CN107579034A - 内部腔室旋转马达、可供选择的旋转 - Google Patents

内部腔室旋转马达、可供选择的旋转 Download PDF

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CN107579034A
CN107579034A CN201710619015.XA CN201710619015A CN107579034A CN 107579034 A CN107579034 A CN 107579034A CN 201710619015 A CN201710619015 A CN 201710619015A CN 107579034 A CN107579034 A CN 107579034A
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迈克尔·P·卡拉津
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    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/0033—Heating devices using lamps
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    • H05B3/0047—Heating devices using lamps for industrial applications for semiconductor manufacture
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    • F16C19/00—Bearings with rolling contact, for exclusively rotary movement
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    • F16C32/0614—Bearings not otherwise provided for with moving member supported by a fluid cushion formed, at least to a large extent, otherwise than by movement of the shaft, e.g. hydrostatic air-cushion bearings supported by a gas cushion, e.g. an air cushion the gas being supplied under pressure, e.g. aerostatic bearings
    • F16C32/0618—Bearings not otherwise provided for with moving member supported by a fluid cushion formed, at least to a large extent, otherwise than by movement of the shaft, e.g. hydrostatic air-cushion bearings supported by a gas cushion, e.g. an air cushion the gas being supplied under pressure, e.g. aerostatic bearings via porous material
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    • F16C—SHAFTS; FLEXIBLE SHAFTS; ELEMENTS OR CRANKSHAFT MECHANISMS; ROTARY BODIES OTHER THAN GEARING ELEMENTS; BEARINGS
    • F16C32/00—Bearings not otherwise provided for
    • F16C32/06—Bearings not otherwise provided for with moving member supported by a fluid cushion formed, at least to a large extent, otherwise than by movement of the shaft, e.g. hydrostatic air-cushion bearings
    • F16C32/0681—Construction or mounting aspects of hydrostatic bearings, for exclusively rotary movement, related to the direction of load
    • F16C32/0696—Construction or mounting aspects of hydrostatic bearings, for exclusively rotary movement, related to the direction of load for both radial and axial load
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft

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Abstract

本发明的实施方式大体关于一种RTP腔室内的旋转装置。该旋转装置包括圆柱形内座圈、多个止推轴承及多个径向轴承。在操作期间，这些轴承产生气垫，该气垫防止旋转部分接触静止部分。

