphite backplate, the top is equipped with top heater 12 in the thermal-insulated cage of graphite felt, and the side is equipped with side heater 3, be equipped with a mobilizable annular heat insulating board 4 between side heater 3 and the graphite backplate, the furnace body top is equipped with power unit 1, heat insulating board 4 is through hanging 2 hoist and mount, power unit 1 is connected at hanging 2 tops, heat insulating board 4 by power unit 1 drives, through hanging 2 hoist and mount the reciprocating.
The hanging piece 2 is a graphite hanging rod or a hanging rope.
The heat insulation plate 4 is arranged around the graphite guard plate and is annular, and a gap of 2 cm-5 cm is reserved between the heat insulation plate and the side heater 3 and the graphite guard plate.
The heat insulation board 4 is made of high-temperature-resistant graphite felt, the thickness is 1 cm-5 cm, and the whole weight is not more than 10kg.
The distance of the up-and-down movement of the heat insulation plate 4 is 0-50 cm.
The power unit 1 is powered by an electric motor.
The method for improving the yield of the cast monocrystalline silicon ingot comprises the following steps:
1) And (3) equipment refitting: a movable annular heat insulation plate 4 is additionally arranged on an ingot furnace for casting single crystals, and a matched graphite suspender, a power conversion device 8, a power unit 1 and the like are additionally arranged;
2) And (2) charging: laying seed crystal 6, loading polycrystalline silicon material 7, and placing the crucible into an ingot furnace;
3) Heating: the annular heat shield 4 is lowered to a low position so as not to shield the side heater and to protect the seed crystal 6 from melting. Heating the silicon material to near the melting temperature; opening the bottom heat insulation tray to accelerate the bottom to radiate heat through the heat radiation block, wherein the polysilicon material 7 starts to melt from top to bottom, and the annular heat insulation plate 4 provides a stable thermal field environment to protect the monocrystalline seed crystal 6 from being partially reserved;
4) Cooling and seeding: when the silicon material is melted to the retention height of 10-20cm of the seed crystal 6, the power of the side heater and the top heater 12 is reduced, the temperature of the silicon liquid is reduced, and seeding is started;
5) And (3) solidification and growth: as the bottom heat insulation tray is opened continuously, more heat is dissipated by the heat dissipation block, and the monocrystalline-like crystal starts to directionally solidify and grow from bottom to top;
6) Heat insulation: the position of the movable annular heat insulation plate 4 and the solid-liquid interface keeps the height difference of (+/-) (1-5 cm), and moves from bottom to top along with the growth of crystals; the annular heat insulating plate 4 shields the side heater from heat radiation to the side graphite shield (the portion corresponding to the solid silicon crystal);
7) Annealing and cooling: and after the crystal growth is completed, sequentially entering an annealing and cooling procedure.
The height difference between the upper edge of the heat insulation plate 4 and the seed crystal 6 in the quartz crucible is within +1cm.
The height difference range of the upper edge part of the heat insulation plate 4 and the crystal growth interface is +/-3 cm.
When the invention is implemented, 1) equipment is refitted, a movable annular heat insulation plate is additionally arranged on an ingot furnace for casting single crystals, the size of a plate is 30cm or 132cm or 3cm, the height is 30cm, and four graphite heat insulation felts with the thickness of 3cm are assembled into an annular shape, surround a crucible and a graphite protection plate crucible, keep a gap with the protection plate for 2cm, and are convenient for loading. The distance between the heat insulating plate and the side heater is 5cm. And a matched graphite suspender, an external power conversion device of a heat insulation cage, an external power unit of a furnace and the like are additionally arranged.
2) After the ingot furnace is heated to 1000 ℃ and empty firing preparation is completed, seed crystals are paved in the crucible, about 1200kg of materials are loaded, the height of the annular heat insulation plate is reduced after the ingot furnace is fed, and the top of the heat insulation plate is level to the seed crystals in the crucible.
3) The heating program was started, the temperature was raised to 1450 ℃, and melting was started.
4) During the melting process, the remaining height of the melt was detected using a quartz rod to about 10-20mm of the seed crystal remaining.
5) And entering a crystal growth procedure, lowering the bottom heat dissipation plate, conducting heat downwards through the heat dissipation DS block, and starting crystal growth.
6) When the crystal growth height is more than 2cm, starting an upward movement program of the annular heat insulation plate, wherein the upward uniform movement speed is basically the same as the crystal growth speed, and the control speed range is 8-12mm/hour.
7) And after the crystal growth is finished, sequentially entering an annealing and cooling procedure.
