CN107546247A - A kind of active matrix organic light emitting diode display and preparation method thereof - Google Patents
A kind of active matrix organic light emitting diode display and preparation method thereof Download PDFInfo
- Publication number
- CN107546247A CN107546247A CN201710616464.9A CN201710616464A CN107546247A CN 107546247 A CN107546247 A CN 107546247A CN 201710616464 A CN201710616464 A CN 201710616464A CN 107546247 A CN107546247 A CN 107546247A
- Authority
- CN
- China
- Prior art keywords
- insulating film
- interlayer insulating
- layer
- mask plate
- emitting diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The present invention provides a kind of active matrix organic light emitting diode display and preparation method thereof, and the preparation method includes：Patterned process is carried out to first interlayer insulating film using the first mask plate, so that first interlayer insulating film positioned at viewing area forms two the first vias and first interlayer insulating film positioned at non-display area is formed Part I；Or patterned process is carried out to first interlayer insulating film using first mask plate, so that first interlayer insulating film positioned at viewing area forms two the first vias and first interlayer insulating film positioned at non-display area is formed Part II；Second via includes Part I and Part II.Active matrix organic light emitting diode display of the present invention and preparation method thereof, masking process can be reduced, reduce production cost.
Description
【Technical field】
The present invention relates to display technology field, more particularly to a kind of active matrix organic light emitting diode display and its
Preparation method.
【Background technology】
OLED can be divided into passive OLED (PMOLED) and active OLED (AMOLED) according to driving type.Wherein, active square
Battle array Organic Light Emitting Diode (Active-matrix organic light emitting diode, AMOLED) display is usual
Be by low temperature polycrystalline silicon (Low Temperature Poly-Silicon, LTPS) driving backboard and be electrically excited photosphere composition it is spontaneous
Optical assembly.Low temperature polycrystalline silicon has higher electron mobility, for AMOLED, have high score using low-temperature polysilicon silicon materials
Resolution, reaction speed are fast, high brightness, high aperture, low energy consumption the advantages that.
The preparation method of existing displayer mainly comprises the following steps：On underlay substrate buffer layer, have
It is edge layer, first grid insulating barrier, first grid, second grid insulating barrier, second grid, interlayer insulating film, source/drain, flat
Layer, anode, pixel defining layer and photoresistance separation material, but existing preparation method needs 11 light shields, therefore exposure can be taken
The more production capacity of machine, reduces production efficiency, increases production cost.
Therefore, it is necessary to a kind of active matrix organic light emitting diode display and preparation method thereof is provided, it is existing to solve
There is the problems of technology.
【The content of the invention】
, can it is an object of the invention to provide a kind of active matrix organic light emitting diode display and preparation method thereof
Masking process is reduced, improves production efficiency, reduces production cost.
In order to solve the above technical problems, the present invention provides a kind of making side of active matrix organic light emitting diode display
Method, it includes：
Flexible layer, separation layer, cushion, active layer, first grid insulating barrier, the first grid are sequentially formed on underlay substrate
Pole, second grid insulating barrier, second grid, the first interlayer insulating film；
Patterned process is carried out to first interlayer insulating film using the first mask plate, so that the institute positioned at viewing area
The first interlayer insulating film is stated to form two the first vias and form first interlayer insulating film positioned at non-display area
Part I；
Or patterned process is carried out to first interlayer insulating film using first mask plate, so that positioned at display
First interlayer insulating film in region forms two the first vias and makes first interlayer positioned at non-display area exhausted
Edge layer forms Part II；The position of wherein described two first vias respectively with the source electrode and the position pair of the drain electrode
Should；First interlayer insulating film of the non-display area is provided with the second via；Second via includes Part I and the
Two parts, the Part I are located on the Part II；And
The second interlayer insulating film, source/drain are sequentially formed on the first interlayer insulating film after patterned process, is put down
Smooth layer, anode, pixel defining layer and photoresistance separation material.
It is described to use the first mask plate in the preparation method of the active matrix organic light emitting diode display of the present invention
Patterned process is carried out to first interlayer insulating film, is additionally operable to make the first interlayer insulating film shape positioned at the viewing area
Into the 3rd via, the 3rd via is used for the viewing area for bending the active matrix organic light emitting diode display.
It is described to use the first mask plate in the preparation method of the active matrix organic light emitting diode display of the present invention
Patterned process is carried out to first interlayer insulating film, so that first interlayer insulating film positioned at viewing area forms two
The step of individual first via and first interlayer insulating film formation Part I for making to be located at non-display area, includes：
The first photoresist is coated with first interlayer insulating film, using first mask plate to first photoetching
Glue is exposed development, to limit the first etching area；
First interlayer insulating film corresponding to first etching area is etched, to form described two first vias
With the Part I.
It is described to use the first mask plate in the preparation method of the active matrix organic light emitting diode display of the present invention
Patterned process is carried out to first interlayer insulating film, so that first interlayer insulating film positioned at viewing area forms two
Individual first via and make positioned at non-display area first interlayer insulating film formed Part I the step of after, it is described
Method also includes：
Patterned process is carried out to first interlayer insulating film using the second mask plate, makes the institute positioned at non-display area
State the first interlayer insulating film and form the Part II.
