TW201506271A - 內部腔室旋轉馬達及相應的旋轉方法 - Google Patents

內部腔室旋轉馬達及相應的旋轉方法 Download PDF

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TW201506271A
TW201506271A TW103119088A TW103119088A TW201506271A TW 201506271 A TW201506271 A TW 201506271A TW 103119088 A TW103119088 A TW 103119088A TW 103119088 A TW103119088 A TW 103119088A TW 201506271 A TW201506271 A TW 201506271A
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porous
inner race
cylindrical inner
bearings
thrust bearings
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Michael P Karazim
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/0033—Heating devices using lamps
    • H05B3/0038—Heating devices using lamps for industrial applications
    • H05B3/0047—Heating devices using lamps for industrial applications for semiconductor manufacture
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16C—SHAFTS; FLEXIBLE SHAFTS; ELEMENTS OR CRANKSHAFT MECHANISMS; ROTARY BODIES OTHER THAN GEARING ELEMENTS; BEARINGS
    • F16C19/00—Bearings with rolling contact, for exclusively rotary movement
    • F16C19/02—Bearings with rolling contact, for exclusively rotary movement with bearing balls essentially of the same size in one or more circular rows
    • F16C19/14—Bearings with rolling contact, for exclusively rotary movement with bearing balls essentially of the same size in one or more circular rows for both radial and axial load
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16C—SHAFTS; FLEXIBLE SHAFTS; ELEMENTS OR CRANKSHAFT MECHANISMS; ROTARY BODIES OTHER THAN GEARING ELEMENTS; BEARINGS
    • F16C32/00—Bearings not otherwise provided for
    • F16C32/06—Bearings not otherwise provided for with moving member supported by a fluid cushion formed, at least to a large extent, otherwise than by movement of the shaft, e.g. hydrostatic air-cushion bearings