The invention and its embodiments have been described above with no limitation, and the actual construction is not limited to the embodiments of the invention as shown in the drawings. In summary, if one of ordinary skill in the art is informed by this disclosure, a structural manner and an embodiment similar to the technical solution will not be creatively devised without departing from the gist of the present invention, and the structural manner and the embodiment are all intended to be within the protection scope of the present invention.
Claims (9)
1. The utility model provides an ingot furnace thermal field structure which characterized in that: the furnace comprises a furnace body, the top is equipped with power unit in the furnace body, be equipped with movable thermal-insulated tray in the furnace body, be equipped with the thermal-insulated cage of graphite felt on the movable thermal-insulated tray, be equipped with quartz crucible in the thermal-insulated cage of graphite felt, the quartz crucible outside is equipped with the graphite backplate, the top is equipped with the top heater in the thermal-insulated cage of graphite felt, and the side is equipped with the side heater, be equipped with a mobilizable annular heat insulating board between side heater and the graphite backplate, the furnace body top is equipped with power unit, the heat insulating board is through hanging a hoist and mount, hang a top connection power unit, the heat insulating board by power unit drives, through hanging a hoist and mount and reciprocate.
2. The ingot furnace thermal field structure of claim 1, wherein: the hanging piece is a graphite hanging rod or a hanging rope.
3. The ingot furnace thermal field structure of claim 1, wherein: the heat insulation plate is arranged around the graphite guard plate and is annular, and a gap of 2 cm-5 cm is reserved between the heat insulation plate and the side heater and the graphite guard plate.
4. A thermal field structure for an ingot furnace as set forth in claim 3, wherein: the heat insulation plate is made of high-temperature-resistant graphite felt, the thickness is 1 cm-5 cm, and the whole weight is not more than 10kg.
5. The ingot furnace thermal field structure of claim 4, wherein: the distance of the up-and-down movement of the heat insulation plate is 0-50 cm.
6. The ingot furnace thermal field structure of claim 1, wherein: the power unit is powered by a motor.
7. The method for improving the yield of the cast monocrystalline silicon ingot is characterized by comprising the following steps of:
1) And (3) equipment refitting: a movable annular heat insulation plate is additionally arranged on an ingot furnace for casting single crystals, and a graphite suspender, a power conversion device, a power unit and the like of an assembly sleeve are additionally arranged;
2) And (2) charging: laying seed crystals, filling polycrystalline silicon materials, and placing the crucible into an ingot furnace;
3) Heating: the annular heat shield is lowered to a low position so as not to shield the side heater and to protect the seed crystal from melting. Heating the silicon material to near the melting temperature; opening the bottom heat insulation tray to accelerate the bottom to radiate heat through the radiating block, and melting the polysilicon material from top to bottom, wherein the annular heat insulation plate provides a stable thermal field environment to protect the monocrystalline seed crystal part;
4) Cooling and seeding: when the silicon material is melted to the retention height of 10-20cm, reducing the power of a side heater and a top heater, reducing the temperature of the silicon liquid, and starting seeding;
5) And (3) solidification and growth: as the bottom heat insulation tray is opened continuously, more heat is dissipated by the heat dissipation block, and the monocrystalline-like crystal starts to directionally solidify and grow from bottom to top;
6) Heat insulation: the position of the movable annular heat insulating plate and the solid-liquid interface keeps the height difference of (+/-) (1-5 cm), and the movable annular heat insulating plate moves from bottom to top along with the growth of crystals; the annular heat-insulating plate shields the side heater from heat radiation to the side graphite shield (the portion corresponding to the solid silicon crystal);
7) Annealing and cooling: and after the crystal growth is completed, sequentially entering an annealing and cooling procedure.
8. The method for improving the yield of cast monocrystalline silicon ingots according to claim 7, wherein the method comprises the following steps: the height difference range between the upper edge of the heat insulation plate and the seed crystal in the quartz crucible is +1cm.
9. The method for improving the yield of cast monocrystalline silicon ingots according to claim 7, wherein the method comprises the following steps: the height difference range of the upper edge part of the heat insulation plate and the crystal growth interface is +/-3 cm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311035868.0A CN117166038A (en) | 2023-08-17 | 2023-08-17 | Ingot furnace thermal field structure and method for improving cast monocrystalline silicon ingot yield |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311035868.0A CN117166038A (en) | 2023-08-17 | 2023-08-17 | Ingot furnace thermal field structure and method for improving cast monocrystalline silicon ingot yield |
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| CN117166038A true CN117166038A (en) | 2023-12-05 |
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| CN202311035868.0A Pending CN117166038A (en) | 2023-08-17 | 2023-08-17 | Ingot furnace thermal field structure and method for improving cast monocrystalline silicon ingot yield |
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| Country | Link |
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| CN (1) | CN117166038A (en) |
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- 2023-08-17 CN CN202311035868.0A patent/CN117166038A/en active Pending
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