It is described to use the first mask plate in the preparation method of the active matrix organic light emitting diode display of the present invention
Patterned process is carried out to first interlayer insulating film, so that first interlayer insulating film positioned at viewing area forms two
Individual first via and make positioned at non-display area first interlayer insulating film formed Part II the step of before, it is described
Method also includes：
Patterned process is carried out to first interlayer insulating film using the second mask plate, makes the institute positioned at non-display area
State the first interlayer insulating film and form the Part I.
In the preparation method of the active matrix organic light emitting diode display of the present invention, described two first vias point
The source electrode and the active layer Yong Yu not connected and be connected the drain electrode and the active layer.
The present invention active matrix organic light emitting diode display preparation method in, on the flatness layer formed with
4th via, the 4th via are used to connect the anode and the drain electrode.
The present invention also provides a kind of active matrix organic light emitting diode display, and it includes：
It is sequentially located at flexible layer on underlay substrate, separation layer, cushion, active layer, first grid insulating barrier, the first grid
Pole, second grid insulating barrier, second grid, the first interlayer insulating film, the second interlayer insulating film, source/drain, flatness layer, anode,
Pixel defining layer and photoresistance separation material；
First interlayer insulating film positioned at viewing area is provided with two the first vias and positioned at non-display area
First interlayer insulating film be provided with the second via；Second via includes Part I and Part II, and described
A part on the Part II, the positions of described two first vias respectively with the source electrode and the position of the drain electrode
It is corresponding；
Wherein described first via and the Part I are that first interlayer insulating film is entered using the first mask plate
Row patterned process obtains；Or first via and the Part II are to described the using first mask plate
Interbedded insulating layer carries out what patterned process obtained.
In the active matrix organic light emitting diode display of the present invention, first interlayer positioned at viewing area is exhausted
Edge layer is additionally provided with the 3rd via, and first via, the Part I and the 3rd via are to use described first
Mask plate carries out what patterned process obtained to first interlayer insulating film, and the 3rd via is used to bend the active square
The viewing area of battle array organic light emitting diode display.
In the active matrix organic light emitting diode display of the present invention, first interlayer positioned at viewing area is exhausted
Edge layer is additionally provided with the 3rd via, and first via, the Part II and the 3rd via are to use described first
Mask plate carries out what patterned process obtained to first interlayer insulating film, and the 3rd via is used to bend the active square
The viewing area of battle array organic light emitting diode display.
Active matrix organic light emitting diode display of the present invention and preparation method thereof, by using the mask plate with along with
Patterned process is carried out to the first interlayer insulating film, to form the hole outside the source-drain electrode hole and viewing area of viewing area, so as to
Reduce masking process, improve production efficiency, reduce production cost.
【Brief description of the drawings】
Fig. 1 is the first cross-sectional view of displayer of the present invention；
Fig. 2 is the first structural representation step by step in the first step of preparation method the 5th of Fig. 1 displayer；
Fig. 3 is the second structural representation step by step in the first step of preparation method the 5th of Fig. 1 displayer；
Fig. 4 is the structural representation of the first step of preparation method the 6th of Fig. 1 displayer；
Fig. 5 is the structural representation of the step of second of preparation method the 5th of Fig. 1 displayer；
Fig. 6 is the structural representation of the step of second of preparation method the 6th of Fig. 1 displayer；
Fig. 7 is second of cross-sectional view of displayer of the present invention；
Fig. 8 is the structural representation of Fig. 7 step of displayer preparation method the 5th.
Fig. 9 is the structural representation of Fig. 7 step of displayer preparation method the 6th.
【Embodiment】
The explanation of following embodiment is with reference to additional schema, to illustrate the particular implementation that the present invention can be used to implementation
Example.The direction term that the present invention is previously mentioned, such as " on ", " under ", "front", "rear", "left", "right", " interior ", " outer ", " side "
Deng being only the direction with reference to annexed drawings.Therefore, the direction term used is to illustrate and understand the present invention, and is not used to
The limitation present invention.In figure, the similar unit of structure is represented with identical label.
The structure of existing displayer is identical with Fig. 1, and its preparation method mainly comprises the following steps：
S101, flexible layer 12, separation layer 13 and cushion 14 are sequentially depositing on underlay substrate 11.
S102, on cushion 14 formed with edge layer 15, there is edge layer 15 to pattern this by one of optical cover process
Processing forms raceway groove.
Specifically, there is edge layer 15 to be exposed this by mask plate and be developed to raceway groove.
S103, the first gate insulation layer 16 and the first metal layer 17 are formed on active layer 15, pass through one of optical cover process pair
The first metal layer 17 carries out patterned process and forms first grid.
S104, the second gate insulation layer 18 and second metal layer 19 are formed on the first metal layer 17, pass through one of light shield system
Journey carries out patterned process to the second metal layer 19 and forms second grid.
S105, the first interlayer insulating film 20 is formed in second metal layer 19, viewing area is formed by three optical cover process
Overseas via, initial source electrode via and initial drain via.
Specifically, because the via depth of viewing area 101 outer (non-display area) is deep, it is therefore desirable to carry out secondary
Optical cover process carries out patterned process to the first interlayer insulating film 20, the via formed outside viewing area.For example pass through one of light
After cover processing procedure carries out first time patterned process to the first interlayer insulating film 20 of non-display area so that the mistake outside viewing area
Hole extends to cushion 14 from the first interlayer insulating film 20, namely the bottom of via is located at cushion 14.Pass through one of light shield again
Processing procedure carries out second of patterned process to the cushion 14 of non-display area, deepens the depth of the via, for example make the mistake
The bottom in hole is located at separation layer 13.And then the first interlayer insulating film 20 in viewing area is entered by one of optical cover process
After row third time patterned process, initial source electrode and drain holes are formed.