    • F16C32/0603—Bearings not otherwise provided for with moving member supported by a fluid cushion formed, at least to a large extent, otherwise than by movement of the shaft, e.g. hydrostatic air-cushion bearings supported by a gas cushion, e.g. an air cushion
    • F16C32/0614—Bearings not otherwise provided for with moving member supported by a fluid cushion formed, at least to a large extent, otherwise than by movement of the shaft, e.g. hydrostatic air-cushion bearings supported by a gas cushion, e.g. an air cushion the gas being supplied under pressure, e.g. aerostatic bearings
    • F16C32/0618—Bearings not otherwise provided for with moving member supported by a fluid cushion formed, at least to a large extent, otherwise than by movement of the shaft, e.g. hydrostatic air-cushion bearings supported by a gas cushion, e.g. an air cushion the gas being supplied under pressure, e.g. aerostatic bearings via porous material
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16C—SHAFTS; FLEXIBLE SHAFTS; ELEMENTS OR CRANKSHAFT MECHANISMS; ROTARY BODIES OTHER THAN GEARING ELEMENTS; BEARINGS
    • F16C32/00—Bearings not otherwise provided for
    • F16C32/06—Bearings not otherwise provided for with moving member supported by a fluid cushion formed, at least to a large extent, otherwise than by movement of the shaft, e.g. hydrostatic air-cushion bearings
    • F16C32/0681—Construction or mounting aspects of hydrostatic bearings, for exclusively rotary movement, related to the direction of load
    • F16C32/0696—Construction or mounting aspects of hydrostatic bearings, for exclusively rotary movement, related to the direction of load for both radial and axial load
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft

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  • Health & Medical Sciences (AREA)
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Abstract

本發明之實施例大體而言係關於一種RTP腔室內之旋轉裝置。旋轉裝置包括圓柱形內座圈、複數個止推軸承及複數個徑向軸承。在操作期間，軸承產生氣墊，該氣墊防止旋轉部分接觸靜止部分。

Description

內部腔室旋轉馬達及相應的旋轉方法
本發明之實施例大體而言係關於快速熱處理(rapid thermal processing；RTP)腔室，且更特定言之係關於具有內部旋轉裝置的真空RTP腔室。
RTP系統技術已經發展以在最小化基板之裝卸的同時增加基板之製造產量。此處所指之基板類型包括用於超大規模積體(ultra-large scale integrated；ULSI)電路的彼等基板。RTP指若干不同製程，包括快速熱退火(rapid thermal annealing；RTA)、快速熱清洗(rapid thermal cleaning；RTC)、快速熱化學氣相沉積(rapid thermal chemical vapor deposition；RTCVD)、快速熱氧化(rapid thermal oxidation；RTO)及快速熱氮化(rapid thermal nitridation；RTN)。
在熱處理期間對基板之表面的製程均勻性亦對生產均均一裝置很關鍵。舉例而言，在藉由RTO或RTN的互補金氧半導體(complementary metal-oxide-semiconductor；CMOS)閘極介電形成之特定應用中，閘極介電之厚度、生長溫度及 均勻性係關鍵參數，該等參數影響總體裝置效能及製造產出率。因此，最小化溫度不均勻性之技術至關重要。
實現溫度均勻性之一種方式為在處理期間旋轉基板。此移除了對方位自由度的溫度相依性。習知已使用磁浮轉子系統旋轉基板。然而，在基板尺寸較大時的成本令人望而卻步，同時還伴有電干擾抗擾性及磁耦合不足問題。
因此，RTP腔室內需要一種改良的旋轉裝置。
本發明之實施例大體而言係關於一種RTP腔室內之旋轉裝置。在一個實施例中，旋轉裝置包含圓柱形內座圈，該圓柱形內座圈具有薄壁及自薄壁延伸的環形部分。薄壁之圓柱形表面垂直於環形部分之平面。旋轉裝置進一步包含：複數個多孔止推軸承，該複數個多孔止推軸承以第一間隔關係鄰接環形部分之平面安置，該第一間隔關係容許圓柱形內座圈相對於複數個多孔止推軸承之旋轉；複數個多孔徑向軸承，該複數個多孔徑向軸承以第二間隔關係鄰接薄壁之圓柱形表面安置，該第二間隔關係容許圓柱形內座圈相對於複數個多孔徑向軸承之旋轉；及靜止支撐環，該靜止支撐環以第一間隔關係緊固複數個多孔止推軸承及以第二間隔關係緊固複數個多孔徑向軸承。在兩個多孔止推軸承之間緊固各個多孔徑向軸承。
在另一實施例中，本發明揭示一種熱處理腔室。熱處理腔室包含形成內容積的腔室主體及安置於內容積中的旋轉裝置。旋轉裝置包含圓柱形內座圈，該圓柱形內座圈具有 薄壁及自薄壁延伸的環形部分。薄壁之圓柱形表面垂直於環形部分之平面。旋轉裝置進一步包含：複數個多孔止推軸承，該複數個多孔止推軸承以第一間隔關係鄰接環形部分之平面安置，該第一間隔關係容許圓柱形內座圈相對於複數個多孔止推軸承之旋轉；複數個多孔徑向軸承，該複數個多孔徑向軸承以第二間隔關係鄰接薄壁之圓柱形表面安置，該第二間隔關係容許圓柱形內座圈相對於複數個多孔徑向軸承之旋轉；及靜止支撐環，該靜止支撐環以第一間隔關係緊固複數個多孔止推軸承及以第二間隔關係緊固複數個多孔徑向軸承。在兩個多孔止推軸承之間緊固各個多孔徑向軸承。旋轉裝置進一步包含連接至各個多孔止推軸承的第一氣體供應管線及連接至各個多孔徑向軸承的第二氣體供應管線。
在另一實施例中，本發明揭示一種用於旋轉基板的方法。該方法包含用線性弧形馬達旋轉圓柱形內座圈。將基板支撐件緊固至圓柱形內座圈。該方法進一步包含向複數個多孔止推軸承供應氣體以在第一氣墊上支撐圓柱形內座圈，及向複數個多孔徑向軸承供應氣體以在第二氣墊上使圓柱形內座圈位於中心。
100‧‧‧處理腔室
102‧‧‧旋轉裝置
104‧‧‧腔室主體
106‧‧‧處理容積
108‧‧‧窗口
110‧‧‧輻射能源
112‧‧‧反射平板
114‧‧‧頂壁
116‧‧‧感測器
118‧‧‧高溫計
120‧‧‧旋轉環
122‧‧‧邊緣環
124‧‧‧基板
126‧‧‧支撐構件
128‧‧‧內座圈
130‧‧‧線性弧形馬達
132‧‧‧線圈單元
134‧‧‧磁體單元
136‧‧‧編碼器
138‧‧‧編碼器支撐件
140‧‧‧靜止支撐環
142‧‧‧球形支撐件
144‧‧‧多孔徑向軸承
146‧‧‧多孔止推軸承
148‧‧‧座圈支撐件
150‧‧‧進氣口
152‧‧‧薄壁
154‧‧‧環形部分
156‧‧‧圓柱形表面
158‧‧‧平面
302‧‧‧氣體管線
402‧‧‧氣體管線
404‧‧‧進氣口
C‧‧‧重心
因此，為了可詳細理解本發明之上文所敍述的特徵，可參考實施例更具體描述上文簡要概述之本發明，一些實施例圖示於隨附圖式中。然而，應注意，隨附圖式僅圖示出本發明之典型實施例，且因此該等圖式不欲視為本發明範疇之限制，因為本發明可允許其他同等有效之實施例。
第1圖係根據本發明之一個實施例之處理腔室之橫截面視圖。
第2圖係圖示根據本發明之一個實施例之複數個止推軸承及徑向軸承的俯視圖。
第3圖係圖示根據本發明之一個實施例之空氣軸承的進氣口及氣體管線之橫截面視圖。
第4圖係根據本發明之一個實施例之靜止支撐環及線性弧形馬達之等角視圖。
第5A圖至第5B圖圖示根據本發明之一個實施例之旋轉裝置之旋轉組件。
為了促進理解，在可能的情況下，相同元件符號已用於代表諸圖共用之相同元件。應設想，在一實施例中所揭示之元件可有益地用於其他實施例而無需贅述。
本發明之實施例大體而言係關於RTP腔室內之旋轉裝置。旋轉裝置包括圓柱形內座圈、複數個止推軸承及複數個徑向軸承。在操作期間，軸承產生氣墊，該氣墊防止旋轉部分接觸靜止部分。
第1圖係具有旋轉裝置102安置在內的處理腔室100之橫截面視圖。處理腔室100包括界定處理容積106的腔室主體104。在處理容積106中安置窗口108。窗口108可由石英形成。在窗口108下方安置輻射能源110。配置輻射能源110以將輻射能導向處理容積106。將反射平板112耦接至處理容積106內部的腔室主體104之頂壁114。可經由反射平板 112安置複數個熱感測器116。可將各個感測器116連接至高溫計118。
旋轉裝置102包含靜止支撐組件(下文將描述)及旋轉組件，該旋轉組件包括旋轉環120及藉由旋轉環120支撐的邊緣環122。在邊緣環122上安置基板124，且將基板124及邊緣環122定位於輻射能源110上方，使得輻射能源110可加熱基板124及邊緣環122兩者。在一個實施例中，在旋轉圓形支撐件上安置基板124，而不是由旋轉環120及邊緣環122支撐。旋轉組件進一步包括支撐構件126及內座圈128。內座圈128係圓柱形及具有薄壁152及自薄壁152延伸的環形部分154。薄壁152之圓柱形表面156垂直於環形部分154之平面158。
線性弧形馬達130旋轉旋轉組件。線性弧形馬達130可包括線圈單元132、磁體單元134及編碼器136。在編碼器支撐件138上安置編碼器136。線性弧形馬達130可為LARC系列馬達，可購自美國加州盧米斯的Applimotion公司。磁體單元134可為鍍鎳或取決於應用而經密封。
將旋轉組件靜置於靜止支撐組件上，該靜止支撐組件包含靜止支撐環140、複數個徑向軸承144、複數個止推軸承146及座圈支撐件148。在座圈支撐件148上安置靜止支撐環140及軸承144、146。徑向軸承及止推軸承可為多孔空氣軸承，可購自美國賓州阿斯頓的NEWWAY空氣軸承公司。鄰接環形部分154之平面158安置複數個多孔止推軸承146。當旋轉裝置102不處於操作中時，可將內座圈128靜置於止推 軸承146上。
鄰接薄壁152之圓柱形表面156安置複數個多孔徑向軸承144。圓柱形薄壁152具有一半徑，該半徑比外接所有徑向軸承144之圓周半徑更小。當旋轉組件不處於操作中時，可偏心安置圓柱形內座圈128，因而接觸一或更多個徑向軸承144。當在操作中時，旋轉內座圈128而不接觸多孔徑向軸承144及多孔止推軸承146(下文將描述細節)。
藉由球形支撐件142將多孔徑向軸承144及多孔止推軸承146之各者緊固至靜止支撐環140。多孔徑向軸承144可在相鄰多孔徑向軸承144之間具有間隔關係，且多孔止推軸承146可在相鄰多孔止推軸承146之間具有間隔關係。在一個實施例中，如第2圖中所示，將三個等間隔分離之多孔徑向軸承144及三個等間隔分離之止推軸承146緊固至靜止支撐環140上。各個類型軸承之數目不限於三個。另外，如第2圖中所示，在兩個多孔止推軸承146之間緊固各個多孔徑向軸承144。
參看第1圖，當旋轉組件處於操作中時，線圈單元132迫使磁體單元134旋轉，該磁體單元又旋轉內座圈128、支撐構件126、旋轉環120、邊緣環122及基板124。旋轉速度範圍處於1-1000RPM。當該等部分旋轉時，經由一或更多個進氣口150泵送惰性氣體(諸如氮氣)且從多孔徑向軸承144及多孔止推軸承146中排出。多孔徑向軸承144及多孔止推軸承146可具有單獨氣體管線用於更好的流量控制。針對各個多孔止推軸承146，從面向內座圈128之環形部分154 之平面158的止推軸承146之側面抽出氣體。氣體抬升旋轉組件之內座圈128，使得該等部分在氣墊上旋轉。氣墊防止旋轉組件接觸任何靜止部分，因此將不產生顆粒。類似地，從面向內座圈128之薄壁152之圓柱形表面156的多孔徑向軸承144之側面抽出氣體，在多孔徑向軸承144與內座圈128之間產生氣墊。又，此氣墊防止組件接觸任何靜止部分。
第3圖係圖示根據本發明之一個實施例之進氣口150及氣體管線302之橫截面視圖。如第3圖中所示，將進氣口150連接至一或更多個氣體管線302。在一個實施例中，將氣體管線302連接至所有徑向軸承144及止推軸承146。在另一實施例中，氣體管線302僅連接至多孔止推軸承146，而將連接至不同進氣口的單獨氣體管線402連接至多孔徑向軸承144。
第4圖係根據本發明之一個實施例之靜止支撐環140及線性弧形馬達130之等角視圖。為了清晰移除內座圈128。如第4圖中所示，將多孔徑向軸承144及多孔止推軸承146緊固至靜止支撐環140。僅將氣體管線302連接至多孔止推軸承146及僅將氣體管線402連接至多孔徑向軸承144。將氣體管線302連接至進氣口150及將氣體管線402連接至進氣口404。在單獨供應氣體情況下，可更好地控制形成氣墊之氣流。
第5A圖至第5B圖圖示根據本發明之一個實施例之旋轉裝置102之旋轉組件。在操作期間，藉由線圈單元132旋轉磁體單元134，該磁體單元又旋轉內座圈128、支撐構件 126及旋轉環120。總旋轉質量為約24kg及第5B圖中所示之重心「C」處於止推軸承之頂表面上方約11.5mm。低重心確保平滑旋轉。
總而言之，本發明揭示一種具有旋轉裝置的RTP腔室。旋轉裝置包括馬達、複數個徑向軸承及複數個止推軸承。軸承產生氣墊將旋轉部分與靜止部分分離。由於旋轉無摩擦，因此不產生顆粒。
儘管上文所述係針對本發明之實施例，但是可在不脫離本發明之基本範疇的情況下設計出本發明之其他及進一步實施例，且由以下申請專利範圍決定本發明之範疇。
100‧‧‧處理腔室
102‧‧‧旋轉裝置
104‧‧‧腔室主體
106‧‧‧處理容積
108‧‧‧窗口
110‧‧‧輻射能源
112‧‧‧反射平板
114‧‧‧頂壁
116‧‧‧感測器
118‧‧‧高溫計
120‧‧‧旋轉環
122‧‧‧邊緣環
124‧‧‧基板
126‧‧‧支撐構件
128‧‧‧內座圈
130‧‧‧線性弧形馬達
132‧‧‧線圈單元
134‧‧‧磁體單元
136‧‧‧編碼器
138‧‧‧編碼器支撐件
140‧‧‧靜止支撐環
142‧‧‧球形支撐件
144‧‧‧多孔徑向軸承
146‧‧‧多孔止推軸承
148‧‧‧座圈支撐件
150‧‧‧進氣口
152‧‧‧薄壁
154‧‧‧環形部分
156‧‧‧圓柱形表面
158‧‧‧平面

Claims (20)

  1. 一種旋轉裝置，該旋轉裝置包含：一圓柱形內座圈，該圓柱形內座圈具有一薄壁及自該薄壁延伸的一環形部分，其中該薄壁之一圓柱形表面垂直於該環形部分之一平面；複數個多孔止推軸承，該複數個多孔止推軸承以一第一間隔關係鄰接該環形部分之該平面安置，該第一間隔關係容許該圓柱形內座圈相對於該複數個多孔止推軸承之旋轉；複數個多孔徑向軸承，該複數個多孔徑向軸承以一第二間隔關係鄰接該薄壁之該圓柱形表面安置，該第二間隔關係容許該圓柱形內座圈相對於該複數個多孔徑向軸承之旋轉；以及一靜止支撐環，該靜止支撐環以該第一間隔關係緊固該複數個多孔止推軸承及以該第二間隔關係緊固該複數個多孔徑向軸承，其中在兩個多孔止推軸承之間緊固各個多孔徑向軸承。
  2. 如請求項1所述之旋轉裝置，進一步包含：一第一氣體供應管線，該第一氣體供應管線經連接至各個多孔止推軸承；以及一第二氣體供應管線，該第二氣體供應管線經連接至各個多孔徑向軸承。
  3. 如請求項1所述之旋轉裝置，進一步包含： 一基板支撐表面，該基板支撐表面經緊固至該圓柱形內座圈；以及一線性弧形馬達，該線性弧形馬達嚙合該圓柱形內座圈。
  4. 如請求項2所述之旋轉裝置，其中該線性弧形馬達包含：一磁體單元，該磁體單元經緊固至該圓柱形內座圈之該環形部分之該平面；一線圈單元，該線圈單元經配置以旋轉該磁體單元；以及一編碼器。
  5. 如請求項1所述之旋轉裝置，其中該複數個多孔徑向軸承為等間隔分離的三個多孔徑向軸承。
  6. 如請求項5所述之旋轉裝置，其中該複數個多孔止推軸承為等間隔分離的三個多孔止推軸承。
  7. 如請求項2所述之旋轉裝置，其中將該第一氣體供應管線連接至一第一進氣口及將該第二氣體供應管線連接至一第二進氣口。
  8. 一種熱處理腔室，該熱處理腔室包含：一腔室主體，該腔室主體形成一內容積；以及 一旋轉裝置，該旋轉裝置安置於該內容積中，其中該旋轉裝置包含：一圓柱形內座圈，該圓柱形內座圈具有一薄壁及自該薄壁延伸的一環形部分，其中該薄壁之一圓柱形表面垂直於該環形部分之一平面；複數個多孔止推軸承，該複數個多孔止推軸承以一第一間隔關係鄰接該環形部分之該平面安置，該第一間隔關係容許該圓柱形內座圈相對於該複數個多孔止推軸承之旋轉；複數個多孔徑向軸承，該複數個多孔徑向軸承以一第二間隔關係鄰接該薄壁之該圓柱形表面安置，該第二間隔關係容許該圓柱形內座圈相對於該複數個多孔徑向軸承之旋轉；一支撐環，該支撐環以該第一間隔關係緊固該複數個多孔止推軸承及以該第二間隔關係緊固該複數個多孔徑向軸承，其中在兩個多孔止推軸承之間緊固各個多孔徑向軸承。一第一氣體供應管線，該第一氣體供應管線經連接至各個多孔止推軸承；以及一第二氣體供應管線，該第二氣體供應管線經連接至各個多孔徑向軸承。
  9. 如請求項8所述之熱處理腔室，進一步包含： 一基板支撐表面，該基板支撐表面經緊固至該圓柱形內座圈；以及一線性弧形馬達，該線性弧形馬達嚙合該圓柱形內座圈。
  10. 如請求項9所述之熱處理腔室，其中該線性弧形馬達包含：一磁體單元，該磁體單元經緊固至該圓柱形內座圈之該環形部分之該平面；一線圈單元，該線圈單元經配置以旋轉該磁體單元；以及一編碼器。
  11. 如請求項8所述之熱處理腔室，其中該複數個多孔徑向軸承為等間隔分離的三個多孔徑向軸承。
  12. 如請求項11所述之熱處理腔室，其中該複數個多孔止推軸承為等間隔分離的三個多孔止推軸承。
  13. 如請求項8所述之熱處理腔室，其中將該第一氣體供應管線連接至一第一進氣口及將該第二氣體供應管線連接至一第二進氣口。
  14. 如請求項9所述之熱處理腔室，進一步包含：一旋轉環，該旋轉環經緊固至該圓柱形內座圈；及一邊緣環，該邊緣環 經緊固至該旋轉環，其中該基板支撐表面為該邊緣環之一表面。
  15. 如請求項14所述之熱處理腔室，進一步包含一輻射能源，該輻射能源安置於該邊緣環下方。
  16. 如請求項15所述之熱處理腔室，進一步包含一反射器，該反射器安置於該邊緣環上方。
  17. 一種旋轉一基板之方法，該方法包含以下步驟：用一線性弧形馬達旋轉一圓柱形內座圈，其中將一基板支撐件緊固至該圓柱形內座圈；向複數個多孔止推軸承供應一惰性氣體以在一第一氣墊上支撐該圓柱形內座圈；以及向複數個多孔徑向軸承供應該惰性氣體以在一第二氣墊上使該圓柱形內座圈位於中心。
  18. 如請求項17所述之方法，其中該惰性氣體為氮氣。
  19. 如請求項18所述之方法，其中該旋轉速度範圍自約1rpm至約1000rpm。
  20. 如請求項17所述之方法，其中該複數個多孔止推軸承為等間隔分離的三個多孔止推軸承。
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