Description

内部腔室旋转马达、可供选择的旋转
本申请是申请日为2014年5月21日、申请号为201480034079.8、发明名称为“内部腔室旋转马达、可供选择的旋转”的发明专利申请的分案申请。
背景
技术领域
本发明的实施方式大体关于快速热处理(rapid thermal processing；RTP)腔室，且更具体地说，关于具有内部旋转装置的真空RTP腔室。
现有技术
RTP系统技术已经发展成在将基板的处置(handling)最小化的同时增加基板的制造产量(throughput)。此处所指的基板类型包括用于超大规模集成(ultra-large scaleintegrated；ULSI)电路的那些基板。RTP指的是若干不同工艺，包括快速热退火(rapidthermal annealing；RTA)、快速热清洁(rapid thermal cleaning；RTC)、快速热化学气相沉积(rapid thermal chemical vapor deposition；RTCVD)、快速热氧化(rapid thermaloxidation；RTO)及快速热氮化(rapid thermal nitridation；RTN)。
在热处理期间对基板的表面处理的均匀性对生产均一的器件也很关键。举例而言，在借助RTO或RTN的互补金属-氧化物-半导体(complementary metal-oxide-semiconductor；CMOS)栅介质(gate dielectric)形成的特定应用中，栅介质的厚度、生长温度及均匀性是关键参数，这些参数影响总体器件性能及制造成品率(yield)。因此，将温度不均匀性最小化的技术至关重要。
实现温度均匀性的一种方式是通过在处理期间旋转基板。这消除了沿(along)方位自由度(azimuthal degree-of-freedom)的温度相依性。按常规已使用磁悬浮转子(magnetically-levitated rotor)系统来旋转基板。然而，在基板尺寸较大时的成本令人望而却步，同时还有电噪声抗扰性(electrical noise immunity)及磁耦合不足问题。
因此，RTP腔室内需要一种改良的旋转装置。
发明内容
本发明的实施方式大体关于一种RTP腔室内的旋转装置。在一个实施方式中，该旋转装置包括圆柱形内座圈(inner race)，该圆柱形内座圈具有薄壁及自该薄壁延伸的环形部分。薄壁的圆柱形表面垂直于环形部分的平面(flat surface)。旋转装置进一步包括：多个多孔止推轴承(thrust bearing)，所述多个多孔止推轴承以第一间隔关系邻接环形部分的平面而设置，该第一间隔关系容许圆柱形内座圈相对于多个多孔止推轴承的旋转；多个多孔径向轴承(radial bearing)，所述多个多孔径向轴承以第二间隔关系邻接薄壁的圆柱形表面而设置，该第二间隔关系容许圆柱形内座圈相对于多个多孔径向轴承的旋转；及静止支撑环，该静止支撑环以第一间隔关系紧固多个多孔止推轴承及以第二间隔关系紧固多个多孔径向轴承。在两个多孔止推轴承之间紧固各个多孔径向轴承。
在另一个实施方式中，公开了一种热处理腔室。该热处理腔室包括形成内部空间的腔室主体及设置于该内部空间中的旋转装置。旋转装置包括圆柱形内座圈，该圆柱形内座圈具有薄壁及自该薄壁延伸的环形部分。薄壁的圆柱形表面垂直于环形部分的平面。旋转装置进一步包括：多个多孔止推轴承，所述多个多孔止推轴承以第一间隔关系邻接环形部分的平面而设置，该第一间隔关系容许圆柱形内座圈相对于多个多孔止推轴承的旋转；多个多孔径向轴承，所述多个多孔径向轴承以第二间隔关系邻接薄壁的圆柱形表面而设置，该第二间隔关系容许圆柱形内座圈相对于多个多孔径向轴承的旋转；及静止支撑环，该静止支撑环以第一间隔关系紧固多个多孔止推轴承及以第二间隔关系紧固多个多孔径向轴承。在两个多孔止推轴承之间紧固各个多孔径向轴承。旋转装置进一步包括连接至各个多孔止推轴承的第一气体供应管线及连接至各个多孔径向轴承的第二气体供应管线。
在另一个实施方式中，公开了一种用于旋转基板的方法。该方法包括用线性弧形马达旋转圆柱形内座圈。将基板支撑件紧固至圆柱形内座圈。该方法进一步包括将气体供应至多个多孔止推轴承以在第一气垫上支撑圆柱形内座圈，及将气体供应至多个多孔径向轴承以在第二气垫上使圆柱形内座圈位于中心。
附图简要说明
因此，以可详细理解本发明的上述特征的方式，可通过参照实施方式来获得上文简要概述的本发明的更具体的描述，这些实施方式中的一些实施方式图示于附图中。然而，应注意的是，附图仅图示出本发明的典型实施方式，且因此这些附图不应被视为对本发明的范围的限制，因为本发明可允许其他等效的实施方式。
图1是根据本发明的一个实施方式的处理腔室的横截面视图。
图2是图示根据本发明的一个实施方式的多个止推轴承及径向轴承的顶视图。
图3是图示根据本发明的一个实施方式的空气轴承的进气口及气体管线的横截面视图。
图4是根据本发明的一个实施方式的静止支撑环及线性弧形马达的等角(isometric)视图。
图5A至图5B图示根据本发明的一个实施方式的旋转装置的旋转组件。
为促进理解，已尽可能使用相同的附图标记来标示各图所共有的相同元件。应预期，在一个实施方式中所公开的元件可有益地用于其他实施方式而无需赘述。
具体实施方式
本发明的实施方式大体关于RTP腔室内的旋转装置。旋转装置包括圆柱形内座圈、多个止推轴承及多个径向轴承。在操作期间，这些轴承产生气垫，该气垫防止旋转部分接触静止部分。
图1是具有设置在里面的旋转装置102的处理腔室100的横截面视图。处理腔室100包括界定工艺空间106的腔室主体104。在工艺空间106中设置窗108。窗108可由石英形成。在窗108下方设置辐射能源110。辐射能源110被配置成将辐射能导向工艺空间106。将反射板112耦接至工艺空间106内部的腔室主体104的上壁114。可将多个热传感器116设置成穿过反射板112。可将各个传感器116连接至高温计118。
旋转装置102包括静止支撑组件(下文描述)及旋转组件，该旋转组件包括旋转环120及由旋转环120支撑的边缘环122。在边缘环122上设置基板124，且将基板124及边缘环122定位于辐射能源110上方，使得辐射能源110可加热基板124及边缘环122两者。在一个实施方式中，基板124被设置在旋转圆形支撑件上而不是由旋转环120及边缘环122支撑。旋转组件进一步包括支撑构件126及内座圈128。内座圈128是圆柱形的，且具有薄壁152及自薄壁152延伸的环形部分154。薄壁152的圆柱形表面156垂直于环形部分154的平面158。
线性弧形马达130使旋转组件旋转。线性弧形马达130可包括线圈单元132、磁体单元134及编码器136。在编码器支撑件138上设置编码器136。线性弧形马达130可为可购自Loomis,California(美国加州卢米斯)的Applimotion公司的LARC系列马达。磁体单元134可被镀镍或取决于应用而被密封。
将旋转组件静置于静止支撑组件上，该静止支撑组件包括静止支撑环140、多个径向轴承144、多个止推轴承146及座圈支撑件148。在座圈支撑件148上设置静止支撑环140及轴承144、146。径向轴承及止推轴承可为可购自Aston,Pennsylvania(美国宾州阿斯顿)的NEWWAY Air Bearings(NEWWAY空气轴承公司)的多孔空气轴承。邻接环形部分154的平面158设置多个多孔止推轴承146。当旋转装置102不处于操作中时，可将内座圈128静置于止推轴承146上。
邻接薄壁152的圆柱形表面156设置多个多孔径向轴承144。圆柱形薄壁152具有一种半径，该半径比外接(circumscribe)所有径向轴承144的圆的半径更小。当旋转组件不处于操作中时，圆柱形内座圈128可被偏心(off center)设置，因而接触一个或更多个径向轴承144。当在操作中时，内座圈128旋转而不接触多孔径向轴承144及多孔止推轴承146(下文描述细节)。
借助球形支撑件142将多孔径向轴承144及多孔止推轴承146中的每一个轴承都紧固至静止支撑环140。多孔径向轴承144可具有在相邻多孔径向轴承144之间的间隔关系，且多孔止推轴承146可具有在相邻多孔止推轴承146之间的间隔关系。在一个实施方式中，如图2中所示，将三个等间隔分离的多孔径向轴承144及三个等间隔分离的止推轴承146紧固至静止支撑环140。各个类型轴承的数目不限于三个。另外，如图2中所示，在两个多孔止推轴承146之间紧固各个多孔径向轴承144。
参看图1，当旋转组件处于操作中时，线圈单元132迫使磁体单元134旋转，该磁体单元134又使内座圈128、支撑构件126、旋转环120、边缘环122及基板124旋转。旋转速度范围从1-1000RPM。当这些零件旋转时，经由一个或更多个进气口150泵送诸如氮气之类的惰性气体且从多孔径向轴承144及多孔止推轴承146中排出。多孔径向轴承144及多孔止推轴承146可具有单独气体管线以用于更好的流量控制。就各个多孔止推轴承146而言，从面向内座圈128的环形部分154的平面158的止推轴承146的侧面抽出气体。气体抬升旋转组件的内座圈128，于是这些零件在气垫上旋转。气垫防止旋转组件接触任何静止部分，因此不会产生颗粒。类似地，从面向内座圈128的薄壁152的圆柱形表面156的多孔径向轴承144的侧面抽出气体，在多孔径向轴承144与内座圈128之间产生气垫。此气垫也防止旋转组件接触任何静止部分。
图3是图示根据本发明的一个实施方式的进气口150及气体管线302的横截面视图。如图3中所示，将进气口150连接至一个或更多个气体管线302。在一个实施方式中，将气体管线302连接至所有径向轴承144及止推轴承146。在另一个实施方式中，气体管线302仅连接至多孔止推轴承146，而将连接至不同进气口的单独气体管线402连接至多孔径向轴承144。
图4是根据本发明的一个实施方式的静止支撑环140及线性弧形马达130的等角视图。为清晰起见移除内座圈128。如图4中所示，将多孔径向轴承144及多孔止推轴承146紧固至静止支撑环140。仅将气体管线302连接至多孔止推轴承146及仅将气体管线402连接至多孔径向轴承144。将气体管线302连接至进气口150及将气体管线402连接至进气口404。在单独供应气体的情况下，可更好地控制用以形成气垫的气流。
图5A至图5B图示根据本发明的一个实施方式的旋转装置102的旋转组件。在操作期间，由线圈单元132旋转磁体单元134，该磁体单元134又旋转内座圈128、支撑构件126及旋转环120。总旋转质量为约24kg且图5B中所示的重心“C”在止推轴承的顶表面上方约11.5mm处。低重心确保平滑旋转。
总而言之，公开了一种具有旋转装置的RTP腔室。旋转装置包括马达、多个径向轴承及多个止推轴承。这些轴承产生气垫，该气垫将旋转部分与静止部分分离。由于旋转是无摩擦的，所以不产生颗粒。
尽管前文针对本发明的实施方式，但是可在不背离本发明的基本范围的情况下设计出本发明的其他及进一步实施方式，且由以下权利要求书来确定本发明的范围。

Claims (20)

1.一种旋转装置，所述旋转装置包括：
圆柱形内座圈，所述圆柱形内座圈具有壁及自所述壁延伸的环形部分，其中所述壁的圆柱形表面垂直于所述环形部分的表面；
多个多孔止推轴承，所述多个多孔止推轴承邻接所述环形部分的所述表面而设置；
多个多孔径向轴承，所述多个多孔径向轴承邻接所述壁的所述圆柱形表面而设置；
静止支撑环，所述静止支撑环紧固所述多个多孔止推轴承和所述多个多孔径向轴承；以及
线性弧形马达，所述线性弧形马达接触所述圆柱形内座圈。
2.如权利要求1所述的旋转装置，进一步包括：
第一气体供应管线，所述第一气体供应管线被连接至各个多孔止推轴承；以及
第二气体供应管线，所述第二气体供应管线被连接至各个多孔径向轴承。
3.如权利要求1所述的旋转装置，进一步包括：
基板支撑件，所述基板支撑件附接至所述圆柱形内座圈。
4.如权利要求1所述的旋转装置，其中所述线性弧形马达包括：
磁体；
线圈，所述线圈被配置成使所述磁体旋转；以及
编码器。
5.如权利要求1所述的旋转装置，其中所述多个多孔径向轴承包括被等间隔分离的三个多孔径向轴承。
6.如权利要求5所述的旋转装置，其中所述多个多孔止推轴承包括被等间隔分离的三个多孔止推轴承。
7.如权利要求2所述的旋转装置，其中所述第一气体供应管线和所述第二气体供应管线被连接至单独的进气口，以用于通过所述第一气体供应管线和所述第二气体供应管线提供单独的气体供应。
8.一种热处理腔室，所述热处理腔室包括：
腔室主体，所述腔室主体形成内部空间；以及
旋转装置，所述旋转装置设置于所述内部空间中，其中所述旋转装置包括：
圆柱形内座圈，所述圆柱形内座圈具有壁及自所述壁延伸的环形部分，其中所述壁的圆柱形表面垂直于所述环形部分的表面；
多个多孔止推轴承，所述多个多孔止推轴承邻接所述环形部分的所述表面而设置；
多个多孔径向轴承，所述多个多孔径向轴承邻接所述壁的所述圆柱形表面而设置；
静止支撑环，所述静止支撑环紧固所述多个多孔止推轴承和所述多个多孔径向轴承；以及
线性弧形马达，所述线性弧形马达接触所述圆柱形内座圈。
9.如权利要求8所述的热处理腔室，进一步包括：
基板支撑件，所述基板支撑件附接至所述圆柱形内座圈。
10.如权利要求8所述的热处理腔室，其中所述线性弧形马达包括：
磁体；
线圈，所述线圈被配置成使所述磁体旋转；以及
编码器。
11.如权利要求8所述的热处理腔室，其中所述多个多孔径向轴承包括被等间隔分离的三个多孔径向轴承。
12.如权利要求11所述的热处理腔室，其中所述多个多孔止推轴承包括被等间隔分离的三个多孔止推轴承。
13.如权利要求8所述的热处理腔室，其中所述第一气体供应管线和所述第二气体供应管线被连接至单独的进气口，以用于通过所述第一气体供应管线和所述第二气体供应管线提供单独的气体供应。
14.如权利要求9所述的热处理腔室，其中所述基板支撑件是边缘环，并且所述边缘环通过旋转环而被紧固至所述圆柱形内座圈，所述旋转环被紧固至所述边缘环和所述圆柱形内座圈。
15.如权利要求14所述的热处理腔室，进一步包括设置在所述边缘环之下的辐射能源。
16.如权利要求15所述的热处理腔室，进一步包括设置在所述边缘环之上的反射体。
17.一种热处理腔室，所述热处理腔室包括：
腔室主体，所述腔室主体形成内部空间；以及
旋转装置，所述旋转装置设置于所述内部空间中，其中所述旋转装置包括：
圆柱形内座圈，所述圆柱形内座圈具有壁及自所述壁延伸的环形部分，其中所述壁的圆柱形表面垂直于所述环形部分的表面；
多个多孔止推轴承，所述多个多孔止推轴承邻接所述环形部分的所述表面而设置；
多个多孔径向轴承，所述多个多孔径向轴承邻接所述壁的所述圆柱形表面而设置；
静止支撑环，所述静止支撑环紧固所述多个多孔止推轴承和所述多个多孔径向轴承；以及
基板支撑件，所述基板支撑件附接至所述圆柱形内座圈。
18.如权利要求17所述的热处理腔室，进一步包括：
线性弧形马达，所述线性弧形马达啮合所述圆柱形内座圈。
19.如权利要求18所述的热处理腔室，其中所述线性弧形马达包括：
磁体；
线圈，所述线圈被配置成使所述磁体旋转；以及
编码器。
20.如权利要求17所述的热处理腔室，其中所述基板支撑件是边缘环，并且所述边缘环通过旋转环而被紧固至所述圆柱形内座圈，所述旋转环被紧固至所述边缘环和所述圆柱形内座圈。
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