S106, the first interlayer insulating film 20 formed the second interlayer insulating film 21, by one of optical cover process to viewing area
The second interlayer insulating film 21 in domain carries out patterned process and forms final source, drain via 202,203.
S107, the 3rd metal level 22 is formed on the second interlayer insulating film 21, by one of optical cover process to the 3rd gold medal
Belong to layer 22 and carry out patterned process formation source electrode and drain electrode, wherein source electrode and drain electrode and source hole and the position correspondence of drain holes.
S108, form flatness layer 23 on the 3rd metal level 22, figure is carried out to the flatness layer 22 by one of optical cover process
Case processing forms via 204.
S109, conductive layer 24 is formed on flatness layer 23, the conductive layer 24 is patterned by one of optical cover process
Processing forms anode.
S110, pixel defining layer 25 and photoresistance wall are formed on conductive layer 24, by one of optical cover process to the picture
Plain definition layer 25 and photoresistance wall carry out the pixel defining layer 25 and photoresistance sept 26 that patterned process forms predetermined pattern.
It can be seen that existing preparation method needs 11 masking process, therefore takes the more production capacity of exposure machine, life is reduced
Efficiency is produced, increases production cost.
Fig. 1-3 is refer to, Fig. 1 is the first cross-sectional view of displayer of the present invention.
First embodiment of the invention provides a kind of displayer, and the displayer is such as static buckling type
AMOLED.As shown in figure 1, the preparation method of the displayer includes：
S201, flexible layer 12, separation layer 13 and cushion 14 are sequentially depositing on underlay substrate 11.
S202, on cushion 14 formed with edge layer 15, there is edge layer 15 to pattern this by one of optical cover process
Processing forms raceway groove.
Specifically, by the coating photoresist on having edge layer 15, reuse mask plate and development be exposed to the photoresist,
And form raceway groove after being etched to active layer 15.
S203, the first gate insulation layer 16 and the first metal layer 17 are formed on active layer 15, pass through one of optical cover process pair
The first metal layer 17 carries out patterned process and forms first grid.
S204, the second gate insulation layer 18 and second metal layer 19 are formed on the first metal layer 17, pass through one of light shield system
Journey carries out patterned process to the second metal layer 19 and forms second grid.
S205, the first interlayer insulating film 20 is formed in second metal layer 19, using the first mask plate to the first layer
Between insulating barrier 20 carry out patterned process so that positioned at viewing area 101 first interlayer insulating film formed two first
Via and make positioned at non-display area (part beyond 101) first interlayer insulating film 20 formed Part I.
With reference to Fig. 2 to 4, the first interlayer insulating film 20 of the non-display area is provided with the second via 201；Described second
Via includes Part I 201 ' and Part II (part between 201 ' to 201), and the Part I 201 ' is positioned at described
On Part II.Second via 201 is used to bend non-display area.
The step namely：Synchronously made in the first stage for making the second via 201 ' two the first vias 202 ' and
203’.As shown in figure 3, described two first vias are 202 ' and 203 ', its position respectively with the source electrode and the drain electrode
Position correspondence, described two first vias 202 ' and 203 ' are used to connect the source electrode and the active layer 15 and are connected institute
State drain electrode and the active layer 15.The material of first interlayer insulating film 20 is insulating materials.
Described the step of carrying out patterned process to first interlayer insulating film 20 using the first mask plate, includes：
S2051, the coating photoresist on first interlayer insulating film, the photoresist is carried out using the first mask plate
Exposure imaging, to limit etching area.
For example, as shown in Fig. 2 on the first interlayer insulating film 20 coating photoresist 27, afterwards use with along with mask plate
Development is exposed to the photoresist 27, etching area 271 is formed to limit, specifically the etching area 271 and two the
The position correspondence of one via and the second via.
The mask plate 30 used in the step includes multiple transmission regions 31 (namely white portion) and multiple light tight areas
Domain 32 (black portions).The wherein position correspondence of the position of transmission region 31 and via, namely respectively with two the first vias and
Position corresponding to second via is provided with transmission region 31.
S2052, the first interlayer insulating film 20 corresponding to the etching area is etched, to form described two first
The Part I 201 ' of the via of via 202 ', 203 ' and second.
After the etch is completed, then photoresist is removed.As shown in figure 3, Fig. 3 provides the schematic diagram after removing photoresist, pass through
After above-mentioned steps, the depth ratio of the via 201 ' of non-display area is shallower, and the via extends to slow from the first interlayer insulating film 20
Layer 14 is rushed, namely the bottom of via 201 ' is located at cushion 14.Therefore need again by one of optical cover process to non-display area
The first interlayer insulating film 20 carry out second of patterned process, deepen the depth of the via.
S206, using the second mask plate to first interlayer insulating film carry out patterned process, make to be located at non-display area
First interlayer insulating film in domain forms the Part II.
For example, the coating photoresist on first interlayer insulating film 20 again, using the second mask plate to the photoetching
Glue is exposed development, to limit another etching area, afterwards to the lower section of Part I 201 ' corresponding to the etching area
It is etched, makes the depth down of the second via, to form Part II, namely completes the processing procedure of the second via 201.Etching
After the completion of, remove the photoresist.As shown in figure 4, Fig. 4 provides the schematic diagram after removing photoresist, make final second via 201
Bottom be located at separation layer 13.
The position correspondence of etching area and the second via 201 in the step.Wherein second mask plate is only in the second mistake
Position corresponding to hole 201 is provided with transmission region.
S207, the first interlayer insulating film 20 formed the second interlayer insulating film 21, by one of optical cover process to the second layer
Between insulating barrier 21 carry out patterned process form final source, drain via 202,203.
The material of second interlayer insulating film 21 is photoresist.
S208, the 3rd metal level 22 is formed on the second interlayer insulating film 21, by one of optical cover process to the 3rd gold medal
Belong to layer 22 and carry out patterned process formation source electrode and drain electrode, wherein source electrode and the position pair with source hole and drain holes respectively that drains
Should.
S209, form flatness layer 23 on the 3rd metal level 22, figure is carried out to the flatness layer 22 by one of optical cover process
Case processing forms via 204, namely the 4th via.
4th via 204 is used to connect the anode and the drain electrode.
S210, conductive layer 24 is formed on flatness layer 23, the conductive layer 24 is patterned by one of optical cover process
Processing forms anode.
S211, pixel defining layer 25 and photoresistance wall are formed on conductive layer 24, by one of optical cover process to the picture
Plain definition layer 25 and photoresistance wall carry out the pixel defining layer 25 and photoresistance sept 26 that patterned process forms predetermined pattern.
The present embodiment provides a kind of displayer, its flexible layer 12 for including being sequentially located on underlay substrate 11, every
Absciss layer 13, cushion 14, active layer 15, first grid insulating barrier 16, first grid (are that the first metal layer 17 is patterned
Processing obtains), second grid insulating barrier 18, second grid (carrying out patterned process to second metal layer 19 to obtain),
First interlayer insulating film 20, the second interlayer insulating film 21, source/drain (are to carry out patterned process to the 3rd metal level 22 to obtain
), flatness layer 23, anode 24, pixel defining layer 25 and photoresistance separation material 26.
Wherein, first interlayer insulating film 20 positioned at viewing area 101 is provided with two the first vias and is located at
First interlayer insulating film 20 of non-display area is provided with the second via；Second via 201 includes Part I
201 ' and Part II, the Part I 201 ' be located on the Part II, described two first vias 202 ' and 203 '
Position respectively with the source electrode and the position correspondence of the drain electrode；Wherein described first via 202 ', 203 ' and described first
Part 201 ' is exposed what development obtained using same mask plate 30 to first interlayer insulating film 20.
Described two first vias 202 ', 203 ' are respectively used to connect the source electrode and the active layer 15 and are connected
The drain electrode and the active layer 15.
Be provided with the 4th via 204 on the flatness layer 22, the 4th via 204 be used to connecting the anode with it is described
Drain electrode.
Active matrix organic light emitting diode display of the present invention and preparation method thereof, by using the mask plate with along with
Patterned process, the hole formed outside the source-drain electrode hole and viewing area of viewing area, so as to subtract are carried out to the first interlayer insulating film
Lack masking process, improved production efficiency, reduce production cost.
Fig. 5-6 are refer to, second embodiment of the invention provides a kind of displayer, and the displayer is such as
Static buckling type AMOLED.The difference of the preparation method of the displayer and a upper embodiment is：Form the first via
Order it is different namely different from the step S205 and S206 of a upper embodiment.Above-mentioned steps S205 and S206 are replaced with respectively：
S301, the first interlayer insulating film 20 is formed in second metal layer 19, using the second mask plate to the first layer
Between insulating barrier 20 carry out patterned process, first interlayer insulating film 20 positioned at non-display area is formed described first
Divide 201 '.
For example, the coating photoresist on first interlayer insulating film 20, is entered using the second mask plate to the photoresist
Row exposure imaging, to limit etching area, the position correspondence of the etching area and the second via, wherein second mask plate are only
Position corresponding to second via 201 is provided with transmission region.Afterwards to the first interlayer insulating film 20 corresponding to the etching area
It is etched, to form Part I 201 '.After the etch is completed, the photoresist is removed.As shown in figure 5, Fig. 5 provides removal
Schematic diagram after photoresist, the bottom of the Part I 201 ' are located at cushion 14.
After above-mentioned steps, the depth ratio of the via 201 ' of the non-display area is shallower, and the via is exhausted from the first interlayer
Edge layer 20 extends to cushion 14, namely the bottom of via 201 ' is located at cushion 14.Therefore need again by one of light shield system
Journey carries out second of patterned process to the first interlayer insulating film 20 of non-display area, deepens the depth of the via.
S302, using first mask plate patterned process is carried out to first interlayer insulating film, so that positioned at aobvious
Show that first interlayer insulating film in region forms two the first vias and makes first interlayer for being located at non-display area
Insulating barrier forms Part II.The step specifically may include：
S3021, the coating photoresist on first interlayer insulating film 20, the photoresist is entered using the first mask plate
Row exposure imaging, to limit etching area；
For example, as shown in fig. 6, on the first interlayer insulating film 20 coating photoresist 27, afterwards use with along with mask plate
Development is exposed to the photoresist 27, with limit form other etching area 271, specifically the etching area 271 with
The position correspondence of two the first vias and the second via.The mask plate 30 used in the step and mask plate in step S2051
Structure is identical.
S3022, the first interlayer insulating film 20 corresponding to etching area is etched, to form described two first vias
202 ', 203 ' and second via Part II.
Fig. 4 is returned, the first interlayer insulating film 20 corresponding to the etching area in left side is etched, it is described two to be formed
First via 202 ', 203 ', and to being etched corresponding to the etching area on right side below Part I 201 ', make second
The depth down of via, to form Part II, namely complete the processing procedure of the second via 201.After the etch is completed, then light is removed
Photoresist.
The difference of the displayer of the present embodiment and a upper embodiment is, first via 202 ', 203 ' and
The Part II carries out patterned process to first interlayer insulating film 20 using the first mask plate and obtained.
Active matrix organic light emitting diode display of the present invention and preparation method thereof, by using the mask plate with along with
Patterned process, the hole formed outside the source-drain electrode hole and viewing area of viewing area, so as to subtract are carried out to the first interlayer insulating film
Lack masking process, improved production efficiency, reduce production cost.
It refer to second of cross-sectional view that Fig. 7 to 9, Fig. 7 is displayer of the present invention.
Third embodiment of the invention provides a kind of displayer, and the displayer is such as dynamic bending type
AMOLED.As shown in figure 8, the difference of the preparation method of the displayer and a upper embodiment is：First layer insulation
The patterned process process of layer is different, namely different from the step S205 of a upper embodiment.Above-mentioned steps S205 is replaced with：
S401, the first interlayer insulating film 40 is formed in second metal layer 19, using the first mask plate to the first layer
Between insulating barrier 40 carry out patterned process so that first interlayer insulating film 40 positioned at viewing area 101 forms two the
One via, the 3rd via and first interlayer insulating film 40 positioned at non-display area (part beyond dotted line frame) are formed
Part I.
For example, as shown in figure 8, on the first interlayer insulating film 40 coating photoresist 28, afterwards use with along with mask plate
Development is exposed to the photoresist 28, etching area 281 is formed to limit, specifically the etching area 281 and two the
The position correspondence of one the 202 ', 203 ', second via 201 of via and the 3rd via 205.
The mask plate 50 used in the step includes multiple transmission regions 51 (namely white portion) and multiple light tight areas
Domain 52 (black portions).The wherein position correspondence of the position of transmission region and via, namely respectively with two the first vias 202 ',
Position corresponding to 203 ', second via 201 and the 3rd via 205 is provided with transmission region 51.
Certainly also need to be etched the first interlayer insulating film 40 corresponding to etching area 281 after development, so that
Obtain the Part I that the first interlayer insulating film 40 forms the via of via 202 ', 203 ', 205 and second after the etching.
Because the depth requirements to the second via are deep, therefore also need to etch the second via again, with shape
It is specifically identical with step S206 into the second final via 201, it will not be repeated here.
As shown in figure 9, described two first vias be 202 ', 203 ', its position respectively with the source electrode and the drain electrode
Position correspondence, described two first vias 202 ', 203 ' are used to connect the source electrode and the active layer 15 and are connected institute
State drain electrode and the active layer 15.
3rd via 205 is used for the viewing area for bending the active matrix organic light emitting diode display.
The embodiment of the present invention also provides a kind of displayer, and the difference of itself and first embodiment is, positioned at display
First interlayer insulating film 40 in region 101 is provided with two vias 205 of the first via the 202 ', 203 ', the 3rd and is located at
First interlayer insulating film 20 of non-display area is provided with the second via 201；Described two first vias 202 ', 203 '
Position respectively with the source electrode and the position correspondence of the drain electrode；First via 202 ', 203 ' and the 3rd via 205
And the Part I of second via be first interlayer insulating film 40 is exposed using the first mask plate 50 it is aobvious
What shadow obtained.
Active matrix organic light emitting diode display of the present embodiment and preparation method thereof, by using the mask with along with
Plate carries out patterned process to the first interlayer insulating film, is formed outside source-drain electrode hole, bent hole and the viewing area of viewing area
Hole, so as to reduce masking process, production efficiency is improved, reduces production cost.
Fourth embodiment of the invention provides a kind of displayer, and the displayer is such as dynamic bending type
AMOLED.The difference of the preparation method of the displayer and a upper embodiment is：It is different to form the order of the 3rd via,
It is namely different from the step S401 of a upper embodiment.With reference to Fig. 7 and 8, specifically replace with：
S501, the first interlayer insulating film 40 is formed in second metal layer 19, using the second mask plate to the first layer
Between insulating barrier 40 carry out patterned process, first interlayer insulating film 40 positioned at non-display area is formed described first
Point.Specific steps are identical with S301.
Afterwards, patterned process is carried out to first interlayer insulating film 40 using first mask plate 50, so that position
First interlayer insulating film in viewing area forms two the first vias, the 3rd via and made positioned at non-display area
First interlayer insulating film forms Part II.The structure of the mask plate 50 used in the step and step S401 mask plate
Identical, specific steps are similar with S302, will not be repeated here.
The embodiment of the present invention also provides a kind of displayer, and the difference of itself and a upper embodiment is, and described first
The Part II of via 202 ', 203 ' and the 3rd via 205 and second via is right using the first mask plate 50
First interlayer insulating film 40 is exposed what development obtained.
In summary, although the present invention is disclosed above with preferred embodiment, above preferred embodiment simultaneously is not used to limit
The system present invention, one of ordinary skill in the art, without departing from the spirit and scope of the present invention, it can make various changes and profit
Decorations, therefore protection scope of the present invention is defined by the scope that claim defines.
Claims (10)
- A kind of 1. preparation method of active matrix organic light emitting diode display, it is characterised in that including：Sequentially formed on underlay substrate flexible layer, separation layer, cushion, active layer, first grid insulating barrier, first grid, Second grid insulating barrier, second grid, the first interlayer insulating film；Patterned process is carried out to first interlayer insulating film using the first mask plate, so that described the positioned at viewing area Interbedded insulating layer forms two the first vias and first interlayer insulating film positioned at non-display area is formed first Part；Or patterned process is carried out to first interlayer insulating film using first mask plate, so as to be located at viewing area First interlayer insulating film form two the first vias and make first interlayer insulating film positioned at non-display area Form Part II；The position of wherein described two first vias respectively with the source electrode and the position correspondence of the drain electrode；Institute The first interlayer insulating film for stating non-display area is provided with the second via；Second via includes Part I and second Point, the Part I is located on the Part II；AndThe second interlayer insulating film, source/drain, flat is sequentially formed on the first interlayer insulating film after patterned process Layer, anode, pixel defining layer and photoresistance separation material.
- 2. the preparation method of active matrix organic light emitting diode display according to claim 1, it is characterised in that institute State and patterned process is carried out to first interlayer insulating film using the first mask plate, be additionally operable to make positioned at the viewing area First interlayer insulating film forms the 3rd via, and the 3rd via is shown for bending the active matrix organic light-emitting diode The viewing area of device.
- 3. the preparation method of active matrix organic light emitting diode display according to claim 1, it is characterised in that institute State and patterned process is carried out to first interlayer insulating film using the first mask plate, so that described first positioned at viewing area Interlayer insulating film forms two the first vias and first interlayer insulating film positioned at non-display area is formed first The step of dividing includes：The first photoresist is coated with first interlayer insulating film, first photoresist is entered using first mask plate Row exposure imaging, to limit the first etching area；First interlayer insulating film corresponding to first etching area is etched, to form described two first vias and institute State Part I.
- 4. the preparation method of active matrix organic light emitting diode display according to claim 1, it is characterised in that institute State and patterned process is carried out to first interlayer insulating film using the first mask plate, so that described first positioned at viewing area Interlayer insulating film forms two the first vias and first interlayer insulating film positioned at non-display area is formed first After the step of dividing, methods described also includes：Patterned process is carried out to first interlayer insulating film using the second mask plate, makes described the positioned at non-display area Interbedded insulating layer forms the Part II.
- 5. the preparation method of active matrix organic light emitting diode display according to claim 1, it is characterised in that institute State and patterned process is carried out to first interlayer insulating film using the first mask plate, so that described first positioned at viewing area Interlayer insulating film forms two the first vias and first interlayer insulating film positioned at non-display area is formed second Before the step of dividing, methods described also includes：Patterned process is carried out to first interlayer insulating film using the second mask plate, makes described the positioned at non-display area Interbedded insulating layer forms the Part I.
- 6. the preparation method of active matrix organic light emitting diode display according to claim 1, it is characterised in that institute Two the first vias are stated to be respectively used to connect the source electrode and the active layer and be connected the drain electrode and the active layer.
- 7. the preparation method of active matrix organic light emitting diode display according to claim 1, it is characterised in that institute State formed with the 4th via on flatness layer, the 4th via is used to connect the anode and the drain electrode.
- A kind of 8. active matrix organic light emitting diode display, it is characterised in that including：Be sequentially located at flexible layer on underlay substrate, separation layer, cushion, active layer, first grid insulating barrier, first grid, Second grid insulating barrier, second grid, the first interlayer insulating film, the second interlayer insulating film, source/drain, flatness layer, anode, as Plain definition layer and photoresistance separation material；First interlayer insulating film positioned at viewing area is provided with two the first vias and the institute positioned at non-display area State the first interlayer insulating film and be provided with the second via；Second via includes Part I and Part II, described first Point on the Part II, the positions of described two first vias respectively with the source electrode and the position pair of the drain electrode Should；Wherein described first via and the Part I are to carry out figure to first interlayer insulating film using the first mask plate Case handles what is obtained；Or first via and the Part II are to the first layer using first mask plate Between insulating barrier carry out patterned process and obtain.
- 9. active matrix organic light emitting diode display according to claim 8, it is characterised in that positioned at viewing area First interlayer insulating film be additionally provided with the 3rd via, first via, the Part I and the 3rd mistake Hole carries out patterned process to first interlayer insulating film using first mask plate and obtained, and the 3rd via is used In the viewing area for bending the active matrix organic light emitting diode display.
- 10. active matrix organic light emitting diode display according to claim 8, it is characterised in that positioned at viewing area First interlayer insulating film in domain is additionally provided with the 3rd via, first via, the Part II and the described 3rd Via carries out patterned process to first interlayer insulating film using first mask plate and obtained, the 3rd via For bending the viewing area of the active matrix organic light emitting diode display.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710616464.9A CN107546247B (en) | 2017-07-26 | 2017-07-26 | Active matrix organic light emitting diode display and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710616464.9A CN107546247B (en) | 2017-07-26 | 2017-07-26 | Active matrix organic light emitting diode display and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107546247A true CN107546247A (en) | 2018-01-05 |
| CN107546247B CN107546247B (en) | 2020-03-17 |
Family
ID=60970993
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710616464.9A Active CN107546247B (en) | 2017-07-26 | 2017-07-26 | Active matrix organic light emitting diode display and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107546247B (en) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108288637A (en) * | 2018-01-24 | 2018-07-17 | 武汉华星光电半导体显示技术有限公司 | The production method and flexible display panels of flexible display panels |
| CN108766992A (en) * | 2018-06-12 | 2018-11-06 | 武汉华星光电半导体显示技术有限公司 | A kind of active matrix organic light emitting diode display and preparation method thereof |
| CN109003989A (en) * | 2018-07-27 | 2018-12-14 | 厦门天马微电子有限公司 | Array substrate and preparation method thereof, display panel and display device |
| CN109166880A (en) * | 2018-07-25 | 2019-01-08 | 武汉华星光电半导体显示技术有限公司 | Flexible OLED display panel and preparation method thereof |
| CN109671748A (en) * | 2018-12-12 | 2019-04-23 | 武汉华星光电半导体显示技术有限公司 | A kind of display panel and preparation method thereof |
| CN110176429A (en) * | 2019-04-08 | 2019-08-27 | 北海惠科光电技术有限公司 | A kind of production method and array substrate, display panel of array substrate |
| CN110233155A (en) * | 2019-06-26 | 2019-09-13 | 武汉华星光电半导体显示技术有限公司 | A kind of array substrate and preparation method thereof, display panel |
| WO2020015084A1 (en) * | 2018-07-17 | 2020-01-23 | 深圳市华星光电半导体显示技术有限公司 | Array substrate preparation method and array substrate |
| CN111106149A (en) * | 2019-12-04 | 2020-05-05 | 武汉华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
| CN111293080A (en) * | 2020-02-18 | 2020-06-16 | 武汉华星光电半导体显示技术有限公司 | Preparation method of display panel and display panel |
| CN111584555A (en) * | 2020-05-06 | 2020-08-25 | 武汉华星光电半导体显示技术有限公司 | Manufacturing method of array substrate, array substrate and display device |
| WO2021114471A1 (en) * | 2019-12-11 | 2021-06-17 | 武汉华星光电半导体显示技术有限公司 | Array substrate and fabricating method therefor, and display panel |
| US11271057B2 (en) * | 2020-02-12 | 2022-03-08 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Array substrate, manufacturing method thereof, and display panel |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102116980A (en) * | 2009-12-31 | 2011-07-06 | 乐金显示有限公司 | Thin film transistor array substrate and method for fabricating the same |
| CN103928475A (en) * | 2014-04-10 | 2014-07-16 | 昆山龙腾光电有限公司 | TFT array substrate, display panel and manufacturing method of display panel |
| CN104377167A (en) * | 2014-11-13 | 2015-02-25 | 京东方科技集团股份有限公司 | Thin film transistor array substrate, manufacturing method thereof, display panel and display device |
| CN106154650A (en) * | 2016-08-03 | 2016-11-23 | 深圳市华星光电技术有限公司 | The manufacture method of a kind of curved surface liquid crystal panel, curved surface liquid crystal panel and display device |
| CN106486491A (en) * | 2015-08-31 | 2017-03-08 | 乐金显示有限公司 | Back plane substrate and use its flexible display |
| US20170205656A1 (en) * | 2016-01-20 | 2017-07-20 | Samsung Display Co., Ltd. | Liquid crystal display device and manufacturing method thereof |
-
2017
- 2017-07-26 CN CN201710616464.9A patent/CN107546247B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102116980A (en) * | 2009-12-31 | 2011-07-06 | 乐金显示有限公司 | Thin film transistor array substrate and method for fabricating the same |
| CN103928475A (en) * | 2014-04-10 | 2014-07-16 | 昆山龙腾光电有限公司 | TFT array substrate, display panel and manufacturing method of display panel |
| CN104377167A (en) * | 2014-11-13 | 2015-02-25 | 京东方科技集团股份有限公司 | Thin film transistor array substrate, manufacturing method thereof, display panel and display device |
| CN106486491A (en) * | 2015-08-31 | 2017-03-08 | 乐金显示有限公司 | Back plane substrate and use its flexible display |
| US20170205656A1 (en) * | 2016-01-20 | 2017-07-20 | Samsung Display Co., Ltd. | Liquid crystal display device and manufacturing method thereof |
| CN106154650A (en) * | 2016-08-03 | 2016-11-23 | 深圳市华星光电技术有限公司 | The manufacture method of a kind of curved surface liquid crystal panel, curved surface liquid crystal panel and display device |
Cited By (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108288637B (en) * | 2018-01-24 | 2021-03-02 | 武汉华星光电半导体显示技术有限公司 | Manufacturing method of flexible display panel and flexible display panel |
| US11114627B2 (en) | 2018-01-24 | 2021-09-07 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Manufacturing method for flexible display panel and flexible display panel comprising concave tapered organic layer |
| CN108288637A (en) * | 2018-01-24 | 2018-07-17 | 武汉华星光电半导体显示技术有限公司 | The production method and flexible display panels of flexible display panels |
| CN108766992A (en) * | 2018-06-12 | 2018-11-06 | 武汉华星光电半导体显示技术有限公司 | A kind of active matrix organic light emitting diode display and preparation method thereof |
| WO2019237498A1 (en) * | 2018-06-12 | 2019-12-19 | 武汉华星光电半导体显示技术有限公司 | Active-matrix organic light emitting diode display and manufacturing method therefor |
| CN108766992B (en) * | 2018-06-12 | 2021-06-01 | 武汉华星光电半导体显示技术有限公司 | Active matrix organic light emitting diode display and manufacturing method thereof |
| WO2020015084A1 (en) * | 2018-07-17 | 2020-01-23 | 深圳市华星光电半导体显示技术有限公司 | Array substrate preparation method and array substrate |
| CN109166880A (en) * | 2018-07-25 | 2019-01-08 | 武汉华星光电半导体显示技术有限公司 | Flexible OLED display panel and preparation method thereof |
| CN109003989A (en) * | 2018-07-27 | 2018-12-14 | 厦门天马微电子有限公司 | Array substrate and preparation method thereof, display panel and display device |
| CN109671748A (en) * | 2018-12-12 | 2019-04-23 | 武汉华星光电半导体显示技术有限公司 | A kind of display panel and preparation method thereof |
| US11227878B2 (en) | 2018-12-12 | 2022-01-18 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Display panel, manufacturing method for the display panel, and display device |
| WO2020118956A1 (en) * | 2018-12-12 | 2020-06-18 | 武汉华星光电半导体显示技术有限公司 | Display panel and manufacturing method therefor, and display device |
| CN110176429A (en) * | 2019-04-08 | 2019-08-27 | 北海惠科光电技术有限公司 | A kind of production method and array substrate, display panel of array substrate |
| CN110176429B (en) * | 2019-04-08 | 2021-04-13 | 北海惠科光电技术有限公司 | Manufacturing method of array substrate, array substrate and display panel |
| WO2020258465A1 (en) * | 2019-06-26 | 2020-12-30 | 武汉华星光电半导体显示技术有限公司 | Array substrate, manufacturing method therefor, and display panel |
| CN110233155B (en) * | 2019-06-26 | 2021-02-26 | 武汉华星光电半导体显示技术有限公司 | Array substrate, manufacturing method thereof and display panel |
| US11495621B2 (en) | 2019-06-26 | 2022-11-08 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Array substrate, display panel, and method of manufacturing the array substrate |
| CN110233155A (en) * | 2019-06-26 | 2019-09-13 | 武汉华星光电半导体显示技术有限公司 | A kind of array substrate and preparation method thereof, display panel |
| CN111106149B (en) * | 2019-12-04 | 2022-07-12 | 武汉华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
| CN111106149A (en) * | 2019-12-04 | 2020-05-05 | 武汉华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
| WO2021114471A1 (en) * | 2019-12-11 | 2021-06-17 | 武汉华星光电半导体显示技术有限公司 | Array substrate and fabricating method therefor, and display panel |
| US11271057B2 (en) * | 2020-02-12 | 2022-03-08 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Array substrate, manufacturing method thereof, and display panel |
| CN111293080A (en) * | 2020-02-18 | 2020-06-16 | 武汉华星光电半导体显示技术有限公司 | Preparation method of display panel and display panel |
| CN111293080B (en) * | 2020-02-18 | 2024-05-31 | 武汉华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
| CN111584555A (en) * | 2020-05-06 | 2020-08-25 | 武汉华星光电半导体显示技术有限公司 | Manufacturing method of array substrate, array substrate and display device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107546247B (en) | 2020-03-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107546247A (en) | A kind of active matrix organic light emitting diode display and preparation method thereof | |
| CN106653768B (en) | TFT backboard and manufacturing method thereof | |
| CN104867942B (en) | The preparation method and its structure of TFT substrate | |
| CN105097675B (en) | Array base palte and preparation method thereof | |
| KR20200034805A (en) | Manufacturing method of flexible display panel and flexible display panel | |
| CN109935621A (en) | Array substrate and its manufacturing method, display device | |
| CN107394057B (en) | Organic light emitting display panel and manufacturing method thereof | |
| EP1369936A2 (en) | Active Matrix Electro-Luminescent (Amel) display panel and method for fabricating the same | |
| CN104810382A (en) | AMOLED (active matrix/organic light emitting diode) backboard production method and AMOLED backboard structure | |
| CN102709243B (en) | Organic light-emitting diode display panel and manufacturing method thereof | |
| US10943984B2 (en) | Thin film transistor and manufacturing method thereof, display substrate and manufacturing method thereof, and display device | |
| WO2017031940A1 (en) | Array substrate, fabrication method therefor, and display device | |
| CN112071889B (en) | Array substrate, display device and manufacturing method | |
| US11114477B2 (en) | Array substrate and manufacturing method thereof | |
| KR20120116782A (en) | Fabricating method of organic light emitting diode display | |
| CN107546246B (en) | Flexible OLED display device and manufacturing method | |
| CN108766992A (en) | A kind of active matrix organic light emitting diode display and preparation method thereof | |
| CN110416274B (en) | Substrate, preparation method thereof and OLED display panel | |
| CN109148739A (en) | A kind of flexible organic light emitting diode display and preparation method thereof | |
| CN110071148A (en) | Organic LED display device and its manufacturing method | |
| US11251382B2 (en) | Organic electroluminescent devices and manufacturing methods thereof | |
| CN107910351A (en) | The production method of TFT substrate | |
| CN107422543A (en) | A kind of display panel and preparation method thereof, display device | |
| CN100492617C (en) | Making method of the pixel structure and pixel structure | |
| TW201413825A (en) | Method of producing thin film transistor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |