CN202465942U - Device for preparing casting monocrystalline silicon - Google Patents
Device for preparing casting monocrystalline silicon Download PDFInfo
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- CN202465942U CN202465942U CN2012200357231U CN201220035723U CN202465942U CN 202465942 U CN202465942 U CN 202465942U CN 2012200357231 U CN2012200357231 U CN 2012200357231U CN 201220035723 U CN201220035723 U CN 201220035723U CN 202465942 U CN202465942 U CN 202465942U
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- heater
- monocrystalline silicon
- crucible
- casting monocrystalline
- thermal baffle
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Abstract
The utility model discloses a device for preparing casting monocrystalline silicon, which comprises a furnace body, a crystal seeding assembly, a gas guide shell, a heat insulation assembly mounted in the furnace body, and a crucible and a heater placed in the heat insulation assembly, wherein one end of the gas guide shell is inserted into the heat insulation assembly, the other end of the gas guide shell extends to the outside of the furnace body, the crystal seeding assembly comprises a clamping head used for clamping seed crystal and a driving part used for driving the clamping head, and the clamping head is located above the crucible. By adopting the device for preparing casting monocrystalline silicon to prepare casting monocrystalline silicon, the cost is low.
Description
[technical field]
The utility model belongs to the solar-photovoltaic technology field, is specifically related to a kind of device for preparing casting monocrystalline silicon.
[background technology]
At present, using the most general solar cell material is crystalline silicon material, comprises silicon single crystal and polycrystalline silicon material, and the most outstanding characteristics of crystal silicon solar energy battery are its stability and high efficiency property.
Sun power mainly makes through vertical pulling method (CZ method) with silicon single crystal at present, has low defective high-efficiency characteristics, and can form the texture of pyramid through the method for alkali making herbs into wool, improves the absorption to light, thereby improves transformation efficiency.But also there is the higher shortcoming of production cost in silicon single crystal simultaneously.Polysilicon mainly obtains through the method for directional freeze (casting), and it has captured photovoltaic market over half with the lower advantage of production cost.But have a large amount of dislocations and crystal boundary in the polysilicon, thereby they introduce the efficiency of conversion that deep energy level reduces the diffusion length reduction polysilicon solar cell of minority carrier with impurity effect meeting in silicon.In addition, owing to have a plurality of grain orientations in the polysilicon, efficient alkali etching method is not suitable for polysilicon chip, and above factor makes that the efficiency of conversion of polycrystal silicon cell is lower 1-2 percentage point than monocrystalline silicon battery.Owing to contain a large amount of crystal boundaries and dislocation in the polysilicon, cause physical strength low simultaneously, make polysilicon chip broken easily in production, processing, cell preparation and component groups process of assembling, increase production cost than silicon single crystal.At present, casting monocrystalline silicon can battery sheet efficiency of conversion advantage and the low advantages of Foundry Production cost high, that physical strength is high get up silicon single crystal very much, becomes the emphasis of research.
At present, BP Solar company has applied for utilizing the patented claim of casting manufacture order crystal silicon (application number: 200780002763.8), its basic thought has been to add seed crystal in the bottom of crucible; Filling silicon material on seed crystal again; In the process of silicon raw material fusing, the fusing of control seed crystal is that the part of seed crystal or seed crystal remains solid-state; In the refrigerative process; Accurate monocrystalline is along the crystal orientation crystallization of seed crystal, and the crystalline defect concentration that this method is produced is lower, also is improved by the Solar cell performance of this accurate monocrystalline manufacturing.But this method need add extra single crystal seed, has directly increased the production cost of casting; Simultaneously, the fusing mode of this method is also had higher requirement to the coating of crucible inside, indirect increase production cost.
Therefore, need further exploitation to use directional solidification method to prepare the device of casting monocrystalline silicon, reduce production costs.
[utility model content]
Based on this, be necessary to provide the device of the lower preparation casting monocrystalline silicon of a kind of production cost.
A kind of device for preparing casting monocrystalline silicon; Comprise body of heater, seeding assembly, gas flow guiding tube, be installed in insulating assembly in the said body of heater, be placed on crucible and well heater in the said insulating assembly; One end of said gas flow guiding tube is interspersed in said insulating assembly; The other end of said gas flow guiding tube extends to outside the said body of heater, and said seeding assembly comprises the clamping head that is used for the clamping seed crystal and be used to drive the actuator of said clamping head that said clamping head is positioned at the top of said crucible.
In a preferred embodiment, said seeding assembly also comprises connecting rod, and said actuator is installed on said insulating assembly or the said body of heater, and said connecting rod connects said clamping head and said actuator.
In a preferred embodiment; The device of said preparation casting monocrystalline silicon also comprises lifting subassembly and suspension assembly; Said insulating assembly comprises following thermal baffle and the top thermal baffle that is arranged at said side heat-insulation cage two ends around the side heat-insulation cage around the said crucible, respectively; Said thermal baffle down and said body of heater are affixed, and said top thermal baffle is fixed to said body of heater through said suspension assembly, and said side heat-insulation cage is connected to body of heater through said lifting subassembly; Said lifting subassembly drives said side heat-insulation cage towards away from the direction motion of descending thermal baffle, makes between said side heat-insulation cage and the said following thermal baffle and forms heat dissipation channel.
In a preferred embodiment, the device of said preparation casting monocrystalline silicon also comprises the monitor of the upgrowth situation that is used to monitor the silicon single crystal of accommodating in the said crucible.
In a preferred embodiment, said monitor is infrared pyrometer or pick up camera.
In a preferred embodiment, said well heater has heater top, side well heater or bottom heater, each several part independence temperature control.
The device of above-mentioned preparation casting monocrystalline silicon; Through the seeding assembly is set; Clamping head clamping seed crystal soaks into, necking down and shouldering art breading; When the edge of the silicon single crystal that obtains through shouldering during near the inwall of crucible, actuator drives clamping head phase crucible and moves and make the silicon single crystal crucible bottom, and the temperature that reduces silicon liquid makes silicon liquid can obtain the casting monocrystalline silicon identical with the crystal orientation of seed crystal along the silicon single crystal directional solidification growth that obtains; The device of this preparation casting monocrystalline silicon prepares only seed crystal of needs of casting monocrystalline silicon, and production cost is lower.
[description of drawings]
Fig. 1 is the schematic perspective view of device of the preparation casting monocrystalline silicon of an embodiment;
Fig. 2 is the enlarged view at II place among Fig. 1;
Fig. 3 is the schema of the method for preparing casting monocrystalline silicon of an embodiment;
Fig. 4 is the user mode figure of the device of the preparation casting monocrystalline silicon among Fig. 1;
Fig. 5 is in the schematic perspective view of another state for the device of the preparation casting monocrystalline silicon among Fig. 1.
[embodiment]
Below in conjunction with accompanying drawing and specific embodiment the device of preparation casting monocrystalline silicon is further illustrated.
See also Fig. 1, the device 100 of the preparation casting monocrystalline silicon of an embodiment comprises body of heater 10, graphite pillar 20, insulating assembly 30, lifting subassembly 42, suspension assembly 45, heat exchange mass 47, crucible guard member 50, crucible 60, gas flow guiding tube 70, seeding assembly 80, monitor 92 and well heater 95.
Body of heater 10 comprises lower furnace body 12 and the upper furnace body 14 adaptive with lower furnace body 12.Lower furnace body 12 and upper furnace body 14 all are roughly tubular.One end of lower furnace body 12 and an end of upper furnace body 14 connect to form the receiving space of a sealing.
One end of graphite pillar 20 is fixed in the bottom of lower furnace body 12, and graphite pillar 20 is roughly stepped away from an end of the bottom of lower furnace body 12, have cascaded surface 22.Graphite pillar 20 is total a plurality of.
Side heat-insulation cage 34 is roughly tubular.One end of side heat-insulation cage 34 bends inwards and is formed with support division 342, and the other end is formed with and holds protruding 344.Hold protruding 344 for being convexly set in the annular protrusion of side heat-insulation cage 34 internal surfaces.In this embodiment, hold protruding 344 with the end face of side heat-insulation cage 34 away from an end of support division 342 between certain distance is arranged and holds convexity 344 and can be installed on card and join groove 324.The end that side heat-insulation cage 34 is formed with support division 342 is connected to the top of upper furnace body 14 through lifting subassembly 42.Lifting subassembly 42 can drive side heat-insulation cage 34 near or away from following thermal baffle 32.In this embodiment, lifting subassembly 42 has two, and each lifting subassembly 42 comprises fixed block 422 and lifting rod 424.Fixed block 422 is fixed in the top of upper furnace body 14.Lifting rod 424 passes fixed block 422 and screws togather with fixed block 422.The lower end of lifting rod 424 and side heat-insulation cage 34 are spirally connected away from a following end of thermal baffle 32, and the upper end of lifting rod 424 is passed fixed block 422 and upper furnace body 14 and is connected with a driving mechanism (figure does not show).In this embodiment, driving mechanism is a motor, thus driving mechanism can drive lifting rod 424 rotate lifting rods 424 drive side heat-insulation cages 34 towards near or away from the direction motion of thermal baffle 32 down.Be appreciated that fixed block 422 can omit, this moment lifting rod 424 directly and upper furnace body 14 be spirally connected and get final product.Driving mechanism is not limited to motor, also can be cylinder.
Top thermal baffle 36 is fixed to the top of upper furnace body 14 and corresponding with following thermal baffle 32 through suspension assembly 45.In this embodiment, top thermal baffle 36 is installed in the side heat-insulation cage 34 and is positioned at the below of support division 342.Suspension assembly 45 comprises the fixed block 452 at the top of being fixed in upper furnace body 14 and the hanger bar 454 that is connected with fixed block 452.One end and the top thermal baffle 36 of hanger bar 454 are affixed.In this embodiment, hanger bar 454 is spirally connected with fixed block 452 and an end of hanger bar 454 is convexly set in outside the upper furnace body 14.Be appreciated that hanger bar 454 is not limited to be spirally connected with fixed block 452, also can be directly and fixed block 452 affixed, fixed block 452 can omit, hanger bar 454 directly was connected with upper furnace body 14 and got final product this moment.The middle part of top thermal baffle 36 offers through hole 362.
Crucible guard member 50 is placed on the heat exchange mass 47.
Crucible 60 is placed in the crucible guard member 50, and the outer wall of crucible 60 is close to the inwall of crucible guard member 50.
One end of gas flow guiding tube 70 is interspersed in the through hole 362 of top thermal baffle 36, and the other end extends from the top of upper furnace body 14.Gas flow guiding tube 70 is used in body of heater 10, carrying rare gas element.
Please consult Fig. 2 simultaneously, seeding assembly 80 is positioned at the top center of crucible 60, and seeding assembly 80 comprises actuator (figure do not show), contiguous block 82, be interspersed in the connecting rod 84 of contiguous block 82 and be fixed in the clamping head 86 of an end of connecting rod 84.Connecting rod 84 is connected to the actuator that is used for drive link 84 away from an end of clamping head 86.In this embodiment, contiguous block 82 parts are installed in the end of gas flow guiding tube 70 away from last thermal baffle 36.Be appreciated that contiguous block 82 can omit.In this embodiment, actuator is a motor, and connecting rod 84 and clamping head 86 parts are positioned at gas flow guiding tube 70, actuator can drive link 84 near or away from the direction motion of crucible 60.Be appreciated that actuator is not limited to motor, also can be cylinder.Clamping head 86 can the clamping seed crystal.
Please consult Fig. 3 simultaneously, the method for preparing casting monocrystalline silicon of an embodiment may further comprise the steps:
Step S110, provide the preparation casting monocrystalline silicon device 100.
Step S120, seed chuck is held in the clamping head 86 of seeding assembly 80.
In this embodiment, seed crystal 200 is to be square or cylindric silicon single crystal, and the crystal orientation of seed crystal 200 is preferably < 100 >.
Step S130, polycrystalline silicon material and doping agent are positioned in the crucible 60.
Doping agent is selected from least a in boron, gallium, phosphorus, arsenic and the antimony.The ratio of coming controlled doping agent and polysilicon according to the target resistivity of the silicon single crystal of ingot casting.Preferably, the doping agent that contains in doping agent and the seed crystal 200 is identical.
Step S140, heating crucible melt polycrystalline silicon material and doping agent fully and form silicon liquid.
Please consult Fig. 4 simultaneously, during heating crucible, side heat-insulation cage 34 is provided with and holds an end of protruding 344 and be sheathed on down thermal baffle 32, and holds convexity 344 and be installed on card and join groove 324.
In this embodiment, use 95 pairs of crucibles 60 of well heater to heat, as long as can make polysilicon be melt into silicon liquid, preferably, with the heating of silicon liquid above 1423 ℃ of the fusing points of silicon.In this embodiment, make silicon liquid be in vacuum environment or in body of heater 10, feed rare gas element, thereby avoid silicon liquid oxidized, preferably, make in the body of heater 10 alternately to be under vacuum and the atmosphere of inert gases.Rare gas element is preferably argon gas.
Step S150, drive clamping head 86 and move and the seed crystal 200 that is clamped in clamping head 86 is contacted with silicon liquid relative to crucible 60, to seed crystal 200 soak into successively, art breading such as necking down and shouldering.
In this embodiment, seed crystal 200 is soaked into successively, when necking down and shouldering art breading, the temperature that can regulate well heater 95 as required.Seeding assembly 80 drives seed crystal 200 relative crucible 60 rotations in infiltration, necking down and the shouldering technology, preferably, seed crystal 200 rotations, crucible 60 is fixed.
The edge of step S160, the silicon single crystal that obtains when shouldering is during near the inwall of crucible, drives formed silicon single crystal and moves relative to crucible 60 and make silicon single crystal sink to crucible 60 bottoms.
In this embodiment, whether the edge that use monitor 92 (for example infrared pyrometer) is surveyed silicon single crystal is near the crucible inwall.
The temperature of step S170, reduction silicon liquid makes silicon liquid along formed silicon single crystal directional solidification growth, after cooling annealing, obtains the casting monocrystalline silicon identical with the crystal orientation of seed crystal.
See also Fig. 5; In this embodiment, lifting rod assembly 42 drives 34 risings of side heat-insulation cage and makes formation heat dissipation channel 44 between side heat-insulation cage 34 and the following thermal baffle 32, thereby makes the heat that is contained in the silicon liquid in the crucible 60 be released; Simultaneously; Reduce the temperature of well heater 95, the temperature that makes well heater 95 is 1420 ℃～1350 ℃, is preferably 1390 ℃～1415 ℃.Because the temperature of silicon liquid reduces from last from following gradually, so silicon liquid obtains the casting monocrystalline silicon identical with the crystal orientation of seed crystal along formed silicon single crystal directional solidification growth.
Be appreciated that and also can use other modes that silicon liquid is cooled off, for example in cooling duct, feed heat-eliminating medium around crucible 60.
In this embodiment, casting monocrystalline silicon is 1000 ℃～1300 ℃ annealing coolings down.
The device 100 of above-mentioned preparation casting monocrystalline silicon and prepare the method for casting monocrystalline silicon; Through seeding assembly 80 is set; Clamping head 86 clamping seed crystals 200 soak into, necking down and shouldering art breading; The edge of the silicon single crystal that after seed crystal 200 is through the shouldering technologies, obtains is during near the inwall of crucible; The formed silicon single crystal of actuator driving clamping head 86 drives moves relative to crucible 60 and makes silicon single crystal sink to crucible 60 bottoms, and the temperature that reduces silicon liquid makes silicon liquid along formed silicon single crystal directional solidification growth, can obtain the casting monocrystalline silicon identical with the crystal orientation of seed crystal.This method for preparing casting monocrystalline silicon only seed crystal of needs gets final product, and production cost is lower, and yield rate is higher.
Embodiment 1
Single crystal seed is installed on the clamping head 86 of seeding device, it is risen in the gas flow guiding tube 70.450 kilograms of primary polycrystalline silicon materials are placed in the crucible, and put into 0.13 kilogram of doping agent boron.Making the target resistivity after the doping is 1.70 Ω cm.Charged crucible 60 is positioned in the body of heater 10 vacuumizes, vacuum state and argon gas atmosphere replace in the heating phase stove, are beneficial to impurities removal.After the silicon material melts fully.At first the temperature of well heater 95 is reduced to 1420 ℃ fast, decline seeding device makes seed crystal contact infiltration with silicon liquid, make seed crystal fusing 2cm after.Get into the necking down process, after necking down length reached 50cm, state got into the shouldering process.The outer rim that detects the monocrystalline silico briquette when detector stops shouldering during near the inwall of crucible, decline seeding equipment, and the monoblock monocrystalline that shouldering is obtained sinks to crucible bottom.Reduce heater temperature to 1417 ℃ gradually, under the effect of lifting subassembly 42, side heat-insulation cage 34 15cm that moves upward gradually makes the gap that body of heater 10 between side heat-insulation cage 34 and following thermal baffle 32, occurred leading to.By this gap, thereby the heat of silicon melt is released the directional freeze and generate crystal of beginning to make progress from the bottom.1200 ℃ of annealing down, discharge the stress in the crystal growing process then, obtain required silicon single crystal ingot after the cooling.
The yield rate of the silicon single crystal that grows out through present method only need a seed crystal simultaneously, so production cost is lower than the method for laying seed of single crystal silicon in the bottom than high about 3 percentage points of middle embodiment 1 yield rate of patented claim (200780002763.8).
Embodiment 2
Single crystal seed is installed on the clamping head 86 of seeding device, it is risen in the gas flow guiding tube 70.480 kilograms primary polycrystalline silicon materials are placed in the crucible, and put into 0.16 kilogram of doping agent boron (weight of doping agent is relevant with the kind of polycrystalline silicon material and weight, be one through the formula result calculated, do not have the proportionlity of strictness between the two).Making the target resistivity after the doping is 1.80 Ω cm.Charged crucible 60 is positioned in the body of heater 10 vacuumizes, vacuum state and argon gas atmosphere replace in the heating phase stove, are beneficial to impurities removal.After the silicon material melts fully.At first the temperature of well heater 95 is reduced to 1418 ℃ fast, decline seeding device makes seed crystal contact infiltration with silicon liquid, make seed crystal fusing 2cm after.Get into the necking down process, after necking down length reached 50cm, state got into the shouldering process.The outer rim that detects the monocrystalline silico briquette when detector stops shouldering during near the inwall of crucible, decline seeding equipment, and the monoblock monocrystalline that shouldering is obtained sinks to crucible bottom.Reduce heater temperature to 1413 ℃ gradually, under the effect of lifting subassembly 42, side heat-insulation cage 34 15cm that moves upward gradually makes the gap that body of heater 10 between side heat-insulation cage 34 and following thermal baffle 32, occurred leading to.By this gap, thereby the heat of silicon melt is released the directional freeze and generate crystal of beginning to make progress from the bottom.
The yield rate of the silicon single crystal that grows out through present method is laid high about 2.5 percentage points of the yield rate of the method for seed of single crystal silicon in crucible bottom than the middle embodiment 1 of patented claim (200780002763.8); Only need a seed crystal simultaneously, so production cost is lower than the method for laying seed of single crystal silicon in the bottom.
The above embodiment has only expressed several kinds of embodiments of the utility model, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to the utility model claim.Should be pointed out that for the person of ordinary skill of the art under the prerequisite that does not break away from the utility model design, can also make some distortion and improvement, these all belong to the protection domain of the utility model.Therefore, the protection domain of the utility model patent should be as the criterion with accompanying claims.
Claims (6)
1. device for preparing casting monocrystalline silicon; Comprise body of heater, be installed in insulating assembly in the said body of heater, be placed on crucible and well heater in the said insulating assembly; It is characterized in that; The device of said preparation casting monocrystalline silicon also comprises seeding assembly and gas flow guiding tube, and an end of said gas flow guiding tube is interspersed in said insulating assembly, and the other end of said gas flow guiding tube extends to outside the said body of heater; Said seeding assembly comprises the clamping head that is used for the clamping seed crystal and is used to drive the actuator of said clamping head that said clamping head is positioned at the top of said crucible.
2. the device of preparation casting monocrystalline silicon according to claim 1 is characterized in that, said seeding assembly also comprises connecting rod, and said actuator is installed on said insulating assembly or the said body of heater, and said connecting rod connects said clamping head and said actuator.
3. the device of preparation casting monocrystalline silicon according to claim 1; It is characterized in that; The device of said preparation casting monocrystalline silicon also comprises lifting subassembly and suspension assembly; Said insulating assembly comprises following thermal baffle and the top thermal baffle that is arranged at said side heat-insulation cage two ends around the side heat-insulation cage around the said crucible, respectively; Said thermal baffle down and said body of heater are affixed, and said top thermal baffle is fixed to said body of heater through said suspension assembly, and said side heat-insulation cage is connected to said body of heater through said lifting subassembly; Said lifting subassembly drives said side thermal baffle towards the direction motion away from said following thermal baffle, makes between said side heat-insulation cage and the said following thermal baffle and forms heat dissipation channel.
4. the device of preparation casting monocrystalline silicon according to claim 1 is characterized in that, the device of said preparation casting monocrystalline silicon also comprises the monitor of the upgrowth situation that is used to monitor the silicon single crystal in the said crucible.
5. the device of preparation casting monocrystalline silicon according to claim 4 is characterized in that, said monitor is infrared pyrometer or pick up camera.
6. the device of preparation casting monocrystalline silicon according to claim 1 is characterized in that, said well heater has heater top, side well heater or bottom heater, each several part independence temperature control.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2012200357231U CN202465942U (en) | 2012-02-03 | 2012-02-03 | Device for preparing casting monocrystalline silicon |
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| CN2012200357231U CN202465942U (en) | 2012-02-03 | 2012-02-03 | Device for preparing casting monocrystalline silicon |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102534748A (en) * | 2012-02-03 | 2012-07-04 | 江苏协鑫硅材料科技发展有限公司 | Device and method for preparing casting monocrystalline silicon |
| CN103160918B (en) * | 2013-02-26 | 2016-06-22 | 宏大中源太阳能股份有限公司 | Quasi-monocrystalline silicon prepare stove and preparation method |
-
2012
- 2012-02-03 CN CN2012200357231U patent/CN202465942U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102534748A (en) * | 2012-02-03 | 2012-07-04 | 江苏协鑫硅材料科技发展有限公司 | Device and method for preparing casting monocrystalline silicon |
| CN102534748B (en) * | 2012-02-03 | 2014-11-26 | 江苏协鑫硅材料科技发展有限公司 | Device and method for preparing casting monocrystalline silicon |
| CN103160918B (en) * | 2013-02-26 | 2016-06-22 | 宏大中源太阳能股份有限公司 | Quasi-monocrystalline silicon prepare stove and preparation method